JPH01123423A - Method of patterning diamond film - Google Patents
Method of patterning diamond filmInfo
- Publication number
- JPH01123423A JPH01123423A JP28135987A JP28135987A JPH01123423A JP H01123423 A JPH01123423 A JP H01123423A JP 28135987 A JP28135987 A JP 28135987A JP 28135987 A JP28135987 A JP 28135987A JP H01123423 A JPH01123423 A JP H01123423A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- diamond
- diamond film
- negative pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 62
- 239000010432 diamond Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims description 24
- 238000000059 patterning Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 150000002739 metals Chemical class 0.000 claims abstract description 4
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 3
- 150000003624 transition metals Chemical class 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 150000001247 metal acetylides Chemical class 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- -1 boron carbides Chemical class 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 44
- 230000015572 biosynthetic process Effects 0.000 description 6
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、ダイヤモンド膜のパターニング法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a diamond film patterning method.
［従来の技術］
半導体デバイスなどにおいて、ダイヤモンド膜から成る
パターンを必要とすることがある。ダイヤモンドは化学
的に極めて安定なので、液相でダイヤモンドをエツチン
グする方法によってダイヤモンド膜のパターニングを行
うことは不可能である。また、ダイヤモンドは物質中最
高の硬度を有するので、機械的に加工することも極めて
困難である。[Prior Art] Semiconductor devices and the like may require a pattern made of a diamond film. Since diamond is chemically extremely stable, it is impossible to pattern diamond films by etching diamond in the liquid phase. Furthermore, since diamond has the highest hardness among substances, it is extremely difficult to process it mechanically.
ダイヤモンド゛のパタ一二しグを可能にする１つの方法
として、プラズマによるエツチングを用いる方法が考え
られる。例えば、ＡＱをマスクとしてＯ，イオンビーム
によってダイヤモンドをプラズマエツチングする。しか
し、このプラズマエツチングにおいては、特殊なダイヤ
モンド用プラズマエツチング装置を用い、煩雑な手順及
び長時間を要するという問題がある。One possible method for making patterning of diamond possible is to use plasma etching. For example, diamond is plasma etched using an O and ion beam using AQ as a mask. However, this plasma etching has the problem of using a special plasma etching device for diamond, requiring complicated procedures and a long time.
［発明の目的コ
本発明の目的は、ダイヤモンド膜のパターンを簡単に形
成できる方法を提供することにある。[Object of the Invention] An object of the present invention is to provide a method for easily forming a diamond film pattern.
［発明の構成］
本発明の目的は、マスク材料から成るネガパターン膜を
基板上に形成した後、ネガパターン膜によりマスクされ
ていない部分の上に選択的にダイヤモンド膜を成長させ
、ネガパターン膜を除去し、これによりダイヤモンド膜
のパターンを基板上に形成することを特徴とするダイヤ
モンド膜のパターニング法によって達成される。[Structure of the Invention] An object of the present invention is to form a negative pattern film made of a mask material on a substrate, and then selectively grow a diamond film on the portions not masked by the negative pattern film. This is achieved by a diamond film patterning method characterized in that the diamond film pattern is removed, thereby forming a diamond film pattern on the substrate.
本発明の方法は、気相合成法におけるダイヤモンドの核
生成密度及び結晶成長速度が、基板とする材料に応じて
異なることを利用したものであり、２種類の材料と成長
条件を選択することにより、一方の材料の上にのみダイ
ヤモンドを成長させ、他方の材料の上にはダイヤモンド
が成長しないようにして、ダイヤモンド膜のパターンを
得るものである。The method of the present invention takes advantage of the fact that the diamond nucleation density and crystal growth rate in vapor phase synthesis differ depending on the substrate material, and by selecting two types of materials and growth conditions. , a diamond film pattern is obtained by growing diamond only on one material and not growing diamond on the other material.
マスク材料は、通常、周期律表のｌＶａ、 ＶａｌＶＩ
ａ、■ａ１■ａ族の遷移金属、Ｓｉ及びＢの単体、炭化
物、窒化物、ケイ化物及びホウ化物、並びにＳｉＯｘか
ら成る群から選択された少なくとも１種の物質から成る
。The mask material is usually lVa, ValVI of the periodic table.
