JPH01116941A - Device and method for storage - Google Patents
Device and method for storageInfo
- Publication number
- JPH01116941A JPH01116941A JP27382287A JP27382287A JPH01116941A JP H01116941 A JPH01116941 A JP H01116941A JP 27382287 A JP27382287 A JP 27382287A JP 27382287 A JP27382287 A JP 27382287A JP H01116941 A JPH01116941 A JP H01116941A
- Authority
- JP
- Japan
- Prior art keywords
- needle
- recording
- storage medium
- stylus
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 229910052697 platinum Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 abstract description 2
- 241001422033 Thestylus Species 0.000 abstract 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は情報を原子レベルで書き込み、消去および読み
出しを行う記憶装置および記憶方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a storage device and a storage method for writing, erasing, and reading information at the atomic level.
（従来の技術）
従来より、磁気テープや磁気ディスクのように磁気的あ
るいは光磁気ディスクのように光学的あるいは集積回路
のように電気的に情報を書き込み、消去、読み出しを行
う記憶装置が知られているが、それぞれ記録密度の限界
を有している。磁気的な記憶方式は磁区の自由回転状態
（超常磁性）により記憶単位は１０ナノメータが限界で
ある。光学的あるいは電気的記憶装置は光子あるいは電
子の室温での量子力学的大きさにより記憶単位の限界か
決定される。不確定性原理によれば光子は数ミクロン、
電子は７．２人が限界である。(Prior Art) Storage devices that write, erase, and read information magnetically such as magnetic tapes and magnetic disks, optically such as magneto-optical disks, or electrically such as integrated circuits have been known. However, each has a recording density limit. In magnetic storage systems, the storage unit is limited to 10 nanometers due to the free rotation state of magnetic domains (superparamagnetism). In optical or electrical storage devices, the limit of the storage unit is determined by the quantum mechanical size of photons or electrons at room temperature. According to the uncertainty principle, a photon is several microns long,
The limit for electrons is 7.2 people.
（発明が解決しようとする問題点）
本発明は上記記憶装置の限界を越える極めて記憶密度の
高い記憶装置および記憶方法を提供するものである。(Problems to be Solved by the Invention) The present invention provides a storage device and a storage method with extremely high storage density that exceeds the limitations of the above storage devices.
（問題点を解決するための手段）
本発明の記憶装置では記憶媒体と針量の距離を変位セン
サーにより測定しつつ、該距離を一定に保つように蝕針
に取り付けたアクチュエータを駆動させると同時に、蝕
針に電界をかけることにより原子またはイオンを加速し
記憶媒体表面の原子と化合物を形成し記録を行う。また
該化合物に蝕針より記録時よりも高い電界をかけて原子
またはイオンを加速し該化合物を分解せしめることによ
り記録の消去を行う。また蝕針により記録された化合物
上を走査すると同時に、蝕針と記録媒体原子の間に流れ
るトンネル電流を測定することにより化合物の有無を検
出し記録情報を読み出すことを特徴とする。本発明では
記憶媒体に原子を用いているので、量子力学的大きさか
らくる記憶単位の限界は０．１８人程度である。(Means for Solving the Problems) In the storage device of the present invention, the distance between the storage medium and the needle is measured by a displacement sensor, and at the same time an actuator attached to the needle is driven to keep the distance constant. By applying an electric field to the corrosive needle, atoms or ions are accelerated to form a compound with the atoms on the surface of the storage medium to perform recording. Further, the recording is erased by applying an electric field higher than that during recording to the compound using an erodible needle to accelerate atoms or ions and decomposing the compound. Another feature is that the recorded information is read out by scanning the recorded compound with the erodible needle and at the same time measuring the tunnel current flowing between the eroding needle and the atoms of the recording medium to detect the presence or absence of the compound. Since atoms are used as the storage medium in the present invention, the limit of the storage unit due to quantum mechanical size is about 0.18 people.
