JPH01132118A - Preparation of semiconductor crystal and semiconductor crystal product obtained thereby - Google Patents

Abstract

PURPOSE:To prepare semiconductor crystals with excellent quality, e.g., a single crystal containing no grain boundaries and controlled grain boundary polycrystals formed independent of the type of base material by applying a semiconductor crystal forming treatment to a substrate in which a stacked surface having small nucleation density and a metal stacked surface having an area small enough to cause a crystal to grow from a single nucleus are adjacently disposed. CONSTITUTION:To cause a semiconductor crystal to grow from a single nucleus, a semiconductor crystal forming treatment is applied to a substrate having a free surface where a stacked surface (SNDS) having a nucleation density and a metal stacked surface (SNDL) having an area small enough to cause a crystal to grow from a single nucleus and having a nucleation density (NDL) larger than the nucleation density (NDS) of the stacked area (SNDS) are adjacently disposed. For example, a thin film 5 with a small nucleation density is formed on a substrate 4. Then, a metallic material with a larger nucleation density is stacked thereupon and patterned so that a sufficiently fine nucleation surface 6 is formed. Then a single nucleus of a thin film of semiconductor material is formed only on the nucleation surface 6 by selecting an appropriate stacking condition. The single nucleus is caused to grow up to an island-like semiconductor single crystal grain 7, and further the grain 7 is caused to grow so that a single crystal 7A covering the entire surface of the thin film 5 is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a semiconductor crystal and a semiconductor crystal article obtained by the method, and particularly to a method for controlling the difference in the nucleation density of the deposited material depending on the type of the deposited surface material. The present invention relates to a method for forming a semiconductor single crystal or a semiconductor polycrystal with controlled grain size using the method, and a crystal article obtained thereby.

The present invention relates to the formation of semiconductor crystals such as semiconductor single crystals and semiconductor polycrystals used in electronic devices such as semiconductor integrated circuits, optical integrated circuits, and magnetic circuits, optical devices, magnetic devices, piezoelectric devices, and surface acoustic devices. Applies to.

[Prior art and its problems] Conventionally, single crystal thin films used for semiconductor electronic devices, optical devices, etc. have been formed by epitaxial growth on single crystal substrates. For example, it is known that St, Ge, GaAs, etc. can be epitaxially grown on a St single crystal substrate (silicon wafer) from a liquid phase, a gas phase, or a solid phase.
Moreover, GaAs is formed on the GaAs single crystal substrate.

It is known that single crystals such as GaAuAs can be epitaxially grown. Using the semiconductor thin film thus formed, semiconductor elements, integrated circuits, light emitting elements such as semiconductor lasers and LEDs, etc. are manufactured.

In addition, recently there has been much research and development into ultrahigh-speed transistors using two-dimensional electron gas and superlattice devices using quantum wells. (molecular beam epitaxy) and MOCVD
(organometallic chemical vapor phase method) and other high-precision epitaxial technologies.

In such epitaxial growth on a single crystal substrate, it is necessary to match the lattice constant and thermal expansion coefficient between the single crystal material of the substrate and the epitaxial growth layer. for example,
A Si single-crystal thin film is epitaxially grown on sapphire, which is an insulating single-crystal substrate. However, problems such as crystal lattice defects at the interface due to lattice constant deviation and diffusion of aluminum, which is a component of sapphire, into the epitaxial layer pose problems when applied to electronic devices and circuits.

Thus, it can be seen that the conventional method of forming a single crystal thin film by epitaxial growth largely depends on the substrate material.

Mathews et al. investigate combinations of substrate materials and epitaxially grown layers (EPITAXIAL GR
OWTH, Academic Press, Ne
wYork, 1975 ed, by J.W.
Mathews).

Furthermore, the size of the substrate is currently about 6 inches for Si wafers, and the increase in the size of GaAs and sapphire substrates is even slower. In addition, single crystal substrates are expensive to manufacture, resulting in a high cost per chip.

As described above, in order to form a single-crystal layer from which a high-quality device can be manufactured by the conventional method, there is a problem in that the types of substrate materials are limited to an extremely narrow range.

On the other hand, research and development of three-dimensional integrated circuits, in which semiconductor elements are stacked in the normal direction of a substrate to achieve high integration and multi-functionality, has been actively conducted in recent years, and there has also been active research and development in three-dimensional integrated circuits, in which semiconductor elements are stacked in the normal direction of a substrate. Research and development of large-area semiconductor devices, such as solar cells arranged on top of the screen and switching transistors for liquid crystal pixels, is also becoming more popular year by year.

What these two methods have in common is that they require a technique for forming a semiconductor thin film on an amorphous insulator and forming electronic elements such as transistors thereon. Among these, a technique for forming a high quality single crystal semiconductor on an amorphous insulator is particularly desired.

Generally, when a thin film is deposited on an amorphous insulator substrate such as Sin, the crystal structure of the deposited film becomes amorphous or polycrystalline due to the lack of long-range order in the substrate material. Here, an amorphous film is a film in which short-range order at the level of the nearest neighbor atoms is preserved, but no longer-range order, and a polycrystalline film is a film that has a specific crystal orientation. It is a film made up of single crystal grains that are isolated and aggregated by grain noses.

For example, when forming Si on Sin by the CVD method, if the deposition temperature is about 600°C or less, it will become amorphous silicon, and if the temperature is higher than that, the grain size will be in the range of several hundred to several thousand. This results in distributed polycrystalline silicon. However, the grain size and distribution of polycrystalline silicon vary greatly depending on the formation method.

Furthermore, polycrystalline thin films with large grain sizes on the order of microns or millimeters can be obtained by melting and solidifying amorphous or polycrystalline films using energy beams such as lasers or rod-shaped heaters (SingleCrystal 5
ilicon on non-single-crys
talinsulators, Journal of
crystal Growthvol, 63. N
o, 3.0ctober, 1983 edited
by G, W, Cullen).

When a transistor is formed in the thin film of each crystal structure formed in this way and the electron mobility is measured from its characteristics,
Approximately 0.1 cm2/V-sec for amorphous silicon and 1-10 cm for polycrystalline silicon with a grain size of several hundred nanometers.
”/V-sec, large-grain polycrystalline silicon obtained by melting and solidification has a mobility comparable to that of single-crystal silicon.

This result shows that there is a large difference in electrical characteristics between an element formed in a single crystal region within a crystal grain and an element formed across a grain boundary. In other words, the deposited film on an amorphous surface obtained by the conventional method has an amorphous or polycrystalline structure with a grain size distribution, and the device fabricated thereon has a
However, its performance is significantly inferior to devices fabricated using single-crystal layers.

becomes. Therefore, its applications are limited to simple switching elements, solar cells, photoelectric conversion elements, etc.

In addition, the method of forming a polycrystalline thin film with a large grain size by melting and solidifying requires a large amount of time to increase the grain size because it scans the amorphous or single crystal thin film for each wafer with an energy beam. It has the problem that it has poor performance and is not suitable for large-area applications.

Furthermore, research on diamond thin film growth has been gaining momentum in recent years. Diamond thin films have a wide band gap of 5.5 eV as a semiconductor, and can be operated at higher temperatures (up to 500° C.) than conventional semiconductor materials such as St, Ge, and GaAs. In addition, the carrier mobility of both electrons and holes exceeds that of Si (electrons are at 1800 cm
”/V-sec, hole is 1600 cm+'/V-s
ee), thermal conductivity is also very high. For this reason, its application to semiconductor devices that consume a large amount of heat and consume a large amount of electricity is considered to be promising.

However, there have been reports of epitaxial growth of a diamond thin film on a diamond substrate by vapor phase growth (N, FuJimoto).

T, Imai and^, Doi Pro, of I
nt, Couf, IPAT), there are no reports of successful heteroepitaxial growth on substrates other than diamond substrates.

Generally, diamond nuclei are formed using microwave excitation, CHa hydrocarbon gas, and hot filament or electron beam irradiation, but the nucleation density is generally low and a continuous thin film is formed. It's hard to break out. Even if it becomes a continuous thin film, it has a polycrystalline structure with a large grain size distribution, making it difficult to apply to semiconductor devices.

Furthermore, as long as a diamond substrate is used, it will naturally be expensive and there will be problems with increasing the area, making it unsuitable for practical use.

As mentioned above, with conventional crystal growth methods and the crystals formed thereby, it is not easy to achieve three-dimensional integration or increase in area, making it difficult to achieve practical use in devices.

However, it has been difficult to easily and inexpensively form single crystals, polycrystals, and other crystals required for manufacturing devices with excellent characteristics.

[Object of the Invention] The main object of the present invention is to provide a method for forming a semiconductor crystal that solves the above-mentioned conventional problems, and a crystal component (
article).

Another object of the present invention is to
For example, a method for forming high-quality semiconductor crystals such as single crystals without grain boundaries and polycrystals with controlled grain boundaries, without being restricted by the material, structure, size, etc. of the substrate, and crystals having the crystals obtained therefrom. The goal is to provide goods.

Still another object of the present invention is to provide a method for efficiently forming the above semiconductor crystal through simple steps without using any special equipment.

Yet another object of the present invention is to form a crystal formation surface of a metal having a sufficiently higher nucleation density than the material forming the crystal formation surface, and to form a metal having a sufficiently large nucleation density to the extent that only a single nucleus grows. An object of the present invention is to provide a semiconductor crystal article having a nucleation surface (SNDL) having a minute area and having a semiconductor single crystal grown singly on the nucleation surface (SNDL).

Yet another object of the present invention is to provide a method for forming a semiconductor crystal by utilizing a difference in nucleation density of a crystal forming material depending on the type of material forming the crystal forming surface. Forming a nucleation surface (SNDL) with a metal having a sufficiently higher nucleation density than the material forming the crystal formation surface and having a sufficiently fine area so that only a single nucleus grows,
An object of the present invention is to provide a method for forming a semiconductor crystal, in which only a single nucleus is formed on the crystal formation surface (SNDL), and a single crystal is grown from the single nucleus to form a semiconductor crystal.

