JP7368338B2 - Micro LED display device - Google Patents

Micro LED display device Download PDF

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JP7368338B2
JP7368338B2 JP2020170084A JP2020170084A JP7368338B2 JP 7368338 B2 JP7368338 B2 JP 7368338B2 JP 2020170084 A JP2020170084 A JP 2020170084A JP 2020170084 A JP2020170084 A JP 2020170084A JP 7368338 B2 JP7368338 B2 JP 7368338B2
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wiring
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display device
solder
led
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JP2022061868A (en
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勲 安達
晴美 奥野
貴之 太田
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エルジー ディスプレイ カンパニー リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Description

本発明は、マイクロＬＥＤ（Light Emitting Diode）表示装置に関する。 The present invention relates to a micro LED (Light Emitting Diode) display device.

近年、マイクロＬＥＤディスプレイと呼ばれる、マトリクス状に配置されたＬＥＤ素子の発光を制御することで映像を表示するマイクロＬＥＤ表示装置が注目されている。
このようなマイクロＬＥＤ表示装置は、例えば、配線基板に設けられた、第１方向に延在する複数の縦配線と第２方向に延在する複数の横配線とで区画される画素領域にＬＥＤ素子を自己凝集半田（ＳＡＰ：self-assembly anisotropic conductive paste）により実装することで高精細化が実現される。
従来のマイクロＬＥＤ表示装置では、縦配線と横配線とが短絡しないように、縦配線と横配線との配線交差部に絶縁層が設けられ、該配線交差部においていずれかの配線をブリッジ接続する構造としている。 In recent years, a micro LED display device called a micro LED display that displays images by controlling the light emission of LED elements arranged in a matrix has been attracting attention.
Such a micro LED display device, for example, includes LEDs in a pixel area provided on a wiring board and defined by a plurality of vertical wirings extending in a first direction and a plurality of horizontal wirings extending in a second direction. High definition is achieved by mounting the elements using self-assembly anisotropic conductive paste (SAP).
In a conventional micro LED display device, an insulating layer is provided at the intersection of the vertical wiring and the horizontal wiring to prevent a short circuit between the vertical wiring and the horizontal wiring, and one of the wirings is bridge-connected at the wiring intersection. It has a structure.

例えば、特許文献１の図１２には、タッチ駆動電極１１０Ｔ上に絶縁膜１１０Ｉを配置し、絶縁膜１１０Ｉ上にブリッジ１１０Ｂを配置するブリッジ構造が開示されている。 For example, FIG. 12 of Patent Document 1 discloses a bridge structure in which an insulating film 110I is disposed on a touch drive electrode 110T and a bridge 110B is disposed on the insulating film 110I.

米国特許出願公開第２０２０／１９４５１５号明細書US Patent Application Publication No. 2020/194515

しかしながら、従来の技術では、配線交差部に絶縁層を形成し、該交差部においていずれかの配線をブリッジさせる構造を形成するために工程数及びフォトマスク数が増加する。 However, in the conventional technique, the number of steps and the number of photomasks increase because an insulating layer is formed at the wiring intersection and a structure is formed in which any of the wirings is bridged at the intersection.

本発明は、上記に鑑み、従来よりもマイクロＬＥＤ表示装置の配線基板の作製工程を簡略にすることを目的とする。 In view of the above, an object of the present invention is to simplify the manufacturing process of a wiring board for a micro LED display device compared to the conventional method.

上述の課題を解決して目的を達成する本発明は、第１方向に延在する配線と該第１方向に交差する第２方向に延在する配線とが設けられた配線基板に複数のＬＥＤ素子が実装されたマイクロＬＥＤ表示装置であって、前記第１方向に延在する配線に接続する端子の各々が、第１領域と、前記第１領域と間隔を空けて設けられた第２領域と、を備え、前記第２方向に延在する配線が、前記第１領域と前記第２領域との間を通り、前記第１方向に延在する配線に接続する端子及び前記第２方向に延在する配線に接続する端子の各々には、自己凝集半田によりＬＥＤ素子の電極が接合されるマイクロＬＥＤ表示装置である。 The present invention, which solves the above-mentioned problems and achieves the object, is a wiring board provided with wiring extending in a first direction and wiring extending in a second direction intersecting the first direction, and a plurality of LEDs. A micro LED display device in which an element is mounted, wherein each terminal connected to the wiring extending in the first direction is provided in a first region and a second region spaced apart from the first region. A wiring extending in the second direction passes between the first region and the second region, a terminal connected to the wiring extending in the first direction, and a terminal extending in the second direction. This is a micro LED display device in which an electrode of an LED element is bonded to each terminal connected to the extending wiring by self-cohesive solder.

上記構成のマイクロＬＥＤ表示装置において、前記第２方向に延在する配線は、前記第１領域と前記第２領域との間では少なくとも上面の全部が難半田性材料により形成されていることが好ましい。 In the micro LED display device having the above configuration, it is preferable that at least the entire upper surface of the wiring extending in the second direction is formed of a difficult-to-solder material between the first region and the second region. .

