JP7450313B2 - 金属固体の製造方法 - Google Patents
金属固体の製造方法 Download PDFInfo
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- JP7450313B2 JP7450313B2 JP2023507127A JP2023507127A JP7450313B2 JP 7450313 B2 JP7450313 B2 JP 7450313B2 JP 2023507127 A JP2023507127 A JP 2023507127A JP 2023507127 A JP2023507127 A JP 2023507127A JP 7450313 B2 JP7450313 B2 JP 7450313B2
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- metal
- metal powder
- melting point
- high melting
- point material
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- 229910052751 metal Inorganic materials 0.000 title claims description 561
- 239000002184 metal Substances 0.000 title claims description 559
- 239000007787 solid Substances 0.000 title claims description 216
- 238000004519 manufacturing process Methods 0.000 title claims description 131
- 239000000843 powder Substances 0.000 claims description 346
- 239000000463 material Substances 0.000 claims description 344
- 238000002844 melting Methods 0.000 claims description 294
- 230000008018 melting Effects 0.000 claims description 289
- 229920005989 resin Polymers 0.000 claims description 38
- 239000011347 resin Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 28
- 230000001678 irradiating effect Effects 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 230000002745 absorbent Effects 0.000 claims description 23
- 239000002250 absorbent Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 22
- 239000011358 absorbing material Substances 0.000 claims description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims description 21
- 150000004706 metal oxides Chemical class 0.000 claims description 21
- 238000005245 sintering Methods 0.000 claims description 21
- 238000003825 pressing Methods 0.000 claims description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 239000011261 inert gas Substances 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000003575 carbonaceous material Substances 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
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- 239000004332 silver Substances 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
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- 239000011701 zinc Substances 0.000 claims description 2
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- 239000000155 melt Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 description 22
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