Yet another object of the present invention is to have a non-nucleation surface (SNDS) with a low nucleation density and an area sufficiently small for crystal growth than only a single nucleus;
) is greater than the nucleation density (NDS) of
A method for forming a semiconductor crystal, the method comprising growing the semiconductor single crystal by performing a crystal formation treatment on a substrate having a free surface adjacent to a metal nucleation surface (SNDL) having a metal nucleation surface (SNDL). The goal is to provide the following.

Yet another object of the present invention is to provide a desired position of the non-nucleation surface (SNDS) of a substrate having a low nucleation density, wherein crystal growth is achieved from only a single nucleus. The non-nucleation surface (SN
The metal (M, ) forming the nucleation surface (SNDL) has a nucleation density (NDL) larger than the nucleation density (NDS) of the non-nucleation surface (SNDS), unlike the material (M, ML) to form the nucleation surface (S
NDL) is formed, and then a single nucleus is formed on the nucleation surface (SNDL) by subjecting the substrate to a crystal formation treatment, and a semiconductor single crystal is grown from the single nucleus. An object of the present invention is to provide a method for forming a.

Still another object of the present invention is to have 2 fl type crystal formation surfaces with a sufficiently large nucleation density difference (ΔND), among which the crystal formation surface (SNDL) with a smaller nucleation density is formed of metal. A stable single nucleus is formed on the crystal formation surface (SNDL) by performing a crystal formation treatment on a substrate having a sufficient area for a semiconductor single crystal to grow from only a single nucleus,
An object of the present invention is to provide a method for forming a semiconductor crystal, which is characterized by growing a semiconductor single crystal from the single nucleus.

Yet another object of the present invention is to provide a non-nucleation surface (SNDS) with a low nucleation density and a surface area adjacent to the non-nucleation surface (SNDS) that is sufficiently smaller for crystal growth than a single nucleus alone. and a metal nucleation surface (SNDL) having a nucleation density (NDL) greater than the nucleation density (NDL) of the non-nucleation surface (S+<os); and a single crystal excessively covering the nucleation surface (SNDL).

[Means for solving the problems] The first gist of the present invention is that the deposition surface with a low nucleation density (SN
DS), which has a sufficiently smaller area for crystal growth than a single nucleus alone, and has a nucleation density (NDS) of the deposition surface (SNDS).
S) A semiconductor crystal forming process is performed on a substrate having a free surface adjacent to a metal deposition surface (SNDL) having a larger nucleation density (NDL) to form a semiconductor single crystal from the single nucleus. A method for forming a semiconductor crystal, characterized by growing a semiconductor crystal.

The second gist of the present invention is that there are two types of deposition surfaces with a sufficiently large difference in nucleation density (ΔND), and the deposition surface (SNDL) with a larger nucleation density is made of metal. , has a sufficiently fine area for a semiconductor single crystal to grow from only a single nucleus, performs semiconductor crystal formation treatment on the substrate to form a stable single nucleus on the deposition surface (SNDL), and forms a stable single nucleus on the deposition surface (SNDL). A method for forming a semiconductor crystal characterized by growing a single crystal from a single nucleus.

The third aspect of the present invention is the deposition surface with low nucleation density (SN
The material (M, ), the deposition surface (SNDS) has a nucleation density (NDL) greater than the nucleation density (NDL) of the deposition surface (SNDS) by adding a metal (M+, ) forming the deposition surface (SNDS, ). ), then a semiconductor crystal forming process is performed on the substrate to form a single nucleus on the deposition surface (SNDL), and a semiconductor single crystal is grown from the single nucleus. It's in the formation method.

The fourth aspect of the present invention is the deposition surface with low nucleation density (SN
DS), and a nucleation layer disposed adjacent to the deposition surface (SNDS), having an area sufficiently smaller than a single nucleus to allow crystal growth, and having a nucleation density (NDg) larger than the nucleation density (NDg) of the deposition surface (SNow). Metal deposition surface (SND) with density (NDL)
L); and a semiconductor single crystal grown from the single nucleus and extending beyond the deposition surface (SNDL) to sufficiently cover the deposition surface (SNDS). In the goods.

A fifth aspect of the present invention is that the crystal formation surface is formed of a metal whose nucleation density (ND) is sufficiently larger than that of the amorphous material forming the crystal formation surface, and is sufficient to allow only a single nucleus to grow. A semiconductor crystal article is provided with a nucleation surface (SNDL) having a minute area, and has a semiconductor single crystal grown singly on the nucleation surface (SNDL).

A sixth aspect of the present invention is a method for forming a semiconductor crystal by utilizing the difference in nucleation density of a crystal forming material depending on the type of material forming the crystal forming surface, the method comprising: forming a semiconductor crystal on the crystal forming surface; A nucleation surface (SNDL) is formed with a metal that has a sufficiently higher nucleation density than the material forming the surface and has an area fine enough for only a single nucleus to grow.
The method of forming a semiconductor crystal is characterized in that only a single nucleus is formed in a LIL (LIL), and a semiconductor single crystal is grown from the single nucleus to form a semiconductor crystal.

A seventh aspect of the present invention is a method for forming a semiconductor single crystal by utilizing the difference in nucleation density of a crystal forming material depending on the type of material forming a crystal forming surface. Prepare a crystal formation surface using a metal that has a sufficiently higher nucleation density than the material forming the crystal formation surface, has a sufficiently small area for only a single nucleus to grow, and is of the required size of the semiconductor crystal. A nucleation surface (SNDL) is provided on the crystal formation surface at a distance equal to or greater than that of the crystal formation surface,
Next, forming only a single nucleus on the nucleation surface (SNDL) and growing a semiconductor single crystal from the single nucleus to selectively form a semiconductor crystal layer. It's in the method.

An eighth aspect of the present invention is that the non-nucleation surface (Ssns) is formed of an amorphous material, and the non-nucleation surface (Ssns) is formed of a metal different from the amorphous material, and the non-nucleation surface (Ssns) is A substrate for forming a semiconductor crystal having a nucleation surface (s, 4°L) with a higher nucleation density (ND) than the nucleation surface (SNDS), and a substrate for forming a semiconductor crystal having a nucleation surface (SNDL) on the nucleation surface
DL) and a semiconductor crystal formed in one-to-one correspondence.

The ninth aspect of the present invention is a non-nucleation surface with a low nucleation density (
SNDS) and exposed from the non-nucleation surface (SNDS),
It has a sufficiently smaller area for crystal growth than a single nucleus alone,
Nucleation density (NDS) of the non-nucleation surface (SNDS)'
A semiconductor crystal forming process is performed on a substrate having a free surface composed of a metal nucleation surface (SNDL) having a larger nucleation density (NDL) to grow a semiconductor single crystal from the single nucleus. The main feature lies in the method for forming semiconductor crystals.

The gist of the first O of the present invention is that the nucleation density difference (ΔND) has two types of crystal formation planes that are sufficiently large, and the nucleation plane (Ss.L) made of the metal with the larger nucleation density is , the substrate is exposed from the non-nucleation surface (SNDS) where the nucleation density is smaller and has a sufficiently fine area for the growth of a semiconductor single crystal from a single nucleus. , a method for forming a semiconductor crystal, characterized in that a stable single nucleus is formed on the nucleation surface (SNDL) and a single crystal is grown from the single nucleus.

An eleventh aspect of the present invention is to form a nucleation surface (SNDL) at a desired position on the surface of a substrate having a surface with a high nucleation density, which is sufficiently small to allow crystal growth from a single nucleus.
Unlike the metal (ML) which is exposed as a nucleation surface (SNDL) and forms the nucleation surface (SNDL),
The nucleation density (NDL) is smaller than the nucleation density (NDL) of L).
A material (M5) forming a non-nucleation surface (SNDS) having a non-nucleation surface (DS) is added to form the non-nucleation surface (SNDS) to create a substrate, and then the substrate is subjected to a semiconductor crystal formation treatment to form a single crystal. A method for forming a semiconductor crystal, characterized in that a single nucleus is formed on the nucleation surface (SNDL), and a semiconductor single crystal is grown from the single nucleus.

The twelfth aspect of the present invention is a method for forming a semiconductor crystal by utilizing the difference in nucleation density of crystal forming materials depending on the type of material forming the crystal forming surface, the method comprising: The surface of the support has a surface made of a metal (ML) having a sufficiently large nucleation density, and the surface of the support has a sufficiently fine area so that only a single nucleus, which becomes the nucleation surface (SNDL), grows. The metal (
A thin film of a material (M5) having a lower nucleation density than that of the nucleation surface (SNDL) is provided on the nucleation surface (SNDL).
), and a semiconductor crystal is formed by growing a semiconductor single crystal from the single nucleus.

The thirteenth aspect of the present invention is a method for forming a semiconductor crystal by utilizing the difference in the nucleation density of the crystal forming material depending on the type of material forming the crystal forming surface. providing a support having a formed surface and selectively disposing a thin film of a material having a lower nucleation density than the amorphous material on the surface to form an area fine enough to allow only a single nucleus to grow; The semiconductor which has and is required -
forming an exposed portion of the surface that will become a nucleation surface (SNDL) at a distance equal to or greater than the size of the crystal;
Next, a method for forming a semiconductor crystal is provided, characterized in that only a single nucleus is formed on the nucleation surface (SNDL), and a semiconductor single crystal is grown from the single nucleus to form a semiconductor crystal.

[Description of Embodiments] In order to better understand the present invention, first, a general thin film formation process of metals and semiconductors will be explained.

