JP7346584B2 - electromagnetic wave generator - Google Patents

electromagnetic wave generator Download PDF

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JP7346584B2
JP7346584B2 JP2021551700A JP2021551700A JP7346584B2 JP 7346584 B2 JP7346584 B2 JP 7346584B2 JP 2021551700 A JP2021551700 A JP 2021551700A JP 2021551700 A JP2021551700 A JP 2021551700A JP 7346584 B2 JP7346584 B2 JP 7346584B2
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博之 田中
秀樹 小林
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Pioneer Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

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Description

本発明は、電磁波発生装置に関し、特に、複数個の電磁波発生素子を並列して駆動する電磁波発生装置に関する。 The present invention relates to an electromagnetic wave generating device, and particularly to an electromagnetic wave generating device that drives a plurality of electromagnetic wave generating elements in parallel.

例えば、０．１ＴＨｚ～１０ＴＨｚの周波数帯域にわたって分布するテラヘルツ帯の電磁波を用いた計測装置の電磁波発生素子として、共鳴トンネルダイオード（Resonant Tunneling Diode：以下、ＲＴＤと称する）が知られている。ＲＴＤは、電圧電流特性に微分負性抵抗（Negative Differential Registivity：以下、ＮＤＲと称する）領域を有する素子であり、微分負性抵抗領域のバイアス電圧の印加によってテラヘルツ帯の電磁波を発生する。 For example, a resonant tunneling diode (hereinafter referred to as RTD) is known as an electromagnetic wave generating element for a measuring device that uses terahertz band electromagnetic waves distributed over a frequency band of 0.1 THz to 10 THz. An RTD is an element having a negative differential resistance (NDR) region in its voltage-current characteristics, and generates terahertz band electromagnetic waves by applying a bias voltage in the differential negative resistance region.

例えば、特許文献１には、テラヘルツ波発振素子としてのＲＴＤ発振素子に直流のオフセット電圧とパルス状電圧とを重畳して印加して電磁波の発生状態と非発生状態を繰り返し生じさせることで、テラヘルツ帯の電磁波で振幅偏移変調方式（Amplitude Shift Keying：以下、ＡＳＫと称する）を実現することが開示されている。 For example, Patent Document 1 discloses that by applying a direct current offset voltage and a pulsed voltage in a superimposed manner to an RTD oscillation element as a terahertz wave oscillation element to repeatedly cause an electromagnetic wave generation state and non-generation state, terahertz It has been disclosed that Amplitude Shift Keying (hereinafter referred to as ASK) is realized using electromagnetic waves in the band.

特許６０９９１１４号公報Patent No. 6099114

ＲＴＤ発振素子に上述のオフセットされたパルス状のバイアス電圧を印加する手法としては、デジタルアナログ変換回路（以下、ＤＡＣと称する）による出力電圧の制御が挙げられる。 An example of a method for applying the above-mentioned offset pulse-like bias voltage to the RTD oscillation element is to control the output voltage using a digital-to-analog conversion circuit (hereinafter referred to as DAC).

また、複数のＲＴＤ発振素子を発生源として電磁波計測装置に用いる場合、ＲＴＤ発振素子のそれぞれから発生されたテラヘルツ波同士に干渉が発生する。電磁波計測装置の検出部のテラヘルツ波検出素子の位置に干渉縞の暗部が発生してしまった場合、テラヘルツ波検出素子の検出値が小さくなるという問題が生じる。 Furthermore, when a plurality of RTD oscillation elements are used as a generation source in an electromagnetic wave measuring device, interference occurs between the terahertz waves generated from each of the RTD oscillation elements. If a dark area of interference fringes occurs at the position of the terahertz wave detection element of the detection section of the electromagnetic wave measuring device, a problem arises in that the detected value of the terahertz wave detection element becomes small.

テラヘルツ波の干渉が問題となる場合には、干渉縞を生じさせないように、互いに干渉を生じさせるＲＴＤ発振素子のそれぞれのテラヘルツ波の発生に時間差を設ける手法が有効となる。 When interference of terahertz waves becomes a problem, an effective method is to set a time difference between the generation of terahertz waves of RTD oscillation elements that cause interference with each other so as not to cause interference fringes.

上記のような、複数のＲＴＤ発振素子を用いて所望のＲＴＤ発振素子を選択的に駆動させるようなシステムでは、素子の数量に応じたバイアス電圧を生成するために、多チャンネルのＤＡＣを用いることが望ましい。 In a system such as the one described above in which a desired RTD oscillation element is selectively driven using a plurality of RTD oscillation elements, a multi-channel DAC is used to generate a bias voltage according to the number of elements. is desirable.

しかし、ＡＳＫのように高い変調周波数で出力電圧を交互に変化させるような場合には高速ＤＡＣが必要となり、高速ＤＡＣを複数のＲＴＤ発振素子の数量に応じてＩＣチップ上に多素子化すると、ＩＣチップ上の回路が大規模化し、高コスト化を招く。加えて、高速ＤＡＣを制御する制御信号も多数必要となる。 However, when the output voltage is alternately changed at a high modulation frequency like ASK, a high-speed DAC is required, and if the high-speed DAC is multi-elemented on an IC chip according to the number of multiple RTD oscillation elements, The circuits on IC chips become larger in scale, leading to higher costs. In addition, a large number of control signals are required to control the high speed DAC.

