CN120126983A - 离子源和中子发生器 - Google Patents

离子源和中子发生器 Download PDF

Info

Publication number
CN120126983A
CN120126983A CN202510276823.5A CN202510276823A CN120126983A CN 120126983 A CN120126983 A CN 120126983A CN 202510276823 A CN202510276823 A CN 202510276823A CN 120126983 A CN120126983 A CN 120126983A
Authority
CN
China
Prior art keywords
chamber
filament
positive voltage
gate
acceleration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202510276823.5A
Other languages
English (en)
Chinese (zh)
Inventor
G·皮弗
R·西森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sunshine Technology Co ltd
Original Assignee
Sunshine Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunshine Technology Co ltd filed Critical Sunshine Technology Co ltd
Publication of CN120126983A publication Critical patent/CN120126983A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/02—Details
    • H01J17/22—Means for obtaining or maintaining the desired pressure within the tube
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21B—FUSION REACTORS
    • G21B3/00—Low temperature nuclear fusion reactors, e.g. alleged cold fusion reactors
    • G21B3/006—Fusion by impact, e.g. cluster/beam interaction, ion beam collisions, impact on a target
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21G—CONVERSION OF CHEMICAL ELEMENTS; RADIOACTIVE SOURCES
    • G21G4/00—Radioactive sources
    • G21G4/02—Neutron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
    • H05H3/06—Generating neutron beams
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/08—Arrangements for injecting particles into orbits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/08—Arrangements for injecting particles into orbits
    • H05H2007/081—Sources
    • H05H2007/082—Ion sources, e.g. ECR, duoplasmatron, PIG, laser sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Particle Accelerators (AREA)
CN202510276823.5A 2019-04-19 2019-09-06 离子源和中子发生器 Pending CN120126983A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962836481P 2019-04-19 2019-04-19
US62/836,481 2019-04-19
PCT/US2019/050060 WO2020214197A1 (en) 2019-04-19 2019-09-06 Ion source and neutron generator
CN201980096485.XA CN113841216B (zh) 2019-04-19 2019-09-06 离子源和中子发生器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980096485.XA Division CN113841216B (zh) 2019-04-19 2019-09-06 离子源和中子发生器

Publications (1)

Publication Number Publication Date
CN120126983A true CN120126983A (zh) 2025-06-10

Family

ID=72836988

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202510276823.5A Pending CN120126983A (zh) 2019-04-19 2019-09-06 离子源和中子发生器
CN201980096485.XA Active CN113841216B (zh) 2019-04-19 2019-09-06 离子源和中子发生器

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201980096485.XA Active CN113841216B (zh) 2019-04-19 2019-09-06 离子源和中子发生器

Country Status (8)

Country Link
US (2) US12342447B2 (https=)
EP (1) EP3956918A4 (https=)
JP (3) JP7579270B2 (https=)
KR (2) KR102784434B1 (https=)
CN (2) CN120126983A (https=)
AU (2) AU2019441368B2 (https=)
CA (1) CA3137275A1 (https=)
WO (1) WO2020214197A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4260360A4 (en) * 2020-12-08 2024-05-22 SHINE Technologies, LLC ISOTHERMAL ION SOURCE WITH AUXILIARY HEATING ELEMENTS
CN117836899A (zh) * 2021-08-13 2024-04-05 阳光技术有限责任公司 用于如离子和同位素生产等高真空应用的磁旋转装置
KR20240090158A (ko) 2021-10-01 2024-06-21 샤인 테크놀로지스 엘엘씨 이온 수집을 위한 섬유질 격자를 갖는 이온 생성 시스템
CN117042276A (zh) * 2023-07-26 2023-11-10 中国工程物理研究院流体物理研究所 一种高引出效率的离子源结构及密封中子管结构

