JP7546561B2 - 整合回路、半導体装置 - Google Patents

整合回路、半導体装置 Download PDF

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Publication number
JP7546561B2
JP7546561B2 JP2021524492A JP2021524492A JP7546561B2 JP 7546561 B2 JP7546561 B2 JP 7546561B2 JP 2021524492 A JP2021524492 A JP 2021524492A JP 2021524492 A JP2021524492 A JP 2021524492A JP 7546561 B2 JP7546561 B2 JP 7546561B2
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Prior art keywords
oxide
insulator
conductor
transistor
region
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JP2021524492A
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Japanese (ja)
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JPWO2020245696A1 (https=
JPWO2020245696A5 (ja
Inventor
寛司 國武
和晃 大嶋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/28—Impedance matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/46—One-port networks
    • H03H11/48—One-port networks simulating reactances
    • H03H11/481—Simulating capacitances

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Networks Using Active Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021524492A 2019-06-04 2020-05-25 整合回路、半導体装置 Active JP7546561B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024145697A JP7725677B2 (ja) 2019-06-04 2024-08-27 整合回路及び半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019104235 2019-06-04
JP2019104235 2019-06-04
PCT/IB2020/054927 WO2020245696A1 (ja) 2019-06-04 2020-05-25 整合回路、半導体装置、および、電子機器

Related Child Applications (1)

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JP2024145697A Division JP7725677B2 (ja) 2019-06-04 2024-08-27 整合回路及び半導体装置

Publications (3)

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JPWO2020245696A1 JPWO2020245696A1 (https=) 2020-12-10
JPWO2020245696A5 JPWO2020245696A5 (ja) 2023-05-15
JP7546561B2 true JP7546561B2 (ja) 2024-09-06

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JP2021524492A Active JP7546561B2 (ja) 2019-06-04 2020-05-25 整合回路、半導体装置
JP2024145697A Active JP7725677B2 (ja) 2019-06-04 2024-08-27 整合回路及び半導体装置

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JP2024145697A Active JP7725677B2 (ja) 2019-06-04 2024-08-27 整合回路及び半導体装置

Country Status (3)

Country Link
US (1) US12087863B2 (https=)
JP (2) JP7546561B2 (https=)
WO (1) WO2020245696A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218989A (ja) 2007-02-09 2008-09-18 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011139049A (ja) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013502189A (ja) 2009-08-14 2013-01-17 クゥアルコム・インコーポレイテッド 線形性を改善するために可変マッチング回路を有する増幅器
JP2015508621A (ja) 2012-01-23 2015-03-19 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 電力増幅器のためのチューナブル・ノッチフィルタを備えたインピーダンス整合回路
WO2015097804A1 (ja) 2013-12-26 2015-07-02 三菱電機エンジニアリング株式会社 高周波電源用自動整合回路
WO2017002196A1 (ja) 2015-06-30 2017-01-05 株式会社日立国際電気 整合器及び整合方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006031777A2 (en) 2004-09-10 2006-03-23 University Of Florida Research Foundation, Inc. Capacitive circuit element and method of using the same
KR101911367B1 (ko) 2010-09-27 2018-10-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기준 전류 생성 회로, 기준 전압 생성 회로, 및 온도 검출 회로
TWI552150B (zh) 2011-05-18 2016-10-01 半導體能源研究所股份有限公司 半導體儲存裝置
JP2014199899A (ja) 2012-08-10 2014-10-23 株式会社半導体エネルギー研究所 半導体装置
KR20150104518A (ko) 2014-03-05 2015-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레벨 시프터 회로
JP6381004B2 (ja) 2014-03-27 2018-08-29 インテル・コーポレーション マルチデバイスのフレキシブルエレクトロニクスシステムオンチップ（ｓｏｃ）のプロセス統合
US9589916B2 (en) * 2015-02-10 2017-03-07 Infineon Technologies Ag Inductively coupled transformer with tunable impedance match network
WO2016151340A1 (en) * 2015-03-25 2016-09-29 Smart Antenna Technologies Ltd Linearized negative impedance converter matching circuits and impedance adjustment circuit for a negative impedance converter
JP6850096B2 (ja) * 2015-09-24 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法及び電子機器の作製方法
US10218332B2 (en) * 2015-10-30 2019-02-26 Avago Technologies International Sales Pte. Limited Broadband matching circuit for capacitive device
JP2019057837A (ja) 2017-09-21 2019-04-11 株式会社村田製作所 電力増幅回路

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218989A (ja) 2007-02-09 2008-09-18 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013502189A (ja) 2009-08-14 2013-01-17 クゥアルコム・インコーポレイテッド 線形性を改善するために可変マッチング回路を有する増幅器
JP2011139049A (ja) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015508621A (ja) 2012-01-23 2015-03-19 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 電力増幅器のためのチューナブル・ノッチフィルタを備えたインピーダンス整合回路
WO2015097804A1 (ja) 2013-12-26 2015-07-02 三菱電機エンジニアリング株式会社 高周波電源用自動整合回路
WO2017002196A1 (ja) 2015-06-30 2017-01-05 株式会社日立国際電気 整合器及び整合方法

Also Published As

Publication number Publication date
JPWO2020245696A1 (https=) 2020-12-10
JP2024161134A (ja) 2024-11-15
US20220320330A1 (en) 2022-10-06
JP7725677B2 (ja) 2025-08-19
WO2020245696A1 (ja) 2020-12-10
US12087863B2 (en) 2024-09-10

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