JPH01102973A - Photo-controlled superconducting device - Google Patents
Photo-controlled superconducting deviceInfo
- Publication number
- JPH01102973A JPH01102973A JP62259672A JP25967287A JPH01102973A JP H01102973 A JPH01102973 A JP H01102973A JP 62259672 A JP62259672 A JP 62259672A JP 25967287 A JP25967287 A JP 25967287A JP H01102973 A JPH01102973 A JP H01102973A
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- electrode
- electrodes
- electric field
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 8
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910005542 GaSb Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- -1 T b Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 5
- 239000013307 optical fiber Substances 0.000 abstract description 5
- 230000036211 photosensitivity Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000005685 electric field effect Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光照射により電気信号を制御する装置に係り、
特に制御する超電導電流の光感受性の向上に好適な光制
御超電導素子の構成と材料に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a device for controlling electrical signals by light irradiation,
In particular, the present invention relates to the structure and materials of a light-controlled superconducting element suitable for improving the photosensitivity of the superconducting current to be controlled.
従来、超電導電流の光による制御については、アイ・イ
ー・イー・イー、トランザクション オン マグネチッ
クス、エム ジー２１．（１９８５年）第６２２頁から
第６２５頁（ＩＥＥＥ。Conventionally, regarding the control of superconducting current by light, IE, Transaction on Magnetics, MG21. (1985) pp. 622-625 (IEEE.
Ｔｒａｎｓ、 Ｍａｇｎｅｔｉｃｓ、 ＭＡＧ ２１
、 （１９８５）ｐＰ６２２−６２５）において論じら
れている。Trans, Magnetics, MAG 21
, (1985) pP622-625).
この場合、トンネル障壁膜として、流化カドミウムを用
いている。In this case, fluidized cadmium is used as the tunnel barrier film.
上記従来技術は光感受性について配慮がなされておらず
、光照射時と遮断時の超電導電極、ソース、ドレイン間
に流れる超電導電流の変化量が小さいという問題があっ
た。これはソース、ドレインを隔てるトンネル障壁膜、
流化カドミウム中のキャリア密度が、光照射時と遮断時
で十分に変化していないためであることがわかった０本
発明の目的は、従来技術の問題点を解決し、光応答性の
大きい光制御超電導素子を提供することにある。The above-mentioned conventional technology does not take photosensitivity into consideration, and has a problem in that the amount of change in superconducting current flowing between the superconducting electrode, source, and drain during light irradiation and light interruption is small. This is a tunnel barrier film that separates the source and drain.
It was found that this is because the carrier density in fluidized cadmium does not change sufficiently between the time of light irradiation and the time of light interruption.The purpose of the present invention is to solve the problems of the prior art and to provide a material with high photoresponsivity. An object of the present invention is to provide a light-controlled superconducting device.
上記目的は、２つの超電導電極を隔てる半導体にこの２
つの超電導電極と異なる２つの電極を設け、２つの電極
により超電導電極間に流れる電流方向に直交する電場を
印加することにより達成される。The above purpose is to create a semiconductor that separates two superconducting electrodes.
This is achieved by providing one superconducting electrode and two different electrodes, and using the two electrodes to apply an electric field perpendicular to the direction of current flowing between the superconducting electrodes.
但し、上記超電導電極としてＰｂ、Ｎｂ。However, Pb and Nb are used as the superconducting electrode.
（Ｌ ａ １−Ｘ）２ Ｃｕ ０ｓ−ｙ （但しＭ＝Ｂ
ａ、Ｓｒ。(L a 1-X)2 Cu 0s-y (However, M=B
a.Sr.
Ｃａ、０．０５≦ｘ＜０．１０．Ｏ＜ｙ＜１） 。Ca, 0.05≦x<0.10. O<y<1).
ＡＢ ａｒｃｕ３Ｏ７−２ （但しＡ ＝ Ｙ 、 Ｌ
ａ 、 Ｅ ｕ 。AB arcu3O7-2 (However, A = Y, L
a, Eu.
