JP7635294B2 - イメージセンサ - Google Patents
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- JP7635294B2 JP7635294B2 JP2023074436A JP2023074436A JP7635294B2 JP 7635294 B2 JP7635294 B2 JP 7635294B2 JP 2023074436 A JP2023074436 A JP 2023074436A JP 2023074436 A JP2023074436 A JP 2023074436A JP 7635294 B2 JP7635294 B2 JP 7635294B2
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- 230000008033 biological extinction Effects 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 12
- 238000002955 isolation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 101100126625 Caenorhabditis elegans itr-1 gene Proteins 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
- H04N25/136—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements using complementary colours
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Optical Elements Other Than Lenses (AREA)
- Glass Compositions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
Claims (11)
- 第一のユニットを備える、イメージセンサであって、
前記第一のユニットが、
第一の寸法を有する第一のフォトダイオードと、
前記第一のフォトダイオードに隣接して配置され、前記第一の寸法よりも大きい第二の寸法を有する第二のフォトダイオードと、
前記第一のフォトダイオード及び前記第二のフォトダイオードに重なり、前記第一のフォトダイオードの上面全体及び第二のフォトダイオードの上面全体を覆う第一のカラーフィルタと、
前記第一のカラーフィルタに配置され、前記第一のフォトダイオードと重なる第一の内部リフレクタであって、前記第一の内部リフレクタは前記第一のカラーフィルタの上面から前記第二のフォトダイオードに向かって傾斜した傾斜受光面を有し、前記第一の内部リフレクタの屈折率は前記第一のカラーフィルタの屈折率よりも小さい、第一の内部リフレクタと、
を備える、イメージセンサ。 - 前記第一の内部リフレクタの屈折率と前記第一のカラーフィルタの屈折率との差が0.2より大きい、
請求項1に記載のイメージセンサ。 - 前記第一のユニットは、前記第一のカラーフィルタを取り囲むグリッドを備え、前記グリッドの高さに対する前記第一の内部リフレクタの高さの比は0.3~1であり、前記第一の内部リフレクタは第五の寸法を有し、前記第五の寸法は前記第一のフォトダイオードの前記第一の寸法より大きく、前記第一のフォトダイオードの前記第一の寸法と、前記第二のフォトダイオードの前記第二の寸法の半分との和より小さい、
請求項1に記載のイメージセンサ。 - 前記第一のユニットは、前記第一のカラーフィルタを取り囲むグリッドを備え、前記第一の内部リフレクタは、前記傾斜受光面と前記第一のフォトダイオードとの間に角度θ1を有する、
請求項1に記載のイメージセンサ。 - 前記第一の内部リフレクタは前記第二のフォトダイオードの一部と重なり、前記第一の内部リフレクタは透明な有機材料で作られ、前記第一の内部リフレクタは三角プリズムである、
請求項1に記載のイメージセンサ。 - 第二のユニットをさらに備える、請求項1に記載のイメージセンサであって、
前記第二のユニットが、
第三の寸法を有する第三のフォトダイオードと、
前記第三のフォトダイオードに隣接して配置され、前記第三の寸法よりも大きい第四の寸法を有する第四のフォトダイオードと、
前記第三のフォトダイオード及び前記第四のフォトダイオードに重なる第二のカラーフィルタと、
前記第二のカラーフィルタに配置され、前記第三のフォトダイオードと重なる第二の内部リフレクタであって、前記第二の内部リフレクタは前記第二のカラーフィルタの上面から前記第四のフォトダイオードに向かって傾斜した傾斜受光面を有し、前記第二の内部リフレクタの屈折率は前記第二のカラーフィルタの屈折率よりも小さく、前記第二の内部リフレクタの透明度は前記第一の内部リフレクタの透明度と異なる、第二の内部リフレクタと、
を備える、イメージセンサ。 - 前記第二の内部リフレクタの屈折率と前記第二のカラーフィルタの屈折率との差が0.2より大きく、前記第二のユニットは前記第二のカラーフィルタを取り囲むグリッドを備え、前記グリッドの高さに対する前記第二の内部リフレクタの高さの比は0.3~1である、
請求項7に記載のイメージセンサ。 - 前記第二の内部リフレクタは第六の寸法を有し、前記第六の寸法は前記第三のフォトダイオードの前記第三の寸法より大きく、前記第三のフォトダイオードの前記第三の寸法と、前記第四のフォトダイオードの前記第四の寸法の半分との和より小さい、
請求項7に記載のイメージセンサ。 - 前記第二のカラーフィルタは、前記第三のフォトダイオードから前記第四のフォトダイオードまで連続的に延び、前記第二の内部リフレクタの消衰係数は0.1~0.3であり、前記第二の内部リフレクタは三角プリズムであり、前記第二の内部リフレクタは前記第四のフォトダイオードの一部と重なる、
請求項7に記載のイメージセンサ。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18/169,126 US20240274634A1 (en) | 2023-02-14 | 2023-02-14 | Image sensor |
| US18/169,126 | 2023-02-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024115492A JP2024115492A (ja) | 2024-08-26 |
