JP7294394B2 - Penetration electrode substrate - Google Patents

Description

TECHNICAL FIELD The present invention relates to a through electrode substrate having through electrodes penetrating through the front and back surfaces of a substrate, and more particularly to a through electrode substrate used as an interposer substrate for connecting between a plurality of elements. The present invention also relates to a semiconductor device using a through electrode substrate.

2. Description of the Related Art In recent years, there has been progress in the development of through electrode substrates, which serve as interposers between LSI chips and which have conductive portions that electrically connect the front and back surfaces of the substrate. In such a through electrode substrate, the through electrode is formed by filling the inside of the through hole with a conductive material by electrolytic plating or the like.

An LSI chip having narrow-pitch, short-dimension wiring is arranged on the upper surface of the through electrode substrate. Also, a semiconductor mounting substrate having wide-pitch, long-dimension wiring is arranged on the lower surface of the through electrode substrate. The following documents are available as prior art of through electrode substrates.

Japanese Patent Application No. 2005-514387 Japanese Patent Application No. 2010-548586 Japanese Patent Application No. 2003-513037 Japanese Patent Application No. 2011-528851 WO2010/087483 WO2005/034594 WO2003/007370 WO2011/024921 Patent No. 4241202 Patent No. 4203277 Patent No. 4319831 Patent No. 4022180 Patent No. 4564342 Patent No. 4835141 Patent No. 5119623 JP 2009-23341 A Patent No. 2976955 JP-A-2003-243396 JP 2003-198069 A Patent No. 4012375

In the through electrode, as described above, the through hole is filled with a conductive material, or a conductive film is formed along the side wall of the through hole, and the rest of the through hole is filled with an insulating resin. It may be filled as As for the through electrode, in order to prevent the filler filled in the through hole from coming off, there is a known technique of tapering the inside of the through hole or forming a large number of crater-like irregularities inside the through hole. (Patent Document 3, Patent Document 4).

However, even if such a technique is used to prevent the filling from coming off, a gap may occur between the filling and the side wall of the through-hole, causing gas to accumulate there. If heat is applied to the substrate in this state, in the conventional technology, the gas accumulated in the gas reservoir expands, causing breakage of the through-holes and the filling, and there is a risk that the filling will fall off. There is

Accordingly, the present invention has been made in view of such problems, and is a through electrode substrate that solves the problems caused by gas accumulated in gas reservoirs in through holes and that enables prevention of falling off of fillers in through holes. and a semiconductor device.

According to one embodiment of the invention,
a substrate having a through hole passing through the first opening on the first surface and the second opening on the second surface;
a filler disposed within the through hole,
the second opening is larger than the first opening, and a minimum opening having the smallest area in plan view exists between the first opening and the second opening;
A through electrode substrate is provided, comprising a gas release portion disposed so as to be in contact with the filler exposed on one of the first surface and the second surface.

Also, according to one embodiment of the present invention,
penetrating through the first opening on the first surface and the second opening on the second surface, a first portion between the first opening and the second opening, and a plane view from the first portion and the first opening a substrate having a through hole having a second portion with a large area;
a filler disposed within the through hole,
A through electrode substrate is provided, comprising a gas release portion disposed so as to be in contact with the filler exposed on one of the first surface and the second surface.

Moreover, at least a portion of the side wall of the through hole may include a curved line having an inflection point in a cross-sectional view.

The gas release portion may be an insulating resin that releases the gas inside the through hole to the outside.

At least a portion of the gas release portion may also be arranged between the side wall of the through hole and the filler.

The gas discharge part may have an opening, and the area of the opening of the gas discharge part in plan view may increase as the distance from the substrate side increases.

A conductive film may be arranged between the side wall of the through hole and the filler.

An insulating film and a conductive film may be arranged in this order from the side wall of the through hole between the side wall of the through hole and the filler.

The conductive film may also be arranged on the first surface and the second surface.

The filling may be a conductive material.

The filling may be an insulating material.

The substrate may be an insulating substrate.

The substrate may be a conductive substrate.

The gas release part has an opening,
You may make it the opening of the said gas discharge part overlap with a said 1st opening and a said 2nd opening.

The gas release part has an opening,
The opening of the gas release portion may not overlap the first opening and the second opening.

The gas release part is arranged on the first surface and the second surface,
The area where the gas release portion on the second surface side contacts the filler may be larger than the area where the gas release portion on the first surface side contacts the filler.

Further, according to one embodiment of the present invention, there is provided a semiconductor device having an LSI substrate, a semiconductor chip, and the through electrode substrate of the present invention.

ADVANTAGE OF THE INVENTION According to this invention, the trouble by the gas which collects in the gas reservoir in a through-hole can be eliminated, the fall-off of the filler in a through-hole can be prevented, and a highly reliable through electrode substrate and semiconductor device can be provided. .

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the structure of the penetration electrode substrate 100 of this invention which concerns on 1st Embodiment. It is a figure which shows the structure of the penetration electrode substrate 200 of this invention which concerns on 2nd Embodiment. It is a figure which shows the structure of the penetration electrode substrate 300 of this invention which concerns on 3rd Embodiment. It is a figure which shows the structure of the penetration electrode substrate 400 of this invention which concerns on 4th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 100 of this invention which concerns on 5th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 100 of this invention which concerns on 6th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 100 of this invention which concerns on 7th Embodiment. An example of misalignment of the opening (via) 110 on the filler 105 in the through electrode substrate 100 of the present invention according to the seventh embodiment is shown. It is a figure which shows the structure of the penetration electrode substrate 200 of this invention which concerns on 7th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 300 of this invention which concerns on 7th Embodiment. It is a figure which shows the structure of the penetration electrode substrate 400 of this invention which concerns on 7th Embodiment. It is a figure which shows the structure of the semiconductor device 1000 of this invention which concerns on 8th Embodiment. It is a figure which shows the structure of the semiconductor device 1000 of this invention which concerns on 8th Embodiment. It is a figure which shows the structure of the semiconductor device 1000 of this invention which concerns on 8th Embodiment.