When the deposition surface is a different type of material from the incoming atoms, particularly an amorphous material, the incoming atoms freely diffuse or reevaporate (desorb) on the substrate surface. Then, as a result of collisions between atoms, a nucleus is formed, and the size of the nucleus (critical-like) at which its free energy G becomes maximum is re (=-20°/g
When the value exceeds v), G decreases and the nucleus continues to grow stably in a three-dimensional manner, forming an island shape. In the detailed explanation of the present invention that follows, a nucleus with a size exceeding re is called an r stable nucleus.
If the word ``mukuro'' is written without any equivalence, it shall refer to this ``stable core.''

Furthermore, among the "stable nuclei", those with a small radius of curvature r are called "initial-like". The free energy G generated by forming a nucleus is: G=4πf(θ) ×(σOt” + (gv ”r”)/3)f(θ
)=(2-3cosθ+eO82θ)/4 However, r:
Radius of curvature θ of the nucleus: Contact angle gv of the nucleus: Free energy per unit volume ao: Expressed as the surface energy between the nucleus and vacuum. Figure 1 shows how G changes.

In the figure, the radius of curvature of the stable nucleus when G is at its maximum value is rc.

In this way, the nuclei grow and become island-like, and as they grow further, the islands come into contact with each other, and in some cases coalescence occurs, forming a network structure and finally forming a continuous film that completely covers the substrate surface. . Through this process, a thin film is deposited on the substrate.

In the above-mentioned deposition process, the density of nuclei formed per unit area of the substrate surface, the size of the nuclei, and the nucleation rate are determined by the state of the deposition system, and especially the interaction between the flying atoms and the substrate surface material. Interaction is an important factor. Also, due to the anisotropy of the interfacial energy at the interface between the deposited material and the substrate surface with respect to the crystal plane, a certain crystal orientation grows parallel to the substrate, but if the substrate surface is amorphous, the substrate The crystal orientation within a plane is not constant. For this reason, grain boundaries are formed due to collisions between nuclei or islands, and especially when islands of a certain size or larger collide with each other, when coalescence occurs, grain boundaries are formed as they are. Since the formed grain boundaries are difficult to move in the solid phase, the grain size is determined at that point.

Next, a selective deposition method for selectively forming a deposited film on a deposition surface will be described. The selective deposition method takes advantage of the differences between materials in factors that affect nucleation during the thin film formation process, such as surface energy, adhesion coefficient, desorption coefficient, and surface diffusion rate.
This is a method of selectively forming a thin film on a substrate.

FIGS. 2(A) and 2(B) are illustrations of the selective deposition method. First, as shown in FIG. 2A, a thin film 2 made of a material having the above-mentioned factors different from that of the substrate 1 is formed on a substrate i at a desired portion. When a thin film made of a suitable material is deposited under suitable deposition conditions, a phenomenon can be caused in which the thin film 3 grows only on the thin film 2 and does not grow on the substrate 1. By utilizing this phenomenon, it is possible to grow the thin film 3 formed in a self-aligned manner, and it becomes possible to use a conventional resist or to omit the conventional resist.

Materials that can be deposited by such a selective formation method include, for example, Sin for the substrate 1, St, GaAs, and silicon nitride for the thin film 2, and St for the thin film 3 to be deposited.

Examples include W, GaAs, and InP.

FIG. 3 is a graph showing the change over time in the nucleation density of the Sin deposition surface and the silicon nitride deposition surface.

As the graph shows, shortly after starting the deposition, Si
The nucleation density above n is saturated below 103/cm', and its value hardly changes even after 20 minutes.

In contrast, on silicon nitride (Si3NJ), approximately 4
It is once saturated at X10' 1 crd, and does not change for 10 minutes after that, but increases rapidly after that. In this measurement example, 5iCj24 gas was diluted with H7 and the pressure was 1.
The case is shown in which deposition was performed by the CVD method under conditions of 75 Torr and a temperature of 100°C. In addition, 5it (4,5iH
2CJZa.

Using 5iHCIls, SiF4, etc. as a reaction gas,
A similar effect can be obtained by adjusting pressure, temperature, etc. Vacuum deposition is also possible.

In this case, nucleation on SiO2 is hardly a problem, but by adding MCI gas to the reaction gas, SiO2
Nucleation on O2 is further suppressed, and S on S i O2
The accumulation of t can be completely eliminated.

This phenomenon is largely due to differences in the adsorption coefficient, desorption coefficient, surface diffusion coefficient, etc. for St on the material surfaces of 5iC)2 and silicon nitride, but Si atoms themselves react with Si, resulting in a high vapor pressure. The fact that 5i02 itself is etched by the generation of silicon monoxide, whereas such an etching phenomenon does not occur on silicon nitride is also thought to be a cause of selective deposition (T, Yonehara, et al. S, Yoshi
OK.

S, Miyazawa Journal of
Applied Physics 53°6
839, 1982).

By selecting Sin and silicon nitride as the materials for the deposition surface and selecting silicon as the deposition material, a sufficiently large difference in nucleation density can be obtained as shown in the graph. In addition, here, 5 is used as the material for the non-nucleation surface.
i02 is desirable, but not limited to this, SiOx (0<
Even if X<2), it is possible to obtain a sufficiently practical nucleation density difference.

Of course, it is not limited to these materials, and other methods for obtaining the difference in nucleation density (ΔND) include Si
A region having an excessive amount of 81, Cu, etc. may be formed by locally implanting ions of A1, Cu, etc. into the n-plane.

The present invention utilizes a selective deposition method based on such a difference in nucleation density (ΔND), and uses a single nucleation surface made of a different material with a sufficiently higher nucleation density than the material on the non-nucleation surface. By forming the semiconductor single crystal sufficiently finely so that only the nucleus thereof grows, it is possible to selectively grow a semiconductor single crystal only in the area where the fine foreign material exists.

The selective growth of a semiconductor single crystal is also considered to be influenced by the electronic state of the non-nucleation surface, especially the state of dangling bonds. Therefore, the material with a low nucleation density (for example, SiO□) does not need to be a bulk material, and may be formed only on the surface of an arbitrary material or substrate to form the non-nucleation surface.

Hereinafter, the present invention will be explained in detail based on the drawings.

4(A) to 4(D) are forming surfaces showing the first embodiment of the method for forming a semiconductor crystal according to the present invention, and FIGS. 5(A) and 5(B) are ) and (D) are perspective views of the base body.

First, as shown in FIGS. 4(A) and 5(A), a thin film 5 [deposition surface (SNDS)] with a low nucleation density that enables selective deposition is formed on the substrate 4, and By depositing a thin layer of a metallic material different from the material that forms the thin film 5 with a high nucleation density on top and patterning it by lithography or the like, the nucleation surface (referred to as SNDL or rseedJ) 6 made of the different material is sufficiently formed. Form finely. However, the size, crystal structure, and composition of the support 4 may be arbitrary, and the support 4 may be a base on which functional elements are formed using ordinary semiconductor technology. In addition, the nucleation surface (SNDL) 6 made of different materials refers to the thin film 5 as described above.
It also includes an altered region having an excess of metal molecules, which is formed by implanting metal ions into the region.

A single nucleus of thin film semiconductor material is then formed only at the nucleation surface (SNDL) 6 by selecting appropriate deposition conditions. That is, the nucleation surface (SNDL) 6 needs to be formed sufficiently finely so that only a single nucleus is formed. The size of the nucleation surface (SNDL) 6 varies depending on the type of metallic material, but is preferably several μm (16 μm).
The thickness is more preferably 2 μm (4 μm) or less, and most preferably 1 μm (1 μrr?) or less. Further, the nucleus grows while maintaining the single crystal structure, and becomes an island-shaped semiconductor single crystal grain 7 as shown in FIG. 4(B). In order to form the island-shaped semiconductor single crystal grains 7, it is desirable to determine conditions such that no nucleation occurs on the thin film 5, as described above. The island-shaped semiconductor single crystal grains 7 further grow around the nucleation surface (SNDL) 6 while maintaining the single crystal structure (lateral overgrowth), and can cover the entire thin film 5 as shown in FIG. can(
Single crystal 7A).

Subsequently, the semiconductor single crystal 7A is planarized by etching or polishing as necessary, and the semiconductor single crystal 7A is flattened as shown in FIGS. 4(D) and 5(B).
), a single-crystal layer 8 is formed on the thin film, allowing the formation of desired elements.

Since the thin film 5 forming the non-nucleation surface (SNDS) is thus formed on the support 4, any material can be used for the support 4. Furthermore, in such a case, even if functional elements and the like are formed on the support 4 using normal semiconductor technology, it is easy to form a single crystal layer 8 thereon.
can be formed.

In the above embodiment, the non-nucleation surface (SMDll) was formed of the thin film 5, but of course, as shown in FIG. Using the body as it is, the nucleation surface (SNflL)
A single crystal layer may be formed in the same manner by providing a single crystal layer at any desired position.

FIGS. 6(A) to 6(D) show steps for forming a semiconductor single crystal showing a second embodiment of the present invention. As shown in the figure,
On the support 9 made of a material with a small nucleation density (ND) that enables selective nucleation, a nucleation surface (SNDL) 6 made of a metal with a large nucleation density (ND) can be formed in a sufficiently small size. can.

FIGS. 7(A) to 7(D) are forming process diagrams showing a third embodiment of the method for forming a semiconductor crystal according to the present invention;
Figures (A) and (B) are perspective views of the base body in Figures 7 (A) and (B).

As shown in FIG. 7(A) and FIG. 8(A), a metal of a different type from the support 11 is placed on the amorphous insulating support 11 at a distance of aft to enable selective nucleation. Nucleation surface in material (SNDL) 12-1. Arrange 12-2 sufficiently small. This distance mx is set, for example, to be equal to or larger than the size of a single crystal region required to form a semiconductor element or element group.

