JP7364437B2 - Temperature measuring device and temperature measuring method - Google Patents

Description

The present invention relates to a temperature measuring device and a temperature measuring method that measure temperature using a material that emits light with ultraviolet light (for example, silicon carbide).

In manufacturing semiconductor devices, for example, electrical characteristics may be measured while applying temperature stress. In this case, it is necessary to accurately control the applied temperature, and it is practiced to maintain the temperature at a desired state while measuring the temperature with a temperature measuring means (Patent Document 1).

As the temperature measuring means, it is conceivable to use a temperature measuring means in which a device or element having a specific structure is brought into contact with the measuring section. It is also possible to use a non-contact temperature measuring means using infrared light, such as a radiation thermometer.

Temperature measuring means that bring equipment, elements, etc. into contact with a measuring part have limitations on the objects that can be measured and the environments in which they can be used. Furthermore, non-contact temperature measuring means using infrared light cannot be used in places where an infrared light source is present, such as when there is a heat source nearby.

Japanese Patent Application Publication No. 2016-99300

The present invention has been made in view of the above circumstances, and provides a temperature measuring device and a temperature measuring method capable of measuring the temperature of an object to be measured without being subject to restrictions of the object to be measured or the environment in which it is used. The purpose is to

To achieve the above object, the temperature measuring device of the present invention according to claim 1 includes: silicon carbide (SiC) that is brought into contact with a detection target; and ultraviolet light that irradiates the silicon carbide (SiC) with ultraviolet light in an ultraviolet wavelength range. By inputting light emission data of the silicon carbide (SiC) emitted by the ultraviolet light irradiated by the irradiation means and the ultraviolet light irradiation means, and estimating the temperature of the silicon carbide (SiC) based on the light emission data. The apparatus is characterized by comprising: temperature detection control means for measuring the temperature of the detection target.

In the present invention according to claim 1, silicon carbide (SiC) brought into contact with a detection target is irradiated with ultraviolet light (light with a wavelength of 10 nm to 400 nm) from an ultraviolet light irradiation means (for example, a laser, an LED), Light emission data of silicon carbide (SiC) is input to the temperature detection control means. The temperature detection control means estimates the temperature of silicon carbide (SiC) based on the luminescence data, and directly measures the temperature of the detection target. For example, ultraviolet light can be irradiated with an energy density of 0.01 W/cm ² or more.
Temperature can be measured using silicon carbide (SiC), which has various crystal structures such as hexagonal (2H, 4H, 6H), cubic (3C), and rhombohedral (15R), as a material. can. Light emission can be promoted by incorporating a substance (for example, nitrogen) that promotes light emission into silicon carbide (SiC).

It is preferable that the material is a powder with a particle size of 1 nm or more, and the powder is compressed and mixed with the measurement object, or it is brought into close contact with the object directly, or through an inclusion such as a covering member. When the object to be measured is a fluid, it is preferable to mix the material with the fluid as a powder having a particle size of 1 nm or more.

This makes it possible to measure the temperature of the object to be measured without being subject to restrictions from the object to be measured or the environment in which it is used.

It is known that by incorporating nitrogen into silicon carbide, the luminescence intensity obtained when irradiated with light having a wavelength in the ultraviolet region is proportional to the irradiation energy density. Specifically, by making silicon carbide contain nitrogen in the range of, for example, 10 ¹⁸ /cm ³ to 10 ¹⁹ /cm ³ , the luminescence intensity obtained when irradiated with light in the ultraviolet region wavelength increases with the irradiation energy density. is known to depend on

For this reason, silicon carbide preferably contains nitrogen in a range of, for example, 10 ¹⁸ /cm ³ to 10 ¹⁹ /cm ³ .

Further, in the temperature measuring device of the present invention according to claim 2 , in the temperature measuring device according to claim 1 , the temperature detection control means includes a temperature deriving means for deriving the temperature based on the light emission intensity distribution as the light emission data. It is characterized by having.

In the present invention according to claim 2 , the temperature is derived by the temperature derivation means of the temperature detection control means based on the emission intensity distribution. For example, the shapes of the emission intensity distributions are compared, and the temperature is derived based on the degree of approximation of the shapes. Specific examples of comparison targets for emission intensity distribution include the relationship between the wavelength (peak wavelength) of any emission intensity and temperature, the relationship between the ratio of arbitrary multiple emission intensities and temperature, and the relationship between the temperature and the ratio of arbitrary emission intensities. Examples include the relationship between the half width of the intensity distribution and temperature, and the relationship between peak area and temperature.

