JP7578594B2 - 半導体装置、蓄電装置および半導体装置の動作方法 - Google Patents

半導体装置、蓄電装置および半導体装置の動作方法 Download PDF

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Publication number
JP7578594B2
JP7578594B2 JP2021530328A JP2021530328A JP7578594B2 JP 7578594 B2 JP7578594 B2 JP 7578594B2 JP 2021530328 A JP2021530328 A JP 2021530328A JP 2021530328 A JP2021530328 A JP 2021530328A JP 7578594 B2 JP7578594 B2 JP 7578594B2
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Prior art keywords
transistor
oxide
conductor
drain
insulator
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Japanese (ja)
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JPWO2021005439A1 (https=
JPWO2021005439A5 (https=
Inventor
広樹 井上
宏輔 佐々木
裕人 八窪
圭 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2024187204A priority Critical patent/JP7784505B2/ja
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Priority to JP2025211537A priority patent/JP2026035758A/ja
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/18—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Networks Using Active Elements (AREA)
JP2021530328A 2019-07-05 2020-06-24 半導体装置、蓄電装置および半導体装置の動作方法 Active JP7578594B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024187204A JP7784505B2 (ja) 2019-07-05 2024-10-24 蓄電装置
JP2025211537A JP2026035758A (ja) 2019-07-05 2025-12-01 蓄電装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019125872 2019-07-05
JP2019125872 2019-07-05
PCT/IB2020/055940 WO2021005439A1 (ja) 2019-07-05 2020-06-24 半導体装置、蓄電装置および半導体装置の動作方法

Related Child Applications (1)

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JP2024187204A Division JP7784505B2 (ja) 2019-07-05 2024-10-24 蓄電装置

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JPWO2021005439A1 JPWO2021005439A1 (https=) 2021-01-14
JPWO2021005439A5 JPWO2021005439A5 (https=) 2023-06-13
JP7578594B2 true JP7578594B2 (ja) 2024-11-06

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JP2021530328A Active JP7578594B2 (ja) 2019-07-05 2020-06-24 半導体装置、蓄電装置および半導体装置の動作方法
JP2024187204A Active JP7784505B2 (ja) 2019-07-05 2024-10-24 蓄電装置
JP2025211537A Pending JP2026035758A (ja) 2019-07-05 2025-12-01 蓄電装置

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JP2024187204A Active JP7784505B2 (ja) 2019-07-05 2024-10-24 蓄電装置
JP2025211537A Pending JP2026035758A (ja) 2019-07-05 2025-12-01 蓄電装置

Country Status (4)

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US (2) US12176810B2 (https=)
JP (3) JP7578594B2 (https=)
CN (1) CN114026787A (https=)
WO (1) WO2021005439A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7359754B2 (ja) * 2018-04-20 2023-10-11 株式会社半導体エネルギー研究所 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006012199A (ja) 2004-06-21 2006-01-12 Yuki Nagaoka レーザー駆動装置、光学式ヘッド、および光ディスクドライブ装置
JP2008103888A (ja) 2006-10-18 2008-05-01 Niigata Seimitsu Kk 電圧制御発振回路
JP2010103888A (ja) 2008-10-27 2010-05-06 Sony Corp 撮像装置、撮像動作処理方法
JP2015047061A (ja) 2013-07-31 2015-03-12 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0445974A (ja) 1990-06-14 1992-02-14 Matsushita Electric Ind Co Ltd 電子タイプライター
JP2503526Y2 (ja) * 1990-08-23 1996-07-03 株式会社ニコン 電池の異常検出回路
JP4713939B2 (ja) 2005-05-19 2011-06-29 ルネサスエレクトロニクス株式会社 電圧制御発振器及びそれを用いた無線通信機
JP2010057068A (ja) 2008-08-29 2010-03-11 Kyocera Kinseki Corp 発振器
TWI606688B (zh) * 2017-01-20 2017-11-21 Voltage controlled oscillation circuit
JP7564092B2 (ja) * 2019-03-29 2024-10-08 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006012199A (ja) 2004-06-21 2006-01-12 Yuki Nagaoka レーザー駆動装置、光学式ヘッド、および光ディスクドライブ装置
JP2008103888A (ja) 2006-10-18 2008-05-01 Niigata Seimitsu Kk 電圧制御発振回路
JP2010103888A (ja) 2008-10-27 2010-05-06 Sony Corp 撮像装置、撮像動作処理方法
JP2015047061A (ja) 2013-07-31 2015-03-12 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、及び半導体装置

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Publication number Publication date
JPWO2021005439A1 (https=) 2021-01-14
US20250141355A1 (en) 2025-05-01
JP2025013366A (ja) 2025-01-24
CN114026787A (zh) 2022-02-08
US20220321006A1 (en) 2022-10-06
JP2026035758A (ja) 2026-03-04
US12176810B2 (en) 2024-12-24
WO2021005439A1 (ja) 2021-01-14
JP7784505B2 (ja) 2025-12-11

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