上記構成のマイクロＬＥＤ表示装置において、前記第２方向に延在する配線は、銅と、前記難半田性材料と、により形成され、前記難半田性材料は、アルミニウム、チタン、モリブデン又はＩＴＯ（Indium Tin Oxide）とするとよい。 In the micro LED display device having the above configuration, the wiring extending in the second direction is formed of copper and the difficult-to-solder material, and the difficult-to-solder material is aluminum, titanium, molybdenum, or ITO (Indium Tin Oxide) is recommended.

上記構成のマイクロＬＥＤ表示装置において、前記第１方向に延在する配線に接続する端子と前記第２方向に延在する配線に接続する端子との間には絶縁性の隔壁が設けられていることが好ましい。 In the micro LED display device having the above configuration, an insulating partition is provided between a terminal connected to the wiring extending in the first direction and a terminal connected to the wiring extending in the second direction. It is preferable.

本発明によれば、従来よりもマイクロＬＥＤ表示装置の配線基板の作製工程を簡略にすることができる。 According to the present invention, the manufacturing process of a wiring board for a micro LED display device can be simplified compared to the conventional method.

図１は、実施形態１に係るマイクロＬＥＤ表示装置の配線基板のブロック図である。FIG. 1 is a block diagram of a wiring board of a micro LED display device according to a first embodiment. 図２は、図１に示すマトリクス部のＬＥＤ素子実装前における概略構成を示す上面図である。FIG. 2 is a top view showing a schematic configuration of the matrix section shown in FIG. 1 before the LED elements are mounted. 図３は、実施形態１におけるＬＥＤ素子実装前のサブ画素の構成を示す上面図である。FIG. 3 is a top view showing the configuration of a sub-pixel before mounting an LED element in the first embodiment. 図４Ａは、図３のＡ１－Ａ１’におけるＬＥＤ素子実装後の断面図である。FIG. 4A is a cross-sectional view taken along line A1-A1' in FIG. 3 after the LED element is mounted. 図４Ｂは、図３のＡ２－Ａ２’におけるＬＥＤ素子実装後の断面図である。FIG. 4B is a cross-sectional view taken along line A2-A2' in FIG. 3 after the LED element is mounted. 図５Ａは、図３のＢ１－Ｂ１’におけるＬＥＤ素子実装後の断面図である。FIG. 5A is a cross-sectional view taken along line B1-B1' in FIG. 3 after the LED element is mounted. 図５Ｂは、図３のＢ２－Ｂ２’におけるＬＥＤ素子実装後の断面図である。FIG. 5B is a cross-sectional view taken along line B2-B2' in FIG. 3 after the LED element is mounted. 図６は、実施形態１におけるＬＥＤ素子実装前のサブ画素の構成を示す他の例の上面図である。FIG. 6 is a top view of another example of the configuration of a sub-pixel before mounting an LED element in Embodiment 1. 図７は、図６のＡ－Ａ’におけるＬＥＤ素子実装後の断面図である。FIG. 7 is a cross-sectional view taken along line A-A' in FIG. 6 after the LED element is mounted. 図８は、図６のＢ－Ｂ’におけるＬＥＤ素子実装後の断面図である。FIG. 8 is a cross-sectional view taken along line B-B' in FIG. 6 after the LED element is mounted. 図９は、実施形態２におけるＬＥＤ素子実装前のサブ画素の構成を示す上面図である。FIG. 9 is a top view showing the configuration of a sub-pixel before mounting an LED element in the second embodiment. 図１０は、図９のＡ－Ａ’におけるＬＥＤ素子実装後の断面図である。FIG. 10 is a cross-sectional view taken along line A-A' in FIG. 9 after the LED element is mounted. 図１１は、図９のＢ－Ｂ’におけるＬＥＤ素子実装後の断面図である。FIG. 11 is a cross-sectional view taken along line BB' in FIG. 9 after the LED element is mounted. 図１２は、実施形態２におけるＬＥＤ素子実装前のサブ画素の構成を示す他の例の上面図である。FIG. 12 is a top view of another example showing the configuration of a sub-pixel before mounting an LED element in the second embodiment. 図１３は、図１２のＡ－Ａ’におけるＬＥＤ素子実装後の断面図である。FIG. 13 is a cross-sectional view taken along line A-A' in FIG. 12 after the LED element is mounted. 図１４は、図１２のＢ－Ｂ’におけるＬＥＤ素子実装後の断面図である。FIG. 14 is a cross-sectional view taken along line BB' in FIG. 12 after the LED element is mounted.

以下、添付図面を参照して、本発明を実施するための形態について説明する。
ただし、本発明は、以下の実施形態の記載によって限定解釈されるものではない。 DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described with reference to the accompanying drawings.
However, the present invention is not limited to the description of the embodiments below.