Hereinafter, the through electrode substrate of the present invention will be described in detail with reference to the drawings. It should be noted that the through electrode substrate of the present invention is not limited to the following embodiments, and can be implemented with various modifications. In all the embodiments, the same constituent elements will be described with the same reference numerals.

(First embodiment)
A configuration of a through electrode substrate 100 of the present invention according to a first embodiment will be described with reference to FIG. FIG. 1(A) is a plan view of the through electrode substrate 100 of the present invention according to the present embodiment viewed from above. FIG. 1(B) is a cross-sectional view taken along line AA' of FIG. 1(A). In addition, both FIGS. 1A and 1B show part of the through electrode substrate 100 of the present invention according to the present embodiment for convenience of explanation.

A through electrode substrate 100 of the present invention according to this embodiment includes a substrate 102 , a through hole 104 , a filler 105 , insulating layers 106 and 108 , and vias 110 and 112 . A wiring structure, an electronic component, and the like may be further mounted on each of the first surface 102a and the second surface 102b of the substrate 102. FIG.

In this embodiment, the substrate 102 has insulating properties, and can be made of glass, sapphire, resin, or the like, for example. The thickness of the substrate 102 is not particularly limited, but can be appropriately set within a range of, for example, 10 μm to 1 mm.

The through-hole 104 is a through-hole passing through a first opening 104a arranged on the first surface 102a of the substrate 102 and a second opening 104b arranged on the second surface 102b opposite to the first surface 102a. be. The shape of the through-hole 104 is not constant but changes from the first opening 104a toward the second opening 104b. In other words, the shape of the side wall of the through-hole 104 is not constant but changes from the first opening 104a toward the second opening 104b. The through hole 104 typically has a second opening 104b larger than the first opening 104a and has a constriction (constriction) between the first opening 104a and the second opening 104b. More specifically, the through hole 104 has a minimum opening portion 104c having a minimum area M in plan view (that is, viewed from the top), and a side wall of the through hole 104 in cross section (that is, viewed from the AA' cross section). has an inflection point 104d (a curve with the inflection point 104d) where is changed by a curve, and a maximum opening 104e having a maximum area L in plan view (that is, viewed from the top). In the present embodiment, the inflection point 104d of the through-hole 104 is located closer to the second opening 104b than the center of the through-hole 104, but the present invention is not limited to this. 104 d may be arranged closer to the first opening 104 a than the center of the through hole 104 . The through hole 104 can be formed by subjecting the substrate 102 to etching, laser processing, sandblasting, or the like. The size of the through-holes 104 is not particularly limited, but it is preferable to set the size of the maximum opening 104e to 200 μm or less in order to achieve a narrower pitch.

A filler 105 is arranged inside the through-hole 104 . In this embodiment, the filler 105 is a conductive material, and for example, a conductive material such as a deposit of a metal such as Cu, a conductive paste containing Cu or the like, or a conductive resin is used. When a metal such as Cu is used as the filler 105, an electrolytic plating filling method is used. When a fluid conductive paste or conductive resin is used as a material for the filler 105, the through holes 104 are filled with the conductive paste or conductive resin using a spatula, a scraper, or the like, and then heat treatment or the like is performed. The fill 105 can be formed by.

The insulating layers 106 and 108 are disposed directly or via an intermediate layer (not shown) on the first surface 102a and the second surface 102b of the substrate 102, respectively. The insulating layers 106 and 108 are made of, for example, an insulating resin material such as polyimide or benzocyclobutene, and may be an insulator having a gas releasing function. The insulating layers 106 and 108 act as gas release portions that release the gas generated and released inside the through hole 104 to the outside (permeate the gas). At least one of the insulating layers (gas release portions) 106 and 108 is arranged to contact the filler 105 exposed on the first surface 102a and the second surface 102b of the substrate 102 . If there is a gap between the side wall of through-hole 104 and filler 105, part of insulating layers (gas release portions) 106 and 108 are arranged between the side wall of through-hole 104 and filler 105. That is, the insulating layers 106 and 108 may enter between the side wall of the through hole 104 and the filling 105 . The insulating layers 106 and 108 are formed by, for example, using a photosensitive insulating material and performing desired patterning by photolithography.

In the through electrode substrate 100 of the invention according to the present embodiment, as described above, the through hole 104 has the minimum opening 104c, the inflection point 104d, and the maximum opening 104e. This through hole 104 is filled with a filler 105 . In the case shown in FIG. 1, the portion of the through hole 104 on the second surface 102b side has a greater amount of the filler 105 than the portion of the through hole 104 on the first surface 102a side. The amount of gas released is also greater. The area where the gas release portion 106 on the second surface 102b side contacts the filler 105 is larger than the area where the gas release portion 108 on the first surface 102a side contacts the filler 105, and the second surface side The amount of gas discharged from the gas discharge portion 108 may be increased. Furthermore, since the second opening 104b is larger than the first opening 104a, the contact area relationship described above can be easily obtained by making the diameters of the vias 110 and 112 substantially the same.

Vias 110 and 112, which are openings, are holes formed in insulating layers (gas release portions) 106 and 108, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 110 and 112 by plating or sputtering. These wirings are in contact with the filler 105 arranged in the through hole 104, and the wirings are electrically connected to each other. As shown in FIG. 1B, vias 110 and 112, which are openings in the insulating layers (gas release portions) 106 and 108, are formed to overlap the first and second openings of the substrate 102, respectively. . In other words, vias 110 and 112, which are openings in insulating layers (gas release portions) 106 and 108, are located directly above the first and second openings in substrate 102, respectively. In addition, part of the vias 110 and/or 112, which are the openings of the insulating layers (gas release portions) 106 and 108, are formed so as to overlap the first opening 104a and the second opening 104b of the substrate 102, respectively. can be

In the through electrode substrate 100 of the invention according to the present embodiment, as described above, the through hole 104 has the minimum opening 104c, the inflection point 104d, and the maximum opening 104e. This through hole 104 is filled with a filler 105 . By providing a difference in size between the first opening 104a and the second opening 104b, it is possible to secure filling performance of the filler. When a force acts on the filler 105 toward the first surface 102a, the presence of the inflection point 104d prevents the filler 105 from falling off the substrate 100. FIG. Also, when a force acts on the filler 105 in the direction of the second surface 102b, the presence of the minimum opening 104c can prevent the filler 105 from dropping off from the substrate 100. FIG. The through electrode substrate 100 according to this embodiment may have both or only one of the minimum opening 104c and the maximum opening 104d. Therefore, in the through electrode substrate 100 of the present invention according to the present embodiment, it is possible to ensure the fillability of the filler 105 and prevent the filler 105 from coming off in any direction.