本発明は、上記の点に鑑みてなされたものであり、ＤＡＣを用いながらの回路の大規模化、高コスト化を招くことなく、高い変調周波数で駆動する複数のＲＴＤ発振素子の並列制御が可能な電磁波発生装置を提供することを目的の１つとしている。 The present invention has been made in view of the above points, and enables parallel control of multiple RTD oscillation elements driven at a high modulation frequency without increasing the scale or cost of the circuit while using a DAC. One of the purposes is to provide a possible electromagnetic wave generation device.

請求項１に記載の発明は、駆動電圧が供給され、これに応答して各々が電磁波を発生する複数の電磁波発生素子と、前記複数の電磁波発生素子の各々に対応する複数の直流電圧を電圧可変に生成する直流電圧源と、前記複数の電磁波発生素子に所定の２値の電圧値の間で電圧値が周期的に変化する変調電圧を生成する変調電圧源と、前記複数の直流電圧の各々と前記変調電圧とを加算して前記複数の電磁波発生素子に夫々供給する供給部と、前記直流電圧源を制御して前記複数の直流電圧の各々の電圧値を互いに独立して変化させる制御部と、を備えることを特徴とする。 The invention according to claim 1 provides a plurality of electromagnetic wave generating elements each of which generates an electromagnetic wave in response to the supply of a driving voltage, and a plurality of DC voltages corresponding to each of the plurality of electromagnetic wave generating elements. a modulated voltage source that generates a variably DC voltage; a modulated voltage source that generates a modulated voltage whose voltage value changes periodically between predetermined binary voltage values in the plurality of electromagnetic wave generating elements; a supply unit that adds the modulated voltages and the modulated voltages and supplies the sum to the plurality of electromagnetic wave generating elements, respectively; and control that controls the DC voltage source to vary the voltage value of each of the plurality of DC voltages independently of each other. It is characterized by comprising: and.

本発明による電磁波発生装置１の構成を示す機能ブロック図である。1 is a functional block diagram showing the configuration of an electromagnetic wave generator 1 according to the present invention. ＲＴＤ発振素子の電圧電流特性の１例を示すグラフである。It is a graph showing an example of voltage-current characteristics of an RTD oscillation element. 動作対象のＲＴＤ発振素子に印加される駆動電圧ＶDrの変化とそれに応じてＲＴＤ発振素子から発生するテラヘルツ波の変化を示すタイムチャートである。3 is a time chart showing changes in the drive voltage V Dr applied to the RTD oscillation element to be operated and changes in the terahertz wave generated from the RTD oscillation element accordingly. 動作対象外のＲＴＤ発振素子に印加される駆動電圧ＶDrの変化とそれに応じてＲＴＤ発振素子から発生するテラヘルツ波の変化を示すタイムチャートである。3 is a time chart showing changes in the drive voltage V Dr applied to an RTD oscillation element that is not subject to operation, and a corresponding change in a terahertz wave generated from the RTD oscillation element.

以下に本発明の実施例について詳細に説明する。 Examples of the present invention will be described in detail below.

図１は、本発明による電磁波発生装置１の構成を示す機能ブロック図である。 FIG. 1 is a functional block diagram showing the configuration of an electromagnetic wave generator 1 according to the present invention.

電磁波発生装置１は、テラヘルツ波の発生を指令するための制御信号を供給する制御部１０を含んでいる。また、電磁波発生装置１は、複数の出力端からそれぞれ直流電圧を出力する直流電圧源である多チャンネルＤＡＣ２０と、ＡＳＫの変調周波数を有し、２値の電圧値を周期的に変化させて出力する高速ＤＡＣ３０と、多チャンネルＤＡＣ２０の出力と高速ＤＡＣ３０の出力を加算するｍ個の加算器４０と及びテラヘルツ波発生源であるｍ個のＲＴＤ発振素子５０とを有する。 The electromagnetic wave generator 1 includes a control section 10 that supplies a control signal for instructing generation of terahertz waves. Further, the electromagnetic wave generator 1 has a multi-channel DAC 20 which is a DC voltage source that outputs DC voltage from a plurality of output terminals, and has an ASK modulation frequency, and outputs a binary voltage value by periodically changing it. It has a high-speed DAC 30, m adders 40 that add the output of the multi-channel DAC 20 and the output of the high-speed DAC 30, and m RTD oscillation elements 50 that are terahertz wave generation sources.

制御部１０は、多チャンネルＤＡＣ２０に接続され、多チャンネルＤＡＣ２０の出力端から出力される直流のオフセット電圧ＶOffset１～ＶOffsetｍのそれぞれの電圧値を制御するオフセット電圧制御信号を供給する。また、制御部１０は、高速ＤＡＣ３０に接続され、高速ＤＡＣ３０が出力する変調電圧ＶACの電圧振幅及び周波数を制御する変調電圧制御信号を供給する。The control unit 10 is connected to the multi-channel DAC 20 and supplies an offset voltage control signal that controls the voltage value of each of the DC offset voltages V Offset 1 to V Offset m output from the output end of the multi-channel DAC 20. Further, the control unit 10 is connected to the high-speed DAC 30 and supplies a modulation voltage control signal that controls the voltage amplitude and frequency of the modulation voltage V AC output by the high-speed DAC 30.

