JPH01142080A - Formation of thin film - Google Patents
Formation of thin filmInfo
- Publication number
- JPH01142080A JPH01142080A JP62299922A JP29992287A JPH01142080A JP H01142080 A JPH01142080 A JP H01142080A JP 62299922 A JP62299922 A JP 62299922A JP 29992287 A JP29992287 A JP 29992287A JP H01142080 A JPH01142080 A JP H01142080A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- holder
- temperature
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 230000015572 biosynthetic process Effects 0.000 title description 8
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000000126 substance Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract 2
- 239000011521 glass Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 17
- 229910017682 MgTi Inorganic materials 0.000 claims 1
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract 1
- 229910012463 LiTaO3 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003080 TiO4 Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
- C12M23/00—Constructional details, e.g. recesses, hinges
- C12M23/02—Form or structure of the vessel
- C12M23/08—Flask, bottle or test tube
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
- C12M23/00—Constructional details, e.g. recesses, hinges
- C12M23/34—Internal compartments or partitions
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
- C12M23/00—Constructional details, e.g. recesses, hinges
- C12M23/38—Caps; Covers; Plugs; Pouring means
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
- C12M33/00—Means for introduction, transport, positioning, extraction, harvesting, peeling or sampling of biological material in or from the apparatus
- C12M33/02—Means for introduction, transport, positioning, extraction, harvesting, peeling or sampling of biological material in or from the apparatus by impregnation, e.g. using swabs or loops
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は電子部品構造における薄膜形成方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) This invention relates to a method of forming a thin film in an electronic component structure.
（従来の技術）
従来、電子部品製造方法に於て、基板上に薄膜を形成す
る方法として蒸着、スパッタ、ＣｖＤ等が採用されてい
た。これらの方法では、基板表面上に薄膜が形成される
際の粒子の運動エネルギーやプラズマ等により基板表面
上のみが高温になり、基板裏面即ち基板ホルダーと接触
する面が低温のままとなり基板内に急激な温度勾配を有
することになっていた。即ち、基板表面即ち薄膜を形成
する面に於ては、薄膜となる物質が表面に向かって飛来
し、表面に付着する事になる。この時飛来してきた物質
の運動エネルギーは、付着したときに大部分が熱となっ
て基板に供給されることになる。(Prior Art) Conventionally, in electronic component manufacturing methods, vapor deposition, sputtering, CvD, etc. have been employed as methods for forming thin films on substrates. In these methods, only the surface of the substrate becomes high temperature due to the kinetic energy of particles and plasma when a thin film is formed on the surface of the substrate, and the back surface of the substrate, that is, the surface that comes into contact with the substrate holder, remains at a low temperature. It was supposed to have a steep temperature gradient. That is, on the surface of the substrate, that is, the surface on which the thin film is to be formed, the substance that will form the thin film flies toward the surface and adheres to the surface. At this time, most of the kinetic energy of the flying substance becomes heat and is supplied to the substrate when it adheres to the substrate.
特にプラズマ等を用いる薄膜形成方法ではこのプラズマ
により更に多くの熱が基板表面上に与えらる事になる。In particular, in a thin film forming method using plasma or the like, even more heat is applied to the substrate surface by the plasma.
この時基板裏面即ちホルダーと接っしている面に於ては
、ホルダーと同一の温度であり従って、薄膜形成中に基
板内で表面から裏面に向かって急激な温度勾配が発生す
る事になる。従って熱的な歪みを基板内に発生し易く薄
膜形成中における基板の破損が、薄膜形成後に於ては基
板の歪みが解放される事により薄膜内への応力としての
歪み更には薄膜と基板との界面における付着強度の低下
を発生する等の問題点があった。At this time, the back surface of the substrate, that is, the surface in contact with the holder, is at the same temperature as the holder, and therefore, a rapid temperature gradient will occur within the substrate from the front surface to the back surface during thin film formation. . Therefore, thermal strain is likely to occur within the substrate, and damage to the substrate during thin film formation may occur.After the thin film is formed, the strain on the substrate is released, resulting in strain within the thin film as stress, and further damage to the thin film and substrate. There were problems such as a decrease in adhesion strength at the interface.
