JP7398612B2 - Semiconductor device manufacturing system and semiconductor device manufacturing method - Google Patents

Description

The present invention relates to a semiconductor device manufacturing system and a semiconductor device manufacturing method for manufacturing a semiconductor device by stacking a plurality of components on a substrate.

2. Description of the Related Art Conventionally, as an apparatus for manufacturing small, high-performance semiconductor devices, a semiconductor device manufacturing apparatus is known in which a plurality of components having bumps on the lower surface are stacked on a substrate. In such semiconductor device manufacturing equipment, a bonding film made of a non-conductive thermosetting material is usually pasted on the bump forming surface (lower surface) of the component, and the component is repeatedly heated while being pressed by a mounting head. This allows the parts to be layered. In addition, as a technique for mounting components on a board with a thermosetting resin interposed between the board and the board, it is necessary to repeat heating and cooling during the process of heating the part with pressure means to improve bonding reliability. It is known that this method is effective in terms of improving performance (for example, Patent Document 1 below).

Japanese Patent Application Publication No. 2004-31885

However, when manufacturing semiconductor devices by stacking multiple parts on a substrate, repeatedly heating and cooling each of the stacked parts takes a lot of time to manufacture each semiconductor device, and production There was a problem with it being bad. The problem became more pronounced as the number of stacked layers of the semiconductor device to be manufactured increased.

Therefore, the present invention provides a semiconductor device manufacturing system and a semiconductor device manufacturing method that can shorten the time required for laminating each component and improve productivity when manufacturing a semiconductor device consisting of a plurality of laminated components. The purpose is to provide.

The semiconductor device manufacturing system of the present invention laminates a plurality of components, each having a bonding film made of a thermosetting material on the lower surface on which bumps are formed, on a substrate held on a stage to produce a semiconductor device. A semiconductor device manufacturing system for manufacturing a semiconductor device, comprising: a component stacking section for bonding and stacking a plurality of components on the substrate by ultrasonic bonding using an ultrasonic head; a heating unit that thermally cures the bonding films of each of the plurality of components at once by heating them all at once , and a bonding surface height that is the height of the component bonding surface on which the components are bonded from the stage; Welding conditions for joining parts using the ultrasonic head are set accordingly .

In the semiconductor device manufacturing method of the present invention, a semiconductor device is manufactured by laminating a plurality of components having a bonding film made of a thermosetting material on the lower surface on which bumps are formed on a substrate held on a stage. A semiconductor device manufacturing method for manufacturing a semiconductor device, comprising: a component lamination step in which a plurality of components are bonded and laminated on the substrate by ultrasonic bonding using an ultrasonic head; and a plurality of components laminated in the component lamination step are assembled. a heating step of thermally curing the bonding films of each of the plurality of components at once by heating the components, the bonding surface height being the height from the stage of the component bonding surface to which the components are bonded; Welding conditions for joining parts using the ultrasonic head are set accordingly .

According to the present invention, in manufacturing a semiconductor device formed by stacking a plurality of components, it is possible to shorten the time required for stacking each component and improve productivity.

Configuration diagram of a semiconductor device manufacturing system according to an embodiment of the present invention A schematic configuration diagram of a component stacking section included in a semiconductor device manufacturing system according to an embodiment of the present invention Enlarged view of main parts of a component stacking section included in a semiconductor device manufacturing system according to an embodiment of the present invention A flowchart showing a procedure for manufacturing a semiconductor device using a semiconductor device manufacturing system according to an embodiment of the present invention. (a) (b) Diagrams explaining the operation of the component stacking section included in the semiconductor device manufacturing system according to an embodiment of the present invention (a) (b) Diagrams explaining the operation of the component stacking section included in the semiconductor device manufacturing system according to an embodiment of the present invention (a) A graph showing an example of the data of the correspondence between the bonding surface height and the bonding time, which is stored in the control device of the semiconductor device manufacturing system according to an embodiment of the present invention.(b) The graph showing the relationship between the bonding surface height and the pressing force (c) Graph showing an example of data on the correspondence between the height of the bonding surface and the ultrasonic output of the ultrasonic head

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a semiconductor device manufacturing system 1 in one embodiment of the present invention. The semiconductor device manufacturing system 1 includes an upstream stocker 11, a component stacking section 12, a downstream stocker 13, and a heating section (oven) 14.

