JPH01125787A - Protection film for thin film solid-state element - Google Patents
Protection film for thin film solid-state elementInfo
- Publication number
- JPH01125787A JPH01125787A JP62283267A JP28326787A JPH01125787A JP H01125787 A JPH01125787 A JP H01125787A JP 62283267 A JP62283267 A JP 62283267A JP 28326787 A JP28326787 A JP 28326787A JP H01125787 A JPH01125787 A JP H01125787A
- Authority
- JP
- Japan
- Prior art keywords
- protection film
- film
- ion
- high molecular
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 title claims description 22
- 239000010409 thin film Substances 0.000 title claims description 3
- 230000001681 protective effect Effects 0.000 claims description 12
- 239000002952 polymeric resin Substances 0.000 claims description 8
- 229920003002 synthetic resin Polymers 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 abstract description 9
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000009719 polyimide resin Substances 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract 4
- 229920005989 resin Polymers 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- -1 for example Polymers 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 5
- 230000035699 permeability Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 230000001055 chewing effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001814 effect on stress Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気バブルメモリあるいはＬＳＩ等の薄膜固体
素子に係り、特に信頼性に優れかつストレスの小さい保
護膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to thin film solid-state devices such as magnetic bubble memories or LSIs, and particularly relates to a protective film that is highly reliable and has low stress.
従来、磁気バブルメモリあるいは５ｉＬＳＩにおいて保
護膜にはスパッタ法による５ｉＯｘｔプラズマＣＶＤ法
による５ｉｓＮａ等の無機膜、あるいはポリイミド管の
高分子樹脂膜が用いられていた。これらが用いられてい
る主な理由は前者が機械的強度が強くかつ水分に対する
透過性が小さい高信頼度の膜であること、また後者はス
トレスが小さくストレスの素子に及ぼす影響がほとんど
ないことによる。しかし、これらの特性はそれぞれの材
料単独で満足することはできない。Conventionally, in a magnetic bubble memory or 5iLSI, an inorganic film such as 5isNa film formed by a 5iOxt plasma CVD method using a sputtering method, or a polymer resin film of a polyimide tube has been used as a protective film. The main reason why these are used is that the former is a highly reliable membrane with strong mechanical strength and low moisture permeability, and the latter has low stress and has almost no effect on stress elements. . However, these characteristics cannot be satisfied by each material alone.
すなわち、上記従来技術において５ｉｆｔ。 That is, in the above conventional technology, 5ift.
５ｉａＮａ等の無機膜ではストレスが大きく、素子が高
密度になる程、そのストレスの影響が問題となってくる
。また、ポリイミド等の高分子樹脂膜では機械的強度が
弱くかつ水分に対する透過性が大きいため信頼性が問題
となる。An inorganic film such as 5iaNa has a large stress, and the higher the density of the device, the more the effect of the stress becomes a problem. Furthermore, since a polymer resin film such as polyimide has low mechanical strength and high permeability to moisture, reliability becomes a problem.
本発明の目的は低ストレスでかつ高信頼度の保護膜を提
供することにある。An object of the present invention is to provide a protective film with low stress and high reliability.
上記目的は、保護膜として高分子樹脂を用い、かつその
表館近傍にイオンを打込むことにより達成される。The above object is achieved by using a polymer resin as a protective film and implanting ions into the vicinity of the front panel.
イオンを打込まれた高分子樹脂は分子中の弱い結合が破
壊され、炭素と炭素の結合が網目状に形成されたグラフ
ァイト状の構造となる。このため、通常の高分子より機
械的強度は著しく増大し、かつ水分に対する透過性は減
少する。一方、イオンを打込まれた領域以外では、高分
子樹脂の性質がそのまま生かされるためストレスは小さ
い。The weak bonds in the molecules of the polymer resin implanted with ions are destroyed, resulting in a graphite-like structure with a network of carbon-carbon bonds. Therefore, the mechanical strength is significantly increased and the permeability to moisture is decreased compared to ordinary polymers. On the other hand, in areas other than the ion-implanted area, the stress is small because the properties of the polymer resin are utilized as they are.
このように本発明によれば低ストレスでかつ高信頼度の
保護膜を得ることができる。As described above, according to the present invention, a protective film with low stress and high reliability can be obtained.
実施例１
以下、本発明を磁気バブルメモリに適用した例を第１図
により説明する。バブルガーネット基板１の上にスパッ
タ法により５ｉＯｚ２（膜厚１０１００ｎを被着し、そ
の上にコンダクタパターン３（Ａｕ／Ｍｏ、膜厚３５０
ｎｍ）を形成する。次いでポリイミド膜４（膜厚３００
ｎｍ）を被着した後、パーマロイパターン５（膜厚３５
０ｎｍ）を形成する。しかる後、保護膜としてポリイミ
ド樹脂６を被着する。膜厚は２μｍとし、塗布後１５０
℃のベークを行い、さらに、真空中で３５０℃のベーク
を行う。かじる後ポリイミド表面にイオンを打込む。イ
オン種はＨとし、加速電圧１５０ｋｅＶ、 ドース量５
Ｘ１０”個／ｃｄ トした。Example 1 Hereinafter, an example in which the present invention is applied to a magnetic bubble memory will be explained with reference to FIG. 5iOz2 (film thickness: 10100 nm) is deposited on bubble garnet substrate 1 by sputtering, and conductor pattern 3 (Au/Mo, film thickness: 350 nm) is deposited on top of the bubble garnet substrate 1.
nm). Next, polyimide film 4 (thickness 300
After depositing permalloy pattern 5 (thickness: 35 nm)
0 nm). Thereafter, polyimide resin 6 is applied as a protective film. The film thickness is 2 μm, and the coating thickness is 150 μm.
