JP7826834B2 - 化学増幅ポジ型レジスト材料及びパターン形成方法 - Google Patents

化学増幅ポジ型レジスト材料及びパターン形成方法

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Publication number
JP7826834B2
JP7826834B2 JP2022081348A JP2022081348A JP7826834B2 JP 7826834 B2 JP7826834 B2 JP 7826834B2 JP 2022081348 A JP2022081348 A JP 2022081348A JP 2022081348 A JP2022081348 A JP 2022081348A JP 7826834 B2 JP7826834 B2 JP 7826834B2
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JP2022081348A
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English (en)
Japanese (ja)
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JP2022191163A (ja
JP2022191163A5 (https=
Inventor
潤 畠山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2022081348A 2021-06-15 2022-05-18 化学増幅ポジ型レジスト材料及びパターン形成方法 Active JP7826834B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021099189 2021-06-15
JP2021099189 2021-06-15

Publications (3)

Publication Number Publication Date
JP2022191163A JP2022191163A (ja) 2022-12-27
JP2022191163A5 JP2022191163A5 (https=) 2023-01-27
JP7826834B2 true JP7826834B2 (ja) 2026-03-10

Family

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JP2022081348A Active JP7826834B2 (ja) 2021-06-15 2022-05-18 化学増幅ポジ型レジスト材料及びパターン形成方法

Country Status (2)

Country Link
US (1) US20230013624A1 (https=)
JP (1) JP7826834B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250039326A (ko) * 2022-07-15 2025-03-20 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법, 화합물, 및 고분자 화합물
JP2024157135A (ja) * 2023-04-25 2024-11-07 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
JP2025091314A (ja) * 2023-12-06 2025-06-18 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、及び高分子化合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007328060A (ja) 2006-06-06 2007-12-20 Jsr Corp パターン形成方法並びにそれに用いられる感放射線性樹脂組成物及び感放射線性酸発生基含有樹脂
JP2009145714A (ja) 2007-12-17 2009-07-02 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びこれを用いたパターン形成方法
JP2010197618A (ja) 2009-02-24 2010-09-09 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6477413B2 (ja) * 2015-10-23 2019-03-06 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR101960596B1 (ko) * 2016-06-28 2019-07-15 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
JP6973274B2 (ja) * 2017-05-22 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6973279B2 (ja) * 2017-06-14 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6922841B2 (ja) * 2017-06-21 2021-08-18 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7666365B2 (ja) * 2022-03-11 2025-04-22 信越化学工業株式会社 レジスト材料及びパターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007328060A (ja) 2006-06-06 2007-12-20 Jsr Corp パターン形成方法並びにそれに用いられる感放射線性樹脂組成物及び感放射線性酸発生基含有樹脂
JP2009145714A (ja) 2007-12-17 2009-07-02 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びこれを用いたパターン形成方法
JP2010197618A (ja) 2009-02-24 2010-09-09 Fujifilm Corp 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法

Also Published As

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US20230013624A1 (en) 2023-01-19
JP2022191163A (ja) 2022-12-27

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