JP7262194B2 - 載置台及び基板処理装置 - Google Patents

載置台及び基板処理装置 Download PDF

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Publication number
JP7262194B2
JP7262194B2 JP2018173679A JP2018173679A JP7262194B2 JP 7262194 B2 JP7262194 B2 JP 7262194B2 JP 2018173679 A JP2018173679 A JP 2018173679A JP 2018173679 A JP2018173679 A JP 2018173679A JP 7262194 B2 JP7262194 B2 JP 7262194B2
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Japan
Prior art keywords
coolant
mounting
mounting table
substrate
heat insulating
Prior art date
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JP2018173679A
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English (en)
Japanese (ja)
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JP2020047707A (ja
JP2020047707A5 (https=
Inventor
真克 柏崎
寿文 石田
良 佐々木
武宏 加藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2018173679A priority Critical patent/JP7262194B2/ja
Priority to TW113106568A priority patent/TW202427603A/zh
Priority to TW108132015A priority patent/TWI835847B/zh
Priority to KR1020217010011A priority patent/KR102747994B1/ko
Priority to CN201980058555.2A priority patent/CN112655076B/zh
Priority to US17/274,294 priority patent/US20210335584A1/en
Priority to PCT/JP2019/035707 priority patent/WO2020059596A1/ja
Publication of JP2020047707A publication Critical patent/JP2020047707A/ja
Publication of JP2020047707A5 publication Critical patent/JP2020047707A5/ja
Priority to JP2023021400A priority patent/JP7531641B2/ja
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Publication of JP7262194B2 publication Critical patent/JP7262194B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018173679A 2018-09-18 2018-09-18 載置台及び基板処理装置 Active JP7262194B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2018173679A JP7262194B2 (ja) 2018-09-18 2018-09-18 載置台及び基板処理装置
TW108132015A TWI835847B (zh) 2018-09-18 2019-09-05 載置台及基板處理裝置
TW113106568A TW202427603A (zh) 2018-09-18 2019-09-05 載置台及基板處理裝置
CN201980058555.2A CN112655076B (zh) 2018-09-18 2019-09-11 载置台和基片处理装置
KR1020217010011A KR102747994B1 (ko) 2018-09-18 2019-09-11 적재대 및 기판 처리 장치
US17/274,294 US20210335584A1 (en) 2018-09-18 2019-09-11 Stage and substrate processing apparatus
PCT/JP2019/035707 WO2020059596A1 (ja) 2018-09-18 2019-09-11 載置台及び基板処理装置
JP2023021400A JP7531641B2 (ja) 2018-09-18 2023-02-15 載置台及び基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018173679A JP7262194B2 (ja) 2018-09-18 2018-09-18 載置台及び基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023021400A Division JP7531641B2 (ja) 2018-09-18 2023-02-15 載置台及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2020047707A JP2020047707A (ja) 2020-03-26
JP2020047707A5 JP2020047707A5 (https=) 2021-07-26
JP7262194B2 true JP7262194B2 (ja) 2023-04-21

Family

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Family Applications (2)

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JP2018173679A Active JP7262194B2 (ja) 2018-09-18 2018-09-18 載置台及び基板処理装置
JP2023021400A Active JP7531641B2 (ja) 2018-09-18 2023-02-15 載置台及び基板処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023021400A Active JP7531641B2 (ja) 2018-09-18 2023-02-15 載置台及び基板処理装置

Country Status (6)

Country Link
US (1) US20210335584A1 (https=)
JP (2) JP7262194B2 (https=)
KR (1) KR102747994B1 (https=)
CN (1) CN112655076B (https=)
TW (2) TW202427603A (https=)
WO (1) WO2020059596A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7519874B2 (ja) * 2020-10-27 2024-07-22 東京エレクトロン株式会社 プラズマ処理装置
JP7507662B2 (ja) * 2020-11-13 2024-06-28 東京エレクトロン株式会社 温度調整装置及び基板処理装置
KR20220149139A (ko) 2021-04-30 2022-11-08 주식회사다스 스위블 시트용 파워 구동모듈

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011205000A (ja) 2010-03-26 2011-10-13 Tokyo Electron Ltd 載置台
JP2013161522A (ja) 2012-02-01 2013-08-19 Ngk Insulators Ltd セラミックヒータ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343854A (ja) 2001-05-16 2002-11-29 Hitachi Ltd 試料載置台及び半導体装置
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
JP4820137B2 (ja) * 2005-09-26 2011-11-24 株式会社日立国際電気 発熱体の保持構造体
CN101395705B (zh) * 2007-02-09 2011-08-10 株式会社日立国际电气 隔热构造体、加热装置、基板处理设备以及半导体器件的制造方法
JP5262878B2 (ja) * 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
KR101499305B1 (ko) * 2010-03-16 2015-03-05 도쿄엘렉트론가부시키가이샤 성막 장치
US20130284372A1 (en) 2012-04-25 2013-10-31 Hamid Tavassoli Esc cooling base for large diameter subsrates
JP6173936B2 (ja) 2013-02-28 2017-08-02 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6296770B2 (ja) 2013-11-29 2018-03-20 日本特殊陶業株式会社 基板載置装置
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
JP5916909B1 (ja) * 2015-02-06 2016-05-11 株式会社日立国際電気 基板処理装置、ガス整流部、半導体装置の製造方法およびプログラム
TWI616976B (zh) * 2015-06-05 2018-03-01 瓦特洛威電子製造公司 高熱傳導晶圓支撐臺座裝置
KR102490594B1 (ko) * 2016-07-18 2023-01-19 세메스 주식회사 기판을 지지하기 위한 척 및 이를 구비하는 프로브 스테이션

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011205000A (ja) 2010-03-26 2011-10-13 Tokyo Electron Ltd 載置台
JP2013161522A (ja) 2012-02-01 2013-08-19 Ngk Insulators Ltd セラミックヒータ

Also Published As

Publication number Publication date
JP2020047707A (ja) 2020-03-26
US20210335584A1 (en) 2021-10-28
CN112655076B (zh) 2024-10-01
CN112655076A (zh) 2021-04-13
JP2023053335A (ja) 2023-04-12
TW202017040A (zh) 2020-05-01
WO2020059596A1 (ja) 2020-03-26
TWI835847B (zh) 2024-03-21
KR102747994B1 (ko) 2024-12-31
JP7531641B2 (ja) 2024-08-09
TW202427603A (zh) 2024-07-01
KR20210056385A (ko) 2021-05-18

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