JPH01122043A - Method for crystallization of optical information recording medium - Google Patents
Method for crystallization of optical information recording mediumInfo
- Publication number
- JPH01122043A JPH01122043A JP62279233A JP27923387A JPH01122043A JP H01122043 A JPH01122043 A JP H01122043A JP 62279233 A JP62279233 A JP 62279233A JP 27923387 A JP27923387 A JP 27923387A JP H01122043 A JPH01122043 A JP H01122043A
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- film
- flash
- optical information
- information recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 31
- 230000003287 optical effect Effects 0.000 title claims description 19
- 238000002425 crystallisation Methods 0.000 title claims description 15
- 230000008025 crystallization Effects 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 abstract description 17
- 229910052724 xenon Inorganic materials 0.000 abstract description 12
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 12
- 230000003685 thermal hair damage Effects 0.000 abstract description 7
- 230000003068 static effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 46
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000820 replica moulding Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光学的情報記録媒体において結晶状態を得る
方法に係り、特に、該媒体全体を一括して結晶質状態に
するに好適な結晶化方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for obtaining a crystalline state in an optical information recording medium, and in particular, a method for obtaining a crystalline state in an optical information recording medium, and in particular, a method for obtaining a crystalline state in an optical information recording medium. Regarding the conversion method.
光学的情報記録媒体に情報を記録するには、例えばレー
ザ光等の光ビームエネルギ等を上記媒体に与えて、該媒
体の一つの構造状態を他の構造状態に物理的に変化させ
て行なうことができる。この様な情報記録媒体としては
、カルコゲン化物が知られており、カルコゲン化物は例
えば非晶質状態と結晶質状態の異なる２つの構造をとる
ことができる。例えば、光ビームを上記媒体に照射し、
加熱昇温し除冷すると、該媒体は結晶化し、また、パル
ス幅の短い光ビームを照射し、急熱急冷すると非晶質状
態となる。In order to record information on an optical information recording medium, energy of a light beam such as a laser beam is applied to the medium to physically change one structural state of the medium to another structural state. Can be done. Chalcogenides are known as such information recording media, and chalcogenides can have two different structures, for example, an amorphous state and a crystalline state. For example, irradiating the medium with a light beam,
When the medium is heated and then slowly cooled, it becomes crystallized, and when it is irradiated with a light beam with a short pulse width and rapidly heated and cooled, it becomes an amorphous state.
上記記録媒体を用いた時の記録方法として、非晶質状態
から結晶質状態に変化させて記録を行なう方法と、結晶
質状態から非晶質状態に変化させて記録を行なう方法が
ある。例えば、１μｍ以下の短波長記録を行なう時には
、急熱急冷により得られる非晶質状態に変化させて記録
を行なう後者の方法が、記録時におけるピット間の熱的
干渉が少なく、有利である。しかし、情報記録媒体の製
造時には通常、該媒体は非晶質状態であるため。As recording methods when using the above-mentioned recording medium, there are two methods: a method in which recording is performed by changing from an amorphous state to a crystalline state, and a method in which recording is performed by changing from a crystalline state to an amorphous state. For example, when recording short wavelengths of 1 μm or less, the latter method, in which recording is performed by changing the material to an amorphous state obtained by rapid heating and cooling, is advantageous because there is less thermal interference between pits during recording. However, when an information recording medium is manufactured, the medium is usually in an amorphous state.
上記記録方法を用いる場合、該媒体をあらかじめ結晶質
状態にしておく必要がある。When using the above recording method, it is necessary to bring the medium into a crystalline state in advance.
上記の構造変化を生じせしめる方法としては、特公昭４
７−２６８９７号公報に示されであるように、種々形態
のエネルギーを使用する方法が挙げられており、例えば
、電気エネルギー、輻射熱閃光ランプの光、レーザ光束
のエネルギ等の形における電磁エネルギの様なビーム状
エネルギ、電子線や陽子線の様な粒子線エネルギ等があ
る。As a method for causing the above structural change,
As shown in Japanese Patent No. 7-26897, there are methods using various forms of energy, such as electromagnetic energy in the form of electrical energy, radiant heat flash lamp light, laser beam energy, etc. There are beam energies such as beam energy, and particle beam energies such as electron beams and proton beams.