Further, in the through electrode substrate 100 of the present invention according to the present embodiment, as described above, at least one of the insulating layers (gas release portions) 106 and 108 is exposed on the first surface 102a and the second surface 102b of the substrate 102. It is arranged so as to be in contact with the filling 105 . Therefore, the insulating layer (gas release portion) 106 and/or 108 can release the gas generated and released inside the through hole 104 to the outside, and the problem caused by the gas accumulated in the gas reservoir inside the through hole 104 can be eliminated. It is possible to prevent the filler 105 from falling off from the through-hole 104 and provide a highly reliable through-electrode substrate.

Although it is preferable that there is no space between the side wall of through-hole 104 and filler 105 , a slight space or gap may occur between the side wall of through-hole 104 and filler 105 . Even if such a space or gap occurs, the through electrode substrate 100 of the present invention according to this embodiment can prevent the filling portion 105 from coming off.

(Second embodiment)
A configuration of a through electrode substrate 200 of the present invention according to a second embodiment will be described with reference to FIG. FIG. 2(A) is a plan view of the through electrode substrate 200 of the present invention according to the present embodiment viewed from above. FIG. 2(B) is a cross-sectional view taken along line AA' of FIG. 2(A). In addition, both FIGS. 2A and 2B show part of the through electrode substrate 200 of the present invention according to the present embodiment for convenience of explanation.

A through electrode substrate 200 of the present invention according to this embodiment includes a substrate 202 , a through hole 204 , a filler 205 , insulating layers 206 and 208 , a conductive film 207 and vias 210 and 212 . A wiring structure, an electronic component, and the like may be further mounted on each of the first surface 202a and the second surface 202b of the substrate 202 .

In this embodiment, the substrate 202 has insulating properties, and can be made of glass, sapphire, resin, or the like, for example. The thickness of the substrate 202 is not particularly limited, but can be appropriately set within a range of 10 μm to 1 mm, for example.

The through-hole 204 is a through-hole penetrating through a first opening 204a arranged on the first surface of the substrate 202 and a second opening 204b arranged on the second surface 202b opposite to the first surface 202a. . The shape of the through-hole 204 is not constant but changes from the first opening 204a toward the second opening 204b, as in the first embodiment described above. In other words, the shape of the side wall of the through-hole 204 is not constant but changes from the first opening 204a toward the second opening 204b. The through-hole 204 typically has a second opening 204b larger than the first opening 204a and has a constriction (constriction) between the first opening 204a and the second opening 204b. More specifically, the through-hole 204 has a minimum opening 204c having a minimum area M in plan view (that is, viewed from the top), and a side wall of the through-hole 204 in cross-section (that is, viewed from the AA' cross section). has an inflection point 204d (a curve having an inflection point 204d) where is changed by a curve, and a maximum opening 204e having a maximum area L in plan view (that is, viewed from the top). In the present embodiment, the inflection point 204d of the through-hole 204 is located closer to the second opening 204b than the center of the through-hole 204, but the present invention is not limited to this. 204 d may be arranged closer to the first opening 204 a than the center of the through hole 204 . The through hole 104 can be formed by subjecting the substrate 102 to etching, laser processing, sandblasting, or the like. The size of the through-holes 104 is not particularly limited, but it is preferable to set the size of the maximum opening 104e to 200 μm or less in order to achieve a narrower pitch.

A conductive film 207 and a filler 205 are arranged inside the through hole 204 . The conductive film 207 is arranged on the sidewall side of the through-hole 204 , and part of the conductive film 207 is arranged above the first surface 202 a and the second surface 202 b of the substrate 202 . In this embodiment, the filler 205 is an insulating material, and for example, an organic material such as polyimide or benzocyclobutene, or an inorganic material such as silicon oxide or silicon nitride is used. The conductive film 207 can be formed by, for example, a plating method, a CVD method, or the like. The filling 205 can be formed, for example, by a method such as suction or pushing.

The insulating layers 206 and 208 are disposed on the first surface 202a and the second surface 202b of the substrate 202, respectively, directly or via an intermediate layer (not shown). The insulating layers 206 and 208 are made of an insulating resin material such as polyimide, benzocyclobutene, or the like, and may be any insulating material having a gas releasing function. The insulating layers 206 and 208 act as gas release portions that release the gas generated and released inside the through hole 204 to the outside (permeate the gas). In this embodiment, insulating layers (gas release portions) 206 and 208 are arranged to cover and contact the filler 205 exposed on the first surface 202a and the second surface 202b of the substrate 202 . At least one of the insulating layers (gas release portions) 206 and 208 may be arranged to contact the filler 205 exposed on the first surface 202a and the second surface 202b of the substrate 202 . If there is a gap between the side wall of the through hole 204 and the filler 205, part of the insulating layers (gas release portions) 206 and 208 are arranged between the side wall of the through hole 204 and the filler 205. That is, the insulating layers 206 and 208 may enter between the side wall of the through hole 204 and the filling 205 . The insulating layers 206 and 208 are formed by, for example, using a photosensitive insulating material and performing desired patterning by photolithography.

