JPH01312753A - Recording and reproducing device - Google Patents
Recording and reproducing deviceInfo
- Publication number
- JPH01312753A JPH01312753A JP14373888A JP14373888A JPH01312753A JP H01312753 A JPH01312753 A JP H01312753A JP 14373888 A JP14373888 A JP 14373888A JP 14373888 A JP14373888 A JP 14373888A JP H01312753 A JPH01312753 A JP H01312753A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording medium
- probe electrode
- application
- surface shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 claims abstract description 40
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 abstract description 21
- 239000010409 thin film Substances 0.000 abstract description 10
- 238000001704 evaporation Methods 0.000 abstract description 5
- 230000008018 melting Effects 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910001093 Zr alloy Inorganic materials 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 229910001069 Ti alloy Inorganic materials 0.000 abstract description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 2
- 229910001370 Se alloy Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910000765 intermetallic Inorganic materials 0.000 abstract 1
- 230000015654 memory Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- NBJBFKVCPBJQMR-APKOLTMOSA-N nff 1 Chemical compound C([C@H](NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H]1CCCN1C(=O)[C@H](CCCCN)NC(=O)[C@@H]1CCCN1C(=O)CC=1C2=CC=C(C=C2OC(=O)C=1)OC)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCCNC=1C(=CC(=CC=1)[N+]([O-])=O)[N+]([O-])=O)C(=O)NCC(O)=O)C1=CC=CC=C1 NBJBFKVCPBJQMR-APKOLTMOSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、走査型トンネル顕微鏡（以下ｒＳＴＭ」とい
う）の原理を応用した記録再生装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a recording/reproducing apparatus applying the principle of a scanning tunneling microscope (hereinafter referred to as "rSTM").
［従来の技術］
近年メモリ材料の用途は、コンピュータおよびその関連
機器、ビデオディスク、ディジタルオーディオディスク
等のエレクトロニクス産業の中核をなすものであり、そ
の材料開発も極めて活発に進んでいる。メモリ材料に要
求される性能は用途により異なるが、一般的に高密度で
記録容量が大きいことが要求されている。[Background Art] In recent years, the use of memory materials has become the core of the electronics industry, such as computers and related equipment, video disks, digital audio disks, etc., and the development of these materials has been extremely active. The performance required of memory materials varies depending on the application, but generally high density and large storage capacity are required.
最近までは磁性体や半導体を素材とした磁気メモリや半
導体メモリが主であったが、近年のレーザー技術の進展
に伴ない、光メモリが開発され、記録媒体表面の凹凸、
反射率等の差異を利用して、７ｚｍオーダーの高密度な
記録再生が可能となっている。この光メモリの記録媒体
としては、金属又は金属酸化物の薄膜、有機色素薄膜等
が用いられ、レーザー光の熱を利用して、蒸発、溶融等
により、穴をあけたり反射率を変化させて情報を記録し
ている。Until recently, magnetic memories and semiconductor memories made of magnetic materials and semiconductors were the main materials, but with the recent advances in laser technology, optical memories have been developed,
Utilizing differences in reflectance, etc., enables high-density recording and reproduction on the order of 7 zm. The recording medium of this optical memory is a thin film of metal or metal oxide, a thin film of organic dye, etc., and the heat of the laser beam is used to create holes or change the reflectance through evaporation, melting, etc. are recorded.
一方、最近、導電性物質の電子構造を直接観察できるＳ
ＴＭが開発されている［ジー・ピニング（Ｇ、 Ｂｉｎ
ｎｉｎｇ） 他ｒヘルベティ力・フィズイ力・アクタ
（Ｈｅｌｖｅｔｉｃａ Ｐｙｓｉｃａ Ａｃｔａ）」５
５．７２６（１９８２）］ 、このＳＴＭは、単結晶、
非晶質を問わず、実空間像の高い分解能の測定が、対象
に電流による損傷を与えずに低電力でできる利点を有し
、しかも大気中でも種々の材料に対して用いることがで
きるため、広範囲な応用が期待されている。On the other hand, recently, S
TM has been developed [G, Bin
ning) Others r Helvety force/Fizzy force/Actor
(Helvetica Pysica Acta)”5
5.726 (1982)], this STM is a single crystal,
Regardless of the amorphous material, it has the advantage of being able to measure high-resolution real-space images with low power without damaging the target due to current, and can be used on a variety of materials even in the atmosphere. It is expected to have a wide range of applications.