Ｇｄ、Ｔｂ、Ｄｙ、Ｈａ、Ｅｒ、Ｔｍ、Ｙｂ。Gd, Tb, Dy, Ha, Er, Tm, Yb.
Ｌｕ、０≦ｚく１）等の材料の群より選ばれた１つ又は
それ以上の材料を用い、上記半導体として、ＭｇＯ，Ｋ
またはＮａをドープしたＭｇＯ，ＳｒＴ ｉ ０３．Ｋ
またはＮａをドープしたＳ ｒ Ｔ １０３１Ｓｉ、Ｇ
ｅ、ＧａＡｓ、Ｇａ、４ＡＱ）＜Ａｓ （０≦ｘく１）
ｔ ＧａＳｂ、ＩｎＰ、ＩｎＡｓ、ＩｎＳｂ。Using one or more materials selected from the group of materials such as Lu, 0≦zku1), as the semiconductor, MgO, K
or Na-doped MgO, SrTi 03. K
or Na-doped S r T 1031Si, G
e, GaAs, Ga, 4AQ)<As (0≦x1)
tGaSb, InP, InAs, InSb.
ＣｄＳ、ＣｄＳｅ、ＰｂＳ、ＰｂＳｅ、ＺｎＳ。CdS, CdSe, PbS, PbSe, ZnS.
Ｚｎ５ｓ等の材料の群より選ばれた１つ又はそれ以上の
材料を用いれば良い。One or more materials selected from the group of materials such as Zn5s may be used.
光照射により半導体中には電子−正孔対が生成するが、
半導体に設けられた２つの電極により電場が生じるため
、電子−正孔対は瞬時に分離し、電場方向に自由電子密
度、すなわち自由正孔密度の勾配が形成される。半導体
中のコヒーレンス長は３次元系の場合、自由キャリア密
度の３分の１乗に比例する。従ってコヒーレンス長も自
由キャリア密度の勾配に沿って変化することになる。今
、勾配方向に直交する方向に２つの超電導電極が対向し
ているので、適当な光照射・電場印加により２つの超電
導電極の半導体中のコヒーレンス長が麓なり、２つの超
電導電極間に超電導電流が流れることになる。ところで
光照射により生じる自由キャリア密度は生成した電子−
正孔対の再結合する寿命によって決まる。すなわち、寿
命が長ければ、電子、正孔はそれだけ消滅することなく
存在できるので自由キャリア密度も大きくなることにな
る。従って、２つの超電導電極間に流れる超電導電流方
向に直交する方向に電場を印加し、光照射により生じた
自由キャリア密度分布が成る電流経路に沿って一定とな
るように設定することにより、電場の効果は最大となり
光感受性の高い、光制御超電導素子が実現可能となる。Electron-hole pairs are generated in the semiconductor by light irradiation, but
Since an electric field is generated by two electrodes provided on the semiconductor, electron-hole pairs are instantaneously separated, and a gradient of free electron density, that is, free hole density is formed in the direction of the electric field. In a three-dimensional system, the coherence length in a semiconductor is proportional to the one-third power of the free carrier density. Therefore, the coherence length also changes along the gradient of free carrier density. Now, since the two superconducting electrodes are facing each other in the direction perpendicular to the gradient direction, by applying appropriate light and electric field, the coherence length of the two superconducting electrodes in the semiconductor becomes the base, and a superconducting current is generated between the two superconducting electrodes. will flow. By the way, the free carrier density caused by light irradiation is the generated electron −
It is determined by the recombination lifetime of hole pairs. In other words, the longer the lifetime, the more electrons and holes can exist without disappearing, and the free carrier density will also increase. Therefore, by applying an electric field in a direction perpendicular to the direction of the superconducting current flowing between two superconducting electrodes and setting it so that the free carrier density distribution generated by light irradiation is constant along the current path, the electric field can be reduced. The effect is maximized, and a photo-controlled superconducting device with high photosensitivity can be realized.