＜実施形態＞
図１は、本実施形態に係るマイクロＬＥＤ表示装置１の配線基板１０のブロック図である。
図１に示す配線基板１０は、制御部１１と、駆動部１２と、駆動部１３と、マトリクス部１００と、を備える。
制御部１１は、タイミングコントローラーを含み、タイミング同期信号及びデータ電流に基づいて、駆動部１２及び駆動部１３に各々制御信号を出力する。
駆動部１２は、第２方向（以下、Ｘ方向とする）に延在する複数の配線を介してマトリクス部１００に接続され、制御部１１からの制御信号に基づいて、当該複数の配線に駆動信号を出力する。
駆動部１３は、第２方向に交差する第１方向（以下、Ｙ方向とする）に延在する複数の配線を介してマトリクス部１００に接続され、制御部１１からの制御信号に基づいて、当該複数の配線に駆動信号を出力する。
なお、制御部１１、駆動部１２及び駆動部１３は、配線基板１０の外部に設けられていてもよい。 <Embodiment>
FIG. 1 is a block diagram of a wiring board 10 of a micro LED display device 1 according to this embodiment.
The wiring board 10 shown in FIG. 1 includes a control section 11, a drive section 12, a drive section 13, and a matrix section 100.
The control section 11 includes a timing controller, and outputs control signals to the drive section 12 and the drive section 13, respectively, based on the timing synchronization signal and the data current.
The drive section 12 is connected to the matrix section 100 via a plurality of wires extending in a second direction (hereinafter referred to as the X direction), and drives the plurality of wires based on a control signal from the control section 11. Output a signal.
The drive section 13 is connected to the matrix section 100 via a plurality of wirings extending in a first direction (hereinafter referred to as the Y direction) intersecting the second direction, and based on a control signal from the control section 11, A drive signal is output to the plurality of wirings.
Note that the control section 11, the drive section 12, and the drive section 13 may be provided outside the wiring board 10.

図２は、図１に示すマトリクス部１００のＬＥＤ素子実装前における概略構成を示す上面図である。
図２に示すマトリクス部１００は、Ｘ方向に延在する配線１０１と、Ｙ方向に延在する配線１０２と、マトリクス状に配列されたサブ画素１１０と、を備える。
Ｘ方向に延在する配線１０１は、図１に示す駆動部１２に接続されている。
Ｙ方向に延在する配線１０２は、図１に示す駆動部１３に接続されている。 FIG. 2 is a top view showing a schematic configuration of the matrix section 100 shown in FIG. 1 before the LED elements are mounted.
The matrix section 100 shown in FIG. 2 includes a wiring 101 extending in the X direction, a wiring 102 extending in the Y direction, and sub-pixels 110 arranged in a matrix.
The wiring 101 extending in the X direction is connected to the drive unit 12 shown in FIG.
The wiring 102 extending in the Y direction is connected to the drive section 13 shown in FIG.

図３は、本実施形態におけるＬＥＤ素子実装前のサブ画素１１０の構成を示す上面図である。
図３に示すサブ画素１１０には、Ｘ方向に延在する配線１０１に接続するＸ方向端子１１１と、Ｙ方向に延在する配線１０２に接続するＹ方向端子１１２と、Ｘ方向端子１１１とＹ方向端子１１２との間に配された隔壁１１３と、が設けられている。 FIG. 3 is a top view showing the configuration of the sub-pixel 110 before mounting the LED element in this embodiment.
The sub-pixel 110 shown in FIG. 3 includes an X-direction terminal 111 connected to a wiring 101 extending in the A partition wall 113 disposed between the direction terminal 112 and the direction terminal 112 is provided.

Ｘ方向端子１１１は、Ｘ方向に延在する配線１０１が拡大することにより形成されている。
Ｙ方向端子１１２は、第１の領域１１２ａと、第１の領域１１２ａと間隔を空けて設けられた第２の領域１１２ｂと、を備える。
すなわち、Ｙ方向端子１１２は、Ｙ方向に交差する方向で分断されている。
Ｘ方向に延在する配線１０１は、Ｙ方向端子１１２における第１の領域１１２ａと第２の領域１１２ｂとの間を通ることで、Ｘ方向に連続的に設けられている。 The X-direction terminal 111 is formed by expanding the wiring 101 extending in the X-direction.
The Y-direction terminal 112 includes a first region 112a and a second region 112b spaced apart from the first region 112a.
That is, the Y direction terminal 112 is divided in a direction intersecting the Y direction.
The wiring 101 extending in the X direction is provided continuously in the X direction by passing between the first region 112a and the second region 112b of the Y direction terminal 112.

隔壁１１３は、ＬＥＤ素子実装時にＸ方向端子１１１とＹ方向端子１１２との間が短絡することを防止するために設けられた絶縁物である。
隔壁１１３は、無機材料又は有機材料により形成することができる。
無機材料としては、酸化シリコンを例示することができる。
有機材料としては、感光性のアクリル樹脂を例示することができる。 The partition wall 113 is an insulator provided to prevent a short circuit between the X-direction terminal 111 and the Y-direction terminal 112 when mounting the LED element.
The partition wall 113 can be formed of an inorganic material or an organic material.
An example of the inorganic material is silicon oxide.
As the organic material, photosensitive acrylic resin can be exemplified.

