JPH0115017B2 - - Google Patents
Info
- Publication number
- JPH0115017B2 JPH0115017B2 JP56038229A JP3822981A JPH0115017B2 JP H0115017 B2 JPH0115017 B2 JP H0115017B2 JP 56038229 A JP56038229 A JP 56038229A JP 3822981 A JP3822981 A JP 3822981A JP H0115017 B2 JPH0115017 B2 JP H0115017B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- capacitance
- sensor element
- oxide film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000009413 insulation Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- -1 Boron ions Chemical class 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/226—Construction of measuring vessels; Electrodes therefor
Description
【発明の詳細な説明】
本発明は、半導体基板上に半導体層から成る一
対の対向電極を備えて該対向電極間静電容量から
液状又はガス媒体の性状を検出する静電容量セン
サ素子に関する。静電容量センサ素子はそのほか
実開昭51−139657号公報に開示されるように静電
容量変化から液面を検出する装置に用いるなど従
来より知られている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a capacitive sensor element that includes a pair of opposing electrodes made of a semiconductor layer on a semiconductor substrate and detects the properties of a liquid or gaseous medium from the capacitance between the opposing electrodes. In addition, capacitance sensor elements have been known for use in devices that detect liquid levels from changes in capacitance, as disclosed in Japanese Utility Model Application Publication No. 51-139657.
この種のセンサ素子としては、第１図及び第２
図に示す構造のものを本出願人は既に提案してい
る（昭和56年３月９日付特許願56−33629（特開昭
57−148242号公報参照））。面方位（100）の単結
晶Ｐ型シリコン基板１にＮ層を形成し、異方性エ
ツチングよるＶ字形溝の堀込みでＮ層を櫛歯状に
分離して対向電極２，３を形成し、溝部表面には
酸化膜４を形成し、対向電極２，３の頂部の酸化
膜をエツチング除去してアルミニウム等のリード
電極５，６を形成する。この構造により、対向電
極２，３はシリコン基板１との間がPN接合によ
り夫々分離され、Ｖ字形溝により比較的小面積基
板上に静電容量を大きくした分離がなされ、検出
媒体中にセンサ素子を浸漬させることによりその
Ｖ字形溝を埋める検出媒体の性状が対向電極２，
３間の静電容量変化として検出される。例えば、
対向電極間静電容量から液状又はガス状媒体の誘
電率測定が可能となるし、ガスホール（ガソリン
とアルコールの混合物）のようにアルコール濃度
によつて誘電率εの変化する系ではアルコール濃
度測定を可能にする。 This type of sensor element is shown in Figures 1 and 2.
The applicant has already proposed the structure shown in the figure (Patent Application No. 56-33629 dated March 9, 1982
57-148242)). An N layer is formed on a single-crystal P-type silicon substrate 1 with a plane orientation of (100), and the N layer is separated into comb-like shapes by digging V-shaped grooves by anisotropic etching to form counter electrodes 2 and 3. An oxide film 4 is formed on the surface of the groove, and the oxide film on the top of the counter electrodes 2, 3 is removed by etching to form lead electrodes 5, 6 made of aluminum or the like. With this structure, the counter electrodes 2 and 3 are separated from the silicon substrate 1 by the PN junction, and the V-shaped groove provides separation with a large capacitance on the substrate with a relatively small area. The nature of the detection medium that fills the V-shaped groove by immersing the element is determined by the counter electrode 2,
It is detected as a change in capacitance between 3 and 3. for example,
It is possible to measure the dielectric constant of liquid or gaseous media from the capacitance between opposing electrodes, and in systems where the dielectric constant ε changes depending on the alcohol concentration, such as gas holes (mixtures of gasoline and alcohol), alcohol concentration can be measured. enable.