Further, in the temperature measuring device of the present invention according to claim 3 , in the temperature measuring device according to claim 2 , the temperature detection control means detects a light emission intensity distribution according to a plurality of temperature parameters as a comparative light emission intensity distribution. The temperature deriving means calculates the temperature based on the luminescence intensity distribution of the input luminescence data and the comparative luminescence intensity distribution stored in the luminescence intensity distribution storage means. It is characterized by being derived.

In the present invention according to claim 3 , a comparison luminescence intensity distribution according to a plurality of temperature parameters is stored in the luminescence intensity distribution storage means, and the luminescence intensity distribution of the input luminescence data and the comparison luminescence intensity distribution are compared to determine the temperature. is derived. That is, the temperature is estimated by comparing the data of the luminescence intensity distribution stored in advance (comparison luminescence intensity distribution) with the actual luminescence intensity distribution.

When comparing data of a pre-stored emission intensity distribution (comparison emission intensity distribution) and an actual emission intensity distribution, for example, the shapes of the emission intensity distributions are compared. Specific forms of comparison include comparison of the status of emission intensity at arbitrary wavelengths, comparison of the status of half-width of the emission intensity distribution, and comparison of the status of multiple peak areas based on multiple density distribution functions of the emission intensity distribution. Preferably, a comparative situation is applied.

Further, in the temperature measuring device of the present invention according to claim 4 , in the temperature measuring device according to claim 3 , the temperature detection control means receives the light emission data of the silicon carbide (SiC) , and the input light emission data is inputted. It has an actual intensity ratio deriving means for calculating an actual emission intensity ratio which is a ratio of emission intensities at a plurality of wavelengths in the data, and the emission intensity distribution storage means stores a plurality of comparative emission intensity distributions for each of a plurality of temperatures. The ratio of the emission intensity of the wavelength is stored as the emission intensity ratio , and the temperature derivation means calculates the emission intensity ratio stored in the emission intensity distribution storage means and the actual emission intensity ratio derived by the actual intensity ratio derivation means. are compared, and a temperature corresponding to the actual emission intensity ratio is derived.

In the present invention according to claim 4 , the actual intensity ratio deriving means calculates the actual emission intensity ratio, which is the ratio of the emission intensities at a plurality of wavelengths. The emission intensity distribution storage means stores, for each of a plurality of temperatures, the proportions of emission intensities at a plurality of wavelengths in a comparative emission intensity distribution as emission intensity proportions. The temperature deriving means compares the light emission intensity ratio and the actual light emission intensity ratio, and derives a temperature corresponding to the actual light emission intensity ratio.

In other words, the relationship between the ratio of emission intensity at multiple wavelengths, for example, two wavelengths, and temperature is converted into data, and compared with the ratio of the ratio of emission intensity at two wavelengths in the actual emission intensity distribution. be done. As a result of the comparison, it is estimated that the temperature at the approximate rate is the actual temperature.

For example, the ratio of the emission intensity at a wavelength near 400 nm and the emission intensity at a wavelength near 420 nm is converted into data for each temperature, and is stored in advance as a graph of the relationship between the emission intensity ratio and temperature. In the actual emission intensity distribution, the ratio of the emission intensity at a wavelength near 400 nm and the emission intensity at a wavelength near 420 nm is determined, and based on pre-stored data, the ratio of the emission intensity to the obtained emission intensity ratio is calculated. Temperature is derived.

Further, in the temperature measuring device of the present invention according to claim 5 , in the temperature measuring device according to claim 3, the temperature detection control means receives the light emission data of the silicon carbide (SiC) , and It has an actual half-width derivation means for calculating the actual half-width of the emission intensity distribution at a plurality of wavelengths in the data, and the emission intensity distribution storage means calculates the actual half-width of the emission intensity distribution at a plurality of wavelengths for each of the plurality of temperatures. The half-value width is stored as a comparative half-value width, and the temperature deriving means compares the comparative half-value width stored in the emission intensity distribution storage means and the half-value width derived by the actual half-value width deriving means, and calculates the value according to the half-value width. It is characterized in that the temperature is derived.

