JPH01128606A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

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Publication number
JPH01128606A
JPH01128606A JP28533887A JP28533887A JPH01128606A JP H01128606 A JPH01128606 A JP H01128606A JP 28533887 A JP28533887 A JP 28533887A JP 28533887 A JP28533887 A JP 28533887A JP H01128606 A JPH01128606 A JP H01128606A
Authority
JP
Japan
Prior art keywords
electrode
surface acoustic
acoustic wave
common
wave device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28533887A
Other languages
Japanese (ja)
Other versions
JP2590347B2 (en
Inventor
Takashi Shiba
隆司 芝
Yuji Fujita
勇次 藤田
Toshimitsu Takahashi
利光 高橋
Jun Yamada
純 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62285338A priority Critical patent/JP2590347B2/en
Priority to US07/267,294 priority patent/US4918349A/en
Priority to DE3838383A priority patent/DE3838383A1/en
Publication of JPH01128606A publication Critical patent/JPH01128606A/en
Application granted granted Critical
Publication of JP2590347B2 publication Critical patent/JP2590347B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To enough suppress an MEL by arranging a crossing width weighting electrode finger with unequal pitch in a different polarity area between second common electrodes and executing electrode arrangement to suppress a reflected wave near a central frequency in the area between same polarity first and second common electrodes. CONSTITUTION:On a surface acoustic wave substrate 1, an input cord shape electrode 2 and an output interdigital electrode 3 are arranged and in the output cord shape electrode 3, a first common electrode 4 and a second common electrode 5 are provided. Then, in an area 6 between the both common electrodes, the electrode finger, whose width is 1/8 of a surface acoustic wave length (lambda0) of the central frequency, is arranged in an equal interval with the pitch of lambda0/4. In an inside area 7 of the second common electrode 5, the electrode is arranged with the unequal pitch in order to obtain an unsymmetrical frequency characteristic. Thus, even in case of the unequal pitch electrode finger arrangement to have the unsymmetrical frequency characteristic, since the MEL (reflection due to the difference of the characteristic impedance of medium quality) can be enough suppressed, a ripple, etc., in a band can be suppressed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、反射波を良く抑圧した、周波数特性上のリッ
プルが少ない弾性表面波装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a surface acoustic wave device that suppresses reflected waves well and has few ripples in frequency characteristics.

〔従来の技術〕[Conventional technology]

従来の交差幅重み付電極では、電極の有る部分と無い部
分の弾性表面波伝搬に関する特性インピーダンスの相違
によシ生ずる反射波(以後にΣLと略称)を、米国電気
電子学会論文誌エムティーティーM’!”1’−22、
(1974年)、第960〜964頁に述べられている
ように1電極指幅を、帯域中心周波数の弾性表面波波長
(λ0)の178にして抑圧する方法が知られている〇 〔発明が解決しようとする問題点3 周波数特性が帯域中心周波数に対して対称な場合は、電
極ピッチは一定となシ、上記従来の手法は有効である。
In conventional cross-width weighted electrodes, the reflected waves (hereinafter abbreviated as ΣL) caused by the difference in characteristic impedance regarding surface acoustic wave propagation between the part with the electrode and the part without the electrode are '! "1'-22,
(1974), pp. 960-964, there is a known method of suppression by setting the width of one electrode finger to 178 of the surface acoustic wave wavelength (λ0) of the band center frequency. Problem 3 to be Solved If the frequency characteristics are symmetrical with respect to the band center frequency, the electrode pitch is constant, and the above conventional method is effective.

また、周波数特性が非対称で電極ピッチが一定でない場
合も、励振源位置(インパルス発生位置)の間隔をλo
/4とすることで、かな、i9MILを抑圧できるが、
まだ充分ではない。
Also, if the frequency characteristics are asymmetric and the electrode pitch is not constant, the interval between the excitation source positions (impulse generation positions) should be adjusted to λo.
By setting it to /4, i9MIL can be suppressed, but
It's still not enough.

