JP7284699B2 - Conductive material, connection structure, and method for manufacturing connection structure - Google Patents

Description

The present invention relates to conductive materials containing solder particles. The present invention also relates to a connection structure using the conductive material and a method for manufacturing the connection structure.

Anisotropic conductive materials such as anisotropic conductive pastes and anisotropic conductive films are widely known. In the anisotropic conductive material, conductive particles are dispersed in a binder resin.

The anisotropic conductive material is used to obtain various connection structures. Examples of the connection using the anisotropic conductive material include connection between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), connection between a semiconductor chip and a flexible printed circuit board (COF (Chip on Film)), semiconductor Examples include connection between a chip and a glass substrate (COG (Chip on Glass)) and connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)).

For example, when electrically connecting electrodes of a flexible printed circuit board and electrodes of a glass epoxy board using the anisotropic conductive material, an anisotropic conductive material containing conductive particles is placed on the glass epoxy board. do. Next, the flexible printed circuit board is laminated and heated and pressurized. As a result, the anisotropic conductive material is cured and the electrodes are electrically connected via the conductive particles to obtain a connection structure.

As a method for disposing the conductive material on the substrate, a method by screen printing, a method by dispensing, a method by pin transfer, a method by dip transfer, and the like are known. The following Patent Documents 1 and 2 disclose conductive materials used for pin transfer.

Patent Document 1 below discloses an Au—Sn alloy solder paste for pin transfer containing Au—Sn alloy solder powder having a specific composition. The Au—Sn alloy solder powder has a particle size distribution with an average particle size of less than 5 μm and a maximum particle size of 10 μm or less. Preferably, the Au—Sn alloy solder paste for pin transfer has a viscosity of 10 Pa·s or more and less than 50 Pa·s.

Patent Document 2 below discloses a conductive adhesive in which metal powder is dispersed in a resin. The conductive adhesive is composed of a resin obtained by adding 20% by weight or more and 50% by weight or less of a bisphenol A type epoxy resin to a phenolic novolac type epoxy resin that is liquid at room temperature, and an average particle size of 0.5 μm to 5 μm. A metal powder and a metal powder having an average particle size of 10 μm to 25 μm. The viscosity of the conductive adhesive at 25° C. is 10 Pa s or more and 30 Pa s or less when the shear rate is 20 s ⁻¹ , and 20 Pa s or more and 60 Pa s or less when the shear rate is 4 s ⁻¹ . is.

JP 2009-226472 A JP-A-11-279501

A screen printing method is widely used as a method for disposing the conductive material on the substrate. However, with the recent complication of the mounting process and the complication of the substrate design, it may not be possible to arrange the conductive material with high accuracy by screen printing.

Although the dispensing method can improve the placement accuracy of the conductive material more than the screen printing method, it is difficult to sufficiently improve the placement accuracy because the conductive material is discharged in a circular shape.

A pin transfer method and a dip transfer method are known as alternatives to the screen printing and dispensing methods.

Pin transfer is a method of attaching a conductive material to a pin having a specific shape and transferring the conductive material attached to the pin to a specific portion of a substrate. However, it is difficult to sufficiently suppress variations in the transfer area with conventional pin transfer conductive materials such as those described in Patent Documents 1 and 2.

Dip transfer is a method of transferring a conductive material to a specific portion of a substrate by immersing (dipping) the specific portion of the substrate in the conductive material. However, with the conventional conductive material for dip transfer, it is difficult to sufficiently suppress variations in transfer area because the conductive material wets and spreads.

An object of the present invention is to provide a conductive material capable of suppressing variations in transfer area. Another object of the present invention is to provide a connection structure using the conductive material and a method for manufacturing the connection structure.

According to a broad aspect of the present invention, a conductive material for use in pin transfer or dip transfer, comprising a thermosetting component, a plurality of solder particles, and a flux, wherein the solder particle content is 70% by weight. above 93% by weight or less, the frozen-stored conductive material is thawed, the viscosity of the conductive material at 25°C and 5 rpm immediately after reaching 25°C is defined as ηA, and the frozen-stored conductive material is thawed. , where ηB is the viscosity of the conductive material at 25°C and 0.5 rpm immediately after reaching 25°C, ηA is 10 Pa s or more and 80 Pa s or less, and ηB/ηA is 1.5 or more. A conductive material is provided, which is

In a specific aspect of the conductive material according to the present invention, ηA is 50 Pa·s or less.

In a specific aspect of the conductive material according to the present invention, the average particle size of the solder particles is 3.0 μm or less, and the maximum particle size of the solder particles is 10 μm or less.

In a specific aspect of the conductive material according to the present invention, the solder particles have a melting point of 120° C. or higher and 400° C. or lower.

In a specific aspect of the conductive material according to the present invention, the flux contains organic acid, phosphoric acid, organic acid amine salt, or phosphoric acid amine salt.

In a specific aspect of the conductive material according to the present invention, the conductive material is conductive paste.

According to a broad aspect of the present invention, a first member to be connected having a first electrode on its surface, a second member to be connected having a second electrode on its surface, the first member to be connected, a connecting portion connecting the second member to be connected, wherein the material of the connecting portion is the conductive material described above, and the first electrode and the second electrode are connected to the connecting portion A connecting structure is provided that is electrically connected by a solder portion therein.

According to a broad aspect of the present invention, the conductive material described above is used on the surface of the first connection target member having the first electrode on the surface or on the second connection target member having the second electrode on the surface. transferring the conductive material onto the surface by pin transfer or dip transfer; and transferring the first member to be connected so that the first electrode and the second electrode face each other through the conductive material the first member to be connected and the second member to be connected by arranging the second member to be connected and heating the conductive material to the melting point of the solder particles or higher, forming a connecting portion from the conductive material, and electrically connecting the first electrode and the second electrode by a solder portion in the connecting portion. A method of manufacturing a structure is provided.

The conductive material according to the invention is used for pin transfer or dip transfer. A conductive material according to the present invention includes a thermosetting component, a plurality of solder particles, and flux, and the content of the solder particles is 70% by weight or more and 93% by weight or less. In the present invention, the frozen-stored conductive material is thawed, and the viscosity of the conductive material at 25°C and 5 rpm immediately after reaching 25°C is defined as ηA. Let ηB be the viscosity of the conductive material at 25° C. and 0.5 rpm immediately after reaching the temperature. In the conductive material according to the present invention, ηA is 10 Pa·s or more and 80 Pa·s or less, and ηB/ηA is 1.5 or more. Since the conductive material according to the present invention has the above configuration, it is possible to suppress variations in the transfer area.

FIG. 1 is a cross-sectional view schematically showing a connected structure obtained using a conductive material according to one embodiment of the present invention.

The details of the present invention are described below.

(Conductive material)
The conductive material according to the invention is used for pin transfer or dip transfer. The conductive material according to the present invention may be used for pin transfer or dip transfer. A conductive material according to the present invention includes a thermosetting component, a plurality of solder particles, and flux, and the content of the solder particles is 70% by weight or more and 93% by weight or less. In the present invention, the frozen-stored conductive material is thawed, and the viscosity of the conductive material at 25°C and 5 rpm immediately after reaching 25°C is defined as ηA. Let ηB be the viscosity of the conductive material at 25° C. and 0.5 rpm immediately after reaching the temperature. In the conductive material according to the present invention, ηA is 10 Pa·s or more and 80 Pa·s or less, and ηB/ηA is 1.5 or more.

Since the conductive material according to the present invention has the above configuration, it is possible to suppress variations in the transfer area.

In recent years, mounting processes such as two-story mounting have become more complex. In addition, substrate designs such as substrates having unevenness on the surface and substrates with fine pitches are becoming more complicated. It is difficult for the conventional screen printing method and dispensing method to cope with the complicated mounting process and board design as described above. In addition, even with the conventional methods of pin transfer and dip transfer using conductive materials, the transfer area varies, so it is difficult to cope with the complicated mounting process and board design as described above. In particular, when the average particle size and the maximum particle size of the solder particles contained in the conductive material are small, it is difficult to sufficiently suppress variations in the transfer area.

On the other hand, the conductive material according to the present invention can suppress variations in the transfer area, so that it is possible to cope with complicated mounting processes and board designs. Moreover, in the conductive material according to the present invention, even when the average particle size and the maximum particle size of the solder particles are small, variations in the transfer area can be suppressed.