Next, by selecting appropriate crystal formation conditions, the nucleation surface (SNDL) L ) 12 1. The only nucleus of semiconductor crystal material is formed only in 12-2. That is, nucleation surface (SNDL) 12-1. 12-2 needs to be formed in a sufficiently fine size (area) to form only a single nucleus. Nucleation surface (SNDL) 12
1. The size of 12-2 varies depending on the type of metallic material, but it is sufficient that it is several microns or less.Furthermore, the nucleus grows while maintaining a single crystal structure, forming an island shape as shown in Figure 7 (B). becomes semiconductor single crystal grain 13-1.13-2. In order to form island-shaped semiconductor single crystal grains 13-1, 13-2, as already mentioned, the nucleation surface (
It is desirable to determine conditions such that no nucleation occurs on surfaces other than SNDL).

The crystal orientation of the island-shaped semiconductor single crystal grains 13-1, 13-2 in the normal direction to the base body 11 is fixed so as to minimize the interfacial energy of the material of the support body 11 and the material forming the nucleus. This is because the surface or interfacial energy has anisotropy depending on the crystal plane. however,
As already mentioned, the crystal orientation within the plane of the support in non-grade supports is not determined.

The island-shaped semiconductor single crystal grains 13-1 further grow to become single crystals 13A-1 and 13A-2, and as shown in FIG. 7(C), the adjacent semiconductor single crystals 13A-1 and 13A-2 Although they contact each other, since the crystal orientation within the plane of the support is not constant, a grain boundary 14 is formed at an intermediate position between the nucleation planes (SNDL) 12-1 and 12-2.

Subsequently, the semiconductor single crystals 13A-1 and 13A-2 grow three-dimensionally, but crystal planes with a slow growth rate appear as facets. For this purpose, the surfaces of the semiconductor single crystals 13A-1 and 13A-2 are flattened by etching or polishing, and the grain boundary portions 14 are removed, as shown in FIG. 7(D).
Then, as shown in FIG. 8(B), semiconductor single crystal thin films 15-1 and 15-2 containing no grain boundaries are formed in a lattice shape.

The size of this semiconductor single crystal film 15-1, 15-2 is, as described above, the interval 1
determined by That is, the nucleation surface (SNDL
) By appropriately determining the 12 formation patterns,
The positions of grain boundaries can be controlled, and semiconductor single crystals of desired size and arrangement can be formed.

FIGS. 9(A) to 9(D) are crystal ship formation process diagrams showing a fourth embodiment of the present invention. As shown in the figure, a thin film-like nucleation surface (S NDS) made of a material with a low nucleation density (ND) that enables selective nucleation is placed on the desired support 4 as in the first embodiment. 5, and a nucleation surface (SNDL) 12 made of metal can be formed thereon at a spacing λ.

10(A) to 10(D) are formation process diagrams showing an embodiment of the method for forming a semiconductor single crystal according to the present invention, and FIG.
Figures (A) and (B) are perspective views corresponding to Figures 10 (A) and (CD).

First, as shown in FIGS. 10(A) and 11(A), a metal thin film 6 with a high nucleation density that enables selective nucleation is formed on the support 10, and nucleation is formed on the thin metal film 6. The nucleation surface (SMD
ll) The thin film 5 forming 5A is placed on the nucleation surface (SNDL) 6
It is formed so that A is provided sufficiently finely. However, the size, crystal structure, and composition of the support body 4 may be arbitrary, and the support body 4 may be a support body on which functional elements are formed using ordinary semiconductor technology. Also, the nucleation surface (SNDL)
6A, the thin film 6 below the thin film 5 is made of polycrystalline silicon or S
AIL ions and C are formed on the exposed part of the thin film 6.
It may be formed as an altered region having an excess of metal molecules formed by implanting metal ions such as U ions.

A single nucleus of thin film semiconductor material is then formed only on the nucleation surface (SNDL) 6A by selecting appropriate deposition conditions. That is, the nucleation surface (SNDL) 6 is
It is necessary to form it sufficiently finely so that only a single nucleus is formed. The size of the nucleation surface (SNDL) 6A varies depending on the type of metallic material, but may be several microns or less.

Furthermore, the nucleus grows while maintaining a single crystal structure, as shown in Figure 4 (B
), island-shaped semiconductor single crystal grains 7 are formed. In order to form the island-shaped semiconductor single crystal grains 7, as already mentioned, it is desirable to determine the conditions so that no nucleation occurs on the thin film 5A.

The island-shaped semiconductor single crystal grains 7 further grow around the nucleation surface (SNDL) 6A while maintaining the single crystal structure, and cover the entire thin film 5 as shown in FIG. 10(C). (semiconductor single crystal 7A).

Subsequently, the semiconductor single crystal layer A is planarized by etching or polishing as necessary to form a single crystal layer 8 that can form a desired element, as shown in FIGS. 10(D) and 11(CB). is formed on the thin film.

Since the metal thin film 6 forming the non-nucleation surface (SNDS) 6A is formed on the support 4 in this way, the support 4
can be made of any material. Furthermore, in such a case, even if functional elements and the like are formed on the support 4 using normal semiconductor technology, the single crystal layer 8 can be easily formed thereon.

In addition, in the above embodiment example, the non-nucleation surface (S 5os) 6
A was formed with the thin film 5, but of course, as shown in FIG. 6, the nucleation surface (S
A single-crystal layer may be formed in the same manner by providing NDL) at any desired position.

FIGS. 12(A) to 12(D) are process diagrams for forming a semiconductor single crystal showing a sixth embodiment of the present invention. As shown in the figure,
A non-nucleation surface (S, 4°5) 5A made of a material with a small nucleation density (ND) is formed on a support 9 made of a metal material with a large nucleation density (ND) that enables selective nucleation. A substrate for crystal formation is prepared by forming a thin film 5 such that the exposed portion of the support 9 which becomes the nucleation surface (SNDL) 9A is sufficiently small, and this substrate is used to form the first embodiment example. Semiconductor single crystal layer 8 can be formed in the same manner as described above.

13(A) to 13(D) are forming process diagrams showing a seventh embodiment of the method for forming a semiconductor crystal according to the present invention, and FIG.
Figures (A) and (B) are perspective views corresponding to Figures 13 (A) and (D).

As shown in FIGS. 13 and 14 (A), an amorphous metal such as Al1%Cu or AIL-Cu alloy having a relatively high formation density (ND) is deposited on a suitable support 10 such as a glass plate. A thin film 12 is provided, and the thin film 11 is selected at a desired position on the metal thin film 12 with a different material having a lower nucleation density than the metal forming the thin film 12, which enables the selective nucleation. A nucleation surface (SNDL) 12A-1 with a sufficiently small area that only a single nucleus is formed.
, 12A-2 are arranged. This distance @X is set, for example, to be equal to or larger than the size of a single crystal region required to form a semiconductor element or element group.

Next, by selecting appropriate crystal formation conditions, only the nuclei of the semiconductor single crystal forming material are formed only on the nucleation surfaces (also SND) 12A-1 and 12A-2. That is,
As described above, the nucleation surfaces 12A-1 and 12A-2 need to be formed in a sufficiently fine size (area) to form only a single nucleus. Nucleation surface (SNDL) 1
2A-1.

The size of 12A-2 varies depending on the type of material, but
It only needs to be several microns or less. Further, the formed nuclei grow while maintaining the single crystal structure, and become island-shaped semiconductor single crystal grains 13-1 and 13-2 as shown in FIG. 7(B). In order to form island-shaped semiconductor single crystal grains 13-1 and 13-2, as mentioned above, the nucleation plane (SNDL)
) Surfaces other than 12-A and 12A-2 [non-nucleation surface (SN
DS)] It is desirable to determine conditions such that substantially no nucleation occurs in 11A.

The crystal orientation in the normal direction of the thin film 12 of the island-shaped semiconductor single crystal grains 13-1, 13-2 is thin ll! It is fixed to minimize the interfacial energy of the 12 metals and the material forming the nucleus. This is because the surface or interfacial energy has anisotropy depending on the crystal plane. However, as already mentioned, the intrasurface crystal orientation at an amorphous surface is not determined.

The island-shaped semiconductor single crystal grains 13-1 and 13- further grow to become semiconductors 13A-1 and 13A-2, as shown in FIG.
As shown in C), adjacent semiconductor single crystals 13A-1, 13
A-2 are in contact with each other, but since the crystal orientation in the plane of the support is different for each single crystal, the nucleation plane (SNDL) 12-
A grain boundary 14 is formed at an intermediate position between 1 and 12-2.

Subsequently, the semiconductor single crystals 13A-1 and 13A-2 grow three-dimensionally, but crystal planes with a slow growth rate appear as facets. For this purpose, the surfaces of the semiconductor single crystals 13A-1 and 13A- are flattened by etching or polishing, and the grain boundary portions 14 are removed, as shown in FIG. 13(D).
and semiconductor single crystal thin films 15-1, 15-2, which do not contain grain boundaries, as shown in FIG. 14(B). As mentioned above, the size of ... is the nucleation surface (SNDL) 12A
-1, 12A-2 is determined by the interval 1.

That is, the nucleation surface (SNDL) 12A-1, 12
By appropriately determining the formation pattern of A-2, the positions of grain boundaries can be controlled, and single crystals of desired size and arrangement can be formed.

(Margin below) [Example] .

Next, a case in which the present invention is applied to manufacturing a photovoltaic element will be specifically explained.

(First Example) First, as shown in FIGS. 15(A) and 15(B), a metal such as AL%Cu is sputter-deposited on a desired substrate 1501 such as a glass substrate, and then patterned to form an n-type semiconductor. electrode (first electrode) 1502a and an electrode for p-type semiconductor (second electrode) 1502a
(electrode) 1502b is formed into a comb shape. Figure 15 (A)
is a side sectional view, and FIG. 15(B) is a perspective view. At this time, the substrate 4 is an insulating material such as ceramic glass, and it is better if it is heat resistant.The electrodes 1502a and 1502b may be the same metal or different metals, and Al1. In addition to Cu, M
o or W can also be used.

