JPH01131443A - Formation of protective film - Google Patents
Formation of protective filmInfo
- Publication number
- JPH01131443A JPH01131443A JP29015087A JP29015087A JPH01131443A JP H01131443 A JPH01131443 A JP H01131443A JP 29015087 A JP29015087 A JP 29015087A JP 29015087 A JP29015087 A JP 29015087A JP H01131443 A JPH01131443 A JP H01131443A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- protective layer
- protective film
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims description 36
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000011241 protective layer Substances 0.000 claims abstract description 33
- 238000007733 ion plating Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 22
- 239000010410 layer Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 abstract description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、電極が形成された基板表面に絶縁性の保護膜
を形成する方法に関する。本発明の保護膜の形成方法は
、雨センサ、結露センサなどを製造するのに利用できる
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of forming an insulating protective film on the surface of a substrate on which electrodes are formed. The method for forming a protective film of the present invention can be used to manufacture rain sensors, dew sensors, and the like.
［従来の技術］
自動車に用いられる雨センサ、結露センサなどは、ガラ
ス表面などに装着されるため透明であることが望ましい
。そのため従来、ガラスなどの透明基板本体表面にＩＴ
Ｏ（ＩｒｚＯ３−３ｎＱｚ ）などから透明な電極をく
し歯状に形成している。[Prior Art] Rain sensors, dew condensation sensors, and the like used in automobiles are preferably transparent because they are attached to glass surfaces. Therefore, conventionally, IT was placed on the surface of the main body of a transparent substrate such as glass.
A transparent electrode made of O (IrzO3-3nQz) or the like is formed in a comb-like shape.
この電極は、そのままでは一般に耐久性や強度に劣り、
破損しやすいという不具合がある。そこで従来より、耐
久性、強度などに優れた絶縁性保護膜で基板本体および
電極を被覆することにより保護している。この保護膜の
材質としては、Ａｇ２Ｏ３、ＳｉＯ２などの絶縁体が代
表的であり、−般に真空蒸着法、スパッタリング法、イ
オンプレーティング法などのＰＶＤ法により形成されて
いる。This electrode is generally inferior in durability and strength as it is;
The problem is that it is easily damaged. Conventionally, the substrate body and electrodes have been protected by being coated with an insulating protective film that has excellent durability and strength. The material of this protective film is typically an insulator such as Ag2O3 or SiO2, and is generally formed by a PVD method such as a vacuum evaporation method, a sputtering method, or an ion plating method.
なお、保護膜と電極との付着性を向上させる方法として
、特開昭６１−１６５７３１号公報には、透明電極表面
に保護膜を形成した侵、熱処理を行う方法が開示されて
いる。As a method for improving the adhesion between the protective film and the electrode, JP-A-61-165731 discloses a method in which a protective film is formed on the surface of a transparent electrode and subjected to corrosion and heat treatment.
［発明が解決しようとする問題点］
上記した従来の保護膜形成方法では、電極をもつ基板全
体に均一な厚さで保護膜が形成される。[Problems to be Solved by the Invention] In the conventional protective film forming method described above, a protective film is formed with a uniform thickness over the entire substrate having an electrode.
ところで、基板表面には電極が部分的に形成されている
ために、第４図に示すように、基板表面は電極１００が
凸、基板本体２００の表出する部分が凹の凹凸形状をな
している。そのため保護膜３ｏｏが均一な厚さで形成さ
れると、第４図に示すように凹凸形状がほとんどそのま
ま表出する。従って電極１００が形成されていない凹部
では保護Ｉｔ！ ３００にもその形状に沿った凹部３０
１が生じ、電極１’ＯＯのエツジ部１ｏ１、すなわち凹
部３０１側の角部における保護膜３００Ｓ薄くなる。そ
のため、その部分の耐久性、強度などが低下する場合が
あった。Incidentally, since electrodes are partially formed on the substrate surface, the substrate surface has an uneven shape with the electrode 100 being convex and the exposed portion of the substrate main body 200 being concave, as shown in FIG. There is. Therefore, when the protective film 3oo is formed to have a uniform thickness, the uneven shape is exposed almost as is, as shown in FIG. Therefore, in the recess where the electrode 100 is not formed, protection It! 300 also has a recess 30 that follows its shape.