本発明は、上記MELを更に良く抑圧した弾性表面波装
置を提供することを目的とする。
An object of the present invention is to provide a surface acoustic wave device that suppresses the above-mentioned MEL even better.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決するために本発明においては、不等ピ
ッチ交差幅重み付電極の同極性電極指端部を連ねる直線
状の第1共通電極(バスバー)の他に、同極性電極指の
交差部分に近い位t(重み付文差部の包結線と第1共通
電極の間)を連ねる第2共通電極を設け、異極性第2共
通電極間領域では、不等ピッチで交差幅重み付電極指を
配列し、同極性の第1.第2共通電極間の領域(互いK
A極性の上、下領域がある)では、中心周波数近傍で反
射波を充分抑圧するように、上記のような公知技術(例
えばλo/8幅の電極指をλo / 4間隔で配列する
、或いは上部領域の電極指存在位置に下部領域の電極指
間の間隙が対応して存在する、等)を含む電極指(但し
其の両端例れもが夫々第1゜第2共通電極に接続された
格子状)配列を行った。
In order to solve the above-mentioned problems, in the present invention, in addition to a linear first common electrode (bus bar) connecting the end portions of electrode fingers of the same polarity of the unequal pitch crossing width weighted electrodes, A second common electrode is provided that connects t (between the wrapping line of the weighted difference part and the first common electrode) close to the part, and in the region between the second common electrodes of different polarity, the cross width weighted electrodes are arranged at uneven pitches. Arrange your fingers and place the first one of the same polarity. The area between the second common electrodes (each other K
In order to sufficiently suppress the reflected waves near the center frequency (with upper and lower regions of A polarity), the above-mentioned known techniques (for example, arranging electrode fingers with a width of λo/8 at intervals of λo/4, or There is a gap between electrode fingers in the lower region corresponding to the position of the electrode fingers in the upper region, etc.) (provided that both ends thereof are connected to the first and second common electrodes, respectively). A grid-like) array was performed.

〔作用〕[Effect]

上記手段をとれば、第1.第2共通電極間の反射波は充
分抑圧されているために、反射波は、事実上、残された
電極部分だけのものとなシ、尤の反射波のインパルスレ
スポンスにウィンドウ(窓関数)をかけたものとなって
、全体のレベルを下げ得ることを本発明者等は発見し九
〇ここで、第1、第2共通電極間に電極を残したのは、
その部分での表面波の伝搬速度(位相)を中心部分と同
様にするためである。
If you take the above measures, 1. Since the reflected wave between the second common electrodes is sufficiently suppressed, the reflected wave is actually only for the remaining electrode portion, and a window (window function) is applied to the impulse response of the reflected wave. The inventors of the present invention discovered that the overall level could be lowered by multiplying the
This is to make the propagation velocity (phase) of the surface waves in that part similar to that in the central part.

〔実施例〕〔Example〕

以下、本発明を図面によりて更に詳細に説明する。 Hereinafter, the present invention will be explained in more detail with reference to the drawings.

