JP7751916B2 - 積層構造体、電子デバイス、電子機器及びシステム - Google Patents
積層構造体、電子デバイス、電子機器及びシステムInfo
- Publication number
- JP7751916B2 JP7751916B2 JP2024544593A JP2024544593A JP7751916B2 JP 7751916 B2 JP7751916 B2 JP 7751916B2 JP 2024544593 A JP2024544593 A JP 2024544593A JP 2024544593 A JP2024544593 A JP 2024544593A JP 7751916 B2 JP7751916 B2 JP 7751916B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- crystal
- substrate
- compound
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022138854 | 2022-08-31 | ||
| JP2022138854 | 2022-08-31 | ||
| JP2022138853 | 2022-08-31 | ||
| JP2022138855 | 2022-08-31 | ||
| JP2022138853 | 2022-08-31 | ||
| JP2022138855 | 2022-08-31 | ||
| PCT/JP2023/032024 WO2024048765A1 (ja) | 2022-08-31 | 2023-08-31 | 結晶、積層構造体、素子、電子デバイス、電子機器及びシステム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024048765A1 JPWO2024048765A1 (https=) | 2024-03-07 |
| JPWO2024048765A5 JPWO2024048765A5 (https=) | 2025-04-17 |
| JP7751916B2 true JP7751916B2 (ja) | 2025-10-09 |
Family
ID=90098005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024544593A Active JP7751916B2 (ja) | 2022-08-31 | 2023-08-31 | 積層構造体、電子デバイス、電子機器及びシステム |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7751916B2 (https=) |
| WO (1) | WO2024048765A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006960A (ja) | 2003-07-24 | 2004-01-08 | Matsushita Electric Ind Co Ltd | 誘電体膜の形成方法 |
| JP2018070437A (ja) | 2016-11-04 | 2018-05-10 | 株式会社Flosfia | 結晶性ZrO2膜の製造方法および結晶性ZrO2膜 |
| JP2019216181A (ja) | 2018-06-13 | 2019-12-19 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
-
2023
- 2023-08-31 WO PCT/JP2023/032024 patent/WO2024048765A1/ja not_active Ceased
- 2023-08-31 JP JP2024544593A patent/JP7751916B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006960A (ja) | 2003-07-24 | 2004-01-08 | Matsushita Electric Ind Co Ltd | 誘電体膜の形成方法 |
| JP2018070437A (ja) | 2016-11-04 | 2018-05-10 | 株式会社Flosfia | 結晶性ZrO2膜の製造方法および結晶性ZrO2膜 |
| JP2019216181A (ja) | 2018-06-13 | 2019-12-19 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024048765A1 (ja) | 2024-03-07 |
| JPWO2024048765A1 (https=) | 2024-03-07 |
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