JP7444773B2 - Ultraviolet curing adhesive tape for semiconductor wafer processing, method for manufacturing semiconductor chips, and method for using this tape - Google Patents

Description

The present invention relates to an ultraviolet curable adhesive tape for processing semiconductor wafers, a method for manufacturing semiconductor chips, and a method for using this tape.

In recent years, high-density packaging technology has become increasingly important in response to demands for higher functionality and smaller size of mobile information terminals such as smartphones. For example, with the spread of IC cards and the rapid increase in the capacity of USB memories, and with the increase in the number of stacked chips, there is a desire for chips to be made even thinner. For this reason, it has become necessary to reduce the thickness of semiconductor chips, which conventionally had a thickness of about 200 μm to 350 μm, to a thickness of 50 μm to 100 μm or less.
On the other hand, there is a tendency to increase the diameter of semiconductor wafers in order to increase the number of semiconductor chips that can be manufactured in one process and improve chip manufacturing efficiency. The trend of semiconductor wafers becoming thinner and larger in diameter is particularly noticeable in the field of flash memory, where NAND and NOR types exist, and DRAM, which is a volatile memory.
At present, it has become standard to grind a 12-inch semiconductor wafer to a thickness of 100 μm or less.

For example, the performance of memory devices is improved by stacking semiconductor chips, so there is a great need for thin film grinding. To achieve thinner chips, there is a method of thin-film grinding using a special protective tape in the normal process, and a method called pre-dicing, in which grooves of a predetermined depth are formed from the front side of the wafer, and then grooves are formed on the back side of the wafer. A method of manufacturing a semiconductor chip is known in which grinding is performed from the ground. Using such methods, it has become possible to manufacture inexpensive and high-performance flash memories.
There is also an increasing demand for thinner bumped wafers used for flip-chip mounting. This bumped wafer has large irregularities on its surface, which makes it difficult to process a thin film, and if backside grinding is performed using a normal protective tape, the wafer may crack or the thickness accuracy of the wafer may deteriorate. Therefore, a special surface protection tape is used for grinding wafers with bumps (see Cited Document 1).

However, as semiconductor wafers have become thinner in recent years, a problem has arisen in that the wafers become more warped after thin film grinding. If the wafer is greatly warped, the wafer cannot be smoothly transported by the transport mechanism after grinding, and there is a possibility that the wafer cannot be taken out or is damaged due to being dropped during transport.
This warping of the wafer becomes particularly large when an ultraviolet curable surface protection tape is used as the surface protection tape. When UV-curable tapes are irradiated with UV rays, the adhesive in the surface protection tape hardens and shrinks due to a curing reaction, resulting in greater warpage and a higher risk of wafer damage than non-UV-curable tapes. Become.

In the conventional wafer processing method, a surface protection tape for grinding is attached to a semiconductor wafer, the wafer is ground to a predetermined thickness, and the semiconductor wafer is irradiated with ultraviolet rays from the surface protection tape side to improve the adhesion of the surface protection tape. A process is used in which a dicing tape is attached to the back side of the semiconductor wafer, and then the surface protection tape is peeled off.

Japanese Patent Application Publication No. 2004-235395

In the above-mentioned conventional process, when the surface protection tape is irradiated with ultraviolet rays, the wafer warps become large and transportation problems occur. Therefore, in order to suppress the warping of the wafer, the surface protection tape is not irradiated with UV rays after grinding, but the surface protection tape is irradiated with UV rays after the dicing tape is attached, reducing the adhesion of the surface protection tape. There are possible ways.

However, if the surface protection tape is irradiated with ultraviolet rays after pasting the dicing tape, a part of the surface of the dicing tape will also be irradiated with ultraviolet rays. In particular, the ultraviolet rays penetrate from the edge of the wafer to the dicing tape on the back side, and in the case of an ultraviolet curable dicing tape, the adhesive strength near the wafer edge decreases due to the curing reaction. For this reason, when blade dicing is selected as the subsequent cutting and separation (dicing) process of the semiconductor wafer, chips in areas where the adhesive strength has decreased are scattered during dicing, resulting in "chip flying". will occur. The occurrence of chip flying causes problems such as a decrease in chip yield (chip manufacturing efficiency) and damage to the blade if the flying chips collide with the blade.

In order to solve the above problem, the dicing tape is required to have a property that the adhesive strength of the dicing tape does not decrease when irradiated with ultraviolet rays from the surface protection tape side. By using a tape with reduced ultraviolet curing reactivity or a non-ultraviolet curable tape as the dicing tape having the above properties, chip flying during dicing can be suppressed. On the other hand, when such a dicing tape is used, it becomes difficult to peel the chips from the dicing tape in the pick-up process for taking out the cut and separated chips, resulting in insufficient "chip pick-up performance."

When the present invention is used in the processing process of semiconductor wafers, it is possible to suppress the warping of the thin film wafer due to ultraviolet ray irradiation to the surface protection tape, and also suppress chip flying during dicing and improve subsequent pick-up. An object of the present invention is to provide an ultraviolet curable adhesive tape for processing semiconductor wafers that is both durable and durable. Furthermore, the present invention provides a semiconductor chip that can suppress the warping of a thin film wafer due to ultraviolet irradiation on the surface protection tape, and that also suppresses chip fly-off during dicing and has excellent subsequent pick-up properties. A manufacturing method is provided. In addition, the UV-curable adhesive for semiconductor wafer processing can cure the UV-curable surface protection tape and sufficiently reduce the adhesive strength while suppressing the decrease in the adhesive strength of the UV-curable adhesive tape for semiconductor wafer processing. The task is to provide a method for using tape.

The above object of the present invention was achieved by the following means.
<1>
An ultraviolet curable adhesive tape for semiconductor wafer processing, comprising at least a base film and an ultraviolet curable adhesive layer provided on the base film,
Ultraviolet curing for semiconductor wafer processing, characterized in that the adhesive strength of the adhesive tape measured by a 90° peel test method for SUS304 based on JIS Z 0237 satisfies both (1) and (2) below. molded adhesive tape.
(1) [Adhesive strength after UV irradiation with an integrated light amount of 500 mJ/cm ² by a UV irradiation device using an LED lamp with a wavelength of 365 nm as a light source] / [Adhesive strength before UV irradiation] ≧ 0.50
(2) [Adhesive strength after UV irradiation with an integrated light amount of 500 mJ/cm ² by an ultraviolet irradiation device using a high-pressure mercury lamp as a light source] / [Adhesive strength before UV irradiation] ≦0.50
<2>
The ultraviolet curing adhesive tape for processing semiconductor wafers according to <1>, wherein the [adhesive strength before ultraviolet irradiation] is 1N/25mm to 10N/25mm.
<3>
The adhesive layer contains a base polymer component and a photopolymerization initiator, and the content of the photopolymerization initiator is 0.1 to 3.0 parts by mass based on 100 parts by mass of the base polymer component. , the ultraviolet curing adhesive tape for semiconductor wafer processing according to <1> or <2>.
<4>
The ultraviolet curable adhesive for semiconductor wafer processing according to any one of <1> to <3>, wherein the base polymer is a polymer having an ultraviolet polymerizable carbon-carbon double bond in a side chain. tape.
<5>
The ultraviolet curing adhesive tape for semiconductor wafer processing according to any one of <1> to <4>, wherein the adhesive layer contains an ultraviolet absorber.
<6>
The ultraviolet curing adhesive tape for processing semiconductor wafers according to any one of <1> to <5>, which is used in the process of dicing semiconductor wafers.
<7>
A method for manufacturing a semiconductor chip, comprising the following steps (a) to (e).
[Process]
(a) a step of grinding the back side of the semiconductor wafer with an ultraviolet curable surface protection tape attached to the pattern side of the semiconductor wafer having a patterned side on the front side;
(b) a step of laminating the ultraviolet curing adhesive tape for semiconductor wafer processing according to any one of <1> to <6> on the back surface of the ground semiconductor wafer and supporting and fixing it to a ring frame;
(c) a step of irradiating ultraviolet rays from the surface protection tape side with a first ultraviolet irradiation device and then peeling off the surface protection tape;
(d) a step of cutting the semiconductor wafer from the pattern side of the semiconductor wafer using a dicing device to separate it into individual chips;
(e) A step of irradiating ultraviolet rays from the adhesive tape side using a second ultraviolet irradiation device.
<8>
The method for manufacturing a semiconductor chip according to <7>, wherein the first ultraviolet irradiation device is an ultraviolet irradiation device using an LED lamp with a wavelength of 365 nm as a light source.
<9>
The method for manufacturing a semiconductor chip according to <7> or <8>, wherein the second ultraviolet irradiation device is an ultraviolet irradiation device using a high-pressure mercury lamp as a light source.
<10>
An ultraviolet curable surface protection tape is bonded to one side of a semiconductor wafer, and an ultraviolet curable adhesive for semiconductor wafer processing according to any one of <1> to <6> is attached to the other side of the semiconductor wafer. A method of using an ultraviolet curable pressure-sensitive adhesive tape for processing semiconductor wafers, the method comprising the step of irradiating a semiconductor wafer with a tape attached thereto with ultraviolet rays from the side of the ultraviolet curable surface protection tape.
<11>
The method of using the ultraviolet curing adhesive tape for processing semiconductor wafers according to <10>, wherein the ultraviolet irradiation is ultraviolet irradiation using an LED lamp with a wavelength of 365 nm as a light source.
<12>
The method for using the ultraviolet curable adhesive tape for processing semiconductor wafers according to <10> or <11>, which includes the step of peeling off the ultraviolet curable surface protection tape from the semiconductor wafer after irradiation with ultraviolet rays. .
<13>
The semiconductor according to <12>, which includes a step of irradiating ultraviolet rays from the side of the ultraviolet curable adhesive tape for processing semiconductor wafers after the step of peeling off the ultraviolet curable surface protection tape from the semiconductor wafer. How to use ultraviolet curing adhesive tape for wafer processing <14>
The ultraviolet curable adhesive tape for semiconductor wafer processing according to <13>, wherein the ultraviolet irradiation from the side of the ultraviolet curable adhesive tape for semiconductor wafer processing is ultraviolet irradiation using a high-pressure mercury lamp as a light source. how to use.
<15>
The ultraviolet curable surface protection tape is bonded to one side of the semiconductor wafer, and the ultraviolet ray for semiconductor wafer processing according to any one of <1> to <6> is applied to the other side of the semiconductor wafer. Use of the ultraviolet curable adhesive tape for semiconductor wafer processing according to any one of <10> to <14>, wherein the semiconductor wafer to which the curable adhesive tape is bonded is produced in a semiconductor wafer processing process. Method.

