JPH0723278B2 - Diamond thin film forming method - Google Patents
Diamond thin film forming methodInfo
- Publication number
- JPH0723278B2 JPH0723278B2 JP8462786A JP8462786A JPH0723278B2 JP H0723278 B2 JPH0723278 B2 JP H0723278B2 JP 8462786 A JP8462786 A JP 8462786A JP 8462786 A JP8462786 A JP 8462786A JP H0723278 B2 JPH0723278 B2 JP H0723278B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- diamond thin
- amorphous carbon
- film
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ダイヤモンド薄膜の形成方法に関する。The present invention relates to a method for forming a diamond thin film.
例えば耐摩耗性の良好な切削材料、高効率の放熱材料又
は耐蝕性のコーティングを得るため、種々の基体材料に
多結晶のダイヤモンドの薄膜を形成することが知られて
おり、従来は公知のCVD法やイオン化蒸着法によって基
体材料の表面に直接ダイヤモンド薄膜を成長させるよう
にして、ダイヤモンド薄膜を基体材料の表面に形成して
いた。For example, it is known to form a thin film of polycrystalline diamond on various substrate materials in order to obtain a cutting material having good wear resistance, a highly efficient heat dissipation material or a corrosion resistant coating, and conventionally known CVD The diamond thin film is formed on the surface of the substrate material by directly growing the diamond thin film on the surface of the substrate material by the method or ionization deposition method.
しかしながら、上記従来技術によれば、使用できる基体
材料が、Si,SiC,Mo,W,Ta,Nb,C等に限定されてしまい、
他の多くの基体材料にダイヤモンド薄膜を形成すること
ができないと云う問題点がある他、ダイヤモンド薄膜が
形成される基体材料の表面をダイヤモンドペーストによ
って研磨する等の前処理が必要であり、更に、ダイヤモ
ンド薄膜が粒子状に成長するため、ダイヤモンド薄膜の
基体材料に対する付着強度やダイヤモンド薄膜の表面粗
度に解決すべき問題があった。However, according to the above-mentioned conventional technique, the usable substrate material is limited to Si, SiC, Mo, W, Ta, Nb, C, etc.,
In addition to the problem that the diamond thin film cannot be formed on many other base materials, pretreatment such as polishing the surface of the base material on which the diamond thin film is formed with a diamond paste is necessary. Since the diamond thin film grows into particles, there are problems to be solved in the adhesion strength of the diamond thin film to the base material and the surface roughness of the diamond thin film.
本発明は、上述の事柄に留意してなされたもので、その
目的とするところは、多くの種類の基体材料の表面に、
研磨等の前処理を施さなくても強固かつ均一にダイヤモ
ンド薄膜を形成し得る方法を提供することにある。The present invention has been made with the above matters in mind, and its purpose is to provide a surface for many types of substrate materials,
It is an object of the present invention to provide a method capable of forming a diamond thin film firmly and uniformly without performing a pretreatment such as polishing.
上述の目的を達成するため、本発明に係るダイヤモンド
薄膜の形成方法は、基体材料の表面にアモルファスカー
ボン膜を形成し、更に、該アモルファスファスカーボン
膜の表面にダイヤモンド薄膜を成長させるようにした点
に特徴がある。In order to achieve the above-mentioned object, the method for forming a diamond thin film according to the present invention is such that an amorphous carbon film is formed on the surface of a substrate material, and further a diamond thin film is grown on the surface of the amorphous fas carbon film. Is characterized by.
以下、本発明の実施例を図面を参照しながら説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明に係るダイヤモンド薄膜の形成方法を説
明するための図で、先ず、所定寸法に切断された基体材
料１を用意する（同図（Ａ）参照）。この基体材料１の
表面に、イオンプレーティング（イオン化メッキ）法又
はイオンビームスパッタ法により、大気圧〜10-4tollの
圧力下において、アモルファスカーボン薄膜２を形成す
る（同図（Ｂ）参照）。このとき用いられる膜材料はグ
ラファイトである。又、基体材料１の温度は室温〜150
℃に保持される。このようにして形成されるアモルファ
スカーボン膜２の膜厚は0.01〜１ミクロンである。FIG. 1 is a diagram for explaining a method for forming a diamond thin film according to the present invention. First, a substrate material 1 cut into a predetermined size is prepared (see FIG. 1A). An amorphous carbon thin film 2 is formed on the surface of the base material 1 by an ion plating (ionization plating) method or an ion beam sputtering method under a pressure of atmospheric pressure to 10 −4 toll (see FIG. 2B). . The film material used at this time is graphite. The temperature of the base material 1 is room temperature to 150.