In the through electrode substrate 200 of the invention according to the present embodiment, as described above, the through hole 204 has the minimum opening 204c, the inflection point 204d and the maximum opening 204e. This through hole 204 is filled with a filler 205 . In the case shown in FIG. 2, the portion of the through hole 204 on the side of the second surface 202b has a greater amount of the filler 205 than the portion of the through hole 204 on the side of the first surface 202a, and the amount of gas released is will also increase. Therefore, the area where the gas release portion 206 on the second surface 202b side contacts the filler 205 is larger than the area where the gas release portion 208 on the first surface side contacts the filler 205, and the second surface The amount of gas released from the side gas release portion 208 may be increased.

Vias 210 and 212, which are openings, are holes formed in 207 insulating layers (gas release portions) 206 and 208 on the conductive film 207 on the first surface 202a and the second surface 202b, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 210 and 212 by plating or sputtering. These wirings are in contact with the conductive films 207 on the first surface 202a and the second surface 202b, and the wirings are electrically connected to each other. In addition, a part of the vias 210 and/or 212, which are openings of the insulating layers (gas release portions) 206 and 208, are formed so as to overlap the first opening 204a and the second opening 204b of the substrate 202, respectively. can be

In the through electrode substrate 200 of the invention according to the present embodiment, as described above, the through hole 204 has the minimum opening 204c, the inflection point 204d and the maximum opening 204e. This through hole 204 is filled with a filler 205 . By providing a difference in size between the first opening 204a and the second opening 204b, it is possible to secure filling performance of the filler. When a force acts on the filler 205 in the direction of the first surface 202a, the filler 205 can be prevented from falling off from the substrate 200 due to the inflection point 204d. In addition, when a force acts on the filler 205 in the direction of the second surface 202b, the presence of the minimum opening 204c can prevent the filler 205 from dropping off from the substrate 200. FIG. The through electrode substrate 200 according to the present embodiment may have both or only one of the minimum opening 204c and the maximum opening 204d. Therefore, in the through electrode substrate 200 of the present invention according to the present embodiment, it is possible to ensure the fillability of the filler 205 and to prevent the filler 205 from coming off in any direction.

Moreover, in the through electrode substrate 200 of the present invention according to the present embodiment, at least one of the insulating layers (gas release portions) 206 and 208 is exposed on the first surface 202a and the second surface 202b of the substrate 202, as described above. It is arranged so as to contact the filling 205 which Therefore, the insulating layers (gas release portions) 206 and/or 208 can release the gas generated and released inside the through hole 204 to the outside, and problems caused by the gas accumulated in the gas pool inside the through hole 204 can be eliminated. It is possible to prevent the filler 205 from falling off from the through-hole 204 and provide a highly reliable through-electrode substrate.

Although it is preferable that there is no space between the conductive film 207 and the filler 205 arranged on the side wall of the through-hole 204, a slight space or gap is generated between the conductive film 207 and the filler 205. In some cases, it may end up. Even if such a space or gap is generated, the filling portion 205 can be prevented from coming off in the through electrode substrate 200 of the present invention according to the present embodiment.

(Third embodiment)
A configuration of a through electrode substrate 300 of the present invention according to a third embodiment will be described with reference to FIG. FIG. 3(A) is a plan view of the through electrode substrate 300 of the present invention according to the present embodiment viewed from above. FIG. 3B is a cross-sectional view taken along line AA' of FIG. 3A. In addition, both FIGS. 3A and 3B show part of the through electrode substrate 300 of the present invention according to the present embodiment for convenience of explanation.

A through electrode substrate 300 of the present invention according to this embodiment includes a substrate 302 , a through hole 304 , a filler 305 , insulating layers 306 and 308 , an insulating layer 307 and vias 310 and 312 . A wiring structure, an electronic component, and the like may be further mounted on each of the first surface 302a and the second surface 302b of the substrate 302 .

In this embodiment, the substrate 302 has conductivity, and can be made of, for example, a semiconductor such as silicon, or a metal such as stainless steel. The thickness of the substrate 302 is not particularly limited, but can be appropriately set within a range of 10 μm to 1 mm, for example.

The through-holes 304 are arranged on the second surface 302b opposite to the first surface 302a of the substrate 302 and the first opening 304a arranged on the first surface 302a of the substrate 302, as in the first and second embodiments described above. It is a through-hole which penetrates the 2nd opening 304b. The shape of the through-hole 304 is not constant but changes from the first opening 304a toward the second opening 304b. In other words, the shape of the side wall of the through-hole 304 is not constant but changes from the first opening 304a toward the second opening 304b. The through-hole 304 typically has a second opening 304b larger than the first opening 304a and has a constriction (constriction) between the first opening 304a and the second opening 304b. More specifically, the through hole 304 has a minimum opening portion 304c having a minimum area M in plan view (that is, viewed from the top), and a side wall of the through hole 304 in cross section (that is, viewed from the AA' cross section). has an inflection point 304d (a curve having an inflection point 304d) where is changed by a curve, and a maximum opening 304e having a maximum area L in plan view (that is, viewed from the top). In the present embodiment, the inflection point 304d of the through-hole 304 is located closer to the second opening 304b than the center of the through-hole 304, but the present invention is not limited to this. 304 d may be arranged closer to the first opening 304 a than the center of the through hole 304 . The through holes 304 can be formed by subjecting the substrate 302 to etching, laser processing, sandblasting, or the like. The size of the through-holes 304 is not particularly limited, but it is preferable to set the size of the maximum opening 304e to 200 μm or less in order to achieve a narrower pitch.

