JP7806091B2 - 光電変換装置 - Google Patents

光電変換装置

Info

Publication number
JP7806091B2
JP7806091B2 JP2023572273A JP2023572273A JP7806091B2 JP 7806091 B2 JP7806091 B2 JP 7806091B2 JP 2023572273 A JP2023572273 A JP 2023572273A JP 2023572273 A JP2023572273 A JP 2023572273A JP 7806091 B2 JP7806091 B2 JP 7806091B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion device
semiconductor region
depth
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023572273A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023132003A1 (https=
JPWO2023132003A5 (https=
Inventor
和浩 森本
旬史 岩田
雄 前橋
寛 関根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of JPWO2023132003A1 publication Critical patent/JPWO2023132003A1/ja
Publication of JPWO2023132003A5 publication Critical patent/JPWO2023132003A5/ja
Application granted granted Critical
Publication of JP7806091B2 publication Critical patent/JP7806091B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023572273A 2022-01-05 2022-01-05 光電変換装置 Active JP7806091B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/000071 WO2023132003A1 (ja) 2022-01-05 2022-01-05 光電変換装置

Publications (3)

Publication Number Publication Date
JPWO2023132003A1 JPWO2023132003A1 (https=) 2023-07-13
JPWO2023132003A5 JPWO2023132003A5 (https=) 2024-12-26
JP7806091B2 true JP7806091B2 (ja) 2026-01-26

Family

ID=87073557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023572273A Active JP7806091B2 (ja) 2022-01-05 2022-01-05 光電変換装置

Country Status (3)

Country Link
US (1) US20240355852A1 (https=)
JP (1) JP7806091B2 (https=)
WO (1) WO2023132003A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023178686A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013033864A (ja) 2011-08-02 2013-02-14 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
JP2020057651A (ja) 2018-09-28 2020-04-09 キヤノン株式会社 光検出装置、光検出システム
WO2020170841A1 (ja) 2019-02-21 2020-08-27 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサ及び測距装置
JP2021027277A (ja) 2019-08-08 2021-02-22 キヤノン株式会社 光電変換装置、光電変換システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013033864A (ja) 2011-08-02 2013-02-14 Sony Corp 固体撮像素子の製造方法、固体撮像素子、および電子機器
JP2020057651A (ja) 2018-09-28 2020-04-09 キヤノン株式会社 光検出装置、光検出システム
WO2020170841A1 (ja) 2019-02-21 2020-08-27 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサ及び測距装置
JP2021027277A (ja) 2019-08-08 2021-02-22 キヤノン株式会社 光電変換装置、光電変換システム

Also Published As

Publication number Publication date
JPWO2023132003A1 (https=) 2023-07-13
WO2023132003A1 (ja) 2023-07-13
US20240355852A1 (en) 2024-10-24

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