It is made of at least one substance selected from the group consisting of transition metals of groups a, ■a1 and a, simple substances of Si and B, carbides, nitrides, silicides and borides, and SiOx.
以下、添付図面を参照して、本発明を説明する。The present invention will be described below with reference to the accompanying drawings.
なお、本発明は、添付図面の態様に限定されるものでは
ない。Note that the present invention is not limited to the embodiments shown in the accompanying drawings.
第１図は、本発明のパターニング法の概略を示す断面図
である。FIG. 1 is a cross-sectional view schematically showing the patterning method of the present invention.
第１図（１）に示す基板１１の上に、マスク材料からな
るネガパターン膜」２を形成する（第１図（２））。こ
れに先だって、基板１１は、ダイヤモンド粒などによっ
て研摩処理（ダイヤモンド）しておくことが好ましい。A negative pattern film 2 made of a mask material is formed on the substrate 11 shown in FIG. 1(1) (FIG. 1(2)). Prior to this, it is preferable that the substrate 11 be polished (diamond) using diamond particles or the like.
ただし、基板がダイヤモンド単結晶である場合には必要
ない。ネガパターンの形成は、パターンが粗い場合には
、メタルマスクを用いて蒸着などを行うことによって行
え、あるいは、パターンが細かい場合には、蒸着などに
より全面に膜形成した後に通常のフォトリソグラフィ技
術によりパターニングすることによって行える。However, this is not necessary if the substrate is a diamond single crystal. If the pattern is rough, a negative pattern can be formed by vapor deposition using a metal mask, or if the pattern is fine, it can be formed by forming a film over the entire surface by vapor deposition and then using normal photolithography technology. This can be done by patterning.
次いで、マスク材料で被覆されていない基板露出表面の
上に選択的に、目的とするパターン通りにダイヤモンド
膜１３を成長させる（第１図（３））。Next, a diamond film 13 is selectively grown on the exposed surface of the substrate not covered with the mask material in accordance with a desired pattern (FIG. 1(3)).
ダイヤモンド膜は、Ｍｏ５Ｔａ、Ｗ、Ｓｉ、Ｇｅなどの
基板表面には成長しやすく、基板表面にダイヤモンド粉
末などの高硬度粉末による研摩処理のある場合には、い
っそう成長し易くなる。研摩処理のない場合やＦｅ、Ｃ
ｏ５Ｎｉ、Ｃｒ、Ｍｒ＋ＳＣｕ又はＡｇの表面へは成長
が起こりにくい。ダイヤモンド膜の成長し易い材料を基
板として用いて、成長し難い材料を材料をマスクとして
用いた場合に、マスク以外の基板表面にダイヤモンド膜
の成長を選択的に行える。また、マスクの材料がダイヤ
モンド膜の成長し易い材料であっても、研摩処理を施さ
ないことによって成長を抑制することができる。A diamond film grows easily on the surface of a substrate made of Mo5Ta, W, Si, Ge, etc., and grows even more easily when the surface of the substrate has been subjected to polishing treatment with a high hardness powder such as diamond powder. Cases without polishing treatment, Fe, C
Growth is difficult to occur on the surface of o5Ni, Cr, Mr+SCu or Ag. When a material on which a diamond film is easily grown is used as a substrate and a material on which it is difficult to grow is used as a mask, the diamond film can be selectively grown on the surface of the substrate other than the mask. Further, even if the material of the mask is a material on which a diamond film easily grows, growth can be suppressed by not performing polishing treatment.