Moreover, in the present invention, solder cohesiveness can be enhanced. Therefore, in the present invention, a plurality of solder particles are likely to gather between the upper and lower facing electrodes during conductive connection between the electrodes, and a plurality of solder particles can be arranged on the electrodes (lines). Also, some of the plurality of solder particles are less likely to be placed between lateral electrodes that should not be connected, and the amount of solder particles placed between lateral electrodes that should not be connected can be significantly reduced. can. As a result, the present invention can reduce the residual amount of solder between lateral electrodes that should not be connected.

Furthermore, according to the present invention, positional displacement between electrodes can be prevented. In the present invention, when the second connection target member is superimposed on the first connection target member having the conductive material disposed on the upper surface, the electrode of the first connection target member and the electrode of the second connection target member Even if the alignment is misaligned, the electrodes can be connected by correcting the misalignment (self-alignment effect).

In the present invention, ηA is the viscosity of the conductive material at 25° C. and 5 rpm immediately after the conductive material that has been frozen and stored is thawed and reaches 25° C. In the present invention, ηB is the viscosity of the conductive material at 25° C. and 0.5 rpm immediately after the conductive material that has been frozen and stored is thawed and reaches 25° C. In the present invention, ηC is the viscosity of the conductive material immediately after production at 25° C. and 5 rpm. In the present invention, ηD is the viscosity at 25° C. and 0.5 rpm of the conductive material immediately after fabrication.

From the viewpoint of exhibiting the effects of the present invention, ηA is 10 Pa·s or more and 80 Pa·s or less.

ηA is preferably 20 Pa·s or more, more preferably 30 Pa·s or more, preferably 60 Pa·s or less, and more preferably 40 Pa·s or less. When ηA is equal to or more than the lower limit and equal to or less than the upper limit, the effect of the present invention can be exhibited more effectively. The effects of the present invention can be exhibited more effectively. Furthermore, the reliability of conduction between the upper and lower electrodes to be connected can be more effectively improved. The above ηA can be appropriately adjusted depending on the type and amount of compounding components.

From the viewpoint of exhibiting the effect of the present invention, ηB/ηA (ratio of ηB to ηA) is 1.5 or more.

The ηB/ηA (ratio of ηB to ηA) is preferably 1.8 or more, more preferably 2.5 or more, and preferably 6.0 or less, more preferably 4.5 or less. When the ηB/ηA is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively, and even when the average particle size and the maximum particle size of the solder particles are small, Also, the effects of the present invention can be exhibited more effectively. Furthermore, the reliability of conduction between the upper and lower electrodes to be connected can be more effectively improved. The above ηB/ηA can be appropriately adjusted depending on the types and blending amounts of the ingredients.

ηB is preferably 36 Pa·s or more, more preferably 50 Pa·s or more, preferably 360 Pa·s or less, and more preferably 180 Pa·s or less. When ηB is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively. The effects of the present invention can be exhibited more effectively. Furthermore, the reliability of conduction between the upper and lower electrodes to be connected can be more effectively improved. The above ηB can be appropriately adjusted depending on the type and amount of compounding components.

ηC is preferably 25 Pa·s or more, more preferably 35 Pa·s or more, preferably 65 Pa·s or less, and more preferably 45 Pa·s or less. When ηC is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively. The effects of the present invention can be exhibited more effectively. Furthermore, the reliability of conduction between the upper and lower electrodes to be connected can be more effectively improved. The above ηC can be appropriately adjusted depending on the type and amount of compounding components.

ηD is preferably 41 Pa·s or more, more preferably 55 Pa·s or more, preferably 370 Pa·s or less, and more preferably 190 Pa·s or less. When ηD is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively. The effects of the present invention can be exhibited more effectively. Furthermore, the reliability of conduction between the upper and lower electrodes to be connected can be more effectively enhanced. The above ηD can be appropriately adjusted depending on the type and amount of compounding components.

The ηD/ηC (ratio of ηD to ηC) is preferably 1.5 or more, more preferably 1.8 or more, still more preferably 2.5 or more, and preferably 6.0 or less, more preferably 4.0. 5 or less. When ηD/ηC is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively, and even when the average particle size and the maximum particle size of the solder particles are small, Also, the effects of the present invention can be exhibited more effectively. Furthermore, the reliability of conduction between the upper and lower electrodes to be connected can be more effectively improved. The above ηD/ηC can be appropriately adjusted depending on the type and blending amount of the ingredients.

The viscosity (ηA), the viscosity (ηB), the viscosity (ηC), and the viscosity (ηD) can be measured using, for example, an E-type viscometer ("TVE22L" manufactured by Toki Sangyo Co., Ltd.). can.

In this specification, the conditions for refrigerated storage of the conductive material for measuring the viscosity are the conditions for storage at -40°C for 48 hours. On the other hand, there is no particular limitation on the above-mentioned frozen storage conditions when the conductive material is actually used. The temperature of the above frozen storage at the time of actual use of the conductive material is not particularly limited, and may be less than 0°C. The temperature of the above frozen storage during actual use of the conductive material may be −10° C. or lower, −20° C. or lower, or −40° C. or lower. The period of the above frozen storage when the conductive material is actually used is not particularly limited, and may be 180 days or less. The period of frozen storage may be 30 days or longer, 60 days or longer, 90 days or longer, or 120 days or longer.

Moreover, in this specification, the thawing condition of the conductive material for measuring the viscosity is the condition of storage at 25°C. On the other hand, there is no particular limitation on the method of thawing the above-mentioned electrically conductive material that has been stored frozen when the electrically conductive material is actually used. Examples of the method for thawing the above-mentioned conductive material that has been frozen and stored at the time of actual use of the conductive material include a method of thawing under room temperature conditions, a method of thawing under refrigeration conditions, and a method of thawing under heating conditions. . The room temperature condition is preferably 20° C. or higher and 25° C. or lower. The refrigeration conditions are preferably above 0°C and 10°C or less. The heating conditions are preferably 30° C. or higher and 35° C. or lower.

The viscosity (ηmp) of the conductive material at the melting point of the solder particles is preferably 0.1 Pa s or more, more preferably 1 Pa s or more, preferably 10 Pa s or less, more preferably 5 Pa s or less, and further It is preferably 2 Pa·s or less. When the viscosity (ηmp) is equal to or higher than the lower limit, it is possible to suppress the formation of voids in the connecting portion and suppress the protrusion of the conductive material to areas other than the connecting portion. When the viscosity (ηmp) is equal to or less than the upper limit, the solder particles can be efficiently agglomerated on the electrode.

The above viscosity (ηmp) is measured, for example, using a rheometer "HAAKE MARS III" manufactured by Thermo Fisher Scientific, at a frequency of 2 Hz, a heating rate of 0.11°C/sec, and a measurement temperature range of 25°C to 200°C (however, solder If the melting point of the particles exceeds 200° C., the melting point of the solder particles is used as the upper limit of the temperature). From the measurement results, the viscosity at the melting point (° C.) of the solder particles is evaluated.

The conductive material can be used as a conductive paste or the like. From the viewpoint of exhibiting the effects of the present invention more effectively, the conductive material is preferably liquid at 25° C., and is preferably a conductive paste. The conductive paste is preferably an anisotropic conductive paste. From the viewpoint of arranging the solder particles on the electrodes more efficiently, the conductive material is preferably a conductive paste. The conductive material is suitably used for electrical connection of electrodes. The conductive material is preferably a circuit connecting material.

Each component contained in the conductive material will be described below. In this specification, "(meth)acryl" means one or both of "acryl" and "methacryl".

(Thermosetting component)
The conductive material includes a thermosetting component. Examples of the thermosetting component include thermosetting compounds, thermosetting agents, and curing accelerators. The conductive material may contain a thermosetting compound as a thermosetting component, may contain a thermosetting compound and a curing accelerator, and may contain a thermosetting compound, a thermosetting agent and a curing accelerator. and may include

(Thermosetting component: thermosetting compound)
The thermosetting compound is a compound that can be cured by heating.