Further, the distance between the electrodes 1502a and 1502b is the center-to-center distance, and is, for example, 40 μm.
2b has a width of, for example, 20 μm and a thickness of 0.0 μm.
It is set to 6 μm.

Next, as shown in FIG. 16, as an insulating film 1503,
For example, a 5i02 film is always deposited on 500 layers by CVD, and a contact hole is formed only on the n-type electrode! Open 504. The contact hole 1504 is RI E (Re
For example, a 2 μm square hole is opened using an active ion etching (active ion etching) device.

Next, as shown in FIG. 17, an n0 type St single crystal 1505a, which is a first semiconductor crystal, is grown on the electrode 1502a by the semiconductor crystal forming method of the present invention. At this time, the electrode 1502a is AA.

Formed with a material with high nucleation density such as Cu, Mo or W,
The insulating film 1503 is formed of a material with low nucleation density. Here, the formation of an n-type single crystal is performed using S i H as a source gas.
2Cf12: HCIt: H2=1.2:1.4:
This can be carried out using a mixed gas having a flow rate ratio (fL/m1n) of 100 and using PH3 as a dopant gas.

At that time, the crystal formation temperature was 900℃ and the pressure was 150 Torr.
An example is r.

When the growth nucleus grows to a certain extent, the growth of the crystal formation process is stopped (this crystal that has grown to a certain extent is called an island-shaped single crystal), and each surface of this island-shaped Si single crystal 1505a is thermally oxidized to A SiO2 film 1506 was formed. The size of the n-type wheel crystal St can be arbitrarily determined as desired, but is preferably 5 to 6 μm.

Next, as shown in FIG. 18, a contact hole of, for example, 2 μm is formed in the insulating film 1503 on the electrode 1502b, as in the case of the electrode 1502a. Then, a p-type Si single crystal 1505b, which is a second semiconductor crystal, is formed under the same conditions as those used to form the n1-type wheel crystal 1505a.

However, the dopant gas is 82 t instead of PH3.
Use ie. At this time, the n0 type island-like Si single crystal 15
SiO□1i150 with low nucleation density is on the surface of 05a.
6, no n-type Si single crystal is formed on the SiO2 film 1506.

Next, as shown in FIG. 19, the Si and oxide films 1506 on the surface of the n9 type island-shaped Si single crystal 1505a are removed by etching with an IF solution, and the island-shaped Si single crystal 1505a is etched again.
Expose the 05a side. Then, an i-type semiconductor Si single crystal 1507 is formed using the n0 type Si single crystal 1505a and the pI type Si single crystal 1505b as seeds. The conditions for forming the i-type semiconductor Si single crystal 150 layers include, for example, the gases used are SiH2CIL*:HCfL:H2-1,
2:2. O:100. Crystal formation temperature: 920°C, pressure: 1
50 Torr is appropriate. The crystals grow to the point where they collide, and grain boundaries are formed where they collide. Also, as a feature of this crystal growth, facets appear as shown in FIG. 19. The photovoltaic element thus formed can obtain electrical characteristics such as an open circuit voltage of 0.62V, a short circuit current of 32 mA/cm2, and a fill factor of 0.8 when irradiated with AM-I light, for example.

The photovoltaic element shown in FIG. 19 has an aperture ratio of 10 on the entrance surface.
Since it is 0%, the light incidence efficiency is extremely good.

(Second Embodiment) A second embodiment of the present invention will be described using FIGS. 20 to 22. First, as shown in FIG. 20, for example, an alumina substrate 2
Mo is sputter-deposited to a thickness of 1 μm on the entire surface of 001,
This is referred to as a lower electrode (second electrode) 2002. On top of this, a film 2003 of Sin was deposited to a thickness of 1000 nm by the CVD method, and then 50p was deposited using lithography and RIE equipment.
Contact holes of 2 μm square are provided in a two-dimensional matrix at m intervals. Here, the material of the substrate 2001 is not limited to alumina, but may be any material as long as it has high heat resistance. In addition to Mo, the material of the lower electrode 2002 is Mo.
Any material having a high nucleation density with respect to Si, such as W, may be used.

In the configuration of FIG. 20, Si is used on the film 20o3, and Si
The nucleation density is small, and there is no Si on the SiO2 film 2003.
No single crystals are formed. On the other hand, since the nucleation density of St is higher on the Mo film than on the Sin film, a Si single crystal is formed. , the ratio of this nucleation density is about 103 under the following crystal formation conditions. Next, St is deposited on a substrate 2000 shown in FIG. 2 by thermal CVD under the following crystal formation conditions. As a result, as shown in FIG. 21, island-like Si single crystals 2005 (second semiconductor crystals) grow from the Si single crystal nuclei generated only on the MO film 2001, and the grain size thereof is approximately 5 to 6 μm. Growth stopped when it reached a certain point. An example of crystal growth conditions is shown below.

Gas used H5i2HCu2 (source gas) BH3 (dopant gas) HCl (etching gas) H2 (carrier gas) Gas flow rate ratio: S iz HCItz : HCJZ: H2=1.
2: 1.8: 100 (1/min) Substrate temperature
): 900° C. In this example, since B (Boron) is doped, the Si single crystal 2005 is p-type.

Next, using PH as a dopant gas, an n-type Si single crystal 2006, which will become the first semiconductor crystal, is formed by selective epitaxial growth according to the following crystal formation conditions (Figs. 22 and 23). figure). Then, the adjacent n-type Si single crystals 2006 touch each other, and the grain boundaries 20
07, while a facet surface 2008 is formed on the upper part.
form. Then, the PHs gas concentration was increased on the n-type Si single crystal 2006 for ohmic contact with the electrode, and the following crystals were formed on the n0-type Si single crystal 2006 depending on the formation conditions.
09 layer 9 is formed to a thickness of 1 μm.

The crystal growth conditions are as follows: Gas flow rate ratio: S iz HCftz : HCIL 2 H2-1,2: 1.6 : 100 (u/mt
n) Crystal formation temperature: 920°C and pressure 150 TOrr.

Finally, on the grain boundary 2007 part of the Si semiconductor single crystal,
A comb-shaped electrode of fL is formed, and the upper electrode (first electrode) 201
Set to 0. The energy conversion efficiency of the photovoltaic element formed in this manner is about 16%, which is a good result. This is a significantly higher conversion efficiency than amorphous silicon solar cells, which are conventional large-area, low-cost solar cells.

In the above specific explanation, the semiconductor crystal is a Si single crystal, but the present invention is not limited to this, and other semiconductor crystals other than the St semiconductor crystal, such as GaAs , GaAsA1, etc. can also be formed, and the conductivity of these semiconductor crystals can be arbitrarily controlled to n-type and p-type to produce electronic devices such as photovoltaic elements and optical sensors, or LEDs, etc. Optical semiconductor devices such as lasers can be created.

[Effect of the invention] According to the present invention, the following effects can be obtained.

For example, the substrate material,
To provide a method for forming high-quality semiconductor crystals such as single crystals containing no grain boundaries and polycrystals with controlled grain boundaries without being restricted by structure, size, etc., and to provide crystal articles having the crystals obtained thereby. Can be done.

It is possible to provide a method for efficiently forming the semiconductor crystal through simple steps without using any special equipment.

A nucleation surface (SN) is formed on the crystal formation surface, which is made of a metal whose nucleation density is sufficiently higher than that of the material forming the crystal formation surface, and which has a sufficiently fine area to the extent that only a single nucleus grows.
DL) is provided, and a semiconductor crystal article having a semiconductor single crystal grown singly on the nucleation surface (SNDL) can be provided.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram showing the relationship between the size rc of a nucleus and the free energy G in the process of forming a thin film. FIGS. 2(A) and CB) are explanatory diagrams of the selective deposition method. FIG. 3 is a graph showing changes over time in the nucleation density (ND) of the SiO2 deposition surface and the silicon nitride deposition surface. FIGS. 4A to 4D are forming process diagrams showing a first embodiment of the method for forming a semiconductor crystal according to the present invention. FIGS. 5A and 5B are perspective views of the substrates in FIGS. 4A and 4D. FIGS. 6(A) to 6(D) are process diagrams for forming a semiconductor crystal showing a second embodiment of the present invention. FIGS. 7(A) to 7(D) are forming process diagrams showing a third embodiment of the method for forming a semiconductor crystal according to the present invention. FIGS. 8A and 8B are perspective views of the substrates in FIGS. 7A and 7D. FIGS. 9(A) to 9(D) are process diagrams for forming a semiconductor crystal showing a fourth embodiment of the present invention. FIGS. 10(A) to 10(D) are forming process diagrams showing a fifth embodiment of the method for forming a semiconductor crystal according to the present invention. 1st
1A and 1B are perspective views of the substrates in FIGS. 10A and 10D. FIGS. 12(A) to 12(D) are process diagrams for forming a semiconductor crystal showing a sixth embodiment of the present invention. FIGS. 13(A) to 13(D) are forming process diagrams showing a seventh embodiment of the method for forming a semiconductor crystal according to the present invention. 1st
4(A) and 4(B) are perspective views of the substrate in FIGS. 13(A) and 13(D). 15 to 19 are manufacturing process diagrams for explaining the first embodiment, and FIGS. 20 to 22 are manufacturing process diagrams for explaining the second embodiment. 1... Substrate, 2.3... Thin film, 4... Substrate (support), 5... Thin film (deposition surface (SNDS)), 6
...Nucleation surface (SNDL) 7.. Island-shaped semiconductor crystal grains, 8.. Single crystal layer, 9.. Support, 9A.. Nucleation surface (SNDL), 10.. -Support, 11...
Amorphous insulator support, 12...Amorphous metal thin film, 12
-1.12-2, 12A-1, 12A-2... Nucleation surface (SNDL), 13-1.13-2. Island-shaped semiconductor single crystal grains, 13A-1, 13A-2... semiconductor single crystal,
14... Crystal grain boundary, 15-1.15-2... Semiconductor single crystal film, 1501... Substrate, 1502a... Electrode for n-type semiconductor (first electrode), 1502b...p Electrode for type semiconductor (second electrode), 1503... Insulating film, 1
504...Contact hole, 1505a...n0
Type St single crystal, 1505b...p-type St single crystal which is second semiconductor crystal, 1506...Sin, film, 150
7...i-type semiconductor St single crystal, 2000...substrate,
2001... Alumina substrate, 2002... Lower electrode (second electrode), 2003... SiO2 film, 2005...
... Island-shaped p-type St single crystal (second semiconductor crystal), 20
06...n-type Si! #Crystal, 2007... Grain boundary, 2008... Facet surface, 2009... n
Type 2 Si single crystal, 2010...Top electrode (first electrode)
. Fig, 4A Fig, 4D half (C) (D) Fig, 13 !5-2 15-1 Fig, 14 (A) (B) Fig, 17 Fig, old Fig, 19 15δ2b 1502a