本発明の記憶装置で用いる記憶媒体は、周期律表の全て
の元素を用いることが可能であるが装置の複雑化を避け
るため室温で固体であることが望ましい。また原子また
はイオン状態で加速する原子は、水素が最も小さく記憶
単位を小さくできる。針の材料は固態であれば周期律表
の全元素を用いることが可能であるが、加速原子または
イオンと反応しにくい金、白金、ロジウム、イリジウム
、パラジウム、レニウム、タングステン、クロム、タン
タル、銀、などの金属または合金が望ましい。The storage medium used in the storage device of the present invention can use all the elements of the periodic table, but is preferably solid at room temperature to avoid complication of the device. Furthermore, among atoms that accelerate in the atomic or ionic state, hydrogen is the smallest and the storage unit can be made smaller. All the elements in the periodic table can be used as materials for the needle as long as they are solid, but gold, platinum, rhodium, iridium, palladium, rhenium, tungsten, chromium, tantalum, and silver, which do not easily react with accelerated atoms or ions, can be used. Metals or alloys such as , etc. are desirable.
（実施例） 次に図面を参照して本発明の詳細な説明する。(Example) Next, the present invention will be described in detail with reference to the drawings.
第１図は本発明の記憶装置の一実施例を示す図であり、
第２図は本発明の記憶方法を示す図である。第２図では
左からイオン化過程、書き込み過程、読みだし過程、消
去過程の順に図示しである。FIG. 1 is a diagram showing an embodiment of the storage device of the present invention,
FIG. 2 is a diagram showing the storage method of the present invention. In FIG. 2, the ionization process, write process, read process, and erase process are illustrated in this order from the left.
珪素からなる記憶媒体１の表面に半径１０人の白金針２
を５０人程度に近付け、スイッチ１２により交流電源１
１により電界をかける。針の近傍の水素分子２４は電離
され水素イオン２５となり加速されて記録媒体１の珪素
原子と衝突してシリル基（Ｓｉ−Ｈ）を形成する。次に
針２を５程度度に圧電アクチュエータ３により記憶媒体
表面に近付け、針２と記憶媒体１の間に流れるトンネル
電流を電流計１０で測定し、珪素のトンネル電流とシリ
ル基のトンネル電流の違いにより情報の有無（シリル基
の有無）を検出する。トンネル電流はサーボ回路９を通
してアンプ６により圧電アクチュエータ３にフィードバ
ックされ針２と記憶媒体１の間隔を制御する。すなわち
トンネル電流が一定になるように圧電アクチュエータ３
を駆動するので記憶体１表面の表面粗さは珪素原子の周
期よりも長周期に仕上げる必要があるが通常のアルミナ
やシリカ砥粒を用いた研磨や電界研磨では該周期条件が
達せられる。さらにより高い電圧でシリル基上に水素イ
オンを加速衝突させるとシリル基は分解され水素分子と
なり情報は消去される。A platinum needle 2 with a radius of 10 people is placed on the surface of a storage medium 1 made of silicon.
close to about 50 people, and switch 12 turns on AC power supply 1.
1 applies an electric field. Hydrogen molecules 24 near the needle are ionized and become hydrogen ions 25, which are accelerated and collide with silicon atoms of the recording medium 1 to form silyl groups (Si-H). Next, the needle 2 is brought close to the storage medium surface by about 5 degrees using the piezoelectric actuator 3, and the tunnel current flowing between the needle 2 and the storage medium 1 is measured with the ammeter 10. The presence or absence of information (the presence or absence of a silyl group) is detected based on the difference. The tunnel current is fed back to the piezoelectric actuator 3 by the amplifier 6 through the servo circuit 9 to control the distance between the needle 2 and the storage medium 1. In other words, the piezoelectric actuator 3
, it is necessary to finish the surface roughness of the storage body 1 with a period longer than that of silicon atoms, but this periodic condition can be achieved by polishing using ordinary alumina or silica abrasive grains or electric field polishing. When hydrogen ions are accelerated and collided with the silyl group at an even higher voltage, the silyl group is decomposed into hydrogen molecules and information is erased.