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- 229910000838 Al alloy Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052752 metalloid Inorganic materials 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
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- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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- 150000001247 metal acetylides Chemical class 0.000 description 1
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- 238000005272 metallurgy Methods 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
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- 102220005308 rs33960931 Human genes 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- 239000010959 steel Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- B22F10/28—Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
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- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
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Description
高融点材料の層を形成した。高融点材料は93質量%の酸化アルミニウム(Al2O3)の粉体と7質量%の炭素(C)の粉体からなっていた。高融点材料の層の表面の凹部が設けられる部分を円形のアルミ板で覆い、高融点材料の層の表面に硬化性材料を噴射し、高融点材料の層のアルミ板で覆われていない部分に、硬化性材料を浸透させた。硬化性材料は、50質量%のUV硬化性樹脂(AMZLAB GmbH製 Standard Photopolymer Resin)と50質量%のエタノールを含んでいた。その後、高融点材料の層にUV光を照射し、高融点材料の層に浸透した硬化性樹脂を硬化させた。アルミ板で覆われ、硬化されなかった高融点材料は、エアシャワーにより除去した。これにより、高融点材料の層に、円柱状の凹部が形成された。円柱状の凹部の底面の直径は7.0mm、深さは4.0mmであった。
高融点材料の第1層を形成した。高融点材料は93質量%の酸化アルミニウム(Al2O3)の粉体と7質量%の炭素(C)の粉体からなっていた。高融点材料の第1層の表面の凹部が設けられる部分を円形のアルミ板で覆い、高融点材料の第1層の表面に硬化性材料を噴射し、高融点材料の第1層のアルミ板で覆われていない部分に、硬化性材料を浸透させた。硬化性材料は、50質量%のUV硬化性樹脂(AMZLAB GmbH製 Standard Photopolymer Resin)と50質量%のエタノールを含んでいた。その後、高融点材料の第1層にUV光を照射し、高融点材料の第1層に浸透した硬化性樹脂を硬化させた。アルミ板で覆われ、硬化されなかった高融点材料は、エアシャワーにより除去した。これにより、高融点材料の第1層に、円柱状の凹部が形成された。円柱状の凹部の底面の直径は7.0mm、深さは4.2mmであった。
高融点材料の層を形成した。高融点材料は93質量%の酸化アルミニウム(Al2O3)の粉体と7質量%の炭素(C)の粉体からなっていた。高融点材料の層の表面の凹部が設けられる部分を三角形のアルミ板で覆い、高融点材料の層の表面に硬化性材料を噴射し、高融点材料の層のアルミ板で覆われていない部分に、硬化性材料を浸透させた。硬化性材料は、50質量%のUV硬化性樹脂(AMZLAB GmbH製 Standard Photopolymer Resin)と50質量%のエタノールを含んでいた。その後、高融点材料の層にUV光を照射し、高融点材料の層に浸透した硬化性樹脂を硬化させた。アルミ板で覆われ、硬化されなかった高融点材料は、エアシャワーにより除去した。これにより、高融点材料の層に、三角柱状の凹部が形成された。三角柱状の凹部の底面の底辺の長さは8.0mm、深さは1.4mmであった。
高融点材料の層を形成した。高融点材料は93質量%の酸化アルミニウム(Al2O3)の粉体と7質量%の炭素(C)の粉体からなっていた。高融点材料の層の表面の凹部が設けられる部分を四角形のアルミ板で覆い、高融点材料の層の表面に硬化性材料を噴射し、高融点材料の層のアルミ板で覆われていない部分に、硬化性材料を浸透させた。硬化性材料は、50質量%のUV硬化性樹脂(AMZLAB GmbH製 Standard Photopolymer Resin)と50質量%のエタノールを含んでいた。その後、高融点材料の層にUV光を照射し、高融点材料の層に浸透した硬化性樹脂を硬化させた。アルミ板で覆われ、硬化されなかった高融点材料は、エアシャワーにより除去した。これにより、高融点材料の層に、四角柱状の凹部が形成された。四角柱状の凹部の底面の1辺の長さは7.2mm、深さは1.9mmであった。
