JPH01112804A - Variable resistor circuit - Google Patents
Variable resistor circuitInfo
- Publication number
- JPH01112804A JPH01112804A JP26967087A JP26967087A JPH01112804A JP H01112804 A JPH01112804 A JP H01112804A JP 26967087 A JP26967087 A JP 26967087A JP 26967087 A JP26967087 A JP 26967087A JP H01112804 A JPH01112804 A JP H01112804A
- Authority
- JP
- Japan
- Prior art keywords
- superconduction
- resistance
- circuit
- current source
- substances
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 9
- 229910020012 Nb—Ti Inorganic materials 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 6
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 108091064702 1 family Proteins 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体集積回路装置等の定電流源における可
変抵抗回路に関するものであり、定電流源の電流量制御
のための可変抵抗回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a variable resistance circuit in a constant current source of a semiconductor integrated circuit device, etc., and relates to a variable resistance circuit for controlling the amount of current of a constant current source. be.
従来の技術
半導体集積回路装置における従来の定電流源を第２図を
参照しながら説明する。半導体集積回路装置における従
来の定電流源では、ポリシリコン抵抗９とイオン注入抵
抗４、それにトランジスタ５とトランジスタ６のベース
・エミッタ間によりて分圧された前記トランジスタ５の
ベース電圧が、トランジスタ７のベースへ与えられ、イ
オン注入抵抗８によシ定電流を得ている回路において、
前記ポリシリコン抵抗９をトリミングすることによって
抵抗値を増大させ、電流量を減少させていた。2. Description of the Related Art A conventional constant current source in a semiconductor integrated circuit device will be explained with reference to FIG. In a conventional constant current source in a semiconductor integrated circuit device, the base voltage of the transistor 5, which is divided by the polysilicon resistor 9, the ion implanted resistor 4, and between the base and emitter of the transistors 5 and 6, is divided by the base voltage of the transistor 7. In the circuit that is applied to the base and obtains a constant current through the ion implantation resistor 8,
By trimming the polysilicon resistor 9, the resistance value is increased and the amount of current is decreased.
発明が解決しようとする問題点
半導体集積回路装置における従来の定電流源では、トリ
ミング抵抗の抵抗値を増大させることができなかった為
、電流量を増大させることができなかった。Problems to be Solved by the Invention With conventional constant current sources in semiconductor integrated circuit devices, the resistance value of the trimming resistor cannot be increased, and therefore the amount of current cannot be increased.
本発明は従来の技術がもつ、以上のような問題点を解消
させ、電流量を増減させることのできる半導体集積回路
装置等の定電流源における可変抵抗回路を提供すること
を目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems of the conventional technology and to provide a variable resistance circuit for a constant current source such as a semiconductor integrated circuit device, which can increase or decrease the amount of current.
問題点を解決するだめの手段
この目的を達成させるために、本発明は次のような構成
としている。すなわち、半導体集積回路装置の定電流源
を構成する際に、可変抵抗回路として臨界温度の異なる
複数の超電導物質を直列に接続し、温度を変化させるこ
とにより、抵抗回路の抵抗値を変化させ、電流量を増減
するものである。Means for Solving the Problems In order to achieve this object, the present invention has the following configuration. That is, when configuring a constant current source of a semiconductor integrated circuit device, a plurality of superconducting materials having different critical temperatures are connected in series as a variable resistance circuit, and the resistance value of the resistance circuit is changed by changing the temperature. It increases or decreases the amount of current.
作 用
定電流源の電流量は、電流源に与える電圧を制御するこ
とによって増減させることが可能ぐちる。The amount of current of the constant current source can be increased or decreased by controlling the voltage applied to the current source.
そこで、電流源に与える電圧を、臨界温度の異なる複数
の超電導物質を直列に接続し、温度を変化させることに
よシ、抵抗回路の抵抗値を変化させ、電流源に与える電
圧を制御し、定電流源の電流量を増減させることができ
る。Therefore, the voltage applied to the current source can be controlled by connecting multiple superconducting materials with different critical temperatures in series and changing the temperature, thereby changing the resistance value of the resistance circuit and controlling the voltage applied to the current source. The amount of current of the constant current source can be increased or decreased.
