JPH01103310A - Surface acoustic wave element - Google Patents

Surface acoustic wave element

Info

Publication number
JPH01103310A
JPH01103310A JP26253487A JP26253487A JPH01103310A JP H01103310 A JPH01103310 A JP H01103310A JP 26253487 A JP26253487 A JP 26253487A JP 26253487 A JP26253487 A JP 26253487A JP H01103310 A JPH01103310 A JP H01103310A
Authority
JP
Japan
Prior art keywords
diamond
gas
acoustic wave
surface acoustic
wave element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26253487A
Inventor
Naoharu Fujimori
Takahiro Imai
Hideaki Nakahata
Original Assignee
Sumitomo Electric Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Ind Ltd filed Critical Sumitomo Electric Ind Ltd
Priority to JP26253487A priority Critical patent/JPH01103310A/en
Publication of JPH01103310A publication Critical patent/JPH01103310A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To obtain a surface acoustic wave element used at an ultrahigh frequency band by laminating a diamond-like carbon film layer, a piezoelectric layer and an electrode on a substrate and forming the diamond like layer by the gas phase synthesis method.
CONSTITUTION: The surface acoustic wave element is constituted by the substrate 1, the diamond-like carbon film layer, the piezoelectric layer 3 and the short-circuit use electrode 5. The diamond-like carbon is made of a gas such as a hydrocarbon as the raw material and synthesized on various substrates such as glass, Si or metal by the gas phase. The gas phase synthesis method of the diamond-like carbon is implemented by any of (1) the raw material gas is excited by heating an electron radiation material, (2) the gas is stimulated plasma and (3) the gas is decomposed and stimulated by light. A proper diamond-like carbon film layer is obtained by any synthesis method.
COPYRIGHT: (C)1989,JPO&Japio
JP26253487A 1987-10-16 1987-10-16 Surface acoustic wave element Pending JPH01103310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26253487A JPH01103310A (en) 1987-10-16 1987-10-16 Surface acoustic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26253487A JPH01103310A (en) 1987-10-16 1987-10-16 Surface acoustic wave element

Publications (1)

Publication Number Publication Date
JPH01103310A true JPH01103310A (en) 1989-04-20

Family

ID=17377136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26253487A Pending JPH01103310A (en) 1987-10-16 1987-10-16 Surface acoustic wave element

Country Status (1)

Country Link
JP (1) JPH01103310A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2221404A (en) * 1988-08-04 1990-02-07 Ion Tech Ltd Filter for proteinaceous materials
US5446329A (en) * 1992-09-14 1995-08-29 Sumitomo Electric Industries, Ltd. Surface acoustic wave element
US6995634B2 (en) 2003-01-29 2006-02-07 Seiko Epson Corporation Surface-acoustic-wave component adapted to electronic circuit and device, and manufacturing method therefor
US7005947B2 (en) 2003-03-26 2006-02-28 Seiko Epson Corporation Surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic instrument
JP2009239983A (en) * 2009-07-24 2009-10-15 Seiko Epson Corp Method of manufacturing surface acoustic wave device

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123225A (en) * 1979-03-15 1980-09-22 Nec Corp Elastic surface wave element
JPS5631213A (en) * 1979-08-24 1981-03-30 Matsushita Electric Ind Co Ltd Surface elastic wave element
JPS57111220A (en) * 1980-08-21 1982-07-10 Nat Res Dev Carbon layer coating method
JPS5879807A (en) * 1981-10-21 1983-05-13 Rca Corp Amorphous carbonaceous thin-film
JPS5993348A (en) * 1982-11-19 1984-05-29 Sumitomo Electric Industries Base material coated with diamond or diamond-shaped film
JPS5993869A (en) * 1982-11-19 1984-05-30 Sumitomo Electric Ind Ltd Structure coated with hard layer containing diamond
JPS59143499A (en) * 1983-02-03 1984-08-17 Sumitomo Electric Ind Ltd Speaker diaphragm
JPS6234172A (en) * 1985-08-08 1987-02-14 Ricoh Co Ltd Forming method for photosensitive drum in dry copying machine
JPS62136568A (en) * 1985-12-07 1987-06-19 Sumitomo Electric Ind Ltd Hard carbon coating method
JPS62149872A (en) * 1985-12-21 1987-07-03 Sumitomo Electric Ind Ltd Coating method with hard carbon film