In the present invention, simply "(meth)acrylic" means either or both of acrylic and methacryl. Therefore, (meth)acrylic polymer refers to a polymer of one or more monomers having an acryloyl group, a polymer of one or more monomers having a methacryloyl group, and one type of monomer having an acryloyl group. Alternatively, it is meant to include a polymer of two or more types of monomers and one or more types of monomers having a methacryloyl group.
Furthermore, in the present invention, a numerical range expressed using "-" means a range that includes the numerical values written before and after "-" as lower and upper limits.

When the ultraviolet curable adhesive tape for processing semiconductor wafers of the present invention is used in the processing of semiconductor wafers, it can suppress the warping of thin film wafers caused by ultraviolet irradiation to the surface protection tape, and moreover, It is possible to achieve both suppression of chip flying and excellent subsequent pick-up performance. Furthermore, the semiconductor chip manufacturing method of the present invention can suppress warpage of the thin film wafer due to ultraviolet irradiation to the surface protection tape, and also achieves both suppression of chip flying during dicing and subsequent pick-up performance. be able to. Further, the method for using the ultraviolet curable adhesive tape for semiconductor wafer processing of the present invention is to cure the ultraviolet curable surface protective tape while suppressing a decrease in the adhesive strength of the ultraviolet curable adhesive tape for semiconductor wafer processing of the present invention. , the adhesive strength can be sufficiently reduced.

It is a schematic sectional view explaining the pasting process of the surface protection tape to a semiconductor wafer. In FIG. 1, FIG. 1(A) shows how a surface protection tape is bonded to the surface of a semiconductor wafer, and FIG. 1(B) shows a semiconductor wafer to which the surface protection tape is bonded. FIG. 3 is a schematic cross-sectional view illustrating the steps from thinning and fixing a semiconductor wafer. In Fig. 2, Fig. 2(A) shows the thinning process by grinding the backside of a semiconductor wafer, and Fig. 2(B) shows the ultraviolet curable adhesive tape for semiconductor wafer processing of the present invention applied to the thinned semiconductor wafer. The state of bonding is shown, and FIG. 2(C) shows a state in which the semiconductor wafer is fixed to a ring frame. FIG. 3 is a schematic cross-sectional view illustrating a process from irradiating the surface protection tape with ultraviolet rays by a first ultraviolet irradiation device using an LED lamp as a light source to peeling off the surface protection tape. In FIG. 3, Figure 3(A) shows a state in which a surface protection tape is pasted on the front surface of a semiconductor wafer, and an ultraviolet curing adhesive tape for semiconductor wafer processing of the present invention is pasted on the back surface of the semiconductor wafer. FIG. 3(B) shows how ultraviolet rays from an LED lamp are used as a light source are irradiated from the side to which the surface protection tape is pasted, and FIG. 3(C) shows how the surface protection tape is peeled off. FIG. 3 is a schematic cross-sectional view illustrating the steps from ultraviolet irradiation to the ultraviolet curable adhesive tape for semiconductor wafer processing of the present invention by a second ultraviolet irradiation device using a high-pressure mercury lamp as a light source and dicing. In Fig. 4, Fig. 4(A) shows the state after the surface protection tape is peeled off from the semiconductor wafer, and Fig. 4(B) shows the process of dividing into individual chips using a dicing blade. Figure 4(C) shows how ultraviolet rays are irradiated from the side to which the ultraviolet curable adhesive tape for semiconductor wafer processing of the present invention is laminated by a second ultraviolet irradiation device using a high-pressure mercury lamp as a light source. shows.

Embodiments of the present invention will be described in detail below.

[Ultraviolet curing adhesive tape for semiconductor wafer processing]
The ultraviolet curable adhesive tape for semiconductor wafer processing of the present invention (hereinafter also referred to as "the adhesive tape of the present invention") 2 comprises a base film 3 and an ultraviolet curable adhesive layer provided on the base film 3. 4. Furthermore, a release liner (also referred to as a separator) may be formed on the adhesive layer 4, if necessary. When using the adhesive tape 2 of the present invention, the release liner is peeled off to expose the adhesive layer 4 before use.

(Adhesive strength of adhesive tape of the present invention)
Adhesive tape 2 of the present invention is an adhesive tape whose adhesive force value, measured by a 90° peel test method for SUS304 (stainless steel) based on JIS Z 0237, satisfies both (1) and (2) below. .
(1) [Adhesive strength after UV irradiation with a cumulative light intensity of 500 mJ/cm ² by an UV irradiation device using an LED lamp with a wavelength of 365 nm as a light source] / [Adhesive strength before UV irradiation] (hereinafter referred to as "A _LED /A ₀ ") (also abbreviated as )≧0.50
(2) [Adhesive strength after UV irradiation with an integrated light intensity of 500 mJ/cm ² by an ultraviolet irradiation device using a high-pressure mercury lamp as a light source] / [Adhesive strength before UV irradiation] (hereinafter also abbreviated as "A _HPM / A ₀ ") )≦0.50
In the above, [adhesive strength before ultraviolet irradiation] means the adhesive strength in an unused state after producing the adhesive tape of the present invention. Note that for the adhesive tape of the present invention that has aged due to long-term storage, etc., it refers to the adhesive strength in a state where it is stored in a situation where UV curing does not occur due to light shielding or the like.
Furthermore, [adhesive strength after irradiation with ultraviolet rays] refers to the adhesive strength after irradiating the unused adhesive tape of the present invention with ultraviolet rays at a cumulative light intensity of 500 mJ/cm ² using an ultraviolet irradiation device using each light source lamp. means the adhesive strength of
The specific method for measuring the adhesive force is as described in the Examples section.

The above-mentioned [adhesive strength before ultraviolet irradiation] (A ₀ ) is preferably from 1 N/25 mm to 10 N/25 mm from the viewpoint that the adhesive tape of the present invention before ultraviolet irradiation has sufficient adhesion to a semiconductor wafer, More preferably, it is 1N/25mm to 5N/25mm.
A _LED /A ₀ in the above (1) is preferably 0.60 or more, more preferably 0.70 or more. The upper limit value of A _LED /A ₀ in (1) above is not particularly limited, but is preferably 1.30 or less, more preferably 1.20 or less, even more preferably 1.10 or less, and 1.00 or less. Particularly preferred.
A _HPM /A ₀ in the above (2) is preferably 0.40 or less, more preferably 0.30 or less, and even more preferably 0.20 or less. Note that the lower limit value of A _HPM /A ₀ in the above (2) is not particularly limited, but is preferably 0.05 or more, and more preferably 0.10 or more.
In addition, the adhesive force after irradiation with ultraviolet rays with an integrated amount of light of 500 mJ/cm ² using an ultraviolet irradiation device with a wavelength of 365 nm as a light source with respect to the adhesive strength after irradiation with an integrated amount of ultraviolet rays of 500 mJ/cm ² using an LED lamp with a wavelength of 365 nm as a light source. The ratio of "adhesive strength after ultraviolet irradiation" (hereinafter also abbreviated as "A _LED /A _HPM ") is preferably 0.2 to 200, more preferably 2.0 to 100.

The adhesive tape 2 of the present invention has an adhesive strength at a wavelength of 365 nm because both A _LED /A ₀ and A _HPM /A ₀ , which are the ratios of adhesive strength values before and after ultraviolet irradiation, satisfy the above (1) and (2). Ultraviolet irradiation using an LED lamp (also simply referred to as "LED lamp" in this specification) as a light source can suppress a decrease in adhesive strength, while ultraviolet irradiation using a high-pressure mercury lamp as a light source can sufficiently increase adhesive strength. can be lowered.
Therefore, when the adhesive tape 2 of the present invention is used as a dicing tape in the processing process of semiconductor wafers, the surface protection tape can be irradiated with ultraviolet rays by using an LED lamp as a light source for irradiating the surface protection tape with ultraviolet rays. In this case, it is possible to suppress a decrease in adhesive strength, and even if the ultraviolet rays from the LED lamp get around to the adhesive tape 2 (dicing tape) of the present invention, chip flying during dicing can be suppressed. Further, the adhesive tape 2 of the present invention can sufficiently reduce the adhesive force of the adhesive tape 2 of the present invention by ultraviolet irradiation using a high-pressure mercury lamp as a light source, and can exhibit excellent pick-up properties.