1 occurs, and the protective film 300S at the edge portion 1o1 of the electrode 1'OO, that is, the corner portion on the recessed portion 301 side becomes thinner. Therefore, the durability, strength, etc. of that part may be reduced.
これに対し、電極のエツジ部においても充分な耐久性、
強度などが得られるように保護膜を厚くすることが考え
られる。しかしながら、その場合にはエツジ部以外の部
分、例えば電極の上部の厚さが必要以上に厚くなり、透
明性が低下するという不具合が生ずる。On the other hand, even the edge part of the electrode has sufficient durability.
It is conceivable to make the protective film thicker so as to obtain strength. However, in this case, a problem arises in that the thickness of the portion other than the edge portion, for example, the upper part of the electrode becomes thicker than necessary, resulting in a decrease in transparency.
さらに、このような凹凸形状の表面を有する雨センサを
自動車のフロントガラス表面などに装着した場合には、
ワイパが雨センサ表面を摺動する時に振動が生じ、拭き
不良や異音が発生する場合がある。Furthermore, when a rain sensor with such an uneven surface is attached to the windshield surface of a car,
When the wiper slides on the surface of the rain sensor, vibrations may occur, resulting in poor wiping or abnormal noise.
このような問題点を解決するものとして、特開昭６２−
９６４８号公報には、電極をマスク剤を用いてバターニ
ングし、次いでマスク剤の上から充填膜を形成した後マ
スク剤を除去することで電極以外の凹部に充填膜を形成
し、その後全体に保護膜を形成することで、保護膜の表
面を平滑にする保護膜の形成方法が開示されている。し
かし、この方法では充填膜を形成する工程と保護膜を形
成する工程の間に、マスク剤を除去する工程が必要であ
り、充填膜と保護膜とを連続的に形成することができな
かった。As a solution to these problems, Japanese Patent Application Laid-open No. 62-
No. 9648 discloses that the electrode is buttered using a masking agent, then a filling film is formed on top of the masking agent, and then the masking agent is removed to form a filling film in the recesses other than the electrode, and then the whole is covered with a filling film. A method for forming a protective film is disclosed in which the surface of the protective film is smoothed by forming the protective film. However, this method requires a step of removing the masking agent between the step of forming the filling film and the step of forming the protective film, making it impossible to form the filling film and the protective film continuously. .
本発明は、上記特開昭６２−９６４８号公報と同様の観
点からなされたものであり、表面平滑な保護膜を連続的
に形成することができる方法を提供するものである。The present invention has been made from the same viewpoint as the above-mentioned Japanese Patent Application Laid-Open No. 62-9648, and provides a method capable of continuously forming a protective film with a smooth surface.
［問題点を解決するための手段］
本発明の保護膜の形成方法は、部分的に電極が形成され
た基板表面に絶縁性の保護膜を形成する方法であって、
電極に正の電圧を印加した状態でイオンプレーティング
法により基板表面に第１保護層を形成する第１工程と、
電極に電圧を印加しない状態で第１保ＩＩ層が形成され
た基板表面に第２保護層を形成する第２工程と、を順に
行うことを特徴とする。[Means for Solving the Problems] The method for forming a protective film of the present invention is a method for forming an insulating protective film on the surface of a substrate on which electrodes are partially formed, the method comprising:
A first step of forming a first protective layer on the substrate surface by an ion plating method while applying a positive voltage to the electrode;
The method is characterized in that a second step of forming a second protective layer on the surface of the substrate on which the first protective layer is formed is performed in sequence without applying a voltage to the electrodes.
本発明に用いられる基板では、基板本体に部分的に電極
が形成されている。基板本体は樹脂、セラミックスなど
の絶縁体から形成され、必要に応じてガラスなどの透明
絶縁体が用いられる。また電極は銅、アルミニウムなど
の導電物質から形成され、必要に応じてＩＴＯなどの透
明導電物質を用いることもできる。なお、基板本体に電
極を形成するには、スクリーン印刷法、マスク剤による
バターニング法など、従来知られている方法を用いるこ
とができる。In the substrate used in the present invention, electrodes are partially formed on the substrate body. The substrate body is formed from an insulator such as resin or ceramics, and a transparent insulator such as glass may be used as necessary. Further, the electrodes are formed from a conductive material such as copper or aluminum, and a transparent conductive material such as ITO may be used as necessary. Note that in order to form the electrodes on the substrate body, conventionally known methods such as a screen printing method and a patterning method using a masking agent can be used.