しかしながら、このような従来の静電容量セン
サ素子は、対向電極２，３とシリコン基板１を
夫々PN接合により分離するため、検出媒体によ
る基板１の汚れや湿気からPN接合の劣化を起
し、対向電極２，３間に基板１を通したリーク電
流iLが増大する問題があつた。このリーク電流iL
は高温になるほど増加し、125℃以上では急増し
て測定精度に大きく影響する。 However, in such a conventional capacitive sensor element, since the counter electrodes 2 and 3 and the silicon substrate 1 are separated by a PN junction, the PN junction may deteriorate due to dirt or moisture on the substrate 1 caused by the detection medium. There was a problem in that the leakage current i L passing through the substrate 1 between the opposing electrodes 2 and 3 increased. This leakage current i L
increases as the temperature increases, and increases rapidly above 125°C, greatly affecting measurement accuracy.
本発明は、半導体基板と対向電極を絶縁膜で分
離することにより、従来の問題点を解消した静電
容量センサ素子を提供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a capacitive sensor element that solves the conventional problems by separating a semiconductor substrate and a counter electrode with an insulating film.
第３図は本発明の一実施例を示す断面構造であ
る。多結晶シリコン基板７の表面に酸化膜８を形
成し、その上に一定間隔に面方位（100）のＰ型
単結晶シリコンの対向電極９，１０を配列する。
上述の酸化膜８はシリコン基板７と対向電極９，
１０間の絶縁を得るもので、例えば1μｍの膜厚
にして対向電極９，１０とシリコン基板７間にリ
ーク電流の発生が無くまた耐圧を持つ絶縁性能を
持つようにされ、またシリコン基板７の温度上昇
にも影響されない絶縁性能を持つように形成され
る。この対向電極９，１０の分離は異方性エツチ
ングによる空気層分離とし、エツチング面には酸
化膜１１を形成している。対向電極９，１０の頂
部表面には高濃度領域の低抵抗層１２を形成し、
この低抵抗層１２を接続部としてアルミニウム電
極１３，１４を対向電極９，１０に接続してい
る。従つて対向電極９，１０は絶縁膜８及び多結
晶シリコン基板７により絶縁分離され、従来の
PN接合分離に比して高い絶縁抵抗及び高耐圧に
なり、静電容量センサとしては浮遊容量分になる
分離容量が低減する。 FIG. 3 is a cross-sectional structure showing one embodiment of the present invention. An oxide film 8 is formed on the surface of a polycrystalline silicon substrate 7, and opposing electrodes 9 and 10 made of P-type single crystal silicon with a plane orientation of (100) are arranged at regular intervals thereon.
The above-mentioned oxide film 8 has a silicon substrate 7 and a counter electrode 9,
For example, the thickness of the film is 1 μm, so that there is no leakage current between the opposing electrodes 9, 10 and the silicon substrate 7, and the insulation performance has a withstand voltage. It is formed to have insulation performance that is unaffected by temperature rises. The opposing electrodes 9 and 10 are separated by air layer separation by anisotropic etching, and an oxide film 11 is formed on the etched surface. A low resistance layer 12 in a high concentration region is formed on the top surface of the counter electrodes 9 and 10,
Aluminum electrodes 13 and 14 are connected to counter electrodes 9 and 10 using this low resistance layer 12 as a connection portion. Therefore, the counter electrodes 9 and 10 are insulated and separated by the insulating film 8 and the polycrystalline silicon substrate 7, unlike the conventional
Compared to PN junction isolation, it has higher insulation resistance and higher breakdown voltage, and as a capacitive sensor, the isolation capacitance that becomes stray capacitance is reduced.
本実施例におけるセンサ素子は、第４図に示す
製造工程により実現される。面方位（100）のＮ
形単形晶シリコン基板１５の表面にボロンをイオ
ン注入して1018〜1019／cm3の高濃度領域のP+層１
６を厚さ１〜2μｍに形成する（第４図ａ）。P+層
１６表面に低濃度のエピタキシヤル成長層（P-）
１７を形成する（第４図ｂ）。このP-層１７は、
第３図における対向電極９，１０を成す領域のた
め、異方性エツチングによる空気層分離を完全に
すること及び所期の電極面積にする上で厚さ制御
を正確にする必要がある。また、P-層１７の濃
度は可能な限り低くし、異方性エツチングにおけ
る堀込み速度を高める。実用上はP-層濃度を
1016／cm3以似に抑えれば良く、この濃度での形成
は容易である。 The sensor element in this example is realized by the manufacturing process shown in FIG. N of plane direction (100)
Boron ions are implanted into the surface of the monomorphic silicon substrate 15 to form a P + layer 1 in a high concentration region of 10 18 to 10 19 /cm 3 .