The thermosetting compound is not particularly limited. Examples of the thermosetting compounds include oxetane compounds, epoxy compounds, episulfide compounds, (meth)acrylic compounds, phenol compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds and polyimide compounds. From the viewpoint of further improving the curability and viscosity of the conductive material, and from the viewpoint of more effectively increasing the conduction reliability, the thermosetting compound preferably contains an epoxy compound or an episulfide compound, and contains an epoxy compound. is more preferable. As for the said thermosetting compound, only 1 type may be used and 2 or more types may be used together.

The epoxy compound is a compound having at least one epoxy group. Examples of the epoxy compounds include bisphenol A type epoxy compounds, bisphenol F type epoxy compounds, bisphenol S type epoxy compounds, phenol novolac type epoxy compounds, biphenyl type epoxy compounds, biphenyl novolak type epoxy compounds, biphenol type epoxy compounds, and naphthalene type epoxy compounds. , fluorene type epoxy compound, phenol aralkyl type epoxy compound, naphthol aralkyl type epoxy compound, dicyclopentadiene type epoxy compound, anthracene type epoxy compound, epoxy compound having adamantane skeleton, epoxy compound having tricyclodecane skeleton, naphthylene ether type Epoxy compounds, epoxy compounds having a triazine core in the skeleton, and the like are included. Only one type of the epoxy compound may be used, or two or more types may be used in combination.

The epoxy compound is liquid or solid at normal temperature (25° C.), and when the epoxy compound is solid at normal temperature, the melting temperature of the epoxy compound is preferably equal to or lower than the melting point of the solder particles. By using the above preferred epoxy compound, the viscosity increases at the stage when the members to be connected are bonded together. It is possible to suppress positional deviation from the connection target member. Furthermore, the heat during curing can greatly reduce the viscosity of the conductive material, allowing the agglomeration of the solder particles to proceed efficiently.

From the viewpoint of arranging the solder particles on the electrode more efficiently, the thermosetting compound preferably contains a thermosetting compound having a polyether skeleton.

As the thermosetting compound having a polyether skeleton, a compound having a glycidyl ether group at both ends of an alkyl chain having 3 to 12 carbon atoms, and a polyether skeleton having 2 to 4 carbon atoms, the polyether skeleton Examples thereof include polyether type epoxy compounds having a structural unit in which 2 to 10 are continuously bonded.

From the viewpoint of more effectively increasing the heat resistance of the cured product, the thermosetting compound preferably contains a thermosetting compound having an isocyanuric skeleton.

Examples of the thermosetting compound having an isocyanurate skeleton include triisocyanurate type epoxy compounds, and the TEPIC series manufactured by Nissan Chemical Industries, Ltd. (TEPIC-G, TEPIC-S, TEPIC-SS, TEPIC-HP, TEPIC-L, TEPIC-PAS, TEPIC-VL, TEPIC-UC) and the like.

The content of the thermosetting compound in 100% by weight of the conductive material is preferably 4% by weight or more, more preferably 6% by weight or more, still more preferably 8% by weight or more, and more preferably 25% by weight or less. is 15% by weight or less, more preferably 10% by weight or less. When the content of the thermosetting compound is at least the above lower limit and below the above upper limit, the effects of the present invention can be exhibited more effectively, and the insulation reliability between electrodes that should not be connected and It is possible to more effectively improve the reliability of conduction between the electrodes to be connected. Moreover, impact resistance can be improved as content of the said thermosetting compound is more than the said minimum.

The content of the epoxy compound in 100% by weight of the conductive material is preferably 4% by weight or more, more preferably 6% by weight or more, still more preferably 8% by weight or more, preferably 25% by weight or less, and more preferably 15% by weight. % by weight or less, more preferably 10% by weight or less. When the content of the epoxy compound is not less than the above lower limit and not more than the above upper limit, the effect of the present invention can be exhibited more effectively, and the insulation reliability and connection between electrodes that should not be connected can be improved. It is possible to further effectively improve the reliability of conduction between the electrodes. Moreover, impact resistance can be improved as content of the said epoxy compound is more than the said minimum.

(Thermosetting component: thermosetting agent)
The conductive material may or may not contain a thermosetting agent. The conductive material preferably contains a thermosetting agent together with the thermosetting compound. The thermosetting agent thermosets the thermosetting compound.

The thermosetting agent is not particularly limited. Examples of the heat curing agent include imidazole curing agents, thiol curing agents, amine curing agents, phenol curing agents, acid anhydride curing agents, thermal cationic initiators and thermal radical generators. Only one kind of the thermosetting agent may be used, or two or more kinds thereof may be used in combination.

From the viewpoint of enabling the conductive material to be cured at a low temperature more rapidly, the thermosetting agent is preferably an imidazole curing agent, a thiol curing agent, or an amine curing agent. Moreover, from the viewpoint of enhancing storage stability when the thermosetting compound and the thermosetting agent are mixed, the thermosetting agent is preferably a latent curing agent. The latent curing agent is preferably a latent imidazole curing agent, a latent thiol curing agent or a latent amine curing agent. The thermosetting agent may be coated with a polymeric material such as polyurethane resin or polyester resin.

The imidazole curing agent is not particularly limited. Examples of the imidazole curing agent include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6. -[2′-methylimidazolyl-(1′)]-ethyl-s-triazine and 2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine isocyanuric acid adducts , 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4-benzyl-5-hydroxymethylimidazole, 2-p-toluyl-4-methyl-5 -5-position of 1H-imidazole in hydroxymethylimidazole, 2-methatoluyl-4-methyl-5-hydroxymethylimidazole, 2-methatoluyl-4,5-dihydroxymethylimidazole, 2-paratoluyl-4,5-dihydroxymethylimidazole, etc. and the hydrogen at the 2-position is substituted with a hydroxymethyl group and the hydrogen at the 2-position with a phenyl group or a toluyl group.

The thiol curing agent is not particularly limited. Examples of the thiol curing agent include trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis-3-mercaptopropionate and dipentaerythritol hexa-3-mercaptopropionate.

The amine curing agent is not particularly limited. Examples of the amine curing agent include hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraspiro[5.5]undecane, bis(4 -aminocyclohexyl)methane, metaphenylenediamine and diaminodiphenylsulfone.

The acid anhydride curing agent is not particularly limited, and a wide range of acid anhydrides can be used as long as they are used as curing agents for thermosetting compounds such as epoxy compounds. Examples of the acid anhydride curing agent include phthalic anhydride, tetrahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, and methylbutenyltetrahydrophthalic anhydride. , anhydrides of phthalic acid derivatives, maleic anhydride, nadic anhydride, methyl nadic anhydride, glutaric anhydride, succinic anhydride, glycerin bis trimellitic anhydride monoacetate, and ethylene glycol bis trimellitic anhydride. acid anhydride curing agent, trifunctional acid anhydride curing agent such as trimellitic anhydride, and pyromellitic anhydride, benzophenone tetracarboxylic anhydride, methylcyclohexene tetracarboxylic anhydride, polyazelaic anhydride, etc. and a tetrafunctional or higher acid anhydride curing agent.

The thermal cationic initiator is not particularly limited. Examples of the thermal cationic initiator include iodonium-based cationic curing agents, oxonium-based cationic curing agents, and sulfonium-based cationic curing agents. Examples of the iodonium cationic curing agent include bis(4-tert-butylphenyl)iodonium hexafluorophosphate. Examples of the oxonium cationic curing agent include trimethyloxonium tetrafluoroborate. Examples of the sulfonium cationic curing agent include tri-p-tolylsulfonium hexafluorophosphate.

The thermal radical generator is not particularly limited. Examples of the thermal radical generator include azo compounds and organic peroxides. Examples of the azo compound include azobisisobutyronitrile (AIBN). Examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.

The reaction initiation temperature of the thermosetting agent is preferably 50°C or higher, more preferably 70°C or higher, still more preferably 80°C or higher, preferably 250°C or lower, more preferably 200°C or lower, and still more preferably 150°C. Below, it is 140 degrees C or less especially preferably. When the reaction initiation temperature of the thermosetting agent is equal to or higher than the lower limit and equal to or lower than the upper limit, the solder particles are arranged on the electrode more efficiently. From the viewpoint of more efficiently arranging the solder particles on the electrodes and from the viewpoint of more effectively increasing the reliability of conduction between the upper and lower electrodes to be connected, the reaction initiation temperature of the thermosetting agent is 80°C. It is particularly preferable that the temperature is above 140°C.