（発明が解決しようとする問題点）
以上述べたように、従来の電子部品構造におケル蒸着、
スパッタ、ＣＶＤ等による薄膜形成方法では、急激な温
度勾配を基板内に発生するという問題点があり、その為
に形成された薄膜の特性が劣化又は基板破損等の問題点
が有った。本発明の目的は以上の問題点を解決し高信頼
性、安定性にとむ薄膜を形成できる薄膜形成方法を提供
するものである。(Problems to be Solved by the Invention) As described above, Kel vapor deposition and
Thin film forming methods such as sputtering and CVD have a problem in that a rapid temperature gradient is generated within the substrate, resulting in problems such as deterioration of the properties of the formed thin film or damage to the substrate. An object of the present invention is to provide a thin film forming method capable of solving the above problems and forming a thin film with high reliability and stability.
［発明の構成］
（問題点を解決するための手段）
ることによって基板内での温度勾配を抑制するものであ
る。[Structure of the Invention] (Means for Solving the Problems) The temperature gradient within the substrate is thereby suppressed.
（作用）
基板及び基板を保持するホルダーと更にホルダーよりも
熱伝導率の悪い物質とによる、薄膜形成装置内での基板
保持方法を考察する。基板表面即ち薄膜を形成する面に
於ては、薄膜となる物質が表面に向かって飛来し表面に
付着する事になる。(Function) A method of holding a substrate in a thin film forming apparatus using a substrate, a holder for holding the substrate, and a substance having a lower thermal conductivity than the holder will be considered. On the surface of the substrate, that is, the surface on which the thin film is to be formed, the substance that will form the thin film flies toward the surface and adheres to the surface.
この時飛来してきた物質の運動エネルギーは付着したと
きに大部分が熱となって基板に供給されることになる。Most of the kinetic energy of the flying substance becomes heat when it adheres to the substrate and is supplied to the substrate.
特にプラグ４フ等を用いる薄膜形成方法ではこのプラズ
マにより更に多くの熱が基板表面上に与えらる事になる
。この時、基板裏面即ちホルダー依りも熱伝導率の悪い
物質と接している面に於て、初期にはホルダーと同一の
温度であり、基板表面が加熱されることによって基板内
に温度勾配が発生する事になる。この事は赤外線ランプ
により基板を加熱する方法を併用する薄膜形成装置内て
も同様である。In particular, in a thin film forming method using a plug or the like, even more heat is applied to the substrate surface by this plasma. At this time, the back surface of the substrate, that is, the surface that is in contact with a material with poor thermal conductivity, is initially at the same temperature as the holder, and as the surface of the substrate is heated, a temperature gradient occurs within the substrate. I will do it. This also applies to a thin film forming apparatus that also uses a method of heating the substrate with an infrared lamp.
基板表面に加えられた熱が基板裏面に伝わるまでの時間
は、基板自体の熱伝導度に依存しており熱伝導度の悪い
ものほど多く時間がかかる。この時、基板裏面に於ては
物質と接触している為にホルダーと接触している場合に
比べ熱の伝導率が悪く成り、基板裏面温度が後者に比べ
て高く成る。The time it takes for heat applied to the front surface of the substrate to be transmitted to the back surface of the substrate depends on the thermal conductivity of the substrate itself, and the worse the thermal conductivity of the substrate, the longer it takes. At this time, since the back surface of the substrate is in contact with a substance, its thermal conductivity is poorer than when it is in contact with the holder, and the temperature of the back surface of the substrate is higher than that in the latter case.
従って基板自体の温度勾配を抑制する事が出来る。Therefore, the temperature gradient of the substrate itself can be suppressed.
（実施例） 本発明による実施例を図を用いて詳細に説明する。(Example) Embodiments of the present invention will be described in detail with reference to the drawings.
第１図は一実施例の薄膜形成方法の構成図で菖る。１は
基板であり、２は熱伝導率の悪い物質、３は薄膜形成装
置内のホルダーである。この実施例では基板としてＳＡ
Ｗフィルター、光回路基板であるＬ Ｌ Ｎ ｂ Ｏａ
の基板で厚さ０．５ｍｍを用い、熱伝導率の悪い物質と
してＳｉＯ２の１１厚の薄板を用い、ホルダーとしてス
テンレスを材料にして作られている物を用いる。薄膜形
成方法としてスパッタリングを用いる。スパッタリング
直前における基板、ホルダーの温度は２５℃である。こ
の時のスパッタ条件はどの様なものでも良いが、例えば
６００Ｗ程度の入力で３０分程度スノく・ンタを行った
場合の基板と物質２の間に挿入した熱雷対の温度は２０
０℃であり物質２とホルダー３との間に挿入した熱電対
の温度は１００℃であった。FIG. 1 is a block diagram of a thin film forming method according to an embodiment. 1 is a substrate, 2 is a material with poor thermal conductivity, and 3 is a holder in a thin film forming apparatus. In this example, SA is used as the substrate.
