JPH01123616A - Washing tower - Google Patents
Washing towerInfo
- Publication number
- JPH01123616A JPH01123616A JP62280491A JP28049187A JPH01123616A JP H01123616 A JPH01123616 A JP H01123616A JP 62280491 A JP62280491 A JP 62280491A JP 28049187 A JP28049187 A JP 28049187A JP H01123616 A JPH01123616 A JP H01123616A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- scrubbing
- exhaust gas
- tower
- chambers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005406 washing Methods 0.000 title description 6
- 239000007788 liquid Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims description 94
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 abstract description 51
- 238000005201 scrubbing Methods 0.000 abstract description 15
- 238000004880 explosion Methods 0.000 abstract description 8
- 238000002485 combustion reaction Methods 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010790 dilution Methods 0.000 abstract description 4
- 239000012895 dilution Substances 0.000 abstract description 4
- 239000002912 waste gas Substances 0.000 abstract 7
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000001784 detoxification Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003546 flue gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 diborane Chemical compound 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、複数台の半導体製造装置からそれぞれ別個に
排出される排ガスの除害を行う洗浄塔に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cleaning tower that removes harmful substances from exhaust gas discharged separately from a plurality of semiconductor manufacturing apparatuses.
プラズマケミカルベーパーデポジット（Ｐ−ＣＶＤ）等
の半導体製造装置から排出される排ガス中には、シラン
、ジボラン、アルシン、ホスフィン、ジクロルシラン、
トリクロルシラン等の有毒。The exhaust gas emitted from semiconductor manufacturing equipment such as plasma chemical vapor deposition (P-CVD) contains silane, diborane, arsine, phosphine, dichlorosilane,
Toxic substances such as trichlorosilane.
自燃性のガスが含まれているため、大気放出前に除去す
る必要がある。この除去手段として、気液接触を行う洗
浄塔内で上記シラン等を含む排ガスをアルカリ水溶液と
接触させ、アルカリ水溶液との反応及び化学吸着により
シラン等の濃度を許容濃度以下にまで除害して排気する
ものが知られている。Contains pyrophoric gases and must be removed before release into the atmosphere. As a means of removing this, the exhaust gas containing the silane, etc. is brought into contact with an alkaline aqueous solution in a cleaning tower that performs gas-liquid contact, and the concentration of the silane, etc. is reduced to below the permissible concentration by reaction with the alkaline aqueous solution and chemical adsorption. It is known what exhausts.
第４図及び第５図は、複数台の半導体製造装置から排出
される排ガスの除害処理を行う従来の洗浄塔を示すもの
である。FIGS. 4 and 5 show a conventional cleaning tower that performs detoxification treatment on exhaust gas discharged from a plurality of semiconductor manufacturing apparatuses.
洗浄塔１は、内部に充填された充填剤２の下方から排ガ
スＷを導入するとともに、上方から洗浄液Ｆを導入して
両者を充填剤２中で接触させ、排ガスＷ中の有害物質を
除去するもので、洗浄液Ｆは、所定量が洗浄塔１の底部
に貯留されてポンプ３により循環している。一方複数台
の半導体製造装置から排出された排ガスＷは、第４図に
示すように、ヘッダー管４で集合した後に洗浄塔１に導
入されるか、あるいは第５図に示すように、それぞれ独
立した配管５，５で洗浄塔１の下部に導入され、洗浄液
Ｆにより除害されて洗浄塔１の上部から排出される。The cleaning tower 1 introduces the exhaust gas W from below the filler 2 filled inside, and also introduces the cleaning liquid F from above to bring them into contact in the filler 2, thereby removing harmful substances in the exhaust gas W. A predetermined amount of the cleaning liquid F is stored at the bottom of the cleaning tower 1 and circulated by a pump 3. On the other hand, exhaust gases W discharged from multiple semiconductor manufacturing devices are either collected in a header pipe 4 and then introduced into the cleaning tower 1, as shown in FIG. 4, or are collected independently, as shown in FIG. The water is introduced into the lower part of the cleaning tower 1 through pipes 5, 5, which are removed by the cleaning liquid F, and discharged from the upper part of the cleaning tower 1.
しかしながら、上述のものでは、運転時間や使用ガスの
異なる複数台の半導体製造装置からの排ガスを洗浄前に
混合するため、ある装置で有毒性。However, in the above-mentioned method, exhaust gases from multiple semiconductor manufacturing equipment with different operating times and gas usage are mixed before cleaning, so some equipment may be toxic.