An insulating layer 307 and a filler 305 are arranged inside the through hole 304 . The insulating film 307 is arranged on the sidewall side of the through hole 304 , and a part of the insulating film 307 is arranged above the first surface and the second surface of the substrate 302 . In this embodiment, the filler 305 is a conductive material, and for example, a conductive material such as a deposit of a metal such as Cu, a conductive paste containing Cu or the like, or a conductive resin is used. When a metal such as Cu is used as the filler 305, an electrolytic plating filling method is used. When a fluid conductive paste or conductive resin is used as the filling material 305, the through holes 304 are filled with the conductive paste or conductive resin using a spatula, a scraper, or the like, and then heat treatment or the like is performed. Filler 305 can be formed by

The insulating layers 306 and 308 are disposed on the first surface 302a and the second surface 302b of the substrate 302, respectively, directly or via an intermediate layer (not shown). The insulating layers 306 and 308 are made of, for example, an insulating resin material such as polyimide or benzocyclobutene, and may be any insulator having a gas releasing function. The insulating layers 306 and 308 act as gas release portions that release the gas generated and released inside the through hole 304 to the outside (permeate the gas). At least one of the insulating layers (gas release portions) 306 and 308 is arranged to contact the filler 305 exposed on the first and second surfaces of the substrate 302 . If there is a gap between the side wall of the through hole 304 and the filler 305, part of the insulating layers (gas release portions) 306 and 308 are arranged between the side wall of the through hole 304 and the filler 305. In other words, the insulating layers 306 and 308 may enter between the side wall of the through hole 304 and the filling 305 . The insulating layers 306 and 308 are formed by performing desired patterning by photolithography using, for example, a photosensitive insulating material.

In the through electrode substrate 300 of the invention according to the present embodiment, as described above, the through hole 304 has the minimum opening 304c, the inflection point 304d, and the maximum opening 304e. The through hole 304 is filled with a filler 305 . In the case shown in FIG. 3, the portion of the through hole 304 on the side of the second surface 302b has a greater amount of the filler 305 than the portion of the through hole 304 on the side of the first surface 302a. The amount of gas that is released also increases. Therefore, the area where the gas release portion 306 on the second surface side contacts the filler 305 is larger than the area where the gas release portion 308 on the first surface 302a side contacts the filler 305, and the second surface The amount of gas discharged from the gas discharge portion 308 on the side of 302b may be increased. Furthermore, since the second opening 304b is larger than the first opening 304a, the contact area relationship described above can be easily obtained by making the diameters of the vias 310 and 312 substantially the same.

Vias 310 and 312, which are openings, are holes formed in insulating layers (gas release portions) 306 and 308, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 310 and 312 by plating or sputtering. These wirings are in contact with the filler 305 arranged in the through hole 304, and the wirings are electrically connected to each other. As shown in FIG. 3B, vias 310 and 312, which are openings of insulating layers (gas release portions) 306 and 308, are formed to overlap the first opening 304a and the second opening 304b of the substrate 302, respectively. be done. In other words, vias 310 and 312, which are openings in insulating layers (gas release portions) 306 and 308, are located directly above first opening 304a and second opening 304b in substrate 302, respectively. In addition, a part of the vias 310 and/or 312, which are openings of the insulating layers (gas release portions) 306 and 308, are formed so as to overlap the first opening 304a and the second opening 304b of the substrate 302, respectively. can be

In the through electrode substrate 300 of the invention according to the present embodiment, as described above, the through hole 304 has the minimum opening 304c, the inflection point 304d, and the maximum opening 304e. The through hole 304 is filled with a filler 305 . By providing a difference in size between the first opening 304a and the second opening 304b, it is possible to secure filling performance of the filler. When a force acts on the filler 305 in the direction of the first surface 302a, the filler 305 can be prevented from falling off from the substrate 300 due to the presence of the inflection point 304d. Also, when a force acts on the filler 305 in the direction of the second surface 302a, the presence of the minimum opening 304c can prevent the filler 305 from dropping off from the substrate 300. FIG. The through electrode substrate 300 according to this embodiment may have both or only one of the minimum opening 304c and the maximum opening 304d. Therefore, in the through electrode substrate 300 of the present invention according to the present embodiment, it is possible to ensure the fillability of the filler 305 and to prevent the filler 305 from coming off in any direction.

Moreover, in the through electrode substrate 300 of the present invention according to the present embodiment, at least one of the insulating layers (gas release portions) 306 and 308 is exposed on the first surface 302a and the second surface 302b of the substrate 302, as described above. It is arranged so as to contact the filling 305 which Therefore, the insulating layers (gas release portions) 306 and/or 308 can release the gas generated and released inside the through hole 304 to the outside, and problems caused by the gas accumulated in the gas reservoir inside the through hole 304 can be eliminated. This makes it possible to prevent the filler 305 from falling off from the through-hole 304, thereby providing a highly reliable through-electrode substrate.

Although it is preferable that there is no space between the insulating layer 307 and the filler 305 arranged on the side wall of the through hole 304, there may be some space or gap between the insulating layer 307 and the filler 305. Sometimes it's gone. Even if such a space or gap is generated, it is possible to prevent the filling portion 305 from coming off in the through electrode substrate 300 of the present invention according to the present embodiment.

(Fourth embodiment)
A configuration of a through electrode substrate 400 of the present invention according to a fourth embodiment will be described with reference to FIG. FIG. 4(A) is a plan view of the through electrode substrate 400 of the present invention according to the present embodiment viewed from above. FIG. 4(B) is a cross-sectional view taken along line AA' of FIG. 4(A). 4A and 4B both show part of the through electrode substrate 400 of the present invention according to the present embodiment for convenience of explanation.

A through electrode substrate 400 of the present invention according to this embodiment includes a substrate 402 , a through hole 404 , a filler 405 , insulating layers 406 and 408 , an insulating layer 407 , a conductive film 409 and vias 410 and 412 . A wiring structure, an electronic component, and the like may be further mounted on each of the first surface 402a and the second surface 402b of the substrate 402. FIG.

In this embodiment, the substrate 402 is electrically conductive, and can be made of, for example, a semiconductor such as silicon or a metal such as stainless steel. The thickness of the substrate 402 is not particularly limited, but can be appropriately set within a range of, for example, 10 μm to 1 mm.

