JP7403765B2 - 3次元デバイスおよび3次元デバイスを製造する方法 - Google Patents
3次元デバイスおよび3次元デバイスを製造する方法 Download PDFInfo
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- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Description
非特許文献1 IEEE Design & Test, Volume:34, Hongshin Jun, et al, High-Bandwidth Memory (HBM) Test Challenges and Solutions
20 プロセッサ
30 基板
40 インターポーザ
50 3次元デバイス
100 回路チップ
110 インターコネクト部
115 貫通配線
120 制御チップ
200 回路面
210 分割領域
220 分割領域
230 分割領域
240 分割領域
300 コマンド受信部
310 アドレスレジスタ
320 コマンド処理部
500 コマンド受信部
510 アドレスレジスタ
520 コマンド処理部
530 コマンド送信部
B0-B15 メモリブロック
C0-C8 回路チップ
Claims (11)
- 回路面を分割した複数の分割領域のそれぞれに複数の回路ブロックをそれぞれ有する積層された複数の回路チップと、
前記複数の回路チップにおける、積層方向に重なる各分割領域に含まれる複数の回路ブロックのグループ毎に、グループ内の回路ブロックの中から選別された予め定められた数の回路ブロックと通信可能に接続されるインターコネクト部と
を備える3次元デバイス。 - 前記インターコネクト部は、少なくとも1つの回路チップを貫通して前記複数の回路チップの積層方向に延伸する貫通配線を有する
請求項1に記載の3次元デバイス。 - 前記回路ブロックのグループの少なくとも1つは、不良品と判断された少なくとも1つの回路ブロックと、良品と判断された前記予め定められた数の回路ブロックとを含む
請求項1または2に記載の3次元デバイス。 - 前記不良品と判断された前記少なくとも1つの回路ブロックは、前記インターコネクト部および電源の少なくとも一方との接続が切断されている
請求項3に記載の3次元デバイス。 - 前記回路チップの下または上に、前記インターコネクト部に接続されて、各回路ブロックを制御する制御チップを備える
請求項1から4のいずれか一項に記載の3次元デバイス。 - 前記制御チップは、
複数の前記回路ブロックのそれぞれに対応付けられたアドレスを設定するアドレスレジスタと、
当該3次元デバイスに対するアドレスの指定を含むコマンドを受信するコマンド受信部と、
前記コマンドが受信されたことに応じて、前記コマンドで指定された前記アドレスに対応づけられた前記回路ブロックにアクセスするコマンド処理部と、を有する
請求項5に記載の3次元デバイス。 - 複数の前記回路ブロックのそれぞれは、
複数の前記回路ブロックのそれぞれに対応付けられたアドレスを設定するアドレスレジスタと、
前記インターコネクト部を介してコマンドを受信するコマンド受信部と、
前記コマンドが受信されたことに応じて、前記コマンドで指定された処理を実行するコマンド処理部と、を有する
請求項1から5のいずれか一項に記載の3次元デバイス。 - 前記アドレスレジスタは、前記回路ブロックに対応するアドレスの設定を書き換え可能である
請求項6または7に記載の3次元デバイス。 - 複数の前記回路ブロックのそれぞれは、メモリブロックである
請求項1から8のいずれか一項に記載の3次元デバイス。 - 3次元デバイスを製造する方法であって、
回路面を分割した複数の分割領域のそれぞれに1以上の回路ブロックを有する回路チップ領域が配列されたウェーハを形成する段階と、
前記ウェーハ上の前記回路ブロックをそれぞれテストする段階と、
複数の前記ウェーハを積層する段階と、
前記積層された複数のウェーハを各回路チップ領域でダイシングして、積層された複数の回路チップを形成する段階と、
前記ダイシングする段階の後または前に、積層方向に重なる各分割領域に含まれる回路ブロックのグループ毎に、前記テストの結果に基づいてグループ内の回路ブロックの中から選別された予め定められた数の回路ブロックと通信可能に接続されたインターコネクト部を形成する段階と
を備える製造方法。 - 前記複数のウェーハを積層させる段階は、前記テストにおいて良品と判断された回路ブロックの前記ウェーハにおける位置に基づいて、積層方向に重なる各分割領域に含まれる回路ブロックのグループ毎に、前記テストで良品と判断された回路ブロックが少なくとも前記予め定められた数重なる3次元デバイスの数に基づいて、積層する前記ウェーハの組み合わせを選択する段階を有する
請求項10に記載の製造方法。
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JP2019234428A JP7403765B2 (ja) | 2019-12-25 | 2019-12-25 | 3次元デバイスおよび3次元デバイスを製造する方法 |
US16/953,350 US20210202477A1 (en) | 2019-12-25 | 2020-11-20 | Three-dimensional device and manufacturing method thereof |
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JP2001307057A (ja) | 2000-04-20 | 2001-11-02 | Toshiba Corp | マルチチップ半導体装置及びメモリカード |
JP2013077767A (ja) | 2011-09-30 | 2013-04-25 | Toshiba Corp | 半導体装置及びその製造方法、並びに半導体装置の管理システム |
JP2014071932A (ja) | 2012-10-01 | 2014-04-21 | Toppan Printing Co Ltd | マルチチップメモリモジュール |
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JP2001307057A (ja) | 2000-04-20 | 2001-11-02 | Toshiba Corp | マルチチップ半導体装置及びメモリカード |
JP2013077767A (ja) | 2011-09-30 | 2013-04-25 | Toshiba Corp | 半導体装置及びその製造方法、並びに半導体装置の管理システム |
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