JPH01115169A - Semiconductor device for incident position detection - Google Patents
Semiconductor device for incident position detectionInfo
- Publication number
- JPH01115169A JPH01115169A JP62273673A JP27367387A JPH01115169A JP H01115169 A JPH01115169 A JP H01115169A JP 62273673 A JP62273673 A JP 62273673A JP 27367387 A JP27367387 A JP 27367387A JP H01115169 A JPH01115169 A JP H01115169A
- Authority
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- Japan
- Prior art keywords
- layer
- conductive layer
- semiconductor substrate
- incident
- incident surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000001514 detection method Methods 0.000 title description 6
- 239000010410 layer Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 18
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光や粒子線の入射位置についての情報を、電流
等として出力できる入射位置検出用半導体装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device for detecting an incident position that can output information about the incident position of light or a particle beam as a current or the like.
従来、このような分野の技術としては、例えば特開昭５
９−１７２８８号公報に示されるものがあった。この従
来例では、まずｎ型の矩形の半導体基板の両端部に一対
の位置信号電極が設けられる。そして、これらの間の入
射面の中央には、均一な断面積で均一な不純物濃度のｐ
型の基幹導電層が形成され、この基幹導電層から入射面
に延びるように、複数のｐ型の分枝導電層が形成されて
いる。Conventionally, as a technology in this field, for example, Japanese Patent Application Laid-open No. 5
There was one shown in Publication No. 9-17288. In this conventional example, a pair of position signal electrodes are first provided at both ends of an n-type rectangular semiconductor substrate. At the center of the incident plane between these, p is located with a uniform cross-sectional area and a uniform impurity concentration.
A p-type base conductive layer is formed, and a plurality of p-type branch conductive layers are formed extending from the base conductive layer to the incident surface.
この従来例によれば、光や粒子線の入射によって入射面
で生成された電荷は、分枝導電層で集められて基幹導電
層で抵抗分割される。ここで、基幹導電層は細く形成さ
れているので、その抵抗値は十分に高く、精度よく設定
することができ、従って検出感度を向上させることがで
きる。According to this conventional example, charges generated on the incident surface due to the incidence of light or particle beams are collected in the branched conductive layers and resistance-divided in the main conductive layer. Here, since the basic conductive layer is formed thin, its resistance value is sufficiently high and can be set with high precision, so that detection sensitivity can be improved.
しかしながら、この従来例を実用化するときに、表面保
護のためエポキシ樹脂などの表面保護層を入射面上に形
成すると、その電荷によって基幹導電層の抵抗値が変動
することがあった。具体的には、エポキシ樹脂にはナト
リウムイオン（Ｎａ ）が含まれており、この正電荷
による電界が基幹導電層の有効断面積を変動させてしま
う。この電界の影響は、基幹導電層を高抵抗とするため
に不純物濃度を低くすればするほど著しく、従って高い
感度のものを得ることができなかった。However, when this conventional example is put into practical use, if a surface protective layer such as epoxy resin is formed on the incident surface for surface protection, the resistance value of the basic conductive layer may fluctuate due to the electric charge. Specifically, the epoxy resin contains sodium ions (Na 2 ), and the electric field caused by this positive charge changes the effective cross-sectional area of the basic conductive layer. The effect of this electric field becomes more significant as the impurity concentration is lowered to make the basic conductive layer higher in resistance, and therefore, it has been impossible to obtain high sensitivity.
そこで本発明は、表面保護層が積層されて用いられると
きにも、基幹導電層の抵抗を高くして感度を高くできる
入射位置検出用半導体装置を提供することを目的とする
。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor device for detecting an incident position that can increase the resistance of a basic conductive layer and increase the sensitivity even when a surface protective layer is stacked.
本発明に係る入射位置検出用半導体装置は、−導電型の
半導体基板と、この半導体基板の入射面の両端に互いに
平行に設けられた一対の位置信号電極と、この一対の位
置信号電極を高い抵抗で接続するように半導体基板に形
成された基幹導電層と、この基幹導電層から入射面に延
びるように形成された反対導電型の不純物を含む複数の
分枝導電層とを備え、さらに絶縁膜を介して基幹導電層
を覆うように形成され、表面保護層の電荷の影響から基
幹導電層をシールドする導電性のシールド膜を備えるこ
とを特徴とする。A semiconductor device for detecting an incident position according to the present invention includes a - conductivity type semiconductor substrate, a pair of position signal electrodes provided in parallel to each other on both ends of an incident surface of the semiconductor substrate, and a semiconductor device having a high conductivity type. It comprises a basic conductive layer formed on a semiconductor substrate so as to be connected by a resistor, and a plurality of branch conductive layers containing impurities of opposite conductivity type formed to extend from this basic conductive layer to an incident surface, and further insulated. It is characterized by comprising a conductive shield film that is formed to cover the basic conductive layer via a film and shields the basic conductive layer from the influence of the electric charge of the surface protective layer.