一般に、ダイヤモンド膜の成長し易い材料は、周期律表
のＩＶａ、 Ｖａ、 Ｖｌａ族の金属及びＳｉの単体、
炭化物、窒化物、炭窒化物、ケイ化物、ホウ化物、ホウ
炭化物及びホウ窒化物、Ａ１２及びＢの炭化物及び窒化
物、Ａ Ｑ ＣＮ 、 Ａ Ｑ ｚ Ｏ３並びにＳｉｎ
、から成る群から選択された少なくとも１種の物質など
である。一方、ダイヤモンド膜の成長し難い材料は、■
ａ１■ａ族の金属などである。In general, materials that are easy to grow diamond films include metals in the IVa, Va, and Vla groups of the periodic table, and simple Si;
Carbides, nitrides, carbonitrides, silicides, borides, boron carbides and boron nitrides, carbides and nitrides of A12 and B, A Q CN , A Q z O3 and Sin
, at least one substance selected from the group consisting of. On the other hand, the material that is difficult to grow diamond film is ■
a1■a group metals, etc.
ダイヤモンド膜の形成は、原料ガスとしてＣＨ４とＨｌ
などを用いたマイクロ波プラズマＣＶＤ法又はフィラメ
ント法などによって行える。ただし、ダイヤモンド膜を
成長させる条件及び研摩処理などによって、同じ材料で
もダイヤモンド膜の核生成密度及び成長速度を制御する
ことができる。The formation of a diamond film uses CH4 and Hl as raw material gases.
This can be carried out by a microwave plasma CVD method using, for example, a filament method, or the like. However, the nucleation density and growth rate of the diamond film can be controlled even with the same material by changing the conditions for growing the diamond film, polishing treatment, etc.
ネガ／む−ン膜１２を除去して、目的とするダイヤモン
ド膜１３のパターンが基板ｌｌ上に形成された素子を得
る（第１図（４））。ネガパターンの除去は、例えば、
マスク材料を溶解する酸に浸漬することによって行える
。例えば、Ｍｏは王水によって、Ｓｉはフッ硝酸によっ
て除去できる。この時、基板を残してネガパターン膜の
みを除去する場合には、基板材料とネガパターン材料を
異なる物質にして、溶解に用いる薬品は、ネガパターン
材料のみを溶解する。これを考慮して、基板材料とネガ
パターン材料の組み合わせを考える必要がある。ネガパ
ターンと同時に基板をも除去する場合には、両者は同じ
材料でもよい。The negative/moon film 12 is removed to obtain a device in which the intended pattern of the diamond film 13 is formed on the substrate 11 (FIG. 1(4)). For example, negative pattern removal can be done by
This can be done by immersing the mask material in an acid that dissolves it. For example, Mo can be removed with aqua regia, and Si can be removed with fluoronitric acid. At this time, if only the negative pattern film is removed while leaving the substrate, the substrate material and the negative pattern material are made of different substances, and the chemicals used for dissolution dissolve only the negative pattern material. Taking this into consideration, it is necessary to consider the combination of substrate material and negative pattern material. When removing the negative pattern and the substrate at the same time, both may be made of the same material.
［発明の効果］
本発明によれば、ダイヤモンドのプラズマエツチングを
要することなく、簡単な手順及び短時間で、ダイヤモン
ド膜のパターニングを行える。[Effects of the Invention] According to the present invention, a diamond film can be patterned in a simple procedure and in a short time without requiring plasma etching of diamond.
本発明は、ダイヤモンド膜のパターンを必要とするダイ
ヤモンド半導体デバイス、プリンターヘッド及びヒート
シンクの製造などにおいて有用である。The present invention is useful in manufacturing diamond semiconductor devices, printer heads, heat sinks, etc. that require diamond film patterns.
［発明の好ましい態様コ 以下に本発明の実施例を示す。[Preferred embodiments of the invention] Examples of the present invention are shown below.
実施例１
第２図に示すような手順により、ＭＩＳ型電界効果トラ
ンジスダを製造した。Example 1 A MIS type field effect transistor was manufactured according to the procedure shown in FIG.
（ｉ）Ｏｒをネガパターン膜として蒸着した３■ｘ２ｘ
ｘｘｌ＊ｘのＩｂ型人工単結晶ダイヤモンド基板２１の
（１００）面上に、マイクロ波プラズマＣＶＤ法によっ
て、厚さ０．５μ次のＢハイトープＰ型ダイヤモンド薄
膜層２２をネガパターン膜以外の部分に選択的に成長さ
せた。合成条件：マイクロ波パワー−３５０Ｗ、反応圧
力＝ ３０ Ｔｏｒｒ。(i) 3×2x with Or deposited as a negative pattern film
On the (100) plane of the Ib type artificial single crystal diamond substrate 21 of xxl*x, a 0.5 μm thick B hightope P type diamond thin film layer 22 is formed on the part other than the negative pattern film by the microwave plasma CVD method. selectively grown. Synthesis conditions: microwave power - 350W, reaction pressure = 30 Torr.