In the present invention according to claim 5 , the actual half-width deriving means calculates the half-width of the emission intensity distribution at a plurality of wavelengths. In the emission intensity distribution storage means, half-value widths of comparative emission intensity distributions at a plurality of wavelengths are stored as comparative half-value widths for each of a plurality of temperatures. The temperature deriving means compares the comparative half-width and the actual half-width, and derives a temperature corresponding to the actual half-width.

That is, the relationship between the comparison half-width and temperature is converted into data, and the actual half-width is compared with the comparison half-width that has been converted into data. As a result of the comparison, it is estimated that the temperature at the approximate half-width is the actual temperature.

The temperature measuring method of the present invention according to claim 6 for achieving the above object irradiates silicon carbide (SiC: SiC with a crystalline structure) brought into contact with a detection target with electromagnetic waves in the ultraviolet wavelength range, and emits light by the electromagnetic waves. The temperature of the detection target is measured by estimating the temperature of the silicon carbide based on the state of the emission intensity of the silicon carbide.

In the present invention according to claim 6 , light with a wavelength in the ultraviolet region (light with a wavelength of 10 nm to 400 nm) is applied to silicon carbide (silicon carbide single crystal, SiC: SiC with a crystal structure) to emit light from the silicon carbide single crystal. Measure the temperature of the detection target based on the intensity situation. For example, based on the distribution of luminescence intensity (luminescence intensity distribution), temperature can be estimated by comparing it with data obtained in advance for each temperature, or temperature can be calculated based on data on the relationship between luminescence intensity and temperature. This allows the temperature of the silicon carbide single crystal to be detected.

Therefore, it becomes possible to measure the temperature of the object to be measured without being subject to restrictions from the object to be measured or the environment in which it is used.

The temperature measuring device of the present invention can measure the temperature of an object to be measured without being subject to restrictions from the object to be measured or the environment in which it is used.
The temperature measurement method of the present invention makes it possible to measure the temperature of an object to be measured without being subject to restrictions from the object to be measured or the environment in which it is used.

1 is a schematic diagram of a temperature measuring device according to a first embodiment of the present invention. FIG. 2 is a schematic diagram of a temperature measuring device according to a second embodiment of the present invention. FIG. 3 is a block diagram of temperature detection control means. It is a graph of comparative luminescence intensity distribution. It is a graph of comparative luminescence intensity distribution. It is a graph of comparative luminescence intensity distribution. It is a graph showing the relationship between emission intensity ratio and temperature. It is a graph showing the relationship between half width and temperature. FIG. 2 is a conceptual diagram for explaining peak area.

FIG. 1 shows a schematic configuration of a temperature measuring device according to a first embodiment of the present invention, FIG. 2 shows a schematic configuration of a temperature measuring device according to a second embodiment of the present invention, and FIG. 3 shows a temperature detection control means. The block configuration of is shown.

A first embodiment will be described based on FIG.

As shown in FIG. 1, silicon carbide (SiC: SiC having a crystal structure) 2 as a material is attached to a wall 1 of a structure as a detection target. Silicon carbide 2 is powdered with a particle size of 1 nm or more, and the powder is compressed and adhered to wall 1.

Depending on the structure of the object to be detected, powder having a particle size of 1 nm or more may be mixed into the object to be measured. As the silicon carbide 2, silicon carbide having various crystal structures such as hexagonal (2H, 4H, 6H), cubic (3C), and rhombohedral (15R) is applied.

Silicon carbide 2 is irradiated with ultraviolet light in the ultraviolet wavelength range (light with a wavelength of 10 nm to 400 nm) from ultraviolet light irradiation means 3 at an intensity with an energy density of 0.01 W/cm ² or more, for example. Silicon carbide 2 emits light by ultraviolet light irradiated from ultraviolet light irradiation means 3 . The light emission data of silicon carbide 2 is input to temperature detection control means 4 .

Temperature detection control means 4 estimates the temperature of silicon carbide 2 based on the light emission data. Then, the temperature of wall 1 (structure) is measured based on the estimated temperature of silicon carbide 2.