本発明によれば、基幹導電層はシールド膜によって表面
保護層の電荷の影響からシールドされるので、基幹導電
層の抵抗を高くすることが可能になる。According to the present invention, the basic conductive layer is shielded from the influence of the electric charge of the surface protective layer by the shield film, so that it is possible to increase the resistance of the basic conductive layer.
以下、添付図面の第１図ないし第５図を参照して、本発
明の詳細な説明する。なお、図面の説明において同一要
素には同一符号を付し、重複する説明を省略する。Hereinafter, the present invention will be described in detail with reference to FIGS. 1 to 5 of the accompanying drawings. In addition, in the description of the drawings, the same elements are given the same reference numerals, and redundant description will be omitted.
第１図は実施例に係る入射位置検出用半導体装置の平面
図である。図示の通り、半導体基板１の表面側である入
射面の短辺側両端部には一対の位置信号電極２ａ、２ｂ
が設けられ、これらの間の入射面の長辺側端部には基幹
導電層３が形成されている。基幹導電層３からは入射面
方向に延びるように分枝導電層４が形成されているが、
これは互いに等間隔で複数本となっている。そして、基
幹導電層３の上にはシールド膜５’ａ、５ｂがそれぞれ
位置信号電極２ａ、２ｂに接続して設けられている。FIG. 1 is a plan view of a semiconductor device for detecting an incident position according to an embodiment. As shown in the figure, a pair of position signal electrodes 2a and 2b are provided at both ends of the short side of the entrance plane, which is the front side of the semiconductor substrate 1.
are provided, and a basic conductive layer 3 is formed at the long side end of the incident surface between these. A branch conductive layer 4 is formed extending from the main conductive layer 3 in the direction of the incident plane.
There are multiple pieces spaced equally apart from each other. Shield films 5'a and 5b are provided on the basic conductive layer 3 and connected to the position signal electrodes 2a and 2b, respectively.
上記実施例の装置の詳細な構成を、第２図の平面図およ
びＡ−Ａ線断面図により説明する。The detailed structure of the apparatus of the above embodiment will be explained with reference to a plan view and a sectional view taken along the line A--A in FIG.
例えば、各辺が１〜５０關のｎ型のシリコンからなる半
導体基板１の表面側には、ｌＸ１０１３〜１０１４ｃＩ
Ｉ＋−２程度にｐ型不純物を注入した基幹導電ｍ１（０
，５〜１，０μｍ程度の深さで形成され、同様の工程に
よって分枝導電層４が５μｍ程度のピッチで０，５〜１
μｍ程度の深さに形成される。For example, on the surface side of the semiconductor substrate 1 made of n-type silicon with sides of 1 to 50 degrees, lX1013 to 1014 cI
The basic conductor m1 (0
, 5 to 1.0 μm in depth, and the branched conductive layer 4 is formed in a similar process to a depth of 0.5 to 1.0 μm at a pitch of approximately 5 μm.
It is formed to a depth of about μm.
入射面の両端には１×１０１８〜１０１９ｃｌｌ−２程
度にｐ型不純物を注入したオ・−ミックコンタクト領域
６ａ、６ｂが形成され、これらは上記の基幹導電層３と
接続されている。これらの上には、例えば熱酸化５１０
２からなる絶縁Ｈ７が形成され、オーミックコンタクト
領域６ａ、６ｂ上の絶縁膜７の開口を介して、例えばア
ルミニウムからなるへ置信号電極２ａ、２ｂとのオーミ
ック接触がとられている。At both ends of the incident surface, ohmic contact regions 6a and 6b into which p-type impurities are implanted to a concentration of about 1.times.10.sup.18 to 10.sup.19 cll.sup.2 are formed, and these are connected to the basic conductive layer 3 described above. Above these, for example, thermal oxidation 510
An insulator H7 made of 2 is formed, and ohmic contact is made with the lower signal electrodes 2a and 2b made of aluminum, for example, through openings in the insulating film 7 on the ohmic contact regions 6a and 6b.