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2689918A (en) 1952-04-26 1954-09-21 Well Surveys Inc Static atmosphere ion accelerator for well logging
GB778656A (en) 1954-03-08 1957-07-10 Schlumberger Well Surv Corp Neutron well logging apparatus
US3084256A (en) 1957-09-03 1963-04-02 Lab For Electronics Inc Neutron generator
US3588593A (en) * 1969-03-27 1971-06-28 Atomic Energy Commission Method of operating an ion-getter vacuum pump with gun and grid structure arranged for optimum ionization and sublimation
US3761708A (en) 1971-10-08 1973-09-25 Us Interior Electron suppressor grid for a mass spectrometer
US4155825A (en) 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
US4267007A (en) 1979-03-19 1981-05-12 Kellogg Charles W Winding apparatus for the manufacture of filament-wound, reinforced resinous products
JPS6252843A (ja) * 1985-08-30 1987-03-07 Hitachi Ltd イオン流調整装置
JPH02204941A (ja) * 1989-02-03 1990-08-14 Japan Steel Works Ltd:The イオン発生装置
US5262652A (en) 1991-05-14 1993-11-16 Applied Materials, Inc. Ion implantation apparatus having increased source lifetime
JP3239427B2 (ja) * 1992-03-27 2001-12-17 株式会社島津製作所 イオン散乱分光装置
US5856674A (en) 1997-09-16 1999-01-05 Eaton Corporation Filament for ion implanter plasma shower
US6551471B1 (en) 1999-11-30 2003-04-22 Canon Kabushiki Kaisha Ionization film-forming method and apparatus
US6907097B2 (en) 2001-03-16 2005-06-14 The Regents Of The University Of California Cylindrical neutron generator
GB2386747A (en) 2001-11-08 2003-09-24 Ionoptika Ltd Fullerene ion gun
JP4078084B2 (ja) * 2002-01-28 2008-04-23 キヤノン株式会社 イオン化成膜方法及び装置
JP2004362901A (ja) * 2003-06-04 2004-12-24 Sharp Corp イオンドーピング装置、イオンドーピング方法および半導体装置
JP2006266854A (ja) 2005-03-23 2006-10-05 Shinku Jikkenshitsu:Kk 全圧測定電極付き四重極質量分析計及びこれを用いる真空装置
JP2008152941A (ja) 2006-12-14 2008-07-03 Jeol Ltd イオン発生装置

Also Published As

Publication number Publication date
US12342447B2 (en) 2025-06-24
US20220232692A1 (en) 2022-07-21
CN113841216A (zh) 2021-12-24
JP7756223B2 (ja) 2025-10-17
JP7579270B2 (ja) 2024-11-07
AU2025271362A1 (en) 2025-12-18
JP2022529986A (ja) 2022-06-27
KR20250046332A (ko) 2025-04-02
EP3956918A1 (en) 2022-02-23
JP2025188116A (ja) 2025-12-25
CN113841216B (zh) 2025-03-25
CA3137275A1 (en) 2020-10-22
EP3956918A4 (en) 2023-01-18
KR102784434B1 (ko) 2025-03-21
JP2025013980A (ja) 2025-01-28
US20250294664A1 (en) 2025-09-18
KR20210153668A (ko) 2021-12-17
WO2020214197A1 (en) 2020-10-22
AU2019441368A1 (en) 2021-12-02
AU2019441368B2 (en) 2025-09-25

Similar Documents

Publication Publication Date Title
JP7756223B2 (ja) イオン源および中性子発生装置
Bacal et al. Negative hydrogen ion production mechanisms
KR101194652B1 (ko) 고전류 디시 양성자 가속기
Dudnikov Development and applications of negative ion sources
JP6216380B2 (ja) 陰イオンに基づく中性ビーム入射器
JP6415388B2 (ja) プラズマ生成装置
JPH06342699A (ja) 高中性子束発生管
Faircloth Ion sources for high-power hadron accelerators
Dudnikov Methods of negative ion production
JPH02148700A (ja) 高中性子束中性子管のイオン引き出し兼加速装置
US5675606A (en) Solenoid and monocusp ion source
Dudnikov Surface-plasma method for the production of negative ion beams
Scrivens Classification of ion sources
Faircloth Negative ion sources: Magnetron and penning
Hamilton et al. Physics and applications of charged particle beam sources
JPWO2020214197A5 (https=)
KR101305588B1 (ko) 중성자 발생원
Angert Ion sources
Dudnikov Surface Plasma Negative Ion Sources
Thuillier CERN: II. 10-Particle sources
Kuroda Development of high current negative ion source
Skalyga et al. SMIS 37 Upgrade—High-Current Electron Cyclotron Resonance Ion Source with Gyrotron Plasma Heating
Hahto Development of negative ion sources for accelerator, fusion and semiconductor manufacturing applications
Thuillier Particle sources
Farrell et al. Optimization of surface plasma sources for efficient production of negative ions with high emission current density

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination