JP7346090B2 - Imaging device and its control method - Google Patents

Description

The present invention relates to a technology for global electronic shutter photography in an imaging device.

In rolling shutter photography, signals are accumulated and read out row by row in an imaging device that uses a CMOS (complementary metal oxide semiconductor) image sensor. For fast-moving subjects, image distortion may occur due to the difference in signal accumulation time between the top and bottom of the screen. On the other hand, in global electronic shutter photography, by providing a signal holding section within one pixel of the image sensor, signals are accumulated for all pixels simultaneously, and it is possible to obtain a distortion-free captured image of a fast-moving subject.

The imaging device disclosed in Patent Document 1 is capable of global electronic shutter photography, and can perform phase-difference focus detection while displaying a live view image. Each pixel section constituting the image sensor includes two photoelectric conversion sections, two signal holding sections respectively connected to the photoelectric conversion sections, and one signal reading section. The signal of the first photoelectric conversion section is held in the first signal holding section and then read out, and the signal of the second signal holding section is further read out as a noise component due to leaked light. By subtracting the signal of the second signal holding section from the signal of the first signal holding section, it is possible to reduce the influence of light leakage to the signal holding section.

Japanese Patent Application Publication No. 2014-175934 Japanese Patent Application Publication No. 2013-172210

In the imaging device disclosed in Patent Document 1, a noise component due to leakage light generated when reading a signal of a first photoelectric conversion unit in one pixel is replaced with a signal of a signal holding unit corresponding to a second photoelectric conversion unit. This is a configuration that uses and removes. Therefore, it is not possible to read out the signals of the two photoelectric conversion units and simultaneously reduce the noise component due to leaked light.
An object of the present invention is to provide an imaging device that is capable of global electronic shutter photography and that can obtain higher quality images.

An imaging device according to an embodiment of the present invention is an imaging device including an imaging element in which a plurality of pixel sections each having a plurality of photoelectric conversion sections and a signal holding section are arranged, and the signal of a first photoelectric conversion section is transferred to a first and a plurality of first transfer means that transfer signals from the second photoelectric conversion section to the first and second signal holding sections, respectively. and controlling the first and second transfer means to read out the signal of the first signal holding section included in the first pixel section from the first signal readout section, and controlling the first and second transfer means, A control unit that performs control to read a signal from the second signal holding unit from a second signal reading unit provided in a second pixel unit adjacent to the first pixel unit. The control means transfers signals from the first and second photoelectric conversion units included in the second pixel unit to the first signal holding unit included in the second pixel unit, and reading a signal from the second signal holding section included in the section and a signal from the first signal holding section included in the second pixel section from the second signal reading section included in the second pixel section. Take control.

According to the present invention, it is possible to provide an imaging device capable of global electronic shutter photography and capable of acquiring higher quality images.

It is a front view (A) and a back view (B) which show an imaging device of an embodiment. FIG. 1 is a block diagram showing a schematic configuration of an imaging system. FIG. 2 is a circuit diagram showing a configuration example of two pixels of an image sensor. FIG. 2 is a schematic plan view showing the configuration of two pixels of the image sensor according to the first embodiment. 5 is a timing chart showing a driving sequence of an image sensor during continuous still image shooting. FIG. 3 is a schematic plan view showing the configuration of two pixels of an image sensor according to a second embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As an embodiment of the present invention, an imaging apparatus that performs phase-difference focus detection and is capable of acquiring images with a wide dynamic range through global electronic shutter photography will be described below in detail as an embodiment of the present invention. Although a digital still motion camera is shown as an example of an imaging device, the present invention is applicable to imaging devices installed in moving devices such as drones and automobiles, and various electronic devices having an imaging function.

[First embodiment]
FIG. 1 is an external view illustrating an imaging device according to this embodiment. FIG. 1(A) is a front view of the imaging device, and FIG. 1(B) is a rear view of the imaging device. The imaging device main body section 151 includes an imaging element, a shutter device, etc. therein.

The lens section includes a lens and a diaphragm that constitute the imaging optical system 152, and forms an optical image of the subject on the imaging element. A movable display section 153 is provided on the back side of the imaging device main body section 151, and displays shooting information and images on the screen. The display unit 153 has a display brightness range that can display even a wide dynamic range video without restricting the brightness range.

The operation switch (hereinafter referred to as switch ST) 154 is mainly used by the user to take still images. The switch ST154 is arranged on the upper surface of the imaging device main body section 151. The operation switch (hereinafter referred to as switch MV) 155 is used by the user to instruct the start and stop of video shooting. The switch MV 155 is arranged on the upper right side of the back surface of the imaging device main body section 151. A shooting mode selection lever 156 is arranged below the switch MV155. Furthermore, below this, a menu button 157 for shifting to a function setting mode of the imaging device and a playback button 161 for playing back recorded video on the screen of the display unit 153 are arranged. Up/down switches 158 and 159 and a dial 160 used for changing various setting values are arranged at the lower right portion of the back of the imaging device.

FIG. 2 is a block diagram showing a schematic configuration of an imaging system using the imaging device of this embodiment. The optical axis 180 of the imaging optical system 152 is shown by a dashed line. The aperture 181 is a member that adjusts the amount of light passing through the imaging optical system 152, and is controlled by the lens/aperture control section 182. In addition to aperture control, the lens/aperture control unit 182 performs drive control of movable lenses (zoom lens, focus lens, image blur correction lens, etc.) that constitute the imaging optical system 152. The optical filter 183 is a member that limits the wavelength of light incident on the image sensor 184 and the spatial frequency transmitted to the image sensor 184.

The image sensor 184 photoelectrically converts the optical image of the subject formed via the imaging optical system 152 into an electrical video signal. The image sensor 184 has a sufficient number of pixels, signal readout speed, color gamut, and dynamic range to meet a predetermined standard (such as the Ultra High Definition Television standard). The image sensor 184 includes, for example, a pixel section having a two-dimensional arrangement of a large number of unit pixels, a vertical scanning section, a column reading section, a horizontal scanning section, a signal processing section, an output section, and the like.

The digital signal processing unit 187 acquires the digital video data output from the image sensor 184, performs processing such as dynamic range expansion and various corrections, and then performs compression processing on the video data. The timing generator 189 outputs various timing signals to the image sensor 184 and the digital signal processor 187. Although FIG. 2 shows a configuration in which the timing generation section 189 is provided separately from the image sensor 184, it is possible to apply the present invention to a configuration example in which a circuit section having a part of the function of the timing generation section 189 is built into the image sensor 184. It is.

A system control CPU (central processing unit) 178 executes programs to control the entire imaging system. A system control CPU (hereinafter simply referred to as CPU) 178 controls each part of the imaging apparatus according to an operation instruction signal from an operation input section 179. For example, the CPU 178 controls the image sensor 184 and the digital signal processing section 187 via the timing generating section 189, and controls the movable lens and the diaphragm 181 via the lens/aperture control section 182. The operation input unit 179 includes input devices such as the switch ST154 and the switch MV155 shown in FIG. 1, various switch members, and a touch panel. Video memory 190 is a storage unit that temporarily stores video data.

The display interface unit 191 is an interface (hereinafter abbreviated as I/F) unit that connects the CPU 178 and the display unit 153. The display unit 153 includes a liquid crystal display or the like, and displays data of captured video, shooting information, etc. on the screen.

The recording I/F unit 192 is connected to a recording medium 193 and can record or read data to or from the recording medium 193. The recording medium 193 is a semiconductor memory or the like for recording video data, additional data, etc., and can be attached to and detached from the imaging device main body 151.

The external I/F section 196 includes a circuit section through which the CPU 178 communicates with an external device 197 such as a computer. The print I/F section 194 includes a circuit section for outputting data of photographed video to the printer 195 for printing in accordance with control instructions from the CPU 178. The printer 195 is a small inkjet printer or the like. The wireless I/F section 198 includes a circuit section for the CPU 178 to communicate via a computer network 199 such as the Internet.

3 is a circuit diagram showing a part of the image sensor 184, and FIG. 4 is a partial plan view of the image sensor 184. In each figure, among the many pixel elements included in the image sensor 184, the pixel element in the 1st row and 1st column (1,1) and the pixel element in the 2nd row and 1st column (2,1), which is the adjacent row, are shown. It shows. The configurations of pixel elements are the same in the first row, first column (1,1) and the second row, first column (2,1), and components with the same function are given the same reference numerals and will be explained. Other pixel elements have similar configurations. In the plan view of FIG. 4, the pixel element in the first row and first column (1,1) is shown by a solid line, and the pixel element in the second row and first column (2,1) is shown by a dotted line.

One pixel element in the image sensor 184 includes a first photoelectric conversion section 500_A, a second photoelectric conversion section 500_B, a first signal holding section 507_1, a second signal holding section 507_2, and a signal reading section. The basic structure of the image sensor 184 having a signal holding section is disclosed in Patent Document 2, so a description thereof will be omitted.

The first photoelectric conversion unit 500_A is composed of a photodiode (hereinafter also referred to as PD). A signal generated by light reception by the PD can be transferred to the first signal holding unit 507_1 by the first transfer transistor 501_A1, and can be transferred to the second signal holding unit 507_2 by the second transfer transistor 501_A2. Further, the third transfer transistor 503_A is connected to the power supply line 521 and the cathode of the PD, and has the function of an overflow gate for resetting the first photoelectric conversion unit 500_A.

Similarly, the second photoelectric conversion unit 500_B is configured by a PD. A signal generated by light reception by the PD can be transferred to the first signal holding unit 507_1 by the fourth transfer transistor 501_B1, and can be transferred to the second signal holding unit 507_2 by the fifth transfer transistor 501_B2. Further, the sixth transfer transistor 503_B is connected to the power supply line 521 and the cathode of the PD, and has the function of an overflow gate for resetting the second photoelectric conversion unit 500_B.

A charge signal transfer section is configured by the first transfer transistor 501_A1, the second transfer transistor 501_A2, the fourth transfer transistor 501_B1, and the fifth transfer transistor 501_B2.

A signal corresponding to the charge accumulated in the first signal holding section 507_1 is transferred to the floating diffusion (hereinafter abbreviated as FD) region 508 via the seventh transfer transistor 502_1. This signal is read out via the amplification transistor 505, selection transistor 506, and signal output line 523. The FD region 508, the amplification transistor 505, and the selection transistor 506 constitute a signal readout section. That is, the gate of the amplification transistor 505 is connected to the FD region 508, and the selection transistor 506 connected to the amplification transistor 505 is connected to the signal output line 523.

Further, the signal corresponding to the charge accumulated in the second signal holding unit 507_2 is transmitted to the FD region 508 provided in the pixel element in the second row and first column (2,1) of the adjacent row via the eighth transfer transistor 502_2. will be forwarded to. This signal is read out via the amplification transistor 505, selection transistor 506, and signal output line 523 in the pixel element in the second row and first column (2,1).

The reset transistor 504 is connected to the power supply line 520 and the FD region 508, and resets the FD region 508. The control signals to the gates of each transistor are as follows. In FIG. 3, the control signals in the first row are distinguished by (1), and the control signals in the second row are marked (2).

The first transfer transistor 501_A1 is controlled by a transfer pulse φGS_A1, and the second transfer transistor 501_A2 is controlled by a transfer pulse φGS_A2. The fourth transfer transistor 501_B1 is controlled by a transfer pulse φGS_B1, and the fifth transfer transistor 501_B2 is controlled by a transfer pulse φGS_B2.

The third transfer transistor 503_A and the sixth transfer transistor 503_B are controlled by a transfer pulse φOFG. The seventh transfer transistor 502_1 is controlled by a transfer pulse φTX1, and the eighth transfer transistor 502_2 is controlled by a transfer pulse φTX2. Further, the reset transistor 504 is controlled by a reset pulse φRES, and the selection transistor 506 is controlled by a selection pulse φSEL. Each control pulse is sent to each transistor from a vertical scanning circuit (not shown) based on a control signal from the timing generator 189.

FIG. 4 is a plan view showing a part of the image sensor, and the horizontal direction (left-right direction) is defined as the row direction, and the vertical direction (up-down direction) orthogonal to the horizontal direction is defined as the column direction. The circular frame represents the outer shape of the microlens. The two photoelectric conversion units 500_A and 500_B are arranged side by side in the row direction. A third transfer transistor 503_A and a sixth transfer transistor 503_B are arranged adjacent to the photoelectric conversion units 500_A and 500_B, respectively. Further, the two signal holding sections 507_1 and 507_2 are arranged in the column direction with the two photoelectric conversion sections 500_A and 500_B interposed therebetween. A seventh transfer transistor 502_1 is arranged across the first signal holding unit 507_1 and the FD area 508, and an eighth transfer transistor 502_2 is arranged across the second signal holding unit 507_2 and the FD area 508. .

The photoelectric conversion units 500_A, 500_B, signal holding units 507_1, 507_2, and FD area 508 of each row are arranged line-symmetrically with respect to the boundary of each row (see boundary line C). As a result, the noise components due to leaked light contained in the second signal holding section 507_2 and the first signal holding section 507_1, which are adjacent to each other at the boundary of each row (see boundary line C), are approximately equal. Furthermore, the image element in the last row has a second readout section (the pixel element in the second row and first column (2,1) in FIG. 4, which corresponds to the FD area 508 shown by the two-dot chain line). Note that depending on the specifications of the image sensor, the horizontal direction may be the column direction, and the vertical direction orthogonal to the horizontal direction may be the row direction.

A case in which still image photography is performed with an imaging device will be described below. Image signals corresponding to the charges accumulated in the first photoelectric conversion unit 500_A and the second photoelectric conversion unit 500_B, which constitute one pixel of the image sensor 184, are simultaneously transferred to the first signal holding unit 507_1 in the first row, for example. be transferred. In the case of global electronic shutter photography, the image signals corresponding to the charges accumulated in the first photoelectric conversion unit 500_A and the second photoelectric conversion unit 500_B at the same time in the adjacent row (second row) are 1 signal holding unit 507_1 at the same time. At this time, the second signal holding unit 507_2 in the first row is unused. Therefore, in this embodiment, a process is performed in which the noise component due to leakage light included in the image signal of the first signal holding unit 507_1 in the second row is subtracted by the noise component of the second signal holding unit 507_2 in the first row. . Thereby, it is possible to obtain a high-quality image with a high S/N ratio (signal-to-noise ratio).

FIG. 5 is a timing chart showing an example of the driving sequence of the image sensor. A control method during continuous shooting of still images will be described with reference to FIG. 5. By reducing the influence of leakage light on the signal holding unit in global electronic shutter photography, high-quality still images can be continuously acquired. The control described below is performed according to instructions from a timing generator 189 that constitutes a part of the control means. φV shown in FIG. 5 represents a vertical synchronization signal, and φH represents a horizontal synchronization signal. Below each control signal (see FIG. 3), a number representing the row is shown in parentheses. The time elapsed direction is from left to right, and indicates time t31 to t43.

At time t31, the transfer pulses φOFG of all rows go from high level to low level, and the third transfer transistor 503_A and the sixth transfer transistor 503_B are turned off. The reset state of the first photoelectric conversion unit 500_A and the second photoelectric conversion unit 500_B is released, and accumulation of signal charges is started. At this time, the reset pulse φRES and transfer pulses Tx1 and Tx2 of all rows are at high level, and the reset transistor 504 connected to the power supply line 520 is turned on. Therefore, the FD area 508 of all pixels and the first and second signal holding sections 507_1 and 507_2 are in a reset state.

At time t32, the reset pulse φRES(1) in the first row becomes low level. The reset transistor 504 in the first row is turned off, and the reset state of the FD region 508 in the first row is released. Further, at time t32, the transfer pulses φTx1 and φTx2 of all rows become low level. The reset state of the signal holding units 507_1 and 507_2 of all pixels is released, and accumulation of noise components due to leaked light is started.

At time t33, the selection pulse φSEL(1) in the first row becomes high level, and the selection transistor 506 in the first row is turned on. The reset noise component of the FD region 508 in the first row is read out via the amplification transistor 505 in the first row. Furthermore, at time t33, the first transfer pulse φGS_A1 and the fourth transfer pulse φGS_B1 of all rows become high level. The signal charges accumulated in the first photoelectric conversion unit 500_A and the second photoelectric conversion unit 500_B of all pixels are transferred to the first signal holding unit 507_1 of each pixel.

At time t35, the first row transfer pulse φTx1(1) and the first row selection pulse φSEL(1) become high level. The still image signal charges accumulated in the first signal holding section 507_1 in the first row are read out via the signal readout section (508, 505, 506) in the first row. Regarding the reset noise component of the FD area 508 included in the signal charge of the read still image, a signal processing circuit (not shown) subtracts only the previously read noise component from the signal and outputs the result. This signal processing circuit is provided, for example, in the image sensor 184, and subtracts noise components from signals read out from each pixel portion, and performs correlated double sampling processing and the like. Since the configuration of the signal processing circuit is well known, its explanation will be omitted.

In this manner, in the signal readout start row (first row), signals are read out from the signal readout section immediately after signal charges are transferred from the photoelectric conversion sections 500_A, 500_B to the signal holding section 507_1. Therefore, there is almost no noise due to light leakage to the signal holding unit 507_1.

Further, at time t35, the transfer pulse φOFG of all rows becomes high level, and the first photoelectric conversion unit 500_A and the second photoelectric conversion unit 500_B of all pixels enter the reset state. When the signal charges for a still image in the first row are read out, the signal charges in the second row are read out. At time t36, the second row reset pulse φRES(2) becomes low level, and the second row reset transistor 504 is turned off. The reset state of the FD area 508 in the second row is released.

At time t37, the first row reset pulse φRES(1) and transfer pulse φTx1(1) become high level. The reset transistor 504 connected to the power supply line 520 and the seventh transfer transistor 502_1 are turned on, and the first signal holding section 507_1 is reset together with the FD region 508 in the first row. Further, at time t37, the transfer pulse φTx2(1) and selection pulse φSEL(2) of the first row become high level. A noise component due to leakage light to the second signal holding section 507_2 in the first row and a reset noise component in the FD region 508 in the second row are read out via the amplification transistor 505 in the second row.

At time t38, the second row transfer pulse φTx1(2) and selection pulse φSEL(2) become high level. The still image signal charges accumulated in the first signal holding section 507_1 on the second row are read out together with noise components due to leaked light via the signal reading section (508, 505, 506) on the second row. Regarding the noise component due to leakage light generated in the first signal holding section 507_1 and the reset noise component of the FD area 508 included in the read signal charge for still image, only the noise component read out first is A signal processing circuit subtracts it from the signal and outputs it.

At time t39, the first row transfer pulse φTx1(1), the second row reset pulse φRES(2), and the transfer pulse φTx1(2) are at high level. Since the reset transistor 504 connected to the power supply line 520 is in the ON state, the first signal holding section 507_1 and the first signal holding section 507_2 are reset together with the FD region 508 on the second row.

From now on, in the same way, the still image signal charge accumulated in the first signal holding section 507_1 of each row is transferred to the outside of the image sensor 184 after the noise component of the second signal holding section 507_2 of the adjacent row is subtracted. Output. Therefore, a high quality image with a high S/N ratio is obtained. After the signal charge of the first still image is read out, the acquisition process of the second (third) still image is started from time t42 (t43).

In this embodiment, an example has been shown in which the signal processing unit within the image sensor 184 performs the subtraction process of subtracting a noise component from an image signal. The configuration is not limited to this, and the digital signal processing unit 187 may perform subtraction processing after reading the signal from the image sensor 184. Further, in this embodiment, an example is shown in which image signals are sequentially read out from the first row of the image sensor 184. In addition to this, there is a method of sequentially reading out image signals from the last row of the image sensor 184. In that case, the image signals of the first and second photoelectric conversion sections are transferred to the second signal holding section and read out, and control is performed to read out noise components due to leaked light from the first signal holding section.

When the imaging device performs known phase difference AF (autofocus), the signal charge of the first photoelectric conversion unit 500_A that constitutes one pixel of the imaging element 184 is transferred to, for example, the first signal holding unit 507_1. Further, the signal charges accumulated in the second photoelectric conversion section 500_B are transferred to the second signal holding section 507_2. These transfers occur simultaneously. It is possible to obtain an AF image (an image used for focus adjustment) whose accumulation time is synchronized from a plurality of signals having phase differences. Furthermore, after the signal charges in the first signal holding section 507_1 in a certain row are read out via the signal readout section, the signal charges in the second signal holding section 507_2 in the same row as the concerned row read out the signal charge in the signal readout section. read out via This control makes it possible to substantially equalize the noise components due to leakage light generated in the two signal holding sections, so that two symmetrical AF images can be obtained and good focus detection can be performed.

In this embodiment, when the signals of a plurality of photoelectric conversion units in a pixel are transferred to the first signal holding unit to read out a still image signal, the signals held by the second signal holding unit in an adjacent pixel are also transferred. Correlated double sampling is performed by including it in the noise composition. Since the noise component is subtracted from the signal containing the noise component, an image signal with reduced crosstalk components is obtained. According to this embodiment, global electronic shutter photography is possible, and by reducing the influence of leakage light on the signal holding section, it is possible to obtain higher quality images with less influence of crosstalk. .

[Second embodiment]
A second embodiment of the present invention will be described with reference to FIG. In this embodiment, differences from the first embodiment will be explained, and detailed explanations thereof will be omitted by reusing previously used symbols and symbols for matters similar to the first embodiment.

FIG. 6 is a schematic plan view showing the configuration of two pixels in the image sensor 184. The difference from FIG. 4 is the position of the FD area. The two photoelectric conversion units 500_A and 500_B are arranged side by side in the row direction (horizontal direction). Further, the two signal holding sections 507_1 and 507_2 are arranged in the column direction (vertical direction) with the two photoelectric conversion sections 500_A and 500_B in between. Furthermore, the FD area 508 is located between the signal holding section 507_2 of the pixel section in a predetermined row (first row in FIG. 6) and the signal holding section 507_1 of the pixel section in the adjacent row (second row in FIG. 6). It is arranged. In other words, the FD region 508 is connected to the signal holding section 507_2 arranged in parallel via the eighth transfer transistor 502_2, or the FD region 508 is connected to the signal holding section 507_1 arranged in parallel via the seventh transfer transistor 502_2. 502_1.

The photoelectric conversion units 500_A, 500_B, signal holding units 507_1, 507_2, and FD area 508 of each row are arranged line-symmetrically with respect to the boundary of each row (see boundary line C). As a result, the noise components due to leaked light contained in the second signal holding section 507_2 and the first signal holding section 507_1, which are adjacent to each other across the FD area 508 at the boundary of each row (see boundary line C), are approximately equal.

In the configuration of the image sensor of this embodiment, by controlling the drive of the image sensor according to the timing chart shown in FIG. 5, high-quality still images with reduced influence of light leakage to the signal holding section in global electronic shutter photography can be obtained. It is possible to obtain it.

178 System control CPU
184 Image sensor 189 Timing generator

Claims (7)

An imaging device including an imaging element in which a plurality of pixel sections each having a plurality of photoelectric conversion sections and a signal holding section are arranged,
a plurality of first transfer means that transfer the signals of the first photoelectric conversion section to the first and second signal holding sections, respectively;
a plurality of second transfer means that transfer the signals of the second photoelectric conversion section to the first and second signal holding sections, respectively;
The first and second transfer means are controlled to read out the signal of the first signal holding section included in the first pixel section from the first signal readout section, and read out the signal of the first signal holding section included in the first pixel section, and control means for controlling the reading of the signal from the second signal holding section from a second signal readout section provided in a second pixel section adjacent to the first pixel section;
The control means transfers signals from the first and second photoelectric conversion units included in the second pixel unit to the first signal holding unit included in the second pixel unit, and reading a signal from the second signal holding section included in the section and a signal from the first signal holding section included in the second pixel section from the second signal reading section included in the second pixel section. An imaging device characterized by performing control. The control means performs control to subtract the signal of the second signal holding unit included in the first pixel unit from the signal of the first signal holding unit included in the second pixel unit. The imaging device according to claim 1. 2. The first pixel section is a pixel section in a first row, and the second pixel section is a pixel section in a second row adjacent to the first row. The imaging device according to claim 2. The first and second photoelectric conversion units are arranged in a first direction, and the first and second signal holding units are arranged in the first direction with the first and second photoelectric conversion units in between. The first and second signal holding sections and the signal reading section are disposed in a second direction orthogonal to The imaging device according to any one of claims 1 to 3, characterized in that: The imaging device according to claim 4, wherein the first direction is a horizontal direction of the imaging element. The image sensor includes a plurality of microlenses and the first and second photoelectric conversion units corresponding to the microlenses, and acquires a plurality of signals having a phase difference from the first and second photoelectric conversion units. The imaging device according to any one of claims 1 to 5, characterized in that: A control method executed in an imaging device including an imaging device in which a plurality of pixel sections each having a plurality of photoelectric conversion sections and a signal holding section are arranged, the method comprising:
The imaging device includes:
a plurality of first transfer means that transfer the signals of the first photoelectric conversion section to the first and second signal holding sections, respectively;
a plurality of second transfer means that transfer the signals of the second photoelectric conversion section to the first and second signal holding sections, respectively;
The first and second transfer means are controlled to read out the signal of the first signal holding section included in the first pixel section from the first signal readout section, and read out the signal of the first signal holding section included in the first pixel section, and control means for controlling the reading of the signal from the second signal holding section from a second signal readout section provided in a second pixel section adjacent to the first pixel section;
The control method includes a step of transferring signals from the first and second photoelectric conversion units included in the second pixel unit to the first signal holding unit included in the second pixel unit; The second signal readout unit, which the second pixel unit includes, receives a signal from the second signal holding unit included in the pixel unit and a signal from the first signal holding unit included in the second pixel unit. 1. A method for controlling an imaging device, comprising: a step of controlling reading from the image pickup device.

Images