一方、例えばアルミニウムからなるシールド膜５ａ、５
ｂは、それぞれ位置信号電極２ａ、２ｂと一体的に形成
されて基幹導電層３の上を覆い、中間部において互いに
分離されている。そして、これらの上には例えばエポキ
シ樹脂からなる表面保護層８が塗布形成され、その開口
（図示せず）を介してワイヤ９ａ、９ｂが位置信号電極
２Ｂ。On the other hand, shield films 5a, 5 made of aluminum, for example.
b are formed integrally with the position signal electrodes 2a and 2b, respectively, and cover the basic conductive layer 3, and are separated from each other in the middle. A surface protection layer 8 made of, for example, epoxy resin is coated on these, and wires 9a and 9b are connected to the position signal electrodes 2B through openings (not shown) of the surface protection layer 8.
２ｂにボンディングされている。半導体基板１の裏面側
ニハ、例えばｌＸ１０１９〜１ｏ２０ｃＩ１１−２程度
のｎ型不純物を含むオーミックコンタクト層１゜が形成
され、この表面には裏面電極１１がオーミック接触して
設けられる。It is bonded to 2b. On the back side of the semiconductor substrate 1, an ohmic contact layer 1° containing an n-type impurity of, for example, 1X1019 to 1020cI11-2 is formed, and a back electrode 11 is provided in ohmic contact with this front side.
次に、上記実施例の装置の作用を説明する。Next, the operation of the apparatus of the above embodiment will be explained.
例えば、赤外線スポットが表面側から入射されると、こ
れは表面保護層８および絶縁膜７を透過して半導体基板
１の入射面に達する。これにより半導体基板１で電子／
正孔対が発生すると、電子はオーミックコンタクト層１
０および裏面電極１１側へ流れ、正孔はｐ型の分枝導電
層４に流れ込む。そして、この正孔による光−電流は分
枝導電層４を通って基幹導電層３に流れ、この流入点か
ら位置信号電極２ａ、２ｂまでの距離の比に応じた抵抗
比により分割され“る。For example, when an infrared spot is incident from the front surface side, it passes through the surface protection layer 8 and the insulating film 7 and reaches the incident surface of the semiconductor substrate 1 . As a result, the semiconductor substrate 1 receives electrons/
When hole pairs are generated, electrons are transferred to the ohmic contact layer 1.
0 and the back electrode 11 side, and the holes flow into the p-type branched conductive layer 4. The photocurrent generated by the holes flows through the branched conductive layer 4 to the main conductive layer 3, and is divided by a resistance ratio corresponding to the ratio of the distances from this inflow point to the position signal electrodes 2a and 2b. .
ここで、基幹導電層３を覆うシールド膜５ａ。Here, a shield film 5a covering the basic conductive layer 3.
５ｂは入射面の端部に設けられているので、シールド膜
５ａ、５ｂの材料としてアルミニウムなどを用いたとき
にも入射光は遮ぎられることがない。Since the shield film 5b is provided at the end of the incident surface, the incident light is not blocked even when aluminum or the like is used as the material for the shield films 5a and 5b.
従って、受光感度は低下することがない。また、表面保
護層８にＮａ などの電荷があるときにも、基幹導電
層３はシールド膜５ａ、５’ｂによってシールドされる
ので、抵抗値が変化することはなくなる。従って、光電
流の抵抗分割は精度よくなされるので、検出感度の向上
が可能になる。なお、シールド膜５ａ、５ｂが存在する
ことにより基幹導電層３の抵抗が変動すると、位置検出
そのものが精度よく行なえなくなるので、基幹導電層３
の不純物濃度は例えばＩ Ｘ １０１３ａｎ−２程度以
上であることが望ましい。Therefore, the light receiving sensitivity does not decrease. Further, even when the surface protective layer 8 has charges such as Na, the basic conductive layer 3 is shielded by the shield films 5a and 5'b, so that the resistance value does not change. Therefore, since the resistive division of the photocurrent is performed with high precision, it is possible to improve the detection sensitivity. Note that if the resistance of the basic conductive layer 3 changes due to the presence of the shield films 5a and 5b, position detection itself cannot be performed accurately.
It is desirable that the impurity concentration is, for example, about I x 1013an-2 or more.
次に、第３図を参照して変形例を説明する。Next, a modification will be explained with reference to FIG.
同図（ａ）は、半導体基板１の中央部に切り欠き２１を
設けた例である。このようにすれば、切り欠き２１の部
分に例えばレーザーダイオードのような発光素子を設置
できるので、傾きセンサなどにも用いることができる。FIG. 2A shows an example in which a notch 21 is provided in the center of the semiconductor substrate 1. In this way, a light emitting element such as a laser diode can be installed in the notch 21, so that it can also be used as a tilt sensor.