上記ＳＴＭは、金属の探針（プローブ電極）と導電性物
質の間に電圧を加えてｌｎｍ程度の距離まで近づけると
トンネル電流が流れることを利用している。この電流は
両者の距離変化に非常に敏感であり、トンネル電流を一
定に保つように探針を走査することにより、実空間の表
面構造を描くことができると同時に０表面原子の全電子
雲に関する種々の情報をも読み取ることができる。この
際、面内方向の分解能は０．１ｎｍ程度である。従って
、ＳＴＭの原理を応用すれば、十分にｎｍオーダーでの
高密度記録再生が可能である。The above-mentioned STM utilizes the fact that a tunnel current flows when a voltage is applied between a metal probe (probe electrode) and a conductive substance to bring them close to a distance of about 1 nm. This current is very sensitive to changes in the distance between the two, and by scanning the probe while keeping the tunneling current constant, it is possible to draw the surface structure in real space, and at the same time, it is possible to draw the surface structure in real space. Various information can also be read. At this time, the resolution in the in-plane direction is about 0.1 nm. Therefore, by applying the principle of STM, high-density recording and reproduction on the nanometer order is possible.
そこで、ｎｆｆ１オーダーという、ｋｍオーダーの光メ
モリーより更に高密度の記録再生を可能とすべく、従来
、Ｉ−、記ＳＴＭの原理を応用した記録再生について、
電子ビーム、イオンビームあるいはＸ線、光等の電磁波
により、記録媒体の表面状態を変化させて記録し、ＳＴ
Ｍで再生する方法や、記録媒体として、電圧電流のスイ
ッチング特性においてメモリ効果を有する材料、例えば
カルコゲン化物類の薄膜層やπ電子系有機化合物の薄膜
層を用いて、記録再生をＳＴＭを用いて行なう方法が提
案されている。また、ＳＴＭのプローブ電極に、フィー
ルドエミッションが生じる電圧をかけ、Ｒｈ−Ｚｒ合金
の試料表面に局所的に溶融させて、コーン状の突起を作
るという試みもなされている［ニー・ステファ（ｔｌ、
５ｔａｆｅｒ）他「アプライ・ワイズ４−／クス・レタ
ーＪ （ＡＰＰｌ、 Ｐｈｙｓ、 Ｌｅｔｔ、）５１
（４）、 １９８７年７月２７日〕。Therefore, in order to enable higher density recording and reproducing of nff1 order, which is higher than that of km order optical memory, conventional recording and reproducing using the principle of I-STM has been proposed.
ST records by changing the surface condition of the recording medium using electromagnetic waves such as electron beams, ion beams, X-rays, and light.
The recording and reproducing method is based on STM, using a material that has a memory effect in voltage-current switching characteristics as a recording medium, such as a thin film layer of chalcogenides or a thin film layer of a π-electron organic compound. A method has been proposed. In addition, an attempt has been made to apply a voltage that causes field emission to the STM probe electrode and locally melt it on the surface of the Rh-Zr alloy sample to create a cone-shaped protrusion [Nie Stepher (tl.
5tafer) et al. “Apply Wise 4-/Kus Letter J (APPl, Phys, Lett,) 51
(4), July 27, 1987].
［５Ｉ！、明が解決しようとする課題］しかしながら、
従来の光メモリでは、レーザー光を光学系により収束さ
せて記録再生を行なうため、光の波長以下にビーム径を
絞ることは難しく、なるべく波長の短い光を使う等の改
良がなされつつあるが、記録単位はｇｍオーダーが限界
で、これ以上の高密度化ができない問題がある。[5I! , the problem that Ming tries to solve] However,
In conventional optical memory, recording and reproducing are performed by converging laser light with an optical system, so it is difficult to narrow down the beam diameter to less than the wavelength of the light, and improvements are being made such as using light with a wavelength as short as possible. The unit is limited to the gm order, and there is a problem that higher density cannot be achieved.
