JPH01104767A - Sputtering target - Google Patents
Sputtering targetInfo
- Publication number
- JPH01104767A JPH01104767A JP25972187A JP25972187A JPH01104767A JP H01104767 A JPH01104767 A JP H01104767A JP 25972187 A JP25972187 A JP 25972187A JP 25972187 A JP25972187 A JP 25972187A JP H01104767 A JPH01104767 A JP H01104767A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mold
- target
- prescribed
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims description 5
- 239000000203 mixture Substances 0.000 claims abstract description 27
- 238000007711 solidification Methods 0.000 claims abstract description 9
- 230000008023 solidification Effects 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 238000005266 casting Methods 0.000 claims abstract description 3
- 239000000470 constituent Substances 0.000 claims 1
- 239000000956 alloy Substances 0.000 abstract description 10
- 229910045601 alloy Inorganic materials 0.000 abstract description 10
- 230000008018 melting Effects 0.000 abstract description 10
- 238000002844 melting Methods 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000005755 formation reaction Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 239000000654 additive Substances 0.000 abstract description 3
- 230000000996 additive effect Effects 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000005242 forging Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000006210 lotion Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は薄＠製造装置の蒸発源に好適なスパッタリング
ターゲットに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering target suitable as an evaporation source for a thin@ manufacturing apparatus.
従来のターゲットには、特開昭６２−６０８６４号およ
び特開昭６２−８６１５９号公報に記載のように、基盤
上に成膜させるべき合金の均一組成ターゲット、あるい
は、互いに異なる材料を組み合わせて一体化した複合タ
ーゲットが用いられていた。Conventional targets include targets with a uniform composition of alloys to be deposited on a substrate, or targets with a uniform composition of alloys to be formed into a film on a substrate, as described in JP-A-62-60864 and JP-A-62-86159; A complex target was used.
上記従来技術の合金ターゲットでは、ターゲットの厚さ
方向での組成比について配慮されておらず、成膜回数が
多くなるにつれて、膜組成がずれてくるという問題があ
った。また、複合ターゲットでは、材質によるスパッタ
率のちがいにより、安定性のよい成膜を行うことができ
ないという欠点があり、更に、冷却を必要とするターゲ
ラ１−には適用できないという問題があった。In the alloy target of the prior art described above, no consideration was given to the composition ratio in the thickness direction of the target, and there was a problem that the film composition deviated as the number of film formations increased. In addition, composite targets have the disadvantage that stable film formation cannot be performed due to differences in sputtering rate depending on the material, and furthermore, they cannot be applied to targeters 1-, which require cooling.
本発明の目的は、成膜回数が多くなっても、膜組成がず
れることなく、常に、一定組成の膜を形成できることを
特徴とする一体型スバッタリングターゲットを提供する
ことにある。An object of the present invention is to provide an integrated sputtering target that is capable of always forming a film of a constant composition without changing the film composition even if the number of film formations increases.
スパッタリングにおいて、被スパツタ粒子は余弦則に従
った角度分布を持ってターゲットから飛び出す。この余
弦則は個々の元素により異なっている。In sputtering, particles to be sputtered fly out from a target with an angular distribution according to the cosine law. This cosine law differs depending on the individual element.
スパッタリング回数が多くなると、夕′−ゲットはスパ
ッタ粒子で侵蝕され、二ローションエリアを生じてくる
。そのため、成膜を行う基盤とターゲットの相対的位置
が変化し、膜の組成がずれてくる。そこで、二ローショ
ンエリアの形成につれて、個々の元素の余弦則に応じた
組成変化をもたせることにより、スパッタリング回数が
多くなっても、膜の組成を常に一定にすることができる
。As the number of sputtering increases, the sputtered particles are eroded by the sputtered particles, resulting in a two-lotion area. As a result, the relative position of the substrate and target on which the film is formed changes, causing a shift in the composition of the film. Therefore, by changing the composition according to the cosine law of each element as the two lotion areas are formed, the composition of the film can be kept constant even if the number of sputtering operations increases.
以下、本発明の実施例を示す。第１図は本発明のターゲ
ットの厚さ方向の組成比を示し、第２図はこのターゲッ
トでスパッタリングを行ったときの膜の組成比と成膜回
数の関係を示す。Examples of the present invention will be shown below. FIG. 1 shows the composition ratio in the thickness direction of the target of the present invention, and FIG. 2 shows the relationship between the composition ratio of the film and the number of times of film formation when sputtering is performed using this target.