As a result, it is possible to measure the temperature of the wall 1 of a complex structure or a structure that is difficult for workers to access, and the temperature of the object to be measured can be measured without being subject to restrictions from the object to be measured or the environment in which it is used. becomes possible.

Silicon carbide 2 contains a substance (for example, nitrogen) that promotes luminescence. By containing nitrogen, the luminescence intensity obtained when irradiated with light having a wavelength in the ultraviolet region is promoted in proportion to the irradiation energy density.

By containing nitrogen in silicon carbide 2 in a range of, for example, 10 ¹⁸ /cm ³ to 10 ¹⁹ /cm ³ , the luminescence intensity obtained when irradiated with light in the ultraviolet region wavelength becomes dependent on the irradiation energy density. can be promoted.

In the embodiment shown in FIG. 1, an example was given in which one contact member in the shape of compression-molded silicon carbide 2 powder was brought into close contact with the wall 1, but a plurality of contact members were It is also possible to grasp the temperature distribution within a desired plane of the wall 1 by measuring the temperature of each of the plurality of contact members.

Further, in the embodiment shown in FIG. 1, an example is shown in which the contact member is brought into close contact with the surface of one wall 1, but it can be configured in any shape in the height direction, width direction, depth direction, etc. The temperature distribution in the three-dimensional state of the complex structure can be determined by attaching an adhesive member made of silicon carbide 2 powder to any part of the complex-shaped structure and measuring the temperature of each part. It is also possible to understand.

A second embodiment will be described based on FIG. 2.

As shown in FIG. 2, silicon carbide (SiC: SiC with a crystalline structure) 9 as a material is mixed in the fluid 8 (e.g., boiler feed water of a power plant) inside the piping 7 as the detection target. has been done. Silicon carbide 9 is made into powder with a particle size of 1 nm or more, and the powder is mixed into fluid 8 in the form of granules.

Silicon carbide 9 is silicon carbide having various crystal structures such as hexagonal (2H, 4H, 6H), cubic (3C), and rhombohedral (15R).

The silicon carbide 9 mixed in the fluid 8 is irradiated with ultraviolet light in the ultraviolet wavelength range (light with a wavelength of 10 nm to 400 nm) from the ultraviolet light irradiation means 3, for example, with an energy density of 0.01 W/cm ² or more. irradiated with. Silicon carbide 9 emits light by ultraviolet light irradiated from ultraviolet light irradiation means 3 .

The light emission data of silicon carbide 9 is input to temperature detection control means 4, and temperature detection control means 4 estimates the temperature of silicon carbide 9 based on the light emission data. Then, the temperature of fluid 8 is measured based on the estimated temperature of silicon carbide 9.

As a result, the temperature of the fluid 8 inside the pipe 7 can be directly measured without installing a temperature detection device in the pipe 7, and the temperature of the fluid 8 inside the pipe 7 can be directly measured. It becomes possible to measure the temperature of objects.

Silicon carbide 9 contains a substance (for example, nitrogen) that promotes luminescence. By containing nitrogen, the luminescence intensity obtained when irradiated with light having a wavelength in the ultraviolet region is promoted in proportion to the irradiation energy density.

For example, by incorporating nitrogen in the silicon carbide 2 in the range of 10 ¹⁸ /cm ³ to 10 ¹⁹ /cm ³ , the luminescence intensity obtained when irradiated with light in the ultraviolet region wavelength can be increased to the square of the irradiation energy density. can be promoted in proportion to

In the embodiment shown in FIG. 2, the temperature is measured by irradiating one silicon carbide 9 with ultraviolet light. It is possible to measure the temperature by irradiating the tube 9 with ultraviolet light and grasp the temperature distribution of the fluid inside the pipe 7 in a desired range.

The temperature detection control means 4 will be specifically explained based on FIG.

As shown in FIG. 3, the temperature detection control means 4 has a temperature derivation means 11 that derives a temperature based on the luminescence intensity distribution as luminescence data. Further, the temperature detection control means 4 is configured to store a light emission intensity distribution corresponding to a plurality of temperature parameters (for example, room temperature, 100° C., 200° C., 300° C., 400° C., 480° C.) as a comparative light emitting intensity distribution. It has intensity distribution storage means 12.