上記エネルギを印加する具体的な方法として、例えば恒
温槽中に情報記録媒体を放置し、該媒体全体を加熱する
方法、あるいは、特開昭６１−２０８６４８号公報記載
のように、上記加熱と同時に電気エネルギを印加する方
法等が提案されている。しかし、上記方法は情報記録媒
体を１００℃〜１５０℃以上の高温にさらす必要があり
、アクリル樹脂やポリカーボネート樹脂等のプラスチッ
ク基板を用いた情報記録媒体には、変形の点から、適用
することは困難であった。さらにその他の方法において
も、情報記録媒体の全体を一括して。As a specific method of applying the above-mentioned energy, for example, a method of leaving the information recording medium in a constant temperature bath and heating the entire medium, or a method of simultaneously applying the above-mentioned energy as described in Japanese Patent Application Laid-Open No. 61-208648. Methods of applying electrical energy and the like have been proposed. However, the above method requires exposing the information recording medium to high temperatures of 100°C to 150°C or higher, and cannot be applied to information recording media using plastic substrates such as acrylic resin or polycarbonate resin from the viewpoint of deformation. It was difficult. Furthermore, in other methods as well, the entire information recording medium is collected at once.
あらかじめ結晶質状態にしておくための有効な方法につ
いては充分検討されておらず、生産性の良い方法は見い
出されていなかった。An effective method for preparing the crystalline state in advance has not been sufficiently studied, and no method with good productivity has been found.
我々は、高出力閃光照射により情報記録媒体の全体を一
括して、あらかじめ結晶質状態にできることを発見し、
検討を進めている。この方法について説明する。第２図
に高出力閃光放射装置により、光ディスクに光線を照射
している様子を示す。We have discovered that the entire information recording medium can be brought into a crystalline state in advance by irradiating it with high-power flash light.
We are currently considering this. This method will be explained. FIG. 2 shows how a high-power flashlight emitting device irradiates an optical disc with a beam of light.
５は高出力閃光放射管であり、キセノンランプを用いて
いる。光デイスク用記録媒体は主に半導体レーザ波長域
で大きなエネルギ吸収を得ているために、閃光ランプと
しては、分光エネルギ分布が半導体レーザ波長である８
３０ｎｍ付近に伸びていることが必要である。キセノン
ランプの分光エネルギ分布が自然光に近いばかりでなく
、そのエネルギ分布は半導体レーザ波長域まで充分に伸
びており、好適なランプである。第３図に、第２図に示
した閃光放射管の動作回路例を示す。５はキセノンラン
プ、Ｃ工、Ｃ２はコンデンサ、Ｔｒはトランス、Ｒ１，
Ｒ２は抵抗、Ｓはサイリスタ、１２はスイッチ回路であ
る。Ｃ１はメインコンデンサであり、充電回路（図示せ
ず）により所定の電圧まで充電されるようになっている
。メインコンデンサＣ１の一方の電極は、キセノンラン
プ５の陽極９に接続され、他方の電極は陰極１０に接続
されている。スイッチ回路１２より、サイリスタＳのゲ
ート端子にオン信号を与えると、トランスＴｒにコンデ
ンサＣ２の放電による電流が流れ、Ｔｒの昇圧作用によ
り高電圧がキセノンランプ５のトリガ電極１１に印加さ
れる。これにより、キセノンランプ５内のガスがイオン
化され、内部抵抗が減少し、該キセノンランプ５の両極
間に一瞬に放電が行なねれて発光がなされる。この時の
発光時間は０ 、５ｍ５ｅｃ〜２ｍ５ｅｃである。以上
、高出力閃光放射装置について説明した。次に、光デイ
スク製造工程の、どこに上記結晶化工程を挿入するかに
ついて述べる。Reference numeral 5 is a high-output flash tube, which uses a xenon lamp. Since optical disk recording media mainly absorb large amounts of energy in the semiconductor laser wavelength range, flash lamps have a spectral energy distribution that is equal to the semiconductor laser wavelength.