W filter, optical circuit board L L N b Oa
A substrate with a thickness of 0.5 mm is used, a thin plate of SiO2 with a thickness of 11 mm is used as a material with poor thermal conductivity, and a holder made of stainless steel is used. Sputtering is used as a thin film forming method. The temperature of the substrate and holder immediately before sputtering was 25°C. Any sputtering conditions may be used at this time, but for example, when sputtering is performed for about 30 minutes with an input of about 600 W, the temperature of the thermal lightning pair inserted between the substrate and substance 2 is 20
The temperature was 0°C, and the temperature of the thermocouple inserted between substance 2 and holder 3 was 100°C.
之に対して物質２を介在させないで同じ時にスパッタを
行った場合には基板とホルダーとの間に挿入した熱電対
の温度は９０℃と成っていた。この時基板表面に於ての
温度は測定することが出来ないがスパッタターゲットと
ホルダーとの間隔を６０ＴＰＩＩ１１一定とし、同じ時
にスパッタしていることからほぼ同一と考えられ、本方
法で基板内の温度勾配を抑制することが出来る。従って
基板内の熱的な歪みを抑制し薄膜形成中における基板の
破損や、薄膜形成後に於ては薄膜内の歪みを減少させ更
には薄膜と基板との界面における付着強度の低下を防止
する事が出来る。On the other hand, when sputtering was performed at the same time without intervening substance 2, the temperature of the thermocouple inserted between the substrate and the holder was 90°C. At this time, the temperature on the substrate surface cannot be measured, but since the spacing between the sputter target and the holder is constant at 60TPII11 and sputtering occurs at the same time, it is considered that they are almost the same. Gradient can be suppressed. Therefore, thermal distortion within the substrate can be suppressed to prevent damage to the substrate during thin film formation, as well as distortion within the thin film after thin film formation, and furthermore, a decrease in adhesion strength at the interface between the thin film and the substrate can be prevented. I can do it.
本方法では基板加熱をヒータで行っていても良い。又Ｓ
ｉＯ□の板として基板と同じ大きさである必要は無く図
２に示すように一部分のみで接触させることに依り、通
常の物質に対して熱伝導率の悪い真空の層が基板とホル
ダーとの間に形成されるため−層の効果を得ることが出
来る。In this method, the substrate may be heated by a heater. Also S
It is not necessary for the iO□ plate to be the same size as the substrate, but by contacting only a portion of it as shown in Figure 2, a vacuum layer, which has poor thermal conductivity compared to ordinary materials, can be created between the substrate and the holder. Because it is formed between layers, it is possible to obtain the effect of layers.
第二の実施例
第３図は本発明による他の実施例を示す薄膜形成方法の
構成図である。９は基板であり、１０は熱電導率の悪い
物質、１１は薄膜形成装置内のホルダーである。この実
施例では基板としてマイクロ波回路基板である（ Ｚ
ｒ Ｓ ｎ ） Ｔ ｉＯ４の基板で厚２ｍｍを用い、
熱伝導率の悪い物質として５１０２の１ｍｍ厚の薄板を
用い、ホルダーとして銅を材料にして作られているもの
を用いている。Second Embodiment FIG. 3 is a block diagram of a thin film forming method showing another embodiment of the present invention. 9 is a substrate, 10 is a material with poor thermal conductivity, and 11 is a holder in the thin film forming apparatus. In this example, the substrate is a microwave circuit board (Z
r S n ) Using a TiO4 substrate with a thickness of 2 mm,
A 1 mm thick thin plate of 5102 is used as a material with poor thermal conductivity, and a holder made of copper is used.