以下、本発明の実施例を図面を用いて詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図及び第２図は本発明の第１の実施例を示す図であ
る。半導体基板３として５ｒＴｉ０３を用い、この上に
スパッタリング法により厚さ５ｏｏｏ人のＹＢａ２Ｃｕ
３ｏ、−２（ｚく０）薄膜を堆積させ、レジスト塗布後
光りソグラフィ法によりレジストに幅１μｍの空隙を設
け、さらに化学エツチングにより、上記薄膜を加工、ソ
ース超電導電極１、ドレイン超電導電極２を作製する。1 and 2 are diagrams showing a first embodiment of the present invention. 5rTi03 is used as the semiconductor substrate 3, and YBa2Cu with a thickness of 500 mm is deposited on this by sputtering.
A 3o, -2 (z 0) thin film was deposited, and after applying a resist, a gap with a width of 1 μm was created in the resist by photolithography, and the thin film was further processed by chemical etching to form a source superconducting electrode 1 and a drain superconducting electrode 2. Create.
これを酸素雰囲気高中で９３Ｏ℃２時間熱処理した後、
アルゴン、酸素の混合プラズマで表面を処理してから抵
抗加熱蒸着法により厚さ２μｍのＣｄＳを堆積し、トン
ネル絶縁膜４を形成する。続いて化学的相成長法（ＣＶ
Ｄ法）により厚さ約５０ｎｍのＳ ｉ ０２よりなるゲ
ート絶縁膜５を形成し、さらに、アルミニウムを抵抗加
熱法により厚さ約５００ｎｍ堆積させたのちエツチング
法により加工し、第１ゲート電極及び第２ゲート電極７
を形成する。但し、第２図に示すごとく第１ゲート電極
６、第２ゲート電極７はソース超電導電極１、ドレイン
超電導電極２の一部の上に位置するように加工する。第
１ゲート電極６に、第２ゲート電極７に対して正の電圧
を印加し、第１ゲート電極６から第２ゲート電極７の−
向きに電場を生じさると、光ファイバ８から照射された
光によりトンネル絶縁膜４中で生成した電子−正孔対は
瞬時に分離し、第１ゲート電極６付近ではより多くの電
子が、第２ゲート電極７付近では逆にゆり多くの正孔が
集まり、第１ゲート電極６と第２ゲート電極７の方向に
自由キャリア密度の勾配が形成される。従って半導体中
のコヒーレンス長は第２ゲート電極７から第１ゲート電
極６へ向って長くなり、成る光照射、ゲート電圧の条件
の時。After heat-treating this in an oxygen atmosphere at 93O℃ for 2 hours,
After the surface is treated with a mixed plasma of argon and oxygen, CdS is deposited to a thickness of 2 μm by a resistance heating evaporation method to form a tunnel insulating film 4. Next, chemical phase growth method (CV
A gate insulating film 5 made of SiO2 with a thickness of about 50 nm is formed using the method D), and aluminum is further deposited to a thickness of about 500 nm using a resistance heating method, and then processed using an etching method to form the first gate electrode and the first gate electrode. 2 gate electrode 7
form. However, as shown in FIG. 2, the first gate electrode 6 and the second gate electrode 7 are processed so as to be located on part of the source superconducting electrode 1 and drain superconducting electrode 2. A positive voltage is applied to the first gate electrode 6 with respect to the second gate electrode 7, and the −
When an electric field is generated in the direction, the electron-hole pairs generated in the tunnel insulating film 4 by the light irradiated from the optical fiber 8 are instantaneously separated, and more electrons are generated in the vicinity of the first gate electrode 6. Conversely, a large number of holes gather near the second gate electrode 7, and a gradient of free carrier density is formed in the direction of the first gate electrode 6 and the second gate electrode 7. Therefore, the coherence length in the semiconductor increases from the second gate electrode 7 to the first gate electrode 6 under the following light irradiation and gate voltage conditions.
ある位置でソース超電導電極１及びドレイン超電導電極
２から染み出した超電導電子波がつながり。At a certain position, the superconducting electron waves seeping out from the source superconducting electrode 1 and the drain superconducting electrode 2 are connected.