C. baking is performed, and further baking is performed at 350.degree. C. in vacuum. After chewing, ions are implanted into the polyimide surface. The ion species is H, the acceleration voltage is 150 keV, and the dose is 5.
X10” pieces/cd.
このイオン打込みによりイオン打込み層７が形成される
０次いでスルーホールを開けた後ポンディングパッド８
（ＡＱ、膜厚１μｍ）を形成する。Through this ion implantation, an ion implantation layer 7 is formed.Next, after a through hole is opened, a bonding pad 8 is formed.
(AQ, film thickness 1 μm) is formed.
実施例２
先の実施例においてはポンディングパッド形成前にイオ
ン打込みを行った。しかし、この構成では、多量にイオ
ンを打込んだ場合、ポンディングパッドと保護膜との接
着性が低下する可能性がある。特に第２図に示すように
ポンディングパッド８と同層に上乗せ配線８′を形成す
る場合、この配線と保護膜との接着性は特に重要である
。このため１本実施例ではイオン打込みをポンディング
パッド形成後に行なう。すなわち、ポリイミド膜６を形
成した後、スルホールおよびポンディングパッド８、上
乗せ配線８′を形成し、しかる後イオン打込みを行う。Example 2 In the previous example, ion implantation was performed before forming the bonding pad. However, with this configuration, when a large amount of ions are implanted, the adhesion between the bonding pad and the protective film may deteriorate. In particular, when an overlying wiring 8' is formed in the same layer as the bonding pad 8 as shown in FIG. 2, the adhesion between the wiring and the protective film is particularly important. For this reason, in this embodiment, ion implantation is performed after the bonding pad is formed. That is, after forming the polyimide film 6, through holes, bonding pads 8, and overlay wiring 8' are formed, and then ion implantation is performed.
この方法によればポンディングパッド８および上乗せ配
ｍ８′の直下にはイオンは打込まれない。このためポン
ディングパッド８および上乗せ配線８′と保護膜との接
着性は良好に保たれる。According to this method, ions are not implanted directly under the bonding pad 8 and the overlay m8'. Therefore, good adhesion between the bonding pad 8 and the overlying wiring 8' and the protective film is maintained.
本発明によれば、保護膜のストレスは高分子樹脂と同等
の小さい値となる。このためＳｉＯ２゜Ｓｉ３Ｎ＋等の
保護膜で問題となるス１〜レスは、本発明では問題とな
らない。また、本発明において高分子樹脂の表面はイオ
ン打込みにより改質され、機械的強度が増大し、かつ水
分の透過性は減少する。このため、ＳｉＯ２，５１ｇ０
４を用いた時と同等の高い信頼性が得られる。According to the present invention, the stress of the protective film is as small as that of a polymer resin. Therefore, the scratches, which are a problem with protective films such as SiO2°Si3N+, do not pose a problem in the present invention. Furthermore, in the present invention, the surface of the polymer resin is modified by ion implantation to increase mechanical strength and reduce moisture permeability. For this reason, SiO2,51g0
The same high reliability as when using 4 is obtained.
第１図は本発明の一実施例の断面図、第２図は本発明の
他の実施例の断面図である。
１・・・パブルガーネツ１−１２・・・ＳｉＯ２，３・
・・コンダクタパターン、４・・・ポリイミド、５・・
・パーマロイパターン、６・・・ポリイミド、７・・・
イオン打込み層、８・・・ポンディングパッド、８′・
・・上乗せ配線。FIG. 1 is a sectional view of one embodiment of the invention, and FIG. 2 is a sectional view of another embodiment of the invention. 1...Pubble Garnets 1-12...SiO2,3.
...Conductor pattern, 4...Polyimide, 5...
・Permalloy pattern, 6...polyimide, 7...
Ion implantation layer, 8...Pounding pad, 8'.
・Additional wiring.
Claims (1)
込んだことを特徴とする薄膜固体素子用保護膜。1. A thin film protective film for solid-state devices characterized by using a polymer resin and having ions implanted near its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283267A JPH01125787A (en) | 1987-11-11 | 1987-11-11 | Protection film for thin film solid-state element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283267A JPH01125787A (en) | 1987-11-11 | 1987-11-11 | Protection film for thin film solid-state element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01125787A true JPH01125787A (en) | 1989-05-18 |
Family
ID=17663243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62283267A Pending JPH01125787A (en) | 1987-11-11 | 1987-11-11 | Protection film for thin film solid-state element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01125787A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1091115C (en) * | 1999-06-11 | 2002-09-18 | 中国科学院化学研究所 | Composite nanometer-level polyamide/graphite material and its preparation |
-
1987
- 1987-11-11 JP JP62283267A patent/JPH01125787A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1091115C (en) * | 1999-06-11 | 2002-09-18 | 中国科学院化学研究所 | Composite nanometer-level polyamide/graphite material and its preparation |
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