Claims (130)

[Claims] (1) The deposition surface (S_N_D_S) has a low nucleation density, and the nucleation density (ND_
S) A semiconductor crystal forming process is performed on a substrate having a free surface adjacent to a metal deposition surface (S_N_D_L) having a larger nucleation density (ND_L) to form a semiconductor single crystal from the single nucleus. A method for forming a semiconductor crystal, characterized by growing it. (2) The deposition surface (S_N_D_L) is the deposition surface (S_N_D_L).
2. The method for forming a semiconductor crystal according to claim 1, wherein a plurality of semiconductor crystals are partitioned and arranged within a semiconductor crystal. (3) The deposition surface (S_N_D_L) is the deposition surface (S_N_D_L).
_N_D_S) The method for forming a semiconductor crystal according to claim 1, wherein a plurality of semiconductor crystals are regularly partitioned and arranged within the semiconductor crystal. (4) The deposition surface (S_N_D_L) is the deposition surface (S_N_D_L).
_N_D_S) The method for forming a semiconductor crystal according to claim 1, wherein the semiconductor crystals are arranged in an irregularly partitioned manner. (5) The deposition surface (S_N_D_L) is the deposition surface (S_N_D_L).
_N_D_S) The method for forming a semiconductor crystal according to claim 1, wherein a plurality of semiconductor crystals are partitioned and arranged on the semiconductor crystal. (6) The deposition surface (S_N_D_L) is the deposition surface (S_N_D_L).
_N_D_S) The method for forming a semiconductor crystal according to claim 1, wherein a plurality of semiconductor crystals are regularly partitioned and arranged on the semiconductor crystal. (7) The deposition surface (S_N_D_L) is the deposition surface (S_N_D_L).
_N_D_S) The method for forming a semiconductor crystal according to claim 1, wherein a plurality of semiconductor crystals are irregularly partitioned and arranged on the semiconductor crystal. (8) The deposition surface (S_N_D_L) is the deposition surface (S_N_D_L).
2. The method of forming a semiconductor crystal according to claim 1, wherein the semiconductor crystal is formed of a material obtained by altering the metallic material forming the semiconductor crystal. (9) The deposition surface (S_N_D_L) is the deposition surface (S_N_D_L).
2. The method for forming a semiconductor crystal according to claim 1, wherein the semiconductor crystal is formed of a material different from a material forming the semiconductor crystal. (10) The method for forming a semiconductor crystal according to claim 1, wherein the semiconductor crystal forming process is a CVD method. (11) The method for forming a semiconductor crystal according to claim 1, wherein the deposition surface (S_N_D_S) is formed of an amorphous material. (12) The method for forming a semiconductor crystal according to claim 1, wherein a plurality of the deposition surfaces (S_N_D_L) are divided and provided, and a single crystal is grown from each of the deposition surfaces (S_N_D_L). (13) The semiconductor single crystal to be grown from each of the deposition surfaces (S_N_D_L) is
13. The method for forming a semiconductor crystal according to claim 12, wherein the semiconductor crystal is grown beyond the deposition surface (S_N_D_L) in the ) direction. (14) The semiconductor single crystal to be grown from each of the deposition surfaces (S_N_D_L) is
Claim 12: Growing the particles to adjacent sizes between D_L)
A method of forming the semiconductor crystal described above. (15) The method for forming a semiconductor crystal according to claim 1, wherein the deposition surface (S_N_D_L) is formed by an ion implantation method. (16) The method for forming a semiconductor crystal according to claim 1, wherein the deposition surface (S_N_D_S) is formed of silicon oxide, and the deposition surface (S_N_D_L) is formed of molybdenum. (17) It has two types of deposition surfaces with a sufficiently large difference in nucleation density (ΔND), and the deposition surface (S_N_D_L) with a larger nucleation density is made of metal, which is better than only a single nucleus. The deposition surface (
A method for forming a semiconductor crystal, characterized by forming a stable single nucleus in a semiconductor crystal (S_N_D_L) and growing a single crystal from the single nucleus. (18) The deposition surface (S_N_D_L) is the deposition surface (
18. The method for forming a semiconductor crystal according to claim 17, wherein a plurality of semiconductor crystals are partitioned and arranged within S_N_D_S. (19) The deposition surface (S_N_D_L) is the deposition surface (
18. The method for forming a semiconductor crystal according to claim 17, wherein a plurality of semiconductor crystals are regularly partitioned and arranged in S_N_D_S. (20) The deposition surface (S_N_D_L) is the deposition surface (
18. The method for forming a semiconductor crystal according to claim 17, wherein the semiconductor crystals are irregularly partitioned and arranged within S_N_D_S. (21) The deposition surface (S_N_D_L) is the deposition surface (
18. The method for forming a semiconductor crystal according to claim 17, wherein a plurality of semiconductor crystals are partitioned and arranged on a semiconductor crystal (S_N_D_S). (22) The deposition surface (S_N_D_L) is the deposition surface (
18. The method for forming a semiconductor crystal according to claim 17, wherein a plurality of semiconductor crystals are arranged in a regularly partitioned manner on the semiconductor crystal (S_N_D_S). (23) The deposition surface (S_N_D_L) is the deposition surface (
18. The method for forming a semiconductor crystal according to claim 17, wherein a plurality of semiconductor crystals are arranged in irregularly partitioned manner on the S_N_D_S. (24) The deposition surface (S_N_D_L) is the deposition surface (
18. The method for forming a semiconductor crystal according to claim 17, wherein the semiconductor crystal is formed of a material obtained by altering the metallic material forming the semiconductor crystal (S_N_D_S). (25) The deposition surface (S_N_D_L) is the deposition surface (
18. The method for forming a semiconductor crystal according to claim 17, wherein the semiconductor crystal is formed of a material different from a material forming the semiconductor crystal S_N_D_S. (26) The method for forming a semiconductor crystal according to claim 17, wherein the semiconductor crystal forming process is a CVD method. (27) The method for forming a semiconductor crystal according to claim 17, wherein the deposition surface (SN_D_S) is formed of an amorphous material. (28) The method for forming a semiconductor crystal according to claim 17, wherein a plurality of the deposition surfaces (S_N_D_L) are divided and provided, and a single crystal is grown from each of the deposition surfaces (S_N_D_L). (29) Semiconductor single crystal to be grown from each deposition surface (S_N_D_L)
29. The method for forming a semiconductor crystal according to claim 28, wherein the semiconductor crystal is grown beyond the deposition surface (S_N_D_L) in the ) direction. (30) The semiconductor single crystal to be grown from each of the deposition surfaces (S_N_D_L) is grown from the adjacent deposition surface (S_N_D_L).
29. The method for forming a semiconductor crystal according to claim 28, wherein the semiconductor crystals are grown to adjacent sizes. (31) The method for forming a semiconductor crystal according to claim 17, wherein the deposition surface (S_N_D_L) is formed by an ion implantation method. (32) The method for forming a semiconductor crystal according to claim 17, wherein the deposition surface (S_N_D_S) is formed of silicon oxide, and the deposition surface (S_N_D_L) is formed of molybdenum. (33) Deposition surface with low nucleation density (S_N_D_S)
The material (M_S) forming the deposition surface (S_N_D_S) is placed at a desired location on the deposition surface (S_N_D_S) of the substrate having The deposition surface (S_N_D_
The nucleation density (ND_S) is greater than the nucleation density (ND_S) of S).
Adding metal (M_L) forming a deposition surface (S_N_D_L) with
L) is formed, then a semiconductor crystal forming process is performed on the substrate to form a single nucleus on the deposition surface (S_N_D_L), and a semiconductor single crystal is grown from the single nucleus. How to form. (34) The deposition surface (S_N_D_L) is the deposition surface (
34. The method for forming a semiconductor crystal according to claim 33, wherein a plurality of semiconductor crystals are partitioned and arranged within S_N_D_S. (35) The deposition surface (S_N_D_L) is the deposition surface (
34. The method for forming a semiconductor crystal according to claim 33, wherein a plurality of semiconductor crystals are regularly partitioned and arranged in S_N_D_S. (36) The deposition surface (S_N_D_L) is the deposition surface (
34. The method for forming a semiconductor crystal according to claim 33, wherein the semiconductor crystals are irregularly partitioned and arranged within S_N_D_S. (37) The deposition surface (S_N_D_L) is the deposition surface (
34. The method for forming a semiconductor crystal according to claim 33, wherein a plurality of the semiconductor crystals are partitioned and arranged on a semiconductor crystal (S_N_D_S). (38) The deposition surface (S_N_D_L) is the deposition surface (
34. The method for forming a semiconductor crystal according to claim 33, wherein a plurality of the semiconductor crystals are arranged in a regularly partitioned manner on the semiconductor crystal (S_N_D_S). (39) The deposition surface (S_N_D_L) is the deposition surface (
34. The method for forming a semiconductor crystal according to claim 33, wherein a plurality of semiconductor crystals are arranged in irregularly partitioned manner on the semiconductor crystal (S_N_D_S). (40) The deposition surface (S_N_D_L) is the deposition surface (
34. The method for forming a semiconductor crystal according to claim 33, wherein the semiconductor crystal is formed of a material obtained by altering the metallic material forming the semiconductor crystal (S_N_D_S). (41) The deposition surface (S_N_D_L) is the deposition surface (