具体的には、切り欠き２１に設けたレーザーダイオード
からの光を被ｎ１定物に当て、その反射光を受けるよう
にしたときに、被測定物の前後移動（光軸方向の移動）
の影゛響を少なくできる。Specifically, when the light from the laser diode provided in the notch 21 is applied to the object n1 and the reflected light is received, the object to be measured moves back and forth (movement in the optical axis direction).
The impact of this can be reduced.
同図（ｂ）、（−Ｃ）はスポット光の当たらない部分に
分枝導電層４を設けないようにした例であ ゛る。この
ようにすれば、半導体基板１と基幹導電層３および分枝
導電層４によるｐｎ接合の総面積を少なくできるので、
リーク電流を抑えて感度を向上できる。また、ｐｎ接合
容量も少なくなるので、高速、高周波の検出に適してい
る。Figures (b) and (-C) are examples in which the branched conductive layer 4 is not provided in areas not hit by the spotlight. In this way, the total area of the pn junction between the semiconductor substrate 1, the main conductive layer 3, and the branch conductive layer 4 can be reduced.
Sensitivity can be improved by suppressing leakage current. Furthermore, since the pn junction capacitance is reduced, it is suitable for high-speed, high-frequency detection.
次に、第４図および第５図を参照して、他の変形例を説
明する。Next, other modifications will be described with reference to FIGS. 4 and 5.
第４図に示す例では、基幹導電層３が入射面の中央部に
設けられており、その上には透明なシールｌ’１ｉ１５
ａ、５ｂが設けられている。この透明なシールド膜５ａ
、５ｂは導電性を有し、それぞれ位置信号電極２ａ、
２ｂに接続されている。この例によっても、第１図お
よび第２図に示した実施例と同等の効果がある。In the example shown in FIG. 4, the basic conductive layer 3 is provided in the center of the incident surface, and a transparent seal
a and 5b are provided. This transparent shield film 5a
, 5b are electrically conductive, and the position signal electrodes 2a, 5b are electrically conductive, respectively.
2b. This example also provides the same effects as the embodiments shown in FIGS. 1 and 2.
第５図に示す例では、分枝導電層４の間隔が入射面にお
ける位置によって異なっている。これは、入射位置によ
って要求される分解能が異なる場合などに用いるのに適
している。In the example shown in FIG. 5, the spacing between the branched conductive layers 4 varies depending on the position on the incident plane. This is suitable for use when the required resolution differs depending on the incident position.
本発明は上記実施例および変形例に限定されず、種々の
態様が可能である。The present invention is not limited to the above embodiments and modifications, and various embodiments are possible.
例えば、シールド膜５ａ、５ｂは位置信号電極２ａ、２
ｂに接続せずに、半導体基板１に接続したり、別途の電
極を介して外部のアースに接続してもよい。また、半導
体基板１などの材料や基幹導電層３、分枝導電層４の不
純物濃度も、例示のものに限られない。さらに、基幹導
電層３は半導体基板１の表面にポリシリコンを被着形成
したり、ＳｎＯ□等の金属薄膜を形成したりすることに
よっても実現できる。そして、このポリシリコン膜や金
属薄膜による基幹導電層３に分枝導電層４を接続すれば
、光電流は実施例と同様に抵抗分割されることになる。For example, the shield films 5a, 5b are the position signal electrodes 2a, 2
It may be connected to the semiconductor substrate 1 without being connected to b, or may be connected to external ground via a separate electrode. Further, the materials of the semiconductor substrate 1 and the impurity concentrations of the main conductive layer 3 and the branch conductive layers 4 are not limited to those illustrated. Furthermore, the basic conductive layer 3 can also be realized by depositing polysilicon on the surface of the semiconductor substrate 1 or by forming a metal thin film such as SnO□. If branch conductive layers 4 are connected to the main conductive layer 3 made of polysilicon film or metal thin film, the photocurrent will be divided by resistance as in the embodiment.
以上、詳細に説明した通り本発明では、基幹導電層はシ
ールド膜によって表面保護層の電荷の影響からシールド
されるので、基幹導電層の抵抗を高くすることが可能に
なる。従って、表面保護層が積層されて用いられるとき
にも、位置検出感度を高くできるという効果を奏する。As described in detail above, in the present invention, the basic conductive layer is shielded from the influence of the charge of the surface protective layer by the shield film, so that it is possible to increase the resistance of the basic conductive layer. Therefore, even when the surface protective layer is used in a laminated manner, the position detection sensitivity can be increased.
