JPH01104632A - Production of support for magnetic recording medium - Google Patents
Production of support for magnetic recording mediumInfo
- Publication number
- JPH01104632A JPH01104632A JP26175987A JP26175987A JPH01104632A JP H01104632 A JPH01104632 A JP H01104632A JP 26175987 A JP26175987 A JP 26175987A JP 26175987 A JP26175987 A JP 26175987A JP H01104632 A JPH01104632 A JP H01104632A
- Authority
- JP
- Japan
- Prior art keywords
- support
- fine particles
- magnetic recording
- recording medium
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010419 fine particle Substances 0.000 claims abstract description 27
- 229920000642 polymer Polymers 0.000 claims abstract description 15
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 229920000620 organic polymer Polymers 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 16
- 229920001577 copolymer Polymers 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
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- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- -1 etc.) Polymers 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229920000728 polyester Polymers 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- YIJYFLXQHDOQGW-UHFFFAOYSA-N 2-[2,4,6-trioxo-3,5-bis(2-prop-2-enoyloxyethyl)-1,3,5-triazinan-1-yl]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCN1C(=O)N(CCOC(=O)C=C)C(=O)N(CCOC(=O)C=C)C1=O YIJYFLXQHDOQGW-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
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- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 2
- 229920001807 Urea-formaldehyde Polymers 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XXGPFLQHCPMRDW-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]ethanol 2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CC(=C)C(O)=O.CC(=C)C(O)=O.OCCOCCOCCO XXGPFLQHCPMRDW-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 229920001747 Cellulose diacetate Polymers 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 229920002433 Vinyl chloride-vinyl acetate copolymer Polymers 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- 150000003926 acrylamides Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- GZCGUPFRVQAUEE-SLPGGIOYSA-N aldehydo-D-glucose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O GZCGUPFRVQAUEE-SLPGGIOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- QXDMQSPYEZFLGF-UHFFFAOYSA-L calcium oxalate Chemical compound [Ca+2].[O-]C(=O)C([O-])=O QXDMQSPYEZFLGF-UHFFFAOYSA-L 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical class C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Chemical compound CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- VAKIVKMUBMZANL-UHFFFAOYSA-N iron phosphide Chemical compound P.[Fe].[Fe].[Fe] VAKIVKMUBMZANL-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical class OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical class CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Treatments Of Macromolecular Shaped Articles (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁気記録媒体用支持体の製造方法、特に、高
密度記録に適し、走行耐久性が改良された磁気記録媒体
用支持体の製造方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing a support for a magnetic recording medium, and in particular to a method for manufacturing a support for a magnetic recording medium that is suitable for high-density recording and has improved running durability. Regarding the manufacturing method.
近年、開発が進められてきている高密度記録用磁気記録
媒体においては磁気ヘッドと磁気テープとの間のいわゆ
る間隙損失を軽減させるため、磁性層の表面性をより平
滑なものとすることが要求される。この目的のためには
、磁性層の製造技術、すなわち磁性粒子の分散、塗布、
表面成形技術などの改良により磁性層の表面性を向上さ
せることが必要であると同時に、支持体の表面性を向上
させることもまた必要となる。とくに、記録密度が高く
なるにともない記録波長が小となることから、厚み損失
を逃がれるために磁性層を薄くする試みがなされてきて
いる。それにより、支持体の表面性が磁性層の表面性に
与える影響はますます大となってきている。In magnetic recording media for high-density recording, which has been developed in recent years, it is required that the surface of the magnetic layer be made smoother in order to reduce the so-called gap loss between the magnetic head and the magnetic tape. be done. For this purpose, the manufacturing technology of the magnetic layer, i.e. dispersion of magnetic particles, coating,
While it is necessary to improve the surface properties of the magnetic layer by improving surface molding techniques, it is also necessary to improve the surface properties of the support. In particular, since the recording wavelength becomes smaller as the recording density increases, attempts have been made to make the magnetic layer thinner in order to avoid thickness loss. As a result, the influence of the surface properties of the support on the surface properties of the magnetic layer is becoming increasingly large.