34. The method for forming a semiconductor crystal according to claim 33, wherein the semiconductor crystal is formed of a material different from a material forming the semiconductor crystal S_N_D_S. (42) The method for forming a semiconductor crystal according to claim 33, wherein the semiconductor crystal forming process is a CVD method. (43) The method for forming a semiconductor crystal according to claim 1, wherein the deposition surface (S_N_D_S) is formed of an amorphous material. (44) The method for forming a semiconductor crystal according to claim 33, wherein a plurality of the deposition surfaces (S_N_D_L) are divided and provided, and a single crystal is grown from each of the deposition surfaces (S_N_D_L). (45) Semiconductor single crystal to be grown from each deposition surface (S_N_D_L)
45. The method for forming a semiconductor crystal according to claim 44, wherein the semiconductor crystal is grown in the direction of ) beyond the deposition surface (S_N_D_L). (46) The semiconductor single crystal to be grown from each of the deposition surfaces (S_N_D_L) is grown from the adjacent deposition surface (S_N_D_L).
45. The method for forming a semiconductor crystal according to claim 44, wherein the semiconductor crystals are grown to adjacent sizes between _L). (47) The method for forming a semiconductor crystal according to claim 33, wherein the deposition surface (S_N_D_L) is formed by an ion implantation method. (48) The method for forming a semiconductor crystal according to claim 33, wherein the deposition surface (S_N_D_S) is formed of silicon oxide, and the deposition surface (S_N_D_L) is formed of molybdenum. (49) Deposition surface with low nucleation density (S_N_D_S)
is arranged adjacent to the deposition surface (S_N_D_S), has a sufficiently small area for crystal growth from only a single nucleus, and has a nucleation density (ND_S) of the deposition surface (S_N_D_S).
a substrate having a deposition surface (S_N_D_L) of metal having a greater nucleation density (ND_L); and a substrate having a metal deposition surface (S_N_D_L) that grows from said single nucleus and extends beyond said deposition surface (S_N_D_L) and sufficiently covers said deposition surface (S_N_D_S). A semiconductor crystal article characterized by having a semiconductor single crystal. (50) The semiconductor crystal article according to claim 49, wherein a plurality of the deposition surfaces (S_N_D_L) are arranged. (51) The semiconductor crystal article according to claim 49, wherein a plurality of the deposition surfaces (S_N_D_L) are partitioned and arranged. (52) The deposition surface (S_N_D_L) is the deposition surface (
2. The semiconductor crystal article according to claim 1, wherein a plurality of semiconductor crystal articles are arranged in a plurality of regularly partitioned portions within the semiconductor crystal article S_N_D_S. (53) The deposition surface (S_N_D_L) is the deposition surface (
50. The semiconductor crystal article according to claim 49, wherein a plurality of semiconductor crystal articles are irregularly partitioned and arranged in S_N_D_S. (54) The semiconductor crystal article according to claim 50, wherein the semiconductor single crystal grown from each of the deposition surfaces (S_N_D_L) is adjacent to the semiconductor single crystal grown from the adjacent deposition surface (S_N_D_L). (55) The single crystal grown from each of the deposition surfaces (S_N_D_L) is spatially separated from the semiconductor single crystal grown from the adjacent deposition surface (S_N_D_L).
0. The semiconductor crystal article according to 0. (56) The crystal formation surface is formed of a metal whose nucleation density (ND) is sufficiently larger than that of the amorphous material forming the crystal formation surface, and has a sufficiently fine area to the extent that only a single nucleus grows. A semiconductor crystal article characterized by being provided with a nucleation surface (S_N_D_L) and having a semiconductor single crystal grown singly on the nucleation surface (S_N_D_L). (57) A plurality of the nucleation surfaces (S_N_D_L) are provided at desired intervals, and the nucleation surfaces (S_N_D_L) are provided at desired intervals.
57. The semiconductor crystal article according to claim 56, wherein the semiconductor crystal article has a grain boundary approximately at the center between ). (58) A method of forming a semiconductor crystal by utilizing a difference in nucleation density of a crystal forming material depending on the type of material forming a crystal forming surface, the method comprising using a material forming the crystal forming surface on the crystal forming surface. A metal with a sufficiently large nucleation density and a nucleation surface (
S_N_D_L) and the nucleation surface (S_N_D_
A method for forming a semiconductor crystal, characterized in that a semiconductor crystal is formed by forming only a single nucleus in L) and growing a semiconductor single crystal from the single nucleus. (59) The nucleation surface (S_N_D_L) is formed by depositing a metal having a sufficiently higher nucleation density than the material forming the crystal formation surface on the crystal formation surface, and then patterning it sufficiently finely. A method for forming a semiconductor crystal according to claim 58. (60) The nucleation surface (S_N_D_L) is a metal material that transforms the material forming the crystal formation surface into a material having a sufficiently higher nucleation density than the material, and ions are applied to a sufficiently fine region of the crystal formation surface. 59. The method of forming a semiconductor crystal according to claim 58, wherein the semiconductor crystal is formed by implantation. (61) In a method of forming a semiconductor single crystal by utilizing the difference in the nucleation density of the crystal forming material depending on the type of material forming the crystal forming surface, the crystal forming surface formed of an amorphous material is prepared. , a metal whose nucleation density is sufficiently higher than that of the material forming the crystal formation surface, which has a sufficiently small area for only a single nucleus to grow, and whose size is the same as or smaller than the required size of the semiconductor crystal. A nucleation surface (S_N_D_L) is provided on the crystal formation surface at a distance above, and then only a single nucleus is formed on the nucleation surface (S_N_D_L), and a semiconductor single crystal is formed from the single nucleus. A method for forming a semiconductor crystal, characterized by selectively forming a semiconductor crystal layer by growing it. (62) The method for forming a semiconductor crystal according to claim 61, wherein the nucleation plane (S_N_D_L) is arranged in a lattice pattern on the crystal formation plane formed of the amorphous material. (63) Non-nucleation surface (S_N_
D_S) and the non-nucleation surface (D_S) is formed of a metal different from the amorphous material, and the non-nucleation surface (
a substrate for forming a semiconductor crystal having a nucleation surface (S_N_D_L) having a higher nucleation density (ND) than S_N_D_S); 1. A semiconductor crystal article comprising: a semiconductor crystal formed as a semiconductor crystal; (64) Claim 63 wherein the amorphous material is SiO_2.
The semiconductor crystal article described above. (65) A semiconductor crystal article obtained by the method of claim 1. (66) A semiconductor crystal article obtained by the method of claim 17. (67) A semiconductor crystal article obtained by the method of claim 33. (68) A semiconductor crystal article obtained by the method of claim 59. (69) A semiconductor crystal article obtained by the method of claim 62. (70) An electronic device manufactured using the crystal article according to claim 49. (71) An electronic device manufactured using the crystalline article according to claim 56. (72) An electronic device manufactured using the crystalline article according to claim 64. (73) A non-nucleation surface (S_N_D_S) with a low nucleation density and a non-nucleation surface (S_N_D_S)
), has a sufficiently smaller area for crystal growth than a single nucleus, and has a nucleation density (ND_L) larger than the nucleation density (ND_S) of the non-nucleation surface (S_N_D_S).
) and a metal nucleation surface (S_N_D_L), and a semiconductor crystal formation process is performed on a substrate having a free surface composed of a metal nucleation surface (S_N_D_L) to grow a semiconductor single crystal from the single nucleus. Method. (74) The method for forming a semiconductor crystal according to claim 73, wherein the nucleation plane (S_N_D_L) is divided into a plurality of sections. (75) The method for forming a semiconductor crystal according to claim 73, wherein a plurality of the nucleation planes (S_N_D_L) are regularly partitioned and arranged. (76) The method for forming a semiconductor crystal according to claim 74, wherein the nucleation plane (S_N_D_L) is arranged in irregularly divided sections. (77) The method for forming a semiconductor crystal according to claim 73, wherein a plurality of the nucleation surfaces (S_N_D_L) are partitioned and arranged below the non-nucleation surface (S_N_D_S). (78) The method for forming a semiconductor crystal according to claim 73, wherein the nucleation surface (S_N_D_L) is arranged in regular compartments below the non-nucleation surface (S_N_D_S). (79) The method for forming a semiconductor crystal according to claim 73, wherein the nucleation surface (S_N_D_L) is irregularly partitioned and arranged below the non-nucleation surface (S_N_D_S). (80) The method for forming a semiconductor crystal according to claim 73, wherein the nucleation surface (S_N_D_L) is formed of a material that is modified from the material forming the non-nucleation surface (S_N_D_S). (81) The method for forming a semiconductor crystal according to claim 73, wherein the nucleation surface (S_N_D_L) is formed of a metal different from a material forming the non-nucleation surface (S_N_D_S). (82) The method for forming a semiconductor crystal according to claim 73, wherein the semiconductor crystal forming process is a CVD method. (83) The method for forming a semiconductor crystal according to claim 73, wherein the non-nucleation surface (S_N_D_S) is formed of an amorphous material. (84) The method for forming a semiconductor crystal according to claim 73, wherein a plurality of the nucleation surfaces (S_N_D_L) are divided and provided, and a semiconductor single crystal is grown from each of the nucleation surfaces (S_N_D_L). (85) The semiconductor single crystal to be grown from each of the nucleation surfaces (S_N_D_L) is grown in the direction of each of the nucleation surfaces (S_N_D_L).