The through hole 404 is a through hole passing through a first opening 404a arranged on the first surface 402a of the substrate 402 and a second opening 404b arranged on the second surface 402b opposite to the first surface 402a. be. The shape of the through-hole 404 is not constant but changes from the first opening 404a toward the second opening 404b, as in the first to third embodiments described above. In other words, the shape of the side wall of the through-hole 404 is not constant but changes from the first opening 404a toward the second opening 404b. The through-hole 404 typically has a second opening 404b larger than the first opening 404a and has a constriction (constriction) between the first opening 404a and the second opening 404b. More specifically, the through-hole 404 has a minimum opening 404c having a minimum area M in plan view (that is, viewed from the top), and a side wall of the through-hole 404 in cross-section (that is, viewed from the AA' cross section). has an inflection point 404d (a curve having an inflection point 404d) where is changed by a curve, and a maximum opening 404e having a maximum area L in plan view (that is, viewed from the top). In the present embodiment, the inflection point 404d of the through-hole 404 is arranged closer to the second opening 404b than the center of the through-hole 404, but the present invention is not limited to this. 404 d may be arranged closer to the first opening 404 a than the center of the through hole 404 . The through holes 404 can be formed by subjecting the substrate 402 to etching, laser processing, sandblasting, or the like. The size of the through-holes 404 is not particularly limited, but it is preferable to set the size of the maximum opening 404e to 200 μm or less in order to achieve a narrower pitch.

An insulating layer 407 , a conductive film 409 and a filler 405 are arranged inside the through hole 404 . The insulating layer 407 is arranged on the sidewall side of the through-hole 404 , and a part of the insulating layer 407 is arranged on the first surface and the second surface of the substrate 402 . The conductive film 409 is arranged on the insulating layer 407 side of the through-hole 404 , and part of the conductive film 409 is arranged on the first surface and the second surface of the substrate 402 . In this embodiment, the filler 405 is an insulating material, and for example, an organic material such as polyimide or benzocyclobutene, or an inorganic material such as silicon oxide or silicon nitride is used. The conductive film 407 can be formed by, for example, a plating method, a CVD method, or the like. The filling 405 can be formed, for example, by a method such as suction or pushing.

The insulating layers 406 and 408 are disposed on the first surface 402a and the second surface 402b of the substrate 402, respectively, directly or via an intermediate layer (not shown). The insulating layers 406 and 408 are made of an insulating resin material such as polyimide, and may be any insulator having a gas release function. The insulating layers 406 and 408 act as gas release portions that release the gas generated and released inside the through hole 404 to the outside (permeate the gas). In this embodiment, insulating layers (gas release portions) 406 and 408 are disposed over and in contact with filler 405 exposed on the first and second surfaces of substrate 202 . At least one of the insulating layers (gas release portions) 406 and 408 may be arranged to contact the filler 405 exposed on the first surface 402 a and the second surface 402 b of the substrate 402 . If there is a gap between the side wall of the through-hole 404 and the filler 405 , the insulating layers (gas release portions) 406 and 408 are partly separated from the side wall of the through-hole 404 and/or the insulating layer 407 and the filler 405 . , that is, the insulating layers 406 and 408 may be interposed between the sidewalls of the through-hole 404 and the filling 405 . The insulating layers 406 and 408 are formed by performing desired patterning by photolithography using, for example, a photosensitive insulating material.

In the through electrode substrate 400 of the present invention according to this embodiment, as described above, the through hole 404 has the minimum opening 404c, the inflection point 404d and the maximum opening 404e. This through hole 404 is filled with a filler 405 . In the case shown in FIG. 4, the portion of the through-hole 404 on the side of the second surface 402b has a larger amount of the filler 405 than the portion of the through-hole 404 on the side of the first surface 402a. the amount of will also increase. Therefore, the area where the gas release portion 406 on the second surface 402b side contacts the filler 405 is larger than the area where the gas release portion 408 on the first surface 402a side contacts the filler 405. The amount of gas discharged from the gas discharge portion 408 on the side of the surface 402b may be increased. Furthermore, since the second opening 404b is larger than the first opening 404a, the contact area relationship described above can be easily obtained by making the diameters of the vias 410 and 412 substantially the same.

Vias 410 and 412, which are openings, are holes formed in the 207 insulating layer (gas release portion) 406 and 408 on the conductive film 409 on the first and second surfaces, respectively. Although not shown for convenience of explanation, wiring is formed in the vias 410 and 412 by plating or sputtering. These wirings are in contact with the conductive films 409 on the first surface 402a and the second surface 402b, and the wirings are electrically connected to each other. In addition, a portion of the vias 410 and/or 412, which are openings of the insulating layers (gas release portions) 406 and 408, are formed so as to overlap the first opening 404a and the second opening 404b of the substrate 402, respectively. can be

In the through electrode substrate 400 of the present invention according to this embodiment, as described above, the through hole 404 has the minimum opening 404c, the inflection point 404d and the maximum opening 404e. This through hole 404 is filled with a filler 405 . By providing a difference in size between the first opening 404a and the second opening 404b, it is possible to secure filling performance of the filler. When a force acts on the filler 405 toward the first surface 402a, the inflection point 404d prevents the filler 405 from falling off the substrate 400. FIG. In addition, when a force acts on the filler 405 in the direction of the second surface, the presence of the minimum opening 404c can prevent the filler 405 from dropping off from the substrate 400 . The through electrode substrate 400 according to this embodiment may have both or only one of the minimum opening 404c and the maximum opening 404d. Therefore, in the through electrode substrate 400 of the present invention according to the present embodiment, it is possible to ensure the fillability of the filler 405 and to prevent the filler 405 from coming off in any direction.

Moreover, in the through electrode substrate 400 of the present invention according to the present embodiment, at least one of the insulating layers (gas release portions) 406 and 408 is exposed on the first surface 402a and the second surface 402b of the substrate 402, as described above. It is arranged so as to contact the filling 405 which Therefore, the insulating layers (gas release portions) 406 and/or 408 can release the gas generated and released inside the through hole 404 to the outside, and problems caused by the gas accumulated in the gas pool inside the through hole 404 can be eliminated. It is possible to prevent the filler 405 from falling off from the through-hole 404 and provide a highly reliable through-electrode substrate.