It is necessary that it extends around 30 nm. The spectral energy distribution of a xenon lamp is not only close to that of natural light, but also extends sufficiently to the wavelength range of a semiconductor laser, making it a suitable lamp. FIG. 3 shows an example of an operating circuit for the flash tube shown in FIG. 2. 5 is a xenon lamp, C is a condenser, C2 is a capacitor, Tr is a transformer, R1,
R2 is a resistor, S is a thyristor, and 12 is a switch circuit. C1 is a main capacitor, which is charged to a predetermined voltage by a charging circuit (not shown). One electrode of the main capacitor C1 is connected to the anode 9 of the xenon lamp 5, and the other electrode is connected to the cathode 10. When an on signal is applied to the gate terminal of the thyristor S from the switch circuit 12, a current flows through the transformer Tr due to the discharge of the capacitor C2, and a high voltage is applied to the trigger electrode 11 of the xenon lamp 5 due to the boosting action of the Tr. As a result, the gas within the xenon lamp 5 is ionized, the internal resistance is reduced, and a discharge is instantaneously generated between the two poles of the xenon lamp 5 to emit light. The light emission time at this time is 0.5 m5 ec to 2 m5 ec. The high-power flash emission device has been described above. Next, it will be described where in the optical disk manufacturing process the crystallization process is inserted.
第４図に、光デイスク製造工程（レプリカ成形以後）を
示す。まず、記録膜形成後１３で結晶化を行った。基板
はＰＣ１記録膜は５ｂ−８ｓ−Ｂｉ系である。記録膜の
結晶化温度が１８０℃のディスフにおいては、記録膜を
結晶化させうる閃光放射パワでは、加熱された記録膜の
熱拡散により。FIG. 4 shows the optical disk manufacturing process (after replica molding). First, after forming the recording film, crystallization was performed in step 13. The substrate is PC1 and the recording film is 5b-8s-Bi system. In a disk where the crystallization temperature of the recording film is 180° C., the flash radiation power that can crystallize the recording film is due to thermal diffusion of the heated recording film.
基板の記録膜との界面が溶融し、ピットが消失してしま
った。１５．１６の接着膜形成後、貼り合わせ後におい
ては、閃光放射パワが不足し結晶化できなかったが、基
板は熱的ダメージを受け、大きな反りを生じた。保護膜
形成後１４においては、閃光放射後、保護膜の厚さによ
り、保護膜にキレツが生じたりした。このため、保護膜
厚値を最適化したところ、閃光放射回数が増加し、保護
膜。The interface between the substrate and the recording film melted, and the pits disappeared. After forming the adhesive film in 15.16 and bonding, the flash radiation power was insufficient and crystallization could not be achieved, but the substrate was thermally damaged and significantly warped. After forming the protective film 14, cracks occurred in the protective film after the flash radiation, depending on the thickness of the protective film. For this reason, when we optimized the protective film thickness value, the number of flash emissions increased and the protective film decreased.
基板の記録膜との界面で熱的ダメージが大きくなり、保
護膜と記録膜間の密着性低下、基板からの記録膜ハクリ
といった問題が生じた。また同じ理由により基板のに大
きな反りが生じた。Thermal damage increased at the interface between the substrate and the recording film, resulting in problems such as reduced adhesion between the protective film and the recording film and peeling of the recording film from the substrate. Also, for the same reason, large warpage occurred in the substrate.
上記従来技術は、閃光照射による記録膜近接層への熱的
ダメージについては配慮されておらず、保護膜と記録膜
の密着性低下、基板からの記録膜ハクリ等の開運があっ
た。The above-mentioned conventional technology does not take into account thermal damage to the layer adjacent to the recording film due to flash irradiation, resulting in poor adhesion between the protective film and the recording film and peeling of the recording film from the substrate.
本発明の目的は、小さな閃光照射パワにより、記録膜近
接層への熱的ダメージを低減し、上記問題点を克服する
ことのできる光学的情報記録媒体の結晶化方法を提供す
ることにある。An object of the present invention is to provide a method for crystallizing an optical information recording medium that can overcome the above-mentioned problems by reducing thermal damage to a layer adjacent to a recording film using a small flash irradiation power.