第1図は本発明第1実施例を模式的に示す図である。弾
性表面波基板1上に入力すだれ状電極2、出力すだれ状
電極3が配置され、出力すだれ状電極3には、第1共通
電極4と第2共通電極5が設けられ、両共通電極間の領
域6には中心周波数の弾性表面波波長(4)の1/8の
幅の電極指をλ0/4のピッチで等間隔に配置しである
。なお、第2共通電極は余弦形状とした(:2サイン形
のウィンドウがかかつていることに相当する)0第2共
通電極5の内側の領域7では、非対称周波数特性を得る
ために不等ピッチで電極が配置されている〇破@Sは其
の交差部包絡線を示している。入出力すだれ状電極2.
3の両側には弾性表面波の基板端面での反射を防止する
ため吸音剤9が塗布されている。基板は128度回転Y
軸切断、X軸伝搬のL1Nb03で、入力すだれ状電極
2の励振源対数は15対、入力側開口長3000μm1
出力すだれ状電極3の励振源(第2共通電極間)対数は
50対、出力側最大開口長2000μmである・テレビ
ジ冒ン受信機の中間周波フィルタ用で中心周波数5瓜5
 MHzでおる。第2図は、本実施例と同用途の従来の
弾性光面波装置の例(参考例)を模式的に示す図である
FIG. 1 is a diagram schematically showing a first embodiment of the present invention. An input interdigital electrode 2 and an output interdigital electrode 3 are arranged on the surface acoustic wave substrate 1, and the output interdigital electrode 3 is provided with a first common electrode 4 and a second common electrode 5. In region 6, electrode fingers having a width of 1/8 of the surface acoustic wave wavelength (4) of the center frequency are arranged at equal intervals with a pitch of λ0/4. Note that the second common electrode has a cosine shape (equivalent to having a two-sine window).The inner region 7 of the second common electrode 5 has an unequal pitch in order to obtain asymmetric frequency characteristics. The 〇 broken @S where the electrodes are arranged shows the envelope of the intersection. Input/output interdigital electrodes 2.
A sound absorbing material 9 is coated on both sides of the substrate 3 to prevent surface acoustic waves from being reflected at the end faces of the substrate. The board is rotated 128 degrees Y
Axis cutting, X-axis propagation L1Nb03, number of excitation source pairs of input interdigital electrode 2 is 15, input side aperture length 3000 μm1
The number of pairs of excitation sources (between the second common electrodes) of the output interdigital electrode 3 is 50 pairs, and the maximum aperture length on the output side is 2000 μm.The center frequency is 5.5 μm for the intermediate frequency filter of a television receiver.
It's MHz. FIG. 2 is a diagram schematically showing an example (reference example) of a conventional elastic optical surface wave device for the same purpose as this embodiment.

図中の符号は第1図の場合と同じで、基板、励振源対数
、開口長等も第1実施例と同様である。
The symbols in the figure are the same as those in FIG. 1, and the substrate, excitation source logarithm, aperture length, etc. are also the same as in the first embodiment.

第3図は本装置を用いたテレビジlンの中間周波回路を
示す・チェーナ10に本弾性表面波装置11を接続し、
1チヤンネルの抽出と、映像帯域、音声信号レベルの設
定を行っている。出力は変圧器12を介してプリアンプ
、復調等の機能を有する集積回路13に接続されている
。従来はチ為−すの出力部でマツチングをとるため、ダ
ンピング用の抵抗14が接続されていたが、本発明装置
を用いるシステムでは、低損失化のため、弾性表面波装
置のインピーダンスを下げ、抵抗14を取シ外すことに
した。従って弾性表面波装置11の入力側は、はぼマツ
チングに近い状態となシ、電極の負荷条件によって定ま
る反射波(RW)は10(LB程度であった。
FIG. 3 shows an intermediate frequency circuit of a television television using this device.The surface acoustic wave device 11 is connected to the chainer 10,
It extracts one channel and sets the video band and audio signal level. The output is connected via a transformer 12 to an integrated circuit 13 having functions such as preamplification and demodulation. Conventionally, a damping resistor 14 was connected in order to perform matching at the output section of the chip, but in a system using the device of the present invention, the impedance of the surface acoustic wave device is lowered to reduce loss. I decided to remove the resistor 14. Therefore, the input side of the surface acoustic wave device 11 was in a state close to matching, and the reflected wave (RW) determined by the load conditions of the electrodes was about 10 (LB).

一方、従来の弾性表面波装置(参考例)を用い、出力側
のミスマツチを充分に行い、反射波を抑圧しようと試み
たところ、前述のMBL分によシ、電極間を多重反射す
る波(TTI)を充分抑圧することが出来なかった〇 第4図は、参考例の出力すだれ状電極3による反射波(
MEIL)の損失を測定した結果を示す。
On the other hand, when using a conventional surface acoustic wave device (reference example) and attempting to sufficiently mismatch the output side to suppress the reflected waves, we found that due to the MBL described above, waves that were multiplely reflected between the electrodes ( Figure 4 shows the reflected wave () by the output interdigital electrode 3 of the reference example.
The results of measuring the loss of MEIL) are shown.