金属粉末(SUS316L、粒径100μm以下)を用意した。樹脂型の材料としてPolyCast(登録商標、polymaker)を用意した。PolyCastの材質はポリビニルブチラル(>80%)であり、融点は135℃から210℃であり、分解点は>280℃であり、発火点は380℃である。PolyCastを用い、図15に示す外径φ10の樹脂型を3Dプリンター(polymaker)で成型した。
炭素鋼(S50C)からなる金属粉体を用意し、500MPaの圧力により、角柱状の第1の金属圧粉体を成型した。酸化アルミニウム(Al2O3)の粉体と炭素(C)の粉体からなる高融点材料を用意した。第1の金属圧粉体を高融点材料で覆った。空気雰囲気下で、高融点材料と金属圧粉体に、200Wのマイクロ波を40分照射し、金属圧粉体を400℃(推定値)まで加熱し、第1の金属固体を得た。
高融点材料が、酸化アルミニウム(Al2O3)の粉体と炭化ケイ素(SiC)の粉体からなる点以外は、実施例6と同様に、第2の金属固体を作製した。第2の金属固体の写真を図19に示す。第2の金属固体において、第1の金属圧粉体であった部分と、第2の金属圧粉体であった部分と、の境界面は、欠陥なく接合していることが確認された。第2の金属固体において、アルミニウム合金(A6061)からなる部分は、表面が炭化されていなかった。したがって、高融点材料に炭化ケイ素を含ませることにより、作製される金属固体表面が炭化されないことが示された。
Claims (47)
- 型、容器、ステージ、又は固体上に配置され、周囲の少なくとも一部が高融点材料で覆われた金属粉末にマイクロ波を照射して前記金属粉末を加熱し、当該金属粉末を焼結又は溶融固化することを含み、
前記金属粉末の前記高融点材料で覆われている部分において、前記金属粉末と前記高融点材料が密着しており、
前記高融点材料の融点が前記金属粉末の融点より高く、
前記高融点材料が、
前記金属粉末より前記マイクロ波を吸収する程度が低い断熱材料であって、酸化物を含む断熱材料と、
前記金属粉末が前記マイクロ波を吸収する温度帯より少なくとも一部が低い温度帯で前記マイクロ波を吸収する吸収材料であって、炭素材料を含む吸収材料と、
の混合物を含む、
金属固体の製造方法。 - 前記配置された金属粉末の周囲の少なくとも一部を前記高融点材料で覆うことと、前記金属粉末を焼結又は溶融固化することと、を繰り返す、請求項1に記載の金属固体の製造方法。
- 積層された金属固体が形成される、請求項2に記載の金属固体の製造方法。
- 前記高融点材料が、1質量%から70質量%の前記吸収材料を含む、請求項1から3のいずれか1項に記載の金属固体の製造方法。
- 前記断熱材料が、酸化アルミニウム、酸化ケイ素、酸化マグネシウム、酸化ジルコニウム、及び酸化チタンからなる群から選択される少なくとも1つを含む、請求項1から4のいずれか1項に記載の金属固体の製造方法。
- 前記吸収材料が、炭素、黒鉛、炭化ケイ素、炭素樹脂、及び金属炭化物からなる群から選択される少なくとも1つを含む、請求項1から5のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が、金属を含む、請求項1から6のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が、鉄、ニッケル、銅、金、銀、アルミニウム、及びコバルトからなる群から選択される少なくとも1つを含む、請求項1から7のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が、金属化合物を含む、請求項1から8のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が、鉄、ニッケル、銅、金、銀、アルミニウム、及びコバルトからなる群から選択される少なくとも1つの化合物を含む、請求項1から9のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が、合金成分をさらに含む、請求項7から10のいずれか1項に記載の金属固体の製造方法。
- 前記合金成分が、ケイ素、マンガン、クロム、ニッケル、炭素、ホウ素、銅、アルミニウム、チタン、ニオブ、バナジウム、亜鉛及び硫黄からからなる群から選択される少なくとも1つを含む、請求項11に記載の金属固体の製造方法。
- 前記金属粉末の平均粒子径が200μm以下である、請求項1から12のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が金属酸化物を含み、前記金属粉末にマイクロ波を照射することにおいて、前記金属粉末が還元される、請求項1から13のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が金属酸化物を含み、前記金属粉末にマイクロ波を照射することにおいて、前記金属粉末が焼結される、請求項1から14のいずれか1項に記載の金属固体の製造方法。
- 前記高融点材料が型又は容器をなしている、請求項1から15のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が圧粉体をなしている、請求項1から16のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末にマイクロ波を照射することの前に、前記金属粉末に圧力を加えることをさらに含む、請求項1から17のいずれか1項に記載の金属固体の製造方法。
- 前記圧力が1MPaから2000MPaである、請求項18に記載の金属固体の製造方法。