From the viewpoint of more effectively arranging the solder particles on the electrodes, the reaction initiation temperature of the thermosetting agent is preferably higher than the melting point of the solder particles, more preferably 5° C. or higher. ° C. or more is more preferable.

The reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak starts to rise in DSC.

The content of the thermosetting agent is not particularly limited. With respect to 100 parts by weight of the thermosetting compound, the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, and preferably 200 parts by weight or less, more preferably It is 100 parts by weight or less, more preferably 75 parts by weight or less. When the content of the thermosetting agent is at least the lower limit, it is easy to sufficiently cure the conductive material. If the content of the thermosetting agent is equal to or less than the above upper limit, it becomes difficult for excess thermosetting agent that has not been involved in curing to remain after curing, and the heat resistance of the cured product is further enhanced.

(Thermosetting component: curing accelerator)
The conductive material may contain a curing accelerator. The curing accelerator is not particularly limited. The curing accelerator preferably acts as a curing catalyst in the reaction between the thermosetting compound and the thermosetting agent. The curing accelerator preferably acts as a curing catalyst in the reaction with the thermosetting compound. Only one kind of the curing accelerator may be used, or two or more kinds thereof may be used in combination.

Examples of the curing accelerator include phosphonium salts, tertiary amines, tertiary amine salts, quaternary onium salts, tertiary phosphines, crown ether complexes, amine complex compounds and phosphonium ylides. Specifically, the curing accelerator includes imidazole compounds, isocyanurates of imidazole compounds, dicyandiamide, dicyandiamide derivatives, melamine compounds, melamine compound derivatives, diaminomaleonitrile, diethylenetriamine, triethylenetetramine, and tetraethylenepentamine. , bis(hexamethylene)triamine, triethanolamine, diaminodiphenylmethane, amine compounds such as organic acid dihydrazide, 1,8-diazabicyclo[5,4,0]undecene-7,3,9-bis(3-aminopropyl) -2,4,8,10-tetraoxaspiro[5,5]undecane, boron trifluoride, boron trifluoride-amine complex compounds, triphenylphosphine, tricyclohexylphosphine, tributylphosphine and methyldiphenylphosphine, etc. organic phosphorus compounds and the like.

The phosphonium salt is not particularly limited. Examples of the phosphonium salts include tetra-butylphosphonium bromide, tetra-butylphosphonium O—O diethyldithiophosphate, methyltributylphosphonium dimethylphosphate, tetra-butylphosphonium benzotriazole, tetra-butylphosphonium tetrafluoroborate, and tetra-butyl phosphonium tetraphenylborate and the like.

The content of the curing accelerator is appropriately selected so that the thermosetting compound cures satisfactorily. With respect to 100 parts by weight of the thermosetting compound, the content of the curing accelerator is preferably 0.5 parts by weight or more, more preferably 0.8 parts by weight or more, preferably 10 parts by weight or less, and more Preferably, it is 8 parts by weight or less. When the content of the curing accelerator is equal to or more than the lower limit and equal to or less than the upper limit, the thermosetting compound can be cured satisfactorily.

(solder particles)
The conductive material according to the present invention includes solder particles. Both the central portion and the outer surface of the solder particles are formed of solder. The solder particles are particles in which both the central portion and the outer surface are solder. Instead of the solder particles, when using conductive particles comprising base particles made of a material other than solder and solder portions disposed on the surfaces of the base particles, conductive particles are formed on the electrodes. It becomes difficult for particles to gather. In addition, since the conductive particles have low solderability between the conductive particles, the conductive particles that have moved onto the electrodes tend to move out of the electrodes. tends to be low.

The solder is preferably a metal having a melting point of 450° C. or less (low melting point metal). The solder particles are preferably metal particles having a melting point of 450° C. or less (low-melting-point metal particles). The low-melting-point metal particles are particles containing a low-melting-point metal. The low-melting-point metal means a metal having a melting point of 450° C. or lower. The melting point of the low melting point metal is preferably 400° C. or lower, more preferably 300° C. or lower. The solder particles are preferably low-melting solder having a melting point of less than 300°C.

The melting point of the solder particles is preferably 80.degree. C. or higher, more preferably 120.degree. When the melting point of the solder particles is equal to or higher than the lower limit and equal to or lower than the upper limit, the solder particles can be arranged on the electrode more efficiently, and the insulation reliability and conduction reliability can be improved more effectively. can.

The melting point of the solder particles can be determined by differential scanning calorimetry (DSC). Examples of the differential scanning calorimeter (DSC) device include "EXSTAR DSC7020" manufactured by SII.

Also, the solder particles preferably contain tin. The content of tin in 100% by weight of the metal contained in the solder particles is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more. . When the content of tin in the solder particles is equal to or higher than the lower limit, the connection reliability between the solder portion and the electrode is further enhanced.

The tin content is measured using a high-frequency inductively coupled plasma atomic emission spectrometer ("ICP-AES" manufactured by Horiba Ltd.) or a fluorescent X-ray spectrometer ("EDX-800HS" manufactured by Shimadzu Corporation). can do.

By using the solder particles, the solder is melted and joined to the electrodes, and the solder portions conduct between the electrodes. For example, since the solder part and the electrode are likely to be in surface contact rather than point contact, the connection resistance is reduced. In addition, the use of the solder particles increases the bonding strength between the solder portion and the electrode, making it more difficult for the solder portion and the electrode to separate, thereby further increasing the conduction reliability and connection reliability.

The metal forming the solder particles is not particularly limited. The metal is preferably tin or an alloy containing tin. The alloys include tin-silver alloys, tin-copper alloys, tin-silver-copper alloys, tin-bismuth alloys, tin-zinc alloys, tin-indium alloys and the like. The low-melting-point metal is preferably tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, or a tin-indium alloy because of their excellent wettability with the electrode. Tin-bismuth alloys and tin-indium alloys are more preferred.

The solder particles are preferably a filler material having a liquidus line of 450° C. or less based on JIS Z3001: Welding Terminology. Examples of the composition of the solder particles include metal compositions containing zinc, gold, silver, lead, copper, tin, bismuth, indium, and the like. A tin-indium system (117° C. eutectic) or a tin-bismuth system (139° C. eutectic), which have a low melting point and are lead-free, are preferred. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium, or tin and bismuth.

In order to further increase the bonding strength between the solder part and the electrode, the solder particles contain nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, chromium, It may contain metals such as molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder portion and the electrode, the solder particles preferably contain nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further increasing the bonding strength between the solder part and the electrode, the content of these metals for increasing the bonding strength is preferably 0.0001% by weight or more in 100% by weight of the metal contained in the solder particles. It is preferably 1% by weight or less.

The average particle size of the solder particles is preferably 0.1 µm or more, more preferably 2.0 µm or more, and preferably 5.0 µm or less, more preferably 4.0 µm or less, and still more preferably 3.0 µm or less. . When the average particle size of the solder particles is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively. With conventional conductive materials containing solder particles with a relatively small average particle size, it is difficult to sufficiently suppress variations in the transfer area, but in the present invention, even if the average particle size of the solder particles is relatively small Also, the variation in transfer area can be effectively suppressed. Further, when the average particle size of the solder particles is equal to or more than the lower limit and equal to or less than the upper limit, the solder particles can be arranged on the electrode more efficiently, and the conduction reliability and connection reliability are more effectively improved. can be increased to The average particle size of the solder particles may be 2 μm or less, 1 μm or less, or less than 1 μm. In the present invention, even if the average particle size of the solder particles is considerably small, the effects of the present invention are effectively exhibited.

The maximum particle size of the solder particles is preferably 0.1 μm or more, more preferably 1 μm or more, and preferably 10 μm or less, more preferably 5.0 μm or less. When the maximum particle size of the solder particles is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively. With conventional conductive materials containing solder particles with a relatively small maximum particle size, it is difficult to sufficiently suppress variations in the transfer area, but in the present invention, even if the maximum particle size of the solder particles is relatively small Also, the variation in transfer area can be effectively suppressed. Further, when the maximum particle diameter of the solder particles is equal to or more than the lower limit and equal to or less than the upper limit, the solder particles can be arranged on the electrode more efficiently, and the conduction reliability and connection reliability are more effectively improved. can be increased to

The average particle size of the solder particles is preferably the number average particle size. The average particle size of the solder particles can be obtained, for example, by observing 50 arbitrary solder particles with an electron microscope or an optical microscope and calculating the average particle size of each solder particle, or by laser diffraction particle size distribution measurement. It is required by doing.

