JP7472852B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7472852B2
JP7472852B2 JP2021088983A JP2021088983A JP7472852B2 JP 7472852 B2 JP7472852 B2 JP 7472852B2 JP 2021088983 A JP2021088983 A JP 2021088983A JP 2021088983 A JP2021088983 A JP 2021088983A JP 7472852 B2 JP7472852 B2 JP 7472852B2
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JP
Japan
Prior art keywords
wiring
semiconductor element
substrate
metal body
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021088983A
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English (en)
Japanese (ja)
Other versions
JP2022181812A (ja
JP2022181812A5 (enrdf_load_stackoverflow
Inventor
敬 佐藤
良 木村
悠嗣 小嶌
善次 坂本
知巳 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2021088983A priority Critical patent/JP7472852B2/ja
Priority to PCT/JP2022/018363 priority patent/WO2022249803A1/ja
Publication of JP2022181812A publication Critical patent/JP2022181812A/ja
Publication of JP2022181812A5 publication Critical patent/JP2022181812A5/ja
Application granted granted Critical
Publication of JP7472852B2 publication Critical patent/JP7472852B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inverter Devices (AREA)
JP2021088983A 2021-05-27 2021-05-27 半導体装置 Active JP7472852B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021088983A JP7472852B2 (ja) 2021-05-27 2021-05-27 半導体装置
PCT/JP2022/018363 WO2022249803A1 (ja) 2021-05-27 2022-04-21 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021088983A JP7472852B2 (ja) 2021-05-27 2021-05-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2022181812A JP2022181812A (ja) 2022-12-08
JP2022181812A5 JP2022181812A5 (enrdf_load_stackoverflow) 2023-03-09
JP7472852B2 true JP7472852B2 (ja) 2024-04-23

Family

ID=84228782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021088983A Active JP7472852B2 (ja) 2021-05-27 2021-05-27 半導体装置

Country Status (2)

Country Link
JP (1) JP7472852B2 (enrdf_load_stackoverflow)
WO (1) WO2022249803A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025021309A (ja) * 2023-07-31 2025-02-13 株式会社東芝 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015222743A (ja) 2014-05-22 2015-12-10 三菱電機株式会社 半導体装置
JP2018117054A (ja) 2017-01-19 2018-07-26 株式会社 日立パワーデバイス 半導体装置および電力変換装置
WO2018173511A1 (ja) 2017-03-22 2018-09-27 株式会社デンソー 半導体装置
WO2020262097A1 (ja) 2019-06-28 2020-12-30 日立オートモティブシステムズ株式会社 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6264230B2 (ja) * 2014-08-28 2018-01-24 三菱電機株式会社 半導体装置
JP2018026417A (ja) * 2016-08-09 2018-02-15 三菱電機株式会社 電力用半導体装置
JP6997690B2 (ja) * 2018-09-26 2022-01-18 日立Astemo株式会社 パワーモジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015222743A (ja) 2014-05-22 2015-12-10 三菱電機株式会社 半導体装置
JP2018117054A (ja) 2017-01-19 2018-07-26 株式会社 日立パワーデバイス 半導体装置および電力変換装置
WO2018173511A1 (ja) 2017-03-22 2018-09-27 株式会社デンソー 半導体装置
WO2020262097A1 (ja) 2019-06-28 2020-12-30 日立オートモティブシステムズ株式会社 半導体装置およびその製造方法

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Publication number Publication date
JP2022181812A (ja) 2022-12-08
WO2022249803A1 (ja) 2022-12-01

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