超電導電流がこれらの電極間に流れる。さらに、今の場
合、第１ゲート電極６と第２ゲート電極７はソース超電
導電極１とドレイン超電導電極２と独立であるため、ト
ンネル絶縁４の中に任意の電場をかけることができ、特
に超電導電流の流れる方向に直交する電場をかけること
により電場効果は最大となり、光応答性の大きい光制御
超電導素子を実現できる。尚、本実施例において界ソー
ス超電導電極１．ドレイン超電導電極２としてＹＢａ２
Ｃｕ３Ｏ．ｚ （ｚ＜Ｏ）を用いたが、これに代えて、
ｐｂあるいはその合金、Ｎｂあるいはその金属間化合物
ｔ （Ｌ ａｔ−Ｍｘ）ｚｃ ｕ ０ｓ−ｙ （但しＭ
＝Ｂａ、Ｓｒ、Ｃａ、０．０５≦ｘく０．１０゜Ｑ く
ｙく）ＨＡＢ ａ２Ｃｕ３Ｏ７−ｘ （但しＡ ＝ Ｌ
ａ 。A superconducting current flows between these electrodes. Furthermore, in this case, since the first gate electrode 6 and the second gate electrode 7 are independent of the source superconducting electrode 1 and the drain superconducting electrode 2, it is possible to apply an arbitrary electric field within the tunnel insulation 4. By applying an electric field perpendicular to the direction of current flow, the electric field effect is maximized, making it possible to realize a light-controlled superconducting device with high photoresponsiveness. In this example, the field source superconducting electrode 1. YBa2 as drain superconducting electrode 2
Cu3O. z (z<O) was used, but instead of this,
pb or its alloy, Nb or its intermetallic compound t (L at-Mx)zc u 0s-y (However, M
=Ba, Sr, Ca, 0.05≦x0.10゜Q) HAB a2Cu3O7-x (However, A = L
a.
Ｅ ｕ ｇ Ｇ ｄ ｍ Ｔ ｂ ｇ Ｄ ｙ ｇ Ｈ
ｏ ＊ Ｅ ｒ ｇ Ｔ ｒｎ ｔＹｂ、Ｌｕ、０くｚ
く１）等を用いても、また、トンネル絶縁膜４として用
いたＣｄＳに代えて。E u g G d m T b g D y g H
o * E r g T rn tYb, Lu, 0kuz
1) etc., or instead of CdS used as the tunnel insulating film 4.
Ｓｘ、Ｇｅ、ＧａＡｓｅ Ｇａ、−ｚＡＱｚＡｇ （０
ＩＣＸく）、ＧａＳｂ、ＩｎＰ、ＩｎＡｓ、ＣｄＳｅ＊
ＰｂＳ、Ｐｂ５ｅｅ ＺｎＳ、Ｚｎ５ｅ等を用いても本
発明の目的を達成し、光応答性の大きい光制御超電導素
子を実現できることは言うまでもない。Sx, Ge, GaAse Ga, -zAQzAg (0
ICX), GaSb, InP, InAs, CdSe*
It goes without saying that the object of the present invention can be achieved by using PbS, Pb5ee, ZnS, Zn5e, etc., and a photocontrolled superconducting element with high photoresponsivity can be realized.