For the maximum particle size of the solder particles, for example, 50 arbitrary solder particles are observed with an electron microscope or an optical microscope, and the maximum particle size of the solder particles is calculated, or laser diffraction particle size distribution measurement is performed. It is required by

The coefficient of variation (CV value) of the particle diameter of the solder particles is preferably 5% or more, more preferably 10% or more, and preferably 40% or less, more preferably 30% or less. When the coefficient of variation of the particle size of the solder particles is equal to or more than the lower limit and equal to or less than the upper limit, the solder particles can be arranged on the electrode more efficiently. However, the CV value of the particle diameter of the solder particles may be less than 5%.

The coefficient of variation (CV value) can be measured as follows.

CV value (%) = (ρ/Dn) × 100
ρ: standard deviation of particle size of solder particles Dn: average value of particle size of solder particles

The shape of the solder particles is not particularly limited. The shape of the solder particles may be spherical, may be other than spherical, or may be flat.

From the viewpoint of use for pin transfer or dip transfer and the viewpoint of exhibiting the effects of the present invention, the content of the solder particles is 70% by weight or more and 93% by weight or less in 100% by weight of the conductive material.

The content of the solder particles in 100% by weight of the conductive material is preferably 80% by weight or more, more preferably 85% by weight or more, preferably 91% by weight or less, and more preferably 89% by weight or less. When the content of the solder particles is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively.

The weight ratio of the content of the solder particles to the content of the flux (the content of the solder particles/the content of the flux) is preferably 5 or more, more preferably 6 or more, and more preferably 10 or less. is 9 or less. When the weight ratio (the content of the solder particles/the content of the flux) is equal to or more than the lower limit and equal to or less than the upper limit, the effects of the present invention can be exhibited more effectively.

(flux)
The conductive material includes flux. By using flux, the solder can be more efficiently placed on the electrodes. The above flux is not particularly limited. Flux generally used for soldering or the like can be used as the flux.

Examples of the flux include zinc chloride, mixtures of zinc chloride and inorganic halides, mixtures of zinc chloride and inorganic acids, molten salts, phosphoric acid, amine salts of phosphoric acid, derivatives of phosphoric acid, organic acids, and amine salts of organic acids. , organic halides, hydrazines, amine compounds different from both phosphoric acid amine salts and organic acid amine salts, and rosin. Only one kind of the above flux may be used, or two or more kinds thereof may be used in combination.

Examples of the molten salt include ammonium chloride.

Acid phosphate amine salts etc. are mentioned as said phosphoric acid amine salt. Examples of the acid phosphate amine salts include alkyl acid phosphate amine salts, and more specifically, ethyl acid phosphate bis(2-ethylhexylamine salt), butyl acid phosphate bis(2-ethylhexylamine salt), butyl acid Phosphate bis(dimethyldodecylamine), butyl acid phosphate bis(2-ethylexylamine) and the like.

Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid and glutaric acid.

Examples of the organic acid amine salt include benzylamine glutarate and benzylamine adipate.

Examples of the above-mentioned amine compounds different from both amine salts of phosphoric acid and amine salts of organic acids include dicyclohexylamine, benzylamine, benzhydrylamine, imidazole, benzimidazole, phenylimidazole, carboxybenzimidazole, benzotriazole, and carboxybenzotriazole. is mentioned.

Examples of the pine resin include activated pine resin and non-activated pine resin. The pine resin is a rosin containing abietic acid as a main component. Examples of the rosins include abietic acid and acryl-modified rosins.

The flux preferably contains an organic acid, phosphoric acid, organic acid amine salt, or phosphoric acid amine salt. The organic acid is preferably an organic acid having two or more carboxyl groups. The organic acid amine salt is preferably a carboxylic acid amine salt, more preferably an organic acid amine salt having two or more carboxyl groups. The amine phosphate salt is preferably an acid phosphate amine salt, more preferably an alkyl acid phosphate amine salt. By using these preferred fluxes, the effects of the present invention can be exhibited more effectively.

Examples of the organic acid in the organic acid and organic acid amine salt having two or more carboxyl groups include succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, and sebacic acid.

The active temperature (melting point) of the flux is preferably 50° C. or higher, more preferably 70° C. or higher, still more preferably 80° C. or higher, preferably 200° C. or lower, more preferably 190° C. or lower, and even more preferably 160° C. °C or less, more preferably 150°C or less, and even more preferably 140°C or less. When the activation temperature of the flux is equal to or higher than the lower limit and equal to or lower than the upper limit, the flux effect is exhibited more effectively, and the solder can be arranged on the electrode more efficiently.

The melting point of the flux can be determined by differential scanning calorimetry (DSC). Examples of the differential scanning calorimeter (DSC) device include "EXSTAR DSC7020" manufactured by SII.

Also, the boiling point of the flux is preferably 200° C. or lower.

From the viewpoint of arranging the solder on the electrode more efficiently, the melting point of the flux is preferably higher than the reaction initiation temperature of the thermosetting agent, more preferably 5° C. or higher, and 10° C. or higher. Higher is more preferred.

The flux may be dispersed in the conductive material or adhered to the surfaces of the solder particles.

The flux is preferably a flux that releases cations when heated. The use of a flux that releases cations upon heating allows for much more efficient placement of the solder on the electrodes.

Examples of the flux that releases cations upon heating include the thermal cationic initiator (thermal cationic curing agent).

From the viewpoint of more efficiently arranging the solder on the electrodes, and from the viewpoint of more effectively improving the insulation reliability between the electrodes that should not be connected and the conduction reliability between the electrodes that should be connected, the flux is , is preferably a salt of an acid compound and a base compound.

The acid compound is preferably an organic compound having a carboxyl group. Examples of the acid compound include aliphatic carboxylic acids such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, citric acid, malic acid, and cycloaliphatic carboxylic acids. Examples include cyclohexylcarboxylic acid, 1,4-cyclohexyldicarboxylic acid, isophthalic acid which is an aromatic carboxylic acid, terephthalic acid, trimellitic acid, and ethylenediaminetetraacetic acid. From the viewpoints of more efficiently arranging the solder on the electrode, more effectively improving the insulation reliability, and more effectively improving the conduction reliability, the above acid compounds include glutaric acid, cyclohexyl Carboxylic acid or adipic acid is preferred.

The basic compound is preferably an organic compound having an amino group. Examples of the base compound include diethanolamine, triethanolamine, methyldiethanolamine, ethyldiethanolamine, cyclohexylamine, dicyclohexylamine, benzylamine, benzhydrylamine, 2-methylbenzylamine, 3-methylbenzylamine, 4-tert-butylbenzylamine. , N-methylbenzylamine, N-ethylbenzylamine, N-phenylbenzylamine, N-tert-butylbenzylamine, N-isopropylbenzylamine, N,N-dimethylbenzylamine, imidazole compounds, and triazole compounds. . From the viewpoint of more efficiently arranging solder on the electrode, more effectively improving insulation reliability, and more effectively improving conduction reliability, the base compound is benzylamine. is preferred.

The content of the flux in 100% by weight of the conductive material is preferably 5% by weight or more, more preferably 10% by weight or more, and preferably 20% by weight or less, more preferably 15% by weight or less. If the content of the flux is above the lower limit and below the upper limit, it becomes even more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is further effectively removed. can be effectively removed.

(filler)
The conductive material according to the present invention may contain filler. The filler may be an organic filler or an inorganic filler. By including the filler in the conductive material, the solder can be uniformly aggregated on all the electrodes of the substrate.

Preferably, the conductive material does not contain the filler, or contains the filler in an amount of 5% by weight or less. When the above thermosetting compound is used, the smaller the content of the filler, the easier it is for the solder to move onto the electrode.

In 100% by weight of the conductive material, the content of the filler is preferably 0% by weight (not included) or more, preferably 5% by weight or less, more preferably 2% by weight or less, and further preferably 1% by weight or less. is. When the content of the filler is equal to or more than the lower limit and equal to or less than the upper limit, the solder is arranged more uniformly on the electrode.