The upstream stocker 11 includes a magazine MG therein, and a plurality of substrates 2 are stored in the magazine MG. The component stacking unit 12 stacks a plurality of components 3 on the substrate 2 sent from the magazine MG of the upstream stocker 11 to generate a component stack 4 (details will be described later). The downstream stocker 13 includes a magazine MG therein, and stores the component stack 4 produced in the component stack unit 12. The magazine MG in the downstream stocker 13 is carried into the heating section 14 by an operator. The heating unit 14 collectively heats the plurality of component stacks 4 for each magazine MG carried in from the downstream stocker 13 .

Here, the configuration of the component stacking section 12 will be explained. In FIG. 2, the component stacking section 12 includes a component supply section 21, a stage 22, a head moving mechanism 23. It includes an ultrasonic head 24 and a control device 25.

In FIG. 2, the component supply unit 21 supplies the component 3 with the component 3 placed on the top surface. The component 3 has a plurality of bumps 3B on its lower surface, and a bonding film 3F made of an electrically conductive thermosetting material is further attached to the lower surface of the component 3 (see also FIG. 3). The bonding film 3F is a sheet-like member that is flexible at room temperature, but when exposed to a temperature higher than a predetermined temperature, it is thermosetted and becomes hard, and functions as a bonding material. A plurality of electrodes 3D are provided on the upper surface of the component 3 to which a plurality of bumps 3B of the component 3 stacked on the component 3 are bonded (FIG. 3).

In FIG. 2, the stage 22 is composed of a block-shaped member with a flat upper surface. A plurality of suction openings (not shown) are formed on the upper surface of the stage 22, and a suction mechanism (not shown) connected to the suction openings is provided inside the stage 22. When the suction mechanism applies vacuum suction from the suction opening with the substrate 2 placed on the top surface of the stage 22, the substrate 2 is suctioned and held on the top surface of the stage 22. A stage elevating section 22K is provided below the stage 22, and the stage 22 is elevated and lowered by the stage elevating section 22K.

In FIG. 2, the stage 22 is provided with a stage heater 22H and a stage thermocouple 22N. The stage heater 22H heats the stage 22, and the stage thermocouple 22N measures the temperature of the stage 22. The stage heater 22H heats the substrate 2 held on the stage 22 by heating the stage 22.

In FIG. 2, the head moving mechanism 23 is provided above the stage 22. The head moving mechanism 23 has a head elevating section 23A and a head horizontal moving section 23B. The head elevating section 23A is constituted of a cylinder here, and the tip of the piston rod 23R is directed downward. The ultrasonic head 24 is attached to the tip (lower end) of the piston rod 23R, and the head elevating section 23A moves the ultrasonic head 24 up and down by operating the piston rod 23R. The head horizontal moving section 23B moves the head elevating section 23A together with the ultrasonic head 24 in the horizontal direction.

The ultrasonic head 24 is moved by the head moving mechanism 23 to bond the component 3 to the top surface of the substrate 2 held on the stage 22, and further bond the component 3 to the top surface of the component 3 bonded to the top surface of the substrate 2. A plurality of components 3 are stacked on the upper surface of the substrate 2 by joining them. 2 and 3, the ultrasonic head 24 includes a support member 31, a horn 32, an ultrasonic transducer 33, and a bonding tool 34. The support member 31 is connected to the tip of the piston rod 23R of the head elevating section 23A, and supports the horn 32.