フィルタ帯域内で約23dB程度となった・入力側が1
0dBであるため、全体では35(LBとなる。第5図
は、参考例の挿入損失−周波数特性を示す。
Approximately 23 dB within the filter band - 1 on the input side
Since it is 0 dB, the total is 35 (LB). FIG. 5 shows the insertion loss-frequency characteristics of the reference example.

損失は18dBと良好であるが、帯域内に振幅α5dB
 p−p、群遅延100nsp−pのリップルを生じて
いる・これに対し、第6図は本発明第15j!施例の出
力すだれ状電極5の反射波(MEL)の損失を測定した
結果を示す。フィルタ帯域内で約27 (IBであシ、
全体では37(LBとなシ、40の改善効果があった。
The loss is good at 18 dB, but there is an amplitude α5 dB within the band.
p-p, a ripple with a group delay of 100 nsp-p is generated.In contrast, FIG. 6 shows the present invention No. 15j! The results of measuring the loss of reflected waves (MEL) of the output interdigital electrode 5 of the example are shown. Approximately 27 within the filter band (IB,
Overall, there was an improvement effect of 37 (LB and 40).

第7図は第1実施例フィルタの挿入損失−周波数特性を
示す@振幅リップルはα2 aap−p。
FIG. 7 shows the insertion loss-frequency characteristics of the filter of the first embodiment @amplitude ripple is α2 aap-p.

群遅延リップルは60nsp−pであ〕、良好な特性と
なりている。
The group delay ripple is 60 nsp-p], which is a good characteristic.

第8図は本発明第2実施例を模式的に示す図である・本
実施例では、入力側から離れた部分の包絡線8にそって
第2共通電極5を設置し九。第9図は第2実施例出力す
だれ状電極3の反射波損失−周波数特性を示す。帯域内
で約30 (LBの値が得られた・第2冥施例では第1
実施例に比べ、更に5(LB反射波を抑圧することが可
能である・第10図は本発明第3冥施例な模式的に示す
図である。本実施例では第2共通電極5は電極の前部で
も包絡線8に一致させている。第11図は出力すだれ状
!極5における反射波損失を示す。帯域内で約33αB
の値が得られ九〇本実施例では第3実施例に比べて更に
5dJ3の改善効果が得られた。
FIG. 8 is a diagram schematically showing a second embodiment of the present invention. In this embodiment, the second common electrode 5 is installed along the envelope 8 in a portion away from the input side. FIG. 9 shows the reflected wave loss-frequency characteristics of the output interdigital electrode 3 of the second embodiment. Approximately 30 (LB value was obtained within the band. In the second example, the first
Compared to the embodiment, it is possible to further suppress the LB reflected wave. FIG. 10 is a diagram schematically showing the third embodiment of the present invention. In this embodiment, the second common electrode 5 is The front part of the electrode is also made to match the envelope 8. Figure 11 shows the reflected wave loss at the output interdigital pole 5. Approximately 33αB within the band
A value of 90 was obtained, and an improvement effect of 5 dJ3 was obtained in this embodiment compared to the third embodiment.

第12図は本発明第4実施例を模式的に示す図である0
出力すだれ状電極として一方向性電極15を用いて、−
層低損失化を行っている。一方向性電極15はミアンダ
電極16を用いたグループ屋一方向性電極である0本実
施例でも、第2共通電極5を設けてMBL分を抑圧して
いる。本実施例を用いれば、不等ピッチ型一方向性電極
のように、MEIL分が出易い構造でもMEILを抑圧
することが可能である。
FIG. 12 is a diagram schematically showing the fourth embodiment of the present invention.
Using the unidirectional electrode 15 as the output interdigital electrode, -
The layer loss is reduced. Even in this embodiment, where the unidirectional electrode 15 is a grouped unidirectional electrode using a meandering electrode 16, the second common electrode 5 is provided to suppress the MBL component. By using this embodiment, it is possible to suppress MEIL even in a structure where MEIL is likely to occur, such as an uneven pitch type unidirectional electrode.