(other ingredients)
The above-mentioned conductive material may optionally include fillers, extenders, softeners, plasticizers, thixotropic agents, leveling agents, polymerization catalysts, curing catalysts, colorants, antioxidants, heat stabilizers, light stabilizers, , ultraviolet absorbers, lubricants, antistatic agents and flame retardants.

From the viewpoint of suppressing variations in transfer area, it is preferable that the conductive material does not contain a solvent or contains a solvent in an amount of 8% by weight or less. When the conductive material contains the solvent, the content of the solvent in 100% by weight of the conductive material is preferably 8% by weight or less, more preferably 7% by weight or less, and even more preferably 6% by weight or less, It is more preferably 5% by weight or less, even more preferably 3% by weight or less, and particularly preferably 2% by weight or less. Most preferably, the conductive material does not contain the solvent.

Examples of the solvent include diethylene glycol monohexyl ether, propylene glycol monomethyl ether 2-acetate, and 2-octanol.

(Connection structure and method for manufacturing the connection structure)
A connection structure according to the present invention includes a first connection object member having a first electrode on the surface, a second connection object member having a second electrode on the surface, the first connection object member, and a connecting portion connecting the second member to be connected. In the connection structure according to the present invention, the material of the connection portion is the above-described conductive material. In the connection structure according to the present invention, the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.

A method for manufacturing a connected structure according to the present invention uses the above-described conductive material to form a second connection on the surface of a first connection target member having a first electrode on its surface or a second connection having a second electrode on its surface. Transferring the conductive material onto the surface of the target member by pin transfer or dip transfer. In the method for manufacturing a connected structure according to the present invention, the second electrode is attached to the first member to be connected so that the first electrode and the second electrode are opposed to each other through the conductive material. arranging the members to be connected. In the method for manufacturing a connected structure according to the present invention, the first member to be connected and the second member to be connected are connected by heating the conductive material to the melting point of the solder particles or higher. forming a section from the conductive material, and electrically connecting the first electrode and the second electrode by a solder section in the connecting section.

In the connection structure and the method for manufacturing the connection structure according to the present invention, since the specific conductive material is used, the solder portion can be formed satisfactorily between the first electrode and the second electrode. . Also, part of the solder is less likely to be placed in the regions (spaces) where the electrodes are not formed, and the amount of solder placed in the regions where the electrodes are not formed can be considerably reduced. Therefore, reliability of conduction between the first electrode and the second electrode can be improved. Moreover, it is possible to prevent electrical connection between laterally adjacent electrodes, which should not be connected, and improve insulation reliability.

The step of transferring the conductive material by pin transfer and the step of arranging the second member to be connected can be performed, for example, as follows.

A conductive material is applied to the tip surface of the pin. Next, the conductive material adhering to the tip surface of the pin is brought into contact with the surface of the first member to be connected. More specifically, the conductive material adhering to the tip surface of the pin is brought into contact with the first electrode. Thus, the conductive material can be arranged on the surface of the first member to be connected (on the first electrode). Next, a second member to be connected is arranged so that the first electrode and the second electrode face each other with respect to the first member to be connected on which the conductive material is arranged. In this way, a conductive material can be arranged between the first electrode and the second electrode.

The shape of the pins used for pin transfer is not particularly limited, and conventionally known pins can be used. The diameter of the tip surface of the pin is preferably 10 μm or more, more preferably 50 μm or more, preferably 300 μm or less, and more preferably 100 μm or less. When the diameter of the tip surface of the pin is equal to or more than the lower limit and equal to or less than the upper limit, the conductive material can be transferred to a finer portion.

The step of transferring the conductive material by dip transfer and the step of arranging the second member to be connected can be performed, for example, as follows.

The surface of the second member to be connected is immersed (dipped) in the conductive material. More specifically, the surface of the second electrode is immersed in the conductive material. Thus, the conductive material can be arranged on the surface of the second member to be connected (on the first electrode). Next, a second member to be connected in which a conductive material is arranged is arranged so that the first electrode and the second electrode are opposed to the first member to be connected. In this way, a conductive material can be arranged between the first electrode and the second electrode.

In the method for manufacturing a connected structure according to the present invention, pressure is not applied in the step of arranging the second member to be connected and the step of forming the connecting portion, and the second connection is not applied to the conductive material. Preferably, the weight of the target member is added. In the method for manufacturing a connected structure according to the present invention, in the step of arranging the second member to be connected and the step of forming the connecting portion, the conductive material does not have the force of the weight of the second member to be connected. It is preferable not to apply a pressure exceeding . In these cases, it is possible to further improve the uniformity of the amount of solder in the plurality of solder portions. Furthermore, the thickness of the solder portion can be increased more effectively, so that more solder can easily gather between the electrodes, and the solder can be more efficiently arranged on the electrodes (lines). In addition, part of the solder is less likely to be placed in the regions (spaces) where the electrodes are not formed, and the amount of solder placed in the regions where the electrodes are not formed can be further reduced. Therefore, it is possible to further improve the reliability of electrical connection between the electrodes. Moreover, it is possible to further prevent electrical connection between electrodes adjacent in the lateral direction, which should not be connected, and further improve insulation reliability.

The conductive material is then heated above the melting point of the solder particles. Preferably, the conductive material is heated to the curing temperature of the thermosetting component (thermosetting compound) or higher. During this heating, the solder particles existing in the regions where the electrodes are not formed gather between the first electrode and the second electrode (self-aggregation effect). Also, the solder particles melt and bond to each other. Also, the thermosetting component is thermoset. A connecting portion connecting the first member to be connected and the second member to be connected is formed of a conductive material. A connection portion is formed from the conductive material, a solder portion is formed by joining a plurality of solder particles, and a cured product portion is formed by thermosetting the thermosetting component.

In this embodiment, since a specific conductive material is used, the solder particles can be sedimented at a relatively low temperature at which the flow of the conductive material occurs. Solder particles can be placed (on the electrodes). As a result, the solder particles can be arranged more efficiently between the electrodes to be connected, and the reliability of conduction and reliability of insulation can be improved more effectively.

The heating temperature in the step of heating the conductive material to the melting point of the solder particles or higher is preferably 140° C. or higher, more preferably 160° C. or higher, preferably 450° C. or lower, more preferably 300° C. or lower, and even more preferably 250° C. or less, particularly preferably 200° C. or less.

As a heating method in the step of heating the conductive material above the melting point of the solder particles, the entire connection structure is heated above the melting point of the solder particles and above the curing temperature of the thermosetting component using a reflow furnace or an oven. and a method of locally heating only the connection portion of the connection structure.

Tools used in the local heating method include a hot plate, a heat gun that applies hot air, a soldering iron, an infrared heater, and the like.

Also, when locally heating with a hot plate, use a metal with high thermal conductivity just below the connection part, and use a material with low thermal conductivity such as fluororesin for other places that are not desirable to heat. , preferably forming a hot plate top surface.

The thickness of the solder portion between the electrodes is preferably 10 μm or more, more preferably 20 μm or more, and preferably 60 μm or less, more preferably 40 μm or less. The solder-wetting area on the surface of the electrode (the area in contact with solder in 100% of the exposed area of the electrode) is preferably 50% or more, more preferably 70% or more, and preferably 100% or less.

Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional view schematically showing a connected structure obtained using a conductive material according to one embodiment of the present invention.

A connection structure 1 shown in FIG. a part 4; The connecting portion 4 is made of the conductive material described above. In this embodiment, the conductive material includes a thermosetting component, solder particles, and flux. The thermosetting component includes a thermosetting compound and a curing accelerator.

The connection portion 4 has a solder portion 4A in which a plurality of solder particles are gathered and joined together, and a cured product portion 4B in which a thermosetting compound is thermally cured.

The first connection target member 2 has a plurality of first electrodes 2a on its surface (upper surface). The second connection target member 3 has a plurality of second electrodes 3a on its surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected by a solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A. In the connecting portion 4, between the first electrode 2a and the second electrode 3a, no solder particles are present in a region different from the solder portion 4A (hardened material portion 4B portion). In a region different from the solder portion 4A (hardened material portion 4B portion), there are no solder particles separated from the solder portion 4A. If the amount is small, solder particles may be present in a region (hardened material portion 4B portion) different from the solder portion 4A between the first electrode 2a and the second electrode 3a.