Although it is preferable that there is no space between the conductive film 409 and the filler 205 arranged in the through-hole 404, there may be some space or gap between the conductive film 209 and the filler 405. There is also Even if such a space or gap is generated, it is possible to prevent the filling portion 405 from coming off in the through electrode substrate 400 of the present invention according to the present embodiment.

(Fifth embodiment)
FIG. 5A is a cross-sectional view of the through electrode substrate 100 of the present invention according to this embodiment. Also, FIG. 5B is an enlarged view of a portion 104f in FIG. 5A. In addition, both FIGS. 4A and 4B show part of the through electrode substrate 100 of the present invention according to the present embodiment for convenience of explanation.

The through electrode substrate 100 of the present invention according to the present embodiment is the through electrode substrate 100 of the present invention according to Embodiment 1, as shown in FIG. has a curved surface. A connecting portion 104g of the through-hole 104 and the second surface of the second opening 104b has a curved surface. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

In the through electrode substrate 100 of the present invention according to this embodiment, the connecting portions 104f and 104g of the through hole 104 each have curved surfaces, so that the filler 405 can be easily filled.

Also, in the other embodiments 2 to 4 described above, the connection portion of the first opening of the through hole with the first surface has a curved surface, and the connection with the first surface of the second opening of the through hole A configuration similar to that of the present embodiment can be adopted by making the portion have a curved surface.

(Sixth embodiment)
The configuration of the through electrode substrate 100 of the present invention according to the sixth embodiment will be described with reference to FIG. FIG. 6(A) is a plan view of the through electrode substrate 400 of the present invention according to the present embodiment viewed from above. FIG. 6(B) is a cross-sectional view taken along line AA' of FIG. 4(A). In addition, both FIGS. 6A and 6B show part of the through electrode substrate 100 of the present invention according to the present embodiment for convenience of explanation.

The through electrode substrate 100 of the present invention according to the present embodiment is the through electrode substrate 100 of the present invention according to the first embodiment, as shown in FIG. It is arranged closer to the first opening 104a than the center. Since other configurations are the same as those of the first embodiment, description thereof is omitted.

Also, in the other embodiments 2 to 5 described above, by arranging the inflection point of the through hole closer to the first opening than the center of the through hole, the same configuration as the present embodiment can be adopted. .

(Seventh embodiment)
The configuration of the through electrode substrate 100 of the present invention according to the seventh embodiment will be described with reference to FIG. FIG. 7(A) is a plan view of the through electrode substrate 100 of the present invention according to the present embodiment viewed from above. FIG. 7B is a cross-sectional view taken along line AA' of FIG. 7A. In addition, both FIGS. 7A and 7B show part of the through electrode substrate 100 of the present invention according to the present embodiment for convenience of explanation.

The through electrode substrate 100 of the present invention according to the present embodiment is the through electrode substrate 100 of the present invention according to Embodiment 1, as shown in FIG. 112 is provided so that the area in plan view (that is, viewed from above) increases as the distance from the substrate 102 side increases. In other words, in a cross-sectional view (that is, when viewed along the line A-A'), the angle α between the gas discharge portions 106 and 108 and the filling 105 is approximately 45 degrees to approximately 89 degrees. Since other configurations are the same as those of the first embodiment, description thereof is omitted. The insulating layers 106 and 108 are formed by performing desired patterning by photolithography using, for example, a photosensitive insulating material. By adjusting the exposure conditions, the openings ( The vias 110 and 112 can be formed so that their areas in plan view increase with distance from the substrate 102 side.

In the through electrode substrate 100 of the present invention according to the present embodiment, by having the configuration as described above, it is possible to prevent disconnection of the wiring arranged in the opening (via).

8A and 8B show schematic plan views of the through electrode substrate 100 of the present invention according to the present embodiment. In the present embodiment, the openings (vias) 110 and 112 of the gas discharge sections 106 and 108 are provided so that the area in plan view (that is, viewed from the top) increases as the distance from the substrate 102 side increases. , the areas of the openings (vias) 110 and 112 on the filling 105 can be reduced, and the contact between the openings (vias) 110 and 112 and the filling 105 can be secured, so the openings (vias) 110 and 112 are formed. It is possible to reduce the possibility of contact failure due to misalignment at the time of alignment.

For example, FIG. 8A shows a case where the opening (via) 110 above the filler 105 is shifted to the right. Also, FIG. 8B shows a case where the opening (via) 110 above the filling 105 is shifted to the right, and a part of the opening (via) 110 is out of the filling 105 . Even in the cases shown in FIGS. 8A and 8B, contact between the openings (vias) 110 and 112 and the filling 105 can be ensured, so there is a possibility of contact failure due to misalignment of the openings (vias) 110 and 112. can be made smaller.

Also, in the other embodiments 2 to 4 described above, as shown in FIGS. 9 to 11, a configuration similar to that of the present embodiment can be adopted. It is explained below.

The through electrode substrate 200 of the present invention according to the present embodiment is the through electrode substrate 200 of the present invention according to Embodiment 2, as shown in FIG. 212 is provided so that the area in a plan view (that is, viewed from the top) increases as the distance from the substrate 202 side increases. In other words, in a cross-sectional view (that is, when viewed along the line AA'), the angle α between the gas discharge portions 206 and 208 and the filler 205 is about 45 degrees to about 89 degrees. Since other configurations are the same as those of the second embodiment, description thereof is omitted.

The through electrode substrate 300 of the present invention according to the present embodiment is the through electrode substrate 300 of the present invention according to Embodiment 3, as shown in FIG. 312 is provided so that the area in a plan view (that is, viewed from the top) increases as the distance from the substrate 302 side increases. In other words, in a cross-sectional view (that is, when viewed along the line A-A'), the angle α between the gas discharge portions 306 and 308 and the filler 305 is approximately 45 degrees to approximately 89 degrees. Since other configurations are the same as those of the third embodiment, description thereof is omitted.