本発明の特色をなす第１工程は、電極に正の電圧を印加
した状態でイオンプレーティング法により基板表面に第
１保護層を形成する工程である。The first step, which is a feature of the present invention, is a step of forming a first protective layer on the substrate surface by ion plating while applying a positive voltage to the electrode.
イオンプレーティング法においては、ガス分子（原子）
の電１１電圧は他の元素分子（原子）の電離電圧よりも
大きいため、プラズマ内で衝突により電荷の交換が行わ
れ蒸発粒子のイオンができる。In the ion plating method, gas molecules (atoms)
Since the electric charge 11 voltage is higher than the ionization voltage of molecules (atoms) of other elements, charges are exchanged by collision within the plasma and ions of vaporized particles are formed.
この蒸発粒子のイオンは正（＋）のイオンである。The ions of the evaporated particles are positive (+) ions.
ところが本発明では電極には正の電圧が印加されている
。従って蒸発粒子は電気的反発により電極表面に付着す
るのが妨げられ、電極以外の四部（基板本体の表出する
表面）に優先的に付着する。However, in the present invention, a positive voltage is applied to the electrodes. Therefore, the evaporated particles are prevented from adhering to the electrode surface due to electrical repulsion, and preferentially adhere to the four parts (the exposed surface of the substrate body) other than the electrode.
すなわち第１保護層は主として電極以外の凹部に形成さ
れる。これにより、基板表面の凹凸が少なくなる。That is, the first protective layer is mainly formed in the recesses other than the electrodes. This reduces irregularities on the substrate surface.
電極に印加される電圧は、直流１００〜５００Ｖである
ことが望ましい。１００Ｖより低いと電極表面にも第１
保Ｗ１層が多く付着するようになり、得られる保護膜の
平滑性に劣るようになる。また５００■より高いと放電
が発生し、膜にダメージが与えられる等の不具合が生じ
る場合がある。The voltage applied to the electrodes is preferably 100 to 500 V DC. If it is lower than 100V, the first voltage will also be on the electrode surface.
A large amount of the W1 layer adheres, and the smoothness of the resulting protective film becomes poor. If it is higher than 500μ, discharge may occur and problems such as damage to the film may occur.
第１保護層を形成する蒸発源としては、ＡＪＩ ｔ０３
、Ｓｉｎｇ、ＺｒＯ２、ＣｅＯ２、ＭＯＡｌｌＯｎ、Ｔ
ｉ０ｚなどが挙げられるが、これに限られるものではな
くイオンプレーティング法により成膜できる絶縁体であ
れば特に制限されない。As the evaporation source for forming the first protective layer, AJI t03
, Sing, ZrO2, CeO2, MOAllOn, T
Examples include i0z, but the material is not limited thereto, and is not particularly limited as long as it is an insulator that can be formed into a film by an ion plating method.
またイオンプレーティング法としては、直流励起イオン
プレーティング法、高周波励起イオンプレーティング法
などを採用することができる。そして゛上記酸化物をそ
のまま蒸発源としてもよいし、反応性イオンプレーティ
ング法で成膜することもできる。Further, as the ion plating method, a direct current excitation ion plating method, a high frequency excitation ion plating method, etc. can be adopted. The above oxide may be used as an evaporation source, or a film may be formed by reactive ion plating.
第２工程は、電極に電圧を印加しない状態で第１保ＷＩ
層が形成された基板表面に第２保護層を形成する工程で
ある。電極に電圧が印加されていない状態では、蒸発粒
子のイオンは基板表面にほぼ均一な厚さで付着する。ま
た基板表面には第１工程で第１保護層が電極以外の凹部
に形成され、平滑な表面となっている。従って第２工程
では第２保護層が、第１保護層および電極の表面に均一
に付着し、平滑な保護膜が形成される。In the second step, the first insulation is applied with no voltage applied to the electrodes.