最近、さらに高密度記録を実現させるために、蒸着、ス
パッタリング等により、Co−Ni。Recently, in order to realize even higher density recording, Co--Ni has been developed by vapor deposition, sputtering, etc.
Co−Cr、Fe−Ni等の強磁性金属薄膜を設けた磁
気記録媒体も開発されつつあるが、磁性層が塗布型の磁
性層にくらべてはるかに薄いので上記の問題はさらに増
大している。Magnetic recording media with ferromagnetic metal thin films such as Co-Cr and Fe-Ni are being developed, but the above problems are further exacerbated because the magnetic layer is much thinner than a coated magnetic layer. .
しかしながら磁気記録媒体に使用される支持体の表面性
を向上させることは下記の理由から限界がある。つまり
、製膜して巻き取る工程において、フィルムの表面性が
良いと搬送ローラーに対する摩擦抵抗が大となり、しば
しば蛇行を起こしたり、シワが生じたりする。またフィ
ルム間の摩擦抵抗が増大し巻き取りロールの形状にユガ
ミが生じたりもする。However, there are limits to improving the surface properties of supports used in magnetic recording media for the following reasons. That is, in the process of forming and winding a film, if the surface of the film is good, the frictional resistance against the conveyance roller will be large, often causing meandering or wrinkles. Furthermore, the frictional resistance between the films increases and the shape of the take-up roll may become distorted.
前記の背反する問題点の解決のために、これまでに種々
の試みがなされてきている。たとえば特開昭53−10
9605号公報には、支持体上に熱可塑性樹脂の微粒子
を突出させ、その后溶剤にて該微粒子を溶解し、適度な
表面粗さにしその表面に磁性層を形成する方法が記載さ
れている。Various attempts have been made to solve the above-mentioned contradictory problems. For example, JP-A-53-10
Publication No. 9605 describes a method in which fine particles of thermoplastic resin are made to protrude on a support, and then the fine particles are dissolved in a solvent to give an appropriate surface roughness and form a magnetic layer on the surface. .
また、特公昭46−14555号公報には、支持体上に
ポリアミド、ポリエステル等のポリマー溶液を塗布、乾
燥させて、微小しわを形成し、その表面に磁性層を形成
する方法が記載されている。Furthermore, Japanese Patent Publication No. 46-14555 describes a method of coating a support with a solution of a polymer such as polyamide or polyester, drying it to form minute wrinkles, and forming a magnetic layer on the surface. .
特公昭47−6117号公報には、支持体上に塗布する
ポリマーとして、ポリエステル等を使って、また特公昭
50−38001号公報には、熱可塑性ポリエステル等
を使うt、特公昭46−14555号公報と同じように
表面に微小しわを形成し、その表面に磁性層を形成する
方法が記載されている。Japanese Patent Publication No. 47-6117 discloses that polyester or the like is used as the polymer to be coated on the support, Japanese Patent Publication No. 50-38001 discloses that thermoplastic polyester or the like is used, and Japanese Patent Publication No. 46-14555 discloses the use of thermoplastic polyester or the like. As in the publication, a method is described in which minute wrinkles are formed on the surface and a magnetic layer is formed on the surface.
又米国特許第4568598号明細書にはヘースそのも
のの表面をプラズマエツチングする方法が開示されてい
る。Further, US Pat. No. 4,568,598 discloses a method of plasma etching the surface of the hair hair itself.
しかし、上述の5つの方法のいずれも、樹脂そのもので
突起又は微小なしわを形成しており高密度記録用磁気記
録媒体としての満足すべき走行耐久性等の特性を安定的
に賦与しうるにはいたっていない。However, in all of the above five methods, projections or minute wrinkles are formed in the resin itself, and it is not possible to stably impart characteristics such as running durability that are satisfactory as a magnetic recording medium for high-density recording. It hasn't arrived yet.
本出願人は先に、上記問題を解決するために、放射線に
より重合可能な化合物と無機微粒子とを含有する非磁性
層を支持体上に設け、紫外線照射した下塗層に磁性層を
設けた磁気記録媒体を提案した(特開昭60−2515
10号公報)。In order to solve the above problem, the present applicant previously provided a non-magnetic layer containing a radiation-polymerizable compound and inorganic fine particles on a support, and provided a magnetic layer on the undercoat layer that was irradiated with ultraviolet rays. proposed a magnetic recording medium (Japanese Patent Application Laid-Open No. 60-2515
10).
