JP7466080B2 - レーザアニール装置及びレーザアニール方法 - Google Patents
レーザアニール装置及びレーザアニール方法 Download PDFInfo
- Publication number
- JP7466080B2 JP7466080B2 JP2023545118A JP2023545118A JP7466080B2 JP 7466080 B2 JP7466080 B2 JP 7466080B2 JP 2023545118 A JP2023545118 A JP 2023545118A JP 2023545118 A JP2023545118 A JP 2023545118A JP 7466080 B2 JP7466080 B2 JP 7466080B2
- Authority
- JP
- Japan
- Prior art keywords
- laser light
- laser
- amorphous silicon
- silicon film
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic materials other than metals or composite materials
- B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021143326 | 2021-09-02 | ||
| JP2021143326 | 2021-09-02 | ||
| PCT/JP2022/026186 WO2023032450A1 (ja) | 2021-09-02 | 2022-06-30 | レーザアニール装置及びレーザアニール方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023032450A1 JPWO2023032450A1 (https=) | 2023-03-09 |
| JP7466080B2 true JP7466080B2 (ja) | 2024-04-12 |
Family
ID=85412083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023545118A Active JP7466080B2 (ja) | 2021-09-02 | 2022-06-30 | レーザアニール装置及びレーザアニール方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240157471A1 (https=) |
| JP (1) | JP7466080B2 (https=) |
| KR (1) | KR20240046868A (https=) |
| DE (1) | DE112022004267T5 (https=) |
| WO (1) | WO2023032450A1 (https=) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308009A (ja) | 2000-02-15 | 2001-11-02 | Matsushita Electric Ind Co Ltd | 非単結晶膜、非単結晶膜付き基板、その製造方法及びその製造装置並びにその検査方法及びその検査装置並びにそれを用いた薄膜トランジスタ、薄膜トランジスタアレイ及び画像表示装置 |
| JP2004064066A (ja) | 2002-06-07 | 2004-02-26 | Fuji Photo Film Co Ltd | レーザアニール装置 |
| JP2004103794A (ja) | 2002-09-09 | 2004-04-02 | Sumitomo Heavy Ind Ltd | シリコン結晶化方法及びレーザアニール装置 |
| JP2004349643A (ja) | 2003-05-26 | 2004-12-09 | Fuji Photo Film Co Ltd | レーザアニール装置 |
| JP2005072183A (ja) | 2003-08-22 | 2005-03-17 | Mitsubishi Electric Corp | 薄膜半導体の製造方法および製造装置 |
| JP2005079497A (ja) | 2003-09-03 | 2005-03-24 | Toshiba Corp | レーザ加工方法と加工装置および表示装置の製造方法と表示装置 |
| JP2007027612A (ja) | 2005-07-21 | 2007-02-01 | Sony Corp | 照射装置および照射方法 |
| JP2007158372A (ja) | 2007-02-06 | 2007-06-21 | Advanced Display Inc | 半導体装置の製造方法および製造装置 |
| WO2008129719A1 (ja) | 2007-04-18 | 2008-10-30 | Mitsubishi Electric Corporation | 半導体薄膜の製造方法および半導体装置 |
| JP2008288608A (ja) | 2008-07-14 | 2008-11-27 | Advanced Lcd Technologies Development Center Co Ltd | 半導体結晶化装置 |
| JP2009188378A (ja) | 2007-11-08 | 2009-08-20 | Applied Materials Inc | パルス列アニーリング方法および装置 |
| JP2010034366A (ja) | 2008-07-30 | 2010-02-12 | Sony Corp | 半導体処理装置および半導体処理方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2856533B2 (ja) * | 1990-10-05 | 1999-02-10 | 株式会社東芝 | 多結晶シリコン薄膜の製造方法 |
-
2022
- 2022-06-30 WO PCT/JP2022/026186 patent/WO2023032450A1/ja not_active Ceased
- 2022-06-30 JP JP2023545118A patent/JP7466080B2/ja active Active
- 2022-06-30 DE DE112022004267.2T patent/DE112022004267T5/de active Pending
- 2022-06-30 KR KR1020247002159A patent/KR20240046868A/ko active Pending
-
2024
- 2024-01-21 US US18/418,291 patent/US20240157471A1/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308009A (ja) | 2000-02-15 | 2001-11-02 | Matsushita Electric Ind Co Ltd | 非単結晶膜、非単結晶膜付き基板、その製造方法及びその製造装置並びにその検査方法及びその検査装置並びにそれを用いた薄膜トランジスタ、薄膜トランジスタアレイ及び画像表示装置 |
| JP2004064066A (ja) | 2002-06-07 | 2004-02-26 | Fuji Photo Film Co Ltd | レーザアニール装置 |
| JP2004103794A (ja) | 2002-09-09 | 2004-04-02 | Sumitomo Heavy Ind Ltd | シリコン結晶化方法及びレーザアニール装置 |
| JP2004349643A (ja) | 2003-05-26 | 2004-12-09 | Fuji Photo Film Co Ltd | レーザアニール装置 |
| JP2005072183A (ja) | 2003-08-22 | 2005-03-17 | Mitsubishi Electric Corp | 薄膜半導体の製造方法および製造装置 |
| JP2005079497A (ja) | 2003-09-03 | 2005-03-24 | Toshiba Corp | レーザ加工方法と加工装置および表示装置の製造方法と表示装置 |
| JP2007027612A (ja) | 2005-07-21 | 2007-02-01 | Sony Corp | 照射装置および照射方法 |
| JP2007158372A (ja) | 2007-02-06 | 2007-06-21 | Advanced Display Inc | 半導体装置の製造方法および製造装置 |
| WO2008129719A1 (ja) | 2007-04-18 | 2008-10-30 | Mitsubishi Electric Corporation | 半導体薄膜の製造方法および半導体装置 |
| JP2009188378A (ja) | 2007-11-08 | 2009-08-20 | Applied Materials Inc | パルス列アニーリング方法および装置 |
| JP2008288608A (ja) | 2008-07-14 | 2008-11-27 | Advanced Lcd Technologies Development Center Co Ltd | 半導体結晶化装置 |
| JP2010034366A (ja) | 2008-07-30 | 2010-02-12 | Sony Corp | 半導体処理装置および半導体処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240157471A1 (en) | 2024-05-16 |
| JPWO2023032450A1 (https=) | 2023-03-09 |
| KR20240046868A (ko) | 2024-04-11 |
| DE112022004267T5 (de) | 2024-06-20 |
| WO2023032450A1 (ja) | 2023-03-09 |
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