JPH01120815A - Heating of semiconductor wafer - Google Patents
Heating of semiconductor waferInfo
- Publication number
- JPH01120815A JPH01120815A JP27950787A JP27950787A JPH01120815A JP H01120815 A JPH01120815 A JP H01120815A JP 27950787 A JP27950787 A JP 27950787A JP 27950787 A JP27950787 A JP 27950787A JP H01120815 A JPH01120815 A JP H01120815A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- low resistance
- heating
- resistance layer
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 230000006698 induction Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 150000002500 ions Chemical class 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 abstract description 38
- 239000007789 gas Substances 0.000 abstract description 6
- 239000010453 quartz Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- -1 phosphorus ions Chemical class 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔概要〕 半導体ウェハーの加熱方法に関し。[Detailed description of the invention] 〔overview〕 Regarding heating methods for semiconductor wafers.
該ウェハーに熱源の機能を付加することを目的とし。The purpose is to add a heat source function to the wafer.
該ウェハー上のエピタキシャル膜成長面と反対側の面に
不純物イオンを注入し、拡散熱処理により０．１Ωｃｍ
以下の抵抗率を持つ厚さ１μＩ以上の低抵抗層を形成し
て誘導加熱することにより、該ウェハーを加熱する構成
とする。Impurity ions are implanted on the surface opposite to the epitaxial film growth surface on the wafer, and a diffusion heat treatment is performed to reduce the thickness to 0.1 Ωcm.
The wafer is heated by forming a low resistance layer having a resistivity below and having a thickness of 1 μI or more and performing induction heating.
本発明は半導体ウェハーの加熱方法に係り、特に効率良
くしかも均一に該ウェハーを加熱する方法に関する。The present invention relates to a method of heating a semiconductor wafer, and particularly to a method of efficiently and uniformly heating the wafer.
第３図は従来のウェハー加熱方法を示す。化学的気相成
長法（ＣＶＤ法）等でウェハー表面にエピタキシャル膜
を成長させるプロセスにおいて。FIG. 3 shows a conventional wafer heating method. In the process of growing an epitaxial film on a wafer surface using chemical vapor deposition (CVD) or the like.
排気管１０から反応管４内の排気を行い１次いで反応管
４の中へガス流入管７から反応ガスを導入しながら誘導
加熱コイル８に高周波を加え、該反応管４の中に設置し
た石英ボード５上の炭素板９を誘導加熱し、そこからの
熱伝導によりウェーハｌを加熱していた。The inside of the reaction tube 4 is evacuated from the exhaust pipe 10, and then a high frequency is applied to the induction heating coil 8 while introducing the reaction gas into the reaction tube 4 from the gas inflow pipe 7. The carbon plate 9 on the board 5 was heated by induction, and the wafer l was heated by heat conduction from there.
しかし、従来知られている方法には、熱効率が悪く、さ
らにウェハーと炭素板の間に浮きを生じることがあり加
熱が必ずしも均一に行われないという問題があった。However, conventionally known methods have problems in that they have poor thermal efficiency and that floating may occur between the wafer and the carbon plate, so that heating is not necessarily uniform.
本発明の目的はウェハーを効率よ（、シかも均一に加熱
することにある。An object of the present invention is to efficiently and uniformly heat a wafer.
第１図に本発明の低抵抗層付きウェハーを示す。 FIG. 1 shows a wafer with a low resistance layer of the present invention.
・ ウェハー１上のエピタキシャル膜成長面３と反対側
の面に不純物イオンを注入し、拡散熱処理により０．１
Ω１以下の抵抗率を持つ厚さ１μ−以上の低抵抗層２を
形成して誘導加熱し、そこからの熱伝導で該ウェハー１
を加熱する。かくすることにより、上記問題点は解決さ
れる。- Impurity ions are implanted on the surface opposite to the epitaxial film growth surface 3 on the wafer 1, and a diffusion heat treatment is performed to reduce the
A low resistance layer 2 having a resistivity of Ω1 or less and a thickness of 1μ or more is formed and heated by induction, and the wafer 1 is heated by heat conduction from there.
heat up. By doing so, the above problem is solved.
ウェーハ裏面は本来、半導体装置の形成される面ではな
いので、そこに低抵抗層を形成して誘導加熱する熱源と
するのは該装置への影響がなく。Since the back surface of the wafer is not originally the surface on which semiconductor devices are formed, forming a low resistance layer there and using it as a heat source for induction heating has no effect on the device.
しかもこの熱源は該装置の形成される面に極めて接近し
ているので、加熱の効率が良く、均一に加熱できる。Moreover, since this heat source is very close to the surface on which the device is formed, the heating efficiency is high and uniform heating can be achieved.
誘導加熱の効果を得るためには、拡散深さが１μｍ以上
、抵抗率は０．１Ω１以下であることを要する。In order to obtain the effect of induction heating, the diffusion depth must be 1 μm or more and the resistivity must be 0.1Ω1 or less.
第２図に本発明の低抵抗付きウェハーを用いる加熱方法
を示す０反応管４の中の石英ボード５の上に低抵抗付き
ウェハー６を載せ、排気管１０から排気した後、ガス流
入管７から反応ガスを導入しつつ、誘導加熱コイル８に
よりウェハー１の裏面（半導体装置が形成される面と反
対側の面）に形成された低抵抗Ｎ２を誘導加熱する。低
抵抗層付きウェハーの作製は次の如くする。FIG. 2 shows a heating method using a low-resistance wafer of the present invention. A low-resistance wafer 6 is placed on a quartz board 5 in a reaction tube 4, and after exhausting air from an exhaust pipe 10, a gas inflow pipe 7 While introducing a reactive gas from the wafer 1, the low resistance N2 formed on the back surface of the wafer 1 (the surface opposite to the surface on which semiconductor devices are formed) is heated by induction using the induction heating coil 8. The wafer with a low resistance layer is manufactured as follows.