Furthermore, the temperature detection control means 4 receives the luminescence data of silicon carbide 9 and detects the luminescence intensity P1 at 380 nm (wavelength near 400 nm) and the luminescence intensity P2 at 420 nm, which are two wavelengths in the input luminescence data. It has an actual intensity ratio deriving means 13 for determining the actual emission intensity ratio (P2/P1) which is the ratio of .

The emission intensity distribution storage means 12 stores the emission intensity P1 at 380 nm, which is the two wavelengths of the comparative emission intensity distribution, for each of a plurality of temperatures (for example, room temperature, 100°C, 200°C, 300°C, 400°C, and 480°C). , the ratio of the emission intensity P2 at 420 nm is stored as the emission intensity ratio (P2/P1). The temperature situation with respect to the emission intensity ratio (P2/P1) is then mapped (see FIG. 7, which will be described later).

The temperature deriving means 11 calculates the luminous intensity ratio stored in the luminous intensity distribution storage means 12 {map of temperature situation relative to luminous intensity ratio (P2/P1)} and the actual luminous intensity derived by the actual intensity ratio deriving means 13. The ratios (P2/P1) are compared, and the temperature corresponding to the actual luminescence intensity ratio (P2/P1) is read (derived) from the map. That is, the temperature is estimated by comparing the data of the luminescence intensity distribution stored in advance (comparison luminescence intensity distribution) with the actual luminescence intensity distribution.

In other words, the ratio of the emission intensities P1 and P2 at multiple (two) wavelengths, 380 nm and 420 nm (P2/P1), and the temperature (for example, room temperature, 100°C, 200°C, 300°C, 400°C, 480°C) C) is converted into data, and the ratio (P2/P1) of the emission intensity at two wavelengths (380 nm, 420 nm) in the actual emission intensity distribution is compared with the dataized ratio.

As a result of the comparison, the temperature in the approximated proportion is read out from the map and estimated to be the actual temperature (the temperature is derived based on the degree of approximation of the shapes).

A specific example of mapping the temperature situation with respect to the emission intensity ratio (P2/P1) will be explained based on FIGS. 4 to 7.

4 to 6 show graphs of comparative emission intensity distributions (relationship between emission intensity and wavelength) stored in the emission intensity distribution storage means 12.

Figure 4(a) is a graph of comparative luminescence intensity distribution (relationship between luminous intensity and wavelength) at room temperature, Figure 4(b) is a graph of comparative luminous intensity distribution at 100°C, and Figure 5(a) is a graph of comparative luminous intensity distribution at 200°C. Graph of luminescence intensity distribution, Figure 5(b) is a graph of comparative luminescence intensity distribution at 300 °C, Figure 6(a) is a graph of comparative luminescence intensity distribution at 400 °C, Figure 6(b) is a graph of comparative luminescence intensity at 480 °C It is a graph of distribution.

Further, FIG. 7 shows a graph showing the relationship between the emission intensity ratio and temperature, which is a map of the temperature situation with respect to the emission intensity ratio (P2/P1).

Note that the illustrated example shows the wavelength-dependent performance of the emission intensity of silicon carbide with a nitrogen content of 2×10 ¹⁸ /cm ³ at each temperature. The wavelength of the ultraviolet light was 325 nm, and the intensity of the energy density was 30 W/cm ² . The numerical values obtained are just examples, and the numerical values shown are not all of the results.

As shown in FIG. 4(a), in the comparative emission intensity distribution at room temperature, for example, emission is observed at a wavelength of 350 nm to 460 nm, and the emission intensity P1 at a wavelength of about 390 nm is about 0.6 × 10 ^{- 8} cps, and the emission intensity P2 at a wavelength of about 420 nm is about 0.01×10 ⁻⁸ cps.

As shown in FIG. 4(b), in the comparative emission intensity distribution at 100°C, emission is observed at wavelengths from 360 nm to 460 nm, and the emission intensity P1 at a wavelength of about 390 nm is about 0.9 × 10 ^-8 cps, and the emission intensity P2 at a wavelength of about 420 nm is about 0.16×10 ^-8 cps.

As shown in FIG. 5(a), in the comparative emission intensity distribution at 200°C, emission is observed at wavelengths from 360 nm to 460 nm, and the emission intensity P1 at a wavelength of about 390 nm is about 0.9 × 10 ^-8 cps, and the emission intensity P2 at a wavelength of about 420 nm is about 0.05×10 ⁻⁸ cps.