一方、ＳＴＭの原理を応用した記録再生は、前述のよう
な試みはなされてはいるが、実用的な記録再生装置の開
発には至っていないのが現状である。また、記録媒体は
、導電性を有し、局所的加熱により溶融または蒸発して
変形する材質からなるが、材質によっては導電性が非常
に低いものがあり、また薄膜であるので、その記録媒体
の面内方向の抵抗値が高くなり、記録時のプローブ電極
に流す電流値が記録領域の場所で変動したり、記録媒体
自身の抵抗で発熱したりして、最適な記録条件からはず
れる場合が出てくる問題がある。On the other hand, although the above-mentioned attempts have been made to record and reproduce data using the principles of STM, no practical recording and reproduction apparatus has yet been developed. Furthermore, the recording medium is made of a material that is electrically conductive and deforms by melting or evaporating when locally heated, but some materials have very low electrical conductivity and are thin films, so the recording medium The resistance value in the in-plane direction of the recording medium increases, and the current value flowing through the probe electrode during recording may vary depending on the location of the recording area, or heat may be generated due to the resistance of the recording medium itself, which may deviate from the optimal recording conditions. There is a problem that comes up.
［課題を解決するための手段］
上記課題を解決するために本発明で講じられた手段を一
実施例に対応する第１図で説明すると、本発明では、局
所的電界の印加によって表面形状が局所的に変化する記
録媒体２と、電圧を印加可能なプローブ電極１とが、相
対向しかつ縦及び横方向に相対的に移動可能に位置され
ており、記録媒体２とプローブ電極１間の間隔が、記録
時には一定に保持され、再生時には記録媒体２とプロー
ブ電極１間のトンネル電流を一定に保持する間隔に制御
される記録再生装置とするという手段を講じているもの
である。[Means for Solving the Problems] The means taken in the present invention to solve the above problems will be explained with reference to FIG. 1 corresponding to an embodiment. A locally changing recording medium 2 and a probe electrode 1 to which a voltage can be applied are positioned facing each other and movable relative to each other in the vertical and horizontal directions. The recording and reproducing apparatus is such that the interval is controlled to be constant during recording and to maintain the tunnel current between the recording medium 2 and the probe electrode 1 constant during reproduction.
本発明における記録媒体２としては、導電性を有し、局
所的な電界の印加により、溶融又は蒸発して局所的に表
面形状の変化する材質のものが使用される。この材質と
しては１例えば金属又は金属化合物の薄膜、具体的には
、例えばＡｕ、 ＡＩ！、更には従来の技術の項に示し
た文献にも示されているＲｈ−Ｚｒ合金、Ｔｅ−Ｔｉ合
金、Ｔｅ−５ｅ合金、Ｔｅ−Ｃ。The recording medium 2 used in the present invention is made of a material that is electrically conductive and whose surface shape locally changes by melting or evaporating when a local electric field is applied. Examples of this material include 1, for example, a thin film of a metal or a metal compound, specifically, for example, Au, AI! , Rh-Zr alloy, Te-Ti alloy, Te-5e alloy, and Te-C, which are also shown in the documents listed in the prior art section.
Ｈ糸材料又はアモルファスシリコン等の半導体薄膜等を
用いることができる。H thread material or a semiconductor thin film such as amorphous silicon can be used.
プローブ電極１としては、タングステン、 ｐｔ−Ｉｒ
、 Ｐｔ等の尖鋭な針状物が使用される。プローブ電極
ｌは、記録再生の分解能を良くするため、先端が例えば
機械研削、電解研磨等により尖鋭に加下されていること
が好ましい。As the probe electrode 1, tungsten, pt-Ir
A sharp needle-like material such as Pt is used. In order to improve the resolution of recording and reproduction, it is preferable that the tip of the probe electrode 1 is sharpened by, for example, mechanical grinding, electrolytic polishing, or the like.
本発明において、縦方向とは記録媒体２とプローブ電極
ｌの対向方向をいい、横方向とは縦方向に対する直角方
向をいう、また、記録媒体２とプローブ電極ｌの相対的
移動は、いずれか一方のみを移動させることで行っても
、両者を同時に移動させることで行ってもよい。In the present invention, the vertical direction refers to the direction in which the recording medium 2 and the probe electrode l face each other, and the horizontal direction refers to the direction perpendicular to the vertical direction. This may be done by moving only one or both at the same time.
また、本発明において、特に記録媒体２の電気抵抗率が
比較的高い場合には、第３図に示されるように、この記
録媒体２よりも電気抵抗率の低いｒ地層１３を設けるこ
とが好ましい。下地層１３としては、例えばＡｕ、 Ａ
ｊ）等の電気抵抗率の低い材料の薄膜が用いられる。Further, in the present invention, especially when the electrical resistivity of the recording medium 2 is relatively high, it is preferable to provide an r layer 13 having a lower electrical resistivity than the recording medium 2, as shown in FIG. . As the base layer 13, for example, Au, A
A thin film of a material with low electrical resistivity such as j) is used.