なお、Ｘ方向に延在する配線１０１は、第１の領域１１２ａと第２の領域１１２ｂの間に難半田性配線１０１ａを含む。
難半田性配線１０１ａは、Ｘ方向に延在する配線１０１の一部を形成し、少なくとも上面の全部が難半田付性材料で形成された配線である。
例えば、Ｘ方向に延在する配線１０１は銅により形成され、難半田性配線１０１ａはアルミニウム、チタン、モリブデン又はＩＴＯにより形成される。
なお、Ｙ方向に延在する配線１０２は、Ｘ方向に延在する配線１０１の難半田性配線１０１ａ以外の部分と同様に、銅により形成することができる。 Note that the wiring 101 extending in the X direction includes a difficult-to-solder wiring 101a between the first region 112a and the second region 112b.
The hard-to-solder wiring 101a forms a part of the wiring 101 extending in the X direction, and is a wiring whose at least the entire upper surface is made of a hard-to-solder material.
For example, the wiring 101 extending in the X direction is made of copper, and the difficult-to-solder wiring 101a is made of aluminum, titanium, molybdenum, or ITO.
Note that the wiring 102 extending in the Y direction can be formed of copper, similar to the portion of the wiring 101 extending in the X direction other than the difficult-to-solder wiring 101a.

このようなマトリクス部１００を含む配線基板は、絶縁性基板上に導電性材料膜を形成してパターン形成することで配線１０１及び配線１０２を形成し、その後、難半田性材料膜を形成してパターン形成することで難半田性配線１０１ａを形成し、その後、絶縁性材料膜を形成してパターン形成することで隔壁１１３を形成することによって作製される。
このようにして作製したマトリクス部１００を含む配線基板にＬＥＤ素子２００が実装される。 A wiring board including such a matrix portion 100 is formed by forming a conductive material film on an insulating substrate and patterning it to form the wirings 101 and 102, and then forming a film of a difficult-to-solder material. It is manufactured by forming a difficult-to-solder wiring 101a by patterning, and then forming a barrier rib 113 by forming an insulating material film and patterning.
The LED element 200 is mounted on the wiring board including the matrix section 100 produced in this manner.

図４Ａは、図３のＡ１－Ａ１’におけるＬＥＤ素子２００実装後の断面図である。
図４Ｂは、図３のＡ２－Ａ２’におけるＬＥＤ素子２００実装後の断面図である。
図５Ａは、図３のＢ１－Ｂ１’におけるＬＥＤ素子２００実装後の断面図である。
図５Ｂは、図３のＢ２－Ｂ２’におけるＬＥＤ素子２００実装後の断面図である。
ＬＥＤ素子２００は、互いに絶縁された第１のＬＥＤ電極２０１及び第２のＬＥＤ電極２０２を備える。
第１のＬＥＤ電極２０１は、第１の接合部２１１を介してＸ方向端子１１１に接続されている。
第２のＬＥＤ電極２０２は、第２の接合部２１２ａを介してＹ方向端子１１２の第１の領域１１２ａに接続され、第２の接合部２１２ｂを介してＹ方向端子１１２の第２の領域１１２ｂに接続されている。
すなわち、Ｙ方向に延在する配線１０２は、第１の領域１１２ａと第２の領域１１２ｂの間において、第２のＬＥＤ電極２０２、第２の接合部２１２ａ及び第２の接合部２１２ｂによって、ブリッジ接続されている。 FIG. 4A is a cross-sectional view taken along line A1-A1' in FIG. 3 after the LED element 200 is mounted.
FIG. 4B is a cross-sectional view taken along A2-A2' in FIG. 3 after the LED element 200 is mounted.
FIG. 5A is a cross-sectional view taken along line B1-B1' in FIG. 3 after the LED element 200 is mounted.
FIG. 5B is a cross-sectional view taken along line B2-B2' in FIG. 3 after the LED element 200 is mounted.
The LED element 200 includes a first LED electrode 201 and a second LED electrode 202 that are insulated from each other.
The first LED electrode 201 is connected to the X-direction terminal 111 via a first joint 211.
The second LED electrode 202 is connected to the first region 112a of the Y-direction terminal 112 via a second joint 212a, and to the second region 112b of the Y-direction terminal 112 through a second joint 212b. It is connected to the.
That is, the wiring 102 extending in the Y direction is bridged between the first region 112a and the second region 112b by the second LED electrode 202, the second joint 212a, and the second joint 212b. It is connected.

第１の接合部２１１、第２の接合部２１２ａ及び第２の接合部２１２ｂは、自己凝集半田によって形成する。
第１の接合部２１１、第２の接合部２１２ａ及び第２の接合部２１２ｂは、熱硬化性樹脂中に、銅又はスズ等を含む半田合金材料からなる複数の半田粒子を均一に分散させたペースト状の材料をＸ方向端子１１１及びＹ方向端子１１２に塗布し、ペースト状の材料に第１のＬＥＤ電極２０１及び第２のＬＥＤ電極２０２を重ねることにより形成される。
ここで、複数の半田粒子を含むペースト状の材料の塗布は、スクリーン印刷法により行ってもよいし、メッシュマスクを用いた印刷法により行ってもよいし、インクジェット法により行ってもよい。 The first bonding portion 211, the second bonding portion 212a, and the second bonding portion 212b are formed by self-cohesive solder.
The first joint 211, the second joint 212a, and the second joint 212b are formed by uniformly dispersing a plurality of solder particles made of a solder alloy material containing copper, tin, etc. in a thermosetting resin. It is formed by applying a paste-like material to the X-direction terminal 111 and the Y-direction terminal 112, and overlapping the first LED electrode 201 and the second LED electrode 202 on the paste-like material.
Here, the paste-like material containing a plurality of solder particles may be applied by a screen printing method, a printing method using a mesh mask, or an inkjet method.