第13図は本発明第5実施例の部分拡大図である・本実
施例では、第1.第2共通電極に挾まれた領域6にλ。
FIG. 13 is a partially enlarged view of the fifth embodiment of the present invention. In this embodiment, the first. λ in the region 6 sandwiched between the second common electrodes.

/4電極を用いたものである・出力すだれ状電極3の入
力すだれ状電極側の上部領域拡大図を17、下部領域拡
大図を18、反対側の上部領域拡大図を19、下部領域
拡大図を20で示しているO  Aそれぞれの位置で、
上部の反射波と下部の反射波は逆相となシ打消し合う◎
残シの上部左端、下部右端から発生する反射波も中心周
波数近傍で相殺される。本実施例を用いると、領域6か
らの反射波がフィルタ帯域内で殆ど零になる丸め、−層
良好な反射波抑圧効果を得ることができ、かつ、電極幅
を広くすることが出来るため、製造歩留)向上に効果が
ある。なお、ここではλ。74幅の電極指を用いたもの
を示したが、上部と下部の電極エツジが逆相となるよう
に配置すれば、電極指幅は任意(例えば−0/8)とす
ることが出来ることは云うまでもない。
・An enlarged view of the upper area on the input interdigital electrode side of the output interdigital electrode 3 is shown at 17, an enlarged view of the lower area is shown at 18, an enlarged view of the upper area on the opposite side is shown at 19, and an enlarged view of the lower area is shown. At each position of OA indicated by 20,
The upper reflected wave and the lower reflected wave are in opposite phase and cancel each other out◎
The reflected waves generated from the upper left end and the lower right end of the remaining part are also canceled out near the center frequency. By using this embodiment, it is possible to obtain a rounding effect in which the reflected wave from the region 6 becomes almost zero within the filter band, and a good reflected wave suppression effect can be obtained, and the electrode width can be widened. It is effective in improving manufacturing yield. In addition, here it is λ. Although we have shown an example using electrode fingers with a width of 74, it is possible to set the electrode finger width to any desired width (eg -0/8) if the upper and lower electrode edges are arranged in opposite phases. Needless to say.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、非対称周波数特性
を有する不等ピッチ電極指配置の場合でも、MBL(媒
質の特性インピーダンスの違いによる反射)を充分に抑
圧することが出来るため、帯域内リップル等を抑えるこ
とができ、フィルタ特性の向上に効果があるO
As explained above, according to the present invention, even in the case of an uneven pitch electrode finger arrangement having asymmetric frequency characteristics, it is possible to sufficiently suppress MBL (reflection due to a difference in characteristic impedance of the medium), so that in-band ripples can be suppressed. etc., and is effective in improving filter characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明第1実施例を模式的に示す図、第2図は
従来の弾性表面波装置の例(参考例)を模式的に示す図
、第5因は本装置を用いたテレビジ冒ンの中間周波u路
を示す図、第4図は参考側出力すだれ状電極による反射
波損失の周波数特性図、第5因は参考例の挿入損失の周
波数特性図、第6図は本発明第1!ii!施例出力すだ
れ状電極の反射波損失の周波数特性図、第7図は第1実
施例フィルタ挿入損失の周波数特性図、第8図は本発明
第2実施例を模式的に示す図、第9図は第2実施例出力
すだれ状電極の反射波損失の周波数特性図、第10図は
本発明第3実施例を模式的に示す図、第11図は第3冥
施例出力すだれ状電極の反射波損失の周波数特性図、第
12図は本発明第4実施例を模式的に示す図、第13図
は本発明第5実施例の部分拡大図である。 1・・・弾性表面波基板、2・・・入力すだれ状電極、
3・・・出力すだれ状電極、4・・・第1共通電極、5
・・・第2共通電極、6・・・両系通電極間の領域、7
・・・第2共通電極の内側の領域、8・・・交差部の包
絡線、9・・・吸音剤、10・・・チェーナ、11・・
・弾性表面波装置、15・・・集積回路、15・・・一
方向性電極、16・・・ミアンダ電極〇
Fig. 1 is a diagram schematically showing the first embodiment of the present invention, Fig. 2 is a diagram schematically showing an example of a conventional surface acoustic wave device (reference example), and the fifth factor is the TV screen using this device. Figure 4 is a frequency characteristic diagram of the reflected wave loss due to the output interdigital electrode on the reference side, the fifth factor is a frequency characteristic diagram of the insertion loss of the reference example, and Figure 6 is the frequency characteristic diagram of the insertion loss of the reference example. 1st! ii! FIG. 7 is a frequency characteristic diagram of the reflected wave loss of the output interdigital electrode of the embodiment. FIG. 7 is a frequency characteristic diagram of the filter insertion loss of the first embodiment. FIG. 8 is a diagram schematically showing the second embodiment of the present invention. The figure is a frequency characteristic diagram of reflected wave loss of the output interdigital electrode of the second embodiment, FIG. 10 is a diagram schematically showing the third embodiment of the present invention, and FIG. 11 is the frequency characteristic diagram of the output interdigital electrode of the third embodiment. A frequency characteristic diagram of reflected wave loss, FIG. 12 is a diagram schematically showing the fourth embodiment of the present invention, and FIG. 13 is a partially enlarged view of the fifth embodiment of the present invention. 1...Surface acoustic wave substrate, 2...Input interdigital electrode,
3... Output interdigital electrode, 4... First common electrode, 5
...Second common electrode, 6...Region between both system conductive electrodes, 7
. . . Inner region of second common electrode, 8. Envelope of intersection, 9. Sound absorbing material, 10. Chena, 11.
・Surface acoustic wave device, 15...Integrated circuit, 15...Unidirectional electrode, 16...Meander electrode〇