The horn 32 is composed of a rod-shaped metal member extending in the horizontal direction. The ultrasonic vibrator 33 is attached to one end of the horn 32 (FIG. 3), and causes the horn 32 to vibrate in the longitudinal direction (longitudinal vibration) by ultrasonic vibration.

In FIGS. 2 and 3, the welding tool 34 is attached to the lower surface of the horn 32 and extends downwardly. When the horn 32 is ultrasonically vibrated by the ultrasonic vibrator 33, the welding tool 34 vibrates in the longitudinal direction of the horn 32 together with the horn 32.

A suction mechanism (not shown) is provided inside the horn 32. A suction force can be generated at the lower end of the welding tool 34 by controlling the vacuum pressure supplied from a vacuum source (not shown) using a suction mechanism. Therefore, when a suction force is generated at the lower end of the welding tool with the lower end surface of the welding tool 34 in contact with the upper surface of the component 3, the component 3 is vacuum-sucked to the lower end surface of the welding tool 34.

2 and 3, the horn 32 is provided with a head heater 24H and a head thermocouple 24N. The head heater 24H heats the welding tool 34 through the horn 32, and when the component 3 is attracted to the welding tool 34, it also heats the component 3 through the welding tool 34. The head thermocouple 24N measures the temperature of the welding tool 34 through the horn 32.

In FIG. 2, the control device 25 includes a movement control section 25a, an adsorption control section 25b, a heating control section 25c, a joining control section 25d, and a storage section 25e. The movement control section 25a controls the stage elevating section 22K to move the stage 22 up and down. Furthermore, the movement control section 25a controls the head elevating section 23A to move the ultrasonic head 24 up and down, and controls the head horizontal movement section 23B to move the ultrasonic head 24 in the horizontal direction. The suction control unit 25b operates the aforementioned suction mechanism provided inside the stage 22 to suction the substrate 2 to the upper surface of the stage 22. The suction control unit 25b also operates the aforementioned suction mechanism provided in the horn 32 of the ultrasonic head 24 to suction the component 3 to the lower end of the welding tool 34.

In FIG. 2, the temperature of the stage 22 measured by the stage thermocouple 22N is input to the control device 25. The heating control unit 25c of the control device 25 performs heating control of the stage heater 22H based on the temperature of the stage 22 measured by the stage thermocouple 22N. Further, in FIG. 2, the temperature of the welding tool 34 measured by the head thermocouple 24N is input to the control device 25. The heating control unit 25c performs heating control of the head heater 24H based on the temperature of the welding tool 34 measured by the head thermocouple 24N.

The joining control unit 25d of the control device 25 sets joining conditions when the ultrasonic head 24 joins the component 3 to the component joining surface. Here, the "component bonding surface" is the surface to which the component 3 to be bonded is to be bonded, and corresponds to the top surface of the substrate 2 or the top surface of the component 3 bonded to the top surface of the substrate 2.

The joining conditions when joining the component 3 to the component joining surface using the ultrasonic head 24 are as follows: the upper component 3 (the component 3 to be joined) is connected to the lower component 3 (the component 3 to which the component 3 is to be joined). The time to apply the pressing force and ultrasonic load when pressing the upper part 3 to the lower part 3 (joining time), the pressing force when pressing the upper part 3 to the lower part 3, the ultrasonic output of the ultrasonic head 24, the time when joining There are temperatures, etc. of both the upper and lower parts 3. The storage section 25e of the control device 25 stores various data including data used by the joining control section 25d during the joining operation of the parts 3.

In FIG. 2, a pressure sensor 23S is provided in the head elevating section 23A. The pressure sensor 23S is made of, for example, a piezoelectric element, detects an upward load acting on the lower end surface of the welding tool 34, and transmits the detected upward load to the control device 25. The control device 25 detects the pressing force with which the ultrasonic head 24 presses the component 3 downward during the welding operation of the component 3, based on the detection information from the pressure sensor 23S.

Next, a procedure (semiconductor device manufacturing method) for manufacturing the semiconductor device 5 (FIG. 1) using the semiconductor device manufacturing system 1 will be explained using the flowchart shown in FIG. Here, it is assumed that the semiconductor device 5 is manufactured by bonding two or more components 3 to the upper surface of the substrate 2.

When manufacturing the semiconductor device 5, the semiconductor device manufacturing system 1 first adjusts the stage 22 and the bonding tool 34 to predetermined temperatures using the stage heater 22H and head heater 24H of the component stacking section 12. Ru. After the temperatures of the stage heater 22H and the head heater 24H of the component stacking section 12 are adjusted, the substrate 2 to which the component 3 will be bonded is taken out from the magazine MG in the upstream stocker 11 and put into the component stacking section 12. (Step ST1).

When the substrate 2 is input, the component stacking section 12 transfers the substrate 2 onto the upper surface of the stage 22 using a substrate transfer section (not shown). Once the substrate 2 is transferred to the upper surface of the stage 22, the component stacking unit 12 operates the aforementioned suction mechanism (not shown) built into the stage 22 to hold the substrate 2 on the stage 22 (step ST2). As a result, the substrate 2 is heated through the stage 22 by the stage heater 22H.

Once the stage 22 holds the substrate 2, the stage lifting section 22K moves the stage 22 in the vertical direction to move the top surface of the substrate 2, which is the component bonding surface, from the reference plane ML fixed to the component stacking section 12. (FIG. 5(a), step ST3). When the upper surface of the substrate 2, which is the component bonding surface, matches the reference height BH, the ultrasonic head 24 picks up the component 3 supplied by the component supply section 21 (step ST4). Specifically, the ultrasonic head 24 is first moved above the component supply section 21 by the operation of the head horizontal moving section 23B, and is lowered by the operation of the head elevating section 23A. Then, the lower end surface of the welding tool 34 is brought into contact with the upper surface of the component 3 supplied by the component supply section 21 to perform vacuum suction, and the component 3 is sucked by the welding tool 34 . After the ultrasonic head 24 adsorbs the component 3 with the welding tool 34, it is raised by the operation of the head elevating section 23A. This completes the pickup of the component 3 by the ultrasonic head 24.

After picking up the component 3, the ultrasonic head 24 moves above the stage 22, that is, above the substrate 2, by the operation of the head horizontal moving section 23B. Then, the head is lowered by the operation of the head elevating section 23A, and the component 3 is pressed and bonded to the upper surface of the substrate 2 (component bonding step of step ST5. FIG. 5(a)→FIG. 5(b)). When the ultrasonic head 24 presses the component 3 against the upper surface of the substrate 2, the bumps 3B provided on the lower surface of the component 3 break through the bonding film 3F attached to the lower surface of the component 3, and the bumps 3B of the component 3 break through the bonding film 3F attached to the lower surface of the component 3. It comes into contact with an electrode (substrate electrode 2T) provided on the upper surface side.

In the component bonding process of step ST5, the ultrasonic head 24 presses the component 3 with a predetermined pressing force set by the bonding control section 25d, and also applies ultrasonic vibration for a predetermined bonding time set by the bonding control section 25d. Part 3 is joined by giving By applying ultrasonic vibration to the component 3, thermal stress is generated between the bump 3B and the substrate electrode 2T, and the bump 3B is bonded to the substrate electrode 2T. Note that during this time, the ultrasonic head 24 presses the component 3, so that the bump 3B is deformed so as to be slightly crushed in the vertical direction (no change occurs in the bonding film 3F).

While the component 3 is being bonded to the component bonding surface (the top surface of the substrate 2), the control device 25 monitors the height of the bump 3B by detecting the height of the ultrasonic head 24, and the monitored bump 3B The change in the shape of the bump 3B is grasped in real time based on the height of the bump 3B. Then, the component 3 is pressed by the ultrasonic head 24 with a predetermined profile so that the height of the bump 3B thus grasped becomes a desired height.