多チャンネルＤＡＣ２０は、ｍ個の出力端を有する直流電圧源である。当該ｍ個の出力端のそれぞれがｍ個の加算器４０のそれぞれに接続されている。多チャンネルＤＡＣ２０は、制御部１０から供給されるオフセット電圧制御信号に基づいて、それぞれの出力端から出力する直流のオフセット電圧ＶOffset１～ＶOffsetｍのそれぞれの電圧値を可変に制御して、それぞれの出力端から出力するように動作する。The multi-channel DAC 20 is a DC voltage source having m output terminals. Each of the m output terminals is connected to each of the m adders 40. The multi-channel DAC 20 variably controls the voltage value of each of the DC offset voltages V Offset 1 to V Offset m output from each output terminal based on the offset voltage control signal supplied from the control unit 10. It operates to output from each output terminal.

高速ＤＡＣ３０は、例えば、矩形波のように電圧値が周期的に変化する変調電圧ＶACを出力する１つの出力端を有する電圧源である。当該出力端は、ｍ個の加算器４０のそれぞれに接続されている。高速ＤＡＣ３０は、制御部１０から供給される変調電圧制御信号に基づいて、変調電圧ＶACを、最大電圧値並びに最小電圧値及び周波数を可変に出力するように動作する。具体的には、例えば、高速ＤＡＣ３０は、変調電圧制御信号に基づいて、出力する変調電圧ＶACの最大電圧値、最少電圧値及びパルスの発生周期を変化させる。The high-speed DAC 30 is, for example, a voltage source that has one output terminal that outputs a modulated voltage V AC whose voltage value changes periodically like a rectangular wave. The output end is connected to each of the m adders 40. The high-speed DAC 30 operates to variably output the maximum voltage value, minimum voltage value, and frequency of the modulated voltage V AC based on the modulated voltage control signal supplied from the control unit 10 . Specifically, for example, the high-speed DAC 30 changes the maximum voltage value, minimum voltage value, and pulse generation period of the modulated voltage V AC to be output based on the modulated voltage control signal.

ｍ個の加算器４０は、多チャンネルＤＡＣ２０のｍ個のそれぞれの出力端及び高速ＤＡＣ３０の出力端に接続されている。ｍ個の加算器４０は、多チャンネルＤＡＣ２０のｍ個のそれぞれの出力端から出力される直流のオフセット電圧ＶOffset１～ＶOffsetｍのそれぞれの電圧値と高速ＤＡＣ３０から出力される変調電圧ＶACとをそれぞれの加算器で加算してこれを出力する。すなわち、ｍ個の加算器４０は、変調電圧ＶACがオフセット電圧ＶOffset１～ＶOffsetｍのそれぞれによってオフセットされた駆動電圧ＶDr１～ＶDrｍを生成し、加算器４０のそれぞれの加算器から出力するように動作する。The m adders 40 are connected to the m respective outputs of the multi-channel DAC 20 and the output of the high-speed DAC 30. The m adders 40 combine the respective voltage values of the DC offset voltages V Offset 1 to V Offset m output from the m output terminals of the multi-channel DAC 20 and the modulation voltage V AC output from the high-speed DAC 30. and are added by each adder and output. That is, the m adders 40 generate driving voltages V Dr 1 to V Dr m in which the modulation voltage V AC is offset by each of the offset voltages V Offset 1 to V Offset m, and It operates to output from the device.

ｍ個のＲＴＤ発振素子５０は、ｍ個の加算器４０の出力端のそれぞれに接続されており、ｍ個の加算器４０が生成した駆動電圧ＶDr１～ＶDrｍがｍ個のＲＴＤ発振素子５０のそれぞれに供給される。ｍ個のＲＴＤ発振素子５０は、供給される駆動電圧ＶDr１～ＶDrｍに基づいてそれぞれのＲＴＤ発振素子からテラヘルツ波を発生する。The m RTD oscillation elements 50 are connected to each of the output terminals of the m adders 40, and the drive voltages V Dr 1 to V Dr m generated by the m adders 40 are connected to the m RTD oscillation elements. is supplied to each of the elements 50. The m RTD oscillation elements 50 generate terahertz waves from each RTD oscillation element based on the supplied drive voltages V Dr 1 to V Dr m.

図２は、ＲＴＤ発振素子の電圧電流特性を示す概略図である。 FIG. 2 is a schematic diagram showing the voltage-current characteristics of the RTD oscillation element.

ＲＴＤ発振素子は、図２に示すように、正バイアスの電圧を印加していくと、印加電圧の上昇に伴って線形的に電流が変化することが知られている（点ａ－ｂ間）。しかし、所定の電圧領域では、強い非線形領域が現れることが知られている（点ｂ－ｃ間）。さらに印加電圧を高くすると、印加電圧に伴って電流が減少するＮＤＲ領域が現れることが知られている（点ｃ－ｄ間）。 As shown in Figure 2, it is known that when a positive bias voltage is applied to an RTD oscillation element, the current changes linearly as the applied voltage increases (between points a and b). . However, it is known that a strong nonlinear region appears in a predetermined voltage region (between points b and c). It is known that when the applied voltage is further increased, an NDR region appears (between points c and d) where the current decreases with the applied voltage.