As shown in FIG. 5(b), in the comparative emission intensity distribution at 300°C, emission is observed at wavelengths from 360 nm to 460 nm, and the emission intensity P1 at a wavelength of about 390 nm is about 0.8 × 10 ^-8 cps, and the emission intensity P2 at a wavelength of about 420 nm is about 0.06×10 ⁻⁸ cps.

As shown in FIG. 6(a), in the comparative emission intensity distribution at 400°C, emission is observed at a wavelength of 360 nm to 460 nm, and the emission intensity P1 at a wavelength of about 390 nm is about 0.7 × 10 ^-8 cps, and the emission intensity P2 at a wavelength of about 420 nm is about 0.06×10 ⁻⁸ cps.

As shown in FIG. 6(b), in the comparative emission intensity distribution at 480°C, emission is observed at wavelengths from 360 nm to 460 nm, and the emission intensity P1 at a wavelength of about 390 nm is about 0.6 × 10 ^-8 cps, and the emission intensity P2 at a wavelength of about 420 nm is about 0.07×10 ⁻⁸ cps.

As shown in FIGS. 4 to 6, the emission intensity P1 at about 390 nm, which is the two wavelengths in the emission intensity distribution at each temperature (room temperature, 100°C, 200°C, 300°C, 400°C, 480°C), is about 420 nm. The luminescence intensity P2 at is determined. The ratio (P2/P1) of the determined luminescence intensities P1 and P2 is taken as the luminescence intensity ratio at each temperature (room temperature, 100°C, 200°C, 300°C, 400°C, 480°C).

As shown in Figure 7, the emission intensity ratio (P2/P1) at each temperature (room temperature, 100°C, 200°C, 300°C, 400°C, 480°C) is plotted, and the emission intensity ratio (P2/P1) is plotted against temperature. A map of the situation is constructed.

The ratio of the emission intensity P1 at 380 nm (wavelength near 400 nm) and the emission intensity P2 at 420 nm, which are two wavelengths in the input emission data (actual emission intensity distribution), is expressed as the actual emission intensity ratio (P2/P1). (actual intensity ratio deriving means 13).

The value of the actual luminous intensity ratio (P2/P1) is compared with the dataed ratio (read from the map shown in Figure 7), and it is estimated based on the map that the temperature at the corresponding ratio is the actual temperature. be done.

It is also possible to directly compare the shape of the input luminescence data (actual luminescence intensity distribution) and the comparative luminescence intensity distributions shown in FIGS. 4 to 6, determine the degree of approximation, and derive the temperature. It is possible.

Therefore, from the actual luminescence data (actual luminescence intensity distribution), the actual luminescence intensity ratio (P2/P1), which is the ratio of the luminescence intensity at two wavelengths (multiple wavelengths) of 380 nm and 420 nm, is calculated and stored in advance. From the comparative emission intensity distribution, the emission intensity ratio at two wavelengths (multiple wavelengths) of 380 nm and 420 nm at each of multiple temperatures (room temperature, 100°C, 200°C, 300°C, 400°C, 480°C) (P2/P1) is obtained.

Then, based on the map of the temperature situation for the luminescence intensity ratio (P2/P1) constructed based on the luminescence intensity ratio, the temperature corresponding to the actual luminescence intensity ratio is read out and the temperature is determined (emission intensity ratio and the actual luminescence intensity ratio are compared to derive a temperature corresponding to the actual luminescence intensity ratio).

In the above embodiment, an example was given in which temperature is estimated using the emission intensity ratio (P2/P1) at two wavelengths (multiple wavelengths), 380 nm and 420 nm. It is also possible to estimate the temperature using the half-width, which is the width of the emission intensity distribution when .

Estimation of temperature using half width will be explained. FIG. 8 shows a graph showing the relationship between half width and temperature.

As shown in Figures 4 to 6, when the emission intensity is half of the maximum, for the emission intensity distribution (comparative emission intensity distribution) at each temperature of room temperature, 100°C, 200°C, 300°C, 400°C, and 480°C. A half-width H (comparison half-width) that is the width of the emission intensity distribution is stored.