ここで第１図に示したターゲツト材の製造法を第３図を
用いて説明する。Ｎｉ８０００ｇ、Ｆｅ。Here, a method for manufacturing the target material shown in FIG. 1 will be explained using FIG. 3. Ni8000g, Fe.
２０００ｇをアルミするつぼに詰め、溶解炉１で高周波
溶解した。溶解後、内径１００ｍｍのアルミナ鋳型６に
鋳込んだ。このとき鋳型６は、鋳型加熱炉４により合金
の融点以上に加熱しである。2000g was packed in an aluminum crucible and high frequency melted in melting furnace 1. After melting, it was cast into an alumina mold 6 with an inner diameter of 100 mm. At this time, the mold 6 is heated by the mold heating furnace 4 to a temperature higher than the melting point of the alloy.
鋳込後、鋳型６を１２０ｍｍ／ｈの速度で下方に引き出
した。引出し後、′水冷銅チルから５ｃｍの高さにある
熱電対８が合金の融点に達したのち、−分与に５ｇの添
加材料（Ｆｅ）、３を溶湯５に添加した。添加したＦｅ
は溶湯中に溶解して、溶湯５の膜組成を、若干、高める
。添加後の溶湯の組成Ｃａは次式で示される。２は添加
装置、７は水冷銅チル。After casting, the mold 6 was pulled downward at a speed of 120 mm/h. After drawing out, after the thermocouple 8, located at a height of 5 cm from the water-cooled copper chiller, reached the melting point of the alloy, 5 g of additive material (Fe), 3, was added to the molten metal 5. Added Fe
is dissolved in the molten metal and slightly increases the film composition of the molten metal 5. The composition Ca of the molten metal after addition is shown by the following formula. 2 is an addition device, and 7 is a water-cooled copper chiller.
Ｗ 、 ＋Ｗ ｔ ｎ
ここで、Ｗ、は溶けている溶湯の重さ、Ｃヨは添加前の
溶湯のＦｅ組成、Ｗｔｎは添加したＦｅの重量である。W , +W t n Here, W is the weight of the molten metal, C is the Fe composition of the molten metal before addition, and Wtn is the weight of the added Fe.
Ｆｅの添加を二十回行いながら引き出し、その後はＦｅ
を添加しないで鋳型の引出しを行い、一方向凝固させた
。このインゴットから直径１００ｍｍ、’厚さ１０ｍｍ
のターゲットを切り出した。このターゲットでマグネト
ロンスパッタを行い、第２図の結果を得た。It is extracted while adding Fe 20 times, and then Fe
The mold was pulled out without the addition of , and unidirectional solidification was performed. This ingot has a diameter of 100mm and a thickness of 10mm.
The target was cut out. Magnetron sputtering was performed using this target, and the results shown in FIG. 2 were obtained.
次に、鍛造工程を加えた実施例を示す。Ｃ０１０６４０
ｇ、Ｎｉ３３６０ｇを溶解し、実施例と同様にして一方
向凝固させた。ＣＯの添加は水冷チルから３ｃｍの位置
が凝固してから三分与に７ｇづつ十回行った。次に、同
じく三分与に５ｇづつ六回行い、その際、所定の下降速
度で一方向凝固する。その後は添加せず一方向凝固させ
た。Next, an example in which a forging process is added will be shown. C010640
g and 3360 g of Ni were dissolved and unidirectionally solidified in the same manner as in the example. The addition of CO was carried out 10 times in three doses of 7 g after solidification at a position 3 cm from the water-cooled chiller. Next, 5 g was divided into three portions six times, and solidification was performed in one direction at a predetermined descending speed. After that, solidification was performed in one direction without adding anything.
凝固後、インゴットの上端及び下端を２０ｍｍ除去して
から１１００℃で据込鍛造を行い、直径 ４３２ｃｍ、
厚さ１４ｍｍの円板形状にした。この円板から直径３０
ｃｍ、厚さ１０ｍｍのターゲットを加工した。第４図に
製作したターゲットの厚さ方向の組成を示す。After solidification, 20 mm of the upper and lower ends of the ingot were removed, and upsetting forging was performed at 1100°C to a diameter of 432 cm.
It was made into a disk shape with a thickness of 14 mm. Diameter 30 from this disk
A target with a thickness of 10 mm and a thickness of 10 mm was processed. Figure 4 shows the composition of the manufactured target in the thickness direction.