針２は記憶媒体１上を圧電アクチュエータ４及び５によ
りｘ１ｙ方向にアンプ７．８を通して走査され記憶媒体
１の特定の原子上に情報の書き込み、読み出し、消去を
行う。走査は圧電アクチュエータまたは水晶振動子を用
いれば０．１程度度の精度で位置決めが可能である。針
２を記憶媒体１に近付けるときは、電流計１０を監視し
ておきトンネル電流が検出されるまで圧電アクチュエー
タ３を駆動することにより行う。加速時は加速電源１１
の電流が電流計１０に流れるのを防ぐためスイッチ１２
および１３を開閉する。The needle 2 is scanned over the storage medium 1 by piezoelectric actuators 4 and 5 in the x1y direction through an amplifier 7.8 to write, read, and erase information on specific atoms of the storage medium 1. For scanning, positioning can be performed with an accuracy of about 0.1 degree by using a piezoelectric actuator or a crystal oscillator. When the needle 2 is brought close to the storage medium 1, the ammeter 10 is monitored and the piezoelectric actuator 3 is driven until a tunnel current is detected. Acceleration power supply 11 during acceleration
switch 12 to prevent current from flowing to ammeter 10.
and 13 open and close.
更に別の記憶装置の一例として加速イオンに窒素および
記憶媒体にチタンを用いて記憶装置を作製した。As another example of a storage device, a storage device was fabricated using nitrogen as the accelerated ion and titanium as the storage medium.
更に別の記憶装置の一例として加速イオンに硫黄および
記憶媒体に銀を用いて記憶装置を作製した。As another example of a storage device, a storage device was fabricated using sulfur as the accelerated ion and silver as the storage medium.
更に別の記憶装置の一例として加速イオンに弗素および
記憶媒体に炭素を用いて記憶装置を作製した。As another example of a storage device, a storage device was fabricated using fluorine as the accelerated ion and carbon as the storage medium.
更に別の記憶装置の一例として加速イオンにタングステ
ンおよび記憶媒体にアルミニウムを用いて記憶装置を作
製した。As another example of a storage device, a storage device was fabricated using tungsten for accelerated ions and aluminum for the storage medium.
前記５種類の記録装置を用い、本発明の記録の書き込み
、読み出し、消去を行ったところ、１平方ミリメータ当
りＩ Ｘ １０１２ビツトの記録密度が得られた。When the recording of the present invention was written, read, and erased using the five types of recording devices described above, a recording density of I x 1012 bits per square millimeter was obtained.
（発明の効果）
このように本発明によれば極めて高密度の記憶が可能と
なる。(Effects of the Invention) As described above, according to the present invention, extremely high density storage is possible.
第１図は本発明の記録装置の一実施例を示す図である。
図に於て、１・・・記憶媒体、２・・・針、３・・・２
軸方向制御用圧電アクチユエータ、４・・・Ｘ軸制御用
圧電アクチュエータ、５．・、ｙ軸制御用圧電アクチュ
エータ、６・・・アンプ、７・・・アンプ、８・・・ア
ンプ、９・・・サーボ回路、１０・・・電流計、１１・
・・交流電源、１２・・・スイッチ、１３・・・スイッ
チである。
第２図は本発明の記憶方法の一実施例を示す図である。
図に於て１・・・記憶媒体、２・・・針、２４・・・水
素分子、２５・・・水素イオン、２６・・・シリル基で
ある。FIG. 1 is a diagram showing an embodiment of the recording apparatus of the present invention. In the figure, 1... Storage medium, 2... Needle, 3... 2
Piezoelectric actuator for axial direction control, 4... Piezoelectric actuator for X-axis control, 5.・Piezoelectric actuator for y-axis control, 6... Amplifier, 7... Amplifier, 8... Amplifier, 9... Servo circuit, 10... Ammeter, 11.
...AC power supply, 12...switch, 13...switch. FIG. 2 is a diagram showing an embodiment of the storage method of the present invention. In the figure, 1: storage medium, 2: needle, 24: hydrogen molecule, 25: hydrogen ion, 26: silyl group.
