JPWO2023132003A1 - - Google Patents
Info
- Publication number
- JPWO2023132003A1 JPWO2023132003A1 JP2023572273A JP2023572273A JPWO2023132003A1 JP WO2023132003 A1 JPWO2023132003 A1 JP WO2023132003A1 JP 2023572273 A JP2023572273 A JP 2023572273A JP 2023572273 A JP2023572273 A JP 2023572273A JP WO2023132003 A1 JPWO2023132003 A1 JP WO2023132003A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/000071 WO2023132003A1 (ja) | 2022-01-05 | 2022-01-05 | 光電変換装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023132003A1 true JPWO2023132003A1 (https=) | 2023-07-13 |
| JPWO2023132003A5 JPWO2023132003A5 (https=) | 2024-12-26 |
| JP7806091B2 JP7806091B2 (ja) | 2026-01-26 |
Family
ID=87073557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023572273A Active JP7806091B2 (ja) | 2022-01-05 | 2022-01-05 | 光電変換装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240355852A1 (https=) |
| JP (1) | JP7806091B2 (https=) |
| WO (1) | WO2023132003A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023178686A (ja) * | 2022-06-06 | 2023-12-18 | キヤノン株式会社 | 光電変換装置、光電変換システム |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013033864A (ja) * | 2011-08-02 | 2013-02-14 | Sony Corp | 固体撮像素子の製造方法、固体撮像素子、および電子機器 |
| JP2020057651A (ja) * | 2018-09-28 | 2020-04-09 | キヤノン株式会社 | 光検出装置、光検出システム |
| WO2020170841A1 (ja) * | 2019-02-21 | 2020-08-27 | ソニーセミコンダクタソリューションズ株式会社 | アバランシェフォトダイオードセンサ及び測距装置 |
| JP2021027277A (ja) * | 2019-08-08 | 2021-02-22 | キヤノン株式会社 | 光電変換装置、光電変換システム |
-
2022
- 2022-01-05 JP JP2023572273A patent/JP7806091B2/ja active Active
- 2022-01-05 WO PCT/JP2022/000071 patent/WO2023132003A1/ja not_active Ceased
-
2024
- 2024-06-28 US US18/758,777 patent/US20240355852A1/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013033864A (ja) * | 2011-08-02 | 2013-02-14 | Sony Corp | 固体撮像素子の製造方法、固体撮像素子、および電子機器 |
| JP2020057651A (ja) * | 2018-09-28 | 2020-04-09 | キヤノン株式会社 | 光検出装置、光検出システム |
| WO2020170841A1 (ja) * | 2019-02-21 | 2020-08-27 | ソニーセミコンダクタソリューションズ株式会社 | アバランシェフォトダイオードセンサ及び測距装置 |
| JP2021027277A (ja) * | 2019-08-08 | 2021-02-22 | キヤノン株式会社 | 光電変換装置、光電変換システム |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023132003A1 (ja) | 2023-07-13 |
| JP7806091B2 (ja) | 2026-01-26 |
| US20240355852A1 (en) | 2024-10-24 |
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