This is a step of forming a second protective layer on the surface of the substrate on which the layer is formed. When no voltage is applied to the electrodes, the ions of the evaporated particles adhere to the substrate surface with a substantially uniform thickness. Further, a first protective layer is formed on the surface of the substrate in the recesses other than the electrodes in the first step, resulting in a smooth surface. Therefore, in the second step, the second protective layer is uniformly attached to the surfaces of the first protective layer and the electrode, forming a smooth protective film.
なお、第１保護層は電極の厚さとほぼ同じ厚さに形成す
ることが望ましいが、電極のエツジ部に形成される保護
膜の厚さが充分に得られれば、電極の厚さより薄くても
よいし厚くすることもできる。また第２保護層を構成す
る物質の材質は、絶縁体であれば特に制限されず、第１
保護層と同じでもよいし異なる材質とすることもできる
。Note that it is desirable to form the first protective layer to approximately the same thickness as the electrode, but if the protective film formed on the edge of the electrode is sufficiently thick, it may be thinner than the electrode. It's good and you can make it thicker. Further, the material constituting the second protective layer is not particularly limited as long as it is an insulator;
It may be the same material as the protective layer or may be made of a different material.
この第２工程は第１工程と同一の蒸発源を用い、同様の
イオンプレーティング法で行うことが望ましい。このよ
うにすれば、電極への電圧の印加を止めるだけで連続的
に第２工程を行うことができ、生産効率が極めて高い。It is desirable that this second step uses the same evaporation source as the first step and is performed using the same ion plating method. In this way, the second step can be performed continuously by simply stopping the application of voltage to the electrodes, resulting in extremely high production efficiency.
また、第２工程（々全体に熱処理を施して、保護膜と電
極との付着性を向上させることも、従来と同様に行うこ
とができる。In addition, the second step (applying heat treatment to the entire structure to improve the adhesion between the protective film and the electrode can also be performed in the same manner as in the past).
［発明の作用および効果］
本発明の保護膜形成方法では、第１工程でイオンプレー
ティングにより第１保護層が形成される時に、電極には
正の電圧が印加されている。従って、イオン化された蒸
発粒子は電気的反発により電極表面に付着するのが防止
され、電極表面よりも低い凹部である基板本体表面に付
着する。これにより、基板本体表面に第１保護層が形成
され、第１工程の進行とともに電極表面と第１保護層表
面との高さの差が小さくなる。[Operations and Effects of the Invention] In the protective film forming method of the present invention, a positive voltage is applied to the electrode when the first protective layer is formed by ion plating in the first step. Therefore, the ionized evaporated particles are prevented from adhering to the electrode surface due to electrical repulsion, and instead adhere to the surface of the substrate main body, which is a recessed portion lower than the electrode surface. As a result, the first protective layer is formed on the surface of the substrate body, and as the first step progresses, the difference in height between the electrode surface and the first protective layer surface becomes smaller.
そして第２工程では、電極への電圧の印加が除かれるた
め、第２保護層は電極表面および第１保護層表面に均一
に付着する。In the second step, since the voltage is not applied to the electrode, the second protective layer is uniformly attached to the electrode surface and the first protective layer surface.
従って本発明の保護膜形成方法によれば、表面の凹凸が
少なく平滑な保護膜を容易に形成することができる。こ
れにより、電極のエツジ部に形成される保護膜の厚さも
、他の部分における厚さと同様に所定の耐久性、強度を
得るのに充分な厚さとなり、電極全体が良好に保護され
る。しかも、エツジ部以外の部分における保護膜の厚さ
が必要以上に厚くなることもないため、透明性も゛良好
に維持される。Therefore, according to the protective film forming method of the present invention, it is possible to easily form a smooth protective film with few surface irregularities. As a result, the thickness of the protective film formed on the edge portion of the electrode, as well as the thickness on other portions, becomes sufficient to obtain a predetermined durability and strength, and the entire electrode is well protected. Furthermore, since the thickness of the protective film in areas other than the edge portions does not become unnecessarily thick, good transparency is maintained.
［実施例］
以下実施例により具体的に説明する。本実施例は自動車
用雨センサの製造に本発明を適用したものである。[Example] The following is a concrete explanation using Examples. In this embodiment, the present invention is applied to the manufacture of a rain sensor for automobiles.