厚さ約５００μｍ、不純物濃度が１０１５０−３である
ｐ型Ｓｉウェハーの裏面にｎ型不純物を拡散させて低抵
抗層を形成する。このために、Ｐ＋ （燐イオン）を１
２０ｋｅＶのエネルギーで５ Ｘ Ｉ Ｑ Ｉ５ａｍ−
２イオン注入した後、窒素雰囲気中で１１００℃、１時
間のアニールをして、拡散深さ約３μｍ１表面濃度約Ｉ
Ｑ”ｃｍ−’の低抵抗層を形成する。この部分の比抵抗
は約ｌθ″″３Ω国である。 かくすることにより、ウ
ェハーを効率良くしかも均一に加熱することが出来る。A low resistance layer is formed by diffusing n-type impurities on the back surface of a p-type Si wafer having a thickness of about 500 μm and an impurity concentration of 10150-3. For this purpose, P+ (phosphorus ion) is
5 X I Q I5am- at an energy of 20 keV
After implanting 2 ions, annealing was performed at 1100°C for 1 hour in a nitrogen atmosphere to achieve a diffusion depth of about 3 μm1 and a surface concentration of about I.
A low resistance layer of Q"cm-' is formed. The specific resistance of this portion is about lθ""3Ω. By doing this, the wafer can be heated efficiently and uniformly.
本発明によれば、化学的気相成長法（ＣＶＤ法）等でウ
ェハー表面にエピタキシャル膜を成長させるプロセスに
おいて、ウェハーを効率良くしかも均一に加熱すること
ができる。また、従来ウェハー加熱に用いていた高周波
誘導加熱用炭素板が不用となるのでウェハーのセットは
石英ボードに載せるのみで簡単になり、しかも装置、ボ
ード等の軽量化が計れる。According to the present invention, a wafer can be efficiently and uniformly heated in a process of growing an epitaxial film on a wafer surface by chemical vapor deposition (CVD) or the like. Furthermore, since the high-frequency induction heating carbon plate conventionally used for wafer heating is no longer necessary, the wafer can be easily set by simply placing it on a quartz board, and the weight of the equipment, board, etc. can be reduced.
第１図は低抵抗層付きウェハー。 第２図は本発明の加熱方法 第３図は従来の加熱方法 である。 図において。 １はウェハー。 ２は低抵抗層。 ３はエピタキシャル膜成長面。 ４は反応管。 ５は石英ボード。 ６は低抵抗層付きウェハー。 ７はガス流入管。 ８は誘導加熱コイル。 ９は炭素板。 ｌＯは排気管 従４ミの刀ロ熱゛方−法 単３ 図 Figure 1 shows a wafer with a low resistance layer. Figure 2 shows the heating method of the present invention. Figure 3 shows the conventional heating method It is. In the figure. 1 is a wafer. 2 is a low resistance layer. 3 is the epitaxial film growth surface. 4 is a reaction tube. 5 is a quartz board. 6 is a wafer with a low resistance layer. 7 is a gas inflow pipe. 8 is an induction heating coil. 9 is a carbon plate. lO is the exhaust pipe How to heat up a sword for junior high school students AA figure
Claims (1)
キシャル膜を成長させるプロセスにおいて、該ウェハー
１上のエピタキシャル膜成長面３と反対側の面に不純物
イオンを注入し、拡散熱処理により０．１Ωｃｍ以下の
抵抗率を持つ厚さ１μｍ以上の低抵抗層２を形成し誘導
加熱することにより、該ウェハー１を加熱することを特
徴とする半導体ウェハーの加熱方法。In the process of growing an epitaxial film on a semiconductor wafer while heating the wafer, impurity ions are implanted into the surface of the wafer 1 opposite to the epitaxial film growth surface 3, and a resistance of 0.1 Ωcm or less is achieved by diffusion heat treatment. A method for heating a semiconductor wafer, which comprises heating the wafer 1 by forming a low resistance layer 2 having a thickness of 1 μm or more and heating the wafer 1 by induction heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27950787A JPH01120815A (en) | 1987-11-05 | 1987-11-05 | Heating of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27950787A JPH01120815A (en) | 1987-11-05 | 1987-11-05 | Heating of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01120815A true JPH01120815A (en) | 1989-05-12 |
Family
ID=17612005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27950787A Pending JPH01120815A (en) | 1987-11-05 | 1987-11-05 | Heating of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01120815A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002343946A (en) * | 2001-03-16 | 2002-11-29 | Canon Inc | Semiconductor film and manufacturing method thereof |
| JP2008067099A (en) * | 2006-09-07 | 2008-03-21 | Toin Gakuen | Array type ultrasonic probe and its manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961175A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Semiconductor substrate |
-
1987
- 1987-11-05 JP JP27950787A patent/JPH01120815A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961175A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Semiconductor substrate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002343946A (en) * | 2001-03-16 | 2002-11-29 | Canon Inc | Semiconductor film and manufacturing method thereof |
| JP2008067099A (en) * | 2006-09-07 | 2008-03-21 | Toin Gakuen | Array type ultrasonic probe and its manufacturing method |
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