Then, as shown in FIG. 8, the half-width H at each temperature of room temperature, 100°C, 200°C, 300°C, 400°C, and 480°C is plotted, and a map of temperature against the half-width H is constructed and stored. (emission intensity distribution storage means).

The half-value width H in the actual emission intensity distribution, which is the distribution of the input emission intensity, is calculated (actual half-value width deriving means), and the obtained value is compared with the mapped value (read from the map shown in Figure 8). The temperature at the corresponding half width is estimated to be the actual temperature based on the map (temperature derivation means).

It is also possible to estimate the temperature using the peak area of the emission intensity distribution.

Estimation of temperature using the peak area of the emission intensity distribution will be explained. FIG. 9(a) shows a graph of the emission intensity distribution, and FIG. 9(b) shows a graph of the peak area.

Calculations are performed to reproduce the superposition of two peaks using a density distribution function (Voigt function) for the emission intensity distribution shown by the solid line in FIG. 9(a). As a result of the calculation, as shown by the dotted line in FIG. 9(a), the original emission intensity distribution (solid line) is almost reproduced by superimposing the two density distribution functions.

As shown in FIG. 9(b), the emission intensity of each peak is proportional to its area. For example, the area of peak 1 is within the thick hatched range, and the area of peak 2 is within the thin hatched range.

The areas of peak 1 and peak 2 of the emission intensity distribution at each temperature of room temperature, 100° C., 200° C., 300° C., 400° C., and 480° C. are determined, and the peak area ratio (peak 2/peak 1) is stored.

Then, the peak area ratio (Peak 2/Peak 1) at each temperature of room temperature, 100°C, 200°C, 300°C, 400°C, and 480°C is plotted, and a map of temperature against the peak area ratio (Peak 2/Peak 1) is plotted. (not shown) is constructed and stored.

The peak area ratio (peak 2/peak 1) in the actual emission intensity distribution, which is the input emission intensity distribution, is determined, and the obtained peak area ratio is compared with the mapped peak area ratio value, and the corresponding peak area ratio is calculated. The temperature at the peak area ratio is estimated to be the actual temperature based on the map.

As described above (see FIG. 1), silicon carbide 2 (adhering member in the shape of compression molded silicon carbide 2 powder) is attached to the wall 1 of the structure, and the ultraviolet light irradiated from the ultraviolet light irradiation means 3 By causing silicon carbide 2 to emit light, the temperature of silicon carbide 2 is estimated based on the light emission data of silicon carbide 2, and the temperature of wall 1 (structure) is measured based on the estimated temperature.

As a result, it is possible to measure the temperature of the wall 1 of a complex structure or a structure that is difficult for workers to access, and the temperature of the object to be measured can be measured without being subject to restrictions from the object to be measured or the environment in which it is used. becomes possible.

Furthermore, by mixing silicon carbide 9 with fluid 8 and causing silicon carbide 9 to emit light with ultraviolet light irradiated from ultraviolet light irradiation means 3 (see FIG. 2), silicon carbide 9 can be The temperature of the fluid 8 is measured based on the estimated temperature.

As a result, the temperature of the fluid 8 inside the pipe 7 can be directly measured without installing a temperature detection device in the pipe 7, and the temperature of the fluid 8 inside the pipe 7 can be directly measured. It becomes possible to measure the temperature of objects.

In the above-mentioned embodiment, the device for detecting the temperature of the wall 1 of the structure and the temperature of the fluid 8 inside the pipe 7 was explained as an example. It can be applied to detecting the temperature of various objects.

As a structure, it can be applied to detecting the temperature of equipment of power generation equipment (nuclear power, thermal power, etc.) and piping of various fluids. Further, as the fluid inside the piping, it can be applied to detecting the temperature of fluids such as water supply piping, cooling water piping, and working fluid of power generation equipment (nuclear power, thermal power, etc.).

For example, as structures, nuclear power generation equipment (PWR: pressurized water type, BWR: boiling water type), steam piping for operation of thermal power generation equipment (extensive piping), and welded parts of piping can be applied. Further, as a structure, water piping (steam piping) inside a case of a boiler (combustion boiler, exhaust heat recovery boiler), etc. can be applied. Moreover, a gas turbine blade (heat shield coating) can be applied as a structure.