- 前記金属粉末にマイクロ波を照射することの後に、前記金属粉末に圧力を加えることをさらに含む、請求項1から19のいずれか1項に記載の金属固体の製造方法。
- 前記圧力が1MPaから2000MPaである、請求項20に記載の金属固体の製造方法。
- 前記金属粉末にマイクロ波を照射することが、不活性ガス雰囲気下で行われる、請求項1から21のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末にマイクロ波を照射することが、還元雰囲気下で行われる、請求項1から22のいずれか1項に記載の金属固体の製造方法。
- 前記金属粉末が金属酸化物を含み、前記金属粉末にマイクロ波を照射する前に、前記金属酸化物を還元することをさらに含む、請求項1から23のいずれか1項に記載の金属固体の製造方法。
- 前記配置された金属粉末の周囲の少なくとも一部を前記金属粉末の融点より融点が高い高融点材料で覆うことが、
前記高融点材料の層を形成することと、
前記高融点材料の層に凹部を形成することと、
前記凹部に前記金属粉末を入れることと、
を含む、請求項1から24のいずれか1項に記載の金属固体の製造方法。 - 前記高融点材料の層に前記凹部を形成することが、
前記高融点材料の層の一部を硬化することと、
前記高融点材料の層の未硬化部分を除去することと、
を含む、請求項25に記載の金属固体の製造方法。 - 前記高融点材料の層の前記一部を硬化することが、前記高融点材料の層の前記一部に硬化性材料を含めることを含む、請求項26に記載の金属固体の製造方法。
- 前記高融点材料の層の前記一部に硬化性材料を含侵させる、請求項27に記載の金属固体の製造方法。
- 光照射により、前記高融点材料の層の前記一部を硬化する、請求項26から28のいずれか1項に記載の金属固体の製造方法。
- ステージであって、金属粉末と、当該ステージ上に配置された前記金属粉末の周囲の少なくとも一部を覆う、前記金属粉末の融点より融点が高い高融点材料と、が配置されるためのステージと、
前記周囲の少なくとも一部が前記高融点材料で覆われた前記金属粉末にマイクロ波を照射して前記金属粉末を加熱し、当該金属粉末を焼結又は溶融固化するためのマイクロ波照射部と、
を備え、
前記配置された金属粉末の前記高融点材料で覆われている部分において、前記金属粉末と前記高融点材料が密着するよう前記ステージ上に配置され、
前記高融点材料が、
前記金属粉末より前記マイクロ波を吸収する程度が低い断熱材料であって、酸化物を含む断熱材料と、
前記金属粉末が前記マイクロ波を吸収する温度帯より少なくとも一部が低い温度帯で前記マイクロ波を吸収する吸収材料であって、炭素材料を含む吸収材料と、
の混合物を含む、
金属固体の製造装置。 - 前記ステージ上に前記高融点材料を配置するための高融点材料配置部をさらに備える、請求項30に記載の金属固体の製造装置。
- 前記高融点材料配置部が、前記ステージ上に前記高融点材料を塗布する、請求項31に記載の金属固体の製造装置。
- 前記高融点材料配置部が、前記ステージ上に、前記高融点材料の層を積層する、請求項31又は32に記載の金属固体の製造装置。
- 前記高融点材料の少なくとも一部に硬化性材料を添加するための硬化性材料添加部をさらに備える、請求項30から33のいずれか1項に記載の金属固体の製造装置。
- 前記高融点材料の少なくとも一部を硬化するための硬化装置をさらに備える、請求項30から34のいずれか1項に記載の金属固体の製造装置。
- 未硬化の前記高融点材料を除去するための未硬化材料除去部をさらに備える、請求項35に記載の金属固体の製造装置。
- 前記ステージ上に前記金属粉末を配置するための金属粉末配置部をさらに備える、請求項30から36のいずれか1項に記載の金属固体の製造装置。
- 前記金属粉末配置部が、前記ステージ上に前記金属粉末を塗布する、請求項37に記載の金属固体の製造装置。
- 前記金属粉末配置部が、前記高融点材料の凹部に前記金属粉末を配置する、請求項37又は38に記載の金属固体の製造装置。
- 前記ステージ上に配置された前記金属粉末に圧力を加えるための加圧部をさらに備える、請求項30から39のいずれか1項に記載の金属固体の製造装置。
- 前記加圧部が、前記マイクロ波照射部が前記金属粉末にマイクロ波を照射する前に、前記金属粉末に圧力を加える、請求項40に記載の金属固体の製造装置。
- 前記加圧部が、前記マイクロ波照射部が前記金属粉末にマイクロ波を照射した後に、前記金属粉末に圧力を加える、請求項40又は41に記載の金属固体の製造装置。
- 前記金属粉末に不活性ガスを供給するための不活性ガス供給部をさらに備える、請求項30から42のいずれか1項に記載の金属固体の製造装置。
- 前記金属粉末に還元ガスを供給するための還元ガス供給部をさらに備える、請求項30から43のいずれか1項に記載の金属固体の製造装置。
- 前記ステージ上に前記高融点材料を配置するための高融点材料配置部と、
前記ステージ上に前記金属粉末を配置するための金属粉末配置部と、
をさらに備え、
前記高融点材料配置部と前記金属粉末配置部が、前記ステージ上に、前記高融点材料で囲まれた前記金属粉末を配置し、前記マイクロ波照射部が前記金属粉末を焼結又は溶融固化することを繰り返す、
請求項30に記載の金属固体の製造装置。 - 前記金属粉末が金属酸化物を含み、前記マイクロ波照射部が前記金属粉末にマイクロ波を照射する前に、前記金属酸化物を還元する還元装置をさらに備える、請求項30から45のいずれか1項に記載の金属固体の製造装置。
- 前記高融点材料が、1質量%から70質量%の前記吸収材料を含む、請求項30から46のいずれか1項に記載の金属固体の製造装置。
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