ＲＴＤ発振素子のＮＤＲ領域に相当するバイアス電圧を印加することで、ＲＴＤ発振素子からテラヘルツ帯の電磁波が発生することが知られている。 It is known that terahertz band electromagnetic waves are generated from the RTD oscillation element by applying a bias voltage corresponding to the NDR region of the RTD oscillation element.

すなわち、バイアス電圧値ＶNDR１～ＶNDR２のテラヘルツ波発振領域の範囲のバイアス電圧を印加することで、ＲＴＤ発振素子からテラヘルツ波を発生させることが可能である。換言すれば、このＲＴＤ発振素子の最大動作電圧はＶNDR２であり、最小動作電圧はＶNDR１である。That is, by applying a bias voltage in the range of the terahertz wave oscillation region of bias voltage values V NDR 1 to V NDR 2, it is possible to generate a terahertz wave from the RTD oscillation element. In other words, the maximum operating voltage of this RTD oscillation element is V NDR 2, and the minimum operating voltage is V NDR 1.

また、バイアス電圧ＶNDR１～ＶNDR２のテラヘルツ波発振領域の範囲のバイアス電圧にＡＳＫの変調周波数を有する電圧を印加することで、テラヘルツ波を変調周波数に応じて断続的に発生させることが可能となる。Furthermore, by applying a voltage having a modulation frequency of ASK to the bias voltage in the range of the terahertz wave oscillation region of bias voltage V NDR 1 to V NDR 2, it is possible to generate terahertz waves intermittently according to the modulation frequency. It becomes possible.

制御部１０は、ｍ個のＲＴＤ発振素子５０に供給される駆動電圧ＶDr１～ＶDrｍのうち、多チャンネルＤＡＣ２０が出力する直流のオフセット電圧ＶOffset１～ＶOffsetｍのそれぞれの電圧値を制御することで、ｍ個のＲＴＤ発振素子５０のうち所望のＲＴＤ発振素子のみにテラヘルツ波を発生させるように制御する。The control unit 10 controls the voltage value of each of the DC offset voltages V Offset 1 to V Offset m output by the multi-channel DAC 20 among the drive voltages V Dr 1 to V Dr m supplied to the m RTD oscillation elements 50. By controlling, only a desired RTD oscillation element among the m RTD oscillation elements 50 is controlled to generate a terahertz wave.

このとき、高速ＤＡＣ３０からは、テラヘルツ波を発生させるＲＴＤ発振素子及び発生させないＲＴＤ発振素子のどちらにも同じ周波数と電圧の変調電圧ＶACが印加されている。すなわち、制御部１０は、多チャンネルＤＡＣ２０のｍ個の出力端のうち、テラヘルツ波を発生させるＲＴＤ発振素子に対応する出力端からはＲＴＤ発振素子を発振させる高電位な駆動電圧ＶDrとなるように変調電圧ＶACをオフセットさせるオフセット電圧ＶOffsetを出力させる。具体的には、例えば、上述したバイアス電圧値ＶNDR１～ＶNDR２となるような駆動電圧ＶDrが、加算器４０から出力されるようにオフセット電圧ＶOffsetを出力させる。その一方、テラヘルツ波を発生させないＲＴＤ発振素子に対応する出力端からはＲＴＤ発振素子が発振する電位に満たない駆動電圧ＶDrが出力されるように低いオフセット電圧ＶOffsetを供給するか又はオフセット電圧ＶOffsetの供給を停止させる。具体的には、例えば、上述したバイアス電圧値ＶNDR１～ＶNDR２未満となるような駆動電圧ＶDrが、加算器４０から出力されるようにオフセット電圧ＶOffsetを出力させる。At this time, the high-speed DAC 30 applies a modulation voltage V AC of the same frequency and voltage to both the RTD oscillation element that generates terahertz waves and the RTD oscillation element that does not generate terahertz waves. That is, the control unit 10 controls the output terminal of the m output terminals of the multi-channel DAC 20 so that the output terminal corresponding to the RTD oscillation element that generates the terahertz wave receives a high-potential drive voltage V Dr that causes the RTD oscillation element to oscillate. outputs an offset voltage V Offset that offsets the modulation voltage V AC . Specifically, for example, the offset voltage V Offset is outputted so that the drive voltage V Dr having the bias voltage value V NDR 1 to V NDR 2 described above is outputted from the adder 40 . On the other hand, from the output end corresponding to the RTD oscillation element that does not generate terahertz waves, a low offset voltage V Offset is supplied or the offset voltage Stop supplying V Offset . Specifically, for example, the offset voltage V Offset is outputted so that the drive voltage V Dr that is less than the bias voltage value V NDR 1 to V NDR 2 described above is outputted from the adder 40 .