しかしながらこの提案によって磁性層の表面性と耐久性
にかなりの改良が見られたが、その走行耐久性が十分と
は言えない問題がある。従って本発明の目的は走行耐久
性を向上せしめる磁気記録媒体用支持体の製造方法を提
供することにある。However, although this proposal has resulted in considerable improvements in the surface properties and durability of the magnetic layer, there is a problem in that its running durability is not sufficient. Therefore, an object of the present invention is to provide a method for manufacturing a support for a magnetic recording medium that improves running durability.
〔問題点を解決するための手段及び作用〕本発明者等は
上記の目的を達成する為に、非磁性支持体上に無機微粒
子を含んだポリマー層を設けた後、そのポリマーをプラ
ズマエツチングにより一部除去して、該微粒子を露出さ
せその高さをコントロールする事により磁気記録媒体の
走行耐久性を向上せしめる支持体を得ることを見出し、
本発明を達成した。[Means and effects for solving the problem] In order to achieve the above object, the present inventors provided a polymer layer containing inorganic fine particles on a non-magnetic support, and then subjected the polymer to plasma etching. It has been discovered that a support can be obtained which improves the running durability of a magnetic recording medium by partially removing the fine particles to expose the fine particles and controlling their height.
The present invention has been achieved.
即ち、本発明は非磁性支持体上に微粒子を含むポリマー
層を設けた後、該表面をプラズマエツチングにより有機
ポリマーの一部を除去して該微粒子の高さが50〜20
0人となるように露出させることを特徴とする磁気記録
媒体用支持体の製造方法である。That is, in the present invention, after a polymer layer containing fine particles is provided on a nonmagnetic support, a part of the organic polymer is removed by plasma etching the surface, and the height of the fine particles is 50 to 20 mm.
This is a method for manufacturing a support for a magnetic recording medium, which is characterized in that the support is exposed so that the number of particles is zero.
尚本発明は該微粒子として無機微粒子を用いることによ
ってより好ましい結果が得られる。In the present invention, more preferable results can be obtained by using inorganic fine particles as the fine particles.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明は特に蒸着、スパッタリング等による強磁性金属
薄膜型の磁気記録媒体に適用することが好ましい。The present invention is particularly preferably applied to magnetic recording media of ferromagnetic metal thin film type formed by vapor deposition, sputtering, or the like.
本発明に使用される微粒子を含んだポリマー層用ポリマ
ーとしては、従来公知の熱可塑性樹脂、熱硬化性樹脂又
は反応型樹脂やこれらの混合物が使用される。As the polymer for the polymer layer containing fine particles used in the present invention, conventionally known thermoplastic resins, thermosetting resins, reactive resins, and mixtures thereof are used.
熱可塑性樹脂としては軟化温度が150°C以下、平均
分子量が10,000〜200,000、重合度が約2
00〜2000程度のもので、例えば塩化ビニル酢酸ビ
ニル共重合体、塩化ビニル塩化ビニリデン共重合体、塩
化ビニルアクリロニトリル共重合体、アクリル酸エステ
ルアクリロニトリル共重合体、アクリル酸エステル塩化
ビニリデン共重合体、アクリル酸エステルスチレン共重
合体、メタクリル酸エステルアクリロニトリル共重合体
、メタクリル酸エステル塩化ビニリデン共重合体、メタ
クリル酸エステルスチレン共重合体、ウレタンエラスト
マー、ポリ弗化ビニル、塩化ビニリデンアクリロニトリ
ル共重合体、ブタジェンアクリロニトリル共重合体、ポ
リアミド樹脂、ポリビニルブラチラール、セルロース誘
導体(セルロースア・セテートプチレート、セルロース
ダイアセテート、セルローストリアセテート、セルロー
スプロビオネート、ニトロセルロース等)、スチレンブ
タジェン共重合体、ポリエステル樹脂、クロロビニルエ
ーテルアクリル酸エステル共重合体、アミノ樹脂、各種
の合成ゴム系の熱可塑性樹脂及びこれらの混合物等が使
用される。The thermoplastic resin has a softening temperature of 150°C or less, an average molecular weight of 10,000 to 200,000, and a degree of polymerization of about 2.