次に第３図及び第３図を用いて本発明の第２の・実施例
を説明する０本発明の第１の実施例では、ソース超電導
電極１とドレイン超電導電極２の間に幅１μｍの微小な
空隙を作る必要があったが、ソース超電導電極１．トン
ネル絶縁膜４、ドレイン超電導電極２の三層構造にする
ことにより、微細加工工程を除くこともできる。半導体
基板３として５ｒＴｉ０３を用い、この上にスパッタリ
ング法により厚さ１μｍのＹＢａ２Ｃｕ３ｏ、−、（Ｚ
２０）の薄膜を堆積させ、酸素雰囲気中で９３Ｏ℃、２
時間熱処理した後、アルゴン、酸素の混合プラズマで表
面を処理し、ドレイン超電導電極２を形成する。その後
、抵抗加熱蒸着法により厚さ１００人のＣｄＳを堆積し
、トンネル絶縁膜４を形成する。続いてアルゴン、酸素
の混合プラズマで表面を処面し、ＣｄＳのピンホールに
より露出しているＹＢａ２Ｃｕ３Ｏ７−ｚ（Ｚ２０）面
を絶縁体化した後、化学的気相成長法（ＣＶＤ法）によ
り厚さ約５０ｎｍの５ｉ０２を形成し、ドライエツチン
グ法により加工してゲート絶縁膜５を形成する。さらに
レジスト塗布、光露光、境象後、抵抗加熱蒸着により厚
さ５００人のｐｂを堆積し、リフトオフ法により、ソー
ス超電算電極１．及び第１ゲート電極６、第２ゲート電
極７を形成する。Next, a second embodiment of the present invention will be explained with reference to FIGS. Although it was necessary to create a small gap, the source superconducting electrode 1. By forming the three-layer structure of the tunnel insulating film 4 and the drain superconducting electrode 2, the microfabrication process can be omitted. 5rTi03 is used as the semiconductor substrate 3, and YBa2Cu3o, -, (Z
20) was deposited and heated at 930°C in an oxygen atmosphere for 2
After heat treatment for a period of time, the surface is treated with a mixed plasma of argon and oxygen to form a drain superconducting electrode 2. Thereafter, CdS is deposited to a thickness of 100 nm using a resistance heating evaporation method to form a tunnel insulating film 4. Next, the surface was treated with a mixed plasma of argon and oxygen, and the YBa2Cu3O7-z (Z20) surface exposed through the CdS pinhole was made into an insulator. A 5i02 film having a thickness of approximately 50 nm is formed and processed by a dry etching method to form a gate insulating film 5. Further, after resist coating, light exposure, and imaging, a 500-μm thick PB was deposited by resistance heating vapor deposition, and a lift-off method was used to deposit the source supercomputer electrode 1. Then, a first gate electrode 6 and a second gate electrode 7 are formed.
光ファイバ８をソース超電導電極１の上に配置し、光照
射すると、ソース超電導電極１は膜厚が薄いため、光は
該電極を透過、トンネル絶縁膜４に達し、該絶縁膜中で
電子−正孔対が生成する６第１ゲート電極６．第２ゲー
ト電極７に電圧を印加し。When the optical fiber 8 is placed on the source superconducting electrode 1 and irradiated with light, since the source superconducting electrode 1 is thin, the light passes through the electrode and reaches the tunnel insulating film 4, where electrons are generated in the insulating film. 6 first gate electrode where hole pairs are generated 6. A voltage is applied to the second gate electrode 7.
ソース超電導電極１とドレイン超電導電極２間に流れる
超電導電流の方向と直交する方向に電場をかけることに
より、本発明の第１の実施例と同様、電場効果は最大と
なり、光応答性の大きい光制御超電導素子が実現できた
る。尚、本実施例においてはドレイン超電導電極２とし
てＹ Ｂ ａ２Ｃｕ３Ｏｔ−ｘ（ｚ２ｏ）を用いたが、
これに代えて、ｐｂあるいはその合金、Ｎｂあるいはそ
の金属間化合物ｅ （Ｌ ａ １−Ｘ Ｍｘ）２ｃ
ｕ ０４−ｙ （但しＭ ＝ Ｂ ａ 。By applying an electric field in a direction perpendicular to the direction of the superconducting current flowing between the source superconducting electrode 1 and the drain superconducting electrode 2, the electric field effect is maximized and light with high photoresponsivity is generated, as in the first embodiment of the present invention. A controlled superconducting device has been realized. In this example, YBa2Cu3Ot-x (z2o) was used as the drain superconducting electrode 2, but
Instead of this, pb or its alloy, Nb or its intermetallic compound e (L a 1-X Mx)2c
u 04-y (However, M = Ba.
Ｓｒ、Ｃａ、０．０５≦ｘく０．１０．Ｏ＜ｙく１）。Sr, Ca, 0.05≦x0.10. O<yku1).
Ａ Ｂ ａ ２Ｃｕ３Ｏ７−ｘ （但しＡ ＝ Ｌ ａ
、 Ｅ ｕ 、 Ｇ ｄ 。A B a 2Cu3O7-x (However, A = L a
, Eu, Gd.