自燃性ガス（シランＳＬ ８４等）を使用中に、他の装
置からの空気あるいは酸素ガスを含むガスが導入すると
、両者の混合により燃焼、爆発の危険性がある。さらに
他の装置で水素ガスを使用している場合には、大爆発の
危険性も考慮しなければならない。このような危険を回
避するために、窒素ガス等の不活性ガスで排ガスを希釈
することが考えられているが、爆発下限界にまで希釈す
るには大量の不活性ガスが必要であり、また希釈により
排ガスの総置が増すため、極端に大きな洗浄塔が必要と
なる。If a gas containing air or oxygen gas from another device is introduced while a self-combustible gas (such as Silane SL 84) is in use, there is a risk of combustion or explosion due to the mixture of the two. Furthermore, if hydrogen gas is used in other equipment, the risk of a large explosion must be considered. In order to avoid such dangers, diluting the exhaust gas with inert gas such as nitrogen gas has been considered, but diluting the exhaust gas to the lower explosive limit requires a large amount of inert gas, and Dilution increases the total amount of exhaust gas, requiring an extremely large scrubbing tower.
そこで本発明は、大量の不活性ガスによる希釈を必要と
せずに上記爆発の危険性をなくし、さらに小型に形成す
ることのできる洗浄塔を提供することを目的としている
。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a cleaning tower that eliminates the risk of explosion without requiring dilution with a large amount of inert gas, and that can be made smaller.
上記した目的を達成するために本発明は、複数台の半導
体製造装置から排出される排ガスの除害を行う洗浄塔に
おいて、該洗浄塔内を、複数の洗浄室に区画形成すると
ともに、各洗浄室の上部に排ガスの除害を行う洗浄液を
導入する洗浄隋導入口を、また各洗浄室の下部に各半導
体製造装置の排ガスの排出口にそれぞれ連通する排ガス
導入口を設けたことを特徴とする。In order to achieve the above object, the present invention provides a cleaning tower for detoxifying exhaust gas discharged from a plurality of semiconductor manufacturing equipment, in which the interior of the cleaning tower is divided into a plurality of cleaning chambers, and each cleaning The cleaning chamber is characterized by having a cleaning inlet in the upper part of the chamber for introducing a cleaning liquid for removing harmful substances from the exhaust gas, and an exhaust gas inlet in the lower part of each cleaning chamber to communicate with the exhaust gas outlet of each semiconductor manufacturing equipment. do.
従って、各半導体製造装置から排出された排ガスは、そ
れぞれ別の洗浄室に導入されて洗浄されるので、排ガス
の混合による爆発の危険性を回避することができる。Therefore, the exhaust gas discharged from each semiconductor manufacturing device is introduced into separate cleaning chambers and cleaned, thereby avoiding the risk of explosion due to mixture of exhaust gases.
以下、本発明の一実施例を図面に基づいて説明する。 Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図は洗浄塔の断面正面図、第２図は洗浄塔及び半導
体製造装置を示す平面図、第３図は洗浄塔の側面図であ
って、洗浄塔１１内には、充填剤１２が充填された複数
の洗浄室１３．１３が形成されている。FIG. 1 is a cross-sectional front view of the cleaning tower, FIG. 2 is a plan view showing the cleaning tower and semiconductor manufacturing equipment, and FIG. 3 is a side view of the cleaning tower. A plurality of filled cleaning chambers 13.13 are formed.
上記洗浄室１３は、半導体製造装置１４．１４の台数に
応じて形成されるもので、垂直方向に設けられた隔壁１
５．１５により区画形成されている。The cleaning chamber 13 is formed according to the number of semiconductor manufacturing apparatuses 14, 14, and has partition walls 1 provided in the vertical direction.
5.15.
この隔壁１５は、上下両端部を洗浄塔１１の天板１６及
び底板１７と離間して設けられており、天板１６と隔壁
１５の上端との間を除害されたガスを排出するためのガ
ス流路１８とし、天板１６の中央部に設けられたガス出
口管１９から除害されたガスを排出している。また底板
１７と隔壁１５の下端との間は、洗浄液Ｆのみを連通さ
せる洗浄液流路２０としており、各洗浄室１３の底部に
溜る洗浄液Ｆを、洗浄塔１１の一側に設けられた配管２
１からポンプ２２を介して洗浄塔１１の上部に圧送し、
各洗浄室１３内に循環させている。This partition wall 15 is provided with its upper and lower ends separated from the top plate 16 and bottom plate 17 of the cleaning tower 11, and is used to discharge the detoxified gas between the top plate 16 and the upper end of the partition wall 15. The detoxified gas is discharged from a gas flow path 18 and a gas outlet pipe 19 provided at the center of the top plate 16. Also, between the bottom plate 17 and the lower end of the partition wall 15 is a cleaning liquid passage 20 that allows only the cleaning liquid F to communicate, and the cleaning liquid F accumulated at the bottom of each cleaning chamber 13 is transferred to a pipe 2 provided on one side of the cleaning tower 11.