上記目的は、記録膜をあらかじめ加熱した状態で閃光照
射を行なうことにより達成される。The above object is achieved by irradiating the recording film with flash light in a preheated state.
保護膜形成後、閃光照射した場合、閃光により記録膜は
瞬時に昇温する。これと同時に記録膜界面の保護膜、基
板面に熱拡散が生じる。記録膜を結晶化するには、加熱
時の昇温速度、および結晶化温度以上の温度の保持時間
が１重要な要因となる。あらかじめ、記録膜を加熱する
ことにより記録膜界面の基板面、保護膜面が加熱され高
温となる。この状態で、閃光を照射すると、保護膜面。When a flash of light is irradiated after the protective film is formed, the temperature of the recording film is instantaneously raised by the flash of light. At the same time, thermal diffusion occurs in the protective film at the recording film interface and the substrate surface. In order to crystallize a recording film, the rate of temperature increase during heating and the time for which the temperature is maintained at or above the crystallization temperature are important factors. By heating the recording film in advance, the substrate surface and the protective film surface at the recording film interface are heated to a high temperature. In this state, when a flash is irradiated, the protective film surface will be exposed.
基板面への記録膜からの熱拡散が低減される。これは、
記録膜の最高到達温度が、この予備加熱をしないものに
比べ高くなることを示す。すなわち予備加熱をすること
により、しないのと比べ、小さい閃光照射パワで結晶状
態へ転移させることができ、基板、保護膜に対する熱的
ダメージも低減でき、前記問題点が解決できる。Heat diffusion from the recording film to the substrate surface is reduced. this is,
This shows that the maximum temperature of the recording film is higher than that without preheating. That is, by performing preheating, the transition to a crystalline state can be achieved with a smaller flash irradiation power than without preheating, and thermal damage to the substrate and protective film can also be reduced, thus solving the above-mentioned problems.
〔実施例１〕 以下本発明の一実施例を説明する。[Example 1] An embodiment of the present invention will be described below.
第１図は、本発明の実施に際して用いる結晶化装置であ
る。１は加熱ランプ（消費電力３００Ｗ）。FIG. 1 shows a crystallization apparatus used in carrying out the present invention. 1 is a heating lamp (power consumption 300W).
２は反射鏡、３は光線、４は透明板、５は閃光放射ラン
プ（キセノン）、６はＰＣ基板上に５ｂ−８ｅ−Ｂｉ系
記録膜、保護膜の形成されたディスク（光学的情報記録
媒体）、７はディスク送リベルトである。本装置は、予
備加熱部と高出力閃光放射部の２つに分けられる。高出
力閃光放射部は、第２図に示したものと同じであり、そ
の動作は第３図に示しである。高出力閃光放射用のキセ
ノンランプ５の照射光線エネルギーＷ （Ｊ）は、ラン
プ発光効率η、キセノンランプに接続されるメインコン
デサの容量Ｃ（Ｆ）と、充電々圧Ｖ （ｖ）により
Ｗ＝ηｘ−ｃｖ”であたえられる。発光効率ηはランプ
によって異なるために１本実施例ではうンプの入力エネ
ルギーＣｖ２を目安としている。2 is a reflecting mirror, 3 is a light beam, 4 is a transparent plate, 5 is a flash emission lamp (xenon), and 6 is a disk (optical information recording) on which a 5b-8e-Bi recording film and a protective film are formed on a PC board. (medium), 7 is a disc feed belt. The device is divided into two parts: a preheating section and a high power flash emitting section. The high power flash emitter is the same as that shown in FIG. 2, and its operation is shown in FIG. The irradiation light energy W (J) of the xenon lamp 5 for high-output flash emission is determined by the lamp luminous efficiency η, the capacity C (F) of the main capacitor connected to the xenon lamp, and the charging pressure V (v). Since the luminous efficiency η differs depending on the lamp, in this embodiment, the input energy Cv2 of the pump is used as a guide.