第２図に本実施例に用いた基板の断面図を示す。FIG. 2 shows a cross-sectional view of the substrate used in this example.
この基板１は、ガラス製の透明な基板本体１０と、基板
本体１０表面に形成されｆＴｏよりなるくし歯状の透明
電極１１と、より構成される。この基板１は次のように
して形成された。This substrate 1 is composed of a transparent substrate body 10 made of glass, and comb-shaped transparent electrodes 11 formed on the surface of the substrate body 10 and made of fTo. This substrate 1 was formed as follows.
まず基板本体１０に、蒸着、スパッタリング、イオンプ
レーティングなどにより約１１００ｎのＩ Ｔ ＯＩＩ
Ｉを形成する。このｆＴｏ膜は可視光線に対して透明で
、導電性を有している。次にＩＴＯ膜表面にマスク剤と
して紫外線硬化型のフォトレジストをくし歯パターンに
スクリーン印刷し、紫外線を照射して硬化させる。その
後、塩酸などの腐蝕液に浸してエツチングすることによ
り、ｆＴｏ膜はマスクされている部分を残して除去され
る。First, about 1100n of ITOII is applied to the substrate body 10 by vapor deposition, sputtering, ion plating, etc.
Form I. This fTo film is transparent to visible light and has electrical conductivity. Next, an ultraviolet curable photoresist is screen printed on the surface of the ITO film as a masking agent in a comb-tooth pattern, and is cured by irradiating ultraviolet rays. Thereafter, the fTo film is removed leaving the masked portion by immersion in an etchant such as hydrochloric acid and etching.
そしてアルカリ水溶液などにより、硬化したフォトレジ
ストを除去することにより、所定のくし歯パターンに透
明電極１１が形成された基板１が得られる。Then, by removing the hardened photoresist using an alkaline aqueous solution or the like, a substrate 1 on which transparent electrodes 11 are formed in a predetermined comb pattern is obtained.
（第１工程）
上記基板１を高周波励起イオンプレーティング装置の基
板支持台に保持し、蒸発材料にＡｊｌｚＯ３を用いて第
１保護層を形成した。成膜条件としては、導入酸素分圧
３０ｍＰａ、基板湿度３００℃、高周波励起電力３００
Ｗとし、透明電極１１に正の直流２００ｖの電圧を印加
しながら、第１保護層が約２００ｎｍの膜厚となるまで
行なった。(First step) The substrate 1 was held on a substrate support of a high-frequency excited ion plating apparatus, and a first protective layer was formed using AjlzO3 as an evaporation material. The film forming conditions were: introduced oxygen partial pressure 30 mPa, substrate humidity 300°C, and high frequency excitation power 300.
W and applying a positive DC voltage of 200 V to the transparent electrode 11 until the first protective layer had a thickness of about 200 nm.
その時の基板１の模式的断面図を第３図に示す。A schematic cross-sectional view of the substrate 1 at that time is shown in FIG.
第１保護層２１は透明電極１１表面にはほとんど付着し
ておらず、基板本体１０の表出した表面１Ｑａに多く付
着している。The first protective layer 21 hardly adheres to the surface of the transparent electrode 11, and mostly adheres to the exposed surface 1Qa of the substrate body 10.
（第、２工程）
次に透明電極１１への電圧の印加を止めたこと以外は第
１工程と同様に、第１工程に連続してイオンプレーティ
ング法により第２保１１！１２２を約２００ｎｍの膜厚
となるまで成膜した。その時の状態を第１図に示す。第
２工程では、第２保護層２２は透明電極１１および第１
保Ｓ層２１表面に均一に付着している。(Second step) Next, in the same manner as the first step except that the voltage application to the transparent electrode 11 was stopped, the second electrode 11!122 was formed in a thickness of about 200 nm by the ion plating method following the first step. The film was formed to a film thickness of . The state at that time is shown in FIG. In the second step, the second protective layer 22 covers the transparent electrode 11 and the first protective layer 22.
It adheres uniformly to the surface of the S retaining layer 21.
１５ノられた雨センサでは、保護膜２表面は平滑であり
、透明電極１１のエツジ部１１ａも充分に保護されてい
る。従って充分な耐久性、強度を有するとともに、ワイ
パの撮動が防止される。In the rain sensor with 15 degrees of roughness, the surface of the protective film 2 is smooth, and the edge portion 11a of the transparent electrode 11 is also sufficiently protected. Therefore, it has sufficient durability and strength, and also prevents the wiper from moving.