［作 用］
記録媒体２とプローブ電極１の相対的移動は、任意の位
置での記録と再生をＯｆ能にするためのもので、特に記
録時に記録媒体２とプローブ電極１間の間隔が一定に保
持されるのは、所定の電界によって所定の表面形状の変
化をもたらす働きをなす、また、再生時に記録媒体２と
プローブ電極１間の間隔が、両者間のトンネル電流を一
定にする間隔に制御されることは、上記記録時の表面形
状変化状態に沿った両者の相対的縦方向の移動をもたら
す働きをなす。[Function] The relative movement between the recording medium 2 and the probe electrode 1 is to enable recording and reproduction at any position, and especially when the distance between the recording medium 2 and the probe electrode 1 is constant during recording. This serves to bring about a predetermined change in surface shape by a predetermined electric field, and the distance between the recording medium 2 and the probe electrode 1 during reproduction is such that the tunnel current between them is kept constant. The controlled function serves to cause relative vertical movement of both along the surface shape change state during recording.
一方、下地ｆｉ１３は、特に記録時の電流のほとんどが
この下地層１３を流れることに伴って、記録時の表面形
状変化を全面に亘って安定化させる働きをなす。On the other hand, the base fi 13 serves to stabilize changes in surface shape over the entire surface during recording, especially since most of the current during recording flows through this base layer 13.
［実施例］
第１図は本発明の一実施例に係る記録再生装置の説明図
で、第１図中１はプローブ電極で、記録再生用に用いら
れる０本実施例におけるプローブ電極ｌとしては、タン
グステン針の先端を電解研磨したものを使用した。[Example] Fig. 1 is an explanatory diagram of a recording/reproducing apparatus according to an embodiment of the present invention. In Fig. 1, 1 is a probe electrode, and the probe electrode 1 in this embodiment is used for recording/reproduction. A tungsten needle with an electrolytically polished tip was used.
２は基板３上に形成された記録媒体、４はプローブ電極
１と記録媒体２の間に流れるトンネル電流を検出するプ
ローブ電流増幅器、５は図中のＺ方向すなわち縦方向に
プローブ電極ｌの移動制御するＺ方向サーボ回路、６は
プローブ電極ｌをＺ方向に駆動する圧電素子等により構
成されるＺ方向微動機構である。2 is a recording medium formed on a substrate 3, 4 is a probe current amplifier that detects the tunnel current flowing between the probe electrode 1 and the recording medium 2, and 5 is the movement of the probe electrode l in the Z direction, that is, the vertical direction in the figure. The controlling Z-direction servo circuit 6 is a Z-direction fine movement mechanism composed of a piezoelectric element and the like that drives the probe electrode l in the Z direction.
Ｚ方向サーボ回路５は、プローブ電流増幅器４で検出し
たプローブ電流を一定に保つようにＺ方向微動機構６を
駆動し、プローブ電極ｌと記録媒体２との距離を制御す
る。The Z-direction servo circuit 5 drives the Z-direction fine movement mechanism 6 so as to keep the probe current detected by the probe current amplifier 4 constant, and controls the distance between the probe electrode 1 and the recording medium 2.
７は図中ＸＹ力方向なわち、横方向にプローブ電極ｌを
移動制御する圧電素子等で構成されるＸＹ方向微動機構
である。また８はＸＹ方向粗動機構で、圧電素子または
電磁的手段により駆動される。これらＸＹ方向微動及び
粗動機構７，８を図示せぬ制御回路により制御し、記録
媒体２の記録領域の任意の位置にプローブ電極１を移動
させることができる。Reference numeral 7 denotes an XY direction fine movement mechanism comprised of a piezoelectric element and the like that controls the movement of the probe electrode l in the XY force directions in the figure, that is, in the lateral direction. Further, 8 is an XY direction coarse movement mechanism, which is driven by a piezoelectric element or electromagnetic means. These XY direction fine movement and coarse movement mechanisms 7 and 8 are controlled by a control circuit (not shown), and the probe electrode 1 can be moved to any position in the recording area of the recording medium 2.
次に記録再生の方法について説明する。Next, a recording/reproducing method will be explained.