The ultrasonic head 24 stops ultrasonic vibration after a predetermined welding time has elapsed, releases the adsorption of the parts 3 by the welding tool 34, and then rises by operating the head lifting section 23A. This completes the work of bonding the component 3 to the substrate 2.

When the component bonding process of step ST5 is completed, it is determined whether all the components 3 to be bonded to the substrate 2 are bonded and the stacking of the components 3 is completed (step ST6). Then, if the stacking of the components 3 has not been completed, the process returns to step ST3, and if the stacking of the components 3 has been completed, the joining work of the components 3 is finished. Since only one component 3 has been stacked here, the process returns to step ST3.

In the returned step ST3, the stage 22 is lowered to make the next component joining surface (the upper surface of the first layer component 3 joined immediately before) equal to the reference height BH (FIG. 6(a)). Then, after picking up the component 3 (step ST4) in the same manner as in the process of joining the component 3 to the board 2 described above, the component 3 (upper component 3) is replaced with the previously joined component 3 (lower component 3). (component joining process of step ST5. FIG. 6(a)→FIG. 6(b)). When joining the upper part 3 to the upper surface of the lower part 3, the bumps 3B of the upper part 3 are joined to the electrodes 3D provided on the upper surface of the lower part 3.

When the component bonding process of step ST5 is completed, it is determined whether all the components 3 to be bonded to the substrate 2 are bonded and the stacking of the components 3 is completed (step ST6). If the stacking of the parts 3 has not been completed, the process returns to step ST3 and the steps ST3 to ST5 are repeated. In step ST6, if the stacking of the components 3 has been completed, the stacking work of the components 3 is finished. A component stack 4 is generated by completing the stacking operation of the components 3. After the component stack 4 is generated, the component stack 4 is transferred to the magazine MG in the downstream stocker 13 by the aforementioned board transfer section (not shown) (step ST7).

When the component stack 4 is carried out from the component stack section 12 to the magazine MG in the downstream stocker 13 and a certain amount of the component stack 4 is stocked in the magazine MG in the downstream stocker 13, the operator The magazine MG is taken out from the side stocker 13 and placed in the heating section 14 (step ST8).

After putting the magazine MG into the heating section 14, the operator heats the entire magazine MG using the heating section 14 (heating step of step ST9). As a result, each component stack 4 in the magazine MG is heated. Note that the heating unit 14 may heat the magazines MG for a plurality of magazines MG at once.

The temperature inside the heating section 14 in the heating step is set to a predetermined temperature higher than the temperature at which the bonding film 3F attached to the component 3 starts to thermoset. Therefore, in each component laminate 4, the bonding film 3F attached to the lower surface of each component 3 is softened and then thermally hardened. As a result, the vertically adjacent components 3 are firmly bonded to each other by the thermoset bonding film 3F, and the semiconductor device 5 is manufactured (FIG. 1). After the heating process is completed, the operator takes out the magazine MG from the heating section 14 (step ST10).

As described above, in the semiconductor device manufacturing system 1 (semiconductor device manufacturing method) according to the present embodiment, after a plurality of components 3 are bonded and stacked on the substrate 2 by ultrasonic bonding using the ultrasonic head 24 (step ST3 - component lamination step of step ST5), by collectively heating the plurality of laminated components 3, the bonding films 3F of each of the plurality of components 3 are collectively thermally cured (heating step of step ST9). ). In the component lamination process, the components 3 are joined by ultrasonic bonding, which can be performed in an extremely short time (also, heating of the bonding film 3F is not involved), so the time required for laminating the components 3 is extremely short. becomes. Then, the heating unit 14 heats the entire plurality of laminated components 3 (i.e. component laminate 4) and heat-cures the bonding film 3F of each component 3 at once, so the number of layers in the component 3 is irrelevant. In addition, the bonding films 3F of all the parts 3 can be thermally cured in a short time.

Therefore, according to the semiconductor device manufacturing system 1 (semiconductor device manufacturing method) in this embodiment, the time required for laminating each component 3 is reduced in manufacturing the semiconductor device 5 formed by laminating a plurality of components 3. As a result, the productivity of the semiconductor device 5 can be greatly improved.

By the way, as the component 3 is bonded to the top surface of the component 3 and stacking progresses, the height of the component bonding surface to which the next component 3 is bonded from the stage 22 gradually increases, and the higher the layer is ( As the bonding surface height SH increases), the temperature of the component 3 during bonding becomes lower than the temperature when the component 3 on the lower layer side is bonded. Therefore, in the present embodiment, in the above-described component joining process of step ST5, the joining conditions when joining the parts 3 by the ultrasonic head 24 are set such that the joining conditions from the stage 22 of the parts joining surface to which the parts 3 are to be joined are set as follows. It is set according to the height (referred to as "joint surface height SH", FIG. 3). Specifically, the bonding time is the time during which the ultrasonic head 24 applies a pressing force and ultrasonic load to the component 3, and the pressing time is the time during which the ultrasonic head 24 applies a pressing force and an ultrasonic load to the component 3. The pressure or the ultrasonic output of the ultrasonic head 24 is not set constant regardless of the joint surface height SH, but is set variably according to the joint surface height SH.

Specifically, in this embodiment, the bonding time is changed depending on the bonding surface height SH, or the pressing force is changed depending on the bonding surface height SH, or alternatively, the bonding time is changed depending on the bonding surface height SH. to change the ultrasonic output of the ultrasonic head 24. When changing the bonding time according to the bonding surface height SH, for example, the data of the correspondence relationship between the bonding surface height SH and the bonding time Tv shown by the graph of FIG. 7(a) stored in the storage unit 25e is used. Based on this, the value of the bonding time Tv with respect to the bonding surface height SH is read and set. In addition, when changing the pressing force according to the joint surface height SH, for example, the correspondence between the joint surface height SH and the pressing force P shown in the graph of FIG. 7(b) stored in the storage section 25e. Based on the related data, the value of the pressing force P with respect to the joint surface height SH is read and set. In addition, when changing the ultrasonic output of the ultrasonic head 24 according to the bonding surface height SH, for example, the bonding surface height SH shown by the graph of FIG. 7(c) stored in the storage section 25e Based on the data on the correspondence of the ultrasonic output V of the ultrasonic head 24, the value of the ultrasonic output V with respect to the bonding surface height SH is read out and set.

As described above, in the present embodiment, the welding conditions when joining the parts 3 by the ultrasonic head 24 are set such that the height from the stage 22 of the part joining surface (the upper surface of the part 3 that was just joined) to which the parts 3 are joined is set. Since it is set according to the joint surface height SH, the height of the component joint surface to which the next component 3 is to be welded from the stage 22 gradually increases, and as it approaches the upper layer ( Even if the temperature of the parts 3 during bonding becomes lower as the bonding surface height SH becomes larger), this can be corrected and good bonding can be achieved.

As explained above, according to the semiconductor device manufacturing system 1 and the semiconductor manufacturing method according to the present embodiment, the time required for laminating each component 3 in manufacturing the semiconductor device 5 formed by laminating a plurality of components 3. can be shortened and productivity can be improved.

To provide a semiconductor device manufacturing system and a semiconductor device manufacturing method capable of improving productivity by shortening the time required for laminating each component in manufacturing a semiconductor device formed by laminating a plurality of components.