第１図〜第３図は本発明の一実施例の保ａｌｌ膜形成方
法に関するものであり、第１図は形成された保護膜をも
つ雨センサの要部模式的断面図、第２図は基板の要部模
式的断面図、第３図は第１工程が終了した時点における
雨センサの要部模式的断面図である。第４図は従来の雨
センサの要部模式的断面図である。
１・・・基板 ２・・・保護膜 １０・・・基板本
体１１・・・透明電極 ２１・・・第１保
ＷＩ層２２・・・第２保護層
特許出願人 トヨタ自動車株式会社
代理人 弁理士 大川 宏1 to 3 relate to a method for forming a protective all film according to an embodiment of the present invention. FIG. 3 is a schematic sectional view of the main part of the substrate, and FIG. 3 is a schematic sectional view of the main part of the rain sensor at the time when the first step is completed. FIG. 4 is a schematic cross-sectional view of the main parts of a conventional rain sensor. 1...Substrate 2...Protective film 10...Substrate body 11...Transparent electrode 21...First protective layer 22...Second protective layer Patent applicant Toyota Motor Corporation representative Patent attorney Hiroshi Okawa
Claims (2)
護膜を形成する方法であつて、 該電極に正の電圧を印加した状態でイオンプレーティン
グ法により該基板表面に第１保護層を形成する第１工程
と、 該電極に電圧を印加しない状態で該第１保護層が形成さ
れた該基板表面に第２保護層を形成する第２工程と、を
順に行うことを特徴とする保護膜形成方法。(1) A method of forming an insulating protective film on the surface of a substrate on which an electrode is partially formed, the first protective film being applied to the surface of the substrate by ion plating while applying a positive voltage to the electrode. A first step of forming a layer and a second step of forming a second protective layer on the surface of the substrate on which the first protective layer is formed without applying a voltage to the electrode are performed in order. A method for forming a protective film.
５００Ｖである特許請求の範囲第１項記載の保護膜形成
方法。(2) The voltage applied to the electrode in the first step is DC 100~
The protective film forming method according to claim 1, wherein the voltage is 500V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29015087A JPH01131443A (en) | 1987-11-17 | 1987-11-17 | Formation of protective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29015087A JPH01131443A (en) | 1987-11-17 | 1987-11-17 | Formation of protective film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01131443A true JPH01131443A (en) | 1989-05-24 |
Family
ID=17752424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29015087A Pending JPH01131443A (en) | 1987-11-17 | 1987-11-17 | Formation of protective film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01131443A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011504442A (en) * | 2007-10-17 | 2011-02-10 | ピルキントン グループ リミテッド | Glazing |
| WO2013030930A1 (en) * | 2011-08-29 | 2013-03-07 | トヨタ自動車株式会社 | Microparticle sensor and method for manufacturing microparticle sensor |
| WO2015041007A1 (en) * | 2013-09-20 | 2015-03-26 | 並木精密宝石株式会社 | Substrate and method for manufacturing same, light-emitting element and method for manufacturing same, and device having substrate or light-emitting element |
-
1987
- 1987-11-17 JP JP29015087A patent/JPH01131443A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011504442A (en) * | 2007-10-17 | 2011-02-10 | ピルキントン グループ リミテッド | Glazing |
| WO2013030930A1 (en) * | 2011-08-29 | 2013-03-07 | トヨタ自動車株式会社 | Microparticle sensor and method for manufacturing microparticle sensor |
| JPWO2013030930A1 (en) * | 2011-08-29 | 2015-03-23 | トヨタ自動車株式会社 | Fine particle sensor and method for producing fine particle sensor |
| US9523632B2 (en) | 2011-08-29 | 2016-12-20 | Toyota Jidosha Kabushiki Kaisha | Particulate matter sensor and method for manufacturing particulate matter sensor |
| WO2015041007A1 (en) * | 2013-09-20 | 2015-03-26 | 並木精密宝石株式会社 | Substrate and method for manufacturing same, light-emitting element and method for manufacturing same, and device having substrate or light-emitting element |
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