00 to 2000, such as vinyl chloride vinyl acetate copolymer, vinyl chloride vinylidene chloride copolymer, vinyl chloride acrylonitrile copolymer, acrylic acid ester acrylonitrile copolymer, acrylic acid ester vinylidene chloride copolymer, acrylic Acid ester styrene copolymer, methacrylic acid ester acrylonitrile copolymer, methacrylic acid ester vinylidene chloride copolymer, methacrylic acid ester styrene copolymer, urethane elastomer, polyvinyl fluoride, vinylidene chloride acrylonitrile copolymer, butadiene acrylonitrile Copolymers, polyamide resins, polyvinyl butyral, cellulose derivatives (cellulose acetate, cellulose diacetate, cellulose triacetate, cellulose probionate, nitrocellulose, etc.), styrene-butadiene copolymers, polyester resins, chlorovinyl ether Acrylic ester copolymers, amino resins, various synthetic rubber-based thermoplastic resins, and mixtures thereof are used.
熱硬化性樹脂又は反応型樹脂としては塗布液の状態では
200.000以下の分子量であり、塗布、乾燥後に加
熱することにより、縮合、付加等反応により分子量は無
限大のものとなる。又、これらの樹脂のなかで、樹脂が
熱分解するまでの間に軟化又は溶融しないものが好まし
い。具体的には例えばフェノール樹脂、エポキシ樹脂、
ポリウレタン硬化型樹脂、尿素樹脂、メラミン樹脂、ア
ルキッド樹脂、シリコン樹脂、アクリル系反応樹脂、エ
ポキシ−ポリアミド樹脂、高分子量ポリエステル樹脂と
イソシアネートプレポリマーの混合物、メタクリル酸塩
共重合体とジイソシアネートプレポリマーの混合物、ポ
リエステルポリオールとポリイソシアネートの混合物、
尿素ホルムアルデヒド樹脂、低分子量グリコール/高分
子量ジオール/トリフェニルメタントリイソシアネート
の混合物、ポリアミン樹脂及びこれらの混合物等である
。The thermosetting resin or reactive resin has a molecular weight of 200,000 or less in the state of a coating liquid, and when heated after coating and drying, the molecular weight becomes infinite due to reactions such as condensation and addition. Also, among these resins, those that do not soften or melt before the resin is thermally decomposed are preferred. Specifically, for example, phenol resin, epoxy resin,
Polyurethane curable resin, urea resin, melamine resin, alkyd resin, silicone resin, acrylic reaction resin, epoxy-polyamide resin, mixture of high molecular weight polyester resin and isocyanate prepolymer, mixture of methacrylate copolymer and diisocyanate prepolymer , a mixture of polyester polyol and polyisocyanate,
These include urea formaldehyde resin, a mixture of low molecular weight glycol/high molecular weight diol/triphenylmethane triisocyanate, polyamine resin, and mixtures thereof.
更に放射線により重合可能な化合物が好ましく使用され
以下の様なものから選ばれる。すなわち放射線により重
合可能な化合物とは炭素−炭素不飽和結合を分子中に1
個以上有する化合物であり、アクリル酸エステル類、ア
クリルアミド類、メタクリル酸エステル類、メタクリル
アミド類、アリル化合物、ビニルエーテル類、ビニルエ
ステル類、ビニル異部環化合物、N−ビニル化合物、ス
チレン類、クロトン酸類、イタコン酸類、オレフィン類
などが例としてあげられる。これらのうち好ましいもの
としてアクリロイル基またはメタクリロイル基を2個以
上含む下記の化合物があげられる。Furthermore, compounds that can be polymerized by radiation are preferably used and are selected from the following. In other words, compounds that can be polymerized by radiation have one carbon-carbon unsaturated bond in the molecule.
Acrylic esters, acrylamides, methacrylic esters, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, vinyl heterocyclic compounds, N-vinyl compounds, styrenes, crotonic acids , itaconic acids, and olefins. Among these, preferred are the following compounds containing two or more acryloyl groups or methacryloyl groups.