Hold at ℃. The amorphous carbon film 2 thus formed has a thickness of 0.01 to 1 micron.
尚、前記アミルファスカーボン膜２の形成方法として上
記方法の他、スパッタ法やCVD法があり、スパッタ法の
場合、膜材料や形成条件は前記イオンプレーティング法
等と同様であり、又、CVD法の場合、膜材料としてはメ
タン、プロパン、ベンゼン等の炭化水素やエチルアルコ
ール等の有機化合物を用い、前記と同様の条件下で行
う。In addition to the above methods, there are a sputtering method and a CVD method as the method of forming the amyl-fus carbon film 2. In the case of the sputtering method, the film material and the forming conditions are the same as those of the ion plating method and the like. In the case of the method, a hydrocarbon such as methane, propane, benzene or the like or an organic compound such as ethyl alcohol is used as the film material and is carried out under the same conditions as described above.
次いで、熱フィラメントCVD法やマイクロプラズマCVD法
等のCVD法やイオン化蒸着法により、大気圧〜10-2toll
の圧力下において、前記アモルファスカーボン薄膜２の
表面にダイヤモンド薄膜３を成長させることによりダイ
ヤモンド薄膜３を基体材料１に形成する（同図（Ｃ）参
照）。このとき用いられる膜材料はメタン、プロパン、
ベンゼン等の炭化水素やエチルアルコール等の有機化合
物である。又、基体材料１の温度は400〜1000℃に保持
される。このようにして形成されるダイヤモンド薄膜３
の膜厚は１〜20ミクロンである。Then, by a CVD method such as a hot filament CVD method or a microplasma CVD method or an ionization deposition method, atmospheric pressure to 10 -2 toll
Under this pressure, the diamond thin film 3 is grown on the surface of the amorphous carbon thin film 2 to form the diamond thin film 3 on the base material 1 (see FIG. 2C). Membrane materials used at this time are methane, propane,
Hydrocarbons such as benzene and organic compounds such as ethyl alcohol. The temperature of the base material 1 is maintained at 400 to 1000 ° C. Diamond thin film 3 thus formed
Has a film thickness of 1 to 20 microns.
而して、上記イオンプレーティング法等によって形成さ
れたアモルファスカーボン薄膜２は、それが付着する下
地（この場合は、基体材料１）に対する選択性がなく、
しかも下地に対する付着力が極めて大きいので、従来方
法では困難であったFe,Ni,ステンレス,WCの如き耐摩耗
性に優れた基体材料１に対してもアモルファスカーボン
薄膜２を介してダイヤモンド薄膜３を形成することがで
きるようになったのである。Thus, the amorphous carbon thin film 2 formed by the ion plating method or the like has no selectivity with respect to the base (in this case, the base material 1) to which it adheres,
Moreover, since the adhesion to the substrate is extremely large, the diamond thin film 3 can be formed through the amorphous carbon thin film 2 even on the base material 1 having excellent wear resistance such as Fe, Ni, stainless steel, and WC, which has been difficult by the conventional method. It was possible to form.
そして、前記ダイヤモンド薄膜３はアモルファスカーボ
ン薄膜２上では膜状に成長し、アモルファスカーボン薄
膜２に対する付着力も大きいので、研磨等の前処理を施
さなくても所望のダイヤモンド薄膜３を多くの種類の基
体材料１に形成することができる。Since the diamond thin film 3 grows like a film on the amorphous carbon thin film 2 and has a large adhesive force with respect to the amorphous carbon thin film 2, many kinds of desired diamond thin films 3 can be obtained without pretreatment such as polishing. It can be formed on the base material 1.