薄膜形成方法として抵抗加熱又は電子ビーム蒸着を用い
る。蒸着直前における基板、ホルダーの温度は２５℃で
ある。この時の蒸着条件はどの様なものでも良いが、例
えばＣｒや金を蒸着した場合の基板と物質１０の間に挿
入した熱電対の温度は１３０℃であり物質１０とホルダ
ーとの間に挿入した熱電対の温度は７０°Ｃであった。Resistance heating or electron beam evaporation is used as a thin film forming method. The temperature of the substrate and holder immediately before vapor deposition is 25°C. Any vapor deposition conditions may be used at this time, but for example, when Cr or gold is vapor deposited, the temperature of the thermocouple inserted between the substrate and the substance 10 is 130°C, and the temperature is 130°C, and the temperature is 130°C. The temperature of the thermocouple was 70°C.
之に対して物質１０を介在させないで同じ時に蒸着した
場合には、基板とホルダーとの間に挿入した熱電対の温
度は６０℃と成っていた。この時基板表面に於ての温度
は測定することが出来ないが蒸着源と基板表面の間隔を
３０ｍｍ一定とし、同じ時に蒸着していることからほぼ
同一と考えらえ、本方法で基板内の温度勾配を抑制する
ことが出来る。On the other hand, when the substance 10 was deposited at the same time without intervening, the temperature of the thermocouple inserted between the substrate and the holder was 60°C. At this time, the temperature on the substrate surface cannot be measured, but since the distance between the evaporation source and the substrate surface is fixed at 30 mm and the evaporation occurs at the same time, it can be assumed that the temperature is almost the same. Temperature gradients can be suppressed.
［発明の効果］
以上述べたように本発明の依れば薄膜形成中の基板内に
おける温度勾配を抑制する事ができる。[Effects of the Invention] As described above, according to the present invention, the temperature gradient within the substrate during thin film formation can be suppressed.
従って基板内の熱的な歪みを抑制し薄膜形成中における
基板の破損や、薄膜形成後に於ては薄膜内の歪みを減少
させ更には薄膜と基板との界面における付着強度の低下
を防止する事が出来る。Therefore, thermal distortion within the substrate can be suppressed to prevent damage to the substrate during thin film formation, as well as distortion within the thin film after thin film formation, and furthermore, a decrease in adhesion strength at the interface between the thin film and the substrate can be prevented. I can do it.
第１図は本発明の第１の実施例を示す図、第２図は第１
の実施例の使用例を示す図、第３図は他の実施例を示す
図である。
１．４，６．９ ・・・ 基板FIG. 1 is a diagram showing a first embodiment of the present invention, and FIG. 2 is a diagram showing a first embodiment of the present invention.
FIG. 3 is a diagram showing an example of use of the embodiment, and FIG. 3 is a diagram showing another embodiment. 1.4, 6.9... Board
Claims (3)
保持するホルダーと基板との間にホルダーよりも熱伝導
率の低い物質を介して保持することを特徴とする薄膜形
成方法。(1) A method for forming a thin film on the surface of a substrate, characterized in that the substrate is held between a holder that holds the substrate and a substance having a lower thermal conductivity than the holder.
強誘電体結晶又はＡｌ＿２Ｏ＿３、ガラス、Ｂａ＿２Ｔ
ｉ＿３Ｏ＿２＿０、（ＺｒＳｎ）ＴｉＯ＿４、ＭｇＴｉ
Ｏ＿３−ＣａＴｉＯ＿３等の誘電体基板を用いることを
特徴とした特許請求の範囲第１項記載の薄膜形成方法。(2) Substrate: ferroelectric crystal such as LiNbO_3, LiTaO_3, Al_2O_3, glass, Ba_2T
i_3O_2_0, (ZrSn)TiO_4, MgTi
The thin film forming method according to claim 1, characterized in that a dielectric substrate such as O_3-CaTiO_3 is used.
ることを特徴とした特許請求の範囲第１項記載の薄膜形
成方法。(3) The thin film forming method according to claim 1, wherein the same material as the substrate is used as the material with low thermal conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62299922A JPH01142080A (en) | 1987-11-30 | 1987-11-30 | Formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62299922A JPH01142080A (en) | 1987-11-30 | 1987-11-30 | Formation of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01142080A true JPH01142080A (en) | 1989-06-02 |
Family
ID=17878547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62299922A Pending JPH01142080A (en) | 1987-11-30 | 1987-11-30 | Formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01142080A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001338878A (en) * | 2000-03-21 | 2001-12-07 | Sharp Corp | Susceptor and surface treatment method |
-
1987
- 1987-11-30 JP JP62299922A patent/JPH01142080A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001338878A (en) * | 2000-03-21 | 2001-12-07 | Sharp Corp | Susceptor and surface treatment method |
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