Claims (5)

【特許請求の範囲】[Claims] 1.弾性表面波基板上に入、出力すだれ状電極を配列し
、少なくとも一方のすだれ状電極を、電極指交差幅と電
極指ピッチに変化のある不等ピッチ交差幅重み付電極と
した弾性表面波装置において、上記不等ピッチ交差幅重
み付電極の同極性電極指端部を連ねる直線状の第1共通
電極の他に、同極性電極指の交差部分に近い位置を連ね
る第2共通電極を設け、異極性第2共通電極間領域では
、不等ピッチで交差幅重み付電極指を配列し、同極性の
第1,第2共通電極間の領域では、中心周波数近傍で反
射波を充分抑圧する公知技術を含む電極指配列を行った
ことを特徴とする弾性表面波装置。
1. A surface acoustic wave device that is mounted on a surface acoustic wave substrate, has output interdigital electrodes arranged, and has at least one interdigitated electrode as an unequal pitch intersecting width weighted electrode with changes in electrode finger intersecting width and electrode finger pitch. In addition to the linear first common electrode that connects the ends of the electrode fingers of the same polarity of the unequal pitch crossing width weighted electrodes, a second common electrode is provided that connects the ends of the electrode fingers of the same polarity near the intersections, In the region between the second common electrodes of different polarities, cross-width weighted electrode fingers are arranged at unequal pitches, and in the region between the first and second common electrodes of the same polarity, a well-known method that sufficiently suppresses reflected waves near the center frequency is used. A surface acoustic wave device characterized by having an electrode finger arrangement including a technique.
2.上記不等ピッチ交差幅重み付電極の第2共通電極が
、電極指交差部包絡線に沿って形成した部分を有するこ
とを特徴とする特許請求の範囲第1項記載の弾性表面波
装置。
2. 2. The surface acoustic wave device according to claim 1, wherein the second common electrode of the unequal pitch crossing width weighted electrode has a portion formed along the electrode finger crossing envelope.
3.上記不等ピッチ交差幅重み付電極の第1,第2共通
電極間領域の電極指幅を、フィルタ特性中心周算数の弾
性表面波波長の1/8とし、電極指ピッチを上記波長の
1/4としたことを特徴とする特許請求の範囲第1項記
載の弾性表面波装置。
3. The electrode finger width of the region between the first and second common electrodes of the unequal pitch cross width weighted electrode is set to 1/8 of the surface acoustic wave wavelength of the filter characteristic center frequency, and the electrode finger pitch is set to 1/8 of the above wavelength. 4. The surface acoustic wave device according to claim 1, wherein the surface acoustic wave device is characterized in that:
4.上記不等ピッチ交差幅重み付電極の第1,第2共通
電極間の、互いに異極性の上部領域と下部領域の弾性表
面波伝搬方向電極指配列を、一方の領域の電極指存在位
置に他方の領域の電極指間の間隙が対応して存在するよ
うにしたことを特徴とする特許請求の範囲第1項記載の
弾性表面波装置。