制御部１０は、このように選択的に高いオフセット電圧ＶOffsetを各加算器４０に供給することで所望のＲＴＤ発振素子のみにテラヘルツ波を発生させるように制御する。The control unit 10 selectively supplies the high offset voltage V Offset to each adder 40 in this way, thereby controlling only desired RTD oscillation elements to generate terahertz waves.

本発明の電磁波発生装置１は、上記構成により、１個の多チャンネルＤＡＣ２０と、１個の高速ＤＡＣ３０でｍ個のＲＴＤ発振素子５０を選択的に動作させるよう制御することが可能となり、ＤＡＣを含むＩＣチップの回路の大規模化、高コスト化を招くことなく、高い変調周波数に対応したＲＴＤ発振素子の多素子制御が可能となる。 With the above configuration, the electromagnetic wave generating device 1 of the present invention can control the m RTD oscillation elements 50 to selectively operate with one multi-channel DAC 20 and one high-speed DAC 30, and the DAC can be controlled to operate selectively. Multi-element control of RTD oscillation elements compatible with high modulation frequencies is possible without increasing the scale and cost of the circuit of the included IC chip.

図３は、テラヘルツ波を出射させるＲＴＤ発振素子に印加される駆動電圧ＶDr及びＲＴＤ発振素子のテラヘルツ波出力の概略タイムチャートである。また、図４は、テラヘルツ波を出射させないＲＴＤ発振素子に印加される駆動電圧ＶDr及びＲＴＤ発振素子のテラヘルツ波出力の概略タイムチャートである。FIG. 3 is a schematic time chart of the drive voltage V Dr applied to the RTD oscillation element that emits the terahertz wave and the terahertz wave output of the RTD oscillation element. Further, FIG. 4 is a schematic time chart of the drive voltage V Dr applied to the RTD oscillation element that does not emit terahertz waves and the terahertz wave output of the RTD oscillation element.

図３及び図４を用いて本実施例の電磁波発生装置１の動作を説明する。 The operation of the electromagnetic wave generator 1 of this embodiment will be explained using FIGS. 3 and 4.

図３の上図は、ｍ個のＲＴＤ発振素子５０のうち、動作対象となるテラヘルツ波を周期的に発生させるＲＴＤ発振素子に供給される駆動電圧ＶDrのタイムチャートを示す。The upper diagram of FIG. 3 shows a time chart of the drive voltage V Dr supplied to the RTD oscillation element that periodically generates the terahertz wave to be operated, among the m RTD oscillation elements 50.

ＲＴＤ発振素子に印加される駆動電圧ＶDrは、上述の通り多チャンネルＤＡＣ２０から出力されるＶOffsetと高速ＤＡＣ３０から出力される矩形波電圧ＶACが合算された電圧値を有する。The drive voltage V Dr applied to the RTD oscillation element has a voltage value that is the sum of the V Offset output from the multi-channel DAC 20 and the rectangular wave voltage V AC output from the high-speed DAC 30, as described above.

よって、駆動電圧ＶDrは、最小値がオフセット電圧ＶOffsetであり最大値がオフセット電圧ＶOffset＋変調電圧ＶACの最大電圧となる２値の電圧値を変調電圧ＶACの周波数に応じて周期的に繰り返す電圧プロファイルを有する。Therefore, the driving voltage V Dr has a binary voltage value whose minimum value is the offset voltage V Offset and whose maximum value is the maximum voltage of the offset voltage V Offset + modulation voltage V AC , with a period according to the frequency of the modulation voltage V AC . It has a voltage profile that repeats over time.

制御部１０は、多チャンネルＤＡＣ２０に対して、駆動電圧ＶDrの最大電圧値がテラヘルツ波発振領域内の電圧値となるバイアス電圧ＶNDR１～ＶNDR２となり、且つ駆動電圧ＶDrの最小電圧値がテラヘルツ波発振領域外の電圧値となるバイアス電圧ＶNDR１以下となるように、動作対象のＲＴＤ発振素子５０に対応する多チャンネルＤＡＣ２０の出力端から出力させる直流電圧ＶOffsetの電圧値を制御する。The control unit 10 controls the multi-channel DAC 20 to set bias voltages V NDR 1 to V NDR 2 such that the maximum voltage value of the driving voltage V Dr is a voltage value within the terahertz wave oscillation region, and the minimum voltage of the driving voltage V Dr The voltage value of the DC voltage V Offset to be output from the output terminal of the multi-channel DAC 20 corresponding to the RTD oscillation element 50 to be operated is set so that the bias voltage V NDR 1 or less is a voltage value outside the terahertz wave oscillation region. Control.

図３の下図は、上記駆動電圧ＶDrがＲＴＤ発振素子に印加された際のＲＴＤ発振素子から発生するテラヘルツ波の挙動を示すタイムチャートである。The lower diagram of FIG. 3 is a time chart showing the behavior of the terahertz wave generated from the RTD oscillation element when the drive voltage V Dr is applied to the RTD oscillation element.

図３の上図に示すとおり、駆動電圧ＶDrが最大値となるバイアス電圧ＶNDR１～ＶNDR２の範囲内の電圧値となった場合にのみ、ＲＴＤ発振素子はテラヘルツ波を発生するように動作する。As shown in the upper diagram of FIG. 3, the RTD oscillation element generates terahertz waves only when the drive voltage V Dr reaches a voltage value within the range of bias voltage V NDR 1 to V NDR 2, which is the maximum value. works.

これにより、動作対象のＲＴＤ発振素子のテラヘルツ波は、変調電圧ＶACの周期で断続的にテラヘルツ波を発生させることが可能となる。Thereby, the terahertz wave of the RTD oscillation element to be operated can be generated intermittently at the period of the modulation voltage V AC .

次に、ｍ個のＲＴＤ発振素子５０のうち、動作対象外となるテラヘルツ波を発生させないＲＴＤ発振素子における駆動電圧ＶDr及びその際にＲＴＤ発振素子から出力されるテラヘルツ波の概略タイムチャートを図４に示す。Next, of the m RTD oscillation elements 50, a schematic time chart of the drive voltage V Dr of the RTD oscillation element that does not generate terahertz waves that are not subject to operation and the terahertz wave output from the RTD oscillation element at that time is shown. 4.

図４の上図は、ｍ個のＲＴＤ発振素子５０のうち、動作対象外となるテラヘルツ波に発生させないＲＴＤ発振素子に供給される駆動電圧ＶDrのタイムチャートを示す。The upper diagram of FIG. 4 shows a time chart of the drive voltage V Dr supplied to the RTD oscillation elements that do not generate terahertz waves, which are not the target of operation, among the m RTD oscillation elements 50.

制御部１０は、駆動電圧ＶDrの最大値がテラヘルツ波発振領域の低圧側の電圧値となるバイアス電圧ＶNDR１以下となるように、多チャンネルＤＡＣ２０に対して動作対象のＲＴＤ発振素子に対応する出力端のオフセット電圧ＶOffsetの電圧値を０Ｖとする等の制御をする。The control unit 10 controls the multi-channel DAC 20 to correspond to the RTD oscillation element to be operated so that the maximum value of the drive voltage V Dr is a bias voltage V NDR 1 or less, which is a voltage value on the low voltage side of the terahertz wave oscillation region. Control is performed such as setting the voltage value of the offset voltage V Offset at the output terminal to 0V.

すなわち、図４の上図に示すように、駆動電圧ＶDrの最大値は、テラヘルツ波発振領域内の電圧値となるバイアス電圧ＶNDR１～ＶNDR２の範囲には到達しない。That is, as shown in the upper diagram of FIG. 4, the maximum value of the drive voltage V Dr does not reach the range of bias voltages V NDR 1 to V NDR 2, which is a voltage value within the terahertz wave oscillation region.

図４の下図は、上記駆動電圧ＶDrがＲＴＤ発振素子に印加された際のＲＴＤ発振素子から発生するテラヘルツ波の挙動を示すタイムチャートである。The lower diagram of FIG. 4 is a time chart showing the behavior of the terahertz wave generated from the RTD oscillation element when the drive voltage V Dr is applied to the RTD oscillation element.

図４の上図に示すとおり、駆動電圧ＶDrが最大値となるバイアス電圧ＶNDR１～ＶNDR２の範囲に到達しない故、ＲＴＤ発振素子はテラヘルツ波を発生しない。As shown in the upper diagram of FIG. 4, the RTD oscillation element does not generate a terahertz wave because the drive voltage V Dr does not reach the maximum value in the bias voltage range V NDR 1 to V NDR 2.

すなわち、本実施例の電磁波発生装置１によれば、ＲＴＤ発振素子のそれぞれに印加される駆動電圧ＶDrのうち、直流電圧成分を供給する多チャンネルＤＡＣ２０のみを制御することで、ｍ個のＲＴＤ発振素子から選択的にテラヘルツ波を発生させることが可能となる。That is, according to the electromagnetic wave generating device 1 of this embodiment, by controlling only the multi-channel DAC 20 that supplies the DC voltage component of the drive voltage V Dr applied to each of the RTD oscillation elements, m RTDs can be generated. It becomes possible to selectively generate terahertz waves from the oscillation element.

本実施例によれば、１個の多チャンネルＤＡＣ２０と、１個の高速ＤＡＣ３０でｍ個のＲＴＤ発振素子５０を選択的に動作させるよう制御することが可能となり、ＤＡＣを含むＩＣチップの回路の大規模化、高コスト化を招くことなく、高い変調周波数に対応したＲＴＤ発振素子の多素子制御が可能となる。 According to this embodiment, it is possible to control the m RTD oscillation elements 50 to selectively operate with one multi-channel DAC 20 and one high-speed DAC 30, and the circuit of the IC chip including the DAC can be controlled to operate selectively. Multi-element control of RTD oscillation elements compatible with high modulation frequencies is possible without increasing the scale and cost.

また、本実施例によれば、多チャンネルＤＡＣ２０の出力端から出力される直流のオフセット電圧ＶOffset１～ＶOffsetｍのそれぞれの電圧値のみを制御することで、ｍ個のＲＴＤ発振素子５０のうち所望のＲＴＤ発振素子のみにテラヘルツ波を発生させることが可能となる。Further, according to the present embodiment, by controlling only the voltage values of the DC offset voltages V Offset 1 to V Offset m output from the output end of the multi-channel DAC 20, the m RTD oscillation elements 50 are controlled. It becomes possible to generate terahertz waves only in desired RTD oscillation elements.