予備加熱用白熱ランプ１は、第５図に示す特性を示す。The preheating incandescent lamp 1 exhibits the characteristics shown in FIG.
ディスク６は、ＰＣ射出成形基板上に、５ｂ−８ｅ−Ｂ
ｉ系記録膜をスパッタリングにより形成したもので、そ
の組成はＳｂ：Ｓｅ：Ｂｉ＝４５ ： ４５ ： １０
である。この膜の結晶化温度は、１８０℃である。この
記録膜上に、有機保護膜（大日本インキ５Ｄ−１７）を
約８０μｍ形成しである。Disk 6 is 5b-8e-B on PC injection molded board.
An i-based recording film is formed by sputtering, and its composition is Sb:Se:Bi=45:45:10
It is. The crystallization temperature of this film is 180°C. On this recording film, an organic protective film (Dainippon Ink 5D-17) was formed to a thickness of about 80 μm.
次に、本装置を用いての、結晶化アルゴリズムを述べる
。まず、ディスク６を、第１図に示しである様に、予備
加熱白熱ランプ１と閃光放射キセノンランプ５の間に静
止する。そして予備加熱を３５秒行ない、それの終了と
同時に閃光放射パワ１５００ （Ｊ）で閃光照射を行な
い結晶化させる。Next, a crystallization algorithm using this apparatus will be described. First, the disk 6 is brought to rest between the preheated incandescent lamp 1 and the flash-emitting xenon lamp 5, as shown in FIG. Then, preheating is performed for 35 seconds, and at the same time as the preheating is completed, flash irradiation is performed at a flash radiation power of 1500 (J) to crystallize.
本発明によれば、１回の閃光照射により結晶化されかつ
、基板の反り、保護膜と記録膜の密着性低下といった問
題が解消され、良好なディスクを作製できる。According to the present invention, it is possible to produce a good disk, which is crystallized by one flash irradiation, solves problems such as warpage of the substrate, and decreased adhesion between the protective film and the recording film.
〔実施例２〕
前記実施例１においては、予備加熱を、白熱ランプ光を
、３５秒照射することにより行なった。[Example 2] In Example 1, preheating was performed by irradiating incandescent lamp light for 35 seconds.
本実施例では、予備加熱を、恒温槽内で行ない、閃光照
射もその中で行なう。この様子を第６図に示す。１７は
恒温槽、１８は閃光放射部、６はディスク、１９はベル
トコンベア、２０は遮光板である。恒温槽１７を、１２
０℃にして、ディスク６を加熱する。本実施例では、恒
温槽長さ２ｍ、ベルト送り速さ、５ ｃｘ ／ Ｓとし
た。この様な機構で、閃光照射パワ１５００Ｊで光を照
射したところ、１回で結晶化でき、実施例１と同様の効
果を得た。In this embodiment, preheating is performed in a constant temperature bath, and flash irradiation is also performed therein. This situation is shown in FIG. 17 is a constant temperature bath, 18 is a flash light emitting unit, 6 is a disk, 19 is a belt conveyor, and 20 is a light shielding plate. Constant temperature baths 17 and 12
The disc 6 is heated to 0°C. In this example, the length of the constant temperature oven was 2 m, and the belt feeding speed was 5 cx/S. When light was irradiated with a flash irradiation power of 1500 J using such a mechanism, crystallization could be achieved in one go, and the same effect as in Example 1 was obtained.
〔比較例１〕
実施例１における予備加熱時間を１０秒とした場合を比
較例として示す。白熱ランプ光を１０秒照射することに
より、膜表面は約５０℃になる。[Comparative Example 1] A case where the preheating time in Example 1 was changed to 10 seconds will be shown as a comparative example. By irradiating the film with incandescent lamp light for 10 seconds, the temperature of the film surface becomes approximately 50°C.
