JP7417791B2 - スイッチング電力コンバーターにおいて半導体スイッチを保護すること - Google Patents
スイッチング電力コンバーターにおいて半導体スイッチを保護すること Download PDFInfo
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- JP7417791B2 JP7417791B2 JP2019124644A JP2019124644A JP7417791B2 JP 7417791 B2 JP7417791 B2 JP 7417791B2 JP 2019124644 A JP2019124644 A JP 2019124644A JP 2019124644 A JP2019124644 A JP 2019124644A JP 7417791 B2 JP7417791 B2 JP 7417791B2
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- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000001514 detection method Methods 0.000 claims description 75
- 230000004044 response Effects 0.000 claims description 16
- 230000005856 abnormality Effects 0.000 description 22
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- 238000004891 communication Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
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- 238000000034 method Methods 0.000 description 10
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000001939 inductive effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
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- 230000012447 hatching Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 101001074602 Homo sapiens Protein PIMREG Proteins 0.000 description 1
- 102100036258 Protein PIMREG Human genes 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
- H02H1/0007—Details of emergency protective circuit arrangements concerning the detecting means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Power Conversion In General (AREA)
Description
Claims (10)
- 電力半導体スイッチを駆動するためのドライバ回路であって、
前記電力半導体スイッチが、制御入力と主端子とを含み、
前記ドライバ回路が、
前記電力半導体スイッチの前記制御入力に結合されるように、および、前記制御入力に対して駆動信号を提供するように構成された制御端子ドライバ回路と、
前記電力半導体スイッチの主端子に結合されるように構成された検出端子と、
オフ切り替え中に前記検出端子に入力された電流をミラーリングするように前記検出端子に結合されたカレントミラーと、
前記カレントミラーから受信された電流信号と第1の電流閾値とを比較するように、および、前記比較の結果を表す第1の信号を出力するように結合された第1の電流比較器であって、前記第1の電流閾値が、オフ切り替え中の前記主端子の最高電圧を表す、第1の電流比較器と、
前記検出端子から受信された信号とオン切り替え閾値とを比較するように、および、前記比較の結果を表す第2の信号を出力するように結合された第2の電圧比較器であって、前記オン切り替え閾値が、オン切り替え中の前記主端子の最高電圧を表す、第2の電圧比較器と、
を備え、
前記第1の電流比較器と前記第2の電圧比較器とスイッチング回路とが単一の半導体パッケージ内にあり、
前記検出端子が、前記半導体パッケージの端子である、
ドライバ回路。 - オフ切り替え中、および、オフ状態において、前記カレントミラーを前記検出端子に結合するように、および、オン切り替え中、および、オン状態において、前記カレントミラーを前記検出端子から結合解除するようにスイッチング可能な前記スイッチング回路を備える、
請求項1に記載のドライバ回路。 - 前記スイッチング回路が、前記電力半導体スイッチが前記オフ状態になるか、前記オン状態になるかを示す駆動状態信号を受信するように、結合された、
請求項2に記載のドライバ回路。 - 前記第1の電流閾値が、オフ状態における前記主端子の前記最高電圧をさらに表し、
前記オン切り替え閾値が、オン状態における前記主端子の前記最高電圧をさらに表す、
請求項1から請求項3のいずれか一項に記載のドライバ回路。 - 前記制御端子ドライバ回路が、オフ切り替え中の前記主端子の電圧が前記第1の電流閾値を上回ったことを示す前記第1の信号に応答して、オフ切り替え速度を下げるように応答する、
請求項1から請求項3のいずれか一項に記載のドライバ回路。 - 前記検出端子から受信された前記信号がオン切り替え中に前記オン切り替え閾値を上回ったことを前記第2の信号が示している間の持続期間を計時するタイマー回路をさらに備える、
請求項1から請求項3のいずれか一項に記載のドライバ回路。 - 前記第1の電流閾値が、可変閾値である、
請求項1から請求項3のいずれか一項に記載のドライバ回路。 - 前記検出端子の入力インピーダンスが、オン切り替え中よりオフ切り替え中に比較的小さい、
請求項1から請求項3のいずれか一項に記載のドライバ回路。 - 前記検出端子の前記入力インピーダンスが、オフ切り替え中に200キロオーム未満であり、オン切り替え中に10メガオームより大きい、
請求項8に記載のドライバ回路。 - 前記検出端子の前記入力インピーダンスが、オフ切り替え中に10キロオーム未満であり、オン切り替え中に100メガオームより大きい、
請求項9に記載のドライバ回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023140045A JP2024007553A (ja) | 2018-07-12 | 2023-08-30 | スイッチング電力コンバーターにおいて半導体スイッチを保護すること |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18183155.3A EP3595152B1 (en) | 2018-07-12 | 2018-07-12 | Protecting semiconductor switches in switched mode power converters |
EP18183155.3 | 2018-07-12 |
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JP2023140045A Division JP2024007553A (ja) | 2018-07-12 | 2023-08-30 | スイッチング電力コンバーターにおいて半導体スイッチを保護すること |
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JP2020025444A JP2020025444A (ja) | 2020-02-13 |
JP2020025444A5 JP2020025444A5 (ja) | 2022-06-27 |
JP7417791B2 true JP7417791B2 (ja) | 2024-01-19 |
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JP2019124644A Active JP7417791B2 (ja) | 2018-07-12 | 2019-07-03 | スイッチング電力コンバーターにおいて半導体スイッチを保護すること |
JP2023140045A Pending JP2024007553A (ja) | 2018-07-12 | 2023-08-30 | スイッチング電力コンバーターにおいて半導体スイッチを保護すること |
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Country Status (4)
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US (3) | US11368148B2 (ja) |
EP (2) | EP3595152B1 (ja) |
JP (2) | JP7417791B2 (ja) |
CN (1) | CN110719015B (ja) |
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EP3595152B1 (en) * | 2018-07-12 | 2023-09-06 | Power Integrations, Inc. | Protecting semiconductor switches in switched mode power converters |
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WO2021232286A1 (en) * | 2020-05-20 | 2021-11-25 | Innoscience (Zhuhai) Technology Co., Ltd. | Electronic device and over current protection circuit |
US11539359B2 (en) | 2021-03-02 | 2022-12-27 | Infineon Technologies Ag | Monitoring safe operating area (SAO) of a power switch |
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JP7267376B1 (ja) | 2021-10-22 | 2023-05-01 | 三菱電機株式会社 | 短絡検知回路 |
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2019
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- 2019-07-12 CN CN201910627843.7A patent/CN110719015B/zh active Active
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Also Published As
Publication number | Publication date |
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CN110719015B (zh) | 2024-02-13 |
CN110719015A (zh) | 2020-01-21 |
EP3595152A1 (en) | 2020-01-15 |
EP4283852A1 (en) | 2023-11-29 |
US20230361767A1 (en) | 2023-11-09 |
US20220393676A1 (en) | 2022-12-08 |
US20200021284A1 (en) | 2020-01-16 |
EP3595152B1 (en) | 2023-09-06 |
US11973494B2 (en) | 2024-04-30 |
US11683030B2 (en) | 2023-06-20 |
JP2020025444A (ja) | 2020-02-13 |
US11368148B2 (en) | 2022-06-21 |
JP2024007553A (ja) | 2024-01-18 |
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