反応ガス組成−ＣＨ，（０，５％）＋ Ｂ ｚＨｅ（０
−００１％）＋Ｈ２（残）。Reaction gas composition -CH, (0,5%) + B zHe (0
-001%) + H2 (remainder).
（ｉｉ）Ｃｒ膜を王水で除去し、その後、再びＣｒ膜を
蒸着し、フォトリソグラフィ技術によりＣｒネガパター
ン膜を形成する。(ii) The Cr film is removed with aqua regia, and then the Cr film is deposited again, and a Cr negative pattern film is formed by photolithography.
（ｉｉｉ ）ネガパターン膜２３が形成されていない基
板２１の表面上に、マイクロ波プラズマＣＶＤ法によっ
て、厚さ０．５μ次のホウ素ドープＰ型ダイヤモンド単
結晶薄膜層２４を形成した。合成条件二マイクロ波パワ
ー＝３５０Ｗ、反応圧力＝３０Ｔｏｒｒ、反応ガス組成
＝ ＣＨ４（０、５％）十Ｂｚ１４ｅ（０，００００５
％） ＋ Ｈｔ （残）。(iii) On the surface of the substrate 21 on which the negative pattern film 23 was not formed, a boron-doped P-type diamond single crystal thin film layer 24 having a thickness of 0.5 μm was formed by microwave plasma CVD. Synthesis conditions: Microwave power = 350 W, reaction pressure = 30 Torr, reaction gas composition = CH4 (0.5%) 10Bz14e (0,00005
%) + Ht (remainder).
（１ｖ）王水によってＭｏマスクを除去した。(1v) Mo mask was removed with aqua regia.
（Ｖ）再び、フォトリソグラフィ技術を用いてＣｒネガ
パターン膜を形成した後、マイクロ波プラズマＣＶＤ法
で厚さ約ｔｏｏｏ人のノンドープダイヤモンド薄膜層２
５をネガパターン以外の部分に成長させた。合成条件：
マイクロ波パワー＝３５０Ｗ、反応圧力＝ ３０ Ｔｏ
ｒｒ、反応ガス＝ＣＨ，（０，５％）＋ Ｈ，（９９、
５％）。(V) After forming a Cr negative pattern film again using photolithography technology, a non-doped diamond thin film layer 2 with a thickness of about 100 ml was formed using microwave plasma CVD method.
5 was grown in areas other than the negative pattern. Synthesis conditions:
Microwave power = 350W, reaction pressure = 30 To
rr, reaction gas = CH, (0.5%) + H, (99,
5%).
（ｖｉ）Ｃｒネガパターン膜を王水により除去した後、
Ａｕ／Ｍｏ／Ｔｉの３層電極を蒸着し、一部エッチング
を行って、電極２６．２６’、２６”を形成した。(vi) After removing the Cr negative pattern film with aqua regia,
A three-layer electrode of Au/Mo/Ti was deposited and partially etched to form electrodes 26, 26', 26''.
実施例２
以下のようにして、ダイヤモンド膜ヒートシンクを製造
した。Example 2 A diamond film heat sink was manufactured as follows.
２５ｍｍ Ｋ ２５ｍｍ ｙ、 ０．５％ｍの大きさを
有するＳｉ基板を用意して、その表面上にダイヤモンド
粒でダイヤモンドを施した後、Ｎｉを蒸着させ、フォト
リソグラフィ技術により、メツシュの大きさが１ｆｆｉ
ｆｆｘｌｊＩｍになるようにＮｉを網状に蒸着させ、Ｎ
ｉネガパターン膜を形成した。Ｎｉネガパターン膜の厚
さは３μ次、Ｎｉネガパターン膜の幅は０ 、３ ａｍ
であった。A Si substrate with a size of 25 mm K, 25 mm y, and 0.5% m was prepared, and after diamond was applied with diamond grains on the surface, Ni was evaporated, and the size of the mesh was adjusted using photolithography technology. 1ffi
Ni is deposited in a net shape so that ffxljIm is formed, and N
An i-negative pattern film was formed. The thickness of the Ni negative pattern film is 3 μm, and the width of the Ni negative pattern film is 0.3 am.