1 to the upper part of the washing tower 11 via the pump 22,
It is circulated within each cleaning chamber 13.
そして各洗浄室１３の下部には、各半導体製造装置１４
の排ガスＷの排出口２３にそれぞれ連通する排ガス導入
口２４が設けられており、また各洗浄室１３の上部には
、排ガスＷの除害を行う洗浄液Ｅ′４ｉ−導入する洗浄
液導入口２５が設けられている。In the lower part of each cleaning chamber 13, each semiconductor manufacturing device 14 is provided.
An exhaust gas inlet 24 is provided which communicates with the exhaust outlet 23 of the exhaust gas W, and in the upper part of each cleaning chamber 13, a cleaning liquid inlet 25 for introducing the cleaning liquid E'4i which removes harmful substances from the exhaust gas W is provided. It is provided.
各半導体製造装置１４から排出された排ガスＷは、それ
ぞれの排出口２３から、それぞれ連通している排ガス導
入口２４を通って各洗浄室１３内に尋人され、洗浄室１
３内を上昇して上方から流下してくる洗浄液Ｆと接触し
、除害された後にガス流路１８で他の洗浄室１３で除害
されたガスと共にガス出口管１９から排出される。Exhaust gas W discharged from each semiconductor manufacturing device 14 is discharged from each exhaust port 23 into each cleaning chamber 13 through an exhaust gas inlet 24 that communicates with the cleaning chamber 1.
3 and comes into contact with the cleaning liquid F flowing down from above, and after being detoxified, it is discharged from the gas outlet pipe 19 along with the gas detoxified in the other cleaning chambers 13 through the gas flow path 18.
また各洗浄室１３を流下する洗浄液Ｆは、洗浄液流路２
０で他の洗浄室１３を流下した洗浄液Ｆと共に配管２１
から導出され、ポンプ２２で上方に圧送され、各洗浄室
１３内に分岐して洗浄液導入口２５から導入される。Further, the cleaning liquid F flowing down each cleaning chamber 13 is connected to the cleaning liquid flow path 2.
The pipe 21 along with the cleaning liquid F that flowed down the other cleaning chamber 13 at 0
The cleaning liquid is drawn out from the cleaning chamber 13, is forced upward by the pump 22, is branched into each cleaning chamber 13, and is introduced from the cleaning liquid inlet 25.
このように各半導体製造装置１４から排出される排ガス
Ｗをそれぞれ別の洗浄室１３に導入して洗浄し、排ガス
Ｗの除害を行うので洗浄前の排ガスＷが混合することが
なく、燃焼や爆発の虞がない。また排ガスＷを大量の不
活性ガスで希釈する必要がないので、洗浄塔１１に導入
される排ガスＷのＩａｆｆｉが多くなることがなく、洗
浄塔１１を小型に形成することができる。In this way, the exhaust gases W discharged from each semiconductor manufacturing equipment 14 are introduced into separate cleaning chambers 13 and cleaned, and the exhaust gases W are detoxified. Therefore, the exhaust gases W before cleaning are not mixed, and combustion and combustion are prevented. There is no risk of explosion. Further, since there is no need to dilute the exhaust gas W with a large amount of inert gas, the Iaffi of the exhaust gas W introduced into the cleaning tower 11 does not increase, and the cleaning tower 11 can be formed in a small size.
さらに各半導体！Ｆｊ造装置に個別に洗浄塔を設けるの
に比べて洗浄液を圧送するポンプが１台でよく、除害さ
れた後に排出されるガスの配管も１本でよいため、装置
のコストダウンが図れ、装置を小型に形成することで洗
浄液の量も少なくてよく、運転コストも低減できる。More semiconductors! Compared to installing a separate cleaning tower in the FJ manufacturing equipment, only one pump is required to forcefully pump the cleaning liquid, and only one pipe is required for the gas that is discharged after detoxification, reducing the cost of the equipment. By making the device smaller, the amount of cleaning liquid can be reduced, and operating costs can also be reduced.
