JP7563702B2 - 誘電体層の酸化膜換算膜厚の取得方法 - Google Patents

誘電体層の酸化膜換算膜厚の取得方法 Download PDF

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Publication number
JP7563702B2
JP7563702B2 JP2023050993A JP2023050993A JP7563702B2 JP 7563702 B2 JP7563702 B2 JP 7563702B2 JP 2023050993 A JP2023050993 A JP 2023050993A JP 2023050993 A JP2023050993 A JP 2023050993A JP 7563702 B2 JP7563702 B2 JP 7563702B2
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impedance
layer
silicon dioxide
dioxide layer
semiconductor capacitor
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Japanese (ja)
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JP2024061586A (ja
Inventor
茂男 張
紀綸 柳
學良 周
宜珊 ▲呉▼
喬蓉 林
聿▲勲▼ 薛
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汎銓科技股▲分▼有限公司
國立中興大學
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/08—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means
    • G01B7/085—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means for measuring thickness of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/46—SCM [Scanning Capacitance Microscopy] or apparatus therefor, e.g. SCM probes
    • H10P74/23—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • G01R31/2639—Circuits therefor for testing other individual devices for testing field-effect devices, e.g. of MOS-capacitors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2023050993A 2022-10-20 2023-03-28 誘電体層の酸化膜換算膜厚の取得方法 Active JP7563702B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW111139739A TWI832501B (zh) 2022-10-20 2022-10-20 介電層之等效氧化層厚度取得方法
TW111139739 2022-10-20

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JP2024061586A JP2024061586A (ja) 2024-05-07
JP7563702B2 true JP7563702B2 (ja) 2024-10-08

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JP2023050993A Active JP7563702B2 (ja) 2022-10-20 2023-03-28 誘電体層の酸化膜換算膜厚の取得方法

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US (1) US20240230710A9 (de)
EP (1) EP4357791B1 (de)
JP (1) JP7563702B2 (de)
KR (1) KR102767005B1 (de)
TW (1) TWI832501B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7717897B1 (ja) * 2024-05-08 2025-08-04 汎銓科技股▲分▼有限公司 誘電体シートの誘電率取得方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US222524A (en) * 1879-12-09 Improvement in machines for manufacturing rubber belting
US4747698A (en) * 1986-04-30 1988-05-31 International Business Machines Corp. Scanning thermal profiler
TWI222524B (en) * 2002-10-14 2004-10-21 Taiwan Semiconductor Mfg Capacitance-voltage measurement method of transistor and device thereof
US7103484B1 (en) 2003-10-31 2006-09-05 Kla-Tencor Technologies Corp. Non-contact methods for measuring electrical thickness and determining nitrogen content of insulating films
US7282941B2 (en) * 2005-04-05 2007-10-16 Solid State Measurements, Inc. Method of measuring semiconductor wafers with an oxide enhanced probe
KR101051017B1 (ko) * 2009-10-30 2011-07-26 숭실대학교산학협력단 슈퍼 커패시터 성능 평가 방법 및 슈퍼 커패시터 성능 평가를 위한 파라미터 측정 장치.
US9442078B2 (en) * 2014-02-28 2016-09-13 Mark J. Hagmann Scanning frequency comb microscopy (SFCM) for carrier profiling in semiconductors

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Publication number Publication date
KR20240055620A (ko) 2024-04-29
TWI832501B (zh) 2024-02-11
EP4357791B1 (de) 2025-12-10
EP4357791A1 (de) 2024-04-24
TW202417862A (zh) 2024-05-01
JP2024061586A (ja) 2024-05-07
KR102767005B1 (ko) 2025-02-14
US20240133918A1 (en) 2024-04-25
EP4357791C0 (de) 2025-12-10
US20240230710A9 (en) 2024-07-11

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