JP7254462B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP7254462B2 JP7254462B2 JP2018150541A JP2018150541A JP7254462B2 JP 7254462 B2 JP7254462 B2 JP 7254462B2 JP 2018150541 A JP2018150541 A JP 2018150541A JP 2018150541 A JP2018150541 A JP 2018150541A JP 7254462 B2 JP7254462 B2 JP 7254462B2
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- oxide
- insulator
- conductor
- transistor
- oxygen
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| US20170229486A1 (en) | 2016-02-05 | 2017-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
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| US20170229486A1 (en) | 2016-02-05 | 2017-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP2017143255A (ja) | 2016-02-05 | 2017-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
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