Met.
次いで、マイクロ波プラズマＣＶＤ法により、Ｓｉ上の
みに選択的に、ダイヤモンド多結晶を厚さ０ 、２ ｍ
ｍで成長させた。合成条件二マイクロ波パワー’＝４０
０Ｗ、反応圧力＝ ３０ Ｔｏｒｒｓ反応ガス組成：Ｃ
Ｈａ（９９％）＋Ｈｔ（１％）。Next, by microwave plasma CVD method, diamond polycrystals were selectively deposited only on the Si to a thickness of 0.2 m.
It was grown at m. Synthesis condition 2 microwave power' = 40
0W, reaction pressure = 30 Torrs Reaction gas composition: C
Ha (99%) + Ht (1%).
Ｎｉネガパターン膜を王水で溶解し、次いでＳｉ基板を
フッ硝酸で溶解除去して、ｌｚｚ ｘ １１３１ Ｘ
０゜２１１Ｒの大きさのダイヤモンドヒートシンクを得
た。The Ni negative pattern film was dissolved with aqua regia, and then the Si substrate was dissolved and removed with fluoronitric acid to form lzz x 1131
A diamond heat sink with a size of 0°211R was obtained.
この方法においては、加工困難なダイヤモンド膜を切り
刻む手間が省けた。This method eliminates the need to cut the diamond film, which is difficult to process.
第１図は、本発明のパターニング法の概略を示す断面図
、及び
第２図は、本発明のパターニング法を使用した電界効果
トランジスタの製造を示す断面図である。
１１．２１・・・基板、
１２．２３・・・ネガパターン膜、
１３．２４・・・ダイヤモンド膜。
特許出願人住友電気工業株式会社
代理人弁理士青山 葆 ほか１名
第１図FIG. 1 is a cross-sectional view schematically showing the patterning method of the present invention, and FIG. 2 is a cross-sectional view showing the manufacture of a field effect transistor using the patterning method of the present invention. 11.21...Substrate, 12.23...Negative pattern film, 13.24...Diamond film. Patent applicant Sumitomo Electric Industries, Ltd. Patent attorney Aoyama Aoyama and one other person Figure 1
Claims (8)
した後、ネガパターン膜によりマスクされていない部分
の上に選択的にダイヤモンド膜を成長させ、ネガパター
ン膜を除去し、これによりダイヤモンド膜のパターンを
基板上に形成することを特徴とするダイヤモンド膜のパ
ターニング法。1. After forming a negative pattern film made of a mask material on a substrate, a diamond film is selectively grown on the portions not masked by the negative pattern film, and the negative pattern film is removed, thereby changing the pattern of the diamond film. A diamond film patterning method characterized by forming it on a substrate.
移金属、Ｓｉ及びＢの単体、炭化物、窒化物、炭窒化物
、ケイ化物及びホウ化物、並びにＳｉＯ＿２から成る群
から選択された少なくとも１種の物質から成る特許請求
の範囲第１項記載の方法。2. The mask material is at least one member selected from the group consisting of transition metals of groups IVa, Va, and VIa of the periodic table, elemental Si and B, carbides, nitrides, carbonitrides, silicides, and borides, and SiO_2. 2. A method according to claim 1, comprising seed material.
及びＡｇから成る群から選択された少なくとも１種の金
属を主成分とする特許請求の範囲第１項記載の方法。3. Mask material is Cr, Mn, Fe, Co, Ni, Cu
The method according to claim 1, wherein the main component is at least one metal selected from the group consisting of and Ag.