そして、半田粒子を含むペースト状の材料が塗布されたＸ方向端子１１１及びＹ方向端子１１２には、所定の精度で位置合わせされた第１のＬＥＤ電極２０１及び第２のＬＥＤ電極２０２を含むＬＥＤ素子２００が密着される。
ここでは、異方性導電膜による接合法と同様の熱圧着装置が用いられ、サブ画素１１０とＬＥＤ素子２００とが互いに接近する方向に、所定の温度及び時間で加圧される。
ここで、加熱とともに加圧する場合には、加圧は、例えば１５０℃まで加熱して１５０℃で１５分間行う。
ただし、本発明はこれに限定されるものではなく、加熱前に加圧してもよい。
このように加熱して加圧されると、熱硬化性樹脂及び複数の半田粒子は溶融し、溶融した複数の半田粒子は凝集しつつ、Ｘ方向端子１１１及び第１のＬＥＤ電極２０１、並びにＹ方向端子１１２及び第２のＬＥＤ電極２０２に引き寄せられていく。
そして、最終的には、自己凝集して金属結合した半田によって、Ｘ方向端子１１１と第１のＬＥＤ電極２０１との間には第１の接合部２１１が形成され、Ｙ方向端子１１２と第２のＬＥＤ電極２０２との間には第２の接合部２１２ａ及び第２の接合部２１２ｂが形成される。
また、配線基板１０とＬＥＤ素子２００との間には溶融した熱硬化性樹脂が集まり、配線基板１０とＬＥＤ素子２００とが熱圧着により接着されて放冷される。 The X-direction terminal 111 and the Y-direction terminal 112 coated with a paste-like material containing solder particles are provided with an LED including a first LED electrode 201 and a second LED electrode 202 that are aligned with a predetermined precision. Element 200 is brought into close contact.
Here, a thermocompression bonding device similar to the bonding method using an anisotropic conductive film is used, and pressure is applied at a predetermined temperature and time in a direction in which the sub-pixel 110 and the LED element 200 approach each other.
Here, in the case of pressurizing with heating, the pressurizing is performed, for example, by heating to 150° C. and at 150° C. for 15 minutes.
However, the present invention is not limited to this, and pressure may be applied before heating.
When heated and pressurized in this way, the thermosetting resin and the plurality of solder particles are melted, and while the plurality of melted solder particles are agglomerated, the X direction terminal 111, the first LED electrode 201, and the Y It is attracted to the direction terminal 112 and the second LED electrode 202.
Finally, by the solder that self-agglomerates and metallurgically bonds, a first joint 211 is formed between the X-direction terminal 111 and the first LED electrode 201, and a first joint 211 is formed between the Y-direction terminal 112 and the second LED electrode 201. A second bonding portion 212a and a second bonding portion 212b are formed between the LED electrode 202 and the LED electrode 202.
Moreover, the molten thermosetting resin gathers between the wiring board 10 and the LED element 200, and the wiring board 10 and the LED element 200 are bonded together by thermocompression bonding and allowed to cool.

このようにして、Ｘ方向端子１１１と第１のＬＥＤ電極２０１とが、第１の接合部２１１によって選択的に金属結合されることで電気的に接続され、Ｙ方向端子１１２と第２のＬＥＤ電極２０２とが、第２の接合部２１２ａ，２１２ｂによって選択的に金属結合されることで電気的に接続される。
また、配線基板１０とＬＥＤ素子２００とは、Ｘ方向端子１１１と第１の接合部２１１との間の金属結合と、第１のＬＥＤ電極２０１と第１の接合部２１１との間の金属結合と、Ｙ方向端子１１２と第２の接合部２１２ａ，２１２ｂとの間の金属結合と、第２のＬＥＤ電極２０２と第２の接合部２１２ａ，２１２ｂとの間の金属結合と、熱硬化性樹脂による接着と、により、機械的に接合される。
このように、自己凝集半田を用いることで、接合を高精度に行うことができるため、高精細なマイクロＬＥＤ表示装置を実現することができ、実装工程を簡略化することができる。 In this way, the X-direction terminal 111 and the first LED electrode 201 are electrically connected by being selectively metal-bonded by the first joint 211, and the Y-direction terminal 112 and the second LED electrode The electrode 202 is electrically connected to the electrode 202 through selective metal bonding through the second joints 212a and 212b.
Furthermore, the wiring board 10 and the LED element 200 have a metal bond between the X direction terminal 111 and the first joint 211 and a metal bond between the first LED electrode 201 and the first joint 211. , a metal bond between the Y-direction terminal 112 and the second joint portions 212a, 212b, a metal bond between the second LED electrode 202 and the second joint portions 212a, 212b, and a thermosetting resin. It is mechanically joined by adhesion and.
In this way, by using self-agglomerated solder, bonding can be performed with high precision, so a high-definition micro LED display device can be realized, and the mounting process can be simplified.