なお、ＲＴＤ発振素子は、組成種及び個体差により、テラヘルツ波発振領域の電圧値となるＶNDR１及びＶNDR２が変動する。それ故、高速ＤＡＣ３０から出力される変調電圧ＶACの２値の電圧値の高圧側の電圧値は、ｍ個のＲＴＤ発振素子５０のテラヘルツ波発生領域の低圧側電圧ＶNDR１のそれぞれの最も小さいＶNDR１よりも小さい電圧値と設定することが望ましい。Note that in the RTD oscillation element, V NDR 1 and V NDR 2, which are voltage values in the terahertz wave oscillation region, vary depending on the composition type and individual differences. Therefore, the high-voltage side voltage value of the binary voltage values of the modulation voltage V AC output from the high-speed DAC 30 is the highest voltage value of each of the low-voltage side voltages V NDR 1 in the terahertz wave generation region of the m RTD oscillation elements 50. It is desirable to set a voltage value smaller than V NDR1 .

本実施例の説明及び図面において、多チャンネルＤＡＣ２０が動作対象外のＲＴＤ発振素子に供給する直流電圧ＶOffsetを０Ｖとしたが、これに限らない。駆動電圧ＶDrの最大値がテラヘルツ波発振領域内の電圧値となるバイアス電圧ＶNDR１～ＶNDR２の低圧側のバイアス電圧ＶNDR１以下となるように、多チャンネルＤＡＣ２０の動作対象外のＲＴＤ発振素子に対応する出力端から出力する直流のオフセット電圧ＶOffsetの電圧値を制御できればよい。In the description and drawings of this embodiment, the DC voltage V Offset that the multi-channel DAC 20 supplies to the non-operational RTD oscillation elements is set to 0V, but the present invention is not limited to this. In order for the maximum value of the drive voltage V Dr to be less than or equal to the bias voltage V NDR 1 on the low voltage side of the bias voltages V NDR 1 to V NDR 2, which is a voltage value within the terahertz wave oscillation region, the It is only necessary to be able to control the voltage value of the DC offset voltage V Offset output from the output end corresponding to the RTD oscillation element.

また、本実施例の説明及び図面において、高速ＤＡＣ３０が出力する変調電圧ＶACの２値の電圧値の低電圧側を０Ｖとしたが、これに限らない。Further, in the description and drawings of this embodiment, the lower voltage side of the binary voltage value of the modulation voltage V AC outputted by the high-speed DAC 30 is set to 0V, but the present invention is not limited to this.

また、本実施例の説明および図面において、ＲＴＤ発振素子に供給する直流電圧ＶOffsetを電圧ＶNDR１未満とし、ＶOffset+ＶACがテラヘルツ波発振領域内の電圧値であるバイアス電圧ＶNDR１～ＶNDR２の範囲内となるようにしたが、ＲＴＤ発振素子に供給する直流電圧ＶOffsetをバイアス電圧ＶNDR２以上のＲＴＤ発振素子の発振しない領域とし、ＶACの高圧側を０Ｖ、低圧側を－ＶACとしＶOffset－ＶACがＶNDR１～ＶNDR２の範囲内に制御することでもよい。In addition, in the description and drawings of this embodiment, the DC voltage V Offset supplied to the RTD oscillation element is set to be less than the voltage V NDR 1, and the bias voltage V NDR 1 is set such that V Offset +V AC is a voltage value within the terahertz wave oscillation region. ~ V NDR 2, but the DC voltage V Offset supplied to the RTD oscillation element is set to a region where the RTD oscillation element does not oscillate with bias voltage V NDR 2 or higher, and the high voltage side of V AC is set to 0 V and low voltage. It is also possible to set the side to -V AC and control V Offset -V AC within the range of V NDR 1 to V NDR 2.

また、本実施例の説明及び図面において、高速ＤＡＣ３０が出力する変調電圧ＶACを矩形波として説明したが、これに限らない。Further, in the description and drawings of this embodiment, the modulation voltage V AC outputted by the high-speed DAC 30 has been described as a rectangular wave, but the present invention is not limited to this.

上記の多チャンネルＤＡＣ２０及び高速ＤＡＣ３０の電圧値設定は、それぞれのＤＡＣの有する電圧値変更の時間応答性にあわせて設定すればよい。 The voltage values of the multi-channel DAC 20 and the high-speed DAC 30 may be set in accordance with the time responsiveness of the voltage value change of each DAC.

また、本実施例においては、テラヘルツ波計測装置に用いられる電磁波発生装置を例として説明した。しかし、ＲＴＤ発振素子によるテラヘルツ波の発生に限らず、電圧値が高速に変化する駆動電圧に応じて動作するような素子に対して用いることも可能である。 Further, in this embodiment, an electromagnetic wave generating device used in a terahertz wave measuring device has been described as an example. However, the present invention is not limited to the generation of terahertz waves by RTD oscillation elements, but can also be used for elements that operate in response to a drive voltage whose voltage value changes rapidly.