ジエチレングリコールジアクリレート、トリエチレング
リコールジアクリレートテトラエチレングリコールジア
クリレート、トリメチロールプロパントリアクリレート
ペンタエリスリトールテトラアクリレート、などのア
クリレート類、ジエチレングリコールジメタクリレート
、トリエチレングリコールトリメタクリレート、テトラ
エチングリコールジメタクリレート、トリメチロールプ
ロパントリメタクリレート、ペンタエリスリトールテト
ラアクリレート、などのメタクリレート類あるいはその
他の2官能以上のポリオールとアクリル酸メタクリル酸
とのエステル類、など。Acrylates such as diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, trimethylolpropane triacrylate, pentaerythritol tetraacrylate, diethylene glycol dimethacrylate, triethylene glycol trimethacrylate, tetraethine glycol dimethacrylate, trimethylolpropane triacrylate, etc. Methacrylates such as methacrylate, pentaerythritol tetraacrylate, and esters of other bifunctional or higher functional polyols with acrylic acid and methacrylic acid.
また、これらの化合物は高分子量体のものであってもよ
い。好ましくは高分子の主鎖末端あるいは側鎖にアクリ
ル酸またはメタクリル酸とのエステル結合を有する化合
物であり、これらはA、Vranckem ’Fati
pec Congress”lL 19 (1972
)に引用されている。たとえば以下に示す化合物であり
、例示した化合物のポリエステル骨格がポリウレタン骨
格、エポキシ樹脂の骨格、ポリエーテル骨格、ポリカー
ボネート骨格であってもあるいはこれらの混合された骨
格でもよい0分子量は1.000〜20,000が好ま
しいが、とくに限定されるものではない。Moreover, these compounds may be of high molecular weight. Preferably, it is a compound having an ester bond with acrylic acid or methacrylic acid at the end of the main chain or in the side chain of the polymer;
pec Congress”lL 19 (1972
) is quoted. For example, the polyester skeleton of the exemplified compound may be a polyurethane skeleton, an epoxy resin skeleton, a polyether skeleton, a polycarbonate skeleton, or a mixture of these skeletons.The molecular weight is 1.000 to 20. ,000 is preferred, but is not particularly limited.
上記の放射線照射により重合可能な化合物は単独に、ま
た任意の割合で混合して使用することができる。The above-mentioned compounds that can be polymerized by radiation irradiation can be used alone or in combination in any proportion.
特に耐熱性を必要とする場合にはトリアジン環を有する
(メタ)、7クリレ一ト化合物1例えばトリス(2−ア
クリロイロキシエチル)イソシアヌレート。In particular, when heat resistance is required, use a (meth), 7-acrylate compound having a triazine ring, such as tris(2-acryloyloxyethyl) isocyanurate.
(n−1〜5)0
本発明において使用される放射線は電子線および紫外線
である。紫外線を使用する場合には前記の化合物に光重
合開始剤を添加することが必要となる。ポリマー層の厚
さは0.1〜1μm、好ましくは0. 2〜0.8μm
である。(n-1 to 5)0 The radiation used in the present invention is an electron beam and an ultraviolet ray. When using ultraviolet light, it is necessary to add a photopolymerization initiator to the above-mentioned compound. The thickness of the polymer layer is 0.1-1 μm, preferably 0.1 μm. 2-0.8μm
It is.
本発明において、微粒子の素材としては、無機粒子とし
ては、無機粉体、もしくは研摩剤と称されるもので、α
−アルミナ、T−アルミナ、炭化ケイ素、酸化チタン、
酸化マグネシウム、リン化鉄、炭化チタン、窒化チタン
、α−とβ−酸化ケイ素、アルミニウム、蓚酸カルシウ
ム、鉄、α−酸化第1鉄、亜鉛、二酸化亜鉛、酸化第2
ニッケル、ニッケル、銅、クロミア、水酸化マグネシウ
ム、ジルコニア、イツトリア、セリア、ジルコン、酸化
アンチモンなどがある。無機粒子の使用量は、結合剤に
対し0.03〜20wt%、好ましくは0.05〜15
wt%である。In the present invention, as the material of the fine particles, the inorganic particles are those called inorganic powders or abrasives, and α
-Alumina, T-alumina, silicon carbide, titanium oxide,
Magnesium oxide, iron phosphide, titanium carbide, titanium nitride, alpha and beta silicon oxides, aluminum, calcium oxalate, iron, alpha ferrous oxide, zinc, zinc dioxide, ferric oxide
These include nickel, nickel, copper, chromia, magnesium hydroxide, zirconia, ittria, ceria, zircon, and antimony oxide. The amount of inorganic particles used is 0.03 to 20 wt%, preferably 0.05 to 15 wt% based on the binder.