なお、このような自己凝集半田としては、例えば、商品名「リフロー実装異方性導電ペーストエポウェル ＡＰシリーズ」（積水化学工業株式会社製）又は商品名「Low-Temperature-Curable conductive」（日立化成株式会社製）等を用いることができる。 Examples of such self-cohesive solder include the product name "Reflow Mounting Anisotropic Conductive Paste Epowel AP Series" (manufactured by Sekisui Chemical Co., Ltd.) or the product name "Low-Temperature-Curable Conductive" (manufactured by Hitachi Chemical Co., Ltd.). Co., Ltd.) etc. can be used.

なお、本実施形態において、難半田性配線１０１ａ上にも隔壁１１４が設けられていてもよい。
図６は、本実施形態におけるＬＥＤ素子実装前のサブ画素１１０Ａの構成を示す他の例の上面図である。
図６に示すサブ画素１１０Ａは、図３に示すサブ画素１１０に対して、難半田性配線１０１ａ上に隔壁１１４が設けられた点が異なり、その他の構成は図３に示すサブ画素１１０と同じである。 In addition, in this embodiment, the partition wall 114 may be provided also on the difficult-to-solder wiring 101a.
FIG. 6 is a top view of another example of the configuration of the sub-pixel 110A before mounting the LED element in this embodiment.
The sub-pixel 110A shown in FIG. 6 differs from the sub-pixel 110 shown in FIG. 3 in that a partition wall 114 is provided on the hard-to-solder wiring 101a, and the other configuration is the same as the sub-pixel 110 shown in FIG. It is.

図７は、図６のＡ－Ａ’におけるＬＥＤ素子２００実装後の断面図である。
図８は、図６のＢ－Ｂ’におけるＬＥＤ素子２００実装後の断面図である。
図７，８に示すように、第１の領域１１２ａと第２の領域１１２ｂとの間に設けられた隔壁１１４によれば、第２の接合部２１２ａと第２の接合部２１２ｂとの間の短絡を防止することができる。 FIG. 7 is a cross-sectional view taken along line AA' in FIG. 6 after the LED element 200 is mounted.
FIG. 8 is a cross-sectional view taken along line BB' in FIG. 6 after the LED element 200 is mounted.
As shown in FIGS. 7 and 8, according to the partition wall 114 provided between the first region 112a and the second region 112b, there is a gap between the second joint portion 212a and the second joint portion 212b. Short circuits can be prevented.

隔壁１１４は、隔壁１１３と同一材料で同一工程により形成すればよい。
なお、隔壁１１４は、隔壁１１３に連続して上面においてＴ字状又は十字形状となるように設けられていてもよい。 The partition wall 114 may be formed from the same material as the partition wall 113 and by the same process.
Note that the partition wall 114 may be provided continuously from the partition wall 113 so as to have a T-shape or a cross shape on the upper surface.

なお、上述の説明において、第１の接合部２１１及び第２の接合部２１２ａ，２１２ｂは、自己凝集半田によって形成されているが、本発明はこれに限定されるものではない。
配線基板とＬＥＤ素子との接合は、自己凝集半田ではない半田により行ってもよい。
ただし、配線基板とＬＥＤ素子との接合を自己凝集半田ではない半田により行う場合には、上述の隔壁１１４を設ける。 Note that in the above description, the first bonding portion 211 and the second bonding portions 212a, 212b are formed of self-agglomerated solder, but the present invention is not limited to this.
The wiring board and the LED element may be bonded using solder other than self-agglomerated solder.
However, when the wiring board and the LED element are bonded using solder other than self-agglomerated solder, the above-mentioned partition wall 114 is provided.

なお、上述の説明におけるＸ方向端子１１１とＹ方向端子１１２との間に配された隔壁１１３は、第１の接合部２１１と第２の接合部２１２ａ及び第２の接合部２１２ｂの双方との間の絶縁性を確保することができるのであれば、設けられていなくてもよい。 Note that the partition wall 113 disposed between the X-direction terminal 111 and the Y-direction terminal 112 in the above description connects the first joint 211 with both the second joint 212a and the second joint 212b. As long as insulation between them can be ensured, it may not be provided.

なお、上述の説明では、配線基板上にマトリクス状に配される素子としてＬＥＤ素子を例示して本実施形態に係るマイクロＬＥＤ表示装置について説明したが、本発明はこれに限定されるものではない。
ミニＬＥＤ表示装置も本発明に含まれる。
また、配線基板上にＬＥＤ素子以外の素子がマトリクス状に配されるその他の装置も本発明に含まれる。 Note that in the above description, the micro LED display device according to the present embodiment has been explained by exemplifying LED elements as elements arranged in a matrix on a wiring board, but the present invention is not limited thereto. .
Mini LED displays are also included in the invention.
The present invention also includes other devices in which elements other than LED elements are arranged in a matrix on a wiring board.

なお、上述の説明では、隔壁１１３は、上面図においてＹ方向に延在した形状であるが、本発明はこれに限定されるものではなく、隔壁１１３の上面形状は特定のものに限定されるものではない。 In the above description, the partition wall 113 has a shape extending in the Y direction in the top view, but the present invention is not limited to this, and the top surface shape of the partition wall 113 is limited to a specific shape. It's not a thing.