The through electrode substrate 400 of the present invention according to the present embodiment is the through electrode substrate 400 of the present invention according to Embodiment 4, as shown in FIG. 412 is provided so that the area in a plan view (that is, viewed from the top) increases as the distance from the substrate 402 side increases. In other words, in a cross-sectional view (that is, when viewed along the line A-A'), the angle α between the gas discharge portions 406 and 408 and the filler 405 is approximately 45 degrees to approximately 89 degrees. Since other configurations are the same as those of the fourth embodiment, description thereof is omitted.

As described above, in any structure of the present embodiment, the area of the opening (via) on the filling can be reduced, and the contact between the opening (via) and the filling can be secured. ), it is possible to reduce the possibility of contact failure due to misalignment.

(Eighth embodiment)
The configuration of the semiconductor device 1000 of the present invention according to the eighth embodiment will be described with reference to FIGS. 12 to 14. FIG. In this embodiment, a semiconductor device 1000 using the through electrode substrates in the first to seventh embodiments described above will be described.

FIG. 12 is a diagram showing a semiconductor device 1000 according to this embodiment. In a semiconductor device 1000 , three through electrode substrates 100 according to the present invention are stacked and connected to an LSI substrate (semiconductor substrate) 500 . A wiring layer 502 is provided on the LSI substrate 500 . A semiconductor element such as a DRAM, for example, is arranged on the through electrode substrate 100 . A wiring layer 120 is provided on the through electrode substrate 100 . As shown in FIG. 12, the wiring layer 502 of the LSI substrate 500 and the wiring layer 120 of the through electrode substrate 100 are connected via bumps 1002 . A metal such as indium, copper, or gold is used for the bump 1002, for example. Further, as shown in FIG. 12 , the wiring layer 120 of the through electrode substrate 100 and the wiring layer 120 of another through electrode substrate 100 are connected via bumps 1002 .

Note that when the through electrode substrates 100 are laminated, the number is not limited to three, and may be two or four or more. Moreover, the connection between the through electrode substrate 100 and another substrate is not limited to the bump, and other bonding techniques such as eutectic bonding may be used. Alternatively, the through electrode substrate 100 and another substrate may be bonded by applying and baking polyimide, epoxy resin, or the like.

FIG. 13 is a diagram showing another example of the semiconductor device 1000 of the present invention according to this embodiment. In a semiconductor device 1000 shown in FIG. 13, semiconductor chips (LSI chips) 600 and 602 such as MEMS devices, CPUs, memories, and ICs, and a through electrode substrate 100 are stacked and connected to an LSI substrate 500 .

A through electrode substrate 100 is arranged between a semiconductor chip 6000 and a semiconductor chip 602 , and both are connected by bumps 1002 . A semiconductor chip 600 is mounted on an LSI substrate 500 , and the LSI substrate 500 and semiconductor chip 602 are connected by wires 604 . In this example, the through electrode substrate 100 is used as an interposer for three-dimensionally mounting a plurality of stacked semiconductor chips. By stacking a plurality of semiconductor chips having different functions, a multifunctional semiconductor device is formed. be able to. For example, by using the semiconductor chip 600 as a 3-axis acceleration sensor and the semiconductor chip 602 as a 2-axis magnetic sensor, it is possible to realize a semiconductor device that realizes a 5-axis motion sensor in one module.

When the semiconductor chip is a sensor formed of a MEMS device, the sensing result may be output as an analog signal. In this case, low-pass filters, amplifiers, etc. may also be formed on the semiconductor chips 600 and 602 or the through electrode substrate 100 .

FIG. 14 is a diagram showing another example of the semiconductor device 1000 according to this embodiment. Although the two examples (FIGS. 12 and 13) described above are three-dimensional mounting, this example is an example in which the through electrode substrate 100 is applied to both two-dimensional and three-dimensional mounting. In the example shown in FIG. 14, six through electrode substrates 100 are laminated and connected to the LSI substrate 500 . However, not only are all the through electrode substrates 100 stacked and arranged, but they are also arranged side by side in the substrate in-plane direction.

In the example of FIG. 14 , two through electrode substrates 100 are connected on an LSI substrate 500 , a further through electrode substrate 100 is connected on these through electrode substrates 100 , and a through electrode substrate 100 is further connected on the through electrode substrate 10 . It is connected. As in the example shown in FIG. 13, even if the through electrode substrate 100 is used as an interposer for connecting a plurality of semiconductor chips, both two-dimensional and three-dimensional mounting is possible. For example, some through electrode substrates 100 may be replaced with semiconductor chips.

Further, in the examples of FIGS. 12 to 14, an example of using the through electrode substrate 100 of the present invention according to the first embodiment as the through electrode substrate is shown, but it is not limited to this, and other embodiments are possible. The through electrode substrates 200, 300 and/or 400 according to the present invention may be used.

The semiconductor device 1000 of the present invention according to the present embodiment can be used in various applications such as mobile terminals (mobile phones, smart phones, laptop personal computers, etc.), information processing devices (desktop personal computers, servers, car navigation systems, etc.), home appliances, and the like. installed in electrical equipment.

100, 200, 300, 400 through electrode substrates 102, 202, 302, 402 substrates 104, 204, 304, 404 through holes 105, 205, 305, 405 fillers 106, 108, 206, 208, 306, 308, 406, 408 insulating layers 207, 409 conductive films 307, 407 insulating layers 110, 112, 210, 212, 310, 312, 410, 412 vias (openings)

Claims (4)

a substrate having a through hole passing through the first opening on the first surface and the second opening on the second surface;
a filler provided inside the through-hole;
an insulating resin layer that overlaps with the through hole in plan view and is in contact with the filler exposed on at least one of the first surface and the second surface;
with
the second opening is larger than the first opening, and a minimum opening having the smallest area in plan view exists between the first opening and the second opening;
The insulating resin layer is a through electrode substrate having a function of allowing gas to pass therethrough. The through electrode substrate according to claim 1 , wherein the insulating resin layer has vias overlapping with the through holes in plan view. The through electrode substrate according to claim 1 or 2 , wherein the insulating resin layer has a via that does not overlap with the through hole in plan view. 4. The through electrode substrate according to claim 2 , wherein said via has a tapered shape.

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