JP7620571B2 - ＡｌＮ積層板 - Google Patents

ＡｌＮ積層板 Download PDF

Info

Publication number
JP7620571B2
JP7620571B2 JP2021567341A JP2021567341A JP7620571B2 JP 7620571 B2 JP7620571 B2 JP 7620571B2 JP 2021567341 A JP2021567341 A JP 2021567341A JP 2021567341 A JP2021567341 A JP 2021567341A JP 7620571 B2 JP7620571 B2 JP 7620571B2
Authority
JP
Japan
Prior art keywords
aln
metal component
layer
single crystal
containing region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021567341A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021131966A1 (https=
JPWO2021131966A5 (https=
Inventor
博久 小川
義政 小林
和希 飯田
宏之 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2021131966A1 publication Critical patent/JPWO2021131966A1/ja
Publication of JPWO2021131966A5 publication Critical patent/JPWO2021131966A5/ja
Application granted granted Critical
Publication of JP7620571B2 publication Critical patent/JP7620571B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP2021567341A 2019-12-23 2020-12-16 ＡｌＮ積層板 Active JP7620571B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019231909 2019-12-23
JP2019231909 2019-12-23
PCT/JP2020/046971 WO2021131966A1 (ja) 2019-12-23 2020-12-16 ＡｌＮ積層板

Publications (3)

Publication Number Publication Date
JPWO2021131966A1 JPWO2021131966A1 (https=) 2021-07-01
JPWO2021131966A5 JPWO2021131966A5 (https=) 2022-08-19
JP7620571B2 true JP7620571B2 (ja) 2025-01-23

Family

ID=76575910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021567341A Active JP7620571B2 (ja) 2019-12-23 2020-12-16 ＡｌＮ積層板

Country Status (2)

Country Link
JP (1) JP7620571B2 (https=)
WO (1) WO2021131966A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007506635A (ja) 2003-09-26 2007-03-22 サントル　ナショナル　ドゥ　ラ　ルシェルシュ　シアンティフィック（セーエヌエールエス） 犠牲層上のヘテロエピタキシによるｉｉｉ族窒化物の自立基板の実現方法
JP2009018975A (ja) 2007-07-13 2009-01-29 Ngk Insulators Ltd 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP2011020900A (ja) 2009-07-16 2011-02-03 Tokuyama Corp 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板
JP2015040136A (ja) 2013-08-20 2015-03-02 住友電気工業株式会社 Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007506635A (ja) 2003-09-26 2007-03-22 サントル　ナショナル　ドゥ　ラ　ルシェルシュ　シアンティフィック（セーエヌエールエス） 犠牲層上のヘテロエピタキシによるｉｉｉ族窒化物の自立基板の実現方法
JP2009018975A (ja) 2007-07-13 2009-01-29 Ngk Insulators Ltd 非極性面ｉｉｉ族窒化物単結晶の製造方法
JP2011020900A (ja) 2009-07-16 2011-02-03 Tokuyama Corp 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板
JP2015040136A (ja) 2013-08-20 2015-03-02 住友電気工業株式会社 Ｉｉｉ族窒化物膜の製造方法およびｉｉｉ族窒化物半導体デバイスの製造方法

Also Published As

Publication number Publication date
JPWO2021131966A1 (https=) 2021-07-01
WO2021131966A1 (ja) 2021-07-01

Similar Documents

Publication Publication Date Title
CN102770940B (zh) 带多层膜的单晶衬底、带多层膜的单晶衬底的制造方法以及元件制造方法
CN102792420B (zh) 单晶衬底、单晶衬底的制造方法、带多层膜的单晶衬底的制造方法以及元件制造方法
JP7262027B2 (ja) Ｉｉｉ族窒化物半導体の製造方法
JP6425835B2 (ja) ダイヤモンド−半導体複合基板を製造する方法
CN102753737B (zh) 外延生长用内部改性衬底、带多层膜的内部改性衬底、半导体器件、半导体块状衬底以及它们的制造方法
WO2014057748A1 (ja) Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法
JP2012142385A (ja) 半導体デバイスの製造方法
TWI287880B (en) Group III nitride semiconductor light-emitting device and method of producing the same
WO2014002576A1 (ja) 半導体装置の製造方法
KR20250113960A (ko) SiC 에피택셜 웨이퍼
JP7620571B2 (ja) ＡｌＮ積層板
JP7620570B2 (ja) ＡｌＮ単結晶板
WO2010082396A1 (ja) 発光素子用基板
JP5646545B2 (ja) 半導体発光素子及びその製造方法
JP7700051B2 (ja) ＡｌＮ積層板
WO2021215466A1 (ja) 接合基板
WO2011162236A1 (ja) 基板、基板の製造方法および発光素子
WO2024058180A1 (ja) 半導体装置形成用基板、半導体積層構造体、半導体装置、半導体装置形成用基板の製造方法、半導体積層構造体の製造方法及び半導体装置の製造方法
KR102834709B1 (ko) SiC 에피택셜 웨이퍼
JP2012129438A (ja) 半導体デバイスの製造方法、エピ成長用積層支持基板およびデバイス用積層支持基板
JP7182105B2 (ja) Ｉｉｉ族窒化物半導体デバイスの製造方法
JP6755230B2 (ja) 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP2025155678A (ja) 複合基板
JP5951732B2 (ja) 半導体発光素子
JP2014011280A (ja) 半導体ウェーハのダイシング方法及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240730

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240926

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250110

R150 Certificate of patent or registration of utility model

Ref document number: 7620571

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150