It is wt%.
ポリマー中に微粒子を均一に分散する為には、シリカゾ
ル(ここではシリカゾルとは、有機溶媒中に不定形の無
水ケイ酸(シリカ)微粒子が分散されたシリカゾルをい
う)から導入されるシリカ微粒子や、上記研摩剤のオル
ガノゾルが好ましい。In order to uniformly disperse fine particles in a polymer, silica fine particles introduced from silica sol (here, silica sol refers to a silica sol in which amorphous silicic anhydride (silica) fine particles are dispersed in an organic solvent), , organosols of the above abrasives are preferred.
これらの微粒子の径としては0.01〜0.5μm、好
ましくは0.03〜0.3μmである。The diameter of these fine particles is 0.01 to 0.5 μm, preferably 0.03 to 0.3 μm.
本発明においてプラズマエツチング処理の方法としては
減圧下においてプラズマに該支持体をさらす方法である
。プラズマ種としては、アルゴン等の不活性ガス、酸素
のように支持体との反応を行うもの又はそれらの混合が
ある。In the present invention, the plasma etching method is a method of exposing the support to plasma under reduced pressure. The plasma species include an inert gas such as argon, a gas that reacts with the support such as oxygen, or a mixture thereof.
プラズマを形成するさいには、減圧にした後ガス圧10
−’torrから10−’torr、好ましくはlo−
2〜10−”Lorrとなるように02又はA「を導入
してプラズマを形成する。もちろん他のガス(N2゜C
1・・・・・・)を混入させても良い。When forming plasma, the gas pressure is reduced to 10
-'torr to 10-'torr, preferably lo-
A plasma is formed by introducing 02 or A'' so that the temperature is 2 to 10-''Lorr.Of course, other gases (N2°C
1...) may be mixed.
プラズマは、高周波のプラズマ、DCプラズマが利用で
きるが、高周波のプラズマの方が効率的に処理できる。Although high-frequency plasma and DC plasma can be used as plasma, high-frequency plasma can process more efficiently.
支持体は電気的に浮いた状態にしておくが、又はマイナ
ス電位に保持しておき、プラズマを有効に支持体に作用
させることが好ましい。The support is preferably left in an electrically floating state or held at a negative potential so that the plasma can effectively act on the support.
プラズマ処理中の支持体の温度は、支持体が変形しない
範囲が良い、一般に350 ’C以下でありPET等軟
化点の低いものは100″C以下にすることが好ましい
。The temperature of the support during plasma treatment is preferably within a range where the support does not deform, generally 350'C or less, and preferably 100'C or less for materials with a low softening point such as PET.
プラズマエツチングにより有機ポリマー層の一部は揮発
性分子となって運び去られるが高度の耐熱性を有する微
粒子は揮発性分子とならないので微粒子部分が残留する
ことになり有機ポリマー層の部分のみが削られて、凹凸
部分が出来る。凹凸の重さは50〜200人が好ましい
、50Å以下の場合は走行耐久性に対する効果が少なく
なり200Å以上である場合は出力の低下があり好まし
くない。Due to plasma etching, part of the organic polymer layer becomes volatile molecules and is carried away, but since the fine particles with a high degree of heat resistance do not become volatile molecules, the fine particles remain and only the part of the organic polymer layer is etched away. This creates uneven areas. The weight of the unevenness is preferably 50 to 200 people; if it is less than 50 Å, the effect on running durability will be reduced, and if it is more than 200 Å, the output will decrease, which is not preferable.