As shown in FIG. 1, in the connection structure 1, a plurality of solder particles gather between the first electrode 2a and the second electrode 3a. Wet and spread the surface of the electrode and then solidify to form the solder portion 4A. Therefore, the connection areas between the solder portion 4A and the first electrode 2a and between the solder portion 4A and the second electrode 3a are increased. That is, by using solder particles, the solder portion 4A and the first electrode 2a, as well as the solder portion, are compared with the case where the conductive outer surface is a metal such as nickel, gold or copper. The contact area between 4A and the second electrode 3a is increased. This also increases the conduction reliability and connection reliability in the connection structure 1 . Note that the flux is generally gradually deactivated by heating.

In the connection structure 1 shown in FIG. 1, all of the solder portions 4A are located in the opposing regions between the first and second electrodes 2a and 3a. In addition, in the connection structure 1 shown in FIG. 1, all of the cured material portion 4B is positioned in the opposing regions between the first and second electrodes 2a and 3a. In the connection structure described above, most of the solder portion is located in the region where the first and second electrodes face each other, and part of the solder portion is located in the region where the first and second electrodes face each other. It may protrude laterally from the area in which it is located. The solder portion protruding laterally from the facing regions of the first and second electrodes is part of the solder portion and is not a solder particle separate from the solder portion. In this embodiment, the amount of solder particles separated from the solder portion can be reduced, but the solder particles separated from the solder portion may exist in the cured product portion. In addition, in the connection structure, most of the cured portion is located in the region where the first and second electrodes face each other, and a part of the cured portion is located in the region where the first and second electrodes face each other. It may protrude laterally from the area where it is.

In the connection structure 1, when a portion where the first electrode 2a and the second electrode 3a face each other in the stacking direction of the first electrode 2a, the connection portion 4, and the second electrode 3a, the first It is preferable that the solder portion 4A in the connection portion 4 is arranged in 50% or more of the 100% area of the portion where the electrode 2a and the second electrode 3a face each other. When the solder portion 4A in the connection portion 4 satisfies the preferred aspects described above, the electrical connection reliability can be further enhanced.

When the facing portion of the first electrode and the second electrode is viewed in the stacking direction of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode It is preferable that the solder portion in the connection portion is arranged in 50% or more of 100% of the area of the portion facing the two electrodes. When the facing portion of the first electrode and the second electrode is viewed in the stacking direction of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode More preferably, the solder portion in the connecting portion is arranged in 60% or more of 100% of the area of the portion facing the two electrodes. When the facing portion of the first electrode and the second electrode is viewed in the stacking direction of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode More preferably, the solder portion in the connection portion is arranged in 70% or more of 100% of the area of the portion facing the two electrodes. When the facing portion of the first electrode and the second electrode is viewed in the stacking direction of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode It is particularly preferable that the solder portion in the connection portion is arranged in 80% or more of 100% of the area of the portion facing the two electrodes. When the facing portion of the first electrode and the second electrode is viewed in the stacking direction of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode It is most preferable that the solder portion in the connection portion is arranged in 90% or more of 100% of the area of the portion facing the two electrodes. When the solder portion in the connection portion satisfies the above-mentioned preferred aspects, the reliability of conduction can be further improved.

When a portion of the first electrode and the second electrode facing each other is viewed in a direction orthogonal to the lamination direction of the first electrode, the connecting portion, and the second electrode, the first electrode It is preferable that 60% or more of the solder portion in the connection portion is arranged in the portion where the electrode and the second electrode face each other. When a portion of the first electrode and the second electrode facing each other is viewed in a direction orthogonal to the lamination direction of the first electrode, the connecting portion, and the second electrode, the first electrode More preferably, 70% or more of the solder portion in the connection portion is arranged in the portion where the electrode and the second electrode face each other. When a portion of the first electrode and the second electrode facing each other is viewed in a direction orthogonal to the lamination direction of the first electrode, the connecting portion, and the second electrode, the first electrode More preferably, 90% or more of the solder portion in the connection portion is arranged in the portion where the electrode and the second electrode face each other. When a portion of the first electrode and the second electrode facing each other is viewed in a direction orthogonal to the lamination direction of the first electrode, the connecting portion, and the second electrode, the first electrode It is particularly preferable that 95% or more of the solder portion in the connection portion is arranged in the portion where the electrode and the second electrode face each other. When a portion of the first electrode and the second electrode facing each other is viewed in a direction orthogonal to the lamination direction of the first electrode, the connecting portion, and the second electrode, the first electrode Most preferably, 99% or more of the solder portion in the connecting portion is arranged in the portion where the electrode and the second electrode face each other. When the solder portion in the connection portion satisfies the above-mentioned preferred aspects, the reliability of conduction can be further improved.

The first and second members to be connected are not particularly limited. Specifically, the first and second connection target members include electronic components such as semiconductor chips, semiconductor packages, LED chips, LED packages, capacitors and diodes, resin films, printed boards, flexible printed boards, flexible Examples include electronic components such as circuit boards such as flat cables, rigid flexible boards, glass epoxy boards and glass boards. The first and second members to be connected are preferably electronic components.

At least one of the first member to be connected and the second member to be connected is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. It is preferable that the second member to be connected is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have properties of being highly flexible and relatively lightweight. When a conductive film is used to connect such members to be connected, solder particles tend to be less likely to gather on the electrodes. On the other hand, by using a conductive paste, even if a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible circuit board is used, by efficiently collecting solder particles on the electrodes, the reliability of the conduction between the electrodes can be improved. can fully enhance sexuality. When using a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible circuit board, compared to the case of using other connection target members such as semiconductor chips, the conduction reliability between electrodes is improved by not applying pressure. An improvement effect can be obtained more effectively.

The electrodes provided on the connection object members include metal electrodes such as gold electrodes, nickel electrodes, tin electrodes, aluminum electrodes, copper electrodes, molybdenum electrodes, silver electrodes, SUS electrodes, and tungsten electrodes. When the member to be connected is a flexible printed circuit board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode or a copper electrode. When the member to be connected is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode. When the electrode is an aluminum electrode, it may be an electrode made of only aluminum, or an electrode in which an aluminum layer is laminated on the surface of a metal oxide layer. Examples of materials for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal elements include Sn, Al and Ga.

In the connection structure according to the present invention, it is preferable that the first electrode and the second electrode are arranged in an area array or a peripheral. The effects of the present invention are exhibited more effectively when the first electrode and the second electrode are arranged in an area array or peripheral arrangement. The area array is a structure in which electrodes are arranged in a grid pattern on the surface of the member to be connected where the electrodes are arranged. The peripheral is a structure in which electrodes are arranged on the outer periphery of the member to be connected. In the case of the structure in which the electrodes are arranged in a comb shape, the solder particles should be aggregated along the direction perpendicular to the comb, whereas in the area array or peripheral structure, the entire surface on which the electrodes are arranged It is necessary for the solder particles to aggregate uniformly. Therefore, in the conventional method, the amount of solder tends to be non-uniform, whereas in the method of the present invention, the solder particles can be uniformly aggregated over the entire surface.

EXAMPLES The present invention will be specifically described below with reference to examples and comparative examples. The invention is not limited only to the following examples.

Thermosetting component (thermosetting compound):
Thermosetting compound 1: Phenol novolac type epoxy compound, "DEN431" manufactured by DOW
Thermosetting compound 2: Bisphenol A type epoxy compound, "DER354" manufactured by DOW
Thermosetting compound 3: 1,6 hexanediol diglycidyl ether, "Epolite 1600" manufactured by Kyoeisha Chemical Co., Ltd.
Thermosetting compound 4: Bisphenol F type epoxy compound, "YDF-8170C" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.

Thermosetting component (curing accelerator):
Curing accelerator: boron trifluoride ethylamine, manufactured by Tokyo Kasei Co., Ltd.