まず、記録方法については、第１図で、記録すべき記録
信号１２と記録媒体２上の記録位置信号が図示せぬ制御
回路から送られてくる。そのときプローブ電極ｌは、ｘ
Ｙ方向微動及び粗動機構７゜８により、指定の記録位置
まで、記録媒体２との距離が制御された状態で移動し、
記録位置に到達した時、記録信号１２に対応するパルス
電圧を発生するパルス電圧回路１１により、プローブ電
極ｌに書き込み用のパルス電圧が与えられることになる
。このパルス電圧により、記録位置に過大な電流が流れ
、局所的に記録媒体２の表面が溶融又は蒸発して表面形
状が変化し、記録がなされる。その際、パルス電圧を印
加すると、プローブ電流が急激に変化するので、Ｚ方向
サーボ回路５は、その間出力電圧が一定となるようにＨ
ＯＬＤ回路をＯＮにするように制御している。そのため
、記録時にプローブ電極１と記録媒体２の距離が著しく
変化することはなく、安定な記録が出来る。First, regarding the recording method, as shown in FIG. 1, a recording signal 12 to be recorded and a recording position signal on the recording medium 2 are sent from a control circuit (not shown). At that time, the probe electrode l is x
The Y-direction fine movement and coarse movement mechanism 7°8 moves to the specified recording position with the distance from the recording medium 2 being controlled,
When the recording position is reached, a pulse voltage for writing is applied to the probe electrode 1 by the pulse voltage circuit 11 which generates a pulse voltage corresponding to the recording signal 12. This pulse voltage causes an excessive current to flow to the recording position, locally melting or vaporizing the surface of the recording medium 2, changing the surface shape, and recording is performed. At this time, when a pulse voltage is applied, the probe current changes rapidly, so the Z-direction servo circuit 5 adjusts H so that the output voltage remains constant during that time.
The OLD circuit is controlled to be turned on. Therefore, the distance between the probe electrode 1 and the recording medium 2 does not change significantly during recording, and stable recording can be performed.
次に再生方法については、記録時と同様に、図示せぬ制
御回路から再生すべき記録位置が支持され、プローブ電
極ｌは、ＸＹ方向微動及び粗動機構７，８により、指定
の位置まで移動し、再生を開始する。そのとき、プロー
ブ電極ｌは、Ｚ方向サーボ回路５により、記録媒体２上
の記録により生じた凹凸の表面をトンネル電流が一定に
なるようになぞるので、Ｚ方向サーボ回路５からＺ方向
微動機構６に与える制御信号は、記録媒体２の表面の凹
凸に対応しており、この制御信号を再生信号復調回路９
で波形整形等の処理をすることにより再生信号１０が得
られる。Next, regarding the reproduction method, the recording position to be reproduced is supported by a control circuit (not shown), and the probe electrode l is moved to the specified position by the XY direction fine movement and coarse movement mechanisms 7 and 8, as in the case of recording. and start playback. At this time, the probe electrode l traces the surface of the unevenness caused by recording on the recording medium 2 by the Z direction servo circuit 5 so that the tunnel current is constant. The control signal given to corresponds to the unevenness of the surface of the recording medium 2, and this control signal is sent to the reproduction signal demodulation circuit 9.
A reproduced signal 10 is obtained by performing processing such as waveform shaping.
第２図（ａ） 、（ｂ）は、本発明の記録媒体２−ヒに
生じる記録形状例を示す斜視図で、記録時のプローブ電
極ｌに印加するパルス電圧の大きさ、印加時間、記録媒
体２の材質等の違いにより記録形状が異なってくる。す
なわち、プローブ電極ｌの先端では、記録パルス電圧印
加時には通常のトンネル電流数ｐＡ−ａｎＡに比較して
はるかに多くの電流がフィールドエミッションにより流
れ、記録媒体２の表面を局所的に加熱する。そのため、
記録媒体２の表面は、第２図（ａ）のように、局所的に
溶融して、プローブ電極１との間の強電界により吸引力
が働き、凸部１４が形成されたり、第２図（ｂ）のよう
に、局所的に蒸発して四部１５が形成される場合があり
、その形状の制御は、記録条件を調整することにより最
適化することが可能である。この凹凸形状の大きさは直
径数十ｎｍ〜数ｎ諺程度とすることが可能で、非常に高
密度の記録再生が可能となる。FIGS. 2(a) and 2(b) are perspective views showing examples of recording shapes produced in the recording medium 2-A of the present invention, and show the magnitude of the pulse voltage applied to the probe electrode l during recording, the application time, and the recording shape. The recording shape differs depending on the material of the medium 2, etc. That is, at the tip of the probe electrode 1, when a recording pulse voltage is applied, a current much larger than the normal tunnel current number pA-anA flows due to field emission, and locally heats the surface of the recording medium 2. Therefore,
As shown in FIG. 2(a), the surface of the recording medium 2 is locally melted, and an attractive force is exerted by the strong electric field between the recording medium 2 and the probe electrode 1, and convex portions 14 are formed. As shown in (b), there are cases where the four parts 15 are formed by local evaporation, and the control of the shape can be optimized by adjusting the recording conditions. The size of the concavo-convex shape can be set to a diameter of several tens of nanometers to several nanometers, making it possible to perform extremely high-density recording and reproduction.