尚、洗浄塔の形状等は、円筒形等信の形状に形成するこ
ともできる。Note that the shape of the washing tower can also be formed into a cylindrical shape or the like.
実験例
洗浄塔
外形寸法（ＷｘＤｘＨｉｍ）
１２００ｘ５００ｘ１９４０
反応部 ４分割（４室）３００ｍ１１１角材
質 ＰＶＣ
洗浄液 ２０％苛性ソーダ水溶液
流徴 ８０ Ｊ ／ ｔｍ＊
排カス流１１１４０ノ／＋ｎｉｍ
ｐ −ｃｖ。Experimental example Washing tower external dimensions (WxDxHim) 1200x500x1940 Reaction section 4 divisions (4 chambers) 300m 111 square pieces
Quality PVC Cleaning liquid 20% caustic soda aqueous solution Flow rate 80 J/tm* Waste flow 11140 min/+nim p-cv.
型 式 多室型（４室）
使用ガス ＳＬ Ｈａ ・Ｈ２
ｐ−ｃｖｏの各室と洗浄塔の各室をそれぞれ別配管によ
り接続するとともに、各Ｐ−ＣＶＤからの排ガスを窒素
ガスで希釈し、ＳＬＨ＋＋１度を５％以下として洗浄塔
の洗浄室に導入して洗浄・除害を行った。Model Multi-chamber type (4 chambers) Gas used SL Ha ・H2 Each p-cvo chamber and each cleaning tower chamber are connected through separate piping, and the exhaust gas from each P-CVD is diluted with nitrogen gas. The SLH++1 degree was set to 5% or less and introduced into the cleaning chamber of the cleaning tower for cleaning and detoxification.
洗浄塔の出口部における排ガス中のＳＬ ８４濃度を測
定した結果、２５ ｐｐｍ以下に減少しており、ガス出
口管で排ガスが混合してもＳＬ Ｈ４による燃焼、爆発
の危険性のないことが確認された。As a result of measuring the SL 84 concentration in the exhaust gas at the outlet of the cleaning tower, it was found to have decreased to 25 ppm or less, confirming that there is no danger of combustion or explosion due to SL H4 even if the exhaust gas is mixed at the gas outlet pipe. It was done.
（発明の効果）
本発明は以上説明したように、洗浄塔内を複数の洗浄室
に区画形成し、各洗浄室にそれぞれ洗浄液導入口と排ガ
ス導入口を設けたから、洗浄前の排ガスが混合すること
がなくなり、燃焼や爆発の危険性がなくなる。これによ
り排ガスを人聞の不活性ガスで希釈する必要がなくなり
、排ガスの総量が多くなることがないので、洗浄塔を小
型に形成することができ、洗浄塔の建設コスト及び運転
コストの低減を図ることができる。(Effects of the Invention) As explained above, in the present invention, the interior of the cleaning tower is divided into a plurality of cleaning chambers, and each cleaning chamber is provided with a cleaning liquid inlet and an exhaust gas inlet, so that the exhaust gas before cleaning is mixed. This eliminates the risk of combustion or explosion. This eliminates the need to dilute the flue gas with inert gas and does not increase the total amount of flue gas, allowing the cleaning tower to be made smaller and reducing the construction and operating costs of the cleaning tower. can be achieved.
第１図乃至第３図は本発明の一実施例を示すもので、第
１図は洗浄塔の断面正面図、第２図は洗浄塔及び半導体
製造装置を示す平面図、第３図は洗浄塔の側面図、第４
図及び第５図はそれぞれ従来の洗浄塔を示す説明図であ
る。
１１・・・洗、浄塔 １３・・・洗浄室 １４・・
・半導体製造装ｆａｔ １５・・・隔壁 １８・
・・ガス流路１９・・・ガス出口管 ２０・・・洗浄
液流路 ２２・・・ポンプ ２４・・・排ガス導入
口 ２５・・・洗浄液導入口 Ｆ・・・洗浄液
Ｗ・・・排ガス特 許 出 願 人 日本酸素株式会社
同 インターナショナルビジネス マシ
ーンズ
コーポレーション1 to 3 show one embodiment of the present invention, in which FIG. 1 is a cross-sectional front view of a cleaning tower, FIG. 2 is a plan view showing a cleaning tower and semiconductor manufacturing equipment, and FIG. 3 is a cleaning tower. Side view of the tower, No. 4
FIG. 5 and FIG. 5 are explanatory diagrams showing conventional cleaning towers, respectively. 11...Washing, purification tower 13...Washing room 14...