このような本発明は非磁性支持体上に微粒子を含んだポ
リマー層を設けた後該表面をプラズマエツチングにより
有機ポリマーの一部を除去して該微粒子の高さが50〜
200人になるように露出させることにより、磁気記録
媒体用表面とヘッドとの直接接触面積が減り、かつ無機
微粒子が適当に表面に出てくることにより走行耐久性を
増すこと出来る。In the present invention, a polymer layer containing fine particles is provided on a non-magnetic support, and then a part of the organic polymer is removed by plasma etching the surface, so that the height of the fine particles is 50 to 50 mm.
By exposing the magnetic recording medium to 200 particles, the direct contact area between the magnetic recording medium surface and the head is reduced, and the inorganic fine particles are appropriately exposed to the surface, thereby increasing the running durability.
(実 施 例〕
以下、本発明の実施例によってさらに具体的に説明する
。(Examples) Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例−1
50IIm厚のポリイミドベースの両面に次に示す処方
の塗膜を乾膜で0.7μmになるよう80w/cmの高
圧水銀灯で三秒間照射して硬化させた。Example 1 A coating film having the following formulation was applied to both sides of a polyimide base having a thickness of 50 IIm and was cured by irradiating it with a high pressure mercury lamp of 80 W/cm for 3 seconds so that the dry film thickness was 0.7 μm.
(処 方)
(イ) トリス(2アクリロイロキシエチル)イソシ
アヌレートのメチルエチルケトンlO重量%溶液・・・
・・・・・・・・・・・75重量部(ロ) ウレタンア
クリレート(分子量8000)メチルエチルケトン10
重量%液・・25重量部(ハ) シリカゾル(固形分1
0重重量、イソプロピルアルコール/メチルエチルケト
ン VoJ比1/1.平均粒径 80mμ)・・・8重
量部(ニ) ベンジルエチルケタール・・4ffiit
部次にこれを以下の条件で処理してシリカ微粒子を露出
せしめた。(Prescription) (a) Tris(2-acryloyloxyethyl) isocyanurate solution in methyl ethyl ketone 10% by weight...
......75 parts by weight (b) Urethane acrylate (molecular weight 8000) Methyl ethyl ketone 10
Weight% liquid...25 parts by weight (c) Silica sol (solid content 1
0 weight, isopropyl alcohol/methyl ethyl ketone VoJ ratio 1/1. Average particle size 80 mμ)...8 parts by weight (d) Benzyl ethyl ketal...4ffiit
This was then treated under the following conditions to expose the silica particles.
前記薄膜を形成した支持体を10−’torr以下の真
空空間に酸素ガスをl X 10−3torr、アルゴ
ンガスをl X 10−”torrを導入し、13.5
6MHzのRF(Radio Freq’uencyの
略 高周波)電圧にてブラズマを発生させる。その時の
パワーが500Wであり、その中に支持体を2分間曝し
た。プラズマのの反対側の基板温度は25°Cに設定し
た。The support with the thin film formed thereon was introduced into a vacuum space of 10-'torr or less, and oxygen gas was introduced at l x 10-3 torr and argon gas was introduced at l x 10-'' torr for 13.5
Plasma is generated using a 6 MHz RF (Radio Frequency) voltage. The power at that time was 500 W, and the support was exposed to the power for 2 minutes. The substrate temperature on the opposite side of the plasma was set at 25°C.
出来た支持体の表面にはα−ステップで観測の結果80
〜120人(平均100人)のスパイクが見られた。On the surface of the resulting support, the result of observation with α-step is 80
A spike of ~120 people (average 100 people) was seen.
これらの支持体に対してDCマグネトロンスパッタ法で
パワー密度3w/c+AにてCo−Cr膜を2000人
11に設けた。Co--Cr films were formed on these supports by DC magnetron sputtering at a power density of 3 w/c+A.
磁性膜形成後該Co−Cr膜にパーフルオロポリエーテ
ル系潤滑剤を50〜100人厚味にデイツプコートし、
乾燥後、3.5吋のフロンピーディスクに打抜き走行耐
久性テストを行った。After forming the magnetic film, the Co-Cr film is dip-coated with a perfluoropolyether lubricant to a thickness of 50 to 100 coats,
After drying, a 3.5-inch floppy disk was punched and tested for running durability.
