JP7689790B2 - 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法 - Google Patents

反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法 Download PDF

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Publication number
JP7689790B2
JP7689790B2 JP2020117891A JP2020117891A JP7689790B2 JP 7689790 B2 JP7689790 B2 JP 7689790B2 JP 2020117891 A JP2020117891 A JP 2020117891A JP 2020117891 A JP2020117891 A JP 2020117891A JP 7689790 B2 JP7689790 B2 JP 7689790B2
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Prior art keywords
refractive index
reflective film
index layer
abundant
film
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JP2020117891A
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English (en)
Japanese (ja)
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JP2021039335A (ja
JP2021039335A5 (enExample
Inventor
和宏 浜本
崇 打田
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Hoya Corp
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Hoya Corp
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Priority to JP2020117891A priority Critical patent/JP7689790B2/ja
Priority to US17/008,949 priority patent/US11500281B2/en
Publication of JP2021039335A publication Critical patent/JP2021039335A/ja
Priority to US17/958,088 priority patent/US11899356B2/en
Publication of JP2021039335A5 publication Critical patent/JP2021039335A5/ja
Priority to JP2024227680A priority patent/JP7784213B2/ja
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2020117891A 2019-09-02 2020-07-08 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法 Active JP7689790B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020117891A JP7689790B2 (ja) 2019-09-02 2020-07-08 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法
US17/008,949 US11500281B2 (en) 2019-09-02 2020-09-01 Reflective film coated substrate, mask blank, reflective mask, and semiconductor device manufacturing method
US17/958,088 US11899356B2 (en) 2019-09-02 2022-09-30 Reflective film coated substrate, mask blank, reflective mask, and semiconductor device manufacturing method
JP2024227680A JP7784213B2 (ja) 2019-09-02 2024-12-24 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019159908 2019-09-02
JP2019159908 2019-09-02
JP2020117891A JP7689790B2 (ja) 2019-09-02 2020-07-08 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Related Child Applications (1)

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JP2024227680A Division JP7784213B2 (ja) 2019-09-02 2024-12-24 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Publications (3)

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JP2021039335A JP2021039335A (ja) 2021-03-11
JP2021039335A5 JP2021039335A5 (enExample) 2023-10-06
JP7689790B2 true JP7689790B2 (ja) 2025-06-09

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JP2020117891A Active JP7689790B2 (ja) 2019-09-02 2020-07-08 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法
JP2024227680A Active JP7784213B2 (ja) 2019-09-02 2024-12-24 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法

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US (2) US11500281B2 (enExample)
JP (2) JP7689790B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11360384B2 (en) * 2018-09-28 2022-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of fabricating and servicing a photomask
DE102019124781B4 (de) 2018-09-28 2024-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Verfahren zum herstellen und behandeln einer fotomaske
JP7689790B2 (ja) * 2019-09-02 2025-06-09 Hoya株式会社 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049910A (ja) 2004-08-06 2006-02-16 Schott Ag フォトリトグラフィー処理用マスクブランクの製造方法及びマスクブランク
JP2009523311A (ja) 2006-01-12 2009-06-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP2011181810A (ja) 2010-03-03 2011-09-15 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009116348A1 (ja) 2008-03-18 2009-09-24 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP7689790B2 (ja) * 2019-09-02 2025-06-09 Hoya株式会社 反射膜付基板、マスクブランク、反射型マスク、及び半導体デバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049910A (ja) 2004-08-06 2006-02-16 Schott Ag フォトリトグラフィー処理用マスクブランクの製造方法及びマスクブランク
JP2009523311A (ja) 2006-01-12 2009-06-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP2011181810A (ja) 2010-03-03 2011-09-15 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法

Also Published As

Publication number Publication date
US11899356B2 (en) 2024-02-13
JP2021039335A (ja) 2021-03-11
JP2025032396A (ja) 2025-03-11
US11500281B2 (en) 2022-11-15
US20210063866A1 (en) 2021-03-04
US20230025358A1 (en) 2023-01-26
JP7784213B2 (ja) 2025-12-11

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