第１図は本発明の実施例に係る入射位置検出用半導体装
置の平面図、第２図は第１図の拡大図および断面図、第
３図は変形例の平面図、第４図および第５図は他の変形
例の断面図である。
１・・・半導体基板、２ａ、２ｂ・・・位置信号電極、
３・・・基幹導電層、４・・・分枝導電層、５ａ、５ｂ
・・・シールド膜、６ａ、６ｂ・・・オーミックコンタ
クト領域、７・・・絶縁膜、８・・・表面保護層、９ａ
、９ｂ・・・ワイヤ、１０・・・オーミックコンタクト
層、１１・・・裏面電極、２１・・・切り欠き。
特許出願人 浜松ホトニクス株式会社代理人弁理士
長谷用 芳 樹実施例の平面図
第】図
第４図1 is a plan view of a semiconductor device for detecting an incident position according to an embodiment of the present invention, FIG. 2 is an enlarged view and sectional view of FIG. 1, FIG. 3 is a plan view of a modified example, and FIGS. FIG. 5 is a sectional view of another modification. 1... Semiconductor substrate, 2a, 2b... Position signal electrode,
3... Basic conductive layer, 4... Branch conductive layer, 5a, 5b
... Shield film, 6a, 6b... Ohmic contact region, 7... Insulating film, 8... Surface protection layer, 9a
, 9b... Wire, 10... Ohmic contact layer, 11... Back electrode, 21... Notch. Patent applicant Hamamatsu Photonics Co., Ltd. Representative Patent Attorney
Plan view of Yoshiki Hase's embodiment Fig. 4
Claims (1)
両端に設けられた一対の位置信号電極と、この一対の位
置信号電極を高い抵抗で接続するように前記半導体基板
に形成された基幹導電層と、この基幹導電層から前記入
射面に延びるように形成された反対導電型の不純物を含
む複数の分枝導電層と、絶縁膜を介して前記基幹導電層
を覆うように形成され、表面保護層の電荷の影響から前
記基幹導電層をシールドする導電性のシールド膜とを備
えることを特徴とする入射位置検出用半導体装置。A semiconductor substrate of one conductivity type, a pair of position signal electrodes provided at both ends of the incident surface of this semiconductor substrate, and a basic conductor formed on the semiconductor substrate so as to connect the pair of position signal electrodes with high resistance. a plurality of branched conductive layers containing impurities of opposite conductivity type and extending from the base conductive layer to the incident surface; A semiconductor device for detecting an incident position, comprising a conductive shield film that shields the basic conductive layer from the influence of charges of the protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62273673A JPH01115169A (en) | 1987-10-29 | 1987-10-29 | Semiconductor device for incident position detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62273673A JPH01115169A (en) | 1987-10-29 | 1987-10-29 | Semiconductor device for incident position detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01115169A true JPH01115169A (en) | 1989-05-08 |
Family
ID=17530950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62273673A Pending JPH01115169A (en) | 1987-10-29 | 1987-10-29 | Semiconductor device for incident position detection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01115169A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000022680A1 (en) * | 1998-10-13 | 2000-04-20 | Hamamatsu Photonics K.K. | Semiconductor position sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50102280A (en) * | 1974-01-09 | 1975-08-13 | ||
| JPS5242076A (en) * | 1975-09-29 | 1977-04-01 | Toshiba Corp | Semiconductor |
| JPS5917288A (en) * | 1982-07-20 | 1984-01-28 | Hamamatsu Tv Kk | Semiconductor device for incident position detection |
-
1987
- 1987-10-29 JP JP62273673A patent/JPH01115169A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50102280A (en) * | 1974-01-09 | 1975-08-13 | ||
| JPS5242076A (en) * | 1975-09-29 | 1977-04-01 | Toshiba Corp | Semiconductor |
| JPS5917288A (en) * | 1982-07-20 | 1984-01-28 | Hamamatsu Tv Kk | Semiconductor device for incident position detection |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000022680A1 (en) * | 1998-10-13 | 2000-04-20 | Hamamatsu Photonics K.K. | Semiconductor position sensor |
| EP1071140A1 (en) * | 1998-10-13 | 2001-01-24 | Hamamatsu Photonics K.K. | Semiconductor position sensor |
| EP1071140A4 (en) * | 1998-10-13 | 2002-08-21 | Hamamatsu Photonics Kk | Semiconductor position sensor |
| US6573488B1 (en) | 1998-10-13 | 2003-06-03 | Hamamatsu Photonics K.K. | Semiconductor position sensitive detector |
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