第３図（ａ）、（ｂ）は、裏面側に記録媒体２より導電
性の良い下地層１３を設けて記録媒体２を形成した基板
３の断面図で、この二層構造とした場合、記録時の電流
のほとんど大部分が導電層３２を通して行なわれ、これ
により、記録領域全面にわたって安定な記録が出来るよ
うになった。また、第３図（ａ）、（ｂ）に示されるよ
うに、この場合にも記録層３１の材質により記録部が凸
又は凹状になり、どちらの場合でも同様の効果がある。FIGS. 3(a) and 3(b) are cross-sectional views of a substrate 3 on which a recording medium 2 is formed by providing a base layer 13 with better conductivity than the recording medium 2 on the back side, and in the case of this two-layer structure, Almost all of the current during recording is conducted through the conductive layer 32, which makes it possible to perform stable recording over the entire recording area. Further, as shown in FIGS. 3(a) and 3(b), in this case as well, the recording portion may have a convex or concave shape depending on the material of the recording layer 31, and the same effect can be obtained in either case.
［発明の効果］
本発明によれば、−台の装置で、ＳＴＭの原理を応用し
た記録再生を行うことができ、特にＳＴＭの原理により
、数十〜数ｎｍオーダーの非常に高密度の記録再生が可
能となる。[Effects of the Invention] According to the present invention, it is possible to perform recording and reproduction by applying the STM principle with -1 devices, and in particular, the STM principle enables extremely high-density recording on the order of tens to several nanometers. Playback becomes possible.
また、下地層１３を設けることにより、記録媒体２とし
てあまり導電性の良くない材料を使用しても安定した記
録を行うことができ、記録媒体２として広範囲の材料を
選択できる。Furthermore, by providing the underlayer 13, stable recording can be performed even if a material with poor conductivity is used as the recording medium 2, and a wide range of materials can be selected for the recording medium 2.
第１図は本発明に係る記録再生装置の一実施例の説明図
、第２図（ａ）、（ｂ）は記録形状例を示す斜視図、第
３図（ａ） 、 （ｂ）は下地層と記録媒体を設けた基
板の断面図である。
ｌニブローブ電極、 ２：記録媒体、１３：下地層。
出願人 キ ヤ ノ ン 株 式 会 社代理人 豊
１） 善 雄
第２図
第３図
（α）
（ｂ）FIG. 1 is an explanatory diagram of an embodiment of the recording/reproducing device according to the present invention, FIGS. 2(a) and (b) are perspective views showing examples of recording shapes, and FIGS. 3(a) and (b) are bottom views. FIG. 2 is a cross-sectional view of a substrate provided with a geological layer and a recording medium. 1 nib lobe electrode, 2: recording medium, 13: underlayer. Applicant Canon Co., Ltd. Company Agent Yutaka
1) Yoshio Figure 2 Figure 3 (α) (b)
Claims (1)
する記録媒体と、電圧を印加可能なプローブ電極とが、
相対向しかつ縦及び横方向に相対的に移動可能に位置さ
れており、記録媒体とプローブ電極間の間隔が、記録時
には一定に保持され、再生時には記録媒体とプローブ電
極間のトンネル電流を一定に保持する間隔に制御される
ことを特徴とする記録再生装置。 ２）記録媒体の裏面側に、導電性を有する下地層が設け
られていることを特徴とする請求項第１項記載の記録再
生装置。[Claims] 1) A recording medium whose surface shape locally changes by application of a local electric field, and a probe electrode to which a voltage can be applied,
They are positioned facing each other and movable relative to each other in the vertical and horizontal directions, so that the distance between the recording medium and the probe electrodes is kept constant during recording, and the tunnel current between the recording medium and the probe electrodes is kept constant during playback. A recording/reproducing device characterized in that the recording/reproducing device is controlled to maintain intervals. 2) The recording/reproducing apparatus according to claim 1, wherein a conductive underlayer is provided on the back side of the recording medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14373888A JPH01312753A (en) | 1988-06-13 | 1988-06-13 | Recording and reproducing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14373888A JPH01312753A (en) | 1988-06-13 | 1988-06-13 | Recording and reproducing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01312753A true JPH01312753A (en) | 1989-12-18 |
Family
