JP7491778B2 - 走査型縮小投影光学系及びこれを用いたレーザ加工装置 - Google Patents

走査型縮小投影光学系及びこれを用いたレーザ加工装置 Download PDF

Info

Publication number
JP7491778B2
JP7491778B2 JP2020144610A JP2020144610A JP7491778B2 JP 7491778 B2 JP7491778 B2 JP 7491778B2 JP 2020144610 A JP2020144610 A JP 2020144610A JP 2020144610 A JP2020144610 A JP 2020144610A JP 7491778 B2 JP7491778 B2 JP 7491778B2
Authority
JP
Japan
Prior art keywords
substrate
donor
irradiation
area
donor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020144610A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021151666A5 (https=
JP2021151666A (ja
Inventor
裕 山岡
悟基 仲田
健人 宇佐美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of JP2021151666A publication Critical patent/JP2021151666A/ja
Publication of JP2021151666A5 publication Critical patent/JP2021151666A5/ja
Priority to JP2024079885A priority Critical patent/JP7815324B2/ja
Application granted granted Critical
Publication of JP7491778B2 publication Critical patent/JP7491778B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Laser Beam Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Led Device Packages (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Microscoopes, Condenser (AREA)
  • Electroluminescent Light Sources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2020144610A 2019-12-26 2020-08-28 走査型縮小投影光学系及びこれを用いたレーザ加工装置 Active JP7491778B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024079885A JP7815324B2 (ja) 2019-12-26 2024-05-16 走査型縮小投影光学系、レーザ加工装置、リフト装置、レーザ加工方法及びリフト方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019235371 2019-12-26
JP2019235371 2019-12-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024079885A Division JP7815324B2 (ja) 2019-12-26 2024-05-16 走査型縮小投影光学系、レーザ加工装置、リフト装置、レーザ加工方法及びリフト方法

Publications (3)

Publication Number Publication Date
JP2021151666A JP2021151666A (ja) 2021-09-30
JP2021151666A5 JP2021151666A5 (https=) 2023-09-06
JP7491778B2 true JP7491778B2 (ja) 2024-05-28

Family

ID=77887021

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020144610A Active JP7491778B2 (ja) 2019-12-26 2020-08-28 走査型縮小投影光学系及びこれを用いたレーザ加工装置
JP2024079885A Active JP7815324B2 (ja) 2019-12-26 2024-05-16 走査型縮小投影光学系、レーザ加工装置、リフト装置、レーザ加工方法及びリフト方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024079885A Active JP7815324B2 (ja) 2019-12-26 2024-05-16 走査型縮小投影光学系、レーザ加工装置、リフト装置、レーザ加工方法及びリフト方法

Country Status (1)

Country Link
JP (2) JP7491778B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022181397A1 (ja) * 2021-02-26 2022-09-01 株式会社アマダ レーザ加工機およびレーザ加工方法
EP4375002A4 (en) * 2021-07-20 2025-07-09 Shinetsu Chemical Co SCANNING-TYPE REDUCTION PROJECTION OPTICAL SYSTEM AND LASER MACHINING APPARATUS USING SAME
WO2024218915A1 (ja) * 2023-04-19 2024-10-24 信越エンジニアリング株式会社 レーザ照射装置、レーザ加工装置、露光装置、レーザ加工方法、露光処理方法、マスクの設置方法、レーザ加工装置の設置方法、露光装置の設置方法、マスク及びレーザ照射システム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013520822A (ja) 2010-02-26 2013-06-06 エクシコ フランス レーザーエネルギーにより半導体材料表面を照射する方法と装置
JP2015534903A (ja) 2012-11-02 2015-12-07 エム−ソルヴ・リミテッド 誘電体基板内に微細スケール構造を形成するための方法及び装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7744770B2 (en) * 2004-06-23 2010-06-29 Sony Corporation Device transfer method
JP2014067671A (ja) * 2012-09-27 2014-04-17 Hitachi High-Technologies Corp 有機ｅｌパネル製造装置および有機ｅｌパネル製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013520822A (ja) 2010-02-26 2013-06-06 エクシコ フランス レーザーエネルギーにより半導体材料表面を照射する方法と装置
JP2015534903A (ja) 2012-11-02 2015-12-07 エム−ソルヴ・リミテッド 誘電体基板内に微細スケール構造を形成するための方法及び装置

Also Published As

Publication number Publication date
JP7815324B2 (ja) 2026-02-17
JP2024147531A (ja) 2024-10-16
JP2021151666A (ja) 2021-09-30

Similar Documents

Publication Publication Date Title
JP7819043B2 (ja) リフト方法、再転写方法及びディスプレイの製造方法
JP7815324B2 (ja) 走査型縮小投影光学系、レーザ加工装置、リフト装置、レーザ加工方法及びリフト方法
TWI784911B (zh) 轉移裝置
JP7094162B2 (ja) リフト装置及び使用方法
CN106483773B (zh) 投影曝光装置、投影曝光方法以及掩模版
KR20190053110A (ko) 노광 시스템, 노광 방법 및 표시용 패널 기판의 제조방법
CN1659478A (zh) 用于把掩模投影到衬底上的方法和装置
WO2012148117A2 (ko) 레이저 분할빔을 이용한 선택적 박막 제거장치
JP2021151666A5 (https=)
KR20130098838A (ko) 레이저 가공 장치, 레이저 가공 방법 및 레이저 가공 프로그램을 기록한 컴퓨터가 판독 가능한 기록 매체
JP7490848B2 (ja) レーザ加工方法、フォトマスク及びレーザ加工システム
US10908507B2 (en) Micro LED array illumination source
JP7255000B2 (ja) 不良箇所の除去方法、リフト方法、フォトマスク及びリフトシステム
CN103238113B (zh) 光刻设备和器件制造方法
TWI916824B (zh) 雷射加工方法、縮小投影光學系統、去除多餘部位的基板的製造方法以及雷射加工裝置
TWI905274B (zh) 掃描型縮小投影光學系統、雷射加工裝置、雷射誘導正向轉移裝置、雷射加工方法、雷射誘導正向轉移方法、封裝有照射對象物的基板的製造方法、封裝有微小元件的基板的製造方法、不良部位的去除方法以及再轉印方法
TW202435007A (zh) 雷射加工方法、縮小投影光學系統、去除多餘部位的基板的製造方法以及雷射加工裝置
TW202604659A (zh) 雷射加工方法、光罩、雷射加工系統

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20210420

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20210521

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20210420

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20210521

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210709

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20211122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20211122

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230821

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230829

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240416

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20240417

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240516

R150 Certificate of patent or registration of utility model

Ref document number: 7491778

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150