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123225A (en) * 1979-03-15 1980-09-22 Nec Corp Elastic surface wave element
JPS5631213A (en) * 1979-08-24 1981-03-30 Matsushita Electric Ind Co Ltd Surface elastic wave element
JPS57111220A (en) * 1980-08-21 1982-07-10 Nat Res Dev Carbon layer coating method
JPS5879807A (en) * 1981-10-21 1983-05-13 Rca Corp Amorphous carbonaceous thin-film
JPS5993348A (en) * 1982-11-19 1984-05-29 Sumitomo Electric Industries Base material coated with diamond or diamond-shaped film
JPS5993869A (en) * 1982-11-19 1984-05-30 Sumitomo Electric Ind Ltd Structure coated with hard layer containing diamond
JPS59143499A (en) * 1983-02-03 1984-08-17 Sumitomo Electric Ind Ltd Speaker diaphragm
JPS6234172A (en) * 1985-08-08 1987-02-14 Ricoh Co Ltd Forming method for photosensitive drum in dry copying machine
JPS62136568A (en) * 1985-12-07 1987-06-19 Sumitomo Electric Ind Ltd Hard carbon coating method
JPS62149872A (en) * 1985-12-21 1987-07-03 Sumitomo Electric Ind Ltd Coating method with hard carbon film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2221404A (en) * 1988-08-04 1990-02-07 Ion Tech Ltd Filter for proteinaceous materials
US4986914A (en) * 1988-08-04 1991-01-22 Ion Tech Limited Filter for protinaceous materials
US5446329A (en) * 1992-09-14 1995-08-29 Sumitomo Electric Industries, Ltd. Surface acoustic wave element
US6995634B2 (en) 2003-01-29 2006-02-07 Seiko Epson Corporation Surface-acoustic-wave component adapted to electronic circuit and device, and manufacturing method therefor
US7005947B2 (en) 2003-03-26 2006-02-28 Seiko Epson Corporation Surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic instrument
JP2009239983A (en) * 2009-07-24 2009-10-15 Seiko Epson Corp Method of manufacturing surface acoustic wave device

Similar Documents

Publication Publication Date Title
WO1987007651A1 (en) Semiconductor manufacturing apparatus
EP0936284A3 (en) Method and apparatus for producing thin films
JPS59159167A (en) Manufacture of amorphous silicon film
GB1499857A (en) Glow discharge etching
JPH03198412A (en) Surface acoustic wave element
WO1986000093A1 (en) Method for producing diamond-like carbon layers
JPS59179152A (en) Production of thin film
JPH03177575A (en) Diamond-like film and its formation
JPS6417870A (en) Manufacture of carbon
JPH03131509A (en) Hydrogenated carbon composition
JPH04157177A (en) Method and device for producing coating film
EP0383550A3 (en) Plasma forming electrode and method of using the same
JPH01191780A (en) Thin film-forming equipment
JPS63107898A (en) Method for synthesizing diamond with plasma
JPS57167631A (en) Plasma vapor-phase growing method
JPH02208293A (en) Production of polycrystalline silicon film
JPS6192011A (en) Manufacture of surface acoustic wave element
JPS52140267A (en) Vapor epitaxial crystal growing device
JPH01198481A (en) Formation of deposited film by microwave plasma cvd
JPS55110032A (en) Method for high-frequency heated epitaxial growth
JPS62158874A (en) Multi-layered structure of thin film and its formation
JPH03236475A (en) Atmospheric plasma surface treatment
JPH04304290A (en) Phosphor and its manufacture
JPH04198482A (en) Method and device for continuously forming functional deposited film of large area by microwave plasma cvd method
JPS6462911A (en) Surface acoustic wave element