85. The method for forming a semiconductor crystal according to claim 84, wherein the semiconductor crystal is grown to a depth exceeding . (86) The semiconductor single crystal grown from each of the nucleation surfaces (S_N_D_L) is grown from the adjacent nucleation surface (S_N_D_L).
Claim 8: _D_L) are grown to adjacent sizes.
4. The method for forming a semiconductor crystal according to 4. (87) The method for forming a semiconductor crystal according to claim 73, wherein the nucleation surface (S_N_D_L) is formed by an ion implantation method. (88) The method for forming a semiconductor crystal according to claim 73, wherein the non-nucleation surface (S_N_D_S) is formed of silicon oxide, and the nucleation surface (S_N_D_L) is formed of molybdenum. (89) It has two types of crystal formation planes with a sufficiently large difference in nucleation density (ΔND), and the nucleation plane (S_N_D_L) made of the metal with the larger nucleation density is the one with the smaller nucleation density. The substrate is exposed from the non-nucleation surface (S_N_D_S) and has a sufficiently fine area for a semiconductor single crystal to grow from a single nucleus. ) A method for forming a semiconductor crystal, the method comprising forming a stable single nucleus and growing a single crystal from the single nucleus. (90) The method for forming a semiconductor crystal according to claim 89, wherein a plurality of the nucleation surfaces (S_N_D_L) are partitioned and arranged. (91) The method for forming a semiconductor crystal according to claim 89, wherein a plurality of the nucleation surfaces (S_N_D_L) are regularly partitioned and arranged. (92) The method for forming a semiconductor crystal according to claim 89, wherein the nucleation plane (S_N_D_L) is arranged in irregularly divided sections. (93) The method for forming a semiconductor crystal according to claim 89, wherein a plurality of the nucleation surfaces (S_N_D_L) are partitioned and arranged below the non-nucleation surface (S_N_D_S). (94) The method for forming a semiconductor crystal according to claim 89, wherein the nucleation surface (S_N_D_L) is arranged in regular compartments below the non-nucleation surface (S_N_D_S). (95) The method for forming a semiconductor crystal according to claim 89, wherein the nucleation surface (S_N_D_L) is irregularly partitioned and arranged below the non-nucleation surface (S_N_D_S). (96) The method for forming a semiconductor crystal according to claim 89, wherein the nucleation surface (S_N_D_L) is formed of an altered material. (97) The method for forming a semiconductor crystal according to claim 89, wherein the nucleation surface (S_N_D_L) is formed of a metal different from a material forming the non-nucleation surface (S_N_D_S). (98) The method for forming a semiconductor crystal according to claim 89, wherein the semiconductor crystal forming process is a CVD method. (99) The method for forming a semiconductor crystal according to claim 89, wherein the non-nucleation surface (S_N_D_S) is formed of an amorphous material. (100) The method for forming a semiconductor crystal according to claim 89, wherein a plurality of the nucleation surfaces (S_N_D_L) are divided and provided, and a single crystal is grown from each of the nucleation surfaces (S_N_D_L). (101) Each of the nucleation surfaces (S_N_D_L)
The semiconductor single crystal to be further grown is placed on each nucleation surface (S_N_
101. The method for forming a semiconductor crystal according to claim 100, wherein the semiconductor crystal is grown in a direction (D_L) beyond the nucleation plane (S_N_D_L). (102) Each of the nucleation surfaces (S_N_D_L)
Adjacent nucleation surfaces (S_
101. The method for forming a semiconductor crystal according to claim 100, wherein the semiconductor crystals are grown to adjacent sizes between N_D_L. (103) Claim 8, wherein the nucleation surface (S_N_D_L) is formed by an ion implantation method.
9. The method for forming a semiconductor crystal according to 9. (104) The method for forming a semiconductor crystal according to claim 89, wherein the non-nucleation surface (S_N_D_S) is formed of silicon oxide, and the nucleation surface (S_N_D_L) is formed of molybdenum. (105) At a desired position on the surface of the substrate having a surface with a high nucleation density, a portion with a sufficiently small area for crystal growth from a single nucleus is exposed as a nucleation surface (S_N_D_L), and the nucleation surface is Unlike the metal (M_L) forming the nucleation surface (S_N_D_L), the nucleation surface (S_N
A non-nucleating surface (S_N_D_S) with a nucleation density (ND_S) smaller than a nucleation density (ND_L) of
) to form said non-nucleating surface (S_N_D_S) to create a substrate;
A method for forming a semiconductor crystal, comprising performing a semiconductor crystal forming process on the substrate to form a single nucleus on the nucleation surface (S_N_D_L), and growing a semiconductor single crystal from the single nucleus. (106) The method for forming a semiconductor crystal according to claim 105, wherein the nucleation plane (S_N_D_L) is divided into a plurality of sections. (107) The method for forming a semiconductor crystal according to claim 106, wherein a plurality of the nucleation planes (S_N_D_L) are regularly partitioned and arranged. (108) The method for forming a semiconductor crystal according to claim 106, wherein the nucleation plane (S_N_D_L) is arranged in irregularly divided sections. (109) The method for forming a semiconductor crystal according to claim 106, wherein a plurality of the nucleation surfaces (S_N_D_L) are partitioned and arranged below the non-nucleation surface (S_N_D_S). (110) The method for forming a semiconductor crystal according to claim 106, wherein the nucleation surface (S_N_D_L) is arranged in regular compartments below the non-nucleation surface (S_N_D_S). (111) The method for forming a semiconductor crystal according to claim 106, wherein the nucleation surface (S_N_D_L) is irregularly partitioned and arranged below the non-nucleation surface (S_N_D_S). (112) The method for forming a semiconductor crystal according to claim 106, wherein the nucleation surface (S_N_D_L) is formed of an altered material. (113) The method for forming a semiconductor crystal according to claim 106, wherein the nucleation surface (S_N_D_L) is formed of a metal different from a material forming the non-nucleation surface (S_N_D_S). (114) The method for forming a semiconductor crystal according to claim 106, wherein the semiconductor crystal forming process is a CVD method. (115) The method for forming a semiconductor crystal according to claim 106, wherein the non-nucleation surface (S_N_D_S) is formed of an amorphous material. (116) The method for forming a semiconductor crystal according to claim 106, wherein a plurality of the nucleation surfaces (S_N_D_L) are divided and provided, and a single crystal is grown from each of the nucleation surfaces (S_N_D_L). (117) Each of the nucleation surfaces (S_N_D_L)
The semiconductor single crystal to be further grown is placed on each nucleation surface (S_N_
118. The method for forming a semiconductor crystal according to claim 117, wherein the semiconductor crystal is grown in a direction (D_L) beyond the nucleation plane (S_N_D_L). (118) Each of the above nucleation surfaces (S_N_D_L)
Adjacent nucleation surfaces (S_
118. The method for forming a semiconductor crystal according to claim 117, wherein the semiconductor crystal is grown to a size that is adjacent to each other between N_D_L. (119) The method for forming a semiconductor crystal according to claim 106, wherein the nucleation surface (S_N_D_L) is formed by an ion implantation method. (120) The method for forming a semiconductor crystal according to claim 106, wherein the non-nucleation surface (S_N_D_S) is formed of silicon oxide, and the nucleation surface (S_N_D_L) is formed of molybdenum. (121) A method of forming a semiconductor crystal by utilizing the difference in the nucleation density of the crystal forming material depending on the type of material forming the crystal forming surface, the method comprising: A nucleation surface (S_N_D_
the metal (M_L), leaving an exposed portion of the surface with a sufficiently fine area for only a single nucleus to grow (M_L);
A thin film of a material (M_S) with a lower nucleation density is provided,
The nucleation surface (S_N_D_L) is
A method for forming a semiconductor crystal, characterized in that a semiconductor crystal is formed by forming only a single nucleus in D_L) and growing a semiconductor single crystal from the single nucleus. (122) The nucleation surface (S_N_D_L) is formed by depositing a metal having a sufficiently higher nucleation density than the material forming the crystal formation surface on the crystal formation surface and then patterning it sufficiently finely. Claim 1
22. The method for forming a semiconductor crystal according to 21. (123) The nucleation surface (S_N_D_L) is formed by ion-implanting a metal that transforms the material forming the crystal formation surface into a material with a sufficiently higher nucleation density than each material into a sufficiently fine region of the crystal formation surface. 122. The method for forming a semiconductor crystal according to claim 121, wherein the semiconductor crystal is formed by. (124) In a method of forming a semiconductor crystal by utilizing the difference in the nucleation density of the crystal forming material depending on the type of material forming the crystal forming surface, a surface formed of an amorphous material with a sufficiently high nucleation density is used. a thin film of a material having a lower nucleation density than the amorphous material is selectively provided on the surface, and has an area fine enough to allow only a single nucleus to grow; The nucleation surface (S_N
_D_L), and then
A method for forming a semiconductor crystal, characterized in that only a single nucleus is formed on the nucleation surface (S_N_D_L), and a semiconductor single crystal is grown from the single nucleus to form a semiconductor crystal. (125) The method for forming a semiconductor crystal according to claim 124, wherein the nucleation surface (S_N_D_L) is arranged in a lattice shape on the non-nucleation surface (S_N_D_S). (126) A crystal article obtained by the method according to claim 73. (127) A crystal article obtained by the method according to claim 89. (128) A crystal article obtained by the method according to claim 105. (129) A crystal article obtained by the method according to claim 121. (130) A crystal article obtained by the method according to claim 124.