Ｔｂ、Ｄｙｔ Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ、０＜ｚ
＜１）等を用い、かつまたトンネル絶縁膜４として用い
たＣｄＳに代えて、Ｓｉｅ ＧｅｔＧａＡｓ、Ｇａｔ−
ｘＡＱｘＡｓ （０＜ｘく１）。Tb, Dyt Ho, Er, Tm, Yb, Lu, 0<z
<1) etc., and in place of CdS used as the tunnel insulating film 4, Sie GetGaAs, Gat-
xAQxAs (0<x×1).
Ｇａｒｂ、ＩｎＰ、ＩｎＳｂ、Ｃｄ’ｓ、ＰｂＳ。Garb, InP, InSb, Cd's, PbS.
Ｐｂ５ａ、ＺｎＳ、Ｚｎ５ｅ等を用いても、或いはまた
、ソース超電導電極１として用いたｐｂに代えて（Ｌ
ａ ｚ−ｘ Ｍｘ）ｚｃ ｕ ０４−Ｆ （但しＭ ＝
Ｂ ａ 。Even if Pb5a, ZnS, Zn5e, etc. are used, or instead of Pb used as the source superconducting electrode 1 (L
a z-x Mx)zc u 04-F (However, M =
B a.
Ｓｒ、Ｃａ、０．０５≦ｘ：０．１０，０＜ｙくｌ）。Sr, Ca, 0.05≦x:0.10, 0<ycl).
Ａ Ｂ ａｒｃ ｕｓＣ）ｔ−ｘ （但しＡ ” Ｙ
ｇ Ｌ ａ ｇ Ｅ ｕ ｅＧｄ、Ｔｂ、Ｄｙ、Ｈｏ、
Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ０≦ｚく１）等を用い、かつま
たドレイン超電導電極２として用いたＹ Ｂ ａｒｃ
ｕ３Ｏｔ−ｚ （ｚ ２０）に代えて、 （Ｌ ａ
１−Ｘ Ｍｘ）ｓｃ ｕ ０ｓ−ｙ （但し阿＝Ｂａ、
Ｓｒ、Ｃａ、０．０５＜ｘく０．１０ｔ Ｏ＜’ｊ り
１ ） ＋ Ａ Ｂ ａｒｃ ｕ３Ｏｙ−２（但しＡ
＝ Ｌ ａ 。A B arc usC) t-x (However, A ” Y
g L a g E u eGd, Tb, Dy, Ho,
Y B arc using Er, Tm, Yb, Lu0≦z 1), etc., and also used as the drain superconducting electrode 2
Instead of u3Ot-z (z 20), (La
1-X Mx) sc u 0s-y (However, A=Ba,
Sr, Ca, 0.05<x 0.10t O<'j ri1) + A Barc u3Oy-2 (However
= La.
Ｅｎ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ。En, Gd, Tb, Dy, Ho, Er, Tm.
Ｙｂ、Ｌｕ、０≦ｚ≦１）等を用い、かつまた。Yb, Lu, 0≦z≦1), and also.
トンネル絶縁膜４として用いたＣｄＳに代えて、ＭｇＯ
または５ｒＴｉＯｓまたは不純物１例えばに、Ｎａをド
ープしたＭｇＯ，５ｒＴｉＯ，等を用いても本発明の目
的を達し、光応答性の大きい光制御超電導素子を実現で
きることは言までもない。Instead of CdS used as the tunnel insulating film 4, MgO
It goes without saying that the object of the present invention can also be achieved by using 5rTiOs or the impurity 1, such as MgO doped with Na, 5rTiO, etc., and a photocontrolled superconducting element with high photoresponsivity can be realized.