6 to a thickness of 1 to 2 μm (Fig. 4a). Low concentration epitaxial growth layer (P - ) on the surface of P + layer 16
17 (Figure 4b). This P - layer 17 is
For the regions forming the counter electrodes 9 and 10 in FIG. 3, it is necessary to completely separate the air layer by anisotropic etching and to precisely control the thickness to obtain the desired electrode area. Furthermore, the concentration of the P - layer 17 is made as low as possible to increase the digging speed in anisotropic etching. In practice, the P -layer concentration is
It is sufficient to suppress the concentration to 10 16 /cm 3 or less, and formation at this concentration is easy.
次に、P-層１７表面に酸化膜１８を形成する
（第４図ｃ）。この酸化膜１８の厚さは絶縁性から
決められ、例えば1μｍにされる。酸化膜１８表
面には減圧気相成長法やスパツタリングにより多
結晶シリコン層１９を形成する（第４図ｄ）。こ
のシリコン層１９は最終的には基板７を成すもの
であるから、充分な強度を持つ厚さ、例えば
150μｍ〜300μｍにする。シリコン層１９の表面
に酸化膜２０を形成する（第４図ｅ）。この酸化
膜２０は次のＮ層１５のエツチング工程でシリコ
ン層１９が侵されるのを防ぐマスキング材を目的
とし、その厚さは約1μｍにされる。 Next, an oxide film 18 is formed on the surface of the P - layer 17 (FIG. 4c). The thickness of this oxide film 18 is determined based on its insulation properties, and is set to, for example, 1 μm. A polycrystalline silicon layer 19 is formed on the surface of the oxide film 18 by low pressure vapor deposition or sputtering (FIG. 4d). Since this silicon layer 19 will ultimately form the substrate 7, it should have a thickness that has sufficient strength, e.g.
The thickness should be 150 μm to 300 μm. An oxide film 20 is formed on the surface of the silicon layer 19 (FIG. 4e). This oxide film 20 is used as a masking material to prevent the silicon layer 19 from being attacked in the next etching process of the N layer 15, and its thickness is approximately 1 μm.
次に、出発母材であつたＮ層１５をアルカリエ
ツチングにより除去する（第４図ｆ）。このアル
カリエツチングは、後の異方性エツチングと同じ
エツチング条件にされ、エチレンジアミン：ビロ
カテコール：水を重量比で25：17：３にした温度
110℃の液中で行なわれ、エツチングはP+層１６
表面で自動的に終る。 Next, the N layer 15, which was the starting base material, is removed by alkali etching (FIG. 4f). This alkaline etching was carried out under the same etching conditions as the subsequent anisotropic etching, with a temperature of ethylenediamine:birocatechol:water in a weight ratio of 25:17:3.
Etching is carried out in a liquid at 110℃, and the etching is performed on the P + layer 16.
Closes automatically on the surface.
次に、沸酸＋硝酸系のエツチング液を使用し、
P+層１６をフオトエツチングで対向電極パター
ンに刻む（第４図ｇ）。電極パターンは夫々＜110
＞方向に延びるように設定するのが望ましい。こ
のフオトエツチングに使用されるフオトレジスト
２１をマスクとして上記アルカリエツチングに同
じ条件で異方性エツチングをP-層１７に施し、
対向電極９，１０の分離を行なう（第４図ｈ）。
このエツチング液は面方位（111）に対してはエ
ツチングが殆んど進まないことから、分離溝は
（111）面で四方を囲まれた正確なＶカツトとな
り、電極パターンが＜110＞方向の場合には
（111）面と（100）面のなす角度は54.7゜になる。 Next, use an etching solution containing fluoric acid and nitric acid.
The P + layer 16 is etched into a counter electrode pattern by photoetching (FIG. 4g). Each electrode pattern is <110
It is desirable to set it so that it extends in the > direction. Using the photoresist 21 used in this photoetching as a mask, the P - layer 17 is subjected to anisotropic etching under the same conditions as the alkali etching described above.