Ｓｉの単体、炭化物、窒化物、炭窒化物、ケイ化物、ホ
ウ化物、ホウ炭化物及びホウ窒化物、Ａｌ及びＢの炭化
物及び窒化物、ＡｌＣＮ、Ａｌ＿２Ｏ＿３並びにＳｉＯ
＿２から成る群から選択された少なくとも１種の物質か
ら成る特許請求の範囲第１〜３項のいずれかに記載の方
法。4. The substrate is made of metals of groups IVa, Va, and VIa of the periodic table, simple substances of Si, carbides, nitrides, carbonitrides, silicides, borides, boron carbides and boron nitrides, carbides and nitrides of Al and B. , AlCN, Al_2O_3 and SiO
The method according to any one of claims 1 to 3, comprising at least one substance selected from the group consisting of _2.
の範囲第１項記載の方法。5. 2. The method of claim 1, wherein the diamond film grown is single crystal.
パターンを持つダイヤモンド膜を得る特許請求の範囲第
１〜５項のいずれかに記載の方法。6. After the diamond film is grown, the substrate itself is also removed.
A method according to any one of claims 1 to 5 for obtaining a patterned diamond film.
り、その上に、ダイヤモンド単結晶膜を成長させる特許
請求の範囲第１項又は第２項に記載の方法。7. 3. The method according to claim 1, wherein the substrate is a natural or artificially synthesized diamond single crystal, and a diamond single crystal film is grown thereon.
るものである特許請求の範囲第１項記載の方法。8. 2. The method according to claim 1, wherein the surface of the substrate is polished with a high-hardness powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28135987A JP2645712B2 (en) | 1987-11-07 | 1987-11-07 | Diamond film patterning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28135987A JP2645712B2 (en) | 1987-11-07 | 1987-11-07 | Diamond film patterning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01123423A true JPH01123423A (en) | 1989-05-16 |
| JP2645712B2 JP2645712B2 (en) | 1997-08-25 |
Family
ID=17638011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28135987A Expired - Lifetime JP2645712B2 (en) | 1987-11-07 | 1987-11-07 | Diamond film patterning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2645712B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0345594A (en) * | 1989-07-11 | 1991-02-27 | Nippon Soken Inc | Patterning of vapor phase synthesized diamond film |
| DE4435413A1 (en) * | 1993-10-25 | 1995-04-27 | Ford Werke Ag | Process for the manufacture of mechanical devices and micro-electromechanical systems |
| EP0715314A1 (en) * | 1994-11-30 | 1996-06-05 | Sumitomo Electric Industries, Limited | Window and preparation thereof |
| US5785754A (en) * | 1994-11-30 | 1998-07-28 | Sumitomo Electric Industries, Ltd. | Substrate, semiconductor device, element-mounted device and preparation of substrate |
| CN114921766A (en) * | 2022-05-26 | 2022-08-19 | 太原理工大学 | Diamond/metal composite radiating fin and preparation method thereof |
-
1987
- 1987-11-07 JP JP28135987A patent/JP2645712B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0345594A (en) * | 1989-07-11 | 1991-02-27 | Nippon Soken Inc | Patterning of vapor phase synthesized diamond film |
| DE4435413A1 (en) * | 1993-10-25 | 1995-04-27 | Ford Werke Ag | Process for the manufacture of mechanical devices and micro-electromechanical systems |
| EP0715314A1 (en) * | 1994-11-30 | 1996-06-05 | Sumitomo Electric Industries, Limited | Window and preparation thereof |
| US5785754A (en) * | 1994-11-30 | 1998-07-28 | Sumitomo Electric Industries, Ltd. | Substrate, semiconductor device, element-mounted device and preparation of substrate |
| US5788766A (en) * | 1994-11-30 | 1998-08-04 | Sumitomo Electric Industries, Ltd. | Window and preparation thereof |
| CN114921766A (en) * | 2022-05-26 | 2022-08-19 | 太原理工大学 | Diamond/metal composite radiating fin and preparation method thereof |
| CN114921766B (en) * | 2022-05-26 | 2023-10-13 | 太原理工大学 | Diamond/metal composite cooling fin and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2645712B2 (en) | 1997-08-25 |
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