Solder particles:
Solder particles 1: SnAgCu solder particles, "SnAg3Cu0.5 Type 5" manufactured by Mitsui Kinzoku Mining Co., Ltd., average particle size 20 µm, maximum particle size 25 µm, melting point 220°C
Solder particles 2: SnBi solder particles, "Sn42Bi58 Type5" manufactured by Mitsui Kinzoku Mining Co., Ltd., average particle size 20 µm, maximum particle size 25 µm, melting point 139°C
Solder particles 3: SnAgCu solder particles, "SnAg3Cu0.5 DS10" manufactured by Mitsui Kinzoku Mining Co., Ltd., average particle size 10 μm, maximum particle size 15 μm, melting point: 220 ° C.
Solder particles 4: SnBi solder particles, "Sn42Bi58 DS10" manufactured by Mitsui Kinzoku Mining Co., Ltd., average particle size 10 µm, maximum particle size 15 µm, melting point 139°C
Solder particles 5: SnBi solder particles, "Sn42Bi58 STC-5" manufactured by Mitsui Kinzoku Mining Co., Ltd., average particle size 5 μm, maximum particle size 9 μm, melting point 139 ° C.
Solder particles 6: SnBi solder particles, “Sn42Bi58 STC-3” manufactured by Mitsui Kinzoku Mining Co., Ltd., average particle size 3 μm, maximum particle size 7 μm, melting point 139 ° C.
Solder particles 7: SnBi solder particles, acid-treated solder particles of "Sn42Bi58 STC-3" manufactured by Mitsui Kinzoku Co., Ltd., average particle size 3 μm, maximum particle size 6 μm, melting point 139 ° C.

The average particle size and maximum particle size of the solder particles were determined by the above method using a laser diffraction particle size distribution analyzer ("LA-920" manufactured by Horiba, Ltd.).

flux:
Flux 1: Ethyl acid phosphate, "JP-502" manufactured by Johoku Chemical Industry Co., Ltd., liquid at 25 ° C. Flux 2: Butyl acid phosphate, "JP-504" manufactured by Johoku Chemical Industry Co., Ltd., liquid at 25 ° C. Flux 3: Benzyl adipate Amine salt, “benzylamine adipate” manufactured by Showa Chemical Industry Co., Ltd., solid at 25° C. Flux 4: butyl acid phosphate bis(2-ethylhexylamine salt), manufactured by Johoku Chemical Industry Co., Ltd., liquid at 25° C. Flux 5: butyl acid Phosphate bis (dimethyldodecylamine), manufactured by Johoku Chemical Industry Co., Ltd., liquid at 25 ° C. Flux 6: Butyl acid phosphate bis (2-ethylexylamine), manufactured by Johoku Chemical Industry Co., Ltd., liquid at 25 ° C. Flux 7: Azelaic acid, Tokyo Kasei Co., Ltd., solid at 25 ° C. Flux 8: dimer acid, Arizona Chemical Co., Ltd. "UNIDYME14", liquid at 25 ° C. Flux 9: rosin-based flux, Arakawa Chemical Co., Ltd. "WHP-002", liquid at 25 ° C. Flux 10 : Rosin-based flux, "PHA-214" manufactured by Arakawa Chemical Industries, waxy at 25°C (mixture of solid and liquid)

Other Ingredients:
Phenolic resin: "MEH-8000H" manufactured by Meiwa Kasei Co., Ltd.
Solvent: diethylene glycol monohexyl ether

(Examples 1 to 20 and Comparative Examples 1 to 5)
Preparation of conductive material (anisotropic conductive paste):
A conductive material (anisotropic conductive paste) was obtained by blending the components shown in Tables 1 to 3 below in the amounts shown in Tables 1 to 3 below.

(evaluation)
(1) Viscosity of Conductive Material Using an E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.), the following viscosities of the obtained conductive material were measured.

Viscosity ηA of the conductive material at 25°C and 5 rpm immediately after thawing the frozen stored conductive material and reaching 25°C
Viscosity ηB of the conductive material at 25°C and 0.5 rpm immediately after thawing the frozen stored conductive material and reaching 25°C
Viscosity ηC of as-fabricated conductive material at 25°C and 5 rpm
Viscosity ηD of as-fabricated conductive material at 25°C and 0.5 rpm

Also, ηB/ηA and ηD/ηC were calculated from the measurement results.

More specifically, ηA and ηB are the viscosities of the conductive materials immediately after the obtained conductive materials are stored frozen at −40° C. for 48 hours, stored at 25° C. and thawed, and immediately after reaching 25° C. was obtained by measuring

[Criteria for ηA and ηC]
A: 20 Pa s or more and 60 Pa s or less B: 10 Pa s or more and less than 20 Pa s C: More than 60 Pa s and less than 80 Pa s D: Less than 10 Pa s E: More than 80 Pa s

[Criteria for ηB/ηA and ηD/ηC]
A: 2.0 or more B: 1.5 or more and less than 2.0 C: less than 1.5

(2) Variation in transfer area A one-point transfer pin (manufactured by Musashi Engineering Co., Ltd.) having a tip surface diameter of 300 µm was brought into contact with the conductive material at a position of 20 µm from the tip, and the conductive material was adhered to the transfer pin. . The transfer pin to which the conductive material was attached was transferred to a slide glass. This transfer operation was performed 5 times, and the transfer area of the 5 transferred conductive materials was measured using "Hirox KH-1300" manufactured by Hirox. When the transfer area of the transferred conductive material is A ₁ to A ₅ and the average value of A ₁ to A ₅ is A _Ave , the variation in the transfer area is determined by whether or not the following relational expression is satisfied. evaluated.

Formula: 0.85≦(A _n /A _Ave )≦1.15

[Determination Criteria for Variation in Transfer Area]
○: All of n = 1 to 5 satisfy the above relational expression ×: At least one of n = 1 to 5 does not satisfy the above relational expression

(3) Solder Cohesiveness Using a metal mask having an opening of 100 μm long×300 μm wide×30 μm thick, a conductive material was applied to a slide glass. The conductive material was heated with a hot plate set at a temperature 20° C. higher than the melting point of the solder particles. The conductive material and solder after heating were observed, and solder cohesiveness was determined according to the following criteria.

[Solder Cohesiveness Judgment Criteria]
〇: The solder in the conductive material forms one ball ×: The solder in the conductive material does not form one ball

The compositions of the conductive materials and the results are shown in Tables 1-3 below.

DESCRIPTION OF SYMBOLS 1... Connection structure 2... 1st connection object member 2a... 1st electrode 3... 2nd connection object member 3a... 2nd electrode 4... Connection part 4A... Solder part 4B... Hardened material part

Claims (8)

A conductive material used for pin transfer or dip transfer,
including a thermosetting component, a plurality of solder particles, and a flux;
The content of the solder particles is 70% by weight or more and 93% by weight or less,
The conductive material that has been frozen and stored is thawed, and the viscosity of the conductive material at 25°C and 5 rpm immediately after reaching 25°C is defined as ηA. When the viscosity of the conductive material at 25° C. and 0.5 rpm is ηB,
ηA is 10 Pa s or more and 80 Pa s or less,
A conductive material in which ηB/ηA is 1.5 or more. The conductive material according to claim 1, wherein ηA is 50 Pa·s or less. 3. The conductive material according to claim 1, wherein the solder particles have an average particle size of 3.0 [mu]m or less, and the solder particles have a maximum particle size of 10 [mu]m or less. The conductive material according to any one of claims 1 to 3, wherein the solder particles have a melting point of 120°C or higher and 400°C or lower. The conductive material according to any one of claims 1 to 4, wherein the flux comprises an organic acid, phosphoric acid, an organic acid amine salt, or a phosphoric acid amine salt. The conductive material according to any one of claims 1 to 5, which is a conductive paste. a first connection target member having a first electrode on its surface;
a second connection target member having a second electrode on its surface;
A connecting portion that connects the first connection target member and the second connection target member,
The material of the connection portion is the conductive material according to any one of claims 1 to 6,
A connection structure, wherein the first electrode and the second electrode are electrically connected by a solder portion in the connection portion. Using the conductive material according to any one of claims 1 to 6, on the surface of the first connection object member having the first electrode on the surface or the second connection object having the second electrode on the surface transferring the conductive material onto the surface of a member by pin transfer or dip transfer;
arranging the second member to be connected with respect to the first member to be connected such that the first electrode and the second electrode are opposed to each other through the conductive material;
By heating the conductive material to a melting point of the solder particles or higher, a connecting portion connecting the first member to be connected and the second member to be connected is formed from the conductive material, and A method of manufacturing a connection structure, comprising the step of electrically connecting the first electrode and the second electrode with a solder portion in the connection portion.

Images