−この時閃光照射パワ１５００Ｊで内光照射を行なった
ところ、透過率は減少したものの不充分な値であり、完
全に結晶化できていなかった。このため、２回閃光照射
を行なった。２回目にして完全に結晶化した。この時の
ディスクには、実施例１に比べ大きな反りが生じた。す
なわち、予備加熱をすることにより、閃光照射パワを有
効に結晶化のためのエネルギとして活用できるために小
さな閃光照射パワでも、結晶化が可能となり、基板。- At this time, internal light irradiation was performed with a flash irradiation power of 1500 J, and although the transmittance decreased, it was an insufficient value, and complete crystallization was not achieved. For this reason, flash irradiation was performed twice. Complete crystallization occurred in the second attempt. At this time, a larger warp occurred in the disk than in Example 1. In other words, by preheating, the flash irradiation power can be effectively used as energy for crystallization, making it possible to crystallize the substrate even with a small flash irradiation power.
保原膜への熱的ダメージも軽減できる。また今回はＰＣ
基板を用いたために、その熱変形温度１３０℃以上に予
備加熱することはできないが、ガラス基板の場合には、
より高温にでき、結晶化温度のより高い記録膜について
も予備加熱は有効な手段となる。Thermal damage to the plasma membrane can also be reduced. Again, this time on PC
Because a substrate is used, it is not possible to preheat it to a heat distortion temperature of 130°C or higher, but in the case of a glass substrate,
Preheating is also an effective means for recording films that can be heated to a higher temperature and have a higher crystallization temperature.
本発明によれば、高出力閃光照射により、ＰＣ基板上に
成膜された非晶質薄膜を結晶化させるのに、高出力閃光
照射による記録膜界面における。According to the present invention, when an amorphous thin film formed on a PC substrate is crystallized by high-power flash irradiation, the high-power flash irradiation is performed at the recording film interface.
熱的ダメージを低減しかつ、容易に結晶化膜を得ること
ができる。It is possible to reduce thermal damage and easily obtain a crystallized film.
第１図は本発明の実施に際して用いる装置例を示す説明
図、第２図は高出力閃光照射部を示す説明図、第３図は
高出力閃光照射部の発光回路を示す回路図、第４図は光
学的情報記録媒体としてのディスク製造プロセスのフロ
ーチャート、第５図は白熱ランプ光照射時の温度と時間
の関係を示す特性図、第６図は本発明の実施に際して用
いる他の装置例を示す説明図、である。
１・・・加熱ランプ、５・・・閃光ランプ、１７・・・
恒温槽。FIG. 1 is an explanatory diagram showing an example of a device used in carrying out the present invention, FIG. 2 is an explanatory diagram showing a high-output flash irradiation section, FIG. 3 is a circuit diagram showing a light emitting circuit of the high-output flash irradiation section, and FIG. The figure is a flowchart of the manufacturing process of a disk as an optical information recording medium, Figure 5 is a characteristic diagram showing the relationship between temperature and time during incandescent lamp light irradiation, and Figure 6 is an example of another apparatus used in carrying out the present invention. FIG. 1...Heating lamp, 5...Flash lamp, 17...
Constant temperature bath.
Claims (1)
ら他方の状態へ変わり得る記録媒体を基板上に形成して
成り、前記記録媒体を前記２つの状態の何れか一方から
他方へ変えることにより情報の記録を行う光学的情報記
録媒体において、前記記録媒体を予め一括して結晶状態
に導く光学的情報記録媒体の結晶化方法において、前記
記録媒体を予め加熱し、その後、高出力の閃光光線を該
記録媒体に照射することにより該記録媒体を一括して結
晶化することを特徴とする光学的情報記録媒体の結晶化
方法。 ２、特許請求の範囲第１項記載の光学的情報記録媒体の
結晶化方法において、前記記録媒体の加熱を光により行
うことを特徴とする光学的情報記録媒体の結晶化方法。 ３、特許請求の範囲第１項記載の光学的情報記録媒体の
結晶化方法において、前記記録媒体の加熱を加熱された
気体を介して行うことを特徴とする光学的情報記録媒体
の結晶化方法。 ４、特許請求の範囲第１項記載の光学的情報記録媒体の
結晶化方法において、前記記録媒体の加熱温度を前記基
板の熱変形温度より低くすることを特徴とする光学的情
報記録媒体の結晶化方法。 ５、特許請求の範囲第４項記載の光学的情報記録媒体の
結晶化方法において、前記基板がＰＣ基板から成り、前
記記録媒体の加熱温度が１２０℃以下であることを特徴
とする光学的情報記録媒体の結晶化方法。[Claims] 1. A recording medium capable of changing from one state to the other between an amorphous state and a crystalline state is formed on a substrate, and the recording medium is changed between the two states. In an optical information recording medium in which information is recorded by changing from one to the other, a crystallization method for an optical information recording medium in which the recording medium is brought into a crystalline state all at once. 1. A method for crystallizing an optical information recording medium, comprising heating the recording medium and then irradiating the recording medium with a high-output flash beam to crystallize the recording medium all at once. 2. A method for crystallizing an optical information recording medium according to claim 1, wherein the recording medium is heated with light. 