次に、第５図を用いて本発明の第３の実施例を説明する
６本実施例は該光制御超電導素子１０を低温で動作する
信号処理システム、例えばジョゼフソン接合素子、ある
いは超電導トランジスタを用いた計算機等と、室温に置
かれた別の信号処理システムとの信号伝送に利用した例
である。光ファイバ８を用いて、室温に置かれた信号処
理装置からの光信号を本発明の光制御超電導素子１０に
よって検出し、第５図に示すように、ソース超電導電極
１．ドレイン超電導電極２．第１ゲート電極６第２ゲー
ト電極７を結線することにより、光入力時には低温にお
いて信号処理システムへの出力端子９は零電位に、光遮
断時には同端子は数ミリボルト程度の高電位になる。こ
れより、配線遅延の小さい高速光入力コンピュータが実
現できる。Next, a third embodiment of the present invention will be described with reference to FIG. This is an example in which the system is used for signal transmission between a computer, etc., and another signal processing system placed at room temperature. Using the optical fiber 8, an optical signal from a signal processing device placed at room temperature is detected by the optically controlled superconducting element 10 of the present invention, and as shown in FIG. 5, the source superconducting electrode 1. Drain superconducting electrode 2. By connecting the first gate electrode 6 and the second gate electrode 7, the output terminal 9 to the signal processing system has zero potential at low temperature when light is input, and the same terminal has a high potential of several millivolts when light is cut off. As a result, a high-speed optical input computer with low wiring delay can be realized.
しかも同軸ケーブルを用いて信号伝送を行なった場合に
比べて、低温側への熱の侵入が少なくなるので、冷凍に
要する装置を小型化し、かつその消費電力を小さくする
ことができる。Furthermore, compared to the case where signal transmission is performed using a coaxial cable, less heat enters into the low temperature side, so the equipment required for refrigeration can be downsized and its power consumption can be reduced.
以上説明したように、本発明によれば、２つの超電導電
極以外に２つの電極を設けることにより、半導体に任意
の電場を印加することが可能となり。As explained above, according to the present invention, by providing two electrodes in addition to the two superconducting electrodes, it becomes possible to apply any electric field to the semiconductor.
特に超電導電流に直交するように電場をかけることによ
り、自由キャリア密度分布が成る電流経路に沿って一定
、電場の効果を最大に利用できるので、高感度で光感受
性の高い光制御超電導素子が実現可能となる。In particular, by applying an electric field perpendicular to the superconducting current, the free carrier density distribution is constant along the current path, and the effect of the electric field can be maximized, making it possible to realize a photo-controlled superconducting device with high sensitivity and photosensitivity. It becomes possible.
電導素子の側面図、第２図は第１図の光制御超電導素子
の上面図、第３図は本発明の第２の実施例における光制
御超電導素子の側面図、第４図は第３図の光制御超電導
素子の上面図、第５図は光制御超電導素子を用いた光入
力コンピュータの概念を示す図である。2 is a top view of the optically controlled superconducting device shown in FIG. 1, FIG. 3 is a side view of the optically controlled superconducting device according to the second embodiment of the present invention, and FIG. 4 is a top view of the optically controlled superconducting device shown in FIG. FIG. 5 is a top view of the optically controlled superconducting element shown in FIG. 5, which shows the concept of an optical input computer using the optically controlled superconducting element.
１１０．ソース超電導電極、２・・・ドレイン超電導電
極、３・・・半導体基板、４・・・トンネル絶縁膜、５
・・・ゲート絶縁膜、６・・・第１ゲート電極、７・・
・第２ゲート電極、８・・・光ファイバ、９・・・出力
端子、１０・・・該光制御超電導素子。110. Source superconducting electrode, 2... Drain superconducting electrode, 3... Semiconductor substrate, 4... Tunnel insulating film, 5
... Gate insulating film, 6... First gate electrode, 7...
- Second gate electrode, 8... optical fiber, 9... output terminal, 10... the optically controlled superconducting element.