実施例
以下、本発明の一実施例を第１図を参照しながら更に詳
しく説明する。第１図において、１〜３は臨界温度の異
なる超電導物質であり、温度を変化させることによシ、
前記超電導物質１〜３によって構成された抵抗回路の抵
抗値が変化する。その抵抗回路とイオン注入抵抗４、そ
れにトランジスタ５とトランジスタ６のペース・エミッ
タ間によって分圧される前記トランジスタ５のベース電
１゛圧、すなわち電流源に与える電圧を制御し、定電流
源の電流量を増減させることができる。EXAMPLE Hereinafter, an example of the present invention will be explained in more detail with reference to FIG. In Figure 1, 1 to 3 are superconducting materials with different critical temperatures, and by changing the temperature,
The resistance value of the resistance circuit constituted by the superconducting materials 1 to 3 changes. The base voltage of the transistor 5, which is divided by the resistance circuit, the ion implantation resistor 4, and between the pace emitters of the transistors 5 and 6, that is, the voltage applied to the current source, is controlled, and the current of the constant current source is controlled. The amount can be increased or decreased.
なお、ここで使用する超電導物質としてはＮｂ−８ｎよ
りなる化合物、Ｎｂ−Ｔｉよシなる合金、Ｙ −Ｂ ａ
−Ｃｕ−０や５ｒ−Ｂａ−Ｙ−Ｃｕ−０よシなるセラ
ミックス、他の有機超電導体物質等、超電導状態で零抵
抗を示すものであればどのような組成であっても実現可
能である。The superconducting materials used here include a compound consisting of Nb-8n, an alloy consisting of Nb-Ti, and Y-B a
- Any composition can be realized as long as it exhibits zero resistance in the superconducting state, such as ceramics such as Cu-0 and 5r-Ba-Y-Cu-0, and other organic superconducting materials. .
発明の効果
本発明による半導体集積回路装置等の定電流源における
可変抵抗回路は、以上のような構成よりなるものであり
、臨界温度の異なる複数の超電導物質を直列に接続し、
温度を変化させることにより、抵抗回路の抵抗値を変化
させることができる。Effects of the Invention The variable resistance circuit in a constant current source of a semiconductor integrated circuit device or the like according to the present invention has the above-described configuration, and includes a plurality of superconducting materials having different critical temperatures connected in series,
By changing the temperature, the resistance value of the resistance circuit can be changed.
第１図は本発明の半導体集積回路装置の定電流源におけ
る可変抵抗回路の一実施例を示す回路図、第２図は半導
体集積回路装置の従来の定電流源を示す回路図である。
１〜３・・・・・・超電導物質、４．８・・・・・・イ
オン注入７抵抗、６〜７・・・・・・トランジスタ、９
・・・・・・ポリシリコン抵抗。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ｌ〜
３−−−苅イ云）１家）ａ寧１
第 ｌ 図 ４．、Ｓ’−一一イオン
注入拒、抗５〜７−−− トランシ゛スタFIG. 1 is a circuit diagram showing an embodiment of a variable resistance circuit in a constant current source of a semiconductor integrated circuit device according to the present invention, and FIG. 2 is a circuit diagram showing a conventional constant current source of a semiconductor integrated circuit device. 1-3...Superconducting material, 4.8...Ion implantation 7 Resistor, 6-7...Transistor, 9
...Polysilicon resistor. Name of agent: Patent attorney Toshio Nakao and 1 other person
3----Karu Yiyun) 1 family) aning 1 Fig. 4. , S'-11 ion implantation rejection, anti-5~7---transistor
Claims (1)
度を変化させることにより、抵抗回路の抵抗値を変化さ
せることを特徴とする可変抵抗回路。A variable resistance circuit characterized by connecting multiple superconducting materials with different critical temperatures in series and changing the temperature to change the resistance value of the resistance circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26967087A JPH01112804A (en) | 1987-10-26 | 1987-10-26 | Variable resistor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26967087A JPH01112804A (en) | 1987-10-26 | 1987-10-26 | Variable resistor circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01112804A true JPH01112804A (en) | 1989-05-01 |
Family
ID=17475572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26967087A Pending JPH01112804A (en) | 1987-10-26 | 1987-10-26 | Variable resistor circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01112804A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8777864B2 (en) | 2005-12-27 | 2014-07-15 | Omron Healthcare Co., Ltd. | Cuff for blood pressure monitor and blood pressure monitor having the same |
-
1987
- 1987-10-26 JP JP26967087A patent/JPH01112804A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8777864B2 (en) | 2005-12-27 | 2014-07-15 | Omron Healthcare Co., Ltd. | Cuff for blood pressure monitor and blood pressure monitor having the same |
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