3. A method for crystallizing an optical information recording medium according to claim 1, characterized in that the recording medium is heated via heated gas. . 4. A method for crystallizing an optical information recording medium according to claim 1, wherein the heating temperature of the recording medium is lower than the thermal deformation temperature of the substrate. method. 5. The method for crystallizing an optical information recording medium according to claim 4, wherein the substrate is a PC board, and the heating temperature of the recording medium is 120° C. or less. Method for crystallizing recording media.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62279233A JPH0770093B2 (en) | 1987-11-06 | 1987-11-06 | Crystallization method of optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62279233A JPH0770093B2 (en) | 1987-11-06 | 1987-11-06 | Crystallization method of optical information recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01122043A true JPH01122043A (en) | 1989-05-15 |
| JPH0770093B2 JPH0770093B2 (en) | 1995-07-31 |
Family
ID=17608290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62279233A Expired - Fee Related JPH0770093B2 (en) | 1987-11-06 | 1987-11-06 | Crystallization method of optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770093B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5398579A (en) * | 1992-04-16 | 1995-03-21 | Bando Kiko Co., Ltd. | Glass plate cutting device |
| EP0790603A1 (en) * | 1996-02-16 | 1997-08-20 | Matsushita Electric Industrial Co., Ltd | Method and apparatus for initializing optical recording medium |
| EP1118988A1 (en) * | 1999-07-12 | 2001-07-25 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and method for initializing the same |
| WO2001037196A3 (en) * | 1999-11-16 | 2001-11-22 | Polaroid Corp | System and method for initializing phase change recording media |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6220155A (en) * | 1985-07-19 | 1987-01-28 | Fujitsu Ltd | Manufacture of optical disk |
| JPS62250533A (en) * | 1986-04-23 | 1987-10-31 | Toshiba Corp | Initial crystallization method for optical disk |
-
1987
- 1987-11-06 JP JP62279233A patent/JPH0770093B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6220155A (en) * | 1985-07-19 | 1987-01-28 | Fujitsu Ltd | Manufacture of optical disk |
| JPS62250533A (en) * | 1986-04-23 | 1987-10-31 | Toshiba Corp | Initial crystallization method for optical disk |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5398579A (en) * | 1992-04-16 | 1995-03-21 | Bando Kiko Co., Ltd. | Glass plate cutting device |
| US5857398A (en) * | 1992-04-16 | 1999-01-12 | Bando Kiko, Ltd. | Glass plate cutting device |
| EP0790603A1 (en) * | 1996-02-16 | 1997-08-20 | Matsushita Electric Industrial Co., Ltd | Method and apparatus for initializing optical recording medium |
| US6060221A (en) * | 1996-02-16 | 2000-05-09 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for initializing optical recording medium |
| EP1118988A1 (en) * | 1999-07-12 | 2001-07-25 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium and method for initializing the same |
| EP1118988A4 (en) * | 1999-07-12 | 2005-11-16 | Matsushita Electric Ind Co Ltd | Optical information recording medium and method for initializing the same |
| WO2001037196A3 (en) * | 1999-11-16 | 2001-11-22 | Polaroid Corp | System and method for initializing phase change recording media |
| US6587429B1 (en) | 1999-11-16 | 2003-07-01 | Polaroid Corporation | System and method for initializing phase change recording media |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0770093B2 (en) | 1995-07-31 |
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