第７目 第２図 第３目 茅夕目7th eye Figure 2 Third eye Kayaya eyes
Claims (1)
て、少なくとも１対の超電導電極とこれらを隔てかつこ
れらに接した半導体と、この半導体中に上記１対の超電
導電極間を流れる超電導電流の少なくとも一部に直交す
るように設けられた電場を生じせしめる手段と、上記半
導体に光を入射させる手段とを含んで構成されることを
特徴とする光制御超電導素子。 ２、特許請求の範囲第１項において、前記電場を発生さ
せる手段は前記１対の超電導電極と異なり、かつ、前記
半導体上に設けられたＭＯＳまたはＭＩＳまたはＭＥＳ
構成の１対のゲート電極であることを特徴とする光制御
超電導素子。 ３、特許請求の範囲第１項において、前記１対の超電導
電極は、Ｐｂ、Ｎｂ、（Ｌａ＿１＿−＿ｘＭ＿ｘ）＿２
ＣｕＯ＿４＿−＿ｙ（但しＭ＝Ｂａ、Ｓｒ、Ｃａ、０．
０５≦ｘ≦０．１０、０≦ｙ≦１）、ＡＢａ＿２Ｃｕ＿
３Ｏ＿７＿−＿ｚ（但しＡ＝Ｙ、Ｌａ、Ｅｕ、Ｇｄ、Ｔ
ｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ、０≦ｚ≦１
）等の材料の群より選ばれた１つまたはそれ以上の材料
を用い、該半導体は、ＭｇＯ、ＫまたはＮａをドープし
たＭｇＯ、ＳｒＴｉＯ＿３、ＫまたはＮａをドープした
ＳｒＴｉＯ＿３、Ｓｉ、Ｇｅ、ＧａＡｓ、Ｇａ＿１＿−
＿ｘＡｌ＿ｘＡｓ（０≦ｘ≦１）、ＧａＳｂ、ＩｎＰ、
ＩｎＡｓ、ＩｎＳｂ、ＣｄＳ、ＣｄＳｅ、ＰｂＳ、Ｐｂ
Ｓｅ、ＺｎＳ、ＺｎＳｅ等の材料の群より選ばれた１つ
またはそれ以上の材料を用いたことを特徴とする光制御
超電導素子。[Claims] 1. In an optically controlled superconducting element that operates at low temperatures, at least one pair of superconducting electrodes, a semiconductor separating them from each other and in contact with them, and a structure in which a connection between the pair of superconducting electrodes is formed in the semiconductor. A light-controlled superconducting element comprising means for generating an electric field provided perpendicular to at least a portion of a flowing superconducting current, and means for making light incident on the semiconductor. 2. In claim 1, the means for generating the electric field is a MOS, MIS, or MES different from the pair of superconducting electrodes and provided on the semiconductor.
1. A light-controlled superconducting element comprising a pair of gate electrodes. 3. In claim 1, the pair of superconducting electrodes are made of Pb, Nb, (La_1_-_xM_x)_2
CuO_4_-_y (where M=Ba, Sr, Ca, 0.
05≦x≦0.10, 0≦y≦1), ABa_2Cu_
3O_7_-_z (However, A=Y, La, Eu, Gd, T
b, Dy, Ho, Er, Tm, Yb, Lu, 0≦z≦1
), the semiconductor is MgO, MgO doped with K or Na, SrTiO_3, SrTiO_3 doped with K or Na, Si, Ge, GaAs, Ga_1_-
_xAl_xAs (0≦x≦1), GaSb, InP,
InAs, InSb, CdS, CdSe, PbS, Pb
A light-controlled superconducting element characterized in that it uses one or more materials selected from the group of materials such as Se, ZnS, and ZnSe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62259672A JPH01102973A (en) | 1987-10-16 | 1987-10-16 | Photo-controlled superconducting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62259672A JPH01102973A (en) | 1987-10-16 | 1987-10-16 | Photo-controlled superconducting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01102973A true JPH01102973A (en) | 1989-04-20 |
Family
ID=17337297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62259672A Pending JPH01102973A (en) | 1987-10-16 | 1987-10-16 | Photo-controlled superconducting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01102973A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02244682A (en) * | 1989-03-16 | 1990-09-28 | Toshiba Corp | Superconductive element |
-
1987
- 1987-10-16 JP JP62259672A patent/JPH01102973A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02244682A (en) * | 1989-03-16 | 1990-09-28 | Toshiba Corp | Superconductive element |
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