JPWO2021131966A1 - - Google Patents

Info

Publication number
JPWO2021131966A1
JPWO2021131966A1 JP2021567341A JP2021567341A JPWO2021131966A1 JP WO2021131966 A1 JPWO2021131966 A1 JP WO2021131966A1 JP 2021567341 A JP2021567341 A JP 2021567341A JP 2021567341 A JP2021567341 A JP 2021567341A JP WO2021131966 A1 JPWO2021131966 A1 JP WO2021131966A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021567341A
Other languages
Japanese (ja)
Other versions
JPWO2021131966A5 (https=
JP7620571B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021131966A1 publication Critical patent/JPWO2021131966A1/ja
Publication of JPWO2021131966A5 publication Critical patent/JPWO2021131966A5/ja
Application granted granted Critical
Publication of JP7620571B2 publication Critical patent/JP7620571B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/38Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP2021567341A 2019-12-23 2020-12-16 AlN積層板 Active JP7620571B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019231909 2019-12-23
JP2019231909 2019-12-23
PCT/JP2020/046971 WO2021131966A1 (ja) 2019-12-23 2020-12-16 AlN積層板

Publications (3)

Publication Number Publication Date
JPWO2021131966A1 true JPWO2021131966A1 (https=) 2021-07-01
JPWO2021131966A5 JPWO2021131966A5 (https=) 2022-08-19
JP7620571B2 JP7620571B2 (ja) 2025-01-23

Family

ID=76575910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021567341A Active JP7620571B2 (ja) 2019-12-23 2020-12-16 AlN積層板

Country Status (2)

Country Link
JP (1) JP7620571B2 (https=)
WO (1) WO2021131966A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007506635A (ja) * 2003-09-26 2007-03-22 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック(セーエヌエールエス) 犠牲層上のヘテロエピタキシによるiii族窒化物の自立基板の実現方法
JP2009018975A (ja) * 2007-07-13 2009-01-29 Ngk Insulators Ltd 非極性面iii族窒化物単結晶の製造方法
JP2011020900A (ja) * 2009-07-16 2011-02-03 Tokuyama Corp 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板
JP2015040136A (ja) * 2013-08-20 2015-03-02 住友電気工業株式会社 Iii族窒化物膜の製造方法およびiii族窒化物半導体デバイスの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007506635A (ja) * 2003-09-26 2007-03-22 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック(セーエヌエールエス) 犠牲層上のヘテロエピタキシによるiii族窒化物の自立基板の実現方法
JP2009018975A (ja) * 2007-07-13 2009-01-29 Ngk Insulators Ltd 非極性面iii族窒化物単結晶の製造方法
JP2011020900A (ja) * 2009-07-16 2011-02-03 Tokuyama Corp 窒化アルミニウム単結晶層を有する積層体の製造方法、該製法で製造される積層体、該積層体を用いた窒化アルミニウム単結晶基板の製造方法、および、窒化アルミニウム単結晶基板
JP2015040136A (ja) * 2013-08-20 2015-03-02 住友電気工業株式会社 Iii族窒化物膜の製造方法およびiii族窒化物半導体デバイスの製造方法

Also Published As

Publication number Publication date
WO2021131966A1 (ja) 2021-07-01
JP7620571B2 (ja) 2025-01-23

Similar Documents

Publication Publication Date Title
BR112019017762A2 (https=)
BR112021017339A2 (https=)
BR112021018450A2 (https=)
BR112021017637A2 (https=)
BR112021017892A2 (https=)
BR112021017782A2 (https=)
BR112021016821A2 (https=)
BR112021017939A2 (https=)
BR112021017738A2 (https=)
BR112021016996A2 (https=)
BR112021008711A2 (https=)
BR112019016141A2 (https=)
BR112021017728A2 (https=)
BR112021013944A2 (https=)
BR112021018452A2 (https=)
BR112021017703A2 (https=)
BR112021018102A2 (https=)
BR112019016142A2 (https=)
BR112019016138A2 (https=)
BR112021017732A2 (https=)
BR112021017234A2 (https=)
BR112021017355A2 (https=)
BR112021018168A2 (https=)
BR112021018093A2 (https=)
BR112021017173A2 (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240730

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240926

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250110

R150 Certificate of patent or registration of utility model

Ref document number: 7620571

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150