For steam piping and welded parts of nuclear power generation equipment and thermal power generation equipment, by measuring the temperature distribution of the piping (welded parts) over a wide range of high temperatures, it is possible to predict in advance the risk of damage such as stress corrosion cracking. Leads to facility protection. In particular, since the inside of the case of a combustion boiler or an exhaust heat recovery boiler is a complex structure that is difficult for workers to access, it is suitable to apply the temperature detection device of the present invention.

In addition, in boiling water nuclear power generation facilities (PWR), by measuring the temperature distribution of the primary cooling pipe (cast steel), it is possible to predict the deterioration of the primary cooling pipe, which will lead to the elucidation of the deterioration mechanism. Furthermore, by measuring the temperature of the gas turbine blade (thermal shield coating), it is possible to predict the risk of oxidative deterioration of the heat shield coating caused by temperature.

Further, as the detection target, for example, it is possible to apply a target of a part that is subject to restrictions regarding measurement, such as blood, skin, and organs of a living organism (living body).

The material is not limited to silicon carbide (SiC), and other materials can be used as long as they emit light with ultraviolet light in the ultraviolet wavelength range.

INDUSTRIAL APPLICATION This invention can be utilized in the industrial field of a temperature measuring device and a temperature measuring method.

1 Wall 2, 9 Silicon carbide (SiC: SiC with crystal structure)
3 Ultraviolet light irradiation means 4 Temperature detection control means 7 Piping 8 Fluid 11 Temperature derivation means 12 Emission intensity distribution storage means 13 Actual intensity ratio derivation means

Claims (6)

Silicon carbide (SiC) brought into contact with the detection target;
ultraviolet light irradiation means for irradiating the silicon carbide (SiC) with ultraviolet light in the ultraviolet wavelength range;
The light emission data of the silicon carbide (SiC) emitted by the ultraviolet light irradiated by the ultraviolet light irradiation means is input, and the temperature of the silicon carbide (SiC) is estimated based on the light emission data, thereby detecting the detection target. A temperature measuring device comprising: temperature detection control means for measuring temperature. The temperature measuring device according to claim 1 ,
The temperature detection control means includes:
A temperature measuring device comprising: a temperature deriving means for deriving a temperature based on a luminescence intensity distribution as the luminescence data. The temperature measuring device according to claim 2 ,
The temperature detection control means includes:
The temperature derivation means includes a light emission intensity distribution storage means in which a light emission intensity distribution corresponding to a plurality of temperature parameters is stored as a comparative light emission intensity distribution;
A temperature measurement device characterized in that a temperature is derived based on a light emission intensity distribution of input light emission data and the comparative light emission intensity distribution stored in the light emission intensity distribution storage means. The temperature measuring device according to claim 3 ,
The temperature detection control means includes:
Emission data of the silicon carbide (SiC) is inputted, and an actual intensity ratio deriving means is provided for obtaining an actual emission intensity ratio that is a ratio of emission intensities at a plurality of wavelengths in the input emission data,
In the emission intensity distribution storage means,
For each of the plurality of temperatures, the ratio of the luminescence intensity of the plurality of wavelengths of the comparative luminescence intensity distribution is stored as the luminescence intensity ratio,
In the temperature deriving means,
The light emission intensity ratio stored in the light emission intensity distribution storage means and the actual light emission intensity ratio derived by the actual light intensity ratio deriving means are compared, and a temperature according to the actual light emission intensity ratio is derived. Temperature measuring device. The temperature measuring device according to claim 3 ,
The temperature detection control means includes:
having an actual half-value width deriving means for receiving the emission data of the silicon carbide (SiC) and determining the actual half-value width of the emission intensity distribution at a plurality of wavelengths in the input emission data;
In the emission intensity distribution storage means,
For each of a plurality of temperatures, the half-width at a plurality of wavelengths of the comparative emission intensity distribution is stored as a comparative half-width,
In the temperature deriving means,
A temperature measurement device characterized in that a comparative half-width stored in an emission intensity distribution storage means and a half-width derived by an actual half-width deriving means are compared, and a temperature corresponding to the half-width is derived. By irradiating silicon carbide (SiC) in contact with a detection target with electromagnetic waves in the ultraviolet wavelength range, and estimating the temperature of the silicon carbide (SiC) based on the status of the emission intensity of the detection target emitted by the electromagnetic waves. , measuring the temperature of the detection target.

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