(Base film)
The base film 3 in the present invention is not particularly limited, and resins such as known plastics can be used. A thermoplastic plastic film is usually used as a base film constituting a tape for dicing semiconductor wafers (hereinafter referred to as "dicing tape").
Examples of the resin (material) constituting the base film 3 include polyolefins such as polyethylene, polypropylene, ethylene-propylene copolymer and polybutene, styrene-hydrogenated isoprene-styrene block copolymer, and styrene-isoprene-styrene copolymer. thermoplastic elastomers such as styrene-hydrogenated butadiene-styrene copolymers and styrene-hydrogenated isoprene/butadiene-styrene copolymers, ethylene-vinyl acetate copolymers, ethylene-(meth)acrylic acid copolymers, Ethylene copolymers such as ethylene-(meth)acrylic acid ester copolymers and ethylene-(meth)acrylic acid metal salt ionomers, engineering plastics such as polyethylene terephthalate, polybutylene terephthalate, polycarbonate and polymethyl methacrylate, and soft polyesters. Preferred are polymeric materials such as vinyl chloride, semi-rigid polyvinyl chloride, polyester, polyurethane, polyamide, polyimide, natural rubber and synthetic rubber.
In the above ethylene copolymer, one type of (meth)acrylic acid, (meth)acrylic acid ester, and (meth)acrylic acid metal salt, which are constituent units of the resin, may be contained in the ethylene copolymer. Two or more types may be included. Further, the metal salt in the ethylene-(meth)acrylic acid metal salt ionomer is preferably a divalent or higher metal salt, such as a metal salt of Zn ²⁺ .
As the resin constituting the base film 3, one or more types of resin can be used.
The base film 3 may have a single layer structure, or may have a multilayer structure in which two or more layers are laminated.
The resin constituting the base film 3 can be appropriately selected depending on its adhesiveness with the adhesive layer 4.

As the base film 3, a commercially available one may be used, or a film formed by a conventional method such as a casting method, a T-die method, an inflation method, or a calendar method may be used.
The thickness of the base film 3 is not particularly limited, and can be set to the thickness of the base film in a normal dicing tape. Usually, the thickness is preferably 30 to 200 μm, more preferably 50 to 150 μm.

The surface of the base film 3 in contact with the adhesive layer 4 may be subjected to any one of surface treatments such as corona treatment and primer treatment in order to improve adhesion.

<Adhesive layer>
The adhesive constituting the adhesive layer 4 is an ultraviolet curing adhesive (hereinafter simply referred to as "adhesive") that can satisfy the ratio of adhesive strength before and after ultraviolet irradiation specified in (1) and (2) above. ) is not particularly limited.
Specifically, the adhesive layer 4 containing the ultraviolet curable adhesive does not undergo much curing when irradiated with ultraviolet light using an LED lamp with a wavelength of 365 nm as a light source, and its adhesive strength is not easily reduced by this ultraviolet irradiation. . On the other hand, curing progresses by ultraviolet irradiation using a high-pressure mercury lamp as a light source, and the adhesive force can be sufficiently reduced, making it easier to peel off from the semiconductor wafer (semiconductor chip). That is, when a high-pressure mercury lamp is used as a light source, it is possible to irradiate light with a wide wavelength distribution including wavelengths such as 254 nm, 313 nm, 365 nm, 405 nm, and 436 nm, so when an LED lamp with a wavelength of 365 nm is used as a light source, In comparison, the curing reaction can be made more efficient. In the present invention, the adhesive layer 4 is an ultraviolet curing type layer whose curing reactivity differs depending on the wavelength range (wavelength distribution) of the ultraviolet rays to be irradiated.

As the polymer (also referred to herein as "base polymer") contained in the pressure-sensitive adhesive, (meth)acrylic polymer is preferable.
The content of the base polymer contained in the adhesive layer 4 is preferably 50 to 95% by mass, more preferably 70 to 95% by mass.

(UV curable adhesive)
As mentioned above, the ultraviolet curable adhesive may be an adhesive that has different curing reactivity depending on the wavelength range of the ultraviolet rays to be irradiated. Here, curing by ultraviolet irradiation using a high-pressure mercury lamp as a light source may be performed as long as it utilizes the property of forming a three-dimensional network, and can be broadly divided into 1) ultraviolet-polymerizable carbon-carbon double bonds ( 2) A pressure-sensitive adhesive containing a base polymer having an ethylenic double bond (ethylenic double bond); It is classified as an adhesive containing a low molecular weight compound (hereinafter referred to as an ultraviolet polymerizable low molecular weight compound) having a carbon double bond (ethylenic double bond).

When the adhesive tape 2 of the present invention contains a low molecular weight compound (with a molecular weight of about 1000 or less), if the period from when the adhesive tape is attached to a semiconductor wafer until when it is irradiated with ultraviolet rays or picked up is long, the low molecular weight compound may When the adhesive tape and semiconductor chip migrate to the interface between the adhesive tape and the semiconductor wafer or semiconductor chip, the adhesion increases, and a phenomenon may be observed in which the peeling between the adhesive tape and the semiconductor chip during pickup becomes more difficult. For this reason, the UV-curable adhesive is preferably an adhesive containing a base polymer having a UV-polymerizable carbon-carbon double bond (ethylenic double bond) in the side chain of 1) above. The pressure-sensitive adhesive of 1) may contain a low molecular weight compound, but it is more preferable that the content is such that the above-mentioned phenomenon that the peeling becomes difficult is not observed. Note that it is not limited to containing the photopolymerization initiator and curing agent described below.

(Adhesive consisting of a base polymer with UV-polymerizable carbon-carbon double bonds in the side chain)
When the adhesive constituting the adhesive layer 4 contains a base polymer having a UV-polymerizable carbon-carbon double bond in the side chain, the adhesive layer 4 contains a UV-polymerizable carbon-carbon double bond in the side chain. It is preferable to include a (meth)acrylic polymer having the following. The content of the (meth)acrylic polymer having UV-polymerizable carbon-carbon double bonds in the side chain in the adhesive layer 4 is preferably 50% by mass or more, more preferably 80% by mass or more.
The (meth)acrylic polymer may have a functional group such as an epoxy group or a carboxy group in addition to the UV-polymerizable carbon-carbon double bond (ethylenic double bond) in the side chain.

As the (meth)acrylic polymer having an ultraviolet-polymerizable carbon-carbon double bond in a side chain, a (meth)acrylic polymer in which at least one constituent unit of the polymer has an ethylenic carbon-carbon double bond is preferred. The above-mentioned (meth)acrylic polymer may be manufactured by any method, and can be manufactured by a conventional method. For example, a (meth)acrylic polymer having a functional group (α) in its side chain, and a UV-polymerizable carbon-carbon double bond such as a (meth)acryloyl group, and the side chain of this (meth)acrylic polymer Preferably, it is obtained by reacting a functional group (α) of the chain with a compound having a reactive functional group (β).
The group having a UV-polymerizable carbon-carbon double bond may be any group as long as it has a non-aromatic ethylenic double bond, including (meth)acryloyl group, (meth)acryloyloxy group, A (meth)acryloylamino group, an allyl group, a 1-propenyl group, and a vinyl group (including styrene or substituted styrene) are preferred, and a (meth)acryloyl group or a (meth)acryloyloxy group is more preferred.
Examples of the functional groups (α) and (β) include a carboxy group, a hydroxyl group, an amino group, a mercapto group, a cyclic acid anhydride group, an epoxy group, and an isocyanate group (-N=C=O).

Here, when one of the functional groups (α) and (β) is a carboxy group, hydroxyl group, amino group, mercapto group, or cyclic acid anhydride group, the other functional group is , an epoxy group, and an isocyanate group; when one functional group is a cyclic acid anhydride group, examples of the other functional group include a carboxyl group, a hydroxyl group, an amino group, and a mercapto group. In addition, when one functional group is an epoxy group, the other functional group may be an epoxy group.

As the functional group (α), a carboxy group or a hydroxyl group is preferable, and a hydroxyl group is particularly preferable.
A (meth)acrylic polymer having a functional group (α) in the side chain is a (meth)acrylic monomer having a functional group (α), preferably a (meth)acrylic ester [(especially, a functional group (α) in the alcohol moiety)] ] as a monomer component.
The (meth)acrylic polymer having a functional group (α) in the side chain is preferably a copolymer. In this case, the copolymerization component with the (meth)acrylic monomer having a functional group (α) in the side chain is a (meth)acrylic acid alkyl ester, especially a functional group (α) in the alcohol moiety or UV-polymerizable carbon-carbon Preferred are (meth)acrylic acid alkyl esters which are not substituted with a double bond-containing group.

Examples of the (meth)acrylic esters include methyl acrylate, ethyl acrylate, n-propyl acrylate, n-butyl acrylate, isobutyl acrylate, n-pentyl acrylate, n-hexyl acrylate, n-octyl acrylate, isooctyl acrylate, Examples include 2-ethylhexyl acrylate, dodecyl acrylate, decyl acrylate, hexyl acrylate, and their corresponding methacrylates.
(Meth)acrylic acid esters may be used alone or in combination of two or more types, but it is preferable to use a combination of those having 5 or less carbon atoms and those having 6 to 12 carbon atoms in the alcohol moiety.

Note that the glass transition point (Tg) becomes lower as the monomer having a larger number of carbon atoms in the alcohol moiety is used, so that a product having a desired glass transition point can be obtained. In addition to the glass transition point, it is also preferable to blend low-molecular compounds with carbon-carbon double bonds, such as vinyl acetate, styrene, and acrylonitrile, in order to improve compatibility and various performances. In this case, these monomer components The content of is preferably within the range of 5% by mass or less.

Examples of (meth)acrylic monomers having a functional group (α) include acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, and glycol monomers. Acrylates, glycol monomethacrylates, N-methylol acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkylaminoethyl acrylates, N-alkylaminoethyl methacrylates, acrylamides, methacrylamides, maleic anhydride, anhydride Itaconic acid, fumaric anhydride, phthalic anhydride, glycidyl acrylate, glycidyl methacrylate, allyl glycidyl ether, a monomer having a hydroxyl group or carboxy group and a UV-polymerizable carbon-carbon double bond as part of the isocyanate group of a polyisocyanate compound Examples include those made of urethane.

Among these, acrylic acid, methacrylic acid, 2-hydroxyalkyl acrylates, 2-hydroxyalkyl methacrylates, glycidyl acrylate or glycidyl methacrylate are preferred; 2-hydroxyalkyl acrylates or 2-hydroxyalkyl methacrylates are more preferred.

The functional group (β) in a compound having an ultraviolet-polymerizable carbon-carbon double bond and a functional group (β) is preferably an isocyanate group. Examples include meth)acrylic acid esters, and among them, (meth)acrylic acid alkyl esters substituted with isocyanate (-N=C=O) groups are preferred. Examples of such monomers include 2-isocyanatoethyl methacrylate and 2-isocyanatoethyl acrylate.
Further, preferable compounds when the functional group (β) is other than an isocyanate group include the compounds exemplified in the (meth)acrylic monomer having the functional group (α).

By reacting a compound having an ultraviolet ray polymerizable carbon-carbon double bond and a functional group (β) with a (meth)acrylic polymer having a functional group (α) in the side chain, the polymer has an ultraviolet ray polymerizable carbon-carbon Double bonds can be incorporated and an ultraviolet curable adhesive layer can be formed.

In the synthesis of (meth)acrylic polymers, ketone, ester, alcohol, and aromatic organic solvents can be used when the reaction is carried out by solution polymerization, among which toluene, ethyl acetate, Solvents that are generally good solvents for (meth)acrylic polymers, such as isopropyl alcohol, benzene methyl cellosolve, ethyl cellosolve, acetone, and methyl ethyl ketone, and have a boiling point of 60 to 120°C are preferred. As the polymerization initiator, radical generators such as azobis-based agents such as α,α'-azobisisobutyronitrile and organic peroxide-based agents such as benzoyl peroxide are usually used. At this time, a catalyst and a polymerization inhibitor can be used in combination as necessary, and a (meth)acrylic polymer having a desired molecular weight can be obtained by adjusting the polymerization temperature and polymerization time. Furthermore, in order to adjust the molecular weight, it is preferable to use a solvent such as mercaptan or carbon tetrachloride. Note that this reaction is not limited to solution polymerization, and other methods such as bulk polymerization and suspension polymerization may also be used.

The weight average molecular weight (Mw) of the base polymer (preferably a (meth)acrylic polymer) having a UV-polymerizable carbon-carbon double bond in its side chain is preferably about 200,000 to 1,000,000.
When the mass average molecular weight is 1 million or less, when irradiated with ultraviolet rays, the adhesive layer 4 does not become brittle and has flexibility even after irradiation with ultraviolet rays, so that it is difficult to leave adhesive residue on the semiconductor chip surface during peeling. In addition, if the mass average molecular weight is 200,000 or more, the cohesive force before ultraviolet irradiation is not too small and has sufficient adhesive strength, so it is possible to sufficiently hold semiconductor chips during dicing, and chip flying is less likely to occur. . Furthermore, the adhesive is sufficiently cured after irradiation with ultraviolet rays, and is less likely to leave adhesive residue on the semiconductor chip surface during peeling. The weight average molecular weight in the present invention is the weight average molecular weight in terms of polystyrene.

The amount of UV-polymerizable carbon-carbon double bonds introduced into the base polymer having UV-polymerizable carbon-carbon double bonds in the side chain is preferably 0.8 to 1.8 meq/g, and 0.8 to 1 .5 meq/g is more preferable. When the amount of ultraviolet-polymerizable carbon-carbon double bonds introduced is within the above range, the curing reaction will proceed sufficiently by ultraviolet irradiation using a high-pressure mercury lamp as a light source, and since it has sufficient fluidity, no adhesive residue will be left. reduced.

The glass transition point of the base polymer having a UV-polymerizable carbon-carbon double bond in its side chain is preferably -70 to -35°C, more preferably -70 to -40°C. When the glass transition point is above the above lower limit, the fluidity of the adhesive is not too high and adhesive residue can be suppressed, and when the glass transition point is below the above upper limit, it has sufficient fluidity to fit on the back side of the semiconductor wafer. However, also when expanding the adhesive tape of the present invention, peeling from the semiconductor wafer can be suppressed.
The glass transition temperature of the base polymer used for the adhesive layer 4 is a value measured by a differential scanning calorimeter (DSC) at a temperature increase rate of 0.1° C./min. Examples of the differential scanning calorimeter include DSC-60 (trade name) manufactured by Shimadzu Corporation. In the present invention, the glass transition temperature is the extrapolated glass transition start temperature of JIS K 7121 "Method for measuring transition temperature of plastics".

The acid value of the base polymer having a UV-polymerizable carbon-carbon double bond in the side chain [the number of mg of potassium hydroxide required to neutralize the free fatty acids present in 1 g of the base polymer] is 0.5 to 30 is preferable, and 1 to 20 is more preferable.
Hydroxyl value of base polymer having UV-polymerizable carbon-carbon double bond in side chain [number of mg of potassium hydroxide required to neutralize acetic acid bonded to hydroxyl group when 1 g of base polymer is acetylated] ] is preferably 5 to 100, more preferably 10 to 80.
By doing so, the effect of preventing adhesive residue when peeling off the adhesive tape of the present invention is further improved.

The acid value and hydroxyl value can be adjusted by using a (meth)acrylic polymer that has a functional group (α) in the side chain and a (meth)acrylic polymer that has an ultraviolet polymerizable carbon-carbon double bond. A desired product can be prepared by leaving unreacted functional groups in the step of reacting the side chain functional group (α) with a compound having a reactive functional group (β).

(hardening agent)
The pressure-sensitive adhesive containing a base polymer having an ultraviolet ray polymerizable carbon-carbon double bond in a side chain preferably contains a curing agent. The curing agent is used to adjust the adhesive force and cohesive force by reacting with the functional groups of the base polymer.
Preferable examples of the curing agent include polyisocyanates, melamine/formaldehyde resins, and epoxy resins. Among these, polyisocyanates are more preferred in the present invention.

There are no particular limitations on the polyisocyanates, such as 4,4'-diphenylmethane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4'-[2,2-bis(4 Aromatic isocyanates such as -phenoxyphenylpropane] diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethyl-hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate , lysine diisocyanate, lysine triisocyanate, and the like. Specifically, Coronate L (manufactured by Nippon Polyurethane Co., Ltd., trade name) or the like can be used.

As the melamine/formaldehyde resin, specifically, Nikalac MX-45 (manufactured by Sanwa Chemical Co., Ltd., trade name), Melan (manufactured by Hitachi Chemical Co., Ltd., trade name), etc. can be used.

As the epoxy resin, TETRAD-X (manufactured by Mitsubishi Chemical Corporation, trade name) or the like can be used.

After applying the adhesive, the base polymer forms a crosslinked structure using a curing agent, thereby improving the cohesive force of the adhesive.
The above curing agent has already reacted with the base polymer in the adhesive layer 4 of an unused adhesive tape. Note that in the present invention, the term "base polymer component" does not include a curing agent component. That is, in a state where the base polymer and the curing agent have reacted, the structural portion excluding the curing agent component is referred to as the base polymer component.
However, all of the curing agent contained in the adhesive layer 4 may be reacted, or a part thereof may be reacted.

In the adhesive layer 4, the content of the curing agent component is preferably 0.1 to 10 parts by weight, more preferably 1 to 10 parts by weight, based on 100 parts by weight of the base polymer component.
When the content of the curing agent component is at least the above lower limit, the effect of improving cohesive force is sufficient, and adhesive residue of the adhesive is suppressed. In addition, the adhesive layer and the surface of the adherend are less likely to shift, and peeling during expansion is suppressed. The blending amount of the curing agent is below the above upper limit. The curing reaction progresses without rapidly forming a crosslinked structure during the formulation and application of the adhesive, resulting in excellent workability. Moreover, the flexibility of the adhesive is not impaired, and peeling during expansion is suppressed.

In order to add cohesive force to the base polymer of the adhesive, a crosslinking agent can be blended in addition to the above-mentioned polyisocyanates, melamine/formaldehyde resin, and epoxy resin. Examples of the crosslinking agent include metal chelate crosslinking agents, aziridine crosslinking agents, and amine resins, depending on the base polymer. Furthermore, the adhesive can contain various additive components, if desired, within a range that does not impair the object of the present invention.

(Photopolymerization initiator)
When a base polymer having a UV-polymerizable carbon-carbon double bond in a side chain is cured by UV irradiation, it is preferable to incorporate a photopolymerization initiator into the adhesive.
The photopolymerization initiator is not particularly limited, and a wide variety of commonly used photopolymerization initiators can be used. For example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenylpropane, etc. can be used. .
In order to give the adhesive tape 2 of the present invention a reactivity difference in a predetermined wavelength range, the content of the photopolymerization initiator in the adhesive layer 4 is 0.1 to 100 parts by mass based on 100 parts by mass of the base polymer component. It is preferably 3.0 parts by weight, more preferably 0.1 to 1.5 parts by weight, and even more preferably 0.1 to 1.0 parts by weight. When the content of the photopolymerization initiator is below the above upper limit, there will be a difference between the curing reactivity due to ultraviolet irradiation using an LED lamp with a wavelength of 365 nm as a light source and the curing reactivity due to ultraviolet irradiation using a high-pressure mercury lamp as a light source. A desired difference can be created. When the content of the photopolymerization initiator is at least the above lower limit, the curing reaction will sufficiently proceed and be cured during irradiation with ultraviolet rays using a high-pressure mercury lamp as the light source, and the adhesive tape 2 of the present invention and the adherend will be hardened. The releasability can be further improved.

(Ultraviolet absorber)
An ultraviolet absorber may be added to the adhesive tape 2 of the present invention in order to increase absorption in a predetermined wavelength range and to control curing reactivity when using a predetermined light source.

The UV absorber preferably contains at least one UV absorber having a triazine skeleton, a benzophenone skeleton, a benzotriazole skeleton, or a benzoate skeleton.
Examples of the compound having the triazine skeleton include 2,4-bis[2-hydroxy-4-butoxyphenyl]-6-(2,4-dibutoxyphenyl)-1,3,5-triazine, 2,4- Bis(2,4-dimethylphenyl)-6-(2-hydroxy-4-n-octyloxyphenyl)-1,3,5-triazine, 2-(2,4-dihydroxyphenyl)-4,6-bis (2,4-dimethylphenyl)-1,3,5-triazine, 2-(2,4-dihydroxyphenyl)-4,6-diphenyl-1,3,5-triazine, 2-(2-hydroxy-4 -methoxyphenyl)-4,6-diphenyl-1,3,5-triazine.

Examples of the above-mentioned compounds having a benzophenone skeleton include 2,4-dihydroxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-n-octyl Examples include roxybenzophenone and 2,2',4,4'-tetrahydroxybenzophenone.

Examples of the compound having the benzotriazole skeleton include 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, 2-(2H-benzotriazol-2-yl)-4,6-bis( 1-Methyl-1-phenylethyl)phenol, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethyl butyl) phenol.

Examples of the compound having the benzoate skeleton include 2,4-di-t-butylphenyl-3,5-di-t-butyl-4-hydroxybenzoate, 2,4-di-t-butylphenyl-4'- Hydroxy-3',5'-di-t-butylbenzoate is mentioned.

The above-mentioned ultraviolet absorber may be a commercially available one. For example, all of them are trade names of the ADEKA STAB LA series (LA-24, LA-29, LA-31, LA-32) manufactured by ADEKA Co., Ltd. , LA-36, LA-F70, 1413), BASF TINUVIN P, TINUVIN 234, TINUVIN 326, TINUVIN 329, TINUVIN 213, TINUVIN 571, TINUVIN 1577ED, CHIMASSORB 81, TINUVIN 120, etc.

The UV absorbers may be used alone or in combination of two or more.
The amount of the ultraviolet absorber added can be adjusted depending on the curing reactivity in a desired wavelength range. For example, it is preferably 0.1 to 10.0 parts by weight, more preferably 0.1 to 5.0 parts by weight, and even more preferably 0.1 to 1.0 parts by weight based on 100 parts by weight of the base polymer.

The adhesive may contain a solvent from the viewpoint of coatability when the adhesive is coated on a release liner and from the viewpoint of preparing a homogeneous adhesive. The above-mentioned solvent is not particularly limited, and may include solvents commonly used in adhesives for semiconductor wafer processing tapes.

The thickness of the adhesive layer 4 is not particularly limited and may be set as appropriate, but in the present invention, it is preferably 5 to 30 μm.

In the adhesive tape 2 of the present invention, it is preferable to temporarily attach a release film to the upper surface of the adhesive layer 4 in order to protect the adhesive layer 4 before use.

<Manufacturing method>
In the present invention, the method of providing the base film 3 and the method of providing the adhesive layer 4 on the base film 3 are not particularly limited, and can be appropriately selected from known methods. An example is described below, but it is not limited to the following example.
An adhesive is applied onto the release liner to form an adhesive layer 4 having a desired thickness. The adhesive tape 2 of the present invention can be produced by bonding this adhesive layer 4 and the base film 3 (a film formed from a resin constituting the base film).
In addition, it is also preferable that the adhesive tape of the present invention is stored under light-shielding conditions after production.

<Application>
The adhesive tape 2 of the present invention can suppress a decrease in adhesive strength when irradiated with ultraviolet rays using an LED as a light source, and can sufficiently reduce its adhesive strength when irradiated with ultraviolet rays using a high-pressure mercury lamp as a light source.
Therefore, by using the adhesive tape 2 of the present invention as a dicing tape (fixing tape) in the manufacture of semiconductor chips, it is possible to suppress warping of thin film wafers due to ultraviolet irradiation to the surface protection tape, and moreover, during dicing. It is possible to achieve both suppression of chip flying and excellent subsequent pick-up performance.
Moreover, the adhesive tape of the present invention is prepared by laminating the adhesive tape 2 of the present invention and the ultraviolet curable surface protection tape on a semiconductor wafer, and curing the ultraviolet ray curable surface protection tape by UV irradiation using an LED lamp with a wavelength of 365 nm as a light source. It can be suitably used in the following usage methods. In this usage method, the ultraviolet curable surface protective tape can be cured and peeled from the semiconductor wafer while sufficiently suppressing a decrease in the adhesive strength of the adhesive tape 2 of the present invention.
In addition, the irradiation conditions of each ultraviolet ray can be adjusted as appropriate to obtain the desired adhesive strength.

[Method for manufacturing semiconductor chips]
The method of manufacturing a semiconductor chip of the present invention is a method of obtaining a semiconductor chip using the adhesive tape 2 of the present invention.
Preferably, an ultraviolet curable surface protection tape (hereinafter also simply referred to as "surface protection tape") is bonded to the patterned surface side of a semiconductor wafer having a patterned surface on its surface, and the patterned surface is protected in this state. The back surface of the semiconductor wafer is ground. Next, the adhesive tape 2 of the present invention is attached to the back surface of the semiconductor wafer, and is supported and fixed to a ring frame. Next, after irradiating ultraviolet rays from the surface protection tape side with a first ultraviolet irradiation device, the surface protection tape is peeled off to expose the patterned surface on the surface of the semiconductor wafer. Next, the semiconductor wafer is cut using a dicing device from the patterned side of the semiconductor wafer, and the semiconductor wafer is diced into individual chips (dicing) to obtain the desired semiconductor chips. The dicing method is not particularly limited, and any conventional method can be used. Among these, dicing using a dicing blade is preferred.
In the semiconductor chip manufacturing method of the present invention, it is preferable that the adhesiveness of the adhesive tape 2 is further reduced by irradiating ultraviolet rays from the second ultraviolet irradiation device from the side of the adhesive tape 2 of the present invention. Next, it is also preferable to have a step of picking up a semiconductor chip from the adhesive tape 2 of the present invention. Furthermore, the method may further include a step of transferring the picked-up semiconductor chip to a die bonding step.
The first ultraviolet irradiation device is preferably an ultraviolet irradiation device using an LED lamp with a wavelength of 365 nm as a light source, for example. Further, the second ultraviolet irradiation device is preferably an ultraviolet irradiation device using, for example, a high-pressure mercury lamp as a light source.
The conditions for the ultraviolet irradiation by the first ultraviolet irradiation device and the ultraviolet irradiation by the second ultraviolet irradiation device can be adjusted as appropriate according to the surface protection tape used and the curing reactivity of the adhesive tape 2 of the present invention to the light source. can. Irradiation conditions are not particularly limited, but for example, for ultraviolet irradiation using an LED lamp with a wavelength of 365 nm as a light source, it is preferable that the irradiation intensity is 30 mW/cm ² to 50 mW/cm ² and the cumulative light amount is 200 mJ/cm ² to 1000 mJ. The irradiation intensity is preferably 40 mW/cm ² to 80 mW/cm ² , and the cumulative amount of ultraviolet light (wavelength 250 nm to 450 nm) is preferably 40 mW/cm 2 to 80 mW/cm ^{2 .} The irradiation is preferably from 200 mJ/cm ² to 1000 mJ/cm ² .
Further, the type of the high-pressure mercury lamp is not particularly limited, and commonly used high-pressure mercury lamps can be used.

As the ultraviolet curable surface protection tape, an ultraviolet curable surface protection tape that is normally used to protect the patterned surface of a semiconductor wafer in a semiconductor chip manufacturing process can be used. Specifically, it is not particularly limited as long as it has at least a base film and an ultraviolet curing adhesive layer provided on the base film. Another preferred example is a form in which a film-like semiconductor encapsulant is provided as an NCF (non-conductive film) on the side opposite to the side on which the adhesive layer has the base film. When the surface protection tape has a film-like semiconductor encapsulant, peeling the surface protection tape from the semiconductor wafer means removing the base film and the adhesive while leaving the film-like semiconductor encapsulant on the semiconductor wafer. This means peeling off the agent layer as one piece.

A preferred embodiment of the semiconductor chip manufacturing method of the present invention (hereinafter also simply referred to as "the manufacturing method to which the present invention is applied") will be described below with reference to FIGS. 1 to 4. Note that the following embodiments are not limited to the following embodiments unless otherwise specified. In addition, the forms shown in each drawing are schematic sectional views to facilitate understanding of the present invention, and the size, thickness, or relative size of each member may be changed for convenience of explanation. However, it does not directly represent the actual relationship. In addition, matters other than those specified in the present invention are not limited to the external shapes and shapes shown in these drawings.

The semiconductor wafer 1 has a patterned surface on its surface S on which circuits of semiconductor elements and the like are formed (see FIG. 1A). The pattern surface is a surface on which a circuit of a semiconductor element or the like is formed, and has streets in a plan view. A surface protection tape 11 having an ultraviolet curable adhesive layer 13 provided on a base film 12 is laminated on the patterned surface side to obtain a semiconductor wafer 1 whose patterned surface is covered with the surface protection tape 11 (Fig. 1(B)). In FIG. 1(B), the base film 12 and the adhesive layer 13 are shown together as a surface protection tape 11. Note that the arrow DA in FIG. 1A indicates the direction in which the surface protection tape 11 is bonded to the semiconductor wafer 1.

Next, the back surface of the semiconductor wafer 1 is ground by a wafer grinder M1 to reduce the thickness of the semiconductor wafer 1 (see FIG. 2A). Thereafter, the adhesive tape 2 of the present invention is bonded to the back surface B of the semiconductor wafer 1B whose back surface has been ground (see Figure 2(B)), and the adhesive tape 2 of the present invention is supported and fixed to the ring frame F. (See Figure 2 (C) and Figure 3 (A)). Note that the arrow DB in FIG. 2(A) indicates the rotation direction of the grinding wheel in the wafer grinding apparatus M1, and the arrow DC in FIG. 2(B) indicates the adhesive of the present invention The direction in which the tape 2 is pasted is shown.

Next, from the pattern surface side of the semiconductor wafer 1B covered with the surface protection tape 11, ultraviolet rays (as shown in FIG. 3(B) (indicated by the arrow in the note) (see Figure 3(B)). After the adhesive layer 13 of the surface protection tape 11 is cured by this UV irradiation and its adhesive strength is reduced, the surface protection tape 11 is peeled off (see Figure 3(C)) to expose the semiconductor wafer surface. (See Figure 4(A)).

Next, the semiconductor wafer 1 is processed by a dicing blade D from the pattern side (front surface S side) to cut the wafer and divide it into individual chips 7 (see Fig. 4(B)). reference). Finally, the semiconductor wafer 1 is irradiated with ultraviolet rays (indicated by the arrow in Note 4(C)) from the back side B side of the semiconductor wafer 1 using a second ultraviolet irradiation device UVS2 using a high-pressure mercury lamp as a light source. (See (C)). By this UV irradiation, the adhesive layer 4 of the adhesive tape 2 of the present invention is cured and its adhesive strength is reduced. Thereafter, the chip 7 that has been separated into pieces is pushed up by a pin using a pick-up device, and is picked up by suction by a collet (not shown).

After UV irradiation using the second ultraviolet irradiation device UVS2 using a high-pressure mercury lamp as a light source, as shown in FIG. It is also preferable to provide a certain distance between the molded chips 7. In this case, a tape having expandability is used as the adhesive tape 2 of the present invention. Conditions such as the speed of expansion and the amount of expansion can be adjusted as appropriate; for example, an embodiment using an expander can be mentioned.

Each of the above-mentioned embodiments is an example of the present invention, and the present invention is not limited to these forms. Additions, deletions, changes, etc. of known processes to each process may be made within the scope of the spirit of the present invention. be.

[How to use the adhesive tape of the present invention]
A method of using the adhesive tape of the present invention is that an ultraviolet curable surface protection tape is pasted on one side (for example, a patterned side) of a semiconductor wafer 1, and the adhesive tape of the present invention is attached to the other side of the semiconductor wafer 1. The method includes a step of irradiating ultraviolet rays from the surface protection tape 11 side to the semiconductor wafer to which is pasted.
This ultraviolet irradiation cures the surface protection tape 11 (preferably the adhesive layer of the surface protection tape) and reduces its adhesive strength. The above-mentioned ultraviolet irradiation is preferably carried out using an LED lamp with a wavelength of 365 nm as a light source.

The method for using the adhesive tape 2 of the present invention preferably includes a step of peeling the surface protection tape 11 from the semiconductor wafer after the ultraviolet irradiation, and further, after the step of peeling off the surface protection tape 11, the method of the present invention It is more preferable to include a step of irradiating ultraviolet rays from the adhesive tape 2 side.
By this ultraviolet irradiation, the adhesive layer in the adhesive tape 2 of the present invention is cured and its adhesive strength is reduced. The above-mentioned ultraviolet irradiation is preferably carried out using a high-pressure mercury lamp as a light source.

The conditions for each of the above-mentioned ultraviolet irradiation can be appropriately adjusted according to the reactivity of the surface protection tape 11 and the adhesive tape 2 of the present invention to the light source within a range that does not impair the effects of the present invention. Although the irradiation conditions are not particularly limited, for example, the description of the ultraviolet irradiation conditions in the method for manufacturing the semiconductor chip 1 of the present invention described above can be preferably applied.

The method of using the adhesive tape of the present invention can be preferably applied to the method of manufacturing the semiconductor chip 1 described above. Further, the method of using the adhesive tape 2 of the present invention is to use TSV (Through Silicon Via) using a surface protection tape integrated with a film-like semiconductor encapsulant (hereinafter also referred to as "integrated surface protection tape"). It can also be suitably used in the process of processing the middle layer of a Silicon Via wafer.
Specifically, the process of processing the middle layer of the TSV wafer includes the following steps. First, vias are formed with support glass bonded to one side of the wafer. Next, back grinding (BG grinding) is performed on the wafer surface on the opposite side (opposite side) to the surface to which the support glass is attached, and bumps are formed on the ground surface. Subsequently, after pasting a dicing tape on the bump formation surface, the support glass is removed. Subsequently, a surface protection tape integrated with a film-like semiconductor encapsulant is applied to the surface from which the support glass has been removed. Thereafter, ultraviolet rays are irradiated from the integrated surface protection tape side, and the surface protection tape is peeled off, leaving only the film-like semiconductor encapsulant on the wafer.
In the above processing step, a dicing tape and an integrated surface protection tape are attached to both sides of the wafer. For this reason, when the integrated surface protection tape is irradiated with UV rays, some surfaces of the dicing tape are also irradiated with UV rays, and when a normal UV curable tape is used as the dicing tape, the wafer edge The inventors of the present invention have discovered through studies that the adhesive force near the parts is reduced, and there is a risk of chip flying during dicing. On the other hand, by using the adhesive tape 2 of the present invention as a dicing tape, it is possible to suppress the decrease in adhesive strength due to ultraviolet irradiation on the integrated surface protection tape, and it is possible to suppress the occurrence of chip flying during dicing. .

That is, the above-mentioned "semiconductor wafer having an ultraviolet curable surface protection tape pasted on one side of the semiconductor wafer and the adhesive tape of the present invention pasted on the other side of the semiconductor wafer" is a semiconductor wafer. It is preferable that it occurs during the processing step.

EXAMPLES Hereinafter, the present invention will be explained in more detail based on Examples, but the present invention is not limited thereto.

<Example 1>
(1) Preparation of base film Hymilan AM-7316 (trade name, manufactured by DuPont Mitsui Chemicals), which is an ethylene-methacrylic acid-(2-methyl-propyl acrylate) ternary copolymer-Zn ²⁺ -ionomer resin A base film 3 having a thickness of 80 μm was prepared using the following. Note that one side of this film was subjected to corona treatment.

(2) Preparation of Adhesive The following adhesive was used, which has an ultraviolet curable acrylic polymer having an ultraviolet curable carbon-carbon double bond in the side chain as a base polymer.
(Synthesis of (meth)acrylic copolymer A)
A polymer solution of a (meth)acrylic copolymer was obtained by blending 70 mol% of 2-ethylhexyl acrylate, 20 mol% of 2-hydroxyethyl acrylate, and 10 mol% of methyl methacrylate in the stated molar ratio and copolymerizing in an ethyl acetate solution. Ta. To this polymer solution, 10 parts by mass of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko K.K., Karenz MOI (trade name)) was added to 100 parts by mass of the (meth)acrylic copolymer and reacted. A composition of (meth)acrylic copolymer A having a double bond-containing group in the side chain by adding a double bond-containing group derived from the isocyanate to the hydroxyl group in the side chain of the meth)acrylic copolymer. I got it.
Acrylic copolymer A having a double bond-containing group in the side chain had a mass average molecular weight of 600,000, a glass transition temperature (Tg) of -64°C, and an ultraviolet curable carbon-carbon double bond content of 0.9 meq/g. Ta.
(Preparation of adhesive)
Coronate L [manufactured by Nippon Polyurethane Industries Co., Ltd., trade name, Adhesive A was obtained by blending 2.0 parts by mass of [isocyanate curing agent] and 0.1 parts by mass of Irgacure 184 (trade name, manufactured by BASF) as a photopolymerization initiator.

(3) Preparation of Adhesive Tape The above-mentioned adhesive A was applied onto a release liner so that the thickness after drying was 10 μm to form an adhesive layer 4. The formed adhesive layer 4 is pasted on the corona-treated surface side of the base film 3 with a thickness of 80 μm prepared above to obtain an ultraviolet curing adhesive tape (adhesive tape) 2 for semiconductor wafer processing with a total thickness of 90 μm. was created.

<Example 2>
In the adhesive A used in Example 1, the amount of Irgacure 184 (manufactured by BASF), which is a photopolymerization initiator, was changed from 0.1 part by mass to 0.75 part by mass to obtain adhesive B. Adhesive tape 2 was produced in the same manner as in Example 1, except that adhesive B was used instead of adhesive A.

<Example 3>
In the adhesive A used in Example 1, the amount of Irgacure 184 (manufactured by BASF), which is a photopolymerization initiator, was changed from 0.1 parts by mass to 1.0 parts by mass to obtain adhesive C. Adhesive tape 2 was produced in the same manner as in Example 1, except that adhesive C was used instead of adhesive A.

<Example 4>
In the adhesive A used in Example 1, the amount of Irgacure 184 (manufactured by BASF) as a photopolymerization initiator was changed from 0.1 part by mass to 0.5 part by mass, and LA-F70 was added as an ultraviolet absorber. (trade name, manufactured by ADEKA Co., Ltd.) was blended in an amount of 0.3 parts by mass to obtain adhesive D. Adhesive tape 2 was produced in the same manner as in Example 1, except that adhesive D was used instead of adhesive A.

<Example 5>
In the adhesive A used in Example 1, the photopolymerization initiator Irgacure 184 (manufactured by BASF) was changed to the photopolymerization initiator Irgacure 651 (manufactured by BASF, trade name), and the blending amount was 0. Adhesive E was obtained by changing the amount from 1 part by mass to 0.3 parts by mass, and adding 0.3 parts by mass of LA-F70 (manufactured by ADEKA Corporation) as an ultraviolet absorber. Adhesive tape 2 was produced in the same manner as in Example 1, except that adhesive E was used instead of adhesive A.

<Comparative example 1>
In the adhesive A used in Example 1, the amount of Irgacure 184 (manufactured by BASF), which is a photopolymerization initiator, was changed from 0.1 parts by mass to 5.0 parts by mass to obtain adhesive F. An adhesive tape was produced in the same manner as in Example 1, except that adhesive F was used instead of adhesive A.

<Comparative example 2>
In the adhesive A used in Example 1, the photopolymerization initiator Irgacure 184 (manufactured by BASF) was changed to the photopolymerization initiator Irgacure 651 (manufactured by BASF), and the blending amount was 0.1 part by mass. Adhesive G was obtained by changing the amount from 1 to 4.0 parts by mass. An adhesive tape was produced in the same manner as in Example 1, except that adhesive G was used instead of adhesive A.

<Comparative example 3>
In the adhesive A used in Example 1, the photopolymerization initiator Irgacure 184 (manufactured by BASF) was changed to the photopolymerization initiator Irgacure 651 (manufactured by BASF), and the blending amount was 0.1 part by mass. to 3.1 parts by mass, and 0.1 parts by mass of LA-F70 (manufactured by ADEKA Co., Ltd.) as an ultraviolet absorber was added to obtain adhesive H. An adhesive tape was produced in the same manner as in Example 1, except that adhesive H was used instead of adhesive A.

<Characteristics and performance evaluation>
The adhesive strength of the adhesive tape produced above was measured as in Test Example 1. Further, chip flying during dicing was evaluated as in Test Example 2, and pick-up performance after chip separation was evaluated as in Test Example 3.

[Test Example 1] Measurement of Adhesive Strength The adhesive strength in the present invention is a value measured by a 90° peel adhesion test method on a stainless steel test plate based on JIS Z 0237. The specific measurement method is as follows. Note that conditions not described below are based on JIS Z 0237.
First, three test pieces with a width of 25 mm and a length of 150 mm were taken from the adhesive tape. These test pieces were pasted onto a SUS304 steel plate (stainless steel test plate) with a thickness of 1.5 mm to 2.0 mm as specified in JIS G 4305 and finished with No. 280 water-resistant abrasive paper specified in JIS R 6253. did. Thereafter, a 2 kg rubber roller was used to press the film back and forth three times, and the film was left to stand for 1 hour. Thereafter, the adhesive force was measured using a tensile tester conforming to JIS B 7721, in which the measured value falls within the range of 15 to 85% of the capacity. The measurement was carried out by a 90° peeling method at a tensile speed of 50 mm/min, a measurement temperature of 23° C., and a relative humidity of 49%. The adhesive strength in the present invention is the arithmetic mean of the adhesive strengths of three test pieces measured by the above method.

(Test Example 1-1) Adhesive strength before UV irradiation For the adhesive tape produced above, the adhesive strength (A ₀ ) before UV irradiation was measured by the above method.

(Test Example 1-2) Adhesion after UV irradiation using an LED lamp with a wavelength of 365 nm as a light source The adhesive tape produced above was coated with an ultraviolet irradiation device (manufactured by ITEC System Co., Ltd.) using an LED lamp with a wavelength of 365 nm as a light source. Irradiation was performed using a product (trade name: MUVBA-0.4×0.6×0.2, peak wavelength 365 nm) at an irradiation intensity of 30 mW/cm ² and an integrated light amount of 500 mJ/cm ² .
After irradiation with ultraviolet rays, the adhesive tape was left for one hour, and the adhesive strength (A _LED ) after irradiation with ultraviolet rays was measured using the above method using an LED lamp with a wavelength of 365 nm as a light source.

(Test Example 1-3) Adhesive strength after ultraviolet irradiation using a high-pressure mercury lamp as a light source The adhesive tape prepared above was coated with an ultraviolet irradiation device (manufactured by Technovision, product name: UVC) using a high-pressure mercury lamp as a light source. -408) at an irradiation intensity of 70 mW/cm ² so that the cumulative amount of ultraviolet light (wavelength 250 nm to 450 nm) was 500 mJ/cm ² .
After irradiation with ultraviolet rays, the adhesive tape was left for one hour, and the adhesive strength (A _HPM ) after irradiation with ultraviolet rays was measured using the above method using a high-pressure mercury lamp as a light source.

[Test Example 2] Chip flying during dicing The adhesive tape prepared above was attached to an 8-inch mirror wafer having a thickness of 150 μm and #2000 finish under conditions of 23° C. and 50% RH. One hour after the tape attachment, ultraviolet rays were irradiated under the same conditions as Test Example 1-2. After being irradiated with ultraviolet rays and left for 1 hour, it was cut into 1238 chips of 5 mm x 5 mm square under the following dicing conditions.
<Dicing conditions>
Dicing device: DFD-6340 (product name) manufactured by DISCO
Blade: NBC-ZH2050 27HEDD (product name) manufactured by DISCO
Blade rotation speed: 40,000 rpm
Cutting speed: 80mm/sec
Depth of cut into tape: 0.07mm
Cutting line: 41 cutting lines lengthwise and horizontally with a length of 205 mm Cutting water flow rate: 2L/min
Cutting water temperature: 23℃
The chips separated into pieces by the above-mentioned dicing were visually observed, and evaluated as "○" if there was no scattering of the separated chips at all, and as "x" if there were scattering of chips.

[Test Example 3] Pick-up Property After dicing in Test Example 2, ultraviolet rays were irradiated from the adhesive tape side under the same conditions as Test Example 1-3. Thereafter, the diced chips were picked up under the following pickup conditions.
<Pickup conditions>
Pickup device: CAP-300II (product name) manufactured by Canon Machinery
Push-up pin shape: radius 0.7 mm, tip curvature radius R = 0.25 mm, tip angle 15°
Pin push-up height: 1mm
Pin thrust speed: 50mm/sec
Collet shape: suction hole 0.89mmφ
Ring frame: Model DTF-2-6-1 (product name) manufactured by DISCO, made of SUS420J2 Pick up 1238 chips that have been separated into pieces under the above conditions, and mark "〇" if all chips can be peeled off. A sample that could not be peeled off and 1 to 25 chips remained on the adhesive tape was evaluated as "△", and a sample that could not be peeled off and 26 or more chips remained on the adhesive tape was evaluated as "x". In this test, "△" or "○" is the passing level.
In addition, when scattering of chips was observed in Test Example 2, the pick-up performance was evaluated for the chips remaining on the tape without scattering.

The results of each of the above test examples are summarized in the table below.
In addition, the unit of each adhesive force in the table is "N/25mm".

From the results in Table 1, the following can be seen.
The adhesive tapes of Examples 1 to 5 were exposed to ultraviolet rays at a cumulative light intensity of 500 mJ/cm ² from an ultraviolet irradiation device using an LED lamp with a wavelength of 365 nm as a light source with respect to (1) Adhesive strength before ultraviolet irradiation as defined in the present invention. The ratio (A _LED /A ₀ ) of the adhesive strength after irradiation is 0.50 or more, and (2) the ratio of the adhesive strength before UV irradiation to the adhesive strength before UV irradiation by an ultraviolet irradiation device using a high-pressure mercury lamp as a light source The ratio (A _HPM /A ₀ ) of the adhesive force after irradiation with ultraviolet rays with an integrated light amount of 500 mJ/cm ² has a value of 0.50 or less.
When the ultraviolet irradiation type adhesive tapes of Examples 1 to 5 are bonded to one side of a semiconductor wafer and used, even when dicing is performed after irradiation with ultraviolet light using an LED lamp with a wavelength of 365 nm as a light source, dicing does not occur. It was found that it is possible to suppress chip flying during time. Furthermore, it has been found that after the above dicing, the chips can be successfully peeled off from the ultraviolet irradiation adhesive tape by irradiating the chips with ultraviolet rays using a high-pressure mercury lamp as a light source and then picking them up. In other words, it was found that the ultraviolet irradiation type adhesive tapes of Examples 1 to 5 were excellent in both suppression of chip flying and pick-up properties.
Regarding Examples 1 to 5 ^, the ratio (A _HPM / When the adhesive tape of Example 5 with A ₀ ) of 0.43 was used, 12 chips remained on the adhesive tape during the pick-up process, whereas the above ratio (A _HPM /A ₀ ) was 0.43. It was found that when the adhesive tapes of Examples 1 to 4 having a particle diameter of 40 or less were used, not a single chip remained on the adhesive tape during the pick-up process, and the pick-up properties were more excellent.