The opposing electrodes 9 and 10 are separated (FIG. 4h).
Since this etching solution hardly etches in the (111) plane, the separation groove becomes a precise V-cut surrounded on all sides by the (111) plane, and the electrode pattern is oriented in the <110> direction. In this case, the angle between the (111) and (100) planes is 54.7°.
次に、分離された対向電極１７（９），１７
（１０）の表面を保護するため、再度に酸化膜２
２を形成し、対向電極の頂面酸化膜の一部を除去
して電極接合面２３を形成する（第４図ｉ）。電
極接合面２３の形成と同様に基板１９側の酸化膜
２０を除去する。電極接合面２３に厚さ1μｍの
アルミニウム電極２４を形成して第３図に示す構
造になる（第４図ｊ）。 Next, the separated counter electrodes 17 (9), 17
In order to protect the surface of (10), an oxide film 2 is added again.
2 is formed, and a part of the top oxide film of the counter electrode is removed to form an electrode bonding surface 23 (FIG. 4i). Similarly to the formation of the electrode bonding surface 23, the oxide film 20 on the substrate 19 side is removed. An aluminum electrode 24 having a thickness of 1 μm is formed on the electrode bonding surface 23 to obtain the structure shown in FIG. 3 (FIG. 4 j).
なお、第４図に示す工程にあつて対向電極１７
（９），１７（１０）と多結晶シリコン１９との絶
縁に酸化膜（SiO2）１８を形成する場合を示す
が、異方性エツチングに耐える絶縁膜、例えば窒
化シリコン（SiN4）に代替可能である。 In addition, in the process shown in FIG. 4, the counter electrode 17
(9), 17 (10) and the case where an oxide film (SiO 2 ) 18 is formed to insulate the polycrystalline silicon 19 is shown, but an insulating film that can withstand anisotropic etching, such as silicon nitride (SiN 4 ), can be used instead. It is possible.
また、対向電極の分離溝堀込みは異方性エツチ
ングに代えて通常の沸酸＋硝酸系のエツチング液
によることもできる。この場合の構造は第５図に
示すように、分離溝が垂直面を持つことが第３図
と異なる部分であるが、対向電極９，１０と基板
７との分離を絶縁膜８により行い第３図の場合と
同様に完全な分離を得て従来の問題点を解消でき
る。 Furthermore, instead of anisotropic etching, the separation grooves for the counter electrode can be dug using a normal etching solution of fluoric acid and nitric acid. The structure in this case is different from that in FIG. 3 in that the separation groove has a vertical surface, as shown in FIG. As in the case of FIG. 3, complete separation can be obtained and the conventional problems can be solved.
また、対向電極はエピタキシヤル成長層に限ら
れるものでなく、第６図に示すように多結晶シリ
コンを使つた対向電極２５，２６にして同等の作
用効果を得ることができる。この場合、対向電極
２５，２６は基板２７上に酸化膜８を成長させた
後、多結晶シリコン層を形成してエツチング分離
することで実現される。本実施例においても対向
電極２５，２６と基板２７とは絶縁膜８による完
全な分離を得て従来の問題点を解消できる。な
お、基板２７は多結晶シリコンに限られるもので
なく、単結晶シリコンにすることもできる。 Furthermore, the counter electrodes are not limited to epitaxially grown layers, and as shown in FIG. 6, counter electrodes 25 and 26 made of polycrystalline silicon can be used to obtain the same effect. In this case, the opposing electrodes 25 and 26 are realized by growing an oxide film 8 on the substrate 27, then forming a polycrystalline silicon layer and separating it by etching. Also in this embodiment, the counter electrodes 25, 26 and the substrate 27 are completely separated by the insulating film 8, so that the conventional problems can be solved. Note that the substrate 27 is not limited to polycrystalline silicon, but may also be made of single-crystalline silicon.