本実施例によれば、最初一定組成のターゲットを用いて
スパッタを行い、膜組成の変化を測定すれば、その組成
変化に対応してターゲットの厚さ方向に組成を制御した
ターゲットが容易に製造できる。厚さ方向の組成は、凝
固速度、−回の添加量、添加時間々隔、鍛造比を組み合
わせることにより、任意に制御が可能である。According to this example, if sputtering is first performed using a target with a constant composition and changes in film composition are measured, a target whose composition is controlled in the thickness direction of the target in response to the composition changes can be easily manufactured. can. The composition in the thickness direction can be arbitrarily controlled by combining the solidification rate, the amount of addition, the addition time interval, and the forging ratio.
なお、本実施例は、ターゲットとしてＮｉ −Ｆｅ、Ｃ
ｏ−Ｎｉ合金としたが、合金であり、かつ溶解可能な材
料であれば、すべてのターゲットに適用できる。Note that in this example, Ni-Fe, C
Although the o-Ni alloy is used, it can be applied to any target as long as it is an alloy and can be melted.
本発明によれば１作製した膜の組成比を常に一定にでき
るので、膜の特性向上２歩留り向上及びターゲットの長
寿命化に効果がある。According to the present invention, since the composition ratio of the produced film can always be kept constant, it is effective in improving film properties, increasing yield, and extending the life of the target.
第１図は本発明の一実施例の製作したターゲットの厚さ
方向の組成の変化を示す図、第２図は、第１図で示した
ターゲットを用いて製作した薄膜の組成変化を示す図、
第３図は、第１図に示したターゲットの製造法を示す図
、第４図は第３図に示した方法で製造したインゴットを
鍛造した後に製作したターゲットの厚さ方向の組成の変
化を示す図である。
１・・・溶解炉、２・・・添加装置、３・・・添加材料
、４・・・鋳型加熱炉、５・・・溶融金属、６・・・鋳
型、７・・・水冷第１図
成順図収（回）
第４図
タールトｎｆｆｘ６向（ｍｍ）FIG. 1 is a diagram showing compositional changes in the thickness direction of a target manufactured according to an embodiment of the present invention, and FIG. 2 is a diagram showing compositional changes of a thin film manufactured using the target shown in FIG. 1. ,
Figure 3 is a diagram showing the manufacturing method of the target shown in Figure 1, and Figure 4 shows the change in composition in the thickness direction of the target manufactured after forging the ingot manufactured by the method shown in Figure 3. FIG. DESCRIPTION OF SYMBOLS 1... Melting furnace, 2... Addition device, 3... Additive material, 4... Mold heating furnace, 5... Molten metal, 6... Mold, 7... Water cooling Fig. 1 Seishun drawing collection (times) Fig. 4 tart nffx6 directions (mm)
Claims (1)
ーゲットにおいて、 深さ方向の組成比を変化させたことを特徴とするスパッ
タリング用ターゲット。 ２、特許請求の範囲第１項において、 加熱鋳型に鋳込み一方向凝固を行うにあたり、前記一方
向凝固の途中で連続的、又は、間欠的に構成元素を添加
し、銅チル上からの組成比を変化させたことを特徴とす
るスパッタリング用ターゲット。[Scope of Claims] A sputtering target comprising one or more elements, characterized in that the composition ratio in the depth direction is varied. 2. In claim 1, when performing unidirectional solidification by casting into a heated mold, constituent elements are added continuously or intermittently during the unidirectional solidification, and the composition ratio from above the copper chill is adjusted. A sputtering target characterized by a change in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25972187A JPH01104767A (en) | 1987-10-16 | 1987-10-16 | Sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25972187A JPH01104767A (en) | 1987-10-16 | 1987-10-16 | Sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01104767A true JPH01104767A (en) | 1989-04-21 |
Family
ID=17338021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25972187A Pending JPH01104767A (en) | 1987-10-16 | 1987-10-16 | Sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01104767A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014051746A (en) * | 2002-10-24 | 2014-03-20 | Honeywell Internatl Inc | Design of target capable of increasing cooling capability and decreasing deflection and deformation and related methods for the same |
| US10199203B2 (en) | 2015-05-14 | 2019-02-05 | Materion Corporation | Cobalt, iron, boron, and/or nickel alloy-containing articles and methods for making same |
-
1987
- 1987-10-16 JP JP25972187A patent/JPH01104767A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014051746A (en) * | 2002-10-24 | 2014-03-20 | Honeywell Internatl Inc | Design of target capable of increasing cooling capability and decreasing deflection and deformation and related methods for the same |
| US10199203B2 (en) | 2015-05-14 | 2019-02-05 | Materion Corporation | Cobalt, iron, boron, and/or nickel alloy-containing articles and methods for making same |
| US11101118B2 (en) | 2015-05-14 | 2021-08-24 | Materion Corporation | Cobalt, iron, boron, and/or nickel alloy-containing articles and methods for making same |
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