ID=15345865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14373888A Pending JPH01312753A (en) | 1988-06-13 | 1988-06-13 | Recording and reproducing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01312753A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0450771A2 (en) * | 1990-04-05 | 1991-10-09 | International Business Machines Corporation | Method and apparatus for writing by the emission of atoms |
| EP0464537A2 (en) * | 1990-07-03 | 1992-01-08 | BASF Aktiengesellschaft | Method for temporarily stable marking of isolated atoms or groups of atoms on a solid state body surface and use of the same for storing information units at an atomic level |
| EP0522168A1 (en) * | 1991-01-11 | 1993-01-13 | Hitachi, Ltd. | Surface atom machining method and apparatus |
| EP0523676A2 (en) | 1991-07-17 | 1993-01-20 | Canon Kabushiki Kaisha | Information recording/reproducing method for recording and/or reproducing information on information recording carrier by use of probe electrode, information recording/reproducing apparatus executing the method, and information recording carrier suitable for the method |
| JPH06213910A (en) * | 1992-11-30 | 1994-08-05 | Digital Instr Inc | Method and interaction device for accurately measuring parameter of surface other than shape or for performing work associated with shape |
| JP2008021407A (en) * | 2001-05-14 | 2008-01-31 | Samsung Electronics Co Ltd | Data storing method and data storing device |
-
1988
- 1988-06-13 JP JP14373888A patent/JPH01312753A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0450771A2 (en) * | 1990-04-05 | 1991-10-09 | International Business Machines Corporation | Method and apparatus for writing by the emission of atoms |
| EP0450771A3 (en) * | 1990-04-05 | 1993-02-24 | International Business Machines Corporation | Method and apparatus for writing by the emission of atoms |
| EP0464537A2 (en) * | 1990-07-03 | 1992-01-08 | BASF Aktiengesellschaft | Method for temporarily stable marking of isolated atoms or groups of atoms on a solid state body surface and use of the same for storing information units at an atomic level |
| EP0464537A3 (en) * | 1990-07-03 | 1993-02-24 | Basf Aktiengesellschaft | Method for temporarily stable marking of isolated atoms or groups of atoms on a solid state body surface and use of the same for storing information units at an atomic level |
| EP0522168A1 (en) * | 1991-01-11 | 1993-01-13 | Hitachi, Ltd. | Surface atom machining method and apparatus |
| EP0522168A4 (en) * | 1991-01-11 | 1994-08-31 | Hitachi, Ltd. | |
| EP0523676A2 (en) | 1991-07-17 | 1993-01-20 | Canon Kabushiki Kaisha | Information recording/reproducing method for recording and/or reproducing information on information recording carrier by use of probe electrode, information recording/reproducing apparatus executing the method, and information recording carrier suitable for the method |
| US5461605A (en) * | 1991-07-17 | 1995-10-24 | Canon Kabushiki Kaisha | Information recording/reproducing method, recording carrier and apparatus for recording and/or reproducing information on information recording carrier by use of probe electrode |
| US5610898A (en) * | 1991-07-17 | 1997-03-11 | Canon Kabushiki Kaisha | Information recording/reproducing method for recording and/or reproducing information on information recording carrier by use of probe electrode |
| JPH06213910A (en) * | 1992-11-30 | 1994-08-05 | Digital Instr Inc | Method and interaction device for accurately measuring parameter of surface other than shape or for performing work associated with shape |
| JP2008021407A (en) * | 2001-05-14 | 2008-01-31 | Samsung Electronics Co Ltd | Data storing method and data storing device |
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