以上のとおり、本発明よれば半導体基板と対向
電極を絶縁膜８で分離するため、対向電極間のリ
ーク電流が少なくしかも湿気や汚れに強い安定し
た絶縁分離構造にできる効果がある。また、高温
媒体中に置いて安定した静電容量検出が可能とな
る。 As described above, according to the present invention, since the semiconductor substrate and the counter electrode are separated by the insulating film 8, the leakage current between the counter electrodes is reduced, and a stable insulation separation structure that is resistant to moisture and dirt can be achieved. Furthermore, stable capacitance detection is possible when placed in a high-temperature medium.
第１図は従来の静電容量センサ素子の平面図、
第２図は第１図におけるＡ−A′線に沿つた断面
図、第３図は本発明の一実施例を示す要部断面
図、第４図は第３図に示す素子構成のための工程
図、第５図及び第６図は本発明の他の実施例を示
す要部断面図である。
７……多結晶シリコン基板、８……絶縁膜、
９，１０……対向電極、１１……絶縁膜、１２…
…低抵抗層、１３，１４……アルミニウム電極、
２５，２６……対向電極、２７……基板。
Figure 1 is a plan view of a conventional capacitive sensor element.
2 is a sectional view taken along line A-A' in FIG. 1, FIG. 3 is a sectional view of essential parts showing one embodiment of the present invention, and FIG. The process drawings and FIGS. 5 and 6 are sectional views of main parts showing other embodiments of the present invention. 7... Polycrystalline silicon substrate, 8... Insulating film,
9, 10... Counter electrode, 11... Insulating film, 12...
...Low resistance layer, 13,14...Aluminum electrode,
25, 26... Counter electrode, 27... Substrate.
Claims (1)
上に半導体層から成る一対の対向電極を空気層分
離により形成し、上記対向電極間の静電容量から
該対向電極間の媒体の性状を検出することを特徴
とする静電容量センサ素子。 ２ 特許請求の範囲第１項において、半導体基板
及び対向電極は少なくとも一方を多結晶シリコン
にしたことを特徴とする静電容量センサ素子。 ３ 特許請求の範囲第１項において、対向電極は
面方位（100）の単結晶シリコンから異方性エツ
チングにより分離形成したことを特徴とする静電
容量センサ素子。[Claims] 1. An insulating film is provided on the surface of a semiconductor substrate, a pair of opposing electrodes made of a semiconductor layer are formed on the insulating film by air layer separation, and the capacitance between the opposing electrodes is determined by the capacitance between the opposing electrodes. A capacitive sensor element characterized by detecting the properties of a medium between. 2. The capacitance sensor element according to claim 1, wherein at least one of the semiconductor substrate and the counter electrode is made of polycrystalline silicon. 3. The capacitance sensor element according to claim 1, wherein the counter electrode is formed separately from single crystal silicon with a plane orientation of (100) by anisotropic etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3822981A JPS57153254A (en) | 1981-03-17 | 1981-03-17 | Electrostatic capacity sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3822981A JPS57153254A (en) | 1981-03-17 | 1981-03-17 | Electrostatic capacity sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57153254A JPS57153254A (en) | 1982-09-21 |
| JPH0115017B2 true JPH0115017B2 (en) | 1989-03-15 |
Family
ID=12519471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3822981A Granted JPS57153254A (en) | 1981-03-17 | 1981-03-17 | Electrostatic capacity sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57153254A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3310643C2 (en) * | 1983-03-24 | 1986-04-10 | Karlheinz Dr. 7801 Schallstadt Ziegler | Pressure sensor |
| JP2002243689A (en) * | 2001-02-15 | 2002-08-28 | Denso Corp | Capacity-type humidity sensor and method for manufacturing the same |
| JP2002243690A (en) * | 2001-02-20 | 2002-08-28 | Denso Corp | Capacitance type humidity sensor and method for manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148242A (en) * | 1981-03-09 | 1982-09-13 | Nissan Motor Co Ltd | Electrostatic capacity sensor |
-
1981
- 1981-03-17 JP JP3822981A patent/JPS57153254A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148242A (en) * | 1981-03-09 | 1982-09-13 | Nissan Motor Co Ltd | Electrostatic capacity sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57153254A (en) | 1982-09-21 |
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