4. The electrode finger arrangement in the surface acoustic wave propagation direction of the upper region and lower region of mutually different polarity between the first and second common electrodes of the above-mentioned unequal pitch cross width weighted electrode is arranged at the position where the electrode fingers exist in one region and the other. 2. The surface acoustic wave device according to claim 1, wherein gaps between the electrode fingers in the region are arranged to correspond to each other.
5.上記不等ピッチ交差幅重み付電極がグループ型一方
向性電極であることを特徴とする特許請求の範囲第1項
記載の弾性表面波装置。
5. 2. The surface acoustic wave device according to claim 1, wherein said unequal pitch cross width weighted electrode is a group type unidirectional electrode.
JP62285338A 1987-11-13 1987-11-13 Surface acoustic wave device Expired - Lifetime JP2590347B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62285338A JP2590347B2 (en) 1987-11-13 1987-11-13 Surface acoustic wave device
US07/267,294 US4918349A (en) 1987-11-13 1988-11-04 Surface acoustic wave device having apodized transducer provided with irregular pitch electrode group
DE3838383A DE3838383A1 (en) 1987-11-13 1988-11-11 DEVICE FOR ACOUSTIC SURFACE WAVES WITH OVERLAP-WEIGHTED CONVERTER PROVIDED WITH A GROUP OF ELECTRODES WITH IRREGULAR SPACING

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62285338A JP2590347B2 (en) 1987-11-13 1987-11-13 Surface acoustic wave device

Publications (2)

Publication Number Publication Date
JPH01128606A true JPH01128606A (en) 1989-05-22
JP2590347B2 JP2590347B2 (en) 1997-03-12

Family

ID=17690259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62285338A Expired - Lifetime JP2590347B2 (en) 1987-11-13 1987-11-13 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JP2590347B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218786A (en) * 1992-01-31 1993-08-27 Sanyo Electric Co Ltd Surface acoustic wave device
CN102437830A (en) * 2010-09-17 2012-05-02 日本电波工业株式会社 Elastic wave device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745089A (en) * 1980-09-01 1982-03-13 Nippon Seiko Kk Formation of dynamic pressure-generating groove in shaft
JPS5976131U (en) * 1982-11-12 1984-05-23 沖電気工業株式会社 Surface acoustic wave “ro” wave device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745089A (en) * 1980-09-01 1982-03-13 Nippon Seiko Kk Formation of dynamic pressure-generating groove in shaft
JPS5976131U (en) * 1982-11-12 1984-05-23 沖電気工業株式会社 Surface acoustic wave “ro” wave device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218786A (en) * 1992-01-31 1993-08-27 Sanyo Electric Co Ltd Surface acoustic wave device
CN102437830A (en) * 2010-09-17 2012-05-02 日本电波工业株式会社 Elastic wave device

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