第２図はダイヤモンド薄膜がSi基板の鏡面研磨面上には
全く成長しないことにより、ダイヤモンド薄膜を選択成
長させ得ることを示すもので、先ず、公知の方法によっ
て基体材料であるSi基板４上に、フォトレジストより成
るレジストパターン５を形成する（同図（Ａ）参照）。FIG. 2 shows that the diamond thin film can be selectively grown on the mirror-polished surface of the Si substrate, so that the diamond thin film can be selectively grown on the Si substrate 4, which is a base material, by a known method. A resist pattern 5 made of photoresist is formed (see FIG. 3A).
次に、前記レジストパターン５上からイオンプレーティ
ング法又はイオンビームスパッタ法によって、Si基板４
上にアモルファスカーボン薄膜６を形成する（同図
（Ｂ）参照）。Next, the Si substrate 4 is formed on the resist pattern 5 by an ion plating method or an ion beam sputtering method.
An amorphous carbon thin film 6 is formed on it (see FIG. 2B).
そして、薬品処理によってアモルファスカーボン薄膜６
より成るカーボンパターン７を形成する（同図（Ｃ）参
照）。Then, the amorphous carbon thin film 6 is processed by chemical treatment.
A carbon pattern 7 is formed (see FIG. 7C).
最後に、CVD法やイオン化蒸着法によってダイヤモンド
薄膜８を前記カーボンパターン７上に成長させる（同図
（Ｄ）参照）。Finally, the diamond thin film 8 is grown on the carbon pattern 7 by the CVD method or the ionization vapor deposition method (see FIG. 3D).
以上説明したように、本発明に係るダイヤモンド薄膜の
形成方法は、基体材料の表面にアモルファスカーボン膜
を形成し、更に、該アモルファスカーボン膜の表面にダ
イヤモンド薄膜を成長させるようにしているので、多く
の種類の基体材料の表面に、研磨等の前処理を施さなく
ても強固かつ均一にダイヤモンド薄膜を形成することが
できる。As described above, in the method for forming a diamond thin film according to the present invention, an amorphous carbon film is formed on the surface of the base material, and further, the diamond thin film is grown on the surface of the amorphous carbon film. A strong and uniform diamond thin film can be formed on the surface of the substrate materials of the above types without performing pretreatment such as polishing.
第１図、第２図はそれぞれ本発明に係るダイヤモンド薄
膜の形成方法を説明するためのプロセス図である。 1,4……基体材料、2,6……アモルファスカーボン薄膜、
3,8……ダイヤモンド薄膜。1 and 2 are process diagrams for explaining the method for forming a diamond thin film according to the present invention. 1,4 …… Base material, 2,6 …… Amorphous carbon thin film,
3,8 …… Diamond thin film.
Claims (1)
を形成し、更に、該アモルファスカーボン膜の表面にダ
イヤモンド薄膜を成長させるようにしたことを特徴とす
るダイヤモンド薄膜の形成方法。1. A method for forming a diamond thin film, comprising forming an amorphous carbon film on the surface of a substrate material, and further growing a diamond thin film on the surface of the amorphous carbon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8462786A JPH0723278B2 (en) | 1986-04-11 | 1986-04-11 | Diamond thin film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8462786A JPH0723278B2 (en) | 1986-04-11 | 1986-04-11 | Diamond thin film forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62241898A JPS62241898A (en) | 1987-10-22 |
| JPH0723278B2 true JPH0723278B2 (en) | 1995-03-15 |
Family
ID=13835913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8462786A Expired - Fee Related JPH0723278B2 (en) | 1986-04-11 | 1986-04-11 | Diamond thin film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0723278B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63102801A (en) * | 1986-10-21 | 1988-05-07 | Idemitsu Petrochem Co Ltd | Diamond tool |
| JP2679067B2 (en) * | 1987-12-15 | 1997-11-19 | 株式会社日本自動車部品総合研究所 | Manufacturing method of substrate with diamond film |
| JPH02263789A (en) * | 1989-03-31 | 1990-10-26 | Kanagawa Pref Gov | Silicon substrate having diamond single crystalline film and its production |
| US5075094A (en) * | 1990-04-30 | 1991-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Method of growing diamond film on substrates |
| JP4793531B2 (en) * | 2001-07-17 | 2011-10-12 | 住友電気工業株式会社 | Amorphous carbon coating, method for producing amorphous carbon coating, and coating member for amorphous carbon coating |
-
1986
- 1986-04-11 JP JP8462786A patent/JPH0723278B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62241898A (en) | 1987-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |