JP7441283B2 - 温度偏差特性が改善された基板加熱装置 - Google Patents
温度偏差特性が改善された基板加熱装置 Download PDFInfo
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- JP7441283B2 JP7441283B2 JP2022134911A JP2022134911A JP7441283B2 JP 7441283 B2 JP7441283 B2 JP 7441283B2 JP 2022134911 A JP2022134911 A JP 2022134911A JP 2022134911 A JP2022134911 A JP 2022134911A JP 7441283 B2 JP7441283 B2 JP 7441283B2
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- 238000010438 heat treatment Methods 0.000 title claims description 395
- 239000000758 substrate Substances 0.000 title claims description 186
- 238000000034 method Methods 0.000 claims description 70
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 41
- 229910052750 molybdenum Inorganic materials 0.000 claims description 41
- 239000011733 molybdenum Substances 0.000 claims description 41
- 229910001080 W alloy Inorganic materials 0.000 claims description 38
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 33
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 33
- 229910052721 tungsten Inorganic materials 0.000 claims description 33
- 239000010937 tungsten Substances 0.000 claims description 33
- 238000000137 annealing Methods 0.000 claims description 24
- 238000001953 recrystallisation Methods 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 description 26
- 230000020169 heat generation Effects 0.000 description 25
- 230000035882 stress Effects 0.000 description 17
- 238000005245 sintering Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910010293 ceramic material Inorganic materials 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000007769 metal material Substances 0.000 description 10
- 230000008646 thermal stress Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000013021 overheating Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004904 shortening Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910034327 TiC Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Resistance Heating (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
Description
32 プラズマ電極
33 シャワーヘッド
100a 支持部
100b 電源供給部
100c 接地部
110 ボディー部
120 基板安着部
130 発熱部
140 高周波電極部
300 基板加熱装置
310 第1発熱体
320 第2発熱体
330 第3発熱体
340 連結部材
S 基板
Claims (15)
- 基板を加熱する基板加熱装置であって、
基板が安着する基板安着部を備えて前記基板を支持するボディー部;
前記ボディー部の内部領域に位置する第1発熱体;
前記内部領域を囲む外部領域に位置する第2発熱体;
前記ボディー部の内部領域を横切って前記第2発熱体に電流を伝達する第3発熱体;及び
前記第2発熱体と前記第3発熱体とを電気的に連結する連結部材;を含み、
前記連結部材は、モリブデンとタングステンが含まれるモリブデン-タングステン合金で構成され、
前記連結部材は焼鈍(annealing)工程を経たものであり、前記焼鈍工程はモリブデンの再結晶温度とタングステンの再結晶温度との範囲内でなされ、前記焼鈍工程には前記モリブデンにシグマ相(sigma phase)が生成される温度区間での急速冷却工程が含まれることを特徴とする、基板加熱装置。 - 前記連結部材は、
球形(spherical)立体形状を有すると共に、前記連結部材の中心点から下方に所定の距離だけ離隔する第1平面の下部は除去された形状で具現され、
前記第1平面が前記基板安着部と平行に配置される構造をなすことを特徴とする、請求項1に記載の基板加熱装置。 - 前記連結部材は、
球形(spherical)立体形状が上下方向に短縮された楕円形(elliptical)立体形状で具現され、
前記楕円形立体形状において前記上下方向の軸(axis)が前記基板安着部と垂直に配置される構造をなすことを特徴とする、請求項1に記載の基板加熱装置。 - 前記連結部材は、
円筒形(cylindrical)立体形状で具現され、
前記円筒形立体形状の長さ方向の軸が前記基板安着部と垂直に配置される構造をなし、
前記第2発熱体と前記第3発熱体が挿入されて固定される各開口が、前記長さ方向の軸と垂直な方向に円筒形立体形状の側部に上下に備えられることを特徴とする、請求項1に記載の基板加熱装置。 - 連結部材は、
円筒形(cylindrical)立体形状で具現され、
前記円筒形立体形状の長さ方向の軸が前記基板安着部と平行に配置される構造をなし、
前記第2発熱体と前記第3発熱体が挿入されて固定される各開口が、前記円筒形立体形状の両側平面に対向して備えられることを特徴とする、請求項1に記載の基板加熱装置。 - 前記モリブデン-タングステン合金中にモリブデンは40~80%、タングステンは20~60%の割合で構成されることを特徴とする、請求項1に記載の基板加熱装置。
- 前記第1発熱体の終端に連結され、電源供給部から供給される電源を伝達する発熱体コネクター;がさらに含まれ、
前記発熱体コネクターは、モリブデンとタングステンが含まれるモリブデン-タングステン合金で構成されることを特徴とする、請求項1に記載の基板加熱装置。 - 前記発熱体コネクターは、焼鈍(annealing)工程を含む熱処理工程を経ることを特徴とする、請求項7に記載の基板加熱装置。
- プラズマを生成するために高周波が印加される高周波電極部;及び
前記高周波電極部の終端に連結され、高周波供給部から供給される高周波を伝達する高周波コネクター;がさらに含まれ、
前記高周波電極部又は前記高周波コネクターのうち一つ以上は、モリブデンとタングステンが含まれるモリブデン-タングステン合金で構成されることを特徴とする、請求項1に記載の基板加熱装置。 - 前記高周波電極部又は前記高周波コネクターのうち一つ以上は、焼鈍(annealing)工程を含む熱処理工程を経ることを特徴とする、請求項9に記載の基板加熱装置。
- 前記第1発熱体、前記第2発熱体又は前記第3発熱体のうち一つ以上は、モリブデンとタングステンが含まれるモリブデン-タングステン合金で構成されることを特徴とする、請求項1に記載の基板加熱装置。
- 前記第1発熱体、前記第2発熱体又は前記第3発熱体のうち一つ以上は、焼鈍(annealing)工程を含む熱処理工程を経ることを特徴とする、請求項11に記載の基板加熱装置。
- 前記モリブデン-タングステン合金中にモリブデンは40~80%、タングステンは20~60%の割合で構成されることを特徴とする、請求項7、9又は11のいずれか一項に記載の基板加熱装置。
- 前記焼鈍(annealing)工程は、モリブデンの再結晶温度とタングステンの再結晶温度の範囲内で選択された温度でなされることを特徴とする、請求項8、10又は12のいずれか一項に記載の基板加熱装置。
- 前記熱処理工程には、前記第1発熱体、前記第2発熱体および前記第3発熱体の少なくとも1つを、前記モリブデンにシグマ相(sigma phase)が生成される温度区間で急速に冷却させる急速冷却工程が含まれることを特徴とする、請求項8、10又は12のいずれか一項に記載の基板加熱装置。
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JP2003272805A (ja) | 2002-03-18 | 2003-09-26 | Ngk Insulators Ltd | セラミックヒーター |
WO2020170800A1 (ja) | 2019-02-19 | 2020-08-27 | 日本碍子株式会社 | セラミックヒータ及びその製法 |
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JPS6075546A (ja) * | 1983-09-30 | 1985-04-27 | Toshiba Corp | 高温強度に優れたモリブデン材 |
JP2642858B2 (ja) * | 1993-12-20 | 1997-08-20 | 日本碍子株式会社 | セラミックスヒーター及び加熱装置 |
JP2001102157A (ja) | 1999-10-01 | 2001-04-13 | Ngk Insulators Ltd | セラミックスヒータ |
KR20090008801A (ko) * | 2007-07-19 | 2009-01-22 | (주) 대성에너텍 | 전기온돌의 히팅케이블 연결구조 |
US11111552B2 (en) * | 2013-11-12 | 2021-09-07 | Ati Properties Llc | Methods for processing metal alloys |
KR102348108B1 (ko) * | 2015-10-05 | 2022-01-10 | 주식회사 미코세라믹스 | 온도 편차 특성이 개선된 기판 가열 장치 |
JP6690918B2 (ja) * | 2015-10-16 | 2020-04-28 | 日本特殊陶業株式会社 | 加熱部材、静電チャック、及びセラミックヒータ |
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- 2022-08-25 TW TW111132092A patent/TWI816528B/zh active
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JP2003272805A (ja) | 2002-03-18 | 2003-09-26 | Ngk Insulators Ltd | セラミックヒーター |
WO2020170800A1 (ja) | 2019-02-19 | 2020-08-27 | 日本碍子株式会社 | セラミックヒータ及びその製法 |
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US20230068876A1 (en) | 2023-03-02 |
TWI816528B (zh) | 2023-09-21 |
JP2023035957A (ja) | 2023-03-13 |
KR20230032890A (ko) | 2023-03-07 |
TW202310104A (zh) | 2023-03-01 |
CN115734405A (zh) | 2023-03-03 |
KR102437076B1 (ko) | 2022-08-29 |
KR102597041B1 (ko) | 2023-11-02 |
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