１０ 制御部
２０ 多チャンネルＤＡＣ
３０ 高速ＤＡＣ
４０ 加算器
５０ ｍ個のＲＴＤ発振素子10 Control unit 20 Multi-channel DAC
30 High speed DAC
40 Adder 50 m RTD oscillation elements

Claims (7)

駆動電圧が供給され、これに応答して各々が電磁波を発生する負性抵抗素子である複数の電磁波発生素子と、
前記複数の電磁波発生素子の各々に対応する複数の直流電圧を電圧可変に生成する直流電圧源と、
前記複数の電磁波発生素子に所定の２値の電圧値の間で電圧値が周期的に変化する変調電圧を生成する変調電圧源と、
前記複数の直流電圧の各々と前記変調電圧とを加算して前記複数の電磁波発生素子の各々に供給する供給部と、
前記直流電圧源を制御して前記複数の直流電圧の各々の電圧値を互いに独立して変化させることで、前記複数の電磁波発生素子のうち所望の電磁波発生素子のみに前記電磁波を発生させる制御部と、を備えることを特徴とする電磁波発生装置。 a plurality of electromagnetic wave generating elements each of which is a negative resistance element that is supplied with a driving voltage and generates electromagnetic waves in response to the driving voltage;
a DC voltage source that variably generates a plurality of DC voltages corresponding to each of the plurality of electromagnetic wave generating elements;
a modulated voltage source that generates a modulated voltage whose voltage value periodically changes between predetermined binary voltage values in the plurality of electromagnetic wave generating elements;
a supply unit that adds each of the plurality of DC voltages and the modulation voltage and supplies the sum to each of the plurality of electromagnetic wave generating elements;
A control unit that generates the electromagnetic wave only in a desired electromagnetic wave generating element among the plurality of electromagnetic wave generating elements by controlling the DC voltage source and changing the voltage value of each of the plurality of DC voltages independently of each other. An electromagnetic wave generator comprising: 前記制御部は、前記複数の電磁波発生素子に供給される前記直流電圧の各々の電圧値を制御することで、前記複数の電磁波発生素子のうち前記所望の電磁波発生素子のみを負性抵抗領域にバイアスすることを特徴とする請求項１に記載の電磁波発生装置。 The control unit controls the voltage value of each of the DC voltages supplied to the plurality of electromagnetic wave generating elements, thereby causing only the desired electromagnetic wave generating element among the plurality of electromagnetic wave generating elements to be in a negative resistance region. The electromagnetic wave generating device according to claim 1, wherein the electromagnetic wave generating device is biased . 前記変調電圧源が出力する前記変調電圧の最大電圧は、前記複数の電磁波発生素子のうち最低動作電圧が最も低い電磁波発生素子の最低動作電圧値よりも小さいことを特徴とする請求項１又は２に記載の電磁波発生装置。 3. A maximum voltage of the modulating voltage output by the modulating voltage source is smaller than a minimum operating voltage value of an electromagnetic wave generating element having the lowest minimum operating voltage among the plurality of electromagnetic wave generating elements. The electromagnetic wave generator described in . 前記制御部は、前記複数の電磁波発生素子のうち、前記電磁波を発生させる電磁波発生素子の各々に供給される駆動電圧を、最大電圧値が当該各々の電磁波発生素子の最大動作電圧と最低動作電圧の間の電圧値となり、かつ最低電圧が当該各々の電磁波発生素子の最低動作電圧よりも低い電圧値となるように前記直流電圧値を制御することを特徴とする請求項１～３のいずれか１に記載の電磁波発生装置。 The control unit controls a driving voltage supplied to each of the electromagnetic wave generating elements that generates the electromagnetic wave among the plurality of electromagnetic wave generating elements so that the maximum voltage value is the maximum operating voltage and the minimum operating voltage of each of the electromagnetic wave generating elements. 4. The DC voltage value is controlled so that the voltage value becomes a voltage value between the two, and the lowest voltage is lower than the lowest operating voltage of each electromagnetic wave generating element. 1. The electromagnetic wave generator according to 1. 前記制御部は、前記複数の電磁波発生素子のうち、前記電磁波を発生させない電磁波発生素子の各々に供給される駆動電圧を、最大電圧値が当該各々の電磁波発生素子の最低動作電圧よりも低い電圧値となるように前記直流電圧値を制御することを特徴とする請求項１～４のいずれか１に記載の電磁波発生装置。 The control unit controls the drive voltage supplied to each of the electromagnetic wave generating elements that do not generate electromagnetic waves among the plurality of electromagnetic wave generating elements to a voltage whose maximum voltage value is lower than the minimum operating voltage of each of the electromagnetic wave generating elements. The electromagnetic wave generating device according to any one of claims 1 to 4, characterized in that the DC voltage value is controlled so that the DC voltage value is the same as the DC voltage value. 前記電磁波は、テラヘルツ波であることを特徴とする請求項１に記載の電磁波発生装置。 The electromagnetic wave generating device according to claim 1, wherein the electromagnetic wave is a terahertz wave. 前記電磁波発生素子は、共鳴トンネルダイオードであることを特徴とする請求項１～６のいずれか１に記載の電磁波発生装置。 The electromagnetic wave generating device according to claim 1, wherein the electromagnetic wave generating element is a resonant tunnel diode.
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