JP7579270B2 - イオン源および中性子発生装置 - Google Patents

イオン源および中性子発生装置 Download PDF

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JP7579270B2
JP7579270B2 JP2021562130A JP2021562130A JP7579270B2 JP 7579270 B2 JP7579270 B2 JP 7579270B2 JP 2021562130 A JP2021562130 A JP 2021562130A JP 2021562130 A JP2021562130 A JP 2021562130A JP 7579270 B2 JP7579270 B2 JP 7579270B2
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chamber
filament
grid
positive voltage
target
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Japanese (ja)
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JP2022529986A (ja
JP2022529986A5 (https=
JPWO2020214197A5 (https=
Inventor
グレゴリー ピーファー
リチャード シソン
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シャイン テクノロジーズ リミテッド ライアビリティ カンパニー
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Publication of JP2022529986A5 publication Critical patent/JP2022529986A5/ja
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Priority to JP2024188189A priority Critical patent/JP7756223B2/ja
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Priority to JP2025167902A priority patent/JP2025188116A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/22—Means for obtaining or maintaining the desired pressure within the tube
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21B—FUSION REACTORS
    • G21B3/00—Low temperature nuclear fusion reactors, e.g. alleged cold fusion reactors
    • G21B3/006—Fusion by impact, e.g. cluster/beam interaction, ion beam collisions, impact on a target
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21G—CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURCES
    • G21G4/00—Radioactive sources
    • G21G4/02—Neutron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/06—Generating neutron beams
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/08—Arrangements for injecting particles into orbits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/08—Arrangements for injecting particles into orbits
    • H05H2007/081—Sources
    • H05H2007/082—Ion sources, e.g. ECR, duoplasmatron, PIG, laser sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
JP2021562130A 2019-04-19 2019-09-06 イオン源および中性子発生装置 Active JP7579270B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024188189A JP7756223B2 (ja) 2019-04-19 2024-10-25 イオン源および中性子発生装置
JP2025167902A JP2025188116A (ja) 2019-04-19 2025-10-06 イオン源および中性子発生装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962836481P 2019-04-19 2019-04-19
US62/836,481 2019-04-19
PCT/US2019/050060 WO2020214197A1 (en) 2019-04-19 2019-09-06 Ion source and neutron generator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024188189A Division JP7756223B2 (ja) 2019-04-19 2024-10-25 イオン源および中性子発生装置

Publications (4)

Publication Number Publication Date
JP2022529986A JP2022529986A (ja) 2022-06-27
JP2022529986A5 JP2022529986A5 (https=) 2024-01-24
JPWO2020214197A5 JPWO2020214197A5 (https=) 2024-01-24
JP7579270B2 true JP7579270B2 (ja) 2024-11-07

Family

ID=72836988

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021562130A Active JP7579270B2 (ja) 2019-04-19 2019-09-06 イオン源および中性子発生装置
JP2024188189A Active JP7756223B2 (ja) 2019-04-19 2024-10-25 イオン源および中性子発生装置
JP2025167902A Pending JP2025188116A (ja) 2019-04-19 2025-10-06 イオン源および中性子発生装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024188189A Active JP7756223B2 (ja) 2019-04-19 2024-10-25 イオン源および中性子発生装置
JP2025167902A Pending JP2025188116A (ja) 2019-04-19 2025-10-06 イオン源および中性子発生装置

Country Status (8)

Country Link
US (2) US12342447B2 (https=)
EP (1) EP3956918A4 (https=)
JP (3) JP7579270B2 (https=)
KR (2) KR102784434B1 (https=)
CN (2) CN120126983A (https=)
AU (2) AU2019441368B2 (https=)
CA (1) CA3137275A1 (https=)
WO (1) WO2020214197A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4260360A4 (en) * 2020-12-08 2024-05-22 SHINE Technologies, LLC ISOTHERMAL ION SOURCE WITH AUXILIARY HEATING ELEMENTS
CN117836899A (zh) * 2021-08-13 2024-04-05 阳光技术有限责任公司 用于如离子和同位素生产等高真空应用的磁旋转装置
KR20240090158A (ko) 2021-10-01 2024-06-21 샤인 테크놀로지스 엘엘씨 이온 수집을 위한 섬유질 격자를 갖는 이온 생성 시스템
CN117042276A (zh) * 2023-07-26 2023-11-10 中国工程物理研究院流体物理研究所 一种高引出效率的离子源结构及密封中子管结构

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2689918A (en) 1952-04-26 1954-09-21 Well Surveys Inc Static atmosphere ion accelerator for well logging
GB778656A (en) 1954-03-08 1957-07-10 Schlumberger Well Surv Corp Neutron well logging apparatus
US3084256A (en) 1957-09-03 1963-04-02 Lab For Electronics Inc Neutron generator
US3588593A (en) * 1969-03-27 1971-06-28 Atomic Energy Commission Method of operating an ion-getter vacuum pump with gun and grid structure arranged for optimum ionization and sublimation
US3761708A (en) 1971-10-08 1973-09-25 Us Interior Electron suppressor grid for a mass spectrometer
US4155825A (en) 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
US4267007A (en) 1979-03-19 1981-05-12 Kellogg Charles W Winding apparatus for the manufacture of filament-wound, reinforced resinous products
JPS6252843A (ja) * 1985-08-30 1987-03-07 Hitachi Ltd イオン流調整装置
JPH02204941A (ja) * 1989-02-03 1990-08-14 Japan Steel Works Ltd:The イオン発生装置
US5262652A (en) 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
JP3239427B2 (ja) * 1992-03-27 2001-12-17 株式会社島津製作所 イオン散乱分光装置
US5856674A (en) 1997-09-16 1999-01-05 Eaton Corporation Filament for ion implanter plasma shower
US6551471B1 (en) 1999-11-30 2003-04-22 Canon Kabushiki Kaisha Ionization film-forming method and apparatus
US6907097B2 (en) 2001-03-16 2005-06-14 The Regents Of The University Of California Cylindrical neutron generator
GB2386747A (en) 2001-11-08 2003-09-24 Ionoptika Ltd Fullerene ion gun
JP4078084B2 (ja) * 2002-01-28 2008-04-23 キヤノン株式会社 イオン化成膜方法及び装置
JP2004362901A (ja) * 2003-06-04 2004-12-24 Sharp Corp イオンドーピング装置、イオンドーピング方法および半導体装置
JP2006266854A (ja) 2005-03-23 2006-10-05 Shinku Jikkenshitsu:Kk 全圧測定電極付き四重極質量分析計及びこれを用いる真空装置
JP2008152941A (ja) 2006-12-14 2008-07-03 Jeol Ltd イオン発生装置

Also Published As

Publication number Publication date
US12342447B2 (en) 2025-06-24
US20220232692A1 (en) 2022-07-21
CN113841216A (zh) 2021-12-24
JP7756223B2 (ja) 2025-10-17
AU2025271362A1 (en) 2025-12-18
JP2022529986A (ja) 2022-06-27
KR20250046332A (ko) 2025-04-02
EP3956918A1 (en) 2022-02-23
JP2025188116A (ja) 2025-12-25
CN113841216B (zh) 2025-03-25
CA3137275A1 (en) 2020-10-22
EP3956918A4 (en) 2023-01-18
KR102784434B1 (ko) 2025-03-21
JP2025013980A (ja) 2025-01-28
US20250294664A1 (en) 2025-09-18
KR20210153668A (ko) 2021-12-17
CN120126983A (zh) 2025-06-10
WO2020214197A1 (en) 2020-10-22
AU2019441368A1 (en) 2021-12-02
AU2019441368B2 (en) 2025-09-25

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