JP7363053B2 - 発光装置、発光デバイス、光学装置及び情報処理装置 - Google Patents

発光装置、発光デバイス、光学装置及び情報処理装置 Download PDF

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Publication number
JP7363053B2
JP7363053B2 JP2019034456A JP2019034456A JP7363053B2 JP 7363053 B2 JP7363053 B2 JP 7363053B2 JP 2019034456 A JP2019034456 A JP 2019034456A JP 2019034456 A JP2019034456 A JP 2019034456A JP 7363053 B2 JP7363053 B2 JP 7363053B2
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Prior art keywords
light
light source
emitting device
light emitting
section
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Japanese (ja)
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JP2020141018A5 (OSRAM
JP2020141018A (ja
Inventor
智志 稲田
健一 大野
健史 皆見
道昭 村田
貴史 樋口
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Fujifilm Business Innovation Corp
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Fuji Xerox Co Ltd
Fujifilm Business Innovation Corp
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Priority to JP2019034456A priority Critical patent/JP7363053B2/ja
Priority to US16/511,095 priority patent/US11657130B2/en
Priority to CN201910826058.4A priority patent/CN111628404B/zh
Publication of JP2020141018A publication Critical patent/JP2020141018A/ja
Publication of JP2020141018A5 publication Critical patent/JP2020141018A5/ja
Priority to US18/134,272 priority patent/US12481737B2/en
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/30—Authentication, i.e. establishing the identity or authorisation of security principals
    • G06F21/31—User authentication
    • G06F21/32—User authentication using biometric data, e.g. fingerprints, iris scans or voiceprints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/04—Systems determining the presence of a target
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • G01S7/4815—Constructional features, e.g. arrangements of optical elements of transmitters alone using multiple transmitters
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/30—Authentication, i.e. establishing the identity or authorisation of security principals
    • G06F21/45—Structures or tools for the administration of authentication
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/16—Human faces, e.g. facial parts, sketches or expressions
    • G06V40/161—Detection; Localisation; Normalisation
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/16—Human faces, e.g. facial parts, sketches or expressions
    • G06V40/161—Detection; Localisation; Normalisation
    • G06V40/166—Detection; Localisation; Normalisation using acquisition arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/10—Image acquisition
    • G06V10/12—Details of acquisition arrangements; Constructional details thereof
    • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/145—Illumination specially adapted for pattern recognition, e.g. using gratings
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V20/00—Scenes; Scene-specific elements
    • G06V20/60—Type of objects
    • G06V20/64—Three-dimensional [3D] objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Security & Cryptography (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Oral & Maxillofacial Surgery (AREA)
  • Human Computer Interaction (AREA)
  • Health & Medical Sciences (AREA)
  • Multimedia (AREA)
  • General Health & Medical Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP2019034456A 2019-02-27 2019-02-27 発光装置、発光デバイス、光学装置及び情報処理装置 Active JP7363053B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019034456A JP7363053B2 (ja) 2019-02-27 2019-02-27 発光装置、発光デバイス、光学装置及び情報処理装置
US16/511,095 US11657130B2 (en) 2019-02-27 2019-07-15 Light emitter, light emitting device, optical device, and information processing apparatus
CN201910826058.4A CN111628404B (zh) 2019-02-27 2019-09-03 发光器、发光器件、光学装置和信息处理设备
US18/134,272 US12481737B2 (en) 2019-02-27 2023-04-13 Light emitter, light emitting device, optical device, and information processing apparatus

Applications Claiming Priority (1)

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JP2019034456A JP7363053B2 (ja) 2019-02-27 2019-02-27 発光装置、発光デバイス、光学装置及び情報処理装置

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JP2020141018A5 JP2020141018A5 (OSRAM) 2022-03-03
JP7363053B2 true JP7363053B2 (ja) 2023-10-18

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7363053B2 (ja) * 2019-02-27 2023-10-18 富士フイルムビジネスイノベーション株式会社 発光装置、発光デバイス、光学装置及び情報処理装置
JPWO2021210440A1 (OSRAM) * 2020-04-17 2021-10-21

Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2008121075A1 (en) 2007-03-30 2008-10-09 Agency For Science, Technology And Research Optical interconnect structure and method
US20150069113A1 (en) 2013-09-11 2015-03-12 Princeton Optronics Inc. VCSEL Packaging
US20150229912A1 (en) 2014-02-10 2015-08-13 Microsoft Corporation Vcsel array for a depth camera

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JPH09181339A (ja) * 1995-12-21 1997-07-11 Matsushita Electron Corp 光電変換装置
US5748653A (en) * 1996-03-18 1998-05-05 The United States Of America As Represented By The Secretary Of The Air Force Vertical cavity surface emitting lasers with optical gain control (V-logic)
JP3734017B2 (ja) * 1998-08-05 2006-01-11 セイコーエプソン株式会社 光モジュール
US6346777B1 (en) * 2000-11-03 2002-02-12 Ledart Co., Ltd. Led lamp apparatus
WO2015136099A2 (en) * 2014-03-14 2015-09-17 Mesa Imaging Ag Optical imaging modules and optical detection modules including a time-of-flight sensor
US9293422B1 (en) * 2014-09-26 2016-03-22 Texas Instruments Incorporated Optoelectronic packages having magnetic field cancelation
US10463255B1 (en) * 2016-04-22 2019-11-05 Invisio Medical, Inc. Optical source for diffuse optical tomography
JP6829562B2 (ja) 2016-08-22 2021-02-10 スタンレー電気株式会社 垂直共振器型発光素子レーザモジュール
JP7363053B2 (ja) * 2019-02-27 2023-10-18 富士フイルムビジネスイノベーション株式会社 発光装置、発光デバイス、光学装置及び情報処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008121075A1 (en) 2007-03-30 2008-10-09 Agency For Science, Technology And Research Optical interconnect structure and method
US20150069113A1 (en) 2013-09-11 2015-03-12 Princeton Optronics Inc. VCSEL Packaging
US20150229912A1 (en) 2014-02-10 2015-08-13 Microsoft Corporation Vcsel array for a depth camera

Also Published As

Publication number Publication date
US12481737B2 (en) 2025-11-25
CN111628404A (zh) 2020-09-04
US20200271760A1 (en) 2020-08-27
CN111628404B (zh) 2024-07-19
JP2020141018A (ja) 2020-09-03
US20230252122A1 (en) 2023-08-10
US11657130B2 (en) 2023-05-23

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