On the other hand, although the adhesive tape of Comparative Example 1 satisfies (2) stipulated in the present invention, it does not satisfy the requirement (2) defined in the present invention, but it does The ratio (A _LED /A ₀ ) of the adhesive force after irradiation with ultraviolet rays of 500 mJ/cm ² was 0.10, which did not satisfy the requirement of 0.50 or more as defined in the present invention. In the adhesive tape of Comparative Example 1, scattering of chips was observed due to dicing after irradiation with ultraviolet light using an LED lamp with a wavelength of 365 nm as a light source, and chip scattering was not sufficiently suppressed.
Although the adhesive tape of Comparative Example 2 satisfies (2) stipulated in the present invention, the adhesive strength before ultraviolet irradiation was ⁵⁰⁰ mJ/cm The ratio (A _LED /A ₀ ) of adhesive force after irradiation with ultraviolet rays was 0.33, which did not satisfy the requirement of 0.50 or more as defined in the present invention. In the adhesive tape of Comparative Example 2, scattering of chips was observed due to dicing after irradiation with ultraviolet light using an LED lamp with a wavelength of 365 nm as a light source, and chip scattering was not sufficiently suppressed. Note that during the pick-up process, four chips remained on the adhesive tape.
Although the adhesive tape of Comparative Example 3 satisfies (1) stipulated in the present invention, the cumulative light amount of the ultraviolet irradiation device using a high-pressure mercury lamp as the light source with respect to (2) [adhesive strength before ultraviolet irradiation] is 500 mJ/cm ² The ratio (A _HPM /A ₀ ) of the adhesion force after irradiation with ultraviolet rays was 0.57, which did not satisfy the requirement of 0.50 or less as defined in the present invention. The adhesive tape of Comparative Example 3 was diced after being irradiated with ultraviolet light using an LED lamp as a light source, then irradiated with ultraviolet light using a high-pressure mercury lamp as a light source, and when picked up, all 1238 chips were removed. remained on the adhesive tape, resulting in insufficient pick-up properties.

As mentioned above, the adhesive tape of the present invention can be suitably used for processing semiconductor wafers. Further, the adhesive tape of the present invention may be used by laminating the adhesive tape of the present invention and the UV-curable surface protective tape on a semiconductor wafer, respectively, and curing the UV-curable surface protective tape with ultraviolet light using an LED lamp with a wavelength of 365 nm as a light source. With this method, the ultraviolet curable surface protection tape can be peeled off while suppressing a decrease in the adhesive strength of the adhesive tape of the present invention.
Moreover, by using the adhesive tape of the present invention, semiconductor chips can be manufactured while suppressing chip flying while achieving both excellent pick-up properties.

Although the invention has been described in conjunction with embodiments thereof, we do not intend to limit our invention in any detail in the description unless otherwise specified and contrary to the spirit and scope of the invention as set forth in the appended claims. I believe that it should be interpreted broadly without any restrictions.

This application claims priority based on Japanese Patent Application No. 2019-011418 filed in Japan on January 25, 2019, the contents of which are incorporated herein by reference. Incorporate it as part of.

1 Semiconductor wafer 1A Semiconductor wafer whose back side is being ground 1B Semiconductor wafer with its back side ground 1C Semiconductor wafer divided 2 Ultraviolet curing adhesive tape for semiconductor wafer processing (adhesive tape)
3 Base film 4 Adhesive layer 7 Chip 11 Surface protection tape 12 Base film 13 Adhesive layer S Front side B Back side M1 Wafer grinding device D Dicing blade F Ring frame UVS1 Ultraviolet irradiation device UVS2 using an LED lamp with a wavelength of 365 nm as a light source Ultraviolet irradiation equipment using a high-pressure mercury lamp as a light source

Claims (15)

An ultraviolet curable adhesive tape for semiconductor wafer processing, comprising at least a base film and an ultraviolet curable adhesive layer provided on the base film,
Ultraviolet curing for semiconductor wafer processing, characterized in that the adhesive strength of the adhesive tape measured by a 90° peel test method for SUS304 based on JIS Z 0237 satisfies both (1) and (2) below. molded adhesive tape.
(1) [Adhesive strength after UV irradiation with an integrated light amount of 500 mJ/cm ² by a UV irradiation device using an LED lamp with a wavelength of 365 nm as a light source] / [Adhesive strength before UV irradiation] ≧ 0.50
(2) [Adhesive strength after UV irradiation with an integrated light amount of 500 mJ/cm ² by an ultraviolet irradiation device using a high-pressure mercury lamp as a light source] / [Adhesive strength before UV irradiation] ≦0.50 The ultraviolet curable adhesive tape for processing semiconductor wafers according to claim 1, wherein the [adhesive strength before irradiation with ultraviolet rays] is 1 N/25 mm to 10 N/25 mm. The adhesive layer contains a base polymer component and a photopolymerization initiator, and the content of the photopolymerization initiator is 0.1 to 3.0 parts by mass based on 100 parts by mass of the base polymer component. The ultraviolet curable adhesive tape for processing semiconductor wafers according to claim 1 or 2. 4. The ultraviolet curable adhesive tape for processing semiconductor wafers according to claim 3 , wherein the base polymer component is a polymer having an ultraviolet polymerizable carbon-carbon double bond in a side chain. The ultraviolet curing adhesive tape for semiconductor wafer processing according to any one of claims 1 to 4, wherein the adhesive layer contains an ultraviolet absorber. The ultraviolet curing adhesive tape for processing semiconductor wafers according to any one of claims 1 to 5, which is used in a process of dicing semiconductor wafers. A method for manufacturing a semiconductor chip, comprising the following steps (a) to (e).
[Process]
(a) a step of grinding the back side of the semiconductor wafer with an ultraviolet curable surface protection tape attached to the pattern side of the semiconductor wafer having a patterned side on the front side;
(b) a step of laminating the ultraviolet curing adhesive tape for semiconductor wafer processing according to any one of claims 1 to 6 on the back surface of the ground semiconductor wafer and supporting and fixing it to a ring frame;
(c) a step of irradiating ultraviolet rays from the surface protection tape side with a first ultraviolet irradiation device and then peeling off the surface protection tape;
(d) a step of cutting the semiconductor wafer from the pattern side of the semiconductor wafer using a dicing device to separate it into individual chips;
(e) A step of irradiating ultraviolet rays from the adhesive tape side using a second ultraviolet irradiation device. 8. The method of manufacturing a semiconductor chip according to claim 7, wherein the first ultraviolet irradiation device is an ultraviolet irradiation device using an LED lamp with a wavelength of 365 nm as a light source. 9. The method for manufacturing a semiconductor chip according to claim 7, wherein the second ultraviolet irradiation device is an ultraviolet irradiation device using a high-pressure mercury lamp as a light source. An ultraviolet curable surface protection tape is bonded to one side of a semiconductor wafer, and an ultraviolet curable adhesive tape for semiconductor wafer processing according to any one of claims 1 to 6 is attached to the other side of the semiconductor wafer. A method of using an ultraviolet curable pressure-sensitive adhesive tape for processing semiconductor wafers, the method comprising the step of irradiating the bonded semiconductor wafers with ultraviolet rays from the side of the ultraviolet curable surface protection tape. 11. The method of using an ultraviolet curable adhesive tape for semiconductor wafer processing according to claim 10, wherein the ultraviolet irradiation is an ultraviolet irradiation using an LED lamp having a wavelength of 365 nm as a light source. 12. The method of using an ultraviolet curable adhesive tape for semiconductor wafer processing according to claim 10 or 11, comprising the step of peeling off the ultraviolet curable surface protection tape from the semiconductor wafer after the ultraviolet irradiation. 13. The semiconductor according to claim 12, further comprising a step of irradiating ultraviolet rays from the side of the ultraviolet curable adhesive tape for processing semiconductor wafers after the step of peeling off the ultraviolet curable surface protection tape from the semiconductor wafer. How to use UV-curable adhesive tape for wafer processing. 14. The ultraviolet curable adhesive tape for semiconductor wafer processing according to claim 13, wherein the ultraviolet irradiation from the side of the ultraviolet curable adhesive tape for semiconductor wafer processing is ultraviolet irradiation using a high-pressure mercury lamp as a light source. how to use. An ultraviolet curable surface protection tape is bonded to one surface of the semiconductor wafer, and the ultraviolet curable surface protection tape for semiconductor wafer processing according to any one of claims 1 to 6 is bonded to the other surface of the semiconductor wafer. The method for using an ultraviolet curable adhesive tape for semiconductor wafer processing according to any one of claims 10 to 14, wherein the semiconductor wafer to which the adhesive tape is bonded is produced in a semiconductor wafer processing step.

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