条件はヘッド圧20g、雰囲気23°C50%RH、デ
ィスク回転eoorpn、記録周波数500Hzで記録
再生を行った。その結果走行耐久性は680万パスであ
った。規格化出力は−2,0であった。Recording and reproduction were performed under the following conditions: a head pressure of 20 g, an atmosphere of 23° C., 50% RH, a disk rotation of eoorpn, and a recording frequency of 500 Hz. As a result, the running durability was 6.8 million passes. The normalized output was -2.0.
比較例=1
実施例−1に於てプラズマ処理を施さずに以下同様にし
てサンプルを作り比較サンプルとした。Comparative Example = 1 A sample was prepared in the same manner as in Example 1 without performing the plasma treatment, and was used as a comparative sample.
これを同し条件で走行耐久性を測定したところ120万
パスであった。規格化出力は0であった。When running durability was measured under the same conditions, it was 1.2 million passes. The normalized output was 0.
実施例−2
実施例−1に於てプラズマ処理の時間を変えてシリカ微
粒子の露出の仕方を変えてサンプルを作り、走行耐久性
及び100KBPiでの出力を測実施例−2よりみて
走行耐久性と出力のバランスがとれるスパイクの平均高
さは50〜200人であることが判る。Example-2 Samples were made by changing the plasma treatment time and the exposure method of silica particles in Example-1, and the running durability and output at 100KBPi were measured.The running durability was determined from Example-2. It can be seen that the average height of the spike at which the output is balanced is between 50 and 200.
比較例−2
50μmWのポリイミドヘースのみを実施例1と同様に
プラズマ処理して平均高さを120人とした。その結果
、走行耐久性は70万回であり、規格化出力は−2,2
dBであった。Comparative Example 2 Only a 50 μmW polyimide hair was subjected to plasma treatment in the same manner as in Example 1 to give an average height of 120 people. As a result, the running durability was 700,000 times, and the normalized output was -2.2
It was dB.
Claims (1)
を設けた後、該表面をプラズマエッチングにより有機ポ
リマーの一部を除去して該微粒子の高さが50〜200
Åとなるように露出させることを特徴とする磁気記録媒
体用支持体の製造方法。(1) After providing a polymer layer containing inorganic fine particles on a non-magnetic support, a part of the organic polymer is removed by plasma etching the surface so that the height of the fine particles is 50 to 200.
1. A method for producing a support for a magnetic recording medium, the method comprising: exposing the support so that the angle of .ANG.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26175987A JPH01104632A (en) | 1987-10-19 | 1987-10-19 | Production of support for magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26175987A JPH01104632A (en) | 1987-10-19 | 1987-10-19 | Production of support for magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01104632A true JPH01104632A (en) | 1989-04-21 |
Family
ID=17366303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26175987A Pending JPH01104632A (en) | 1987-10-19 | 1987-10-19 | Production of support for magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01104632A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007086568A1 (en) * | 2006-01-30 | 2007-08-02 | Kyocera Corporation | Resin film, adhesive sheet, wiring substrates, and electronic devices |
US20120228748A1 (en) * | 2009-11-25 | 2012-09-13 | International Business Machines Corporation | Passivation layer surface topography modifications for improved integrity in packaged assemblies |
-
1987
- 1987-10-19 JP JP26175987A patent/JPH01104632A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007086568A1 (en) * | 2006-01-30 | 2007-08-02 | Kyocera Corporation | Resin film, adhesive sheet, wiring substrates, and electronic devices |
US8129623B2 (en) | 2006-01-30 | 2012-03-06 | Kyocera Corporation | Resin film, adhesive sheet, circuit board, and electronic apparatus |
JP4903723B2 (en) * | 2006-01-30 | 2012-03-28 | 京セラ株式会社 | Wiring board and electronic device |
US20120228748A1 (en) * | 2009-11-25 | 2012-09-13 | International Business Machines Corporation | Passivation layer surface topography modifications for improved integrity in packaged assemblies |
US8786059B2 (en) * | 2009-11-25 | 2014-07-22 | International Business Machines Corporation | Passivation layer surface topography modifications for improved integrity in packaged assemblies |
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