| JP7635294B2 true JP7635294B2 (ja) | 2025-02-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2023074436A Active JP7635294B2 (ja) | 2023-02-14 | 2023-04-28 | イメージセンサ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240274634A1 (ja) |
| JP (1) | JP7635294B2 (ja) |
| CN (1) | CN118507496A (ja) |
| TW (1) | TWI824978B (ja) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015065270A (ja) | 2013-09-25 | 2015-04-09 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| JP2017028241A (ja) | 2015-07-20 | 2017-02-02 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | イメージセンサ |
| WO2017073321A1 (ja) | 2015-10-26 | 2017-05-04 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| WO2019065143A1 (ja) | 2017-09-26 | 2019-04-04 | 富士フイルム株式会社 | 積層体、及び、固体撮像素子 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8299554B2 (en) * | 2009-08-31 | 2012-10-30 | International Business Machines Corporation | Image sensor, method and design structure including non-planar reflector |
| JP5237998B2 (ja) * | 2010-07-12 | 2013-07-17 | パナソニック株式会社 | 固体撮像素子、撮像装置および信号処理方法 |
| US8530266B1 (en) * | 2012-07-18 | 2013-09-10 | Omnivision Technologies, Inc. | Image sensor having metal grid with a triangular cross-section |
| CN104009048A (zh) * | 2013-02-26 | 2014-08-27 | 中芯国际集成电路制造(上海)有限公司 | Cmos图像传感器及其制备方法 |
| US9130077B2 (en) * | 2013-08-15 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure of dielectric grid with a metal pillar for semiconductor device |
| KR102174650B1 (ko) * | 2013-10-31 | 2020-11-05 | 삼성전자주식회사 | 이미지 센서 |
| KR102299714B1 (ko) * | 2014-08-18 | 2021-09-08 | 삼성전자주식회사 | 컬러 필터 격리층을 구비하는 이미지 센서 및 상기 이미지 센서의 제조 방법 |
| US10121809B2 (en) * | 2016-09-13 | 2018-11-06 | Omnivision Technologies, Inc. | Backside-illuminated color image sensors with crosstalk-suppressing color filter array |
| KR102571005B1 (ko) * | 2017-01-18 | 2023-08-30 | 에스케이하이닉스 주식회사 | 광 굴절 패턴들을 가진 이미지 센서 |
| JP2020136429A (ja) * | 2019-02-18 | 2020-08-31 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
-
2023
- 2023-02-14 US US18/169,126 patent/US20240274634A1/en active Pending
- 2023-04-28 JP JP2023074436A patent/JP7635294B2/ja active Active
- 2023-05-29 TW TW112119946A patent/TWI824978B/zh active
- 2023-06-27 CN CN202310762396.2A patent/CN118507496A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015065270A (ja) | 2013-09-25 | 2015-04-09 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| JP2017028241A (ja) | 2015-07-20 | 2017-02-02 | 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited | イメージセンサ |
| WO2017073321A1 (ja) | 2015-10-26 | 2017-05-04 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
| WO2019065143A1 (ja) | 2017-09-26 | 2019-04-04 | 富士フイルム株式会社 | 積層体、及び、固体撮像素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240274634A1 (en) | 2024-08-15 |
| TW202433951A (zh) | 2024-08-16 |
| TWI824978B (zh) | 2023-12-01 |
| CN118507496A (zh) | 2024-08-16 |
| JP2024115492A (ja) | 2024-08-26 |
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