Claims (1)
に駆動するアクチュエータと、該針に電界をかけて原子
またはイオンを加速せしめる加速電源と、針と媒体間に
流れるトンネル電流を測定する電流計と、電流増幅器と
を備えたことを特徴とする記憶装置。 ２、記憶媒体と針間の距離を変位センサーにより測定し
つつ、該距離を一定に保つように該針に取り付けたアク
チュエータを駆動させると同時に、該針に電界をかける
ことにより原子またはイオンを加速し記憶媒体表面の原
子と化合物を形成して記録を行い、該化合物に該針より
記録時よりも高い電界をかけて原子またはイオンを加速
し該化合物を分解せしめることにより該記録の消去を行
い、該針により記録された化合物上を走査すると同時に
、該針と記録媒体原子の間に流れるトンネル電流を測定
することにより化合物の有無を検出し該記録情報を読み
出すことを特徴とする記憶方法。 ３、原子またはイオンに水素を用いる特許請求の範囲第
２項記載の記録装置。[Claims] 1. A needle disposed near a storage medium, an actuator that three-dimensionally drives the needle, an acceleration power source that applies an electric field to the needle to accelerate atoms or ions, and a needle A storage device comprising: an ammeter for measuring tunnel current flowing between media; and a current amplifier. 2. While measuring the distance between the storage medium and the needle using a displacement sensor, drive the actuator attached to the needle to keep the distance constant, and at the same time accelerate atoms or ions by applying an electric field to the needle. Recording is performed by forming a compound with atoms on the surface of the storage medium, and the recording is erased by applying a higher electric field to the compound from the needle than during recording, accelerating the atoms or ions and decomposing the compound. A storage method characterized in that the compound recorded by the needle is scanned and, at the same time, the tunnel current flowing between the needle and the atoms of the recording medium is measured to detect the presence or absence of the compound and read out the recorded information. 3. The recording device according to claim 2, wherein hydrogen is used as the atom or ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27382287A JPH01116941A (en) | 1987-10-28 | 1987-10-28 | Device and method for storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27382287A JPH01116941A (en) | 1987-10-28 | 1987-10-28 | Device and method for storage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01116941A true JPH01116941A (en) | 1989-05-09 |
Family
ID=17533041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27382287A Pending JPH01116941A (en) | 1987-10-28 | 1987-10-28 | Device and method for storage |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01116941A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5036490A (en) * | 1988-10-05 | 1991-07-30 | Olympus Optical Co., Ltd. | Memory device with dual cantilever means |
| US5038322A (en) * | 1988-09-21 | 1991-08-06 | U.S. Philips Corporation | Method of and device for sub-micron processing a surface |
| WO1992012528A1 (en) * | 1991-01-11 | 1992-07-23 | Hitachi Limited | Surface atom machining method and apparatus |
| US5439777A (en) * | 1988-10-04 | 1995-08-08 | Canon Kabushiki Kaisha | Recording and reproducing apparatus and method for applying a pulse voltage and an electromagnetic wave |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63222348A (en) * | 1987-03-11 | 1988-09-16 | Canon Inc | Device and method for recording |
| JPS63222347A (en) * | 1987-03-11 | 1988-09-16 | Canon Inc | Method and device for reproduction |
-
1987
- 1987-10-28 JP JP27382287A patent/JPH01116941A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63222348A (en) * | 1987-03-11 | 1988-09-16 | Canon Inc | Device and method for recording |
| JPS63222347A (en) * | 1987-03-11 | 1988-09-16 | Canon Inc | Method and device for reproduction |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5038322A (en) * | 1988-09-21 | 1991-08-06 | U.S. Philips Corporation | Method of and device for sub-micron processing a surface |
| US5439777A (en) * | 1988-10-04 | 1995-08-08 | Canon Kabushiki Kaisha | Recording and reproducing apparatus and method for applying a pulse voltage and an electromagnetic wave |
| US5036490A (en) * | 1988-10-05 | 1991-07-30 | Olympus Optical Co., Ltd. | Memory device with dual cantilever means |
| WO1992012528A1 (en) * | 1991-01-11 | 1992-07-23 | Hitachi Limited | Surface atom machining method and apparatus |
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