・Semiconductor manufacturing equipment fat 15...Partition wall 18・
...Gas flow path 19...Gas outlet pipe 20...Cleaning liquid flow path 22...Pump 24...Exhaust gas inlet 25...Cleaning liquid inlet F...Cleaning liquid
W...Exhaust gas patent applicant Nippon Sanso Co., Ltd. International Business Machines Corporation
Claims (1)
害を行う洗浄塔において、該洗浄塔内を、複数の洗浄室
に区画形成するとともに、各洗浄室の上部に排ガスの除
害を行う洗浄液を導入する洗浄液導入口を、また各洗浄
室の下部に各半導体製造装置の排ガスの排出口にそれぞ
れ連通する排ガス導入口を設けたことを特徴とする洗浄
塔。 ２、前記洗浄室は、洗浄塔内に垂直に設けられた複数の
隔壁により形成されるとともに、前記洗浄液導入口より
上方に、隣接する洗浄室と連通するガス流路を、また前
記排ガス導入口より下方に、各洗浄室内の底部に溜る洗
浄液のみを連通させる洗浄液流路を設けたことを特徴と
する特許請求の範囲第１項記載の洗浄塔。[Claims] 1. In a cleaning tower that removes harmful substances from exhaust gas discharged from a plurality of semiconductor manufacturing equipment, the inside of the cleaning tower is divided into a plurality of cleaning chambers, and the upper part of each cleaning chamber is A cleaning tower characterized in that a cleaning liquid inlet for introducing a cleaning liquid for removing harmful substances from exhaust gas is provided, and an exhaust gas inlet is provided in the lower part of each cleaning chamber to communicate with the exhaust gas outlet of each semiconductor manufacturing device. 2. The cleaning chamber is formed by a plurality of partition walls installed vertically in the cleaning tower, and has a gas flow path communicating with the adjacent cleaning chamber above the cleaning liquid inlet, and also has a gas flow path connected to the exhaust gas inlet. 2. The cleaning tower according to claim 1, further comprising a cleaning liquid flow path that communicates only the cleaning liquid accumulated at the bottom of each cleaning chamber at a lower portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62280491A JPH01123616A (en) | 1987-11-06 | 1987-11-06 | Washing tower |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62280491A JPH01123616A (en) | 1987-11-06 | 1987-11-06 | Washing tower |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01123616A true JPH01123616A (en) | 1989-05-16 |
Family
ID=17625821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62280491A Pending JPH01123616A (en) | 1987-11-06 | 1987-11-06 | Washing tower |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01123616A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014178882A1 (en) * | 2013-05-03 | 2014-11-06 | Fluor Technologies Corporation | Systems and methods for multi-celled gas processing |
| CN105311956A (en) * | 2015-11-13 | 2016-02-10 | 中国化学工程第六建设有限公司 | Packing-type catalytic desulfurization tower with reinforced concrete structure |
| US9333456B2 (en) | 2013-05-03 | 2016-05-10 | Fluor Technologies Corporation | Systems and methods for multi-celled gas processing |
-
1987
- 1987-11-06 JP JP62280491A patent/JPH01123616A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014178882A1 (en) * | 2013-05-03 | 2014-11-06 | Fluor Technologies Corporation | Systems and methods for multi-celled gas processing |
| CN105392547A (en) * | 2013-05-03 | 2016-03-09 | 氟石科技公司 | Systems and methods for multi-celled gas processing |
| US9333456B2 (en) | 2013-05-03 | 2016-05-10 | Fluor Technologies Corporation | Systems and methods for multi-celled gas processing |
| AU2013388102B2 (en) * | 2013-05-03 | 2016-07-21 | Fluor Technologies Corporation | Systems and methods for multi-celled gas processing |
| US9975083B2 (en) | 2013-05-03 | 2018-05-22 | Fluor Technologies Corporation | Systems and methods for multi-celled gas processing |
| CN105392547B (en) * | 2013-05-03 | 2020-05-12 | 氟石科技公司 | System and method for multi-unit gas processing |
| CN105311956A (en) * | 2015-11-13 | 2016-02-10 | 中国化学工程第六建设有限公司 | Packing-type catalytic desulfurization tower with reinforced concrete structure |
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