1 Semiconductor device manufacturing system 2 Substrate 3 Component 3B Bump 3F Bonding film 4 Component laminate 5 Semiconductor device 12 Component laminate section 14 Heating section 22 Stage 24 Ultrasonic head SH Bonding surface height Tv Bonding time P Pressing force

Claims (12)

A semiconductor device manufacturing system that manufactures semiconductor devices by laminating a plurality of components on a substrate held on a stage, each having a bonding film made of a thermosetting material attached to the lower surface on which bumps are formed. hand,
a component stacking unit for bonding and stacking a plurality of components on the substrate by ultrasonic bonding using an ultrasonic head;
a heating section that collectively heats the plurality of components laminated by the component lamination section to heat-cure the bonding film of each of the plurality of components at once;
A semiconductor device manufacturing system that sets bonding conditions for bonding components using the ultrasonic head according to a bonding surface height that is a height from the stage of a component bonding surface to which the components are bonded. When the upper component is bonded to the upper surface of the lower component, the component stacking unit brings the bumps of the upper component into contact with the upper surface of the lower component on the upper surface side of the heated stage, and The bump on the upper side is ultrasonically bonded to the lower part by applying ultrasonic vibration to the upper part while pressing the upper part against the lower part with a pressing force of The semiconductor device manufacturing system according to claim 1. further comprising a stage elevating section for elevating the stage,
The part held by the ultrasonic head is bonded immediately before the stage is lowered by the stage elevating section so that the component bonding surface, which is the upper surface of the component bonded immediately before, is aligned at a reference height. The semiconductor device manufacturing system according to claim 1 or 2, wherein the semiconductor device manufacturing system is bonded to a component. 3. The semiconductor device manufacturing system according to claim 1, wherein the component stacking section changes the time during which the ultrasonic head applies the pressing force and ultrasonic load to the component depending on the height of the bonding surface. 3. The semiconductor device manufacturing system according to claim 2 , wherein the component stacking section changes the magnitude of the pressing force applied from the upper component to the lower component by the ultrasonic head depending on the height of the bonding surface. 3. The semiconductor device manufacturing system according to claim 1, wherein the component stacking section changes the magnitude of the ultrasonic output of the ultrasonic head depending on the height of the bonding surface. A semiconductor device manufacturing method in which a semiconductor device is manufactured by laminating a plurality of components on a substrate held on a stage, each of which has a bonding film made of a thermosetting material attached to the lower surface on which bumps are formed. hand,
a component stacking step of bonding and stacking a plurality of components on the substrate by ultrasonic bonding using an ultrasonic head;
a heating step of thermally curing the bonding film of each of the plurality of components at once by heating the plurality of components laminated in the component lamination step,
A semiconductor device manufacturing method, wherein bonding conditions for bonding components by the ultrasonic head are set according to a bonding surface height that is a height from the stage of a component bonding surface to which the components are bonded. In the component stacking step, when joining the upper component to the upper surface of the lower component, the bumps of the upper component are brought into contact with the upper surface of the lower component on the upper surface side of the heated stage, and a predetermined The bump on the upper side is ultrasonically bonded to the lower part by applying ultrasonic vibration to the upper part while pressing the upper part against the lower part with a pressing force of 8. The semiconductor device manufacturing method according to claim 7. The part held by the ultrasonic head is moved to the part held by the ultrasonic head in a state where the stage is lowered by the stage lift section so that the part joining surface, which is the upper surface of the part joined immediately before, is aligned with the reference height. The semiconductor device manufacturing method according to claim 7 or 8, wherein the semiconductor device manufacturing method is bonded to. 9. The semiconductor device manufacturing method according to claim 7, wherein in the component laminating step, the time period during which the ultrasonic head applies the pressing force and the ultrasonic load to the component is changed depending on the height of the bonding surface. 9. The semiconductor device manufacturing method according to claim 8 , wherein in the component lamination step, the magnitude of the pressing force applied from the upper component to the lower component by the ultrasonic head is changed depending on the height of the bonding surface. 9. The semiconductor device manufacturing method according to claim 7, wherein in the component lamination step, the magnitude of the ultrasonic output of the ultrasonic head is changed depending on the height of the bonding surface.

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