以上説明したように、本実施形態によれば、実装される素子の電極によりブリッジ接続を行うことで、ブリッジ接続を形成するための工程を省略することが可能となり、マトリクス状に素子が配置される配線基板の縦横の配線の短絡を防止可能な構造を簡略な作製工程で実現することができる。 As explained above, according to this embodiment, by making a bridge connection using the electrodes of the elements to be mounted, it is possible to omit the process for forming a bridge connection, and the elements are arranged in a matrix. A structure that can prevent short circuits between vertical and horizontal wiring of a wiring board can be realized through a simple manufacturing process.

（実施形態２）
実施形態１では、配線の一部を難半田性配線により形成した形態について説明したが、本発明はこれに限定されるものではない。
本実施形態では、難半田性配線を用いない例について説明する。 (Embodiment 2)
In Embodiment 1, a mode in which a part of the wiring is formed by a difficult-to-solder wiring has been described, but the present invention is not limited to this.
In this embodiment, an example will be described in which hard-to-solder wiring is not used.

図９は、本実施形態におけるＬＥＤ素子実装前のサブ画素１１０Ｂの構成を示す上面図である。
図９に示すサブ画素１１０Ｂは、配線１０１に代えて難半田性配線１０１ａを含まない配線１０１Ａが用いられ、サブ画素１１０において難半田性配線１０１ａが配置される部分の配線１０１Ａ上に配線１０１Ａを覆う絶縁物１１５が設けられている点が図３に示すサブ画素１１０と異なり、その他の構成は図３に示すサブ画素１１０と同じである。 FIG. 9 is a top view showing the configuration of the sub-pixel 110B before mounting the LED element in this embodiment.
In the sub-pixel 110B shown in FIG. 9, a wiring 101A that does not include the hard-to-solder wiring 101a is used instead of the wiring 101, and the wiring 101A is placed on the wiring 101A in the portion of the sub-pixel 110 where the hard-to-solder wiring 101a is arranged. This sub-pixel 110 differs from the sub-pixel 110 shown in FIG. 3 in that a covering insulator 115 is provided, and the other configurations are the same as the sub-pixel 110 shown in FIG. 3.

図１０は、図９のＡ－Ａ’におけるＬＥＤ素子２００実装後の断面図である。
図１１は、図９のＢ－Ｂ’におけるＬＥＤ素子２００実装後の断面図である。
図１０，１１に示すように、配線１０１Ａ上の第１の領域１１２ａと第２の領域１１２ｂとの間に設けられた絶縁物１１５によれば、配線１０１Ａへの半田の付着を防止することができるとともに、第２の接合部２１２ａと第２の接合部２１２ｂとの間の短絡を防止することができる。 FIG. 10 is a cross-sectional view taken along line AA' in FIG. 9 after the LED element 200 is mounted.
FIG. 11 is a cross-sectional view taken along line BB' in FIG. 9 after the LED element 200 is mounted.
As shown in FIGS. 10 and 11, the insulator 115 provided between the first region 112a and the second region 112b on the wiring 101A can prevent solder from adhering to the wiring 101A. At the same time, it is possible to prevent a short circuit between the second joint portion 212a and the second joint portion 212b.

絶縁物１１５は、実施形態１の隔壁１１３及び隔壁１１４と同様に形成すればよい。
ただし、絶縁物１１５は、配線１０１Ａへの半田の付着を防止するために、配線１０１ＡよりもＹ方向の幅を広くすることで、第１の領域１１２ａと第２の領域１１２ｂとの間における配線１０１Ａの全面を覆うように形成される。 The insulator 115 may be formed in the same manner as the partition walls 113 and 114 in the first embodiment.
However, in order to prevent solder from adhering to the wiring 101A, the insulator 115 is made wider in the Y direction than the wiring 101A, so that the wiring between the first region 112a and the second region 112b is It is formed to cover the entire surface of 101A.

図１２は、本実施形態におけるＬＥＤ素子実装前のサブ画素１１０Ｃの構成を示す他の例の上面図である。
図１２に示すサブ画素１１０Ｃは、絶縁物１１５に代えて、配線１０１Ａを覆う絶縁物１１６が設けられた点が異なり、その他の構成は図１０に示すサブ画素１１０Ｂと同じである。 FIG. 12 is a top view of another example of the configuration of the sub-pixel 110C before mounting the LED element in this embodiment.
The sub-pixel 110C shown in FIG. 12 differs in that an insulator 116 covering the wiring 101A is provided instead of the insulator 115, and the other configuration is the same as the sub-pixel 110B shown in FIG.

図１３は、図１２のＡ－Ａ’におけるＬＥＤ素子２００実装後の断面図である。
図１４は、図１２のＢ－Ｂ’におけるＬＥＤ素子２００実装後の断面図である。
図１３，１４に示すように、第１の領域１１２ａと第２の領域１１２ｂとの間及びＸ方向端子１１１とＹ方向端子１１２との間に設けられた上面において十字形状の絶縁物１１６によれば、第２の接合部２１２ａと第２の接合部２１２ｂとの間の短絡を防止することができるのみならず、実施形態１の隔壁１１３と同様に、第１の接合部２１１と第２の接合部２１２ａ又は第１の接合部２１１と第２の接合部２１２ｂとの間の短絡を防止することができる。 FIG. 13 is a cross-sectional view taken along line AA' in FIG. 12 after the LED element 200 is mounted.
FIG. 14 is a cross-sectional view taken along line BB' in FIG. 12 after the LED element 200 is mounted.
As shown in FIGS. 13 and 14, a cross-shaped insulator 116 is formed on the upper surface provided between the first region 112a and the second region 112b and between the X-direction terminal 111 and the Y-direction terminal 112. For example, it is possible not only to prevent a short circuit between the second joint part 212a and the second joint part 212b, but also to prevent the short circuit between the first joint part 211 and the second joint part 212b, similar to the partition wall 113 of the first embodiment. A short circuit between the joint portion 212a or the first joint portion 211 and the second joint portion 212b can be prevented.

絶縁物１１６は、実施形態１の隔壁１１３及び隔壁１１４と同様に形成すればよい。
また、絶縁物１１６の形状はＸ方向における短絡とＹ方向における短絡の双方を防止することができれば、図示する形状に限定されるものではない。 The insulator 116 may be formed in the same manner as the partition walls 113 and 114 in the first embodiment.
Further, the shape of the insulator 116 is not limited to the illustrated shape as long as it can prevent both short circuits in the X direction and short circuits in the Y direction.

なお、本発明は、上述の実施形態に限定されるものではなく、上述の構成に対して、構成要素の付加、削除又は転換を行った様々な変形例も含むものとする。 Note that the present invention is not limited to the above-described embodiments, and includes various modifications in which components are added, deleted, or converted to the above-described configuration.

１０ 配線基板
１１ 制御部
１２，１３ 駆動部
１００ マトリクス部
１０１，１０１Ａ，１０２ 配線
１０１ａ 難半田性配線
１１０，１１０Ａ，１１０Ｂ，１１０Ｃ サブ画素
１１１ Ｘ方向端子
１１２ Ｙ方向端子
１１２ａ 第１の領域
１１２ｂ 第２の領域
１１３，１１４ 隔壁
１１５，１１６ 絶縁物
２００ ＬＥＤ素子
２０１ 第１のＬＥＤ電極
２０２ 第２のＬＥＤ電極
２１１ 第１の接合部
２１２ａ，２１２ｂ 第２の接合部 10 Wiring board 11 Control section 12, 13 Drive section 100 Matrix section 101, 101A, 102 Wiring 101a Difficult to solder wiring 110, 110A, 110B, 110C Sub-pixel 111 X-direction terminal 112 Y-direction terminal 112a First region 112b Second region 113, 114 partition 115, 116 insulator 200 LED element 201 first LED electrode 202 second LED electrode 211 first joint 212a, 212b second joint

Claims (4)

第１方向に延在する配線と該第１方向に交差する第２方向に延在する配線とが設けられた配線基板に複数のＬＥＤ素子が実装されたマイクロＬＥＤ表示装置であって、
前記第１方向に延在する配線に接続する端子の各々が、
第１領域と、
前記第１領域と間隔を空けて設けられた第２領域と、を備え、
前記第２方向に延在する配線が、前記第１領域と前記第２領域との間を通り、
前記第１方向に延在する配線に接続する端子及び前記第２方向に延在する配線に接続する端子の各々には、自己凝集半田によりＬＥＤ素子の電極が接合されるマイクロＬＥＤ表示装置。 A micro LED display device in which a plurality of LED elements are mounted on a wiring board provided with wiring extending in a first direction and wiring extending in a second direction crossing the first direction,
Each of the terminals connected to the wiring extending in the first direction,
a first area;
a second region spaced apart from the first region;
A wiring extending in the second direction passes between the first region and the second region,
A micro LED display device in which an electrode of an LED element is bonded to each of the terminal connected to the wiring extending in the first direction and the terminal connected to the wiring extending in the second direction by self-agglomerated solder. 前記第２方向に延在する配線は、前記第１領域と前記第２領域との間では少なくとも上面の全部が難半田性材料により形成されている請求項１に記載のマイクロＬＥＤ表示装置。 2. The micro LED display device according to claim 1, wherein at least the entire upper surface of the wiring extending in the second direction is formed of a difficult-to-solder material between the first region and the second region. 前記第２方向に延在する配線は、銅と、前記難半田性材料と、により形成され、
前記難半田性材料は、アルミニウム、チタン、モリブデン又はＩＴＯである請求項２に記載のマイクロＬＥＤ表示装置。 The wiring extending in the second direction is formed of copper and the difficult-to-solder material,
3. The micro LED display device according to claim 2, wherein the difficult-to-solder material is aluminum, titanium, molybdenum, or ITO. 前記第１方向に延在する配線に接続する端子と前記第２方向に延在する配線に接続する端子との間には絶縁性の隔壁が設けられている請求項１から３のいずれか一項に記載のマイクロＬＥＤ表示装置。 Any one of claims 1 to 3, wherein an insulating partition is provided between a terminal connected to the wiring extending in the first direction and a terminal connected to the wiring extending in the second direction. The micro LED display device described in .
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JP2015198145A (en